CN116061085A - Polishing pad beneficial to heat dissipation - Google Patents

Polishing pad beneficial to heat dissipation Download PDF

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Publication number
CN116061085A
CN116061085A CN202310109494.6A CN202310109494A CN116061085A CN 116061085 A CN116061085 A CN 116061085A CN 202310109494 A CN202310109494 A CN 202310109494A CN 116061085 A CN116061085 A CN 116061085A
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CN
China
Prior art keywords
polishing
grooves
polishing pad
ventilation holes
distance
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Pending
Application number
CN202310109494.6A
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Chinese (zh)
Inventor
杨波
张莉娟
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Shanghai Xinqian Integrated Circuit Co ltd
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Shanghai Xinqian Integrated Circuit Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shanghai Xinqian Integrated Circuit Co ltd filed Critical Shanghai Xinqian Integrated Circuit Co ltd
Priority to CN202310109494.6A priority Critical patent/CN116061085A/en
Publication of CN116061085A publication Critical patent/CN116061085A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a polishing pad beneficial to heat dissipation, wherein a polishing surface used for contacting with a device is arranged on the polishing pad, a plurality of air holes are formed in the polishing surface, and the plurality of air holes are distributed on the whole polishing surface; the polishing surface is provided with a plurality of first grooves and a plurality of second grooves, the first grooves are sequentially arranged in parallel along a first direction, the second grooves are sequentially arranged in parallel along a second direction, the first direction and the second direction form included angles, and the polishing surface is divided into a plurality of diamond-shaped polishing parts by the first grooves and the second grooves. Compared with the prior art, the air holes can be used for assisting the grooves to improve the polishing effect by storing the polishing liquid, and the grooves can be used for improving the heat dissipation effect by promoting the circulation of the polishing liquid, so that the air holes and the grooves are simultaneously arranged on the polishing surface, the polishing effect of the polishing pad is improved, and the heat dissipation effect of the polishing pad is improved.

