CN116093734A - Laser chip aging monitoring device based on double MPDs (MPDs) monitoring - Google Patents
Laser chip aging monitoring device based on double MPDs (MPDs) monitoring Download PDFInfo
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- CN116093734A CN116093734A CN202211730471.9A CN202211730471A CN116093734A CN 116093734 A CN116093734 A CN 116093734A CN 202211730471 A CN202211730471 A CN 202211730471A CN 116093734 A CN116093734 A CN 116093734A
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- 230000032683 aging Effects 0.000 title claims abstract description 24
- 238000012544 monitoring process Methods 0.000 title claims abstract description 18
- 238000012806 monitoring device Methods 0.000 title claims abstract description 17
- 230000008878 coupling Effects 0.000 claims abstract description 43
- 238000010168 coupling process Methods 0.000 claims abstract description 43
- 238000005859 coupling reaction Methods 0.000 claims abstract description 43
- 239000000969 carrier Substances 0.000 claims abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 8
- 238000012360 testing method Methods 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to the field of laser chip detection, in particular to a laser chip aging monitoring device based on double MPD monitoring. The laser chip aging monitoring device comprises a laser chip carrier, an MPD chip carrier, a coupling lens bracket and a base; wherein, the laser chip carrier and the two MPD chip carriers are respectively arranged on the base in parallel; the coupling lens support comprises two support legs; and the MPD chip carrier is loaded with an MPD chip, and the laser chip carrier is loaded with a laser chip to be monitored. Compared with the prior art, the aging monitoring device for the laser chip provided by the invention has the beneficial effects that the aging monitoring of the laser chip is realized rapidly, conveniently and accurately, and the aging function and the testing function are provided for the selected laser chip to be tested.
Description
Technical Field
The invention relates to the field of laser chip detection, in particular to a laser chip aging monitoring device based on double MPD monitoring.
Background
In the development of optical communication products, the laser chips are often selected, and the laser chips of different manufacturers or the laser chips of different models of the same manufacturer need to be verified.
The existing detection device is difficult to consider ageing and monitoring functions on one hand, and on the other hand, the disassembly and assembly of the laser chip are very troublesome, so that the popularization is not facilitated.
Disclosure of Invention
The invention aims to solve the technical problems that aiming at the defects in the prior art, the invention provides a laser chip aging monitoring device based on double MPD monitoring, which solves the problems that on one hand, aging and monitoring functions are difficult to be simultaneously realized, and on the other hand, the disassembly and the assembly of a laser chip are very troublesome and are not beneficial to popularization.
The technical scheme adopted for solving the technical problems is as follows: the laser chip aging monitoring device comprises a laser chip carrier, an MPD chip carrier, a coupling lens bracket and a base; wherein,,
the laser chip carrier and the two MPD chip carriers are respectively arranged on the base in parallel, and the laser chip carrier is arranged between the two MPD chip carriers;
the coupling lens bracket comprises two supporting legs, the two supporting legs are provided with coupling lenses, and the coupling lenses are fixedly arranged on the base and are respectively arranged between the laser chip carrier and the MPD chip carrier;
the MPD chip carrier is loaded with an MPD chip, the laser chip carrier is loaded with a laser chip to be monitored, the laser chip generates laser beams after being electrified and emits the laser beams in the front and back directions respectively, one beam is coupled to one MPD chip through one coupling lens, and the other beam is coupled to the other MPD chip through the other coupling lens.
Among them, the preferred scheme is: the base is provided with a first gold-plated wire and a second gold-plated wire which are used as electric signal lines of the laser chip, and two bonding pads of the laser chip are bound to the first gold-plated wire and the second gold-plated wire through gold wires; or the laser chip carrier is provided with a first conductive layer, one bonding pad of the laser chip is connected with the first conductive layer and is bound to the first gold-plated wire through a gold wire, and the other bonding pad of the laser chip is bound to the second gold-plated wire through the gold wire.
Among them, the preferred scheme is: the MPD chip carrier is fixedly arranged on the base, the fifth gold-plating wire is connected with the third gold-plating wire, and the sixth gold-plating wire is connected with the fourth gold-plating wire.
