CN116032246B - Duplexer - Google Patents
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- CN116032246B CN116032246B CN202310301895.1A CN202310301895A CN116032246B CN 116032246 B CN116032246 B CN 116032246B CN 202310301895 A CN202310301895 A CN 202310301895A CN 116032246 B CN116032246 B CN 116032246B
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a duplexer, and relates to the field of filtering devices for communication. The duplexer comprises a packaging substrate, a receiving filter wafer and a transmitting filter wafer which are stacked; a receiving filter formed by a surface acoustic wave resonator is arranged on the upper surface of the receiving filter wafer; the upper surface of the transmitting filter wafer is provided with a transmitting filter formed by a bulk acoustic wave resonator; the antenna port, the transmitting port and the grounding port of the transmitting filter are led to the upper surface of the wafer of the receiving filter through metal columns and are electrically connected with the metal layer of the packaging substrate. The invention can improve the design freedom of the device while ensuring the miniaturization of the device so as to optimize the performance of the duplexer.
Description
Technical Field
The invention relates to the field of filtering devices for communication, in particular to a duplexer.
Background
With the increase of frequency bands supported by wireless communication equipment, the frequency bands used by the wireless communication equipment are more and more dense, so that in order to improve the communication quality, the interference among the frequency bands is reduced, the communication quality is improved, and higher requirements on the performance and the size of devices such as a duplexer and the like are required. The performance of a bulk acoustic wave duplexer is determined by its resonator, for which the effective electromechanical coupling coefficient is one of its parameters and its important parameters determine the bandwidth and roll-off of the filter it constitutes. For the bulk acoustic wave filter grown on the same wafer, the materials are fixed, and the effective electromechanical coupling coefficients are the same, so that the freedom degree of design is greatly limited. Often, when designing a bulk acoustic wave device, a series inductance (usually implemented by winding wires in a substrate or adding discrete components off-chip) is further disposed between the parallel resonator and the ground in a parallel branch of a ladder-type structure, and the position of a transmission zero point is adjusted by changing the resonant frequency of the resonator so as to change the electromechanical coupling coefficient of the corresponding resonator, so as to increase the degree of freedom of design. The presence of the wire-wound/discrete components increases the chip size in addition to the loss, and the transmission zero offset due to the presence of the inductive electromagnetic coupling in the substrate causes deterioration of the out-of-band rejection of the bulk acoustic wave device. Secondly, the control of the electromechanical coupling coefficient of the resonator is realized by adding the suppression resonator or the capacitive element, so that higher design freedom is obtained, but the method also generally causes the size of the device to be increased, which is unfavorable for miniaturization.
Therefore, on the premise of not affecting other performances of the device and not increasing the size of the device, the effective electromechanical coupling coefficient is adjustable, and the improvement of the design freedom of the device is still a problem to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention provides a duplexer that can improve the degree of freedom of device design while being miniaturized, so as to optimize the performance of the duplexer.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
a diplexer, comprising:
the packaging substrate, the receiving filter wafer and the transmitting filter wafer are stacked;
a receiving filter formed by a surface acoustic wave resonator is arranged on the upper surface of the receiving filter wafer;
the upper surface of the transmitting filter wafer is provided with a transmitting filter formed by a bulk acoustic wave resonator; the antenna port, the transmitting port and the grounding port of the transmitting filter are led to the upper surface of the wafer of the receiving filter through metal columns and are electrically connected with the metal layer of the packaging substrate.
Optionally, the emission filter specifically includes:
the four series bulk acoustic wave resonators and the four parallel bulk acoustic wave resonators form an emitter bulk acoustic wave filter with a trapezoid structure;
the first series bulk acoustic wave resonator, the second series bulk acoustic wave resonator, the third series bulk acoustic wave resonator and the fourth series bulk acoustic wave resonator are sequentially connected in series, the other end of the first series bulk acoustic wave resonator is electrically connected with the antenna port, and the other end of the fourth series bulk acoustic wave resonator is electrically connected with the emission port; the first series bulk acoustic wave resonator is connected with a capacitive reactance element in series or in parallel;
the first parallel bulk acoustic wave resonator and the second parallel bulk acoustic wave resonator are respectively connected in parallel with the connecting end of the first serial bulk acoustic wave resonator and the second serial bulk acoustic wave resonator and the connecting end of the second serial bulk acoustic wave resonator and the third serial bulk acoustic wave resonator, and are connected in series with the first pair of ground inductors to form a first parallel branch circuit to be grounded;
the third parallel bulk acoustic wave resonator and the fourth parallel bulk acoustic wave resonator are respectively connected in parallel with the connecting end of the third serial bulk acoustic wave resonator and the fourth serial bulk acoustic wave resonator and the connecting end of the fourth serial bulk acoustic wave resonator and the transmitting port, and are connected in series with the second pair of ground inductors to form a second parallel branch circuit to be grounded.