Description

Polishing pad beneficial to heat dissipation
Technical Field
The invention relates to polishing equipment, in particular to a polishing pad beneficial to heat dissipation.
Background
CMP (Chemical Mechanical Polishing), chemical mechanical polishing, is a polishing technique that combines the mechanical grinding of abrasive particles with chemical etching of the polishing fluid in order to overcome the disadvantages of chemical polishing and mechanical polishing. The greatest advantage of chemical mechanical polishing is that the nano-scale global planarization of the processing surface can be realized, and the ultra-precise nondestructive surface processing with the characteristic dimension of the integrated circuit below 0.35 mu m is satisfied. Semiconductor devices generally require a flatness on the order of nanometers, with the best process currently being a combination of polishing solutions (chemical) and polishing pads (mechanical). In addition to application to integrated circuit chips, CMP is also commonly used in the processing of discrete devices and electronic components of semiconductors, and is also expanding to the surface processing fields of thin film memory disks, ceramics, sapphire, and the like.
The polishing pad has a rough surface for directly contacting with the semiconductor device to generate friction, mechanically removing the polishing layer on the semiconductor surface, uniformly throwing the polishing liquid onto the surface of the polishing pad under the action of centrifugal force, chemically removing the polishing layer on the semiconductor surface, and simultaneously carrying the reaction product out of the polishing pad. However, if a large amount of frictional heat is accumulated between the polishing pad and the semiconductor device during polishing, the surface temperature of the semiconductor device is increased, thereby affecting the surface flatness of the semiconductor device.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a polishing pad which is favorable for heat dissipation and is used for discharging friction heat between the polishing pad and a semiconductor device so as to improve the polishing effect.
The aim of the invention can be achieved by the following technical scheme:
the polishing pad is provided with a polishing surface for contacting with a device, the polishing surface is provided with a plurality of ventilation holes, and the ventilation holes are distributed on the whole polishing surface;
the polishing surface is provided with a plurality of first grooves and a plurality of second grooves, the first grooves are sequentially arranged in parallel along a first direction, the second grooves are sequentially arranged in parallel along a second direction, the first direction and the second direction are arranged at an included angle, and the first grooves and the second grooves divide the polishing surface into a plurality of diamond polishing parts.
In one embodiment, the polishing pad comprises a polishing layer, the polishing surface is arranged on the polishing layer, and the depth of the air holes is h 1 The thickness of the polishing layer is h 2 And satisfies:0.95h 2 ≤h 1 ≤h 2 。
in one embodiment, the polishing layer has a thickness that satisfies: h is less than or equal to 1mm 2 ≤4mm。
In one embodiment, the depth of the first groove is h 3 The depth of the second groove is h 4 And satisfies: 0.25h 2 ≤h 3 ≤0.5h 2 And/or 0.25h 2 ≤h 4 ≤0.5h 2 。
In one embodiment, the ventilation holes comprise ventilation round holes, and the diameter of the ventilation holes is 1.5 mm-5 mm.
In one embodiment, the plurality of ventilation holes are distributed in concentric circles around the center of the polishing pad, the distance between the axes of the plurality of ventilation holes on the same circumference is 5 mm-10 mm, and the distance between two adjacent concentric circles is 5 mm-10 mm;
in one embodiment, the ventilation holes are uniformly distributed along a third direction to form ventilation hole arrays, the ventilation hole arrays are uniformly distributed along a fourth direction to form ventilation hole arrays, the third direction and the fourth direction form an included angle, the distance between the axes of two adjacent ventilation holes in the third direction is 5 mm-10 mm, and the distance between the axes of two adjacent ventilation holes in the fourth direction is 5 mm-10 mm.
In one embodiment, the first groove and the second groove are elongated grooves, the width of the first groove is 1 mm-4 mm, and the width of the second groove is 1 mm-4 mm.
In one embodiment, the width of the first trench is equal to the width of the second trench.
In one embodiment, the distance between two adjacent first grooves in the first direction is 5 mm-50 mm, and the distance between two adjacent second grooves in the second direction is 5 mm-50 mm;
the first direction is perpendicular to the second direction, the distance between two adjacent first grooves is equal to the distance between two adjacent second grooves, and the diamond polishing part is a square polishing part.
Compared with the prior art, the invention has the following advantages:
1. according to the polishing device, the ventilation holes, the first grooves and the second grooves are formed in the polishing surface at the same time, and in the polishing process, the diamond-shaped polishing part of the polishing pad is in direct contact friction with the semiconductor device, so that the surface of the semiconductor device is polished and polished, and the surface of the semiconductor device is flattened. The air holes are used for promoting heat exchange between the polishing surface and the outside, diffusing frictional heat generated by polishing, avoiding continuous rising of the temperature of the polishing surface, storing polishing liquid in the first groove and the second groove, enabling waste residues generated by polishing to flow out of the surface of the device through the first groove and the second groove, realizing cyclic updating of the polishing liquid, carrying away part of frictional heat through cyclic updating of the polishing liquid, further reducing the temperature of the polishing surface, and effectively avoiding the influence of overhigh temperature on the polishing effect. Meanwhile, the ventilation holes can assist the grooves to improve the polishing effect by storing the polishing liquid, and the grooves can improve the heat dissipation effect by promoting the circulation of the polishing liquid, so that the ventilation holes and the grooves are simultaneously arranged on the polishing surface, the polishing effect of the polishing pad is improved, and the heat dissipation effect of the polishing pad is improved.
2. The depth of the ventilation holes is more than or equal to 95% of the thickness of the polishing layer, and even the ventilation holes penetrate through the polishing layer, so that the heat dissipation effect of the ventilation holes is improved, the polishing surface can exchange heat with the outside through the ventilation holes, and the heat dissipation effect of the polishing pad is further improved.
3. The depth of the first groove and the second groove is less than or equal to 50% of the thickness of the polishing pad, so that the influence of overlarge depth of the first groove and the second groove on the overall strength of the polishing pad is avoided, the mechanical property of the polishing pad is improved, and the service life of the polishing pad is further guaranteed.
4. The plurality of ventilation holes distributed in concentric circles enable the polishing surface to be provided with heat dissipation channels for heat exchange with the outside at certain intervals, and uniformity of heat dissipation effect of the polishing pad is improved.
5. The plurality of air holes distributed in the array form enable the heat dissipation channels on the polishing surface to be evenly distributed, namely the heat dissipation channels are evenly distributed on the surface of the device, so that the uniformity of the surface temperature of the device is guaranteed, and the uniformity of the polishing effect of the device is guaranteed.
Drawings
FIG. 1 is a schematic view of the structure of a polishing pad according to the present invention.
Fig. 2 is a top view of a polishing pad of the present invention.
FIG. 3 is a cross-sectional view of the polishing pad of the present invention at A-A in FIG. 2.
Fig. 4 is a cross-sectional view of a polishing pad of the present invention at B-B in fig. 2.
Description of the drawings: 100. a polishing pad; 10. a polishing layer; 11. ventilation holes; 12. a first trench; 13. a second trench; 14. a diamond-shaped polishing portion; 20. an adhesive layer; 30. a buffer layer; 40. and (5) a back adhesive layer.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
A polishing pad 100 that facilitates heat dissipation in accordance with embodiments is described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to 4, in one embodiment, there is provided a polishing pad 100, wherein a polishing surface for contacting with a device is provided on the polishing pad 100, a plurality of ventilation holes 11 are provided on the polishing surface, and the plurality of ventilation holes 11 are distributed throughout the polishing surface;
the polishing surface is provided with a plurality of first grooves 12 and a plurality of second grooves 13, the plurality of first grooves 12 are arranged in parallel in the first direction, the plurality of second grooves 13 are arranged in parallel in the second direction, the first direction and the second direction form an included angle, and the polishing surface is divided into a plurality of diamond-shaped polishing parts 14 by the first grooves 12 and the second grooves 13.
In the invention, the ventilation holes 11, the first grooves 12 and the second grooves 13 are simultaneously arranged on the polishing surface, and the diamond-shaped polishing part 14 of the polishing pad 100 is in direct contact friction with the device in the polishing process, so that the surface of the semiconductor device is polished and polished, and the surface of the device is flattened. The air holes 11 are used for promoting heat exchange between the polished surface and the outside, diffusing frictional heat generated by polishing, avoiding continuous rising of the temperature of the polished surface, the polishing liquid can be stored in the first groove 12 and the second groove 13, waste residues generated by polishing can flow out of the surface of the device through the first groove 12 and the second groove 13, circulation updating of the polishing liquid is realized, partial frictional heat is taken away through circulation updating of the polishing liquid, the temperature of the polished surface is further reduced, and the effect of polishing due to overhigh temperature is effectively avoided. Meanwhile, the ventilation holes 11 can assist the grooves to improve the polishing effect by storing the polishing liquid, and the grooves can improve the heat dissipation effect by promoting the circulation of the polishing liquid, so that the ventilation holes and the grooves are simultaneously arranged on the polishing surface, thereby improving the polishing effect of the polishing pad 100 and improving the heat dissipation effect of the polishing pad 100.