Among them, the preferred scheme is: when the MPD chip carrier is fixedly arranged on the base, the fifth gold-plated wire and the third gold-plated wire are connected through conductive glue, and the sixth gold-plated wire and the fourth gold-plated wire are connected through conductive glue.
Among them, the preferred scheme is: the MPD chip carrier comprises a first end face fixedly arranged with the base and a second end face for installing the MPD chip, wherein the first end face and the second end face are perpendicular to each other, and the fifth gold-plated wiring and the sixth gold-plated wiring are all arranged along the first end face and the second end face.
Among them, the preferred scheme is: the coupling lens bracket is of a U-shaped structure, the supporting legs are two side edges of the U-shaped structure, mounting hole sites are arranged on the supporting legs, and the coupling lens is mounted in the mounting hole sites or at the hole sites; the receiving end face of the MPD chip, the coupling lens and the emitting port of the laser chip are positioned on the same straight line.
Among them, the preferred scheme is: the direction of the support leg towards the laser chip carrier is provided with a collimating lens, and the coupling lens is arranged in the direction of the support leg towards the MPD chip carrier.
Among them, the preferred scheme is: the light-emitting ratio of the forward light-emitting and the backward light-emitting of the laser chip is X: y; wherein X/Y is greater than 1.
Compared with the prior art, the aging monitoring device for the laser chip provided by the invention has the beneficial effects that the aging monitoring of the laser chip is realized rapidly, conveniently and accurately, and the aging function and the testing function are provided for the selected laser chip to be tested.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a laser chip burn-in monitoring apparatus according to the present invention;
FIG. 2 is a schematic side view of a laser chip burn-in monitoring apparatus of the present invention;
FIG. 3 is a schematic diagram of the structure of a laser chip carrier and a laser chip of the present invention;
FIG. 4 is a schematic diagram of the structure of the MPD chip carrier and MPD chip of the present invention;
FIG. 5 is a schematic view of the structure of a coupling lens holder of the present invention;
fig. 6 is a schematic structural view of the base of the present invention.
Detailed Description
Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present invention provides a preferred embodiment of a laser chip 120 burn-in monitoring apparatus.
The utility model provides a laser chip 120 ageing monitoring device based on two MPD control, laser chip 120 ageing monitoring device includes laser chip carrier 110, MPD chip carrier 210, coupling lens support 300 and base 400; wherein, the laser chip carrier 110 and the two MPD chip carriers 210 are respectively disposed on the base 400 in parallel, and the laser chip carrier 110 is disposed between the two MPD chip carriers 210; the coupling lens bracket 300 comprises two support legs 310, wherein the two support legs 310 are provided with coupling lenses 311, and the coupling lenses 311 are fixedly arranged on the base 400 and respectively arranged between the laser chip carrier 110 and an MPD chip carrier 210; the MPD chip carrier 210 is loaded with an MPD chip 220, the laser chip carrier 110 is loaded with a laser chip 120 to be monitored, the laser chip 120 generates laser beams after being electrified and emits the laser beams in front and back directions respectively, one beam is coupled to one MPD chip 220 through a coupling lens 311, and the other beam is coupled to the other MPD chip 220 through another coupling lens 311.
Specifically, the laser chip 120 to be monitored is firstly mounted on the laser chip carrier 110, and as an ageing monitoring object of the ageing monitoring device of the laser chip 120, an ageing function and a testing function are realized, specifically, the laser chip 120 is subjected to power-up ageing, meanwhile, the laser chip 120 is subjected to testing of various required parameters, parameters emitting laser light are obtained through the MPD chip 220, a performance parameter change condition is obtained, for example, the laser chip 120 is continuously powered up, continuously works for a specific time under a specific current, and some requirements are performed under a specific temperature, and the process is called ageing of the laser chip 120, and through ageing, the performance (such as luminous power, threshold current and other parameters) of the laser chip 120 is changed or cracked. Of course, the burn-in test belongs to a conventional test scheme, and the main improvement point of the invention is to provide a device for monitoring the burn-in of the laser chip 120, which can rapidly, conveniently and accurately monitor the burn-in of the laser chip 120, and provide a burn-in function and a test function for the selected laser chip 120 to be tested.
