CN116037746A - Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet - Google Patents

Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet Download PDF

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CN116037746A
CN116037746A CN202310049033.4A CN202310049033A CN116037746A CN 116037746 A CN116037746 A CN 116037746A CN 202310049033 A CN202310049033 A CN 202310049033A CN 116037746 A CN116037746 A CN 116037746A
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copper
ceramic substrate
solving
large bubbles
chemical
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CN116037746B (en
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董明锋
蔡俊
李炎
臧明伟
王嘉俊
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Jiangsu Fulehua Semiconductor Technology Co ltd
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Jiangsu Fulehua Semiconductor Technology Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21DWORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21D22/00Shaping without cutting, by stamping, spinning, or deep-drawing
    • B21D22/02Stamping using rigid devices or tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21DWORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21D37/00Tools as parts of machines covered by this subclass
    • B21D37/16Heating or cooling

Abstract

The invention discloses a method for solving the problem that large bubbles exist after sintering of a chemical copper oxide sheet, which relates to the field of processing of copper-clad ceramic substrates and aims at solving the technical scheme that the method comprises the following steps: a method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet comprises the following three steps before a sintering process: firstly, baking a certain number of unwashed copper sheets at a high temperature under a protective atmosphere, setting the high temperature to be higher than 260 ℃, and cleaning after cooling; secondly, stamping the copper sheet subjected to the baking step before a chemical oxidation process, wherein the stamping is arc-shaped; thirdly, performing chemical oxidation on the copper sheet. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical oxidation copper sheet can effectively reduce the generated bubbles and has high sintering quality.

