CN116093239A - Mini/Micro-LED chip capable of preventing crosstalk at large visual angle - Google Patents
Mini/Micro-LED chip capable of preventing crosstalk at large visual angle Download PDFInfo
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- 230000000007 visual effect Effects 0.000 title abstract description 5
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- 238000009826 distribution Methods 0.000 claims abstract description 51
- 239000002105 nanoparticle Substances 0.000 claims description 60
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- 239000007787 solid Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
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- 230000004075 alteration Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 244000141359 Malus pumila Species 0.000 description 1
- 235000021016 apples Nutrition 0.000 description 1
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- 238000004364 calculation method Methods 0.000 description 1
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- 230000000295 complement effect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
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Abstract
The invention relates to the technical field of LED display, in particular to a large-visual-angle crosstalk-preventing Mini/Micro-LED chip, which comprises a Mini/Micro-LED chip, a bottom reflecting structure and a peripheral reflecting structure, wherein the bottom reflecting structure is positioned at the bottom end of the Mini/Micro-LED chip, and the peripheral reflecting structure encloses the Mini/Micro-LED chip but is not connected with the Mini/Micro-LED chip; the upper surface of the bottom reflecting structure is provided with a reflecting layer, the surrounding reflecting structure comprises a plurality of inner surfaces which are connected end to end in sequence, and the included angle between each inner surface and the upper surface of the bottom reflecting structure is more than or equal to 90 degrees and less than 180 degrees. Compared with the prior art, the bottom reflecting plate can improve the light intensity, the surrounding reflecting plates can prevent light crosstalk, and the reflecting layers with slopes can scatter light to various angles, so that a screen manufactured based on the Mini/Micro-LED chip has a larger visual angle, and the light crosstalk problem is avoided. The invention is simple and reliable, can adjust far-field light distribution and light crosstalk, and has a great application market.
Description
Technical Field
The invention relates to the technical field of LED display, in particular to a Mini/Micro-LED chip capable of preventing crosstalk in a large visual angle.
Background
At present, if the common LED chip is used for high-density ultra-small-space display, the phenomenon of light leakage crosstalk of adjacent pixels or sub-pixels, such as an IPAD screen published by apples, is brought. In order to solve the optical crosstalk, a common solution is the surrounding dam technology: surrounding the LED chips like a dam so as to isolate adjacent LED chips from each other. This, while solving the optical crosstalk, creates a new problem: on the one hand, the dam is made of black materials for absorbing light, so that a part of light can be absorbed, light intensity is reduced, and efficiency is reduced. On the other hand, in the prior art of the dam for solving the crosstalk problem, the optical crosstalk problem is mainly adjusted by structural means such as perimeter adjustment of the dam and height of the dam, because the area of the display screen is very large, in order to reduce manufacturing cost, the manufacturing of the dam does not adopt a precise semiconductor process, the precision is very poor, the adjusting precision is not very good, especially when the angle is small, a plurality of display screens have the phenomenon of chromatic aberration (some dams are high and some dams are low, so that lights emitted along the same height have places, some places do not have chromatic aberration), and bad experience is brought to display. Therefore, the existing technology for solving the optical crosstalk has the defects of poor precision, light waste, simple adjusting means and limited adjusting function, and can not well realize far-field light distribution adjustment.
Meanwhile, the light intensity distribution of the LED chip meets the lambertian distribution, the light distribution at the middle angle is strongest, and the light intensity is reduced along with the increase of the angle. When the display is used as display, as the observation angle increases, the brightness of the display is reduced, so when the display is positioned at the forefront of the television, the intensity is highest, and the television is brightest at the moment; sitting at a place deviated from the television, the intensity becomes small and the television becomes dark; at the very edge, little tv content is seen. In order to bring better visual experience, the uniform light distribution and the view field angle of the LED chip are improved, and lenses are usually added on the LED chip in the prior art. However, this solution still has drawbacks: the lens loses a part of light, the light intensity is reduced, and the efficiency is reduced; the lens has large volume and thick thickness, and can not be ultrathin when used for display; the price of the lens is high, the lens needs to be in one-to-one correspondence with the LEDs, and transfer installation is difficult.
In addition, the refractive index of the P-type material and the N-type material of the current LED chip is about 2.4 and is much larger than the refractive index 1 of air, the light emergent cone of the light emitted by the LED quantum well is smaller, the light is reflected at the interface between the LED and the air more strongly, the light transmission is weaker, and if the light emergent efficiency of the LED chip is not improved, the LED has the difficult problems of low light emergent efficiency and larger light loss.
In addition, many displays are not square and many times rectangular, so far field light distribution of LED chips for display is required to be equal and different from each other in the horizontal and vertical directions, but the chips used in the current LED display screens have almost no products perfectly meeting the requirement.
Disclosure of Invention
In order to improve the uniform distribution of light of a Mini/Micro-LED chip and prevent the crosstalk of the light, the invention provides a large-visual-angle crosstalk-preventing Mini/Micro-LED chip, which adopts the following technical scheme:
the large-visual-angle crosstalk-preventing Mini/Micro-LED chip comprises a Mini/Micro-LED chip, and also comprises a bottom reflecting structure and a peripheral reflecting structure, wherein the bottom reflecting structure is positioned at the bottom end of the Mini/Micro-LED chip, and the peripheral reflecting structure surrounds the Mini/Micro-LED chip for a circle but is not connected with the Mini/Micro-LED chip; the four-side reflecting structure comprises a plurality of inner surfaces which are connected end to end in sequence, and the included angle between each inner surface and the upper surface of the bottom reflecting structure is more than or equal to 90 degrees and less than 180 degrees.