The base 400 is used as the fixing and electric connection of each functional component, the laser chip carrier 110 and the two MPD chip carriers 210 are respectively arranged on the base 400 in parallel, the laser chip carrier 110 is arranged between the two MPD chip carriers 210, various wiring structures are arranged on the base 400 and are respectively electrically connected with the laser chip 120 on the laser chip carrier 110 to continuously power up the laser chip 120, so that the laser is generated after the laser chip 120 is electrified; on the other hand, the acquisition signal of the MPD chip 220 is continuously acquired, and the MPD chip 220 acquires the laser beam emitted by the laser chip 120, so as to determine the parameter variation of the laser chip 120. The MPD is a monitor photodiode, and after the laser beam of the laser chip 120 is incident on the light receiving end 221 of the MPD, parameters inside the laser, such as optical power, are obtained.
And, in order to facilitate the light path setting and light convergence, i.e., the convergence of the laser beam of the laser chip 120 onto the MPD chip 220, a light path between the laser chip 120 and the MPD chip 220 is established through the coupling lens holder 300. The positions of the two legs 310 of the coupling lens holder 300 are constructed according to the relative position distances of the two MPD chips 220 and the laser chips 120, so that two optical paths are directly set through the coupling lens holder 300, i.e., the two legs 310 of the coupling lens holder 300 are respectively inserted between the laser chips 120 and any one of the MPD chips 220, so that the laser chips 120, the legs 310 and the MPD chips 220 are in a straight line, and preferably, the two MPD chips 220, the two legs 310 and the laser chips 120 are all disposed in a straight line.
The specific working mode is as follows: after the laser chip 120 is mounted on the laser chip carrier 110, other functional modules are also mounted, namely the laser chip carrier 110, the MPD chip carrier 210 and the coupling lens support 300 are all arranged on the base 400, and circuit connection is also completed, the base 400 is connected with an external related detection device and a power supply, so that the laser chip 120 is continuously powered on and parameter data acquired by the MPD chip 220 are detected; and, after the laser chip 120 is powered on, two laser beams are generated, and are respectively emitted outwards from the front and rear laser emission ports of the laser chip 120, one beam is coupled to one MPD chip 220 through a coupling lens 311, and the other beam is coupled to the other MPD chip 220 through the other coupling lens 311, so that the parameter variation condition of the two laser beams is obtained by obtaining the parameter information of the two MPD chips 220.
In one embodiment, the light output ratio of the forward light output and the backward light output of the laser chip 120 is X: y; wherein X/Y is greater than 1. Preferably, the ratio of forward light emission to backward light emission of the laser chip 120 is 7: and 3, forward light is emitted when the light-emitting power is high. This is caused by the characteristics of the laser chip 120, and simultaneously, the characteristics of the laser chip 120 are set by adopting the dual MPD chip 220 of the application, so that dual laser beams can be monitored simultaneously. Furthermore, the photosensitivity of the two MPD chips 220 can be properly adjusted according to the light-emitting ratio, so as to improve the detection accuracy.
As shown in fig. 3 and 6, the present invention provides a preferred embodiment of the base 400 with the first gold-plated trace 410 and the second gold-plated trace 420.
The base 400 is provided with a first gold-plated wire 410 and a second gold-plated wire 420 as electrical signal lines of the laser chip 120, and the electrical connection between the external control circuit and the laser chip 120 is realized through the first gold-plated wire 410 and the second gold-plated wire 420, specifically, two sets of connection schemes are provided.
In the first scheme, two bonding pads of the laser chip 120 are bound to the first gold-plated wire 410 and the second gold-plated wire 420 through gold wires, jin Sibang is defined to indicate that connection between two conductors is realized through wires supported by gold, and the two bonding pads of the laser chip 120 are respectively connected with the corresponding first gold-plated wire 410 and the second gold-plated wire 420 through gold wires, so that the conductivity is improved through gold wire binding, and the connection operation is also facilitated.
In a second scheme, the laser chip carrier 110 is provided with a first conductive layer, one pad of the laser chip 120 is connected with the first conductive layer and is bound to the first gold-plated trace 410 by a gold wire, and the other pad of the laser chip 120 is bound to the second gold-plated trace 420 by a gold wire. Compared with the scheme one, the scheme two takes the laser chip carrier 110 as a conductor, and is connected with one bonding pad 121 of the laser chip 120 by arranging the first conductive layer, so that the binding distance of two gold wires is increased in the actual connection process, and the binding of the gold wires and the placing of the two gold wires are facilitated to generate interference.
