CN116087222A - Wafer dark field detection device and detection method - Google Patents
Wafer dark field detection device and detection method Download PDFInfo
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- CN116087222A CN116087222A CN202211477409.3A CN202211477409A CN116087222A CN 116087222 A CN116087222 A CN 116087222A CN 202211477409 A CN202211477409 A CN 202211477409A CN 116087222 A CN116087222 A CN 116087222A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
Abstract
The invention discloses a wafer dark field detection device and a detection method, wherein the detection device comprises the following components: the device comprises a fixing assembly, an adjusting assembly, an imaging assembly and a light source assembly, wherein the fixing assembly comprises a first fixing piece, a second fixing piece and a plurality of third fixing pieces, the adjusting assembly comprises a first adjusting piece for realizing the movement of the imaging assembly on a first plane and a second adjusting piece for realizing the movement of the light source assembly on a second plane, the light source assembly comprises a plurality of linear light sources and a plurality of light source connecting pieces, the linear light sources are fixed on the third fixing pieces through the light source connecting pieces and used for providing light sources for wafers to be detected, the imaging assembly acquires images of the wafers to be detected and transmits the images to a computer, and the computer is used for carrying out image analysis and judging the defect types of the wafers. The device can conveniently and quickly adjust the angle to adapt to the light source angles required by different defects of the wafer, and can improve the acquisition speed of detection data by matching with an imaging component (such as a line scanning camera), shorten the detection time of the wafer and improve the detection precision.
Description
Technical Field
The invention relates to the technical field of wafer dark field detection, in particular to a wafer dark field detection device and a detection method.
Background
GPP wafer refers to 3-4 inch GPP (Glass Passivation Parts, glass passivation) process processed wafer, and is mainly made of silicon, and the surface of the GPP wafer is plated with metal and oxide film. And detecting defects on the surface of the wafer after GPP process treatment, including stains, crush injuries, oxide film falling off, incomplete metal film, glass defects and the like on the metal layer, the oxide layer and the glass layer.
Aiming at wafer detection, the precision requirement is very high, the existing small wafer appearance detection mainly depends on manual microscope detection, more time is spent, the detection standard cannot be quantified, and the product quality cannot be controlled.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present invention is to provide a wafer dark field detection device, so as to improve the detection accuracy and the detection efficiency of the wafer dark field and shorten the detection time of the wafer dark field.
The second objective of the present invention is to provide a wafer dark field detection method.
To achieve the above object, an embodiment of a first aspect of the present invention provides a wafer dark field detection apparatus, which includes: the imaging device comprises a fixing assembly, an adjusting assembly, an imaging assembly and a light source assembly, wherein the fixing assembly comprises a first fixing piece, a second fixing piece and a plurality of third fixing pieces, the adjusting assembly comprises a first adjusting piece and a second adjusting piece, the first adjusting piece is respectively connected with the first fixing piece and the second fixing piece, the first adjusting piece is used for enabling the imaging assembly to move on a first plane, the second adjusting piece is movably connected with the third fixing pieces, the second adjusting piece is used for enabling the light source assembly to move on a second plane, and the second plane is perpendicular to the first plane; the light source assembly comprises a plurality of linear light sources and a plurality of light source connecting pieces, the linear light sources and the light source connecting pieces are in one-to-one correspondence with the third fixing pieces, the linear light sources are fixed on the corresponding third fixing pieces through the corresponding light source connecting pieces, and the linear light sources are used for providing light sources for wafers to be detected placed on the object placing platform; the imaging assembly is fixed on the second fixing piece and is used for collecting images of the wafer to be detected and transmitting the collected images to the computer so that the computer can analyze the images and judge the defect type of the wafer.
According to the wafer dark field detection device provided by the embodiment of the invention, the imaging component is driven to move on the first plane by the first adjusting piece, the light source component is driven to move on the second plane by the second adjusting piece, and continuous uninterrupted acquisition of wafer images to be detected can be realized, so that the detection precision and the detection efficiency of the wafer can be improved, and the detection time of the wafer can be shortened.
In addition, the wafer dark field detection device of the above embodiment of the present invention may further have the following additional technical features:
according to one embodiment of the invention, the first plane is a vertical plane, and the first fixing member comprises a module fixing plate slidably fixed on a precision screw sliding table, and the module fixing plate is used for achieving fine adjustment of the imaging assembly in the Z-axis direction of the vertical plane through the precision screw sliding table.