Further, the bottom reflection structure is a metal reflecting film or/and a photonic crystal or/and a Bragg reflector; the peripheral reflecting structure comprises a supporting body and a metal reflecting film, or comprises the supporting body and a Bragg reflector, or comprises a photonic crystal.
Further, a transparent insulating material with a specific refractive index is filled between the peripheral reflecting structure and the Mini/Micro-LED chip to improve light emitting efficiency or a transparent insulating material filled with Micro and/or nano particles to generate scattering, the specific refractive index is that the specific refractive index of the filled transparent insulating material is larger than that of air and smaller than that of P-type and N-type semiconductors of the LED chip, the refractive index of the Micro nano particles is different from that of the transparent insulating material, the refractive index of the Micro nano particles is about that of the transparent insulating material, and the size of the Micro nano particles is larger than or equal to or smaller than that of light emitting wavelengths of the LEDs. The specific refractive index of the filled transparent insulating material is larger than that of air and smaller than that of the P-type semiconductor and the N-type semiconductor of the LED chip, the total reflection and interface reflection of light rays can be reduced, and the light emitting efficiency of the LED is improved, because according to a formula of total reflection angle, when the difference of the two refractive indexes is smaller, the total reflection angle of light at the two interfaces can be smaller, the light emitting cone can be increased, more emergent light can be increased, and according to the law of reflection of light, when the difference of the refractive indexes of the two materials is smaller, the reflecting part of light at the interface of the two materials is smaller and the transmitting part of light is larger.
Further, the Mini/Micro-LED chip is 1 single-color chip or 3 RGB three-color chips or 4 RGBW four-color chips.
Further, the included angles between the inner surfaces of the four-side reflecting structures and the upper surface of the bottom reflecting structure are all equal or equal in pairs or equal in opposite angles or unequal to each other.
Further, the uppermost layer of the Mini/Micro-LED chip is also provided with a uniform light adjusting layer as a light emitting layer.
Further, the reflective layer on the upper surface of the bottom reflective structure doubles as the conductive layer of the Mini/Micro-LED chip.
Further, the Mini/Micro-LED chip at least comprises a P-type semiconductor, an N-type semiconductor and a quantum well structure.
Further, the Mini/Micro-LED far field light distribution is adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip, and/or by adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure, and/or by adjusting the height of the peripheral reflective structure of the Mini/Micro-LED chip, and/or by adjusting the reflectivity and reflective area of the bottom reflective structure, and/or by adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the Mini/Micro-LED chip, or/and adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
Further, crosstalk between adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels sub-pixels is improved by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip, and/or by adjusting the angle between each inner surface and the upper surface of the bottom reflective structure, and/or by adjusting the height of the peripheral reflective structure of the Mini/Micro-LED chip, and/or by adjusting the reflectivity and reflective area of the bottom reflective structure, and/or by adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the Mini/Micro-LED chip, or/and adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
Further, the bottom reflecting structure is connected with the electrode, and the surrounding reflecting structure is insulated from the bottom reflecting structure; the bottom reflective structure has a ring of insulation around the Mini/Micro-LED chip.
The invention avoids the theory corresponding to the technical means of the optical crosstalk or far-field light distribution, and the technical effects obtained by the invention are as follows:
by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip, the adjusting principle is that the light in different solid angles emitted by the side face of the LED chip is reflected to the front face after the distance is changed by the reflecting principle of a specific solid angle, the light emitting direction of the light is changed, so that a part of light emitting area can be overlapped with the light emitted from the front face, the light emitting angle, illumination uniformity and light intensity of far-field light distribution are changed, and the far-field light distribution can be adjusted, and light crosstalk can be avoided.
Through the technical means of adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure, the adjusting principle is that the light in the specific solid angle emitted by the side surface is reflected to the front surface by the reflecting principle of the specific angle after the angle is changed, the light emitting direction of the part of light can be adjusted and changed in advance according to the design of the requirement through analog calculation, so that the light emitting area of the part of light which is mutually overlapped with the light emitted by the front surface can be designed and optimized, the light emitting angle, the illuminance uniformity and the light intensity of far-field light distribution are changed, the far-field light distribution can be adjusted, and the light crosstalk can be avoided.
By adjusting the height of the reflecting structure around the Mini/Micro-LED chip, the adjusting principle is that the reflecting principle of the specific shape area is adjusted, after the height is changed, the light in different solid angles emitted by the side face of the LED chip is reflected to the front face, the light emitting direction of the light in different solid angles can be adjusted and changed according to the design requirement, so that a part of light emitting area can be mutually overlapped with the light emitted from the front face, the light emitting angle, the illuminance uniformity and the light intensity of far-field light distribution are changed, the far-field light distribution can be adjusted, and the light crosstalk can be avoided; by adjusting the reflectivity and the reflecting area of the bottom reflecting structure, the adjusting principle is that the reflecting and absorbing principle of a specific shape area is adopted, after the reflectivity and the reflecting area are changed, the light emitted from the side face of the LED chip into different solid angles of the ground is reflected to the front face, so that the intensity and uniformity of the reflected different solid angles can be changed, the far-field light distribution can be adjusted, and the light crosstalk can be avoided.
