CN116073765B - Active load inductive clamp circuit applied to E-type radio frequency power amplifier - Google Patents
Active load inductive clamp circuit applied to E-type radio frequency power amplifier Download PDFInfo
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- CN116073765B CN116073765B CN202310150651.8A CN202310150651A CN116073765B CN 116073765 B CN116073765 B CN 116073765B CN 202310150651 A CN202310150651 A CN 202310150651A CN 116073765 B CN116073765 B CN 116073765B
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- 239000003990 capacitor Substances 0.000 claims abstract description 55
- 238000001514 detection method Methods 0.000 claims description 47
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- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
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- 239000010753 BS 2869 Class E Substances 0.000 description 2
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- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention provides an active load inductive clamping circuit applied to an E-type radio frequency power amplifier, which comprises the following components: the device comprises a radio frequency choke coil, a MOSFET S1, a driving module, a parallel capacitor, a resonant inductor L0, a resonant capacitor C0, a clamping circuit and a load. The grid electrode of the MOSFET S1 is connected with the output end of the driving module and receives a driving signal, and the drain electrode of the MOSFET S1 is connected with the first end of the radio frequency choke coil, the first end of the parallel capacitor and the first end of the resonant inductor L0; the second end of the radio frequency choke coil is connected with a power supply VDD; the second end of the resonant inductor L0 is connected with the first end of the clamping circuit and the first end of the resonant capacitor C0, and the second end of the resonant capacitor C0 is connected with the first end of the load.
Description
Technical Field
The invention relates to the technical field of E-class radio frequency power amplifiers, in particular to an active load inductive clamping circuit applied to the E-class radio frequency power amplifier.
Background
The radio frequency power amplifier or the radio frequency power supply of the high-power ISM wave band is a core part in the medical field and the semiconductor manufacturing field, in particular to the semiconductor manufacturing field. The reliability and energy conversion efficiency of a radio frequency power amplifier or a radio frequency power supply are greatly challenged by the need to operate at 24 hours throughout the day. Based on this, in the field of semiconductor manufacturing where linearity is not a concern, the conventional linear power amplification scheme is gradually replaced by a higher-efficiency, more convenient and cheaper switching power amplifier due to lower energy transmission efficiency, higher cost and lower operating frequency.
In practical applications, the load of the RF power source is variable, and the requirements of the linear power amplifier on the practical work load are different from those of the linear power amplifier, whether the plasma is used for patients in the medical field or in semiconductor manufacturing. The class E switching power amplifier requires that the actual work load is an inductive load, so that the energy conversion with the theoretical efficiency of 100% is realized. When the actual operating load is a capacitive load, the energy conversion efficiency is extremely reduced, thereby burning the MOSFET tube. Although the traditional class E switching power amplifier topology has many advantages, the disadvantages are also obvious, namely: the traditional class-E power amplifier is sensitive to load, has extremely low energy conversion efficiency when the actual work load is a capacitive load and has the defect of burning MOSFET tubes, and can work with high efficiency and safety only when the actual work load is an inductive load.
Disclosure of Invention
In view of the above problems, the present invention provides an active load inductive clamp circuit applied to a class E radio frequency power amplifier, which automatically switches an actual work load to an inductive load when the actual work load is a capacitive load, thereby reducing the switching loss of a MOSFET in the class E radio frequency power amplifier, and improving the working efficiency and the safety.
The invention provides an active load inductive clamping circuit applied to an E-type radio frequency power amplifier, which comprises the following components: the device comprises a radio frequency choke coil, a MOSFET S1, a driving module, a parallel capacitor, a resonant inductor L0, a resonant capacitor C0, a clamping circuit and a load;
the grid electrode of the MOSFET S1 is connected with the output end of the driving module, a driving signal is received, the source electrode of the MOSFET S1 is grounded, and the drain electrode of the MOSFET S1 is connected with the first end of the radio frequency choke coil, the first end of the parallel capacitor and the first end of the resonant inductor L0; the second end of the radio frequency choke coil is connected with a power supply VDD; the second end of the resonant inductor L0 is connected with the first end of the clamping circuit and the first end of the resonant capacitor C0, the second end of the resonant capacitor C0 is connected with the first end of the load, and the second end of the parallel capacitor, the second end of the clamping circuit and the second end of the load are commonly grounded.
