CN116057947B - 成像装置和成像方法 - Google Patents

成像装置和成像方法

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Publication number
CN116057947B
CN116057947B CN202180045530.6A CN202180045530A CN116057947B CN 116057947 B CN116057947 B CN 116057947B CN 202180045530 A CN202180045530 A CN 202180045530A CN 116057947 B CN116057947 B CN 116057947B
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CN
China
Prior art keywords
time code
signal
holding circuit
held
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180045530.6A
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English (en)
Chinese (zh)
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CN116057947A (zh
Inventor
北野伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116057947A publication Critical patent/CN116057947A/zh
Application granted granted Critical
Publication of CN116057947B publication Critical patent/CN116057947B/zh
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/768—Addressed sensors, e.g. MOS or CMOS sensors for time delay and integration [TDI]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H04N25/534—Control of the integration time by using differing integration times for different sensor regions depending on the spectral component
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180045530.6A 2020-07-02 2021-06-22 成像装置和成像方法 Active CN116057947B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020114996 2020-07-02
JP2020-114996 2020-07-02
PCT/JP2021/023684 WO2022004502A1 (ja) 2020-07-02 2021-06-22 撮像装置及び撮像方法

Publications (2)

Publication Number Publication Date
CN116057947A CN116057947A (zh) 2023-05-02
CN116057947B true CN116057947B (zh) 2025-11-25

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CN202180045530.6A Active CN116057947B (zh) 2020-07-02 2021-06-22 成像装置和成像方法

Country Status (4)

Country Link
US (1) US12244951B2 (cg-RX-API-DMAC7.html)
JP (1) JPWO2022004502A1 (cg-RX-API-DMAC7.html)
CN (1) CN116057947B (cg-RX-API-DMAC7.html)
WO (1) WO2022004502A1 (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7602890B2 (ja) * 2020-10-23 2024-12-19 キヤノン株式会社 半導体装置
JP7755407B2 (ja) * 2021-08-04 2025-10-16 キヤノン株式会社 光電変換装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109565559A (zh) * 2016-08-22 2019-04-02 索尼半导体解决方案公司 固态摄像装置、用于驱动固态摄像装置的方法和电子设备
WO2019239722A1 (ja) * 2018-06-12 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

Family Cites Families (12)

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JP3206010B2 (ja) * 1991-02-01 2001-09-04 安藤電気株式会社 タイムスタンプ回路
JP4882999B2 (ja) * 2007-12-21 2012-02-22 ソニー株式会社 画像処理装置、画像処理方法、プログラム、および学習装置
JP6415572B2 (ja) 2013-09-16 2018-10-31 クロノカム 動的な、単一光ダイオードの画素回路およびその作動方法
US9986179B2 (en) 2014-09-30 2018-05-29 Qualcomm Incorporated Sensor architecture using frame-based and event-based hybrid scheme
JP6760258B2 (ja) * 2015-02-23 2020-09-23 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、比較器の制御方法、およびデータ転送回路
JP2019057873A (ja) * 2017-09-22 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子機器
JP7129234B2 (ja) * 2018-06-15 2022-09-01 キヤノン株式会社 撮像装置、撮像システム、および撮像装置の制御方法
JP2020048066A (ja) * 2018-09-19 2020-03-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、及び、固体撮像素子の制御方法
JP2020088425A (ja) * 2018-11-16 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2020096347A (ja) * 2018-11-29 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2020088724A (ja) * 2018-11-29 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
TWI896902B (zh) * 2021-09-08 2025-09-11 日商佳能股份有限公司 光電轉換裝置、計算電路、光電轉換系統和移動體

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109565559A (zh) * 2016-08-22 2019-04-02 索尼半导体解决方案公司 固态摄像装置、用于驱动固态摄像装置的方法和电子设备
WO2019239722A1 (ja) * 2018-06-12 2019-12-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

Also Published As

Publication number Publication date
US20230247323A1 (en) 2023-08-03
CN116057947A (zh) 2023-05-02
WO2022004502A1 (ja) 2022-01-06
JPWO2022004502A1 (cg-RX-API-DMAC7.html) 2022-01-06
US12244951B2 (en) 2025-03-04

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