The technical means of adjusting parameters of Micro and/or nano particles filled between a peripheral reflecting structure and a Mini/Micro-LED chip is that the adjustment principle is based on the principle of refraction and scattering of a specific structure, after the parameters of the filled Micro and/or nano particles are changed, the side of the LED chip emits light which passes through different solid angles in the filling space to scatter to the front, so that the intensity and uniformity of the reflected different solid angles can be changed, light crosstalk can be avoided, the scattering refers to Mie scattering and Rayleigh scattering, when the size of the Micro-nano particles is smaller than the size of 5 times of the light wavelength of the LED and smaller than the size of the light wavelength of the LED, the size of the Micro-nano particles is equal to or smaller than the size of 5 times of the light wavelength of the LED and larger than the size of the light wavelength of the LED, and the conversion between the Rayleigh scattering and the Mie scattering can be realized by adjusting the size of the nano particles.
The technical means for adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer is that the total reflection of light emitted from the front surface is avoided by designing the light emitting angle of the light emitting interface to be large, and the light distribution of front surface light emitting and side surface light emitting can be controlled by controlling the light emitting angle, so that far-field light distribution can be adjusted, and light crosstalk is adjusted. [0021] Compared with the prior art, the bottom reflecting structure can improve light intensity, the surrounding reflecting structure can prevent light crosstalk, and light can be scattered to various angles through the reflecting layer with inclination, so that a screen based on the Mini/Micro-LED chip has a larger viewing angle, far-field light distribution of the Mini/Micro-LED chip realizing different parameters is regulated, and the light crosstalk problem of the Mini/Micro-LED chip is regulated.
The invention is simple and reliable, can adjust the far-field light distribution and the light crosstalk of the Mini/Micro-LED chip through a semiconductor process, can realize the effect that the Mini/Micro-LED chip replaces the current LED+lens, can save the lens, save the material, reduce the weight and reduce the distance used for display, can be used as an ultrathin display, reduce the cost, improve the light efficiency, and the manufacturing process is compatible with the current precise semiconductor process, can precisely realize the precise adjustment of the far-field light distribution and the light crosstalk of the Mini/Micro-LED, and has a great application market.
Drawings
Fig. 1 is a schematic structural view of embodiment 1 of the present invention.
Fig. 2 is a schematic structural view of embodiment 2 of the present invention.
Fig. 3 is a cross-sectional view of fig. 1.
In the figure: 1-Mini/Micro-LED chip; 2-a bottom reflective structure; 3-a four-sided reflective structure; 4-a uniform light conditioning layer; 5-electrode; 6-a transparent insulating material; 7-micro and/or nano particles; 8-insulator.
Detailed Description
In order to better understand the purpose and function of the invention, the chip structure of the adjustable Mini/Micro-LED large-angle far-field light distribution and leakage-proof crosstalk is further described in detail below with reference to the accompanying drawings.
Embodiment 1, a Mini/Micro-LED chip with large viewing angle and crosstalk prevention as shown in fig. 1, comprising a Mini/Micro-LED chip 1, a bottom reflecting structure 2 and a peripheral reflecting structure 3, wherein the bottom reflecting structure 2 is positioned at the bottom end of the Mini/Micro-LED chip 1, and the peripheral reflecting structure 3 surrounds the Mini/Micro-LED chip 1 for a week but is not connected with the Mini/Micro-LED chip 1; the upper surface of the bottom reflecting structure 2 is provided with a reflecting layer, the surrounding reflecting structure 3 comprises a plurality of inner surfaces which are connected end to end in sequence, and the included angle between each inner surface and the upper surface of the bottom reflecting structure 2 is 100 degrees. In fig. 1 it is shown that the surrounding reflective structure 3 comprises 4 inner surfaces which are in turn end to end.
The bottom reflecting structure 2 and the peripheral reflecting structure 3 in this embodiment include a substrate and a metal coating film laid on the surface of the substrate, and the metal coating film forms a reflecting layer. In another preferred embodiment, a photonic crystal with a three-dimensional structure is used instead of a metal coating film, which will have a broader range of reflection effects. Or a Bragg reflector with a plurality of reflecting layers is used for replacing the metal coating, so that the reflecting effect of a wider range is achieved.
In this embodiment, the Mini/Micro-LED chip 1 is 1 single-color chip, in another preferred embodiment, the Mini/Micro-LED chip is 3 RGB (red green blue) three-color chips, and in another preferred embodiment, the Mini/Micro-LED chip is 4 RGBW (red green blue white) four-color chips.
In this embodiment, the angles between the 4 inner surfaces of the peripheral reflective structure 3 and the upper surface of the bottom reflective structure 2 are equal. In another preferred embodiment, the inner surfaces are inclined at equal angles to the upper surface of the bottom reflecting structure 2, diagonally equal or not. When the included angles are all equal, the emergent far-field light is distributed uniformly in all directions; when the included angles are equal in pairs, the light distribution of each angle in the far field is equal in pairs; when the opposite angles are equal, the opposite angles of the far field are also equal, and when the chip is quadrilateral, the angles in the horizontal direction and the vertical direction are different and the opposite angles are equal, so that the requirement of the rectangular display screen on far field light distribution of the chip is met; in the case of complementary equality, the angles of their far-field light distribution are also unequal. Therefore, the angle uniformity of far-field light distribution can be regulated and controlled by regulating and controlling the angle of the included angle.
