CN116072600A - Trench forming method, trench structure and semiconductor device - Google Patents

Trench forming method, trench structure and semiconductor device Download PDF

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Publication number
CN116072600A
CN116072600A CN202310011589.4A CN202310011589A CN116072600A CN 116072600 A CN116072600 A CN 116072600A CN 202310011589 A CN202310011589 A CN 202310011589A CN 116072600 A CN116072600 A CN 116072600A
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Prior art keywords
etching
trench
groove
substrate
gas
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CN202310011589.4A
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Chinese (zh)
Inventor
袁慎顽
沈显青
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GTA Semiconductor Co Ltd
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GTA Semiconductor Co Ltd
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Priority to CN202310011589.4A priority Critical patent/CN116072600A/en
Publication of CN116072600A publication Critical patent/CN116072600A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions

Abstract

The application relates to a trench forming method, a trench structure and a semiconductor device. A trench forming method, comprising: providing a substrate; anisotropically etching the substrate to form a groove; the etching agent for anisotropic etching comprises a first etching gas and a second etching gas, wherein the second etching gas comprises an oxygen-containing gas, the flow of the oxygen-containing gas is A, the total flow of the etching agent is B, A/B=C, and C is a first preset value; the depth of the groove is H, the width of the groove is W, the width of the groove refers to the radial dimension of the notch of the groove along the groove, and W is smaller than H. The lateral etching loss of the substrate at the side wall of the top of the groove can be reduced, and the problems of electric leakage and the like of the semiconductor device manufactured by the groove forming method are avoided.