Preferably, the clamping circuit comprises a diode; the cathode of the diode is a first end of the clamping circuit and is connected with a second end of the resonant inductor L0 and a first end of the resonant capacitor C0; the anode of the diode is a second end of the clamping circuit and is used for grounding.
Preferably, the clamping circuit comprises a voltage detection module, an inverting addition module and a switching tube; the first end of the switching tube is connected with the first end of the voltage detection module, and is used as the first end of the clamping circuit to connect the second end of the resonant inductor L0 and the first end of the resonant capacitor C0; the second end of the switching tube is connected with the second end of the voltage detection module and used as the second end of the clamping circuit for grounding; the control end of the switching tube is connected with the output end of the reverse phase addition module, and the input end of the reverse phase addition module is connected with the output end of the voltage detection module.
Preferably, the clamping circuit comprises a voltage detection module, an inverting addition module, a phase shifter and a switching tube; the first end of the switching tube is connected with the first end of the voltage detection module, and is used as the first end of the clamping circuit to connect the second end of the resonant inductor L0 and the first end of the resonant capacitor C0; the second end of the switching tube is connected with the second end of the voltage detection module and used as the second end of the clamping circuit for grounding; the control end of the switching tube is connected with the output end of the phase shifter, the input end of the phase shifter is connected with the output end of the inverting addition module, and the input end of the inverting addition module is connected with the output end of the voltage detection module.
Preferably, the voltage detection module comprises a first resistor R1 and a second resistor R2; the first end of the first resistor R1 is used as the first end of the voltage detection module, the second end of the second resistor R2 is used as the second end of the voltage detection module, and the second end of the first resistor R1 is connected with the first end of the second resistor R2 and is used as the output end of the voltage detection module.
Preferably, the inverting addition module comprises a third resistor R3, a fourth resistor R4, a fifth resistor R5 and an operational amplifier; the first end of the fourth resistor R4 is used as an input end of an inverting adder module, the second end of the fourth resistor R4 is connected with the first end of the third resistor R3, the first end of the fifth resistor R5 and an inverting input end of the operational amplifier, the second end of the third resistor R3 is connected with a preset voltage-Vth, and the second end of the fifth resistor R5 is connected with an output end of the operational amplifier and is used as an output end of the inverting adder module, and the non-inverting input end of the operational amplifier is grounded.
Preferably, the predetermined voltage-Vth is a negative switching tube threshold voltage.
Preferably, the switching tube adopts a MOSFET S2; the grid electrode of the MOSFET S2 is used as the control end of the switching tube and is connected with the output end of the inverting addition module, the drain electrode of the MOSFET S2 is used as the first end of the switching tube, and the source electrode of the MOSFET S2 is used as the second end of the switching tube.
The beneficial effects of the invention are as follows: the invention is additionally provided with a clamping circuit based on the traditional E-type radio frequency power amplifier. When the load is converted to the capacitive load, the negative voltage between the resonant inductor L0 and the resonant capacitor C0 is eliminated, and the active load inductive clamping is realized, so that the switching loss is reduced, the working efficiency of the circuit is improved, and the safety performance is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a conventional class E RF power amplifier;
FIG. 2 is a waveform diagram of drain-source voltage of a conventional class E RF power amplifier;
FIG. 3 is a schematic circuit diagram of an active load inductive clamp circuit for use in class E RF power amplifiers in accordance with the present invention;
fig. 4 is a waveform diagram of a voltage Vlc and a drain-source voltage Vds under a conventional class E rf power amplifier inductive load;
fig. 5 is a waveform diagram of a voltage Vlc under a capacitive load and a drain-source voltage Vds of a conventional class E rf power amplifier;
FIG. 6 is a schematic circuit diagram of a first embodiment of an active load sense clamp circuit of the present invention;
FIG. 7 is a schematic circuit diagram of a second embodiment of an active load sense clamp circuit of the present invention;
FIG. 8 is a schematic circuit diagram of a third embodiment of an active load sense clamp circuit of the present invention;
fig. 9 is a waveform diagram of the voltage Vlc and the drain-source voltage Vds of the active load inductive clamp circuit according to the present invention;
FIG. 10 is a schematic circuit diagram of a fourth embodiment of an active load sense clamp circuit of the present invention;
FIG. 11 is a graph comparing the operating efficiency of the active load inductive clamp circuit of the present invention.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The terminology used in the embodiments of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, the "plurality" generally includes at least two, but does not exclude the case of at least one.
