CN116043325A - Thin film deposition device and thin film deposition method - Google Patents
Thin film deposition device and thin film deposition method Download PDFInfo
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- CN116043325A CN116043325A CN202310295674.8A CN202310295674A CN116043325A CN 116043325 A CN116043325 A CN 116043325A CN 202310295674 A CN202310295674 A CN 202310295674A CN 116043325 A CN116043325 A CN 116043325A
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
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Abstract
The application discloses a thin film deposition device and a thin film deposition method, wherein the thin film deposition device comprises a deposition chamber, and a target bracket and a substrate table which are arranged in the deposition chamber and are opposite to each other, wherein the target bracket is used for bearing a target required by depositing a target thin film, the substrate table is used for bearing a substrate of the target thin film to be deposited, and after a preset voltage is applied between the target and the substrate, argon introduced into the deposition chamber is ionized into plasma, so that the target on the target bracket is bombarded, and the target is deposited on the substrate to form the target thin film; meanwhile, an electron gun is arranged on the side wall of the deposition chamber, and the muzzle of the electron gun points to the surface of the substrate table and is obliquely opposite to the surface of the substrate table, so that after the target film covers the substrate, electron beams are emitted to the target film deposited on the substrate, crystal grains with preset crystal orientation in the target film are reduced or eliminated, and the crystal orientation in the target film tends to be consistent, so that the high-quality monocrystalline film is prepared.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a thin film deposition apparatus and a thin film deposition method.
Background
The successive inventions of the 20 th century 80, scanning tunneling microscope and atomic force microscope, enable people to study and process substances and materials at the level of 0.1 to 100 nanometer scale (thickness or length), and nanotechnology is thus gradually rising and widely applied to multiple fields of new energy, electronic computers and the like.
The nano-scale film material can greatly reduce the consumption of consumables, reduce the cost, effectively reduce the application volume of the material, reduce the size of a device and improve the integration density. In 1988, french scientists Albert Fert and German scientist Peter Gru nberg prepared a multi-layer metal film structure by using a molecular beam epitaxy technology and found giant magnetoresistance effect (Nobel physics prize in 2007), which greatly improved the sensitivity of the hard disk read head. However, the molecular beam epitaxy technique has a low growth rate, and is limited by factors such as high vacuum requirements, and thus it is difficult to produce a large-scale thin film. Later, the professor Stuart Parkin by IBM corporation successfully extended the giant magnetoresistance effect to industrial applications using magnetron sputter deposition techniques, increasing the storage density of hard disks by a factor of about 1000.
The nanometer film preparation processing technology is benefited, the fields of information storage and computer chips are rapidly developed and are enlarged, and the nanometer film preparation processing technology becomes a tide for technological innovation in the world. However, at present, moore's law has been approaching a bottleneck due to the physical limitations of semiconductor processing technology. In addition to continuous research into new material systems and exploration of fine and accurate processing techniques, the preparation of high-quality thin film materials can also promote the development of the information device field to a certain extent.
At present, in the actual industrial production process, the Physical Vapor Deposition (PVD) technology such as magnetron sputtering is mostly applied to prepare the thin film. The magnetron sputtering technology has the advantages of large area of a deposition uniform region, high deposition speed, low temperature rise of a substrate, uniform film thickness, high repeatability, good compactness and the like.
However, the existing magnetron sputtering film deposition method is difficult to prepare a high-quality monocrystalline film, wherein the monocrystalline film refers to a film with consistent internal crystal orientation and no other crystal orientation.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present application provide a thin film deposition apparatus and a thin film deposition method, so as to prepare a high quality monocrystalline thin film.
In order to achieve the above purpose, the embodiment of the present application provides the following technical solutions:
a thin film deposition apparatus comprising:
the deposition chamber is provided with a functional gas inlet for introducing functional gas, wherein the functional gas comprises argon;
the target bracket is arranged in the deposition chamber and is used for bearing a target required by depositing a target film;
the substrate table is arranged in the deposition chamber and opposite to the target bracket, and is used for bearing a substrate of a target film to be deposited, so that after a preset voltage is applied between the target and the substrate, the argon is ionized into plasma, and the target on the target bracket is bombarded, so that the target is deposited on the substrate to form the target film;
The electron gun is arranged on the side wall of the deposition chamber, the muzzle of the electron gun points to the surface of the substrate table and is obliquely opposite to the surface of the substrate table, and the electron gun is used for emitting electron beams to a target film deposited on the substrate after the target film covers the substrate, so that crystal grains with a preset crystal orientation in the target film are reduced or eliminated, and the target film is a monocrystalline film.
Optionally, the thin film deposition apparatus further includes:
and the baffle plate is arranged in the deposition chamber, when the baffle plate is closed, the baffle plate shields the substrate on the substrate table, and when the baffle plate is opened, the baffle plate exposes the substrate on the substrate table.
Optionally, the thin film deposition apparatus further includes:
a transition chamber in communication with the deposition chamber for placing the substrate through the transition chamber on a substrate table within the deposition chamber.
A thin film deposition method applied to the thin film deposition apparatus of any one of the above, the thin film deposition method comprising:
placing a target required for depositing a target film on a target bracket of the deposition chamber, and placing a substrate of the target film to be deposited on a substrate table of the deposition chamber;
Vacuumizing the deposition chamber to enable the vacuum degree in the deposition chamber to reach a preset vacuum degree;
heating the substrate to a first preset temperature;
filling functional gas into the deposition chamber through a functional gas inlet of the deposition chamber to enable the deposition chamber to reach a preset air pressure, wherein the functional gas comprises argon;
applying preset voltage between the target and the substrate to ionize the argon into plasma so as to bombard the target on the target bracket, depositing the target on the substrate to form a target film, and after the target film covers the substrate, turning on a power supply of the electron gun, and utilizing the electron gun to emit electron beams to the target film deposited on the substrate, so that crystal grains with preset crystal orientation in the target film are reduced or eliminated, and the target film is a monocrystalline film;
and closing the power supply of the electron gun, stopping applying voltage between the target and the substrate, stopping introducing the functional gas, shielding the substrate, and finishing the deposition of the target film.