According to one embodiment of the present invention, the second plane is a horizontal plane, the second fixing member includes a camera fixing plate and a camera fixing member, the camera fixing plate is connected with the first adjusting member, the camera fixing member is fixed on the camera fixing plate, the imaging assembly includes a line camera, the line camera is fixed on the camera fixing member, and a lens of the line camera is disposed perpendicular to the horizontal plane.
According to one embodiment of the invention, the first adjustment member is adapted to effect movement of the imaging assembly in the Z-axis direction of the vertical plane.
According to one embodiment of the invention, the camera mount is further adapted to enable movement of the camera in the Z-axis direction of the vertical plane.
According to one embodiment of the invention, at least one of the plurality of third fixing members is fixed to the first fixing member.
According to one embodiment of the invention, a plurality of the linear light sources are arranged in a central symmetry.
According to one embodiment of the invention, the light source connector is rotatably connected with the corresponding linear light source, and the light source connector is used for adjusting the Z-direction height of the corresponding linear light source and the included angle between the light source connector and the horizontal plane.
According to one embodiment of the invention, the second adjusting member is a guide rail slider, the number of the linear light sources is two, one of the two third fixing members is fixed on the first fixing member through a triangular connecting member, and the two third fixing members are oppositely arranged and slidably connected with the guide rail slider.
In order to achieve the above object, a second aspect of the present invention provides a method for detecting a dark field of a wafer, which is used in the apparatus for detecting a dark field of a wafer according to the above embodiment. The method comprises the following steps: the second adjusting piece and each light source connecting piece are adjusted so that light sources emitted by each linear light source form a preset angle with a second plane and irradiate on a wafer to be detected on the object placing platform; the first adjusting piece is adjusted so that the wafer to be detected can be clearly imaged in the imaging assembly; and controlling the imaging assembly to acquire images of the wafer to be detected, and transmitting the acquired images to a computer so that the computer can perform image analysis and determine the type of wafer defects.
According to the wafer dark field detection method, the imaging component is driven to move on the first plane by the first adjusting piece, the light source component is driven to move on the second plane by the second adjusting piece, and continuous uninterrupted acquisition of wafer images to be detected can be achieved, so that the wafer detection precision and the wafer detection efficiency can be improved, and the wafer detection time is shortened.
Drawings
FIG. 1 is a schematic diagram of a related art wafer dark field detection apparatus;
FIG. 2 is a schematic diagram of a dark field wafer inspection apparatus according to one embodiment of the present invention;
FIGS. 3-4 are schematic diagrams illustrating a wafer dark field inspection apparatus according to one embodiment of the present invention;
fig. 5 is a flowchart of a wafer dark field detection method according to an embodiment of the invention.
Marking:
01. a first positioning camera; 02. a second positioning camera; 03. detecting a camera; 04. a displacement mechanism; 05. an inking mechanism; 06. a mobile platform;
100. a wafer dark field detection device;
1. a fixing assembly; 2. an adjustment assembly; 3. an imaging assembly; 4. a light source assembly;
11. a first fixing member; 12. a second fixing member; 13. a plurality of third fixing members; 21. a first regulating member 21; 22. a second adjusting member; 41. a linear light source; 42. a light source connector;
111. a module fixing plate; 121. a camera fixing plate; 122. a camera fixing member; 421. an angle adjusting hole; 422. and a height adjusting hole.
Detailed Description
In the related art, wafer inspection is performed using the structure shown in fig. 1. As shown in fig. 1, the detection structure includes: a first positioning camera 01, a second positioning camera 02, a detection camera 03, a strip light source, a computer, a displacement mechanism 04, an inking mechanism 05 and a mobile platform 06. The detection flow is as follows:
step 1: and placing the wafer to be detected on a moving platform 06, moving the wafer to be detected to a first positioning camera 01 by the moving platform 06, acquiring an image of the whole wafer to be detected by the first positioning camera 01, transmitting the image into a computer, processing the image to obtain a Mapping image (map) of the wafer to be detected, and calculating the wafer fillet degree to be detected. The angle calculation process comprises the following steps: the preliminary rotation angle is calculated by extracting most of grain edges, the angle is ensured to be within 0.02 degrees after multiple rotations, and the angle is sent to the displacement mechanism 04 to rotate the wafer to be detected to be parallel to the first positioning machine 01.