The invention will be further described with reference to the drawings and the specific examples.
Fig. 1 shows a conventional class E radio frequency power amplifier, which includes a MOSFET S1, a driving module, a radio frequency choke coil, a parallel capacitor, an LC resonant circuit and a load, where the parallel capacitor includes a MOSFET output parasitic capacitor and an external capacitor, and the LC resonant circuit may be an LC series resonant circuit or other LC components.
As shown in fig. 1, according to the operating principle of the class E rf power amplifier, when the MOSFET S1 is turned on, the shunt capacitor and the load branch are discharged to the MOSFET S1, and when the MOSFET S1 is turned off, the charge stored in the rf choke charges the shunt capacitor and the load, the turn-on/off process of the MOSFET S1 is a signal period, and in one period, the two ends of the MOSFET S1 do not consume power, and in the charge/discharge process, the load forms a periodic signal voltage. Therefore, the E-type radio frequency power amplifier successfully copies the signal frequency to the load end, and efficiently converts the power supply power into the load.
The drain-source voltage waveform of the conventional E-type radio frequency power amplifier is shown in fig. 2. As shown in fig. 2 (a), under a suitable inductive load, the drain-source voltage waveform of the conventional E-type radio frequency power amplifier is shown. By selecting a proper inductive load, the drain-source voltage of the MOSFET S1 is 0 when the MOSFET S1 is switched, so that Zero Voltage Switching (ZVS) is realized; as shown in fig. 2 (b), under capacitive load, the drain-source voltage waveform of the conventional class E rf power amplifier. Because the conventional class E rf amplifier operates on a capacitive load, the drain-source voltage of the MOSFET S1 is at a high value when switching, and Zero Voltage Switching (ZVS) cannot be achieved. In fig. 2 (b), the voltage hard-switching switch is represented, so that a great amount of switching loss exists, and therefore, the working efficiency of the class E radio-frequency power amplifier is very low, the MOSFET S1 heats seriously, and the safety defect exists.
In order to solve the problem of capacitive load, the invention designs an active load inductive clamping circuit applied to the E-class radio frequency power amplifier, as shown in figure 3, which comprises: the device comprises a radio frequency choke coil, a MOSFET S1, a driving module, a parallel capacitor, a resonant inductor L0, a resonant capacitor C0, a clamping circuit and a load.
The grid electrode of the MOSFET S1 is connected with the output end of the driving module and receives a driving signal, the source electrode of the MOSFET S1 is grounded, and the drain electrode of the MOSFET S1 is connected with the first end of the radio frequency choke coil, the first end of the parallel capacitor and the first end of the resonant inductor L0; the second end of the radio frequency choke coil is connected with a power supply VDD; the second end of the resonant inductor L0 is connected with the first end of the clamping circuit and the first end of the resonant capacitor C0, the second end of the resonant capacitor C0 is connected with the first end of the load, and the second end of the parallel capacitor, the second end of the clamping circuit and the second end of the load are grounded together.