Optionally, the muzzle of the electron gun points to a first direction, the surface of the substrate table is a first surface, and the included angle between the first direction and the first surface ranges from 10 degrees to 45 degrees, including an endpoint value.
Optionally, the muzzle of the electron gun points to a first direction, the surface of the substrate table is a first surface, and in the first direction, a distance between the muzzle of the electron gun and the first surface is less than or equal to 10cm.
Optionally, the voltage of the electron gun has a value ranging from 3kV to 30kV, including an endpoint value;
the frequency of the electron gun is in the range of 1Hz-10Hz, including the endpoint value;
the pulse length of the electron beam emitted by the electron gun is 50ns-100ns, including the end point value.
Optionally, the first preset temperature is not higher than 400 ℃.
Optionally, after the deposition of the target thin film is completed, the thin film deposition method further includes:
maintaining the substrate at the first preset temperature for a period of time;
or heating the substrate to a second preset temperature and maintaining the substrate at the second preset temperature for a period of time, wherein the second preset temperature is higher than the first preset temperature.
Optionally, the thin film deposition apparatus further includes a shutter, and the thin film deposition method further includes, before depositing the target onto the substrate to form the target thin film:
closing the baffle plate to shield the substrate on the substrate table by using the baffle plate, and applying preset voltage between the target and the substrate to ionize the argon into plasma so as to bombard the target on the target bracket for a period of time;
And after the baffle plate is opened subsequently, exposing the substrate on the substrate table, and continuously applying preset voltage between the target and the substrate to ionize the argon into plasma so as to bombard the target on the target bracket, so that the target is deposited on the substrate to form a target film.
Compared with the prior art, the technical scheme has the following advantages:
the thin film deposition device provided by the embodiment of the application comprises a deposition chamber, and a target bracket and a substrate table which are arranged in the deposition chamber and are opposite to each other, wherein the target bracket is used for bearing a target required by depositing a target thin film, the substrate table is used for bearing a substrate of the target thin film to be deposited, after a preset voltage is applied between the target and the substrate, argon introduced into the deposition chamber is ionized into plasma so as to bombard the target on the target bracket, and the target is deposited on the substrate to form the target thin film, namely, the target thin film is deposited on the substrate by utilizing a magnetron sputtering thin film deposition process; meanwhile, an electron gun is arranged on the side wall of the deposition chamber, and the gun mouth of the electron gun points to the surface of the substrate table and is obliquely opposite to the surface of the substrate table, so that after the target film covers the substrate, electron beams are emitted to the target film deposited on the substrate, crystal grains with a preset crystal orientation in the target film are reduced or eliminated, and only crystal grains with one crystal orientation almost exist in the target film, namely the crystal orientation in the target film tends to be consistent, so that the high-quality monocrystalline film is prepared.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic structural diagram of a thin film deposition apparatus according to an embodiment of the present disclosure;
FIG. 2 is a schematic flow chart of a thin film deposition method according to an embodiment of the present disclosure;
FIG. 3 is an X-ray diffraction 2theta scan of FeRh film sample S2 prepared without electron beam assisted deposition;
FIG. 4 is an X-ray diffraction 2theta scan of FeRh film sample S1 prepared by electron beam assisted deposition;
FIG. 5 is an X-ray diffraction phi scan of FeRh film sample S2 prepared without electron beam assisted deposition;
fig. 6 is an X-ray diffraction phi scan of a FeRh film sample S1 prepared using electron beam assisted deposition.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the schematic drawings, wherein the cross-sectional views of the device structure are not to scale for the sake of illustration, and the schematic drawings are merely examples, which should not limit the scope of protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
As described in the background section, existing magnetron sputtering thin film deposition methods have difficulty in producing high quality single crystal thin films.
The inventors have found that when a single crystal thin film is produced by the conventional magnetron sputtering thin film deposition method, for example, when a binary or multicomponent single crystal thin film is produced, particularly, for example, when a binary or multicomponent metal single crystal thin film is produced, it is difficult to produce a high quality single crystal thin film because crystal grains having different crystal orientations are easily present in the thin film produced under the conditions of medium and low temperatures (400 ℃ and below), resulting in poor crystallinity of the thin film growth; in addition, under the condition of high temperature (500 ℃ and above 500 ℃), although the crystal orientation inside the film is consistent, the crystallinity of the film growth is improved, but the wettability between the metal film and the oxide substrate is reduced, so that the surface roughness of the film is large and the thickness is uneven, and therefore, it is difficult to grow a high-quality single crystal film.
In order to improve this, the thin film may be grown under low temperature conditions, and then the grown thin film may be subjected to an in-situ heat treatment process, thereby simultaneously improving crystallinity and uniformity of the thin film material. However, factors such as annealing temperature, temperature rise and fall rate, heat preservation time, cavity vacuum and the like in the in-situ heat treatment process can influence the film components and the structure.
Therefore, how to prepare a high-quality monocrystalline film by using a magnetron sputtering film deposition method is a problem to be solved, which is not only of great significance to large-scale film growth preparation in the industrial field, but also of great significance to the deep research of the transport properties of the film material in terms of magnetism, electricity, sound, heat and the like in the laboratory level because various properties of the high-quality monocrystalline film material are closest to the intrinsic properties of the bulk material.
Based on the above-mentioned research, the embodiment of the present application provides a thin film deposition apparatus and a thin film deposition method to prepare a high-quality single crystal thin film.