As shown in fig. 4 and 6, the present invention provides a preferred embodiment of the third gold-plated trace 430 and the fourth gold-plated trace 440 disposed on the base 400.
The base 400 is provided with a third gold-plated wire 430 and a fourth gold-plated wire 440 serving as acquisition lines of the MPD chip 220, the MPD chip carrier 210 is provided with a fifth gold-plated wire 231 and a sixth gold-plated wire 232, two pads of the MPD chip 220 are bound to the fifth gold-plated wire 231 and the sixth gold-plated wire 232 through the gold wires 10, the MPD chip carrier 210 connects the fifth gold-plated wire 231 with the third gold-plated wire 430 and connects the sixth gold-plated wire 232 with the fourth gold-plated wire 440 when being fixedly arranged on the base 400.
Since the laser chip 120 is continuously replaced to test different laser chips 120, the bonding of gold wires is required to be more proper after the replacement of the laser chip 120, and the MPD chip carrier 210 and the MPD chip 220 are the structures necessary for the testing process, so that the dismounting structure is not necessary, therefore, in the actual use process, the MPD chip carrier 210 can be directly provided with the fifth gold-plated wire 231 and the sixth gold-plated wire 232, two pads of the MPD chip 220 are bonded to the fifth gold-plated wire 231 and the sixth gold-plated wire 232 through the gold wires 10, the MPD chip carrier 210 is directly connected with the third gold-plated wire 430 through the fifth gold-plated wire 231 and is connected with the fourth gold-plated wire 440 through the sixth gold-plated wire 232, so that the MPD chip 220 is connected with the third gold-plated wire 430 and the fourth gold-plated wire 440, and data acquisition is realized.
In one embodiment, when the MPD chip carrier 210 is fixed to the base 400, the fifth gold-plated wire 231 and the third gold-plated wire 430 are connected through conductive glue, and the sixth gold-plated wire 232 and the fourth gold-plated wire 440 are connected through conductive glue, the conductive glue is preferably silver glue, and the bonding is performed in a patch mode, so that the electrical connection performance of the two is improved.
In one embodiment, MPD chip carrier 210 includes a first end surface fixed to base 400 and a second end surface on which MPD chip 220 is mounted, the first end surface and the second end surface being perpendicular, and fifth gold-plated trace 231 and sixth gold-plated trace 232 are disposed along the first end surface and the second end surface. By arranging the fifth gold-plated trace 231 and the sixth gold-plated trace 232 along two perpendicular end faces, the patch mounting can be directly realized when the MPD chip carrier 210 is fixed, and meanwhile, the MPD chip 220 can be vertically placed, so that the laser beam of the laser chip 120 can be accurately incident on the light receiving end face 221 of the MPD chip 220.
As shown in fig. 5, the present invention provides a preferred embodiment of the coupling lens holder 300 with a U-shaped structure.
The coupling lens bracket 300 is of a U-shaped structure, the supporting legs 310 are two side edges of the U-shaped structure, mounting hole sites are arranged on the supporting legs 310, and the coupling lens 311 is mounted in the mounting hole sites or at the hole sites; wherein, the light receiving end surface 221 of the MPD chip 220, the coupling lens 311 and the emission port of the laser chip 120 are on the same straight line. The arrangement of the coupling lens holder 300 facilitates the direct establishment of the overall optical path, and particularly facilitates the disassembly and assembly when the laser chip 120 is replaced.
The legs 310 are provided with collimator lenses 312 in a direction towards the laser chip carrier 110, and the coupling lenses 311 are provided in a direction of the legs 310 towards the MPD chip carrier 210. Specifically, the laser beam sent by the laser chip 120 is collimated by the collimating lens 312, coupled by the coupling lens 311, and incident on the MPD chip 220 of the MPD chip carrier 210.
The foregoing description of the preferred embodiments of the present invention is not intended to limit the scope of the invention, but rather is intended to cover all modifications and variations within the scope of the present invention as defined in the appended claims.