In the conventional class E rf power amplifier, when the load is an inductive load, appropriate values of the resonant inductor L0, the resonant capacitor C0 and the parallel capacitor are selected, so that the class E rf power amplifier can operate at high efficiency, and the voltage Vlc between the resonant inductor L0 and the resonant capacitor C0 and the drain-source voltage Vds of the MOSFET S1 are as shown in fig. 4. At this time, the voltage Vlc between the resonance inductance L0 and the resonance capacitance C0 is positive, and the MOSFET S1 has almost no switching loss.
However, when the load becomes a capacitive load, a negative voltage gradually appears at the voltage between L0 and C0, and the drain-source voltage waveform of the MOSFET S1 starts to be hard-switched, and the ZVS standard cannot be met. The voltage Vlc between the resonance inductance L0 and the resonance capacitance C0 and the drain-source voltage Vds of the MOSFET S1 are shown in fig. 5.
The invention adds a clamping circuit on the basis of the traditional E-type radio frequency power amplifier. As the load gradually shifts to capacitance, the voltage between the resonance inductance L0 and the resonance capacitance C0 gradually has a negative voltage. By adding the clamping circuit, negative voltage is eliminated, and active load inductive clamping is realized, so that the working efficiency of the circuit is improved, the switching loss is reduced, and the safety performance is improved.
Fig. 6 shows a first embodiment of the active load sense clamp of the present invention, wherein the clamp comprises a diode.
As shown in fig. 6, the cathode of the diode is a first end of the clamping circuit, and is connected with a second end of the resonant inductor L0 and a first end of the resonant capacitor C0; the anode of the diode is a second end of the clamping circuit and is used for grounding.
When the load gradually changes to the capacity, the voltage between the resonant inductor L0 and the resonant capacitor C0 gradually generates negative voltage, and at the moment, the diode is conducted to clamp the voltage between the resonant inductor L0 and the resonant capacitor C0 to be near 0V, so that the negative voltage between the resonant inductor L0 and the resonant capacitor C0 is eliminated, and the active load inductive clamping is realized.
Fig. 7 shows a second embodiment of the active load sense clamp of the present invention, wherein the clamp includes a voltage detection module, an inverting adder module, and a switching tube.
As shown in fig. 7, the first end of the switch tube is connected to the first end of the voltage detection module, and is used as the first end of the clamping circuit, and is connected to the second end of the resonant inductor L0 and the first end of the resonant capacitor C0; the second end of the switching tube is connected with the second end of the voltage detection module and used as the second end of the clamping circuit for grounding; the control end of the switching tube is connected with the output end of the inverting addition module, and the input end of the inverting addition module is connected with the output end of the voltage detection module.
The voltage detection module detects the voltage between the resonant inductor L0 and the resonant capacitor C0, when the load gradually changes to the capacitive state, the voltage between the resonant inductor L0 and the resonant capacitor C0 gradually generates negative voltage, at the moment, the voltage detection module detects the negative voltage to be output to the inverting addition module, and the inverting addition module performs inverting addition conversion on the negative voltage and the preset voltage, so that the switching tube is controlled to be conducted, and the negative voltage between the resonant inductor L0 and the resonant capacitor C0 is eliminated. The predetermined voltage is a negative threshold voltage of the switching tube and is used for controlling the switching tube to be conducted when the negative voltage is detected.
Fig. 8 shows a third embodiment of the active load sense clamp circuit of the present invention, wherein the voltage detection module includes a first resistor R1 and a second resistor R2, the inverting summing module includes a third resistor R3, a fourth resistor R4, a fifth resistor R5, and an operational amplifier, and the switching transistor adopts a MOSFET S2.
As shown in fig. 8, the first end of the first resistor R1 is used as the first end of the voltage detection module, the second end of the second resistor R2 is used as the second end of the voltage detection module, and the second end of the first resistor R1 is connected to the first end of the second resistor R2 and is used as the output end of the voltage detection module. The first end of the fourth resistor R4 is used as an input end of the inverting addition module, the second end of the fourth resistor R4 is connected with the first end of the third resistor R3, the first end of the fifth resistor R5 and the inverting input end of the operational amplifier, the second end of the third resistor R3 is connected with the preset voltage-Vth, the second end of the fifth resistor R5 is connected with the output end of the operational amplifier and is used as the output end of the inverting addition module, and the non-inverting input end of the operational amplifier is grounded; the grid of MOSFET S2 is as the control end of switch tube, connects the output of inverting adder module, and the drain electrode of MOSFET S2 is as the first end of switch tube, and the source electrode of MOSFET S2 is as the second end of switch tube.