The thin film deposition device provided by the embodiment of the application comprises a deposition chamber, and a target bracket and a substrate table which are arranged in the deposition chamber and are opposite to each other, wherein the target bracket is used for bearing a target required by depositing a target thin film, the substrate table is used for bearing a substrate of the target thin film to be deposited, after a preset voltage is applied between the target and the substrate, argon introduced into the deposition chamber is ionized into plasma so as to bombard the target on the target bracket, and the target is deposited on the substrate to form the target thin film, namely, the target thin film is deposited on the substrate by utilizing a magnetron sputtering thin film deposition process; meanwhile, an electron gun is arranged on the side wall of the deposition chamber, and the gun mouth of the electron gun points to the surface of the substrate table and is obliquely opposite to the surface of the substrate table, so that after the target film covers the substrate, electron beams are emitted to the target film deposited on the substrate, crystal grains with a preset crystal orientation in the target film are reduced or eliminated, and only crystal grains with one crystal orientation almost exist in the target film, namely the crystal orientation in the target film tends to be consistent, so that the high-quality monocrystalline film is prepared.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Fig. 1 shows a schematic structural diagram of a thin film deposition apparatus according to an embodiment of the present application, and as shown in fig. 1, the thin film deposition apparatus includes:
a deposition chamber 1, the deposition chamber 1 being provided with a functional gas inlet (not shown in fig. 1) for introducing a functional gas, the functional gas comprising argon;
a target bracket 2 arranged in the deposition chamber 1 and used for bearing a target 21 required by depositing a target film;
a substrate stage 3 disposed in the deposition chamber 1 and opposite to the target carrier 2, for carrying a substrate on which a target film is to be deposited, such that after a predetermined voltage is applied between the target 21 and the substrate, argon is ionized into plasma, thereby bombarding the target 21 on the target carrier 2, and depositing the target 21 on the substrate to form the target film;
the electron gun 4 is arranged on the side wall of the deposition chamber 1, the muzzle of the electron gun 4 points to the surface of the substrate table 3 and is obliquely opposite to the surface of the substrate table 3, and the electron gun 4 is used for emitting electron beams to the target film deposited on the substrate after the target film covers the substrate, so that crystal grains with a preset crystal orientation in the target film are reduced or eliminated, and the target film is a monocrystalline film.
The thin film deposition device provided by the embodiment of the application is a magnetron sputtering thin film deposition device, wherein a substrate table 3 carrying a substrate is used as an anode of a magnetron sputtering system, and a target bracket 2 carrying a target 21 required for depositing a target thin film is used as a cathode of the magnetron sputtering system.
In practice, the substrate stage 3 typically includes a heating device to heat a substrate placed on the substrate stage 3 to deposit a thin film under certain temperature conditions.
In particular operation, first, a target 21 required for depositing a target film is placed on the target holder 2 of the deposition chamber 1, and a substrate to be deposited with the target film is placed on the substrate stage 3 of the deposition chamber 1.
Secondly, the deposition chamber 1 is vacuumized, so that the vacuum degree in the deposition chamber 1 reaches a preset vacuum degree.
Then, the substrate is heated to a first preset temperature by a heating means in the substrate table 3.
Then, the functional gas (including argon) is filled into the deposition chamber 1 through the functional gas inlet of the deposition chamber 1, so that the deposition chamber 1 reaches a preset air pressure.
Next, a preset voltage is applied between the target 21 and the substrate, so that argon gas is ionized into plasma to bombard the target 21 on the target carrier 2, and the target 21 is deposited on the substrate to form a target film. Specifically, the dc power supply of the magnetron sputtering system is turned on, a voltage is applied between the cathode and the anode of the magnetron sputtering system, that is, a voltage is applied between the target 21 and the substrate, and when the applied voltage gradually increases to a preset voltage, a glow discharge phenomenon is generated between the cathode and the anode of the magnetron sputtering system, and a large amount of electrons and argon ions are generated. And the cathode of the magnetron sputtering system is also provided with a magnetic field for changing and prolonging the motion track of electrons, so that the electrons repeatedly collide with argon atoms, more argon ions are ionized to bombard the target 21, and the target 21 is deposited on the substrate to form a target film.
After the target film covers the substrate, the power supply of the electron gun 4 is turned on, and as the muzzle of the electron gun 4 points to the surface of the substrate table 3 and is obliquely opposite to the surface of the substrate table 3, the electron gun 4 can be utilized to emit electron beams to the target film deposited on the substrate, so that crystal grains with a preset crystal orientation in the target film are reduced or eliminated, and the target film is a monocrystalline film.
After the deposition of the target film is completed, the power supply of the electron gun 4 is turned off, the direct current power supply of the magnetron sputtering system is turned off, the application of voltage between the target 21 and the substrate is stopped, the introduction of argon into the deposition chamber 1 is stopped, and the substrate is shielded.
Therefore, the thin film deposition device provided by the embodiment of the application utilizes the magnetron sputtering thin film deposition process to deposit the target thin film on the substrate, simultaneously emits the electron beam with certain energy to the target thin film deposited on the substrate through the electron gun 4, and strikes the electron beam with certain energy to the target thin film at a specific angle, so that crystal grains with a preset crystal orientation in the target thin film are eliminated, and the high-quality monocrystalline thin film is obtained.
It will be understood that the larger the energy of the electron beam emitted by the electron gun 4, the more easily the crystal grains of the preset crystal orientation in the target film are eliminated, and a high quality monocrystalline film is obtained, while the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3, the included angle between the muzzle of the electron gun 4 and the surface of the substrate table 3, the voltage of the electron gun 4, the frequency of the electron gun 4 and the pulse length of the electron beam emitted by the electron gun 4 affect the energy of the electron beam impinging on the target film, and further affect the elimination of the crystal grains of the preset crystal orientation in the target film by the electron beam, which will be described in detail below.
The closer the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 is, the greater the energy of the electron beam emitted from the electron gun 4 acting on the target film is; conversely, the farther the distance between the muzzle of the electron gun 4 and the surface of the substrate stage 3, the smaller the energy of the electron beam emitted from the electron gun 4 acting on the target film. Specifically, the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 can be set reasonably according to the condition of the crystal grains with the preset crystal orientation to be eliminated in the target film.
Optionally, the muzzle of the electron gun 4 is pointed in the first direction, the surface of the substrate table 3 is the first surface, and in the first direction, the distance between the muzzle of the electron gun 4 and the first surface may be less than or equal to 10 cm, so as to reduce interference of gas scattering or magnetic field before the electron beam irradiates the surface of the target film.
It should be noted that the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 should not be too large, otherwise, the energy of the electron beam emitted by the electron gun 4 acting on the target film is too small to eliminate the crystal grains with the preset crystal orientation in the target film, and at the same time, the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 should not be too small to prevent the energy of the electron beam emitted by the electron gun 4 acting on the target film from being too large to affect the growth of the crystal grains with the normal crystal orientation.