Specifically, as shown in fig. 1 and 4, in one embodiment, the polishing pad 100 includes a polishing layer 10, a polishing surface is provided on the polishing layer 10, and the ventilation holes 11 have a depth h 1 The polishing layer 10 has a thickness h 2 And satisfies: 0.95h 2 ≤h 1 ≤h 2 . The polishing pad 100 is provided with the ventilation holes 11 with the depth greater than or equal to 95% of the thickness of the polishing layer 10, and even the ventilation holes 11 penetrate through the polishing layer 10, so that the polishing surface can exchange heat with the outside through the ventilation holes 11, and the heat dissipation effect of the polishing pad 100 is further improved.
Further, in one embodiment, the plurality of ventilation holes 11 are concentrically distributed around the center of the polishing pad 100, and the distance between the axes of the plurality of ventilation holes 11 on the same circumference is 5mm to 10mm, and the distance between two adjacent concentric circles is 5mm to 10mm. The plurality of ventilation holes 11 distributed in concentric circles enable the polishing surface to be provided with heat dissipation channels for heat exchange with the outside at certain intervals, and uniformity of heat dissipation effect of the polishing pad is improved.
Alternatively, referring to FIGS. 2 and 4, in one embodimentThe ventilation holes 11 are uniformly distributed along the third direction to form ventilation hole arrays, the ventilation hole arrays are uniformly distributed along the fourth direction to form ventilation hole arrays, the third direction and the fourth direction form an included angle, and the axes of two adjacent ventilation holes 11 are at a distance d in the third direction 1 The distance between the axes of two adjacent ventilation holes 11 in the fourth direction is 5 mm-10 mm. In this embodiment, the third direction is parallel to the first direction, the fourth direction is parallel to the second direction, and the distance between the axes of the two adjacent ventilation holes 11 in the third direction is equal to the distance between the axes of the two adjacent ventilation holes 11 in the fourth direction. The plurality of air holes 11 distributed in an array form enable the heat dissipation channels on the polishing surface to be evenly distributed, namely the heat dissipation channels are evenly distributed on the surface of the device, so that the uniformity of the surface temperature of the device is guaranteed, and the uniformity of the polishing effect of the device is guaranteed.
Wherein the ventilation holes 11 comprise ventilation round holes, and the diameter of the ventilation holes 11 is 1.5 mm-5 mm. It is to be understood that the ventilation holes 11 may be holes of other shapes such as prismatic holes, so long as the polished surface can exchange heat with the outside, and the shape of the ventilation holes 11 is not limited herein.
Specifically, as shown in FIG. 3, in one embodiment, the first trench 12 has a depth h 3 The depth of the second groove 13 is h 4 And satisfies: 0.25h 2 ≤h 3 ≤0.5h 2 And/or 0.25h 2 ≤h 4 ≤0.5h 2 . The polishing pad 100 is provided with the first grooves 12 and the second grooves 13 with the depth less than or equal to 50% of the thickness of the polishing pad 100, so that the influence of excessive depth of the first grooves 12 and the second grooves 13 on the overall strength of the polishing pad 100 is avoided, the mechanical property of the polishing pad 100 is improved, and the service life of the polishing pad 100 is further ensured.
Specifically, as shown in fig. 2 and 3, in an embodiment, the first groove 12 and the second groove 13 are elongated grooves, the width of the first groove 12 is 1mm to 4mm, and the width of the second groove 13 is 1mm to 4mm.
Further, in an embodiment, the width of the first trench 12 is equal to the width of the second trench 13. The polishing pad 100 has the advantages that the width of the first groove 12 is equal to that of the second groove 13, the flowing speed of the polishing solution in the first groove 12 is ensured to be the same as that of the polishing solution in the second groove 13, and the updating speed of the polishing solution is the same, so that the cooling effect is achieved, and the local overheating of the polishing pad 100 is avoided.
Specifically, as shown in fig. 2 and 3, in one embodiment, the distance d between two adjacent first grooves 12 in the first direction 2 The distance between two adjacent second grooves 13 in the second direction is 5mm to 50mm.
In this embodiment, the first direction is perpendicular to the second direction, the distance between two adjacent first grooves 12 is equal to the distance between two adjacent second grooves 13, and the diamond-shaped polishing portion 14 is a square polishing portion. Square polishing pads are used to ensure polishing reliability.
Specifically, as shown in fig. 1, in an embodiment, the polishing pad 100 includes a polishing layer 10, a buffer layer 30, and a backing layer 40 sequentially disposed, where the polishing layer 10 and the buffer layer 30 are connected by an adhesive layer 20, and the backing layer 40 is used to adhesively mount the polishing pad 100 to a polishing apparatus, and a polishing surface is disposed on a surface of the polishing layer 10 away from the buffer layer 30.
Wherein the thickness of the polishing layer 10 satisfies: h is less than or equal to 1mm 2 The thickness of the buffer layer 30 is 0.5mm to 2.0mm, the thickness of the adhesive layer 20 is 0.1mm to 0.2mm, the thickness of the backing layer 40 is 0.5mm to 2.0mm, and the diameter of the polishing pad 100 is 500mm to 900mm.
Further, in one embodiment, the polishing layer 10 comprises a polyurethane polishing layer prepared from an isocyanate-terminated prepolymer, a curing agent, and hollow microspheres, and the buffer layer 30 comprises a polyurethane-impregnated nonwoven fabric.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (10)