The voltage detection module adopts a first resistor R1 and a second resistor R2 and is used for detecting the voltage between the resonant inductor L0 and the resonant capacitor C0, and voltage detection signals are output after the voltage is divided by the first resistor R1 and the second resistor R2; the inverting addition module receives the voltage detection signal and performs inverting addition conversion with a preset voltage-Vth to obtain a control signal; the switching tube receives a control signal to conduct on-off control, and an active load inductive clamping function is achieved.
In this active load inductive clamp circuit, the voltage Vlc between the resonant inductance L0 and the resonant capacitance C0 and the drain-source voltage Vds of the MOSFET S1 are shown in fig. 9. The negative voltage between the resonant inductance L0 and the voltage Vlc between the resonant capacitance C0 is eliminated. Meanwhile, from the view of the drain-source voltage waveform in fig. 5, the voltage at the time of MOSFET conduction is approximately 30V, and after the clamp circuit is adopted, the drain-source voltage is clamped to be about 10V, so that the switching loss is reduced, and the working efficiency is improved.
Fig. 10 shows a fourth embodiment of the active load sense clamp of the present invention, wherein the clamp includes a voltage detection module, an inverting adder module, a phase shifter and a switching tube.
As shown in fig. 10, the first end of the switching tube is connected to the first end of the voltage detection module, and is used as the first end of the clamping circuit, and is connected to the second end of the resonant inductor L0 and the first end of the resonant capacitor C0; the second end of the switching tube is connected with the second end of the voltage detection module and used as the second end of the clamping circuit for grounding; the control end of the switching tube is connected with the output end of the phase shifter, the input end of the phase shifter is connected with the output end of the inverting addition module, and the input end of the inverting addition module is connected with the output end of the voltage detection module.
In the class-E radio frequency power amplification circuit, due to the influence of parasitic parameters, the voltage detection signal output by the voltage detection module can generate phase shift, so that the switching time sequence of the switching tube is shifted from the expected time sequence, and the phase shifter is added to carry out phase correction so that the switching time sequence of the switching tube is identical to the expected time sequence.
Fig. 11 shows a comparison of the operating efficiency of the active load inductive clamp circuit of the present invention. As shown in fig. 11 (a), when the MOSFET drain-source voltage waveform phase implements ZVS, the radio frequency power amplifier efficiency is approximately 93.75%. As shown in fig. 11 (b), when the load is shifted to the capacitive load, the output current becomes significantly high, and the MOSFET is not operating in the ZVS state, but the overall efficiency is significantly reduced although the output becomes high. As shown in fig. 11 (c), after the active load inductive clamping circuit clamps, the drain-source voltage waveform of the MOSFET does not reach the best working state, but the temperature rise phenomenon caused by non-ZVS of the MOSFET is greatly relieved, so that the overall efficiency is 89.09%.
In summary, the clamping circuit is additionally arranged on the basis of the traditional E-class radio frequency power amplifier. When the load is converted to the capacitive load, the negative voltage between the resonant inductor L0 and the resonant capacitor C0 is eliminated, and the active load inductive clamping is realized, so that the switching loss is reduced, the working efficiency of the circuit is improved, and the safety performance is improved.