Step 2: the displacement mechanism 04 moves the wafer to be detected to the position of the detection camera 03, sends a signal for starting to capture images to the detection camera 03 and the light source to enable the detection camera 03 and the light source to start working, in order to prevent the detection camera 03 from capturing images and distorting, the displacement mechanism 04 moves the wafer to be detected to the position below the detection camera 03 at a constant speed, the detection camera 03 collects images of the wafer and sends the images to a computer, and the computer analyzes the images through an AI (Artificial Intelligence) algorithm to obtain defect positions in the images.
Step 3: the defect position in the image corresponds to the Mapping image through a position matching algorithm, the displacement mechanism 05 moves the wafer to be detected to the position of the second positioning camera 02, the computer converts the defect position in the Mapping image into coordinate information of the displacement mechanism 04 and sends the coordinate information to the displacement mechanism 04, the displacement mechanism 04 moves to the corresponding coordinate position and controls the inking mechanism 05 to print out ink dots of plus or minus 0.2mm at the exact center of the wafer to be detected.
Step 4: after the whole wafer to be detected is subjected to dotting (one time of marking), the displacement mechanism 04 moves the wafer to the initial position.
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
A wafer dark field detection apparatus and a detection method according to embodiments of the present invention are described in detail below with reference to fig. 2 to 5.
Fig. 2 is a block diagram of a wafer dark field inspection apparatus according to an embodiment of the present invention.
In an embodiment of the present invention, as shown in fig. 2, a wafer dark field detection apparatus 100 includes: the fixing assembly 1, the adjusting assembly 2, the imaging assembly 3 and the light source assembly 4, the fixing assembly 1 comprises a first fixing member 11, a second fixing member 12 and a plurality of third fixing members 13, and the adjusting assembly 2 can be divided into a first adjusting member 21 and a second adjusting member 22.
Referring to fig. 2, a first adjusting member 21 is respectively connected to the first fixing member 11 and the second fixing member 12, the first adjusting member 21 is configured to move the imaging assembly 3 in a first plane (e.g., a vertical plane), the second adjusting member 22 is movably connected to the third fixing member 13, and the second adjusting member 22 is configured to move the light source assembly 4 in a second plane (e.g., a horizontal plane), wherein the second plane is perpendicular to the first plane.
The light source assembly 4 comprises a plurality of linear light sources 41 and a plurality of light source connecting pieces 42, the linear light sources 41 and the light source connecting pieces 42 are in one-to-one correspondence with the third fixing pieces 13, the linear light sources 41 are fixed on the corresponding third fixing pieces 13 through the corresponding light source connecting pieces 42, and the linear light sources 41 are used for providing light sources for wafers to be detected placed on the object placing platform and used for illuminating the wafers to be detected, so that the imaging assembly 3 is convenient to take pictures. Wherein, the plurality of linear light sources 41 may be arranged in a central symmetry.
The imaging assembly 3 (which may employ a linear camera) is fixed on the second fixing member 12, and the imaging assembly 3 is used for performing image acquisition on the wafer to be inspected, and transmitting the acquired image to a computer, so that the computer performs image analysis and determines the wafer defect type.
Therefore, the wafer dark field detection device drives the imaging component 3 to move on the first plane through the first adjusting piece 21, drives the light source 4 to move on the second plane through the second adjusting piece 22, and can realize continuous uninterrupted acquisition of wafer images to be detected, so that the wafer detection precision and detection efficiency can be improved, and the wafer detection time can be shortened.
In one embodiment of the present invention, as shown in fig. 3, the first plane is a vertical plane and the second plane is a horizontal plane.
In this embodiment, referring to fig. 3, the first fixing member 11 may include a module fixing plate 111. The module fixing plate 111 may be used to provide a mounting fixing position of the entire wafer dark field inspection device while providing a mounting space of the first adjusting member 21.
Specifically, the module fixing plate 111 is slidably fixed on the precision screw slide table, and the module fixing plate 111 is used to achieve fine adjustment of the imaging assembly 3 in the Z-axis direction of the vertical plane through the precision screw slide table. Therefore, the installation and debugging of each structure of the wafer dark field detection device 100 can be greatly facilitated.
Wherein the first adjustment member 21 is used to effect movement of the imaging assembly 3 in the Z-axis direction of the vertical plane in order to effect clear imaging of the imaging assembly 3.