Claims (8)
1. The laser chip aging monitoring device based on double MPD monitoring is characterized by comprising a laser chip carrier, an MPD chip carrier, a coupling lens bracket and a base; wherein,,
the laser chip carrier and the two MPD chip carriers are respectively arranged on the base in parallel, and the laser chip carrier is arranged between the two MPD chip carriers;
the coupling lens support comprises two support legs, the two support legs are provided with coupling lenses, and the coupling lenses are fixedly arranged on the base and are respectively arranged between the laser chip carrier and the MPD chip carrier;
the MPD chip carrier is loaded with an MPD chip, the laser chip carrier is loaded with a laser chip to be monitored, the laser chip generates laser beams after being electrified and emits the laser beams in the front and back directions respectively, one of the laser beams is coupled to one MPD chip through one coupling lens, and the other laser beam is coupled to the other MPD chip through the other coupling lens.
2. The laser chip burn-in monitoring device of claim 1, wherein: the base is provided with a first gold-plated wire and a second gold-plated wire which are used as electric signal lines of the laser chip, and two bonding pads of the laser chip are bound to the first gold-plated wire and the second gold-plated wire through gold wires; or the laser chip carrier is provided with a first conductive layer, one bonding pad of the laser chip is connected with the first conductive layer and is bound to the first gold-plated wire through a gold wire, and the other bonding pad of the laser chip is bound to the second gold-plated wire through a gold wire.
3. The laser chip burn-in monitoring device of claim 1, wherein: the MPD chip carrier is characterized in that a third gold-plating wire and a fourth gold-plating wire serving as MPD chip acquisition wires are arranged on the base, a fifth gold-plating wire and a sixth gold-plating wire are arranged on the MPD chip carrier, two bonding pads of the MPD chip are bound to the fifth gold-plating wire and the sixth gold-plating wire through gold wires, the fifth gold-plating wire is connected with the third gold-plating wire when the MPD chip carrier is fixedly arranged on the base, and the sixth gold-plating wire is connected with the fourth gold-plating wire.
4. A laser chip burn-in monitoring apparatus as defined in claim 3 wherein: when the MPD chip carrier is fixedly arranged on the base, the fifth gold-plated wire and the third gold-plated wire are connected through conductive glue, and the sixth gold-plated wire and the fourth gold-plated wire are connected through conductive glue.
5. The laser chip burn-in monitoring apparatus according to claim 3 or 4, wherein: the MPD chip carrier comprises a first end face and a second end face, wherein the first end face is fixedly arranged on a base, the second end face is used for installing an MPD chip, the first end face and the second end face are perpendicular to each other, and the fifth gold-plated wiring and the sixth gold-plated wiring are all arranged along the first end face and the second end face.
6. The laser chip burn-in monitoring device of claim 1, wherein: the coupling lens bracket is of a U-shaped structure, the supporting legs are two side edges of the U-shaped structure, mounting hole sites are arranged on the supporting legs, and the coupling lens is mounted in the mounting hole sites or at the hole sites; the receiving end face of the MPD chip, the coupling lens and the emission port of the laser chip are positioned on the same straight line.
7. The laser chip burn-in monitoring apparatus according to claim 1 or 6, wherein: the support leg is provided with a collimating lens towards the direction of the laser chip carrier, and the coupling lens is arranged in the direction of the support leg towards the MPD chip carrier.
8. The laser chip burn-in monitoring device of claim 1, wherein: the light-emitting ratio of the forward light-emitting and the backward light-emitting of the laser chip is X: y; wherein X/Y is greater than 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211730471.9A CN116093734A (en) | 2022-12-30 | 2022-12-30 | Laser chip aging monitoring device based on double MPDs (MPDs) monitoring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211730471.9A CN116093734A (en) | 2022-12-30 | 2022-12-30 | Laser chip aging monitoring device based on double MPDs (MPDs) monitoring |
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| Publication Number | Publication Date |
|---|---|
| CN116093734A true CN116093734A (en) | 2023-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211730471.9A Pending CN116093734A (en) | 2022-12-30 | 2022-12-30 | Laser chip aging monitoring device based on double MPDs (MPDs) monitoring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116093734A (en) |
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- 2022-12-30 CN CN202211730471.9A patent/CN116093734A/en active Pending
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