While the foregoing description illustrates and describes the preferred embodiments of the present invention, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as limited to other embodiments, and is capable of numerous other combinations, modifications and environments and is capable of changes or modifications within the scope of the inventive concept as described herein, either as a result of the foregoing teachings or as a result of the knowledge or technology in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (10)
1. An active load inductive clamp circuit applied to an E-class radio frequency power amplifier, the active load inductive clamp circuit comprising: the device comprises a radio frequency choke coil, a MOSFET S1, a driving module, a parallel capacitor, a resonant inductor L0, a resonant capacitor C0, a clamping circuit and a load; the grid electrode of the MOSFET S1 is connected with the output end of the driving module, a driving signal is received, the source electrode of the MOSFET S1 is grounded, and the drain electrode of the MOSFET S1 is connected with the first end of the radio frequency choke coil, the first end of the parallel capacitor and the first end of the resonant inductor L0; the second end of the radio frequency choke coil is connected with a power supply VDD; the second end of the resonant inductor L0 is connected with the first end of the clamping circuit and the first end of the resonant capacitor C0, the second end of the resonant capacitor C0 is connected with the first end of the load, and the second end of the parallel capacitor, the second end of the clamping circuit and the second end of the load are commonly grounded; the clamping circuit comprises a voltage detection module, an inverting addition module and a switching tube; the first end of the switching tube is connected with the first end of the voltage detection module, and is used as the first end of the clamping circuit to connect the second end of the resonant inductor L0 and the first end of the resonant capacitor C0; the second end of the switching tube is connected with the second end of the voltage detection module and used as the second end of the clamping circuit for grounding; the control end of the switching tube is connected with the output end of the reverse phase addition module, and the input end of the reverse phase addition module is connected with the output end of the voltage detection module.
2. The active load inductive clamp circuit of claim 1, wherein said voltage detection module comprises a first resistor R1 and a second resistor R2; the first end of the first resistor R1 is used as the first end of the voltage detection module, the second end of the second resistor R2 is used as the second end of the voltage detection module, and the second end of the first resistor R1 is connected with the first end of the second resistor R2 and is used as the output end of the voltage detection module.
3. The active load inductive clamp circuit of claim 1, wherein said inverting summing module comprises a third resistor R3, a fourth resistor R4, a fifth resistor R5, and an operational amplifier; the first end of the fourth resistor R4 is used as an input end of an inverting adder module, the second end of the fourth resistor R4 is connected with the first end of the third resistor R3, the first end of the fifth resistor R5 and an inverting input end of the operational amplifier, the second end of the third resistor R3 is connected with a preset voltage-Vth, and the second end of the fifth resistor R5 is connected with an output end of the operational amplifier and is used as an output end of the inverting adder module, and the non-inverting input end of the operational amplifier is grounded.
4. The active load inductive clamp circuit of claim 3, wherein the predetermined voltage-Vth is a negative switching tube threshold voltage.
5. The active load inductive clamp circuit of claim 1, wherein said switching tube employs MOSFET S2; the grid electrode of the MOSFET S2 is used as the control end of the switching tube and is connected with the output end of the inverting addition module, the drain electrode of the MOSFET S2 is used as the first end of the switching tube, and the source electrode of the MOSFET S2 is used as the second end of the switching tube.
6. An active load inductive clamp circuit applied to an E-class radio frequency power amplifier, the active load inductive clamp circuit comprising: the device comprises a radio frequency choke coil, a MOSFET S1, a driving module, a parallel capacitor, a resonant inductor L0, a resonant capacitor C0, a clamping circuit and a load; the grid electrode of the MOSFET S1 is connected with the output end of the driving module, a driving signal is received, the source electrode of the MOSFET S1 is grounded, and the drain electrode of the MOSFET S1 is connected with the first end of the radio frequency choke coil, the first end of the parallel capacitor and the first end of the resonant inductor L0; the second end of the radio frequency choke coil is connected with a power supply VDD; the second end of the resonant inductor L0 is connected with the first end of the clamping circuit and the first end of the resonant capacitor C0, the second end of the resonant capacitor C0 is connected with the first end of the load, and the second end of the parallel capacitor, the second end of the clamping circuit and the second end of the load are commonly grounded; the clamping circuit comprises a voltage detection module, an inverting addition module, a phase shifter and a switching tube; the first end of the switching tube is connected with the first end of the voltage detection module, and is used as the first end of the clamping circuit to connect the second end of the resonant inductor L0 and the first end of the resonant capacitor C0; the second end of the switching tube is connected with the second end of the voltage detection module and used as the second end of the clamping circuit for grounding; the control end of the switching tube is connected with the output end of the phase shifter, the input end of the phase shifter is connected with the output end of the inverting addition module, and the input end of the inverting addition module is connected with the output end of the voltage detection module.