The smaller the angle between the muzzle orientation of the electron gun 4 and the surface of the substrate table 3, i.e. the closer the muzzle orientation of the electron gun 4 is to be parallel to the surface of the substrate table 3, the smaller the energy of the electron beam emitted by the electron gun 4 acting on the target film; conversely, the larger the angle between the muzzle orientation of the electron gun 4 and the surface of the substrate table 3, i.e. the closer the muzzle orientation of the electron gun 4 is to be perpendicular to the surface of the substrate table 3, the greater the energy of the electron beam emitted by the electron gun 4 acting on the target film. Specifically, the included angle between the muzzle direction of the electron gun 4 and the surface of the substrate table 3 can be set reasonably according to the crystal orientation of crystal grains to be eliminated in the target film.
Alternatively, the muzzle of the electron gun 4 points to the first direction, the surface of the substrate table 3 is the first surface, and the included angle between the first direction and the first surface may be 10 ° -45 °, including the end point value.
Specifically, the muzzle direction of the electron gun 4 may be parallel to the crystal direction of the crystal grains to be eliminated in the target film, or the included angle between the muzzle direction and the crystal direction is within a preset range, so that the electron beam with certain energy emitted by the electron gun 4 acts on the crystal grains with certain crystal direction, the crystal grains with crystal direction are eliminated, and the target film becomes a high-quality monocrystalline film.
The higher the voltage of the electron gun 4, the higher the energy of the electron beam emitted from the electron gun 4, and the higher the energy acting on the target film; conversely, the smaller the voltage of the electron gun 4, the smaller the energy of the electron beam emitted from the electron gun 4, and the smaller the energy acting on the target film. The voltage of the electron gun 4 can be set reasonably according to the condition of the crystal grains with the preset crystal orientation to be eliminated in the target film.
For the frequency of the electron gun 4, the larger the frequency of the electron gun 4 is, the faster the crystal grains of the preset crystal orientation in the target film are eliminated; conversely, the smaller the frequency of the electron gun 4, the slower the crystal grains of the preset crystal orientation in the target film are eliminated. The frequency of the electron gun 4 can be reasonably set according to the condition of crystal grains with preset crystal orientation to be eliminated in the target film.
For the pulse length of the electron beam emitted by the electron gun 4, the larger the pulse length of the electron beam emitted by the electron gun 4 is, the faster the crystal grains of the preset crystal orientation in the target film are eliminated; conversely, the smaller the pulse length of the electron beam emitted from the electron gun 4, the slower the crystal grains of the predetermined crystal orientation in the target film are eliminated. The frequency of the electron gun 4 can be reasonably set according to the condition of crystal grains with preset crystal orientation to be eliminated in the target film.
Alternatively, the voltage of the electron gun 4 may range from 3 kV to 30 kV, inclusive;
the frequency of the electron gun 4 is in the range of 1 Hz-10 Hz, including the end point value;
the pulse length of the electron beam emitted from the electron gun 4 has a value ranging from 50ns to 100ns inclusive.
After the deposition of the thin film is started, the power of the electron gun 4 is turned on after the target thin film covers the substrate, so as to prevent the high-energy electron beam emitted by the electron gun 4 from directly striking the substrate to damage the substrate.
It should be noted that the functional gas includes argon, and the main reason is that argon is inert gas, and oxidation does not occur when the substrate is heated in a vacuum state, and meanwhile, the molecular weight of argon is large, so that better sputtering efficiency is ensured, and the argon is relatively easy to prepare and has lower price.
The functional gas may also include gases such as oxygen or nitrogen, as the case may be. For example, when the oxide layer film is prepared by a magnetron sputtering system, the functional gas may include oxygen to supplement oxygen atoms for the oxide layer film; when the nitride layer film is formed, the functional gas may include nitrogen gas to supplement nitrogen atoms to the nitride layer film. However, it should be noted that no matter what material film is prepared, argon ions are generated by argon gas to bombard the target material.
In addition, the thin film deposition device provided by the embodiment of the application irradiates the surface of the target thin film by using the electron gun 4 in the growth process of the target thin film, so that crystal grains growing in a specific orientation can be eliminated, and the prepared target thin film has high-quality monocrystalline characteristics, therefore, the substrate is not required to be heated to an excessively high temperature for thin film growth, and a complex heat treatment process is not required, so that good thin film flatness and uniformity can be ensured while the high-quality monocrystalline thin film is prepared, and the problem that the high-quality monocrystalline thin film is difficult to directly prepare by utilizing PVD (physical vapor deposition) technology such as magnetron sputtering is solved.
Specifically, the substrate is heated to a first preset temperature by using the heating device in the substrate table 3, and the first preset temperature can be 400 ℃ or below, namely, the target film is grown under the medium-low temperature condition, so that the surface roughness of the film is small and the thickness is uniform.
In addition, some magnetron sputtering thin film deposition devices are originally provided with a reflection high-energy electron diffraction gun (RHEED), so that an additional electron gun is not required to be purchased in the devices, the device is simple and easy to operate, and the equipment cost is low. However, the originally assembled reflective high-energy electron diffraction gun is mainly used for detecting the thickness of a growing film, the muzzle of the originally assembled reflective high-energy electron diffraction gun is far away from the surface of the substrate table, and the included angle between the muzzle direction of the originally assembled reflective high-energy electron diffraction gun and the surface of the substrate table is small, so that the included angle between the muzzle direction of the originally assembled reflective high-energy electron diffraction gun and the surface of the substrate table and the distance between the muzzle of the originally assembled reflective high-energy electron diffraction gun and the surface of the substrate table need to be properly increased.
On the basis of the above embodiments, optionally, in some embodiments of the present application, the thin film deposition apparatus may further include:
and a shutter plate arranged in the deposition chamber 1, wherein the shutter plate shields the substrate on the substrate table 3 when the shutter plate is closed, and exposes the substrate on the substrate table 3 when the shutter plate is opened.
Specifically, before the formal film deposition is performed, the baffle plate can be used for shielding the substrate on the substrate table 3, the magnetron sputtering direct current power supply is turned on first, after the pre-sputtering is performed for a period of time, the baffle plate is turned on again, the film deposition is formally started, and after the deposition is finished, the baffle plate is also required to be used for shielding the substrate on the substrate table 3 first, so that the target film is prevented from being damaged.