Description

Method for solving problem of large bubbles of copper-clad ceramic substrate sintered by chemical copper oxide sheet
Technical Field
The invention relates to the field of copper-clad ceramic carrier plate processing, in particular to a method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet.
Background
The metallization process of ceramics is particularly important in the DCB production process. Because of Al 2 O 3 The key point of the DBC process is to effectively control the generation and distribution of eutectic liquid phase on the interface of the copper foil and the alumina ceramic and the solidification behavior in the cooling process in the preparation process of the substrate. The copper sheets in the prior art have more large bubbles after being subjected to chemical oxidation sintering, and the sintering quality and the product performance are seriously affected.
There is therefore a need to propose a new solution to this problem.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet, which is used for improving bubbles generated during sintering of the copper oxide sheet by carrying out stamping treatment after baking.
The technical aim of the invention is realized by the following technical scheme: a method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet comprises the following three steps before a sintering process: firstly, baking a certain number of unwashed copper sheets at a high temperature under a protective atmosphere, setting the high temperature to be higher than 260 ℃, and cleaning after cooling; secondly, stamping the copper sheet subjected to the baking step before a chemical oxidation process, wherein the stamping is arc-shaped; thirdly, performing chemical oxidation on the copper sheet.
The invention is further provided with: in one step, the baking equipment is an oven, the protective atmosphere is nitrogen atmosphere, the oxygen partial pressure in the oven ranges from 40 ppm to 100ppm, and the flow of the introduced nitrogen is 80L/min to 100L/min.
The invention is further provided with: in one step, the mentioned baking temperature is 260-350deg.C, heating time is 60-120 min, baking time is 100-300min, and cooling time is 100-300min.
The invention is further provided with: the number of the copper sheets in the oven is 1-200 sheets per stack, and the distance between the stacks is 5-10cm from front to back and from left to right.
The invention is further provided with: in the two steps, after the stamping treatment, the copper sheet bulges in the short side direction, the height difference from the bulge to the lowest part of the copper sheet is 0.2-1.0cm, the length of the copper sheet is unchanged, and the width of the copper sheet is reduced by 0.2-1cm.
The invention is further provided with: and in the sintering process, the oxidized long sides of the copper sheets are attached to the long sides of the porcelain sheets, the bulge faces upwards, and the distance between the edges of the copper sheets and the edges of the porcelain sheets is 0.3-0.6cm.
The invention is further provided with: the ceramic chip is an alumina ceramic chip or a zirconia ceramic chip.
In summary, the invention has the following beneficial effects: the copper sheet is softened through high-temperature treatment, then has a specific state through the action of external force, and is better attached to the ceramic chip at high temperature, so that bubbles are generated directly between the attached copper sheet and the ceramic chip, and the sintering quality of the copper-clad ceramic substrate is improved.
Drawings
FIG. 1 is a schematic diagram of sintering and discharging a normal copper-clad ceramic substrate in the prior art;
FIG. 2 is a schematic diagram of sintering and discharging of a copper-clad ceramic substrate according to the technical scheme;
FIG. 3 is a state diagram of the copper-clad ceramic substrate according to the present embodiment after sintering;
fig. 4 is a diagram showing that the copper-clad ceramic substrate is sintered to have large bubbles according to the prior art.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
A method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet comprises the following three steps before a sintering process: firstly, baking a certain number of unwashed copper sheets at a high temperature under a protective atmosphere, setting the high temperature to be higher than 260 ℃, and cleaning after cooling; secondly, stamping the copper sheet subjected to the baking step before a chemical oxidation process, wherein the stamping is arc-shaped; thirdly, performing chemical oxidation on the copper sheet.
In one step, the baking equipment is an oven, the protective atmosphere is nitrogen atmosphere, the oxygen partial pressure range in the oven is 40-100ppm, and the flow of the introduced nitrogen is 80-100L/min; and the baking temperature is 260-350 ℃, the heating time is 60-120 min, the baking time is 100-300min, and the cooling time is 100-300min.
The number of copper sheets in the oven is 1-200 sheets per stack, and the distance between the stacks is 5-10cm from front to back.
Meanwhile, in the two steps, after stamping treatment, the copper sheet bulges in the short side direction, the height difference from the bulge to the lowest part of the copper sheet is 0.2-1.0cm, the length of the copper sheet is unchanged, and the width of the copper sheet is reduced by 0.2-1cm; for better demonstration, fig. 1 is a schematic diagram of sintering and discharging of a normal copper-clad ceramic substrate in the prior art; fig. 2 is a schematic diagram of sintering and discharging of a copper-clad ceramic substrate according to the technical scheme.
And in the sintering process, the oxidized long sides of the copper sheets are attached to the long sides of the porcelain sheets, the bulge faces upwards, and the distance between the edges of the copper sheets and the edges of the porcelain sheets is 0.3-0.6cm.
The ceramic tile may be alumina ceramic tile or zirconia ceramic tile.
The copper sheet is softened by high-temperature treatment, and then has a specific state by means of external force, so that the copper sheet is better attached to the ceramic chip at high temperature, and bubbles are rarely generated directly after the copper sheet is attached to the ceramic chip, thereby improving the sintering quality of the copper-clad ceramic substrate.
Namely, as shown in fig. 3, the copper-clad ceramic substrate after sintering is in a state without large bubbles, and as shown in fig. 4, the copper-clad ceramic substrate prepared by the conventional method is in a state with large bubbles on the surface.
The principle is as follows: the method has the advantages that the physical properties of the copper sheets can be changed after the high-temperature treatment in one step of the process steps, the hardness of the copper sheets is reduced, the two-step stamping treatment is convenient, meanwhile, the copper sheets are more fully subjected to chemical oxidation to a certain extent, sintering is facilitated, the two-step stamping treatment endows the copper sheets with a regular radian, the problem that the bending sizes of the copper sheets (the copper sheets are obtained by cutting copper rolls, the warping difference between the outer copper roll layer and the inner copper roll layer is large) are different is avoided, the gas discharge during sintering is facilitated by the middle bulge structure, the flowing direction of copper-oxygen eutectic liquid in the sintering process of the copper-clad ceramic substrate is carried out along the advancing direction of the mesh belt of the tunnel furnace from front to back, the bonding process of the copper sheets and the ceramic sheets is optimized by the radian brought by the stamping, and the problem that the gas generated in the bonding process cannot be discharged due to the simultaneous bonding of the eutectic liquid from the periphery to the middle is avoided to a certain extent.
The following examples are given as specific illustrations:
stacking copper sheets with the thickness of 0.2,0.25,0.3 in an oven, placing 900 sheets in each layer, 6 stacks of copper sheets in each layer, and 150 sheets of copper sheets in each stack, wherein the distance between the front side, the rear side, the left side and the right side of each stack of copper sheets is 5cm, then introducing nitrogen into the oven, wherein the flow rate of the nitrogen is 90L/min, and the partial pressure of oxygen in the oven is 70ppm; heating to 280 ℃ within 120min, preserving heat for 120min, then cooling for three hours, cleaning and airing the copper sheet, then punching, wherein a punching machine is adopted for punching, a grinding tool of the punching machine is provided with an arc-shaped lug which directly acts on the copper sheet, so that the short side direction of the copper sheet bulges upwards, the height difference from the bulge to the lowest part of the copper sheet is 0.4cm, the length of the copper sheet is unchanged, and the width is reduced by 0.3cm; and then the copper sheet is subjected to chemical oxidation, and the copper sheet is sintered after the oxidation is completed.
The sintering result statistics are shown in the following table:
Figure BDA0004056898050000031
therefore, the method provided by the invention can effectively reduce the probability of generating large bubbles after the copper-clad ceramic substrate is sintered, thereby improving the sintering quality of the copper-clad ceramic substrate.
In the process, baking is performed first, and then cleaning is performed, because the baked copper sheet is easy to oxidize after cleaning, and cleaning is needed again, the surface roughness of the copper sheet is increased, and the sintering yield is influenced; and because sintering temperature is higher, the copper sheet can soften under the high temperature, does not give a specific radian, and it can irregularly soften, leads to probably some places and copper sheet laminating, and some places do not have, when laminating with the porcelain piece like this, the place that does not laminate will become the bubble, consequently set up a radian for the copper sheet through manmade, can make the copper sheet better keep the uniformity, and for having the radian that accords with production characteristics for the copper sheet, therefore carry out high temperature treatment before wasing, after handling through high temperature, the copper sheet can soften, plasticity is become strong, can not take place elasticity resilience, thereby make things convenient for the punching machine to grind out the copper sheet radian that accords with the requirement.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.