In this embodiment, the uppermost layer of the Mini/Micro-LED chip 1 is further provided with a uniform light modulation layer 4 as a light extraction layer. In another preferred embodiment there is no such arrangement.
In this embodiment, the Mini/Micro-LED chip 1 includes at least a P-type semiconductor, an N-type semiconductor and a quantum well structure.
In another preferred embodiment, the bottom reflecting structure 2 is connected to the electrode 5, and the surrounding reflecting structures 3 are insulated from the bottom reflecting structure 2; the bottom reflective structure 2 has a ring of insulation 8 around the Mini/Micro-LED chip 1. The P-type electrode and the N-type electrode of the chip are insulated.
In another preferred embodiment, the reflective layer on the upper surface of the bottom reflective structure 2 doubles as the conductive layer of the Mini/Micro-LED chip 1. This minimizes the loss of two refractions by only one reflection.
In this embodiment, the far-field light distribution of the Mini/Micro-LED chip 1 is adjusted by adjusting the distance between the peripheral reflective structure 3 and the Mini/Micro-LED chip 1.
In another preferred embodiment, the Mini/Micro-LED chip 1 far field light distribution is adjusted by adjusting the angle of each inner surface to the upper surface of the bottom reflective structure 2.
In another preferred embodiment, the far field light distribution of the Mini/Micro-LED chip 1 is adjusted by adjusting the height of the Mini/Micro-LED chip 1 itself.
When the distance between the peripheral reflective structure 3 and the Mini/Micro-LED chip 1 is adjusted to be fixed and the included angle between each inner surface of the peripheral reflective structure 3 and the upper surface of the bottom reflective structure 2 is small, the intensity of the middle part of far-field light distribution is reduced. Since the light rays emitted from the periphery are absorbed, the light rays cannot be incident to the side wall and cannot be reflected to the middle angle. Therefore, transparent insulating materials 6 with specific refractive indexes are filled between the peripheral reflecting structures 3 and the Mini/Micro-LED chips 1 to improve light extraction efficiency.
In another preferred embodiment, transparent insulating material 6 of micro-and/or nano-particles 7 is filled to produce scattering. The specific refractive index of the filled transparent insulating material is larger than that of air and smaller than that of the P-type semiconductor and the N-type semiconductor of the LED chip, the total reflection and interface reflection of light rays can be reduced, and the light emitting efficiency of the LED is improved, because according to a formula of total reflection angle, when the difference of the two refractive indexes is smaller, the total reflection angle of light at the two interfaces can be smaller, the light emitting cone can be increased, more emergent light can be increased, and according to the law of reflection of light, when the difference of the refractive indexes of the two materials is smaller, the reflecting part of light at the interface of the two materials is smaller and the transmitting part of light is larger.
To sum up, adjusting Mini/Micro-LED far field light distribution includes, but is not limited to, the following 6 ways:
(1) by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip
(2) Height of reflecting structure around Mini/Micro-LED chip
(3) Adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure
(4) Adjusting reflectivity and reflective area of bottom reflective structure
(5) Adjusting parameters of micro-and/or nano-particles filled between a surrounding reflective structure and a chip
(6) Refractive index and thickness optical parameters of uniform light regulating layer for regulating light emergent layer
In adjusting the far-field light distribution, the far-field light distribution of the Mini/Micro-LED chip 1 can also be adjusted by any number of combinations of the above techniques for adjusting the far-field light distribution of the Mini/Micro-LED chip 1. As shown in fig. 3, a part of light emitted by the Mini/Micro-LED chip 1 can directly pass through the filled transparent insulating material 6 with a specific refractive index and then pass out, and a larger far-field light distribution is obtained due to the refraction effect of the transparent insulating material 6 with the specific refractive index; a part of light is reflected by the bottom reflecting structure 2, reflected by the surrounding reflecting structures 3, scattered by micro and/or nano particles 7 filled in the transparent insulating material 6, and penetrated out after being refracted by the transparent insulating material 6 with a specific refractive index, so that larger far-field light distribution is obtained; a part of light rays firstly pass through the filled micro-and/or nano-particles 7 after being scattered and scattered, a part of light rays pass through the transparent insulating material 6 with a specific refractive index after being refracted, and the other part of light rays pass through the bottom reflecting structure 2 after being reflected and pass through the transparent insulating material 6 with a specific refractive index after being refracted, so that larger far-field light distribution is obtained. It should be emphasized that the combination of two or more technical means, rather than the simple superposition of two or more technical means, has already been said to be the principle of the single technology functioning, and since the principle of each technology adjustment is different, the means of adjustment of each adjustment technology is different, and the adjusting content, including the adjusting light emitting angle, the light emitting solid angle, the light intensity, the light emitting direction, the light emitting area, the light emitting uniformity, etc., are different, so that when the different technologies are cooperatively adjusted, the effects of mutual complementation or mutual superposition or mutual multiplication can be achieved. When multiple technologies are regulated together, the effects which cannot be achieved by a single regulation technology, such as one refraction and one reflection, one reflection and one scattering, are achieved, which is equivalent to the fact that the paths of light rays are more and more complex, more and more dispersed and more uniform, the intensity, uniformity and range of the light rays are larger, and the simple superposition of the light rays is not achieved.