Description

Trench forming method, trench structure and semiconductor device
Technical Field
The present application relates to the field of semiconductor technology, and more particularly to a trench forming method, a trench structure, and a semiconductor device.
Background
A trench etch process generally refers to a process of etching a trench into a substrate. However, the semiconductor device manufactured by the conventional trench etching method has problems such as leakage.
Disclosure of Invention
Based on this, it is necessary to provide a trench forming method, a trench structure and a semiconductor device for solving the problems of leakage and the like of the semiconductor device manufactured by the conventional trench etching method.
According to a first aspect of the present application, there is provided a trench forming method including:
providing a substrate;
anisotropically etching the substrate to form a groove;
the etching agent for anisotropic etching comprises a first etching gas and a second etching gas, wherein the second etching gas comprises an oxygen-containing gas, the flow of the oxygen-containing gas is A, the total flow of the etching agent is B, A/B=C, and C is a first preset value;
the depth of the groove is H, the width of the groove is W, and the width of the groove refers to the radial dimension of the notch of the groove along the groove, wherein W is smaller than H.
In one embodiment, the first preset value is 40% -60%.
In one embodiment, the oxygen-containing gas comprises oxygen.
In one embodiment, the first etching gas comprises a fluorine-containing gas.
In one embodiment, the anisotropically etching the substrate to form the trench specifically includes:
and anisotropically etching the substrate by adopting a reactive ion etching process to form the groove.
In one embodiment, the process conditions for anisotropically etching the substrate to form a trench include: the power is 500W-700W, the initial etching pressure is 40-50 mtorr, and the etching temperature is 10-15 ℃.
In one embodiment, the anisotropically etching the substrate to form the trench specifically includes:
the first etching gas and the second etching gas with the first flow rate ratio are selected to carry out anisotropic etching on the substrate for preset etching time;
etching the substrate by using the first etching gas and the second etching gas with the second flow rate ratio to form the groove;
wherein the first flow rate duty cycle is greater than the second flow rate duty cycle.
In one embodiment, the preset etching time is 5s-10s.
According to a second aspect of the present application, there is provided a trench structure, manufactured by the trench forming method described above, the trench structure comprising:
a substrate; and
and the groove is formed on the substrate.
According to a third aspect of the present application, there is provided a semiconductor device comprising the trench structure described above.
According to the groove forming method, the groove structure and the semiconductor device, the ratio of the flow of the oxygen-containing gas to the total flow of the etchant is a first preset value, the groove depth of the combined groove is H, the groove width of the groove is W, the groove width of the groove refers to the radial dimension of a notch of the groove along the groove, and W is smaller than H. It can be understood that in the process of anisotropically etching the substrate, since the flow of the oxygen-containing gas is sufficiently large, the deposition speed of the oxide layer on the sidewall of the trench is approximately equal to the etching speed of the oxide layer on the sidewall of the trench, so that the lateral etching loss of the sidewall of the trench (namely, the etching loss of the sidewall of the trench in the radial direction of the trench) is smaller than the longitudinal etching loss of the wall of the trench (namely, the etching loss of the wall of the trench in the depth direction of the trench), and finally, the trench with the width W smaller than the depth H can be formed, the lateral etching loss of the sidewall of the substrate at the top of the trench can be reduced, and the problems of electric leakage and the like of the semiconductor device manufactured by the trench forming method are avoided.
Drawings
FIG. 1 is a flow chart of a method of forming a trench in an embodiment of the present application;
FIGS. 2 (a) -2 (d) are schematic diagrams illustrating a process for fabricating a trench structure using the trench formation method in an embodiment of the present application;
FIG. 3 is a flow chart of a method of forming a trench in an embodiment of the present application;
FIG. 4 is a flow chart of a method of forming a trench in an embodiment of the present application;
fig. 5 shows a schematic structural diagram of a trench structure in an embodiment of the present application.
In the figure: 210. a substrate; 220. a groove; 230. an oxide layer; 240. and protecting the pattern layer.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. In this way, variations from the illustrated shape due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be limited to the particular shapes of the regions illustrated herein, but rather include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle typically has rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted regions. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface over which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
The inventors of the present application have found that sulfur hexafluoride (SF) is generally used in conventional trench etching methods 6 ) The substrate is etched, however, sulfur hexafluoride (SF 6 ) The fluorine content in the sulfur hexafluoride is large, resulting in sulfur hexafluoride (SF 6 ) The method has a larger isotropy effect when the substrate is etched, so that larger transverse etching loss is formed on the side wall of the substrate, which is positioned at the top of the groove, and further the problems of electric leakage and the like of the semiconductor device manufactured by the traditional groove etching method are caused.
Through intensive research, the inventor of the application designs a groove forming method, which can anisotropically etch a substrate to form a groove, reduce the transverse etching loss of the side wall of the top of the groove on the substrate and avoid the problems of electric leakage and the like of a semiconductor device manufactured by the groove forming method.
Fig. 1 shows a schematic flow chart of a trench forming method in an embodiment of the present application, and fig. 2 (a) -2 (d) show schematic process diagrams of preparing a trench structure by using the trench forming method in an embodiment of the present application.
Referring to fig. 1 and 2, a trench forming method according to an embodiment of the present application includes the following steps:
s110, providing a substrate 210.
S120, anisotropically etching the substrate 210 to form a trench 220.