Optionally, the capacitive reactance element of the first series bulk acoustic wave resonator is specifically:
the first series bulk acoustic wave resonator is connected in series with an inductance, or the first series bulk acoustic wave resonator is connected in parallel with a capacitance.
Optionally, the capacitive reactance element is arranged on the lower surface of the wafer of the receiving filter and is connected with the first series bulk acoustic wave resonator through a butt joint pin or a metal column.
Optionally, the first pair of grounding inductors are arranged on the lower surface of the receiving filter wafer, one end of each first pair of grounding inductors is electrically connected with the connecting ends of the first parallel bulk acoustic wave resonator and the second parallel bulk acoustic wave resonator through the butt joint pins, and the other end of each first pair of grounding inductors is led to the upper surface of the receiving filter wafer through the metal column and is electrically connected with the metal layer of the packaging substrate.
Optionally, the second inductance is disposed in the package substrate, one end of the second inductance is electrically connected with the connection ends of the second parallel bulk acoustic resonator and the third parallel bulk acoustic resonator through a butt pin, and the other end of the second inductance is led to the next metal layer of the package substrate through a metal column.
Optionally, the receiving filter specifically includes:
a receiving SAW filter composed of a series SAW resonator, two parallel SAW resonators and a fifth-order DMS;
one end of the serial surface acoustic wave resonator is electrically connected with the antenna port, the other end of the serial surface acoustic wave resonator is electrically connected with an even-order IDT at one end of the fifth-order DMS, and an odd-order IDT at the other end of the fifth-order DMS is electrically connected with the receiving port;
one end of the first parallel SAW resonator is electrically connected with the connecting end of the serial SAW resonator and the fifth-order DMS, and the other end of the first parallel SAW resonator is commonly grounded with the odd-order IDT at one end of the fifth-order DMS;
one end of the second parallel SAW resonator is electrically connected with the connection end of the fifth-order DMS and the receiving port, and the other end of the second parallel SAW resonator is commonly grounded with the even-order IDT at one end of the fifth-order DMS.
Optionally, the receiving filter wafer and the transmitting filter wafer are bonded through a metal sealing ring to form a metal sealing cavity.
Optionally, the metal seal ring is electrically connected to the metal layer of the package substrate in a flip-chip manner through the via hole of the receiving filter wafer.
The invention has the following beneficial effects:
(1) The invention adopts the packaging substrate, the receiving filter wafer and the transmitting filter wafer which are arranged in a stacked manner, and the transmitting filter and the receiving filter are arranged on different wafers and are overlapped up and down, so that the volume of the device can be further reduced; and the bulk acoustic wave resonator is adopted in the transmitting filter, and the surface acoustic wave resonator is adopted in the receiving filter, so that the power capacity of the hybrid duplexer can be remarkably improved compared with that of a single surface acoustic wave duplexer;
(2) The capacitive reactance element is introduced into the transmitting filter, so that the electromechanical coupling coefficient of the resonator can be adjusted, and the roll-off of the filter is improved. And the capacitive reactance element is arranged on the lower surface of the wafer of the receiving filter and is connected with the corresponding serial bulk acoustic wave resonator through a butt joint pin or a metal column. Through the specific mode, the capacitive element can be introduced at any position of the device, so that the degree of freedom of the design of the device is greatly increased, and the matching and insertion loss are improved; the chip size is not increased, and the miniaturization is further realized;
(3) According to the invention, the grounding inductors with larger coupling influence in the transmitting filter are respectively arranged on the lower surface of the upper wafer and the packaging substrate, and the distance between the inductors influenced by inductive coupling is pulled by the specific mode, so that the coupling influence between the upper wafer and the packaging substrate is weakened; and the winding inductance in the packaging substrate is reduced, the number of layers of the packaging substrate is reduced, the thickness of the packaging substrate is thinned, and the size of the device is further reduced.