For example, two combinations of the above techniques, there are 15 ways:
(1) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chips by adjusting the distance between the peripheral reflective structures and the Mini/Micro-LED chips + (2).
(1) adjusting the included angle of each inner surface with the upper surface of the bottom reflective structure by adjusting the distance + (3) between the peripheral reflective structure and the Mini/Micro-LED chip.
(1) the reflectivity and reflective area of the bottom reflective structure is adjusted by adjusting the distance between the surrounding reflective structure and the Mini/Micro-LED chip + (4).
(1) parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip are adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (5).
(1) the refractive index and thickness optical parameters of the uniform light regulating layer of the light emitting layer are regulated by regulating the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (6).
(2) adjusting the height of the reflective structures around the Mini/Micro-LED chip+ (3) adjusting the angle between each inner surface and the upper surface of the bottom reflective structure.
(2) adjusting the height of the reflective structure around the Mini/Micro-LED chip+ (4) adjusting the reflectivity and reflective area of the bottom reflective structure.
(2) adjusting the height of the reflective structures around the Mini/Micro-LED chip + (5) adjusting the parameters of Micro and/or nano particles filled between the reflective structures around and the chip.
(2) adjusting the height of the reflecting structure around the Mini/Micro-LED chip+ (6) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
(3) adjusting the angle of each inner surface to the upper surface of the bottom reflective structure + (4) adjusting the reflectivity and reflective area of the bottom reflective structure.
(3) adjusting the angle of each inner surface to the upper surface of the bottom reflective structure + (5) adjusting the parameters of micro-and/or nano-particles filled between the surrounding reflective structure and the chip.
(3) adjusting the angle of each inner surface to the upper surface of the bottom reflective structure + (6) adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
(4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting parameters of micro-and/or nano-particles filled between the surrounding reflective structure and the chip.
(4) adjusting the reflectivity and reflective area of the bottom reflective structure + (6) adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
(5) adjusting parameters of micro-and/or nano-particles filled between the surrounding reflective structure and the chip + (6) adjusting refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
For example, three combinations of the above techniques, there are 20 ways:
(1) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chip by adjusting the distance between the peripheral reflective structures and the Mini/Micro-LED chip + (2) and adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure.
(1) the reflectivity and the reflective area of the bottom reflective structure are adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (2) adjusting the height of the peripheral reflective structure of the Mini/Micro-LED chip + (4).
(1) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chip by adjusting the distance between the peripheral reflective structures and the Mini/Micro-LED chip + (2) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip.
And (1) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip (2) and adjusting the height of the peripheral reflecting structure of the Mini/Micro-LED chip (6).
(1) the reflectivity and reflective area of the bottom reflective structure is adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (3) adjusting the angle between each inner surface and the upper surface of the bottom reflective structure + (4).
(1) parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip are adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure + (5).
And (1) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emergent layer by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip (3) and adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure (6).
(1) adjusting the reflectivity and reflective area of the bottom reflective structure by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (4) and adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip + (5).
(1) the refractive index and thickness optical parameters of the uniform light regulating layer of the light emergent layer are regulated by regulating the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (4) regulating the reflectivity and reflecting area of the bottom reflecting structure + (6).
(1) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflecting structure and the chip + (6).
(2) adjusting the height of the reflective structures around the Mini/Micro-LED chip+ (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure+ (4) adjusting the reflectivity and reflective area of the bottom reflective structure.
(2) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chip + (3) adjusting the angle between each inner surface and the upper surface of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip.
And (2) adjusting the height of the reflecting structures around the Mini/Micro-LED chip+ (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure+ (6) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emergent layer.
(2) adjusting the height of the reflective structures around the Mini/Micro-LED chip + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the reflective structures around and the chip.
(2) adjusting the height of the reflecting structure around the Mini/Micro-LED chip+ (4) adjusting the reflectivity and the reflecting area of the reflecting structure at the bottom+ (6) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emergent layer.
(2) adjusting the height of the reflective structures around the Mini/Micro-LED chip + (5) adjusting the parameters of Micro and/or nano particles filled between the reflective structures around and the chip + (6) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light exiting layer.
(3) adjusting the angle of each inner surface to the upper surface of the bottom reflective structure + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting parameters of micro-and/or nano-particles filled between the surrounding reflective structure and the chip.
(3) adjusting the angle of each inner surface to the upper surface of the bottom reflective structure + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (6) adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
(3) adjusting the included angle of each inner surface with the upper surface of the bottom reflective structure + (5) adjusting the parameters of micro-and/or nano-particles filled between the surrounding reflective structure and the chip + (6) adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
(4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting the parameters of micro and/or nano particles filled between the surrounding reflective structure and the chip + (6) adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
For example, four combinations of the above techniques, there are 15 ways:
(1) adjusting the height+ (3) of the peripheral reflecting structures of the Mini/Micro-LED chip by adjusting the distance+ (2) between the peripheral reflecting structures and the Mini/Micro-LED chip, and adjusting the included angle+ (4) between each inner surface and the upper surface of the bottom reflecting structure, and adjusting the reflectivity and the reflecting area of the bottom reflecting structure.