The etching agent for anisotropic etching includes a first etching gas and a second etching gas, the second etching gas includes an oxygen-containing gas, the flow of the oxygen-containing gas is a, the total flow of the etching agent is B, a/b=c, and C is a first preset value, it can be seen that the ratio of the flow of the oxygen-containing gas to the total flow of the etching agent is the first preset value, the groove depth of the combined groove 220 is H, the groove width of the groove 220 is W, the groove width of the groove 220 is the radial dimension of the groove 220 along the groove 220, the groove depth of the groove 220 is the dimension of the groove 220 in the depth direction of the groove 220, and W is smaller than H. It can be understood that, in the process of anisotropically etching the substrate 210, since the flow of the oxygen-containing gas is large enough, the deposition speed of the oxide layer 230 on the sidewall of the trench 220 is approximately equal to the etching speed of the oxide layer 230 on the sidewall of the trench 220, so that the lateral etching loss of the sidewall of the trench 220 (i.e., the etching loss of the sidewall of the trench 220 in the radial direction of the trench 220) is smaller, and the lateral etching loss is smaller than the longitudinal etching loss of the wall of the trench 220 (i.e., the etching loss of the wall of the trench 220 in the depth direction of the trench 220), and finally, the trench 220 (as shown in fig. 2 (d)) with the width W smaller than the depth H of the trench can be formed, so that the lateral etching loss of the sidewall of the substrate 210 at the top of the trench 220 can be reduced, and the problem of leakage and the like of the semiconductor device manufactured by using the trench forming method can be avoided.
It should be noted that, in the process of anisotropically etching the substrate 210 to form the trench 220, an oxide layer 230 is deposited on the wall of the trench 220 by using an oxygen-containing gas, a part of the deposited oxide layer 230, such as the oxide layer 230 located on the bottom wall of the trench 220, may be etched away in the anisotropically etching, while the oxide layer 230 on the sidewall of the trench 220 is not directly impacted by the etchant and remains (as shown in fig. 2 (b)), so that the contact between the sidewall of the trench 220 and the etchant is blocked, and the deposition speed of the oxide layer 230 on the sidewall of the trench 220 is approximately equal to the etching speed of the oxide layer 230 on the sidewall of the trench 220, so that the substrate 210 can be anisotropically etched to form the trench 220, and the lateral etching loss of the sidewall of the trench 220 is also enabled to be smaller, thereby avoiding the problems such as leakage of the semiconductor device manufactured by the trench forming method.
In some embodiments, the H/W is a second preset value, that is, the aspect ratio of the trench 220 is the second preset value, the lateral etching loss of the sidewall of the trench 220 can be controlled within a suitable range, and the lateral etching loss of the substrate 210 at the sidewall of the top of the trench 220 can be better reduced, so as to better avoid the problems of leakage and the like of the semiconductor device manufactured by using the trench forming method.
In some embodiments, the first preset value is 40% -60%.
If the first preset value is too small, that is, the flow of the oxygen-containing gas is too small, the deposition speed of the oxide layer 230 on the sidewall of the trench 220 is too small, so that the lateral etching loss of the sidewall of the trench 220 is too large; if the first preset value is too large, the longitudinal etching of the wall of the trench 220 is affected; therefore, the first preset value needs to be set within a proper range, for example, the first preset value is set to 40% -60%, so that the deposition speed of the oxide layer 230 on the side wall of the trench 220 is approximately equal to the etching speed of the oxide layer 230 on the side wall of the trench 220, and the longitudinal etching of the wall of the trench 220 can be ensured, further, the lateral etching loss of the side wall of the trench 220 is smaller than the longitudinal etching loss of the wall of the trench 220, the lateral etching loss of the substrate 210 on the side wall at the top of the trench 220 can be reduced, and the problems of leakage and the like of the semiconductor device manufactured by the trench forming method are avoided.
In some embodiments, the oxygen-containing gas comprises oxygen.
The oxide layer 230 can be well deposited on the sidewalls of the trench 220 using oxygen, such as forming silicon dioxide, so that the deposition rate of the oxide layer 230 on the sidewalls of the trench 220 is approximately equal to the etching rate of the oxide layer 230 on the sidewalls of the trench 220, to protect the sidewalls of the trench 220 using the deposited silicon dioxide, and to reduce lateral etching loss on the substrate 210 at the sidewalls at the top of the trench 220.
In some embodiments, the first etching gas comprises a fluorine-containing gas. The fluorine-containing gas may be sulfur hexafluoride (SF) 6 ) Since the fluorine-containing gas contains fluorine, the etching agent for anisotropic etching has better etching effect when etching the substrate 210, and is more favorable for forming the trench 220.
In some embodiments, the ratio of the flow of the first etching gas to the total flow of the etchant is D, D is 1-C, and C is 40% -60%.
If the flow of the first etching gas is too small, the deposition speed of the oxide layer 230 on the wall of the trench 220 is greater than the etching speed of the oxide layer 230 on the wall of the trench 220 in the depth direction of the trench 220, so as to affect the longitudinal etching loss of the wall of the trench 220, and if the flow of the first etching gas is too large, the lateral etching loss of the sidewall of the trench 220 is too large. For this reason, the D needs to be set in a suitable range, on the one hand, the first etching gas maintains a certain concentration, prevents the longitudinal etching from stopping, and can ensure the longitudinal etching loss of the groove wall of the groove 220, and on the other hand, the lateral etching loss of the side wall of the groove 220 cannot be too large.
In some embodiments, referring to fig. 2 (a) and fig. 2 (b), referring to fig. 3 in combination, the step S120 of anisotropically etching the substrate 210 to form the trench 220 specifically includes:
s121, forming a protection pattern layer 240 on the substrate 210, where the protection pattern layer 240 may be a patterned mask layer, and the protection pattern layer 240 may be formed by Plasma Enhanced Chemical Vapor Deposition (PECVD), photolithography, and other processes.
S122, anisotropically etching the portion of the substrate 210 not covered by the protection pattern layer 240 to form a trench 220.