Drawings
Fig. 1 is a schematic diagram of a conventional duplexer package and a device according to a comparative example of the present invention;
fig. 2 is a schematic diagram of a packaging mode and a device of a duplexer according to an embodiment of the present invention;
FIG. 3a is a schematic diagram of a basic resonant circuit; FIG. 3b is a schematic diagram of the basic resonant circuit series inductance; FIG. 3c is a schematic diagram of a basic resonant circuit parallel inductance; FIG. 3d is a schematic diagram of a basic resonant circuit parallel capacitor;
fig. 4a is a graph of admittance of the resonator, fig. 4b is a graph of series inductance of the resonator versus admittance of the resonator, fig. 4c is a graph of parallel inductance of the resonator versus admittance of the resonator, and fig. 4d is a graph of parallel capacitance of the resonator versus admittance of the resonator;
fig. 5 is a schematic circuit diagram of a duplexer according to an embodiment of the present invention;
FIG. 6a is a schematic diagram of a top surface layout of a transmit filter wafer in one embodiment, FIG. 6b is a schematic diagram of a bottom surface layout of a receive filter wafer in one embodiment, FIG. 6c is a schematic diagram of a top surface layout of a receive filter wafer in one embodiment, and FIG. 6d is a schematic diagram of a bottom metal layer layout of a package substrate in one embodiment;
fig. 7 is a schematic circuit diagram of a duplexer according to another embodiment of the present invention;
FIG. 8a is a schematic diagram of a top surface layout of a transmit filter wafer in another embodiment, FIG. 8b is a schematic diagram of a bottom surface layout of a receive filter wafer in another embodiment, FIG. 8c is a schematic diagram of a top surface layout of a receive filter wafer in another embodiment, and FIG. 8d is a schematic diagram of a bottom metal layer layout of a package substrate in another embodiment;
FIG. 9a is a schematic diagram of a process flow of a bulk acoustic wave resonator on a transmit filter wafer; FIG. 9b is a flow chart of a process for receiving capacitance or inductance from the bottom surface of a filter wafer; FIG. 9c is a flow chart of a transmit filter wafer and receive filter wafer bonding process; FIG. 9d is a process flow diagram of the creation of a receive filter on a bonded receive filter wafer; fig. 9e is a process flow diagram for PAD extraction.
Wherein the reference numerals are as follows: 101. filter wafer, 102, protective cap wafer, 103, substrate, 104, resonator, 105, seal ring, 106, via, 107, gold ball, 201, package substrate, 202, receiving filter wafer, 203, transmitting filter wafer, 204, capacitor, 205, inductor, 206, docking pin, 207, metal seal ring.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
Comparative example
As shown in fig. 1, a packaging mode and a device schematic diagram used for a conventional duplexer according to a comparative example of the present invention are shown. The conventional duplexer generally adopts a device structure in which a filter wafer 101, a protective cap wafer 102 and a substrate 103 are laminated in sequence from top to bottom, a transmitting filter and a receiving filter are formed by resonators 104 arranged on the lower surface of the filter wafer 101, and the lower surface of the filter wafer 101 is bonded with the upper surface of the protective cap wafer 102 through a sealing ring 105 to form a closed structure. The seal ring 105 and the resonator 104 on the filter wafer 101 are electrically connected by flip-chip bonding through the via 106 of the cap wafer 102 with a pattern of gold balls 107 corresponding to the metal layer M1 of the substrate 103. Wherein the substrate 103 is formed by stacking multiple layers of metal and medium in a crossing way, M4 is a distributed pin so as to be connected with other devices, and M2 and M3 are mainly used for realizing series inductance of parallel arms.