Claims (8)

1. A method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet is characterized in that the copper-clad ceramic substrate is subjected to at least the following three steps before a sintering process: firstly, baking a certain number of unwashed copper sheets at a high temperature under a protective atmosphere, setting the high temperature to be higher than 260 ℃, and cleaning after cooling; secondly, stamping the copper sheet subjected to the baking step before a chemical oxidation process, wherein the stamping is arc-shaped; thirdly, performing chemical oxidation on the copper sheet.
2. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical copper oxide sheet according to claim 1, which is characterized in that: in one step, the baking equipment is an oven, the protective atmosphere is nitrogen atmosphere, the oxygen partial pressure in the oven ranges from 40 ppm to 100ppm, and the flow of the introduced nitrogen is 80L/min to 100L/min.
3. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical copper oxide sheet according to claim 2, which is characterized in that: in one step, the mentioned baking temperature is 260-350deg.C, heating time is 60-120 min, baking time is 100-300min, and cooling time is 100-300min.
4. A method for solving the problem of large bubbles of a copper-clad ceramic substrate sintered by a chemical copper oxide sheet according to claim 3, wherein the method comprises the following steps: the number of the copper sheets in the oven is 1-200 sheets per stack, and the distance between the stacks is 5-10cm from front to back and from left to right.
5. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical copper oxide sheet according to claim 1, which is characterized in that: in the two steps, after the stamping treatment, the copper sheet bulges in the short side direction, the height difference from the bulge to the lowest part of the copper sheet is 0.2-1.0cm, the length of the copper sheet is unchanged, and the width of the copper sheet is reduced by 0.2-1cm.
6. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical copper oxide sheet according to claim 1, which is characterized in that: and in the sintering process, the oxidized long sides of the copper sheets are attached to the long sides of the porcelain sheets, the bulge faces upwards, and the distance between the edges of the copper sheets and the edges of the porcelain sheets is 0.3-0.6cm.
7. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical copper oxide sheet according to claim 6, which is characterized in that: the ceramic chip is an alumina ceramic chip or a zirconia ceramic chip.
8. The method for solving the problem of large bubbles of the copper-clad ceramic substrate sintered by the chemical copper oxide sheet according to claim 5, which is characterized in that: the stamping equipment is a stamping machine.
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