7. The active load inductive clamp circuit of claim 6, wherein said voltage detection module comprises a first resistor R1 and a second resistor R2; the first end of the first resistor R1 is used as the first end of the voltage detection module, the second end of the second resistor R2 is used as the second end of the voltage detection module, and the second end of the first resistor R1 is connected with the first end of the second resistor R2 and is used as the output end of the voltage detection module.
8. The active load inductive clamp circuit of claim 6, wherein said inverting summing module comprises a third resistor R3, a fourth resistor R4, a fifth resistor R5, and an operational amplifier; the first end of the fourth resistor R4 is used as an input end of an inverting adder module, the second end of the fourth resistor R4 is connected with the first end of the third resistor R3, the first end of the fifth resistor R5 and an inverting input end of the operational amplifier, the second end of the third resistor R3 is connected with a preset voltage-Vth, and the second end of the fifth resistor R5 is connected with an output end of the operational amplifier and is used as an output end of the inverting adder module, and the non-inverting input end of the operational amplifier is grounded.
9. The active load inductive clamp circuit of claim 8, wherein the predetermined voltage-Vth is a negative switching tube threshold voltage.
10. The active load inductive clamp circuit of claim 6, wherein said switching tube employs MOSFET S2; the grid electrode of the MOSFET S2 is used as the control end of the switching tube and is connected with the output end of the inverting addition module, the drain electrode of the MOSFET S2 is used as the first end of the switching tube, and the source electrode of the MOSFET S2 is used as the second end of the switching tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| JP2007189513A (en) * | 2006-01-13 | 2007-07-26 | Kikusui Electr0Nics Corp | Clamp circuit and test signal generator |
| CN205142521U (en) * | 2015-11-05 | 2016-04-06 | 苏州大学 | Carbon nanotube film sound source system based on clamp circuit |
| CN108923755A (en) * | 2018-06-12 | 2018-11-30 | 合肥工业大学 | A kind of small DC feedback inductance E power-like amplifier of band decompression load circuit |
| CN209072437U (en) * | 2018-10-22 | 2019-07-05 | 东南大学 | A kind of dynamic body bias E power-like amplifier |
| CN210724812U (en) * | 2019-12-11 | 2020-06-09 | 西安新海脉冲科技有限公司 | Pulse modulator circuit with steep trailing edge and pulse modulator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE10252146B4 (en) * | 2002-11-09 | 2012-03-29 | Hüttinger Elektronik Gmbh + Co. Kg | Method for generating a high-frequency alternating voltage and high-frequency power amplifier therefor |
| CN102428760A (en) * | 2009-05-20 | 2012-04-25 | 皇家飞利浦电子股份有限公司 | Resonant power converter driving an inductive load like a discharge lamp |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007189513A (en) * | 2006-01-13 | 2007-07-26 | Kikusui Electr0Nics Corp | Clamp circuit and test signal generator |
| CN205142521U (en) * | 2015-11-05 | 2016-04-06 | 苏州大学 | Carbon nanotube film sound source system based on clamp circuit |
| CN108923755A (en) * | 2018-06-12 | 2018-11-30 | 合肥工业大学 | A kind of small DC feedback inductance E power-like amplifier of band decompression load circuit |
| CN209072437U (en) * | 2018-10-22 | 2019-07-05 | 东南大学 | A kind of dynamic body bias E power-like amplifier |
| CN210724812U (en) * | 2019-12-11 | 2020-06-09 | 西安新海脉冲科技有限公司 | Pulse modulator circuit with steep trailing edge and pulse modulator |
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| CN116073765A (en) | 2023-05-05 |
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