The protective pattern layer 240 may be used to form a pattern region on the substrate 210 that substantially corresponds to the trench 220, such that the corresponding trench 220 may be formed according to design requirements.
In this embodiment, referring to fig. 2 (c) and fig. 2 (d), after step S120 of anisotropically etching the substrate 210 to form the trench 220, the trench forming method further includes:
the protective pattern layer 240 is removed. The protective pattern layer 240 may be removed using a wet etching process, for example, hydrofluoric acid (HF acid) may be used to remove the protective pattern layer 240.
In some embodiments, the step S120 of anisotropically etching the substrate 210 to form the trench 220 specifically includes:
the substrate 210 is anisotropically etched using a reactive ion etching process to form trenches 220.
The anisotropic etching effect is better, the oxygen-containing gas with proper flow is favorable for forming an oxide layer 230 on the side wall of the groove 220, for the bottom of the groove 220, under the acceleration ion bombardment effect of the first etching gas and the second etching gas, the oxide layer 230 deposited on the bottom of the groove 220 is removed, so that the bottom etching of the groove 220 is smoothly carried out, the side wall of the groove 220 is only influenced by ion scattering, the oxide layer 230 deposited on the side wall of the groove 220 cannot be cleaned, the etching loss of the side wall of the groove 220 is smaller, the transverse etching loss of the side wall of the groove 220 is smaller than the longitudinal etching loss of the wall of the groove 220, the transverse etching loss of the substrate 210 at the side wall of the top of the groove 220 is favorable for reducing, and the problems of electric leakage and the like of a semiconductor device manufactured by the groove forming method are avoided.
In some embodiments, the process conditions of step S120 of anisotropically etching the substrate 210 to form the trenches 220 include: the power is 500W-700W, the initial etching pressure is 40-50 mtorr, and the etching temperature is 10-15 ℃.
This arrangement is advantageous for improving the effect of anisotropic etching to form the corresponding trench 220.
In some embodiments, referring to fig. 4, the step S120 of anisotropically etching the substrate 210 to form the trench 220 specifically includes:
s123, performing anisotropic etching on the substrate 210 for a preset etching time by adopting the first etching gas and the second etching gas with the first flow rate ratio.
And S124, etching the substrate 210 by using the first etching gas and the second etching gas with the second flow rate ratio to form the groove 220.
Wherein the first flow rate duty cycle is greater than the second flow rate duty cycle.
The substrate 210 is etched anisotropically for a preset etching time by using an oxygen-containing gas with a first flow rate ratio, and then the substrate 210 is etched by using a second etching gas with a second flow rate ratio to form the trench 220, and the first flow rate ratio is larger than the second flow rate ratio.
In some embodiments, the first flow rate is 50% -60%, the second flow rate is 40% -50%, and the second flow rate is smaller than the first flow rate, so that the lateral etching loss of the substrate 210 at the side wall of the top of the trench 220 can be effectively reduced, and the problems of electric leakage and the like of the semiconductor device manufactured by the trench forming method are avoided.
In some embodiments, initially, the total flow of etchant for the anisotropic etch is 160sccm, the flow of the first etching gas is 64sccm, and the flow of the second etching gas is 96sccm; after the etching time is preset, the total flow of the etching agent for anisotropic etching is 160sccm, the flow of the first etching gas is 90sccm, and the flow of the second etching gas is 70sccm.
In some embodiments, the preset etching time is 5s-10s, for example, the preset etching time may be selected to be 7s.
The preset etching time is long enough, so that an oxide layer 230 is formed on the side wall of the groove 220 in a depositing manner, the side wall of the groove 220 can be better protected by utilizing the oxide layer 230, further, the transverse etching loss of the substrate 210 at the side wall of the top of the groove 220 is reduced, and the problems of electric leakage and the like of a semiconductor device manufactured by utilizing the groove forming method are avoided.
In some embodiments, a method for forming a trench according to an embodiment of the present application includes the following steps:
s110, providing a substrate 210.
S120, anisotropically etching the substrate 210 to form a trench 220.
Wherein the etching agent for anisotropic etching comprises a first etching agentAn etching gas and a second etching gas, the first etching gas including sulfur hexafluoride (SF 6 ) The second etching gas comprises oxygen, the flow of the oxygen is A, the total flow of the etchant is B, A/B=C, C is a first preset value, C is 40% -60%, the ratio of the flow of the first etching gas to the total flow of the etchant is D, and D is 1-C. On the one hand, the first etching gas maintains a certain concentration, prevents the longitudinal etching from stopping, can ensure the longitudinal etching loss of the groove wall of the groove 220, on the other hand, can not cause excessive lateral etching loss of the side wall of the groove 220, can reduce the lateral etching loss of the side wall of the substrate 210, which is positioned at the top of the groove 220, and can avoid the problems of electric leakage and the like of the semiconductor device manufactured by the groove forming method.
Referring to fig. 2 (d), an embodiment of the present application further discloses a trench structure, which is manufactured by the above-mentioned trench forming method, and the trench structure includes a substrate 210 and a trench 220 formed on the substrate 210.
In other embodiments, referring to fig. 5, the trench structure includes a substrate 210 and a plurality of trenches 220 formed on the substrate 210, and a required number of trenches 220 can be formed on the substrate 210 according to the design requirements of the semiconductor device to meet the design requirements.
The embodiment of the application also discloses a semiconductor device, which comprises the groove structure, so that the possibility of electric leakage of the semiconductor device can be effectively reduced.
It should be understood that, although the steps in the flowcharts in the above embodiments are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described above may include a plurality of sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, and the order of execution of the sub-steps or stages is not necessarily sequential, but may be performed alternately or alternately with at least a part of the sub-steps or stages of other steps or other steps. It should be noted that the above-described different embodiments may be combined with each other.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.