(1) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chip by adjusting the distance between the peripheral reflective structures and the Mini/Micro-LED chip + (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip.
(1) adjusting the height+ (3) of the peripheral reflecting structures of the Mini/Micro-LED chip by adjusting the distance+ (2) between the peripheral reflecting structures and the Mini/Micro-LED chip, and adjusting the included angle+ (6) between each inner surface and the upper surface of the bottom reflecting structure, and adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
(1) adjusting the height+ (4) of the peripheral reflective structures of the Mini/Micro-LED chip by adjusting the distance+ (2) between the peripheral reflective structures and the Mini/Micro-LED chip, and (5) adjusting the reflectivity and reflective area+ (5) of the bottom reflective structures, and adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip.
And (1) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emergent layer by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (2) adjusting the height of the peripheral reflecting structure of the Mini/Micro-LED chip + (4) adjusting the reflectivity and reflecting area of the bottom reflecting structure + (6).
(1) adjusting the height of the peripheral reflecting structure of the Mini/Micro-LED chip by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip+ (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflecting structure and the chip+ (6) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
(1) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5).
(1) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emitting layer by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip+ (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure+ (4) adjusting the reflectivity and reflecting area of the bottom reflecting structure+ (6).
(1) the refractive index and thickness optical parameters of the uniform light regulating layer of the light emergent layer are regulated by regulating the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (4) the reflectivity and reflecting area of the bottom reflecting structure + (5) the parameters of Micro and/or nano particles filled between the peripheral reflecting structure and the chip + (6).
(1) adjusting the refractive index and thickness optical parameters of a uniform light adjusting layer of the light emitting layer by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip + (6).
(2) adjusting the height+ (3) of the reflective structures around the Mini/Micro-LED chip, adjusting the angle between each inner surface and the upper surface of the bottom reflective structure+ (4) adjusting the reflectivity and reflective area+ (5) adjusting the parameters of Micro and/or nano particles filled between the reflective structures around and the chip.
And (2) adjusting the height+ (3) of the reflecting structures around the Mini/Micro-LED chip, adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure+ (4) adjusting the reflectivity and the reflecting area+ (6) of the bottom reflecting structure, and adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emergent layer.
(2) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chip+ (3) adjusting the angle between each inner surface and the upper surface of the bottom reflective structure+ (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip+ (6) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
(2) adjusting the height of the reflective structures around the Mini/Micro-LED chip + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the reflective structures around and the chip + (6) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light extraction layer.
(3) adjusting the angle between each inner surface and the upper surface of the bottom reflective structure + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting the parameters of micro-and/or nano-particles filled between the surrounding reflective structure and the chip + (6) adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-exiting layer.
For example, five combinations of the above techniques, there are 6 ways:
(1) adjusting the height+ (3) of the peripheral reflective structures of the Mini/Micro-LED chip by adjusting the distance between the peripheral reflective structures and the Mini/Micro-LED chip+ (4) adjusting the reflectivity and the reflective area+ (5) of the bottom reflective structure by adjusting the included angle of each inner surface and the upper surface of the bottom reflective structure and adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip.
(1) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer by adjusting the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (2) adjusting the height of the peripheral reflecting structure of the Mini/Micro-LED chip + (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure + (4) adjusting the reflectivity and the reflecting area of the bottom reflecting structure + (6).
(1) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emitting layer by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip + (3) adjusting the angle between each inner surface and the upper surface of the bottom reflective structure + (4) adjusting the reflectivity and reflective area of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip + (6).
(2) adjusting the height+ (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflecting structure of the Mini/Micro-LED chip peripheral reflecting structure+ (4) adjusting the reflectivity and reflecting area+ (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflecting structure and the chip+ (6) adjusting the refractive index and thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
(1) adjusting the height+ (4) adjusting the reflectivity and the reflective area+ (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the chip by adjusting the distance+ (2) between the peripheral reflective structure and the Mini/Micro-LED chip and adjusting the refractive index and the thickness optical parameters of a uniform light adjusting layer of the light emitting layer.
(1) adjusting the height of the peripheral reflective structures of the Mini/Micro-LED chip by adjusting the distance between the peripheral reflective structures and the Mini/Micro-LED chip + (3) adjusting the included angle between each inner surface and the upper surface of the bottom reflective structure + (5) adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structures and the chip + (6) adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer.
It is also possible to combine all the above techniques, of course in only 1 way:
(1) the refractive index and thickness optical parameters of the uniform light regulating layer of the light emergent layer are regulated by regulating the distance between the peripheral reflecting structure and the Mini/Micro-LED chip + (2) regulating the height of the peripheral reflecting structure of the Mini/Micro-LED chip + (3) regulating the included angle between each inner surface and the upper surface of the bottom reflecting structure + (4) regulating the reflectivity and reflecting area of the bottom reflecting structure + (5) regulating the parameters of Micro and/or nano particles filled between the peripheral reflecting structure and the chip + (6).
In this embodiment, by adjusting the included angle between each inner surface of the peripheral reflective structure 3 and the upper surface of the bottom reflective structure 2, the light emitting angle of the light reflected by the peripheral reflective structure can be adjusted, so as to avoid crosstalk between adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels.