In addition to any of the above embodiments, optionally, in one embodiment of the present application, as shown in fig. 1, the thin film deposition apparatus may further include: a transition chamber 5, the transition chamber 5 being in communication with the deposition chamber 1 for placing a substrate on the substrate table 3 within the deposition chamber 1 through the transition chamber 5.
Specifically, it is generally necessary to first clean a substrate, then adhere the cleaned substrate to a substrate holder, transfer the substrate holder into the deposition chamber 1 through the transition chamber 5, and place the substrate holder on the substrate table 3 in the deposition chamber 1.
The embodiment of the application also provides a preparation method of film deposition, which is applied to the film deposition device provided by any one of the embodiments, as shown in fig. 2, and includes:
s10: the target 21 required for depositing the target film is placed on the target holder 2 of the deposition chamber 1, and the substrate of the target film to be deposited is placed on the substrate stage 3 of the deposition chamber 1.
The order of placing the target 21 on the target holder 2 and the substrate on the substrate stage 3 is not limited in this application.
Optionally, the thin film deposition apparatus may further include a transition chamber 5, the transition chamber 5 being in communication with the deposition chamber 1, and the substrate may be placed on the substrate stage 3 within the deposition chamber 1 through the transition chamber 5.
Specifically, it is generally necessary to first clean a substrate, then adhere the cleaned substrate to a substrate holder, and then transfer the substrate holder into the deposition chamber 1 through the transition chamber 5, and place the substrate holder on the substrate table 3 in the deposition chamber 1.
S20: the deposition chamber 1 is vacuumized, so that the vacuum degree in the deposition chamber 1 reaches a preset vacuum degree.
Specifically, the deposition chamber 1 is vacuumized by using a mechanical pump and an electronic pump, so that the vacuum degree in the deposition chamber 1 reaches a preset vacuum degree.
S30: the substrate is heated to a first preset temperature.
In practice, the substrate stage 3 typically includes a heating device to heat a substrate placed on the substrate stage 3 to deposit a thin film under certain temperature conditions. Thus, in step S30, the substrate table heating device is turned on to heat the substrate to a first preset temperature.
Optionally, the first preset temperature may be not higher than 400 ℃, so that the substrate deposits the target film under the medium-low temperature condition, and the surface roughness of the target film is small and the thickness is uniform. Of course, the first preset temperature may also be higher than 400 ℃, as the case may be.
S40: functional gas is filled into the deposition chamber 1 through a functional gas inlet of the deposition chamber 1, so that the deposition chamber 1 reaches a preset air pressure, and the functional gas comprises argon.
S50: and applying a preset voltage between the target 21 and the substrate to ionize argon into plasma so as to bombard the target 21 on the target bracket 2, depositing the target 21 on the substrate to form a target film, turning on a power supply of the electron gun 4 after the target film covers the substrate, and transmitting an electron beam to the target film deposited on the substrate by using the electron gun 4 to reduce or eliminate crystal grains with a preset crystal orientation in the target film, so that the target film becomes a monocrystalline film.
S60: the power supply of the electron gun 4 is turned off, the voltage is stopped to be applied between the target 21 and the substrate, the functional gas is stopped to be introduced, and the substrate is shielded, thereby completing the deposition of the target thin film.
The thin film deposition device applied by the preparation method is a magnetron sputtering thin film deposition device, wherein a substrate table 3 carrying a substrate is used as an anode of a magnetron sputtering system, and a target bracket 2 carrying a target 21 required for depositing a target thin film is used as a cathode of the magnetron sputtering system.
In step S50, the dc power supply of the magnetron sputtering system is turned on, a voltage is applied between the cathode and the anode of the magnetron sputtering system, that is, a voltage is applied between the target 21 and the substrate, and when the applied voltage gradually increases to a preset voltage, a glow discharge phenomenon is generated between the cathode and the anode of the magnetron sputtering system, and a large amount of electrons and argon ions are generated. And the cathode of the magnetron sputtering system is also provided with a magnetic field for changing and prolonging the motion track of electrons, so that the electrons repeatedly collide with argon atoms, more argon ions are ionized to bombard the target 21, and the target 21 is deposited on the substrate to form a target film.
In step S50, after the target film covers the substrate, the power of the electron gun 4 is turned on, and since the muzzle of the electron gun 4 points to the surface of the substrate table 3 and is obliquely opposite to the surface of the substrate table 3, the electron gun 4 can be used to emit electron beams to the target film deposited on the substrate, so as to reduce or eliminate crystal grains with a preset crystal orientation in the target film, and the target film is a monocrystalline film.
It will be understood that the larger the energy of the electron beam emitted by the electron gun 4, the more easily the crystal grains of the preset crystal orientation in the target film are eliminated, and a high quality monocrystalline film is obtained, while the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3, the included angle between the muzzle of the electron gun 4 and the surface of the substrate table 3, the voltage of the electron gun 4, the frequency of the electron gun 4 and the pulse length of the electron beam emitted by the electron gun 4 affect the energy of the electron beam impinging on the target film, and further affect the elimination of the crystal grains of the preset crystal orientation in the target film by the electron beam, which will be described in detail below.
The closer the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 is, the greater the energy of the electron beam emitted from the electron gun 4 acting on the target film is; conversely, the farther the distance between the muzzle of the electron gun 4 and the surface of the substrate stage 3, the smaller the energy of the electron beam emitted from the electron gun 4 acting on the target film. Specifically, the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 can be set reasonably according to the condition of the crystal grains with the preset crystal orientation to be eliminated in the target film.
Optionally, the muzzle of the electron gun 4 is pointed in the first direction, the surface of the substrate table 3 is the first surface, and in the first direction, the distance between the muzzle of the electron gun 4 and the first surface may be less than or equal to 10 cm, so as to reduce interference of gas scattering or magnetic field before the electron beam irradiates the surface of the target film.
It should be noted that the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 should not be too large, otherwise, the energy of the electron beam emitted by the electron gun 4 acting on the target film is too small to eliminate the crystal grains with the preset crystal orientation in the target film, and at the same time, the distance between the muzzle of the electron gun 4 and the surface of the substrate table 3 should not be too small to prevent the energy of the electron beam emitted by the electron gun 4 acting on the target film from being too large to affect the growth of the crystal grains with the normal crystal orientation.