Claims (10)

1. A method of forming a trench, comprising:
providing a substrate;
anisotropically etching the substrate to form a groove;
the etching agent for anisotropic etching comprises a first etching gas and a second etching gas, wherein the second etching gas comprises an oxygen-containing gas, the flow of the oxygen-containing gas is A, the total flow of the etching agent is B, A/B=C, and C is a first preset value;
the depth of the groove is H, the width of the groove is W, and the width of the groove refers to the radial dimension of the notch of the groove along the groove, wherein W is smaller than H.
2. The trench forming method according to claim 1, wherein the first preset value is 40% -60%.
3. The trench forming method according to claim 1, wherein the oxygen-containing gas includes oxygen.
4. A trench forming method according to any one of claims 1 to 3, wherein the first etching gas comprises a fluorine-containing gas.
5. A method of forming a trench as claimed in any one of claims 1 to 3 wherein anisotropically etching the substrate to form a trench comprises:
and anisotropically etching the substrate by adopting a reactive ion etching process to form the groove.
6. The method of claim 5, wherein the process conditions for anisotropically etching the substrate to form a trench comprise: the power is 500W-700W, the initial etching pressure is 40-50 mtorr, and the etching temperature is 10-15 ℃.
7. A method of forming a trench as claimed in any one of claims 1 to 3 wherein anisotropically etching the substrate to form a trench comprises:
anisotropically etching the substrate for a preset etching time by adopting the first etching gas and the second etching gas with a first flow rate ratio;
etching the substrate by using the first etching gas and the second etching gas with the second flow rate ratio to form the groove;
wherein the first flow rate duty cycle is greater than the second flow rate duty cycle.
8. The trench forming method according to claim 7, wherein the preset etching time is 5s to 10s.
9. A trench structure, characterized in that it is produced by the trench forming method according to any one of claims 1 to 8, comprising:
a substrate; and
and the groove is formed on the substrate.
10. A semiconductor device comprising the trench structure of claim 9.
CN202310011589.4A 2023-01-05 2023-01-05 Trench forming method, trench structure and semiconductor device Pending CN116072600A (en)

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Application Number Priority Date Filing Date Title
CN202310011589.4A CN116072600A (en) 2023-01-05 2023-01-05 Trench forming method, trench structure and semiconductor device

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