In another preferred embodiment, by adjusting the height of the peripheral reflective structure 3, the area and luminous flux of the light reflected by the peripheral reflective structure can also be controlled, so as to adjust the luminous flux received in unit area at different positions of the far field, thereby adjusting the light distribution in a specific area outside the chip, and avoiding the crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels.
In another preferred embodiment, the reflectivity and the reflective area of the bottom reflective structure 2 are adjusted, so that the area and the luminous flux of the light reflected by the bottom reflective structure 2 are controlled, so that the luminous flux received per unit area on a specific area outside the chip is adjusted, so that the light distribution on a specific area outside the chip is adjusted, and the crosstalk between adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels is avoided.
In another preferred embodiment, the Mini/Micro-LED far field light distribution is adjusted by adjusting the parameters of Micro and/or nano particles filled between the surrounding reflective structure and the Mini/Micro-LED chip, including the concentration, the size of the Micro and/or nano particles and the proportion of different sized particles, so as to adjust the light distribution on a specific area outside the chip, thereby avoiding crosstalk between adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels.
In another preferred embodiment, the light distribution on a specific area outside the chip is adjusted by adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer to adjust the far-field light distribution of the Mini/Micro-LED, so that crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels is avoided.
The far-field light distribution of the Mini/Micro-LED chip 1 can also be adjusted by any number of combinations of the above techniques for adjusting the far-field light distribution of the Mini/Micro-LED chip 1 while avoiding crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels.
For example, the above techniques may be combined in two ways, 15 total; three combinations of the above techniques, 20 modes in total; four combinations of the above techniques, 15 modes in total, and 6 modes in total for any combination of species of the above techniques; and 1 way of combining all techniques. The combination modes are similar to the combination modes of the technical scheme for adjusting the far-field light distribution of the Mini/Micro-LED chip 1, and as shown in fig. 3, part of light rays emitted by the Mini/Micro-LED chip 1 can directly pass through the filled transparent insulating material 6 with specific refractive index and then pass out, and the light distribution on a specific area outside the chip is adjusted due to the refraction effect of the transparent insulating material 6 with specific refractive index, so that the crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels is avoided; a part of light is reflected by the bottom reflecting structure 2, reflected by the surrounding reflecting structures 3, scattered by Micro and/or nano particles in the filled Micro and/or nano particles transparent insulating material 6, and passes out after being refracted by the transparent insulating material 6 with a specific refractive index, so that the light distribution on a specific area outside a chip is regulated, and the crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels is avoided; a part of light is firstly scattered by Micro-particles and/or nano-particles in the filled Micro-particles and/or nano-particles, a part of scattered light passes through the transparent insulating material 6 with a specific refractive index after being refracted, and the other part of scattered light passes through the bottom reflecting structure 2 after being reflected by the transparent insulating material 6 with a specific refractive index, so that the light distribution on a specific area outside a chip is regulated, and the crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels is avoided. It is therefore emphasized that the combination of two or more technical means, rather than the simple superposition of two or more technical means, has been said to be the principle of the functioning of a single technique, since the principle of adjustment of each technique is different (as above, the principle of reflection at a specific solid angle, the principle of reflection at a specific shape area, the principle of total reflection at a specific area, the principle of refraction, scattering at a specific structure, the principle of reflection and absorption at a specific shape area, the principle of reflection at a specific angle), the means of adjustment of each adjustment technique is different (by adjusting the distance between the surrounding reflective structure and the Mini/Micro-LED chip, and/or by adjusting the angle between each inner surface and the upper surface of the bottom reflective structure, and/or by adjusting the height of the surrounding reflective structure of the Mini/Micro-LED chip, and/or by adjusting the reflectivity and the reflective area of the bottom reflective structure, and/or by adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the Mini/Micro-LED chip, or/and adjusting the refractive index and the thickness optical parameters of the uniform light adjusting layer of the light emitting layer, the obtained adjusting effects (the light emitting angle, the light emitting solid angle, the light intensity, the light emitting direction angle, the light emitting area, the light emitting uniformity) are different, for example, the adjusted light emitting angle, the light emitting solid angle, the light intensity, the light emitting direction, the light emitting area, the light emitting uniformity and the like are different, so that when different technologies are cooperatively adjusted, a new adjusting principle (the reflecting principle of a specific solid angle, the reflecting principle of a specific shape area, the total reflecting principle of a specific area) is formed, the refraction and scattering principles of the specific structure, the reflection and absorption principles of the specific shape area and the reflection principles of the specific angle can be combined in any pair or in any plurality, and the effects of mutual complementation or mutual superposition or mutual multiplication can be achieved. When the following technologies are regulated together, the effect which cannot be achieved by a single regulation technology can be achieved, for example, the light-emitting angle, the light-emitting solid angle, the light intensity, the light-emitting direction angle, the light-emitting area and the light-emitting uniformity are different. And will not be described in detail herein.
Example 2 as shown in fig. 2, otherwise the same as example 1, except that the Mini/Micro-LED chip 1 has 5 sides, and correspondingly the four-sided reflective structure 3 includes 5 inner surfaces connected end to end in sequence.