The smaller the angle between the muzzle orientation of the electron gun 4 and the surface of the substrate table 3, i.e. the closer the muzzle orientation of the electron gun 4 is to be parallel to the surface of the substrate table 3, the smaller the energy of the electron beam emitted by the electron gun 4 acting on the target film; conversely, the larger the angle between the muzzle orientation of the electron gun 4 and the surface of the substrate table 3, i.e. the closer the muzzle orientation of the electron gun 4 is to be perpendicular to the surface of the substrate table 3, the greater the energy of the electron beam emitted by the electron gun 4 acting on the target film. Specifically, the included angle between the muzzle direction of the electron gun 4 and the surface of the substrate table 3 can be set reasonably according to the crystal orientation of crystal grains to be eliminated in the target film.
Alternatively, the muzzle of the electron gun 4 points to the first direction, the surface of the substrate table 3 is the first surface, and the included angle between the first direction and the first surface may be 10 ° -45 °, including the end point value.
Specifically, the muzzle direction of the electron gun 4 may be parallel to the crystal direction of the crystal grains to be eliminated in the target film, or the included angle between the muzzle direction and the crystal direction is within a preset range, so that the electron beam with certain energy emitted by the electron gun 4 acts on the crystal grains with certain crystal direction, the crystal grains with crystal direction are eliminated, and the target film becomes a high-quality monocrystalline film.
The higher the voltage of the electron gun 4, the higher the energy of the electron beam emitted from the electron gun 4, and the higher the energy acting on the target film; conversely, the smaller the voltage of the electron gun 4, the smaller the energy of the electron beam emitted from the electron gun 4, and the smaller the energy acting on the target film. The voltage of the electron gun 4 can be set reasonably according to the condition of the crystal grains with the preset crystal orientation to be eliminated in the target film.
For the frequency of the electron gun 4, the larger the frequency of the electron gun 4 is, the faster the crystal grains of the preset crystal orientation in the target film are eliminated; conversely, the smaller the frequency of the electron gun 4, the slower the crystal grains of the preset crystal orientation in the target film are eliminated. The frequency of the electron gun 4 can be reasonably set according to the condition of crystal grains with preset crystal orientation to be eliminated in the target film.
For the pulse length of the electron beam emitted by the electron gun 4, the larger the pulse length of the electron beam emitted by the electron gun 4 is, the faster the crystal grains of the preset crystal orientation in the target film are eliminated; conversely, the smaller the pulse length of the electron beam emitted from the electron gun 4, the slower the crystal grains of the predetermined crystal orientation in the target film are eliminated. The frequency of the electron gun 4 can be reasonably set according to the condition of crystal grains with preset crystal orientation to be eliminated in the target film.
Alternatively, the voltage of the electron gun 4 may range from 3 kV to 30 kV, inclusive;
the frequency of the electron gun 4 is in the range of 1 Hz-10 Hz, including the end point value;
the pulse length of the electron beam emitted from the electron gun 4 has a value ranging from 50ns to 100ns inclusive.
In step S50, after the target film is covered on the substrate, the power of the electron gun 4 is turned on to prevent the high-energy electron beam emitted from the electron gun 4 from directly striking the substrate to damage the substrate.
It should be noted that the functional gas may also include oxygen or nitrogen, as the case may be. For example, when the oxide layer film is prepared by a magnetron sputtering system, the functional gas may include oxygen to supplement oxygen atoms for the oxide layer film; when the nitride layer film is formed, the functional gas may include nitrogen gas to supplement nitrogen atoms to the nitride layer film. However, it should be noted that no matter what material film is prepared, argon ions are generated by argon gas to bombard the target material.
Therefore, the thin film deposition method provided by the embodiment of the application utilizes the magnetron sputtering thin film deposition process to deposit the target thin film on the substrate, and utilizes the electron beam to assist in deposition, specifically, the electron gun 4 emits the electron beam with certain energy to the target thin film deposited on the substrate, and the electron beam with certain energy is irradiated onto the target thin film at a specific angle, so that crystal grains with preset crystal orientation in the target thin film are eliminated, and the high-quality monocrystalline thin film is obtained.
In addition, the thin film deposition method provided by the embodiment of the application irradiates the surface of the target thin film by using the electron gun in the growth process of the target thin film, so that crystal grains growing in a specific orientation can be eliminated, and the prepared target thin film has high-quality monocrystal characteristics, therefore, the substrate is not required to be heated to an excessively high temperature for film growth, and a complex heat treatment process is not required, so that good film flatness and uniformity can be ensured while the high-quality monocrystal thin film is prepared, and the problem that the high-quality monocrystal thin film is difficult to directly prepare by utilizing PVD (physical vapor deposition) technologies such as magnetron sputtering is solved.
In addition, some magnetron sputtering thin film deposition devices are originally provided with a reflection high-energy electron diffraction gun (RHEED), so that an additional electron gun is not required to be purchased in the devices, the device is simple and easy to operate, and the equipment cost is low. However, the originally assembled reflective high-energy electron diffraction gun is mainly used for detecting the thickness of a growing film, the muzzle of the originally assembled reflective high-energy electron diffraction gun is far away from the surface of the substrate table, and the included angle between the muzzle direction of the originally assembled reflective high-energy electron diffraction gun and the surface of the substrate table is small, so that the included angle between the muzzle direction of the originally assembled reflective high-energy electron diffraction gun and the surface of the substrate table and the distance between the muzzle of the originally assembled reflective high-energy electron diffraction gun and the surface of the substrate table need to be properly increased.
On the basis of the above embodiment, optionally, in one embodiment of the present application, the thin film deposition apparatus may further include a shutter disposed in the deposition chamber 1, the shutter shielding the substrate on the substrate stage 3 when the shutter is closed, and exposing the substrate on the substrate stage 3 when the shutter is opened, and then, before depositing the target 21 on the substrate to form the target thin film, the method may further include:
s41: the shutter is closed to shield the substrate on the substrate table with the shutter and a preset voltage is applied between the target 21 and the substrate to ionize the argon gas into plasma to bombard the target 21 on the target carrier 2 for a period of pre-sputtering.