Examples
As shown in fig. 2, an embodiment of the present invention provides a duplexer, including:
a package substrate 201, a reception filter wafer 202, and a transmission filter wafer 203 stacked;
a receiving filter formed by a surface acoustic wave resonator is arranged on the upper surface of the receiving filter wafer 202;
a transmitting filter formed by a bulk acoustic wave resonator is arranged on the upper surface of the transmitting filter wafer 203; the antenna port, the transmitting port and the grounding port of the transmitting filter are all led to the upper surface of the receiving filter wafer 202 through metal posts and are electrically connected with the metal layer of the package substrate 201.
The embodiment adopts a device structure that a packaging substrate 201, a receiving filter wafer 202 and a transmitting filter wafer 203 are sequentially stacked from top to bottom, and the transmitting filter and the receiving filter are arranged on different wafers, wherein the transmitting filter is connected between a transmitting end and an antenna end and comprises a plurality of resonators connected in series and a plurality of resonators connected in parallel, and the resonators in the transmitting filter are bulk acoustic wave resonators; and the receiving filter is connected between the receiving end and the antenna end and comprises a plurality of resonators connected in series and a plurality of resonators connected in parallel, and the resonators in the receiving filter are all acoustic surface wave resonators. The resonators in the transmit filter are laid out on the upper surface of the transmit filter wafer 203 below and the resonators in the receive filter are laid out on the upper surface of the receive filter wafer 202 above; the antenna and TX and ground ports of the transmit filter wafer 203 are brought to the upper surface of the receive filter wafer 202 by copper pillars. When the device structure of the embodiment is adopted, the power capacity of the bulk acoustic wave resonator is higher than that of the surface acoustic wave resonator, so that the power capacity of the hybrid duplexer is greatly improved relative to that of a single surface acoustic wave duplexer; and the transmitting filter and the receiving filter are arranged on different wafers and are overlapped up and down, so that the size of the device can be further reduced, and the miniaturization is realized.
In an alternative embodiment of the present invention, the transmit filter of this embodiment specifically includes:
the four series bulk acoustic wave resonators and the four parallel bulk acoustic wave resonators form an emitter bulk acoustic wave filter with a trapezoid structure;
the first series bulk acoustic wave resonator, the second series bulk acoustic wave resonator, the third series bulk acoustic wave resonator and the fourth series bulk acoustic wave resonator are sequentially connected in series, the other end of the first series bulk acoustic wave resonator is electrically connected with the antenna port, and the other end of the fourth series bulk acoustic wave resonator is electrically connected with the emission port; the first series bulk acoustic wave resonator series or parallel capacitive reactance element may be set as the first series bulk acoustic wave resonator series inductance 205, or the first series bulk acoustic wave resonator parallel capacitance 204;
the first parallel bulk acoustic wave resonator and the second parallel bulk acoustic wave resonator are respectively connected in parallel with the connecting end of the first serial bulk acoustic wave resonator and the second serial bulk acoustic wave resonator and the connecting end of the second serial bulk acoustic wave resonator and the third serial bulk acoustic wave resonator, and are connected in series with the first pair of ground inductors to form a first parallel branch circuit to be grounded;
the third parallel bulk acoustic wave resonator and the fourth parallel bulk acoustic wave resonator are respectively connected in parallel with the connecting end of the third serial bulk acoustic wave resonator and the fourth serial bulk acoustic wave resonator and the connecting end of the fourth serial bulk acoustic wave resonator and the transmitting port, and are connected in series with the second pair of ground inductors to form a second parallel branch circuit to be grounded.
Specifically, as shown in fig. 3a to 3d and fig. 4a to 4d, it can be seen from fig. 4b that after the series inductance, the resonant frequencyfr decreases, resonance frequency and antiresonance frequencyfThe distance between a is far, and the bandwidth between the resonance frequency and the antiresonance frequency is widened; as can be seen from fig. 4c, after the inductance is connected in parallel, the anti-resonant frequency moves to high frequency, the distance between the resonant frequency and the anti-resonant frequency is increased, and the bandwidth between the resonant frequency and the anti-resonant frequency is widened; as can be seen from fig. 4d, after the capacitors are connected in parallel, the antiresonant frequency moves toward the lower frequency, the distance between the resonant frequency and antiresonant frequency is shortened, and the bandwidth between the resonant frequency and antiresonant frequency is narrowed. The series, parallel inductors 205 and the parallel capacitors 204 in this embodiment are not limited to any positions of the series resonators, and only the docking pins 206 need to be changed to corresponding positions, so that the positions of the falling points of the resonant frequency and the antiresonant frequency of the resonators can be flexibly changed, and the flexibility of design is improved.