1. The polishing pad is beneficial to heat dissipation and is characterized in that a polishing surface used for being in contact with a device is arranged on the polishing pad (100), a plurality of ventilation holes (11) are formed in the polishing surface, and the ventilation holes (11) are distributed on the whole polishing surface;
the polishing surface is provided with a plurality of first grooves (12) and a plurality of second grooves (13), the first grooves (12) are sequentially arranged in parallel along a first direction, the second grooves (13) are sequentially arranged in parallel along a second direction, the first direction and the second direction are arranged at an included angle, and the polishing surface is divided into a plurality of diamond-shaped polishing parts (14) by the first grooves (12) and the second grooves (13).
2. A polishing pad according to claim 1, wherein the polishing pad (100) comprises a polishing layer (10), the polishing surface being provided withOn the polishing layer (10), the depth of the ventilation holes (11) is h 1 The polishing layer (10) has a thickness h 2 And satisfies: 0.95h 2 ≤h 1 ≤h 2 。
3. A polishing pad according to claim 2, wherein the thickness of the polishing layer (10) satisfies: h is less than or equal to 1mm 2 ≤4mm。
4. A heat spreading polishing pad according to claim 2, wherein the first grooves (12) have a depth h 3 The depth of the second groove (13) is h 4 And satisfies: 0.25h 2 ≤h 3 ≤0.5h 2 And/or 0.25h 2 ≤h 4 ≤0.5h 2 。
5. A polishing pad according to any one of claims 1 to 4, wherein said ventilation holes (11) comprise ventilation circular holes, and the diameter of said ventilation holes (11) is 1.5mm to 5mm.
6. A polishing pad for facilitating heat dissipation according to any one of claims 1 to 4, wherein a plurality of the ventilation holes (11) are concentrically arranged around the center of the polishing pad (100), the distance between the axes of the ventilation holes (11) on the same circumference is 5mm to 10mm, and the distance between two adjacent concentric circles is 5mm to 10mm.
7. The polishing pad for facilitating heat dissipation according to any one of claims 1 to 4, wherein a plurality of ventilation holes (11) are uniformly distributed along a third direction to form ventilation hole arrays, a plurality of ventilation hole arrays are uniformly distributed along a fourth direction to form ventilation hole arrays, the third direction and the fourth direction form an included angle, the distance between the axes of two adjacent ventilation holes (11) in the third direction is 5mm to 10mm, and the distance between the axes of two adjacent ventilation holes (11) in the fourth direction is 5mm to 10mm.
8. A polishing pad according to claim 1, wherein the first grooves (12) and the second grooves (13) are elongated grooves, the width of the first grooves (12) is 1 mm-4 mm, and the width of the second grooves (13) is 1 mm-4 mm.
9. A polishing pad according to claim 8, wherein the width of said first grooves (12) is equal to the width of said second grooves (13).
10. A polishing pad for facilitating heat dissipation according to claim 1, wherein a distance between two adjacent first grooves (12) in the first direction is 5mm to 50mm, and a distance between two adjacent second grooves (13) in the second direction is 5mm to 50mm;
the first direction is perpendicular to the second direction, the distance between two adjacent first grooves (12) is equal to the distance between two adjacent second grooves (13), and the diamond polishing parts (14) are square polishing parts.
CN202310109494.6A 2023-02-13 2023-02-13 Polishing pad beneficial to heat dissipation Pending CN116061085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310109494.6A CN116061085A (en) 2023-02-13 2023-02-13 Polishing pad beneficial to heat dissipation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310109494.6A CN116061085A (en) 2023-02-13 2023-02-13 Polishing pad beneficial to heat dissipation

Publications (1)

Publication Number Publication Date
CN116061085A true CN116061085A (en) 2023-05-05

Family

ID=86171325

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310109494.6A Pending CN116061085A (en) 2023-02-13 2023-02-13 Polishing pad beneficial to heat dissipation

Country Status (1)

Country Link
CN (1) CN116061085A (en)

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