Referring to fig. 3, the second fixing member 12 may include a camera fixing plate 121 and a camera fixing member 122, the camera fixing plate 121 is connected with the first adjusting member 21, the camera fixing member 122 is fixed on the camera fixing plate 121, the imaging assembly 3 includes a line camera fixed on the camera fixing member 122, and a lens of the line camera is disposed perpendicularly to the horizontal plane.
As one example, the camera mount 122 is also used to enable the linear camera to move in the Z-axis direction of the vertical plane in order to enable clear imaging of the imaging assembly 3.
In one embodiment of the present invention, at least one of the plurality of third fixing members 13 is fixed to the first fixing member 11 for adjustment of the light source assembly 4.
In one embodiment of the present invention, the light source connector 42 is rotatably connected to the corresponding linear light source 41, and the light source connector 42 is used to adjust the Z-direction height and the angle with the horizontal plane of the corresponding linear light source 41.
Specifically, referring to fig. 4, the light source connector 42 may be provided with an angle adjustment hole 421 and a height adjustment hole 422, wherein the angle adjustment hole 421 may enable the corresponding line-type light source 41 to rotate within an angle range of 0 to 90 °, and the height adjustment hole 422 may enable the corresponding line-type light source 41 to move in the Z-axis direction. Thereby, the compatibility of the linear light source 41 can be improved.
In one embodiment of the present invention, the second adjusting member 22 may be a rail slider, and the third fixing member 13 may slide on the rail slider, so that the moving accuracy of the linear light source 41 may be greatly improved.
As a specific example, as shown in fig. 4, the number of the linear light sources 41 is two, one of the two third fixing members 13 is fixed to the first fixing member 11 through the triangular connecting member 5, and the two third fixing members 13 are disposed opposite to each other and slidably connected to the rail slider.
The working principle of the wafer dark field detection device according to the embodiment of the present invention is described below by fig. 4:
referring to fig. 4, the precise screw rod sliding table is adopted in the invention to provide precise Z-direction fine adjustment for the imaging component 3, so that the installation and the debugging are greatly facilitated. The linear light source 41 can realize X-direction movement through the guide rail sliding block, so that the light source movement precision is greatly improved; meanwhile, the light source connecting piece 42 provides Z direction and angle adjustment for the linear light source 41, so that the compatibility of different wafers to be detected is greatly improved.
In performing wafer inspection, two oppositely disposed linear light sources 41 may be adjusted to form an angle of 30 degrees with the horizontal to obliquely direct the illumination toward the wafer to be inspected. The two pair of linear light sources 41 irradiate the wafer to be inspected from both sides, so that defects on both end surfaces of the wafer to be inspected can be illuminated at the same time. Further, the imaging component 3 adopting the line camera is adjusted by the first adjusting piece 21, the image is acquired by utilizing the line camera, and the detection speed of the wafer to be detected is greatly improved due to the large field of view of the line camera.
In summary, the device for detecting the dark field of the wafer in the embodiment of the invention can greatly improve the speed of image acquisition by using the linear array camera with higher resolution and larger visual field to acquire the image of the wafer to be detected, has clearer imaging, ensures that the defects such as the concave and the like are more obvious, and can effectively improve the detection efficiency. Meanwhile, uninterrupted image acquisition and processing can be realized, so that the detection time can be shortened. In addition, the device has simple structure, and is easy to operate and realize when detecting the wafer.
Based on the wafer dark field detection device of the embodiment, the invention provides a wafer dark field detection method.
As shown in fig. 5, the wafer dark field detection method includes the following steps:
s1, adjusting the second adjusting piece and each light source connecting piece to enable light sources emitted by each linear light source to form a preset angle with the second plane, and all the light sources irradiate on a wafer to be detected on the object placing platform.
Wherein the preset angle may be 30 °.
S2, adjusting the first adjusting piece to enable the wafer to be detected to be clearly imaged in the imaging assembly.
The imaging assembly may include a line camera, among other things.
S3, controlling the imaging component to acquire images of the wafer to be detected, and transmitting the acquired images to a computer so that the computer can analyze the images and judge the defect type of the wafer.
According to the wafer dark field detection method, the wafer is detected by the wafer dark field detection device, the detection is simple and easy to achieve, the detection accuracy and the detection speed are high, the equipment cost is low, and the problem that equipment is expensive and difficult to equip can be solved.
It should be noted that the logic and/or steps represented in the flowcharts or otherwise described herein, for example, may be considered as a ordered listing of executable instructions for implementing logical functions, and may be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). In addition, the computer readable medium may even be paper or other suitable medium on which the program is printed, as the program may be electronically captured, via, for instance, optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner, if necessary, and then stored in a computer memory.