In another preferred embodiment, the number of inner surfaces is any integer greater than 3, such as 7, 8, etc.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention, and are intended to be included within the scope of the appended claims and description. In particular, the technical features mentioned in the respective embodiments may be combined in any manner as long as there is no structural conflict. The present invention is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions falling within the scope of the claims.
Claims (11)
1. The large-visual-angle crosstalk-preventing Mini/Micro-LED chip comprises a Mini/Micro-LED chip and is characterized by further comprising a bottom reflecting structure and a peripheral reflecting structure, wherein the bottom reflecting structure is positioned at the bottom end of the Mini/Micro-LED chip, and the peripheral reflecting structure surrounds the Mini/Micro-LED chip for a circle but is not connected with the Mini/Micro-LED chip; the four-side reflecting structure comprises a plurality of inner surfaces which are connected end to end in sequence, and the included angle between each inner surface and the upper surface of the bottom reflecting structure is more than or equal to 90 degrees and less than 180 degrees.
2. The large viewing angle crosstalk prevention Mini/Micro-LED chip of claim 1, wherein the bottom reflecting structure is a metal reflecting film or/and a photonic crystal or/and a Bragg reflector; the peripheral reflecting structure comprises a supporting body and a metal reflecting film, or comprises the supporting body and a Bragg reflector, or comprises a photonic crystal.
3. The large viewing angle crosstalk prevention Mini/Micro-LED chip of claim 1, wherein a transparent insulating material with a specific refractive index is filled between the peripheral reflective structure and the Mini/Micro-LED chip to increase light extraction efficiency or a transparent insulating material filled with Micro-and/or nano-particles to generate scattering, wherein the specific refractive index is that the specific refractive index of the filled transparent insulating material is greater than the refractive index of air and less than the refractive index of P-type and N-type semiconductors of the LED chip, the refractive index of the Micro-nano-particles is different from the refractive index of the transparent insulating material, and the refractive index of the Micro-nano-particles is greater than the refractive index of the transparent insulating material, and the size of the Micro-nano-particles is greater than or equal to the size of the light extraction wavelength of the LED.
4. The large viewing angle crosstalk-preventing Mini/Micro-LED chip of claim 1, wherein the Mini/Micro-LED chip is 1 single color chip or 3 RGB three color chips or 4 RGBW four color chips.
5. The large viewing angle crosstalk prevention Mini/Micro-LED chip of claim 1, wherein the angles between the inner surfaces of the peripheral reflective structures and the upper surface of the bottom reflective structure are all equal or equal in pairs or diagonally equal or unequal to each other.
6. A large viewing angle crosstalk-preventing Mini/Micro-LED chip according to claim 1 or 3, characterized in that the uppermost layer of the Mini/Micro-LED chip is further provided with a uniform light-adjusting layer as a light-emitting layer.
7. The large viewing angle crosstalk-preventing Mini/Micro-LED chip of claim 1, wherein the reflective layer on the top surface of the bottom reflective structure doubles as the conductive layer of the Mini/Micro-LED chip.
8. The large viewing angle crosstalk-preventing Mini/Micro-LED chip of claim 1, wherein the Mini/Micro-LED chip comprises at least a P-type semiconductor, an N-type semiconductor and a quantum well structure.
9. The large viewing angle crosstalk-preventing Mini/Micro-LED chip of claim 6, wherein the Mini/Micro-LED far field light distribution is adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip, and/or by adjusting the angle between each inner surface and the upper surface of the bottom reflective structure, and/or by adjusting the height of the peripheral reflective structure of the Mini/Micro-LED chip, and/or by adjusting the reflectivity and reflective area of the bottom reflective structure, and/or by adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the Mini/Micro-LED chip, and/or by adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-emitting layer, or by improving the crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels sub-pixels.
10. The large viewing angle crosstalk-preventing Mini/Micro-LED chip of claim 6, wherein the Mini/Micro-LED far field light distribution is adjusted by adjusting the distance between the peripheral reflective structure and the Mini/Micro-LED chip, and/or by adjusting the angle between each inner surface and the upper surface of the bottom reflective structure, and/or by adjusting the height of the peripheral reflective structure of the Mini/Micro-LED chip, and/or by adjusting the reflectivity and reflective area of the bottom reflective structure, and/or by adjusting the parameters of Micro and/or nano particles filled between the peripheral reflective structure and the Mini/Micro-LED chip, and/or by adjusting the refractive index and thickness optical parameters of the uniform light-adjusting layer of the light-emitting layer, or by improving the crosstalk of adjacent Mini/Micro-LED pixels or adjacent Mini/Micro-LED pixels sub-pixels.
11. The large viewing angle crosstalk prevention Mini/Micro-LED chip of claim 1, wherein the bottom reflective structure is connected to the electrodes and the surrounding reflective structures are insulated from the bottom reflective structure; the bottom reflective structure has a ring of insulation around the Mini/Micro-LED chip.
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| CN116525729A (en) * | 2023-07-05 | 2023-08-01 | 季华实验室 | Display panel manufacturing method, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116525729A (en) * | 2023-07-05 | 2023-08-01 | 季华实验室 | Display panel manufacturing method, display panel and display device |
| CN116525729B (en) * | 2023-07-05 | 2024-03-01 | 季华实验室 | Display panel manufacturing method, display panel and display device |
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