After the shutter is opened subsequently, the substrate on the substrate stage is exposed, and step S50 is continued, wherein a preset voltage is applied between the target 21 and the substrate, so that the argon gas is ionized into plasma to bombard the target 21 on the target carrier, and the target 21 is deposited on the substrate to form a target film.
And, after the film deposition is completed, the baffle plate can also be used for shielding the substrate on the substrate table 3, so as to prevent the damage to the target film.
Further optionally, in an embodiment of the present application, the thin film deposition method may further include an in situ heat treatment step, specifically:
S70: maintaining the substrate at a first preset temperature for a period of time;
or heating the substrate to a second preset temperature and maintaining the substrate at the second preset temperature for a period of time, wherein the second preset temperature is greater than the first preset temperature.
In the foregoing steps, by irradiating the target film with the electron gun 4 at a specific angle and distance, the crystal grains of the predetermined crystal orientation in the target film are eliminated, so that the target film has high quality single crystal characteristics, and the temperature of the substrate deposited film can be not higher than 400 ℃, and the uniformity of the target film is also made better. If further processing is desired to be performed on the single crystal film, the crystallinity and uniformity of the single crystal film are optimized, and after the deposition of the target film is completed, in step S70, the substrate is maintained at the first preset temperature for a period of time, or the substrate is heated to the second preset temperature for a period of time, and the second preset temperature is greater than the first preset temperature, so that the crystallinity and uniformity of the film material are simultaneously improved, and the quality of the grown single crystal film is better.
The method for preparing a FeRh film on an MgO substrate will be described in more detail.
S10: stoichiometric ratio of Fe and Rh was 1: 1. a FeRh alloy target 21 with the diameter of 60 mm and the thickness of 3 mm is placed on a target bracket 2 in a magnetron sputtering deposition chamber 1; the size is 5×5×0.5mm 3 And (3) sequentially ultrasonically cleaning the MgO substrate with the orientation of (001) by using acetone and absolute ethyl alcohol, drying by using nitrogen, adhering the MgO substrate to a substrate support of a magnetron sputtering system by using silver glue, and transferring the substrate support to a substrate table 3 of a magnetron sputtering deposition chamber 1 after the silver glue is dried.
S20: the deposition chamber 1 is vacuumized by a mechanical pump and a molecular pump, so that the vacuum degree in the deposition chamber 1 reaches 1 multiplied by 10 -5 Pa, wherein the frequency of the molecular pump is set to 450 Hz and the rotational speed is set to 27000 rpm.
S30: the heating device of the substrate table 3 is turned on to heat the substrate to 350 ℃, wherein the heating rate of the heating device of the substrate table 3 is 5 ℃/min.
S40: the argon valve was opened and argon gas was introduced into the deposition chamber 1 to set the operating pressure in the deposition chamber 1 to 0.4. 0.4 Pa.
S41: keeping the baffle plate of the substrate table 3 closed, turning on a direct current power supply of the magnetron sputtering system, wherein the power supply power is 70W, and applying voltage between the target 21 and the substrate to ionize argon into argon ions so as to bombard the target, and starting the pre-sputtering process for 5 min.
S50: and (3) turning on a self-rotation power supply of the substrate table 3, setting the self-rotation speed to be 10 revolutions per minute, turning on a baffle of the substrate table 3, starting formally growing a FeRh film, after the FeRh film covers the substrate, turning on a power supply of an electron gun 4 to irradiate the surface of the film, wherein the muzzle of the electron gun 4 points to be 10 cm away from the surface of the substrate table 3 along the muzzle of the electron gun 4, the included angle between the muzzle of the electron gun 4 and the surface of the substrate table 3 is 10 degrees, the voltage of the electron gun 4 is set to be 12 kV, the pulse length of the electron beam is set to be 100 ns, and the frequency is set to be 1 Hz.
S60: after the formal deposition is carried out for 20 min, the power supply of the electron gun 4 is turned off, the baffle plate of the substrate table 3 and the direct current power supply of the magnetron sputtering system are turned off, and the argon valve and the autorotation power supply of the substrate table 3 are turned off.
S70: and (3) performing a heat treatment process, setting the heating rate of the heating device of the substrate table 3 to be 5 ℃/min, heating to 500 ℃, preserving heat for 2 h, and then cooling to room temperature at the cooling rate of 5 ℃/min.
The FeRh film prepared by electron beam assisted deposition is numbered as S1, the thickness of the FeRh film is 50 nm, and the deposition rate is 2.5 nm/min.
Then, a FeRh film sample is prepared by the same film deposition method, in the process, the electron gun 4 is kept off in the whole process, namely electron beam auxiliary deposition is not adopted, the steps of the rest flow are unchanged, and the prepared film sample is numbered as S2.
And carrying out X-ray diffraction test on the prepared S1 and S2 film samples.
FIG. 3 is an X-ray diffraction 2theta (θ) scan pattern of FeRh film sample S2 prepared without electron beam assisted deposition, with a 2theta scan range of 20 ° -80 °. As can be seen from the measurement results, the positions of the (002) diffraction peaks of the MgO single crystal substrate were approximately 43 DEG, and the positions of the (001) crystal plane and the (002) crystal plane diffraction peaks of the FeRh film sample S2 were approximately 30 DEG and 61 DEG, respectively, and the crystal planes of only 1 direction were found to indicate that the orientation of the prepared FeRh film sample S2 in the out-of-plane direction was uniform, and it was confirmed that the FeRh film was epitaxially grown in the out-of-plane direction of the MgO substrate.
Fig. 4 is an X-ray diffraction 2theta (θ) scan pattern of a FeRh film sample S1 prepared by electron beam assisted deposition, which is the same as the S2 film sample, except for the (002) diffraction peak of the MgO single crystal substrate and the diffraction peaks of the (001) crystal face and the (002) crystal face of the FeRh film sample S1, but the S1 film sample has a stronger intensity than the diffraction peak of the FeRh in the S1 film sample.
Next, the in-plane orientation of the prepared S1 and S2 film samples was detected by phi scanning of X-ray diffraction.