As shown in fig. 5 and 7, where port 1 is an antenna port, port 2 is a TX port, and 3 is an RX port. The TX bulk acoustic wave filter with a trapezoid structure is formed by four series bulk acoustic wave resonators TS1, TS2, TS3 and TS4 and four parallel bulk acoustic wave resonators TP1, TP2, TP3 and TP4 between the port 1 and the port 2; an RX surface acoustic wave filter is formed by one series surface acoustic wave resonator RS1 and two parallel surface acoustic wave resonators RP1, RP2 and a fifth order DMS between the port 1 and the port 3. The first parallel bulk acoustic wave resonator TP1 and the second parallel bulk acoustic wave resonator TP2 of the TX bulk acoustic wave filter are connected in series with the first pair of ground inductors TL1 to form a first parallel branch; the third parallel bulk acoustic resonator TP3 and the fourth parallel bulk acoustic resonator TP4 are connected in series with the second pair of ground inductors TL2 together to form a second parallel branch.
As shown in fig. 5 and fig. 6a to 6d, taking the first series bulk acoustic wave resonator parallel capacitor 204 as an example, the present embodiment introduces a capacitor 204 element into the transmitting filter, so as to adjust the electromechanical coupling coefficient of the resonator and improve the roll-off of the filter. In this embodiment, the capacitor 204C 1 is disposed on the lower surface of the receiving filter wafer, and is implemented by using an interdigital capacitor, and is electrically connected to two ends of the first serial bulk acoustic wave resonator TS1 through the docking pin 206. In this particular manner, the capacitor 204 element can be introduced at any position of the device, so that the degree of freedom of the device design is greatly increased, and the matching and insertion loss are improved; and the chip size is not increased, and the miniaturization is further realized.
In this embodiment, the grounding inductance with larger coupling influence in the transmitting filter is respectively arranged on the lower surface of the receiving filter wafer 202 and the packaging substrate, wherein the first grounding inductance TL1 is arranged on the lower surface of the receiving filter wafer 202, one end of the first grounding inductance TL1 is electrically connected with the connecting ends of the first parallel bulk acoustic wave resonator TP1 and the second parallel bulk acoustic wave resonator TP2 through the butt joint pin G1, and the other end of the first grounding inductance TL1 is led to the upper surface of the receiving filter wafer 202 through the metal column G1' and is electrically connected with the metal layer of the packaging substrate 201; the second pair of ground inductors TL2 is disposed in the package substrate 201, and one end thereof is electrically connected to the connection ends of the third parallel bulk acoustic resonator TP3 and the fourth parallel bulk acoustic resonator TP4 through the butt joint pin G2, and the other end thereof is led to the lower metal layer of the package substrate 201 through the metal pillar G2'. By this particular way of this embodiment, the distance between the inductances affected by the inductive coupling is pulled apart, reducing the effect of the coupling between the two; and the winding inductance in the packaging substrate 201 is reduced, the number of layers of the packaging substrate 201 is reduced, the thickness of the packaging substrate 201 is thinned, and the size of the device is further reduced.
Note that, the inductance laid out on the lower surface of the receiving filter wafer 202 in this embodiment is not limited to the inductance to ground in this embodiment, and may be connected in parallel in a circuit, and it is only necessary to connect the inductance to a corresponding position through the docking pin 206. As shown in fig. 7, the first series bulk acoustic wave resonator is identical to that of fig. 5 except that the first inductor L1 is connected in parallel to both ends of the first series bulk acoustic wave resonator. As shown in fig. 8a to 8d, a first inductance L1 is connected in parallel across the first series resonator through metal posts 1 and a.