It is to be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable Gate Arrays (PGAs), field Programmable Gate Arrays (FPGAs), and the like.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (10)
1. A wafer dark field detection apparatus, comprising: the fixing assembly comprises a first fixing piece, a second fixing piece and a plurality of third fixing pieces, an adjusting assembly, an imaging assembly and a light source assembly, wherein the adjusting assembly comprises a first adjusting piece and a second adjusting piece,
the first adjusting piece is respectively connected with the first fixing piece and the second fixing piece, the first adjusting piece is used for enabling the imaging assembly to move on a first plane, the second adjusting piece is movably connected with the third fixing piece, the second adjusting piece is used for enabling the light source assembly to move on a second plane, and the second plane is perpendicular to the first plane;
the light source assembly comprises a plurality of linear light sources and a plurality of light source connecting pieces, the linear light sources and the light source connecting pieces are in one-to-one correspondence with the third fixing pieces, the linear light sources are fixed on the corresponding third fixing pieces through the corresponding light source connecting pieces, and the linear light sources are used for providing light sources for wafers to be detected placed on the object placing platform;
the imaging assembly is fixed on the second fixing piece and is used for collecting images of the wafer to be detected and transmitting the collected images to the computer so that the computer can analyze the images and judge the defect type of the wafer.
2. The wafer dark field detection device according to claim 1, wherein the first plane is a vertical plane, the first fixing member comprises a module fixing plate slidably fixed on a precision screw sliding table, and the module fixing plate is used for achieving fine adjustment of the imaging assembly in the Z-axis direction of the vertical plane through the precision screw sliding table.
3. The wafer dark field detection device according to claim 2, wherein the second plane is a horizontal plane, the second fixing member includes a camera fixing plate and a camera fixing member, the camera fixing plate is connected with the first adjusting member, the camera fixing member is fixed on the camera fixing plate, the imaging assembly includes a line camera, the line camera is fixed on the camera fixing member, and a lens of the line camera is perpendicular to the horizontal plane.
4. The wafer dark field detection apparatus of claim 2, wherein the first adjustment member is configured to enable movement of the imaging assembly in a Z-axis direction of the vertical plane.
5. A wafer dark field detection apparatus according to claim 3, wherein the camera mount is further adapted to effect movement of the linear array camera in the Z-axis direction of the vertical plane.
6. The wafer dark field inspection apparatus of claim 1, wherein at least one of the plurality of third fixtures is secured to the first fixture.
7. The wafer dark field detection apparatus of claim 1, wherein a plurality of the line-type light sources are arranged in central symmetry.
8. The wafer dark field inspection apparatus of claim 3, wherein the light source connector is rotatably connected to a corresponding line light source, and the light source connector is configured to adjust a Z-height of the corresponding line light source and an angle with the horizontal plane.
9. The wafer dark field detection apparatus according to any one of claims 1 to 8, wherein the second adjusting member is a rail slider, the number of the linear light sources is two, one of the two third fixing members is fixed to the first fixing member through a triangle connecting member, and the two third fixing members are disposed opposite to each other and slidably connected to the rail slider.
10. A wafer dark field detection method for a wafer dark field detection apparatus according to any one of claims 1 to 9, comprising the steps of:
the second adjusting piece and each light source connecting piece are adjusted so that light sources emitted by each linear light source form a preset angle with a second plane and irradiate on a wafer to be detected on the object placing platform;
the first adjusting piece is adjusted so that the wafer to be detected can be clearly imaged in the imaging assembly;
and controlling the imaging assembly to acquire images of the wafer to be detected, and transmitting the acquired images to a computer so that the computer can perform image analysis and determine the type of wafer defects.
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| CN202211477409.3A CN116087222A (en) | 2022-11-23 | 2022-11-23 | Wafer dark field detection device and detection method |
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| CN202211477409.3A CN116087222A (en) | 2022-11-23 | 2022-11-23 | Wafer dark field detection device and detection method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117589790A (en) * | 2023-11-30 | 2024-02-23 | 魅杰光电科技(上海)有限公司 | Dark field lighting device and optical detection system for dark field lighting |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117589790A (en) * | 2023-11-30 | 2024-02-23 | 魅杰光电科技(上海)有限公司 | Dark field lighting device and optical detection system for dark field lighting |
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