FIG. 5 is an X-ray diffraction phi (phi) scan of a FeRh film sample S2 prepared without electron beam assisted deposition, wherein the (202) direction MgO has 4 diffraction peaks, and the adjacent two diffraction peaks are separated by 90 degrees, so that the cubic structure characteristics of the MgO single crystal substrate are met. However, 8 diffraction peaks were seen for FeRh in the (101) direction, with two adjacent diffraction peaks 45 apart, indicating that the prepared FeRh film sample S2 was not unidirectionally oriented in the in-plane direction, but rotated 45 in the in-plane direction during part of the grain growth.
FIG. 6 is an X-ray diffraction phi (phi) scan of a FeRh film sample S1 prepared by electron beam assisted deposition, wherein the (202) direction MgO has 4 diffraction peaks, and the adjacent two diffraction peaks are separated by 90 degrees, so that the characteristic of the cubic structure of the MgO single crystal substrate is met. The FeRh was seen to have only 4 diffraction peaks in the (101) direction, with two adjacent diffraction peaks separated by 90 °, which illustrates that the FeRh film sample S1 prepared by the film deposition method of the examples of the present application was unidirectionally oriented in the in-plane direction. Moreover, in the phi scan pattern, the diffraction peaks of FeRh and MgO differ by 45 degrees, indicating that the FeRh film is rotated 45 degrees relative to the MgO single crystal substrate during epitaxial growth. Both FeRh and MgO are cubic structures, the lattice constant of FeRh is 2.99A, and the lattice constant of MgO is 4.216A, which is consistent with the experimental results.
Therefore, the film deposition method according to the embodiment of the present application has significant monocrystalline characteristics compared with the FeRh film sample S2 prepared without using the electron beam assisted deposition, which illustrates that the film deposition method according to the embodiment of the present application plays an important role in preparing a high-quality monocrystalline film sample.
In the description, each part is described in a parallel and progressive mode, and each part is mainly described as a difference with other parts, and all parts are identical and similar to each other.
The features described in the various embodiments of the present disclosure may be interchanged or combined with one another in the description to enable those skilled in the art to make or use the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A thin film deposition apparatus, comprising:
the deposition chamber is provided with a functional gas inlet for introducing functional gas, wherein the functional gas comprises argon;
the target bracket is arranged in the deposition chamber and is used for bearing a target required by depositing a target film;
the substrate table is arranged in the deposition chamber and opposite to the target bracket, and is used for bearing a substrate of a target film to be deposited, so that after a preset voltage is applied between the target and the substrate, the argon is ionized into plasma, and the target on the target bracket is bombarded, so that the target is deposited on the substrate to form the target film;
the electron gun is arranged on the side wall of the deposition chamber, the muzzle of the electron gun points to the surface of the substrate table and is obliquely opposite to the surface of the substrate table, and the electron gun is used for emitting electron beams to a target film deposited on the substrate after the target film covers the substrate, so that crystal grains with a preset crystal orientation in the target film are reduced or eliminated, and the target film is a monocrystalline film.
2. The thin film deposition apparatus according to claim 1, further comprising:
And the baffle plate is arranged in the deposition chamber, when the baffle plate is closed, the baffle plate shields the substrate on the substrate table, and when the baffle plate is opened, the baffle plate exposes the substrate on the substrate table.
3. The thin film deposition apparatus according to claim 1 or 2, further comprising:
a transition chamber in communication with the deposition chamber for placing the substrate through the transition chamber on a substrate table within the deposition chamber.
4. A thin film deposition method, characterized by being applied to the thin film deposition apparatus according to any one of claims 1 to 3, comprising:
placing a target required for depositing a target film on a target bracket of the deposition chamber, and placing a substrate of the target film to be deposited on a substrate table of the deposition chamber;
vacuumizing the deposition chamber to enable the vacuum degree in the deposition chamber to reach a preset vacuum degree;
heating the substrate to a first preset temperature;
filling functional gas into the deposition chamber through a functional gas inlet of the deposition chamber to enable the deposition chamber to reach a preset air pressure, wherein the functional gas comprises argon;
Applying preset voltage between the target and the substrate to ionize the argon into plasma so as to bombard the target on the target bracket, depositing the target on the substrate to form a target film, and after the target film covers the substrate, turning on a power supply of the electron gun, and utilizing the electron gun to emit electron beams to the target film deposited on the substrate, so that crystal grains with preset crystal orientation in the target film are reduced or eliminated, and the target film is a monocrystalline film;
and closing the power supply of the electron gun, stopping applying voltage between the target and the substrate, stopping introducing the functional gas, shielding the substrate, and finishing the deposition of the target film.
5. The thin film deposition method according to claim 4, wherein the muzzle of the electron gun is directed in a first direction, the surface of the substrate table is a first surface, and the included angle between the first direction and the first surface is in a range of 10 ° -45 °, inclusive.
6. The thin film deposition method according to claim 4, wherein a muzzle of the electron gun is directed in a first direction, the substrate table surface is a first surface, and a distance between the muzzle of the electron gun and the first surface in the first direction is 10cm or less.
7. The thin film deposition method according to claim 4, wherein the voltage of the electron gun has a value ranging from 3kV to 30kV, inclusive;
the frequency of the electron gun is in the range of 1Hz-10Hz, including the endpoint value;
the pulse length of the electron beam emitted by the electron gun is 50ns-100ns, including the end point value.
8. The thin film deposition method according to claim 4, wherein the first preset temperature is not higher than 400 ℃.
9. The thin film deposition method according to claim 4, wherein after the deposition of the target thin film is completed, the thin film deposition method further comprises:
maintaining the substrate at the first preset temperature for a period of time;
or heating the substrate to a second preset temperature and maintaining the substrate at the second preset temperature for a period of time, wherein the second preset temperature is higher than the first preset temperature.
10. The thin film deposition method according to claim 4, wherein the thin film deposition apparatus further comprises a shutter, the thin film deposition method further comprising, before depositing the target onto the substrate to form a target thin film:
closing the baffle plate to shield the substrate on the substrate table by using the baffle plate, and applying preset voltage between the target and the substrate to ionize the argon into plasma so as to bombard the target on the target bracket for a period of time;
And after the baffle plate is opened subsequently, exposing the substrate on the substrate table, and continuously applying preset voltage between the target and the substrate to ionize the argon into plasma so as to bombard the target on the target bracket, so that the target is deposited on the substrate to form a target film.
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