In an alternative embodiment of the present invention, the receiving filter of the present embodiment specifically includes:
a receiving SAW filter composed of a series SAW resonator, two parallel SAW resonators and a fifth-order DMS;
one end of the serial surface acoustic wave resonator is electrically connected with the antenna port, the other end of the serial surface acoustic wave resonator is electrically connected with an even-order IDT at one end of the fifth-order DMS, and an odd-order IDT at the other end of the fifth-order DMS is electrically connected with the receiving port;
one end of the first parallel SAW resonator is electrically connected with the connecting end of the serial SAW resonator and the fifth-order DMS, and the other end of the first parallel SAW resonator is commonly grounded with the odd-order IDT at one end of the fifth-order DMS;
one end of the second parallel SAW resonator is electrically connected with the connection end of the fifth-order DMS and the receiving port, and the other end of the second parallel SAW resonator is commonly grounded with the even-order IDT at one end of the fifth-order DMS.
As shown in fig. 5 and 7, where port 1 is an antenna port, port 2 is a TX port, and 3 is an RX port. An RX surface acoustic wave filter is formed by one series surface acoustic wave resonator RS1 and two parallel surface acoustic wave resonators RP1, RP2 and a fifth order DMS between the port 1 and the port 3.
In an alternative embodiment of the present invention, the lower surface of the receiving filter wafer 202 and the upper surface of the transmitting filter wafer 203 of this embodiment are bonded by a metal seal ring 207 to form a sealed cavity of the transmitting filter.
Specifically, the metal seal cavity 207 in this embodiment is formed by bonding the metal seal cavity 207 on the upper surface of the transmit filter wafer 203 and the metal seal ring 207 on the lower surface of the receive filter wafer 202 through Wafer Level Packaging (WLP), and the seal cavity is formed by the receive filter wafer 202 together, so that the BAW device is sealed in the seal cavity to prevent the chip from being polluted by gas, liquid, and the like.
As shown in fig. 9a to 9d, fig. 9a is a schematic process flow diagram of a bulk acoustic wave resonator on a transmit filter wafer, including a to E, wherein 111 is a substrate, 112 is a cavity, 113 is a bottom electrode, 114 is a piezoelectric layer, 115 is a top electrode, 116 is a protection layer, and 117 is a transmit filter wafer supporting copper pillar or a butt pin. The method comprises the step of sequentially generating a bottom electrode, a piezoelectric layer, a top electrode, a protective layer and a copper column or a butt joint pin required by the emission filter in a substrate of the emission filter wafer. The supporting copper column is a metal sealing ring, and is subsequently subjected to metal bonding with the metal sealing ring on the lower surface of the wafer of the receiving filter to form a sealing cavity of the transmitting filter; the butt joint pin is connected with the butt joint pin on the lower surface of the wafer of the receiving filter, the antenna end, the TX end and the grounding end of the transmitting filter are conducted to the upper surface of the wafer of the receiving filter, or the capacitance inductance element on the lower surface of the wafer of the receiving filter is connected to the corresponding position of the filter. Fig. 9b is a process flow diagram of a capacitor or inductor on the lower surface of a receiving filter wafer, including F-H, where 211 is a substrate, 212 is an electrode, and 213 is a supporting copper pillar or docking pin on the lower surface of the receiving filter wafer. The device comprises a capacitor and inductor element required in a circuit generated on the lower surface of the receiving filter wafer, and a copper supporting column or a butt joint pin of the receiving filter wafer, wherein the copper supporting column and the butt joint pin act in accordance with the transmitting filter wafer. Fig. 9c is a flow chart of a process for bonding a transmit filter wafer and a receive filter wafer, which includes I, bonding the upper surface of the transmit filter wafer and the lower surface of the receive filter wafer together by a sealing ring to form a sealing cavity. And secondly, the butt joint pins are conducted to provide electric connection for the corresponding elements. Fig. 9d is a process flow diagram for creating an RX filter on a bonded receive filter wafer, including J and K, where 312 is the electrode layer. FIG. 9e is a process flow diagram for extracting PAD, including L-N, wherein 413 is copper pillar and 414 is gold ball.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
The principles and embodiments of the present invention have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.
Claims (6)
1. A duplexer, comprising:
the packaging substrate, the receiving filter wafer and the transmitting filter wafer are stacked;
a receiving filter formed by a surface acoustic wave resonator is arranged on the upper surface of the receiving filter wafer;
the upper surface of the transmitting filter wafer is provided with a transmitting filter formed by a bulk acoustic wave resonator; the antenna port, the transmitting port and the grounding port of the transmitting filter are led to the upper surface of the wafer of the receiving filter through metal columns and are electrically connected with the metal layer of the packaging substrate;
the transmit filter comprises in particular:
the four series bulk acoustic wave resonators and the four parallel bulk acoustic wave resonators form an emitter bulk acoustic wave filter with a trapezoid structure;
the first series bulk acoustic wave resonator, the second series bulk acoustic wave resonator, the third series bulk acoustic wave resonator and the fourth series bulk acoustic wave resonator are sequentially connected in series, the other end of the first series bulk acoustic wave resonator is electrically connected with the antenna port, and the other end of the fourth series bulk acoustic wave resonator is electrically connected with the emission port; the first series bulk acoustic wave resonator is connected with a capacitive reactance element in series or in parallel; the capacitive reactance element is arranged on the lower surface of the wafer of the receiving filter and is connected with the first series bulk acoustic wave resonator through a butt joint pin or a metal column;
the first parallel bulk acoustic wave resonator and the second parallel bulk acoustic wave resonator are respectively connected in parallel with the connecting end of the first serial bulk acoustic wave resonator and the second serial bulk acoustic wave resonator and the connecting end of the second serial bulk acoustic wave resonator and the third serial bulk acoustic wave resonator, and are connected in series with the first pair of ground inductors to form a first parallel branch circuit to be grounded;
the third parallel bulk acoustic wave resonator and the fourth parallel bulk acoustic wave resonator are respectively connected in parallel with the connecting end of the third serial bulk acoustic wave resonator and the fourth serial bulk acoustic wave resonator and the connecting end of the fourth serial bulk acoustic wave resonator and the transmitting port, and are connected in series with the second pair of ground inductors to form a second parallel branch circuit to be grounded;
the first pair of grounding inductors are arranged on the lower surface of the receiving filter wafer, one end of each first pair of grounding inductors is electrically connected with the connecting ends of the first parallel-connected acoustic wave resonator and the second parallel-connected acoustic wave resonator through the butt joint pins, and the other end of each first pair of grounding inductors is led to the upper surface of the receiving filter wafer through the metal column and is electrically connected with the metal layer of the packaging substrate.
2. A duplexer as claimed in claim 1, wherein the first series bulk acoustic wave resonator series or parallel capacitive reactance element is specifically:
the first series bulk acoustic wave resonator is connected in series with an inductance, or the first series bulk acoustic wave resonator is connected in parallel with a capacitance.
3. The duplexer of claim 1, wherein the second pair of inductors are disposed in the package substrate, and one end of the second pair of inductors is electrically connected to the connection ends of the second parallel bulk acoustic wave resonator and the third parallel bulk acoustic wave resonator through the butt pins, and the other end of the second pair of inductors is led to the next metal layer of the package substrate through the metal column.
4. A diplexer according to claim 1, characterized in that the receive filter comprises in particular:
a receiving SAW filter composed of a series SAW resonator, two parallel SAW resonators and a fifth-order DMS;
one end of the serial surface acoustic wave resonator is electrically connected with the antenna port, the other end of the serial surface acoustic wave resonator is electrically connected with an even-order IDT at one end of the fifth-order DMS, and an odd-order IDT at the other end of the fifth-order DMS is electrically connected with the receiving port;
one end of the first parallel SAW resonator is electrically connected with the connecting end of the serial SAW resonator and the fifth-order DMS, and the other end of the first parallel SAW resonator is commonly grounded with the odd-order IDT at one end of the fifth-order DMS;
one end of the second parallel SAW resonator is electrically connected with the connection end of the fifth-order DMS and the receiving port, and the other end of the second parallel SAW resonator is commonly grounded with the even-order IDT at one end of the fifth-order DMS.
5. The duplexer of claim 1, wherein the receive filter wafer and the transmit filter wafer are bonded by a metal seal ring to form a metal seal cavity.
6. The duplexer of claim 5, wherein the metal seal ring is electrically connected to the metal layer of the package substrate by flip-chip bonding through the via of the receiving filter wafer.
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