CN116031289A - Semiconductor radio frequency device and preparation method thereof - Google Patents
Semiconductor radio frequency device and preparation method thereof Download PDFInfo
- Publication number
- CN116031289A CN116031289A CN202310089651.1A CN202310089651A CN116031289A CN 116031289 A CN116031289 A CN 116031289A CN 202310089651 A CN202310089651 A CN 202310089651A CN 116031289 A CN116031289 A CN 116031289A
- Authority
- CN
- China
- Prior art keywords
- layer
- ridge
- channel structure
- heterostructure
- radio frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a semiconductor radio frequency device and a preparation method thereof, wherein the semiconductor radio frequency device comprises: a substrate and an n-type source doped layer which are sequentially arranged from bottom to top; the n-type source doped layer is provided with a ridge-shaped channel structure at the middle position, a first heterostructure layer arranged on one side of the ridge-shaped channel structure and a second heterostructure layer arranged on the other side of the ridge-shaped channel structure; a drain electrode is arranged on the ridge-shaped channel structure; a gate dielectric and a gate electrode are arranged on the first heterostructure layer and the second heterostructure layer; a back hole structure is arranged on one side of the substrate, which is far away from the n-type source doping layer, and the n-type source doping layer is exposed; an active electrode is arranged in the back hole structure of the substrate; the first heterostructure layer has a two-dimensional electron gas on sidewalls of the ridge channel structure. The device is of a vertical structure design, and has higher device density compared with a horizontal structure, the gate length and the channel size can be controlled by the film thickness, the requirement on the precision of the lithography equipment is low, and the manufacturing difficulty is low.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a semiconductor radio frequency device and a preparation method thereof.
Background
The traditional GaN HEMT radio frequency device is of a horizontal structure, power amplification is realized by controlling two-dimensional electron gas in an Al (Ga) N/GaN heterojunction interface through a grid, and the working frequency of the device is improved by designing a grid electrode of a T-shaped structure to reduce grid resistance. The higher the working frequency of the device is, the narrower the grid foot of the T-shaped grid structure is required, the mechanical stability of the grid is reduced, the higher the precision requirement on processing equipment is, and the manufacturing difficulty is high. Because the current transmission of the device with the horizontal structure is in the horizontal direction, the occupied area of the device is relatively large.
Disclosure of Invention
The present application aims to provide a semiconductor radio frequency device and a manufacturing method thereof, so as to alleviate the above technical problems.
In a first aspect, embodiments of the present application provide a semiconductor radio frequency device, the semiconductor radio frequency device including: a substrate and an n-type source doped layer which are sequentially arranged from bottom to top; the n-type source doped layer is provided with a ridge-shaped channel structure at the middle position, a first heterostructure layer arranged on one side of the ridge-shaped channel structure and a second heterostructure layer arranged on the other side of the ridge-shaped channel structure; a drain electrode is arranged on the ridge-shaped channel structure; a gate dielectric and a gate electrode are arranged on the first heterostructure layer and the second heterostructure layer; one side of the substrate, which is far away from the n-type source doping layer, is in a back hole structure, and the n-type source doping layer is exposed; an active electrode is arranged in the back hole structure of the substrate; the first heterostructure layer has a two-dimensional electron gas on sidewalls of the ridge channel structure.
In a preferred embodiment of the present application, the ridge channel structure includes: an unintentional doped layer and an n-type drain doped layer disposed on the n-type source doped layer.
In a preferred embodiment of the present application, the plane of the side wall of the ridge-shaped channel structure is parallel to the (0001) plane of the substrate.
In a preferred embodiment of the present application, the gate electrode forms a schottky contact with the first heterostructure layer and the second heterostructure layer at the sidewalls of the ridge channel structure.
In a preferred embodiment of the present application, the schottky contact is located at an end far from the drain electrode and near to the n-type source doped layer.
In a preferred embodiment of the present application, the first heterostructure layer and the second heterostructure layer have the same structure, and are composed of GaN and one of AlGaN, inAlN, alN or InAlGaN.
In a preferred embodiment of the present application, the substrate is a group iii nitride semiconductor having a nonpolar surface.
In a preferred embodiment of the present application, the substrate has a high electrical resistance.
In a preferred embodiment of the present application, the gate dielectric covers a portion of the sidewalls of the first heterostructure layer and the second heterostructure layer.
In a second aspect, an embodiment of the present application further provides a method for preparing a semiconductor radio frequency device, where the method includes: providing a substrate; sequentially growing an n-type source doped layer, an unintentional doped layer and an n-type drain doped layer on a substrate; etching the n-type drain doped layer and the unintentional doped layer to form a ridge-shaped channel structure; forming a heterostructure layer covering the side wall of the ridge channel structure, an n-type drain doped layer in the ridge channel structure and an n-type source doped layer on the ridge channel structure, wherein the heterostructure layer forms two-dimensional electron gas on the side wall of one side of the ridge channel structure; depositing an insulating medium layer on the heterostructure layer; etching part of the insulating dielectric layer on the side wall of the heterostructure layer and the heterostructure layer on the n-type drain doped layer in the ridge-shaped channel structure to form a gate dielectric layer; depositing metal on the gate dielectric layer to form a gate electrode, wherein the gate electrode forms Schottky contact with the first heterostructure layer and the second heterostructure layer on the side wall of the ridge-shaped channel structure; depositing metal on the n-type drain doped layer in the ridge channel structure to form a drain electrode; etching a back hole structure on one side of the substrate far away from the n-type source doping layer to expose the n-type source doping layer; metal is deposited in the back hole structure to form a source electrode.
In the semiconductor radio frequency device and the preparation method thereof provided by the embodiment of the application, the semiconductor radio frequency device comprises: substrate and n-type source doping sequentially arranged from bottom to topA layer; the n-type source doped layer is provided with a ridge-shaped channel structure at the middle position, a first heterostructure layer arranged on one side of the ridge-shaped channel structure and a second heterostructure layer arranged on the other side of the ridge-shaped channel structure; a drain electrode is arranged on the ridge-shaped channel structure; a gate dielectric and a gate electrode are arranged on the first heterostructure layer and the second heterostructure layer; one side of the substrate, which is far away from the n-type source doping layer, is in a back hole structure, and the n-type source doping layer is exposed; an active electrode is arranged in the back hole structure of the substrate; the first heterostructure layer has a two-dimensional electron gas on sidewalls of the ridge channel structure. The semiconductor radio frequency device provided in the embodiment is of a vertical structure design, and has higher device density compared with a horizontal structure, the gate length and the channel size can be controlled by the film thickness, the requirement on the precision of the lithography equipment is low, and the manufacturing difficulty is low. In the device, current is transmitted through two-dimensional electron gas formed on the side wall of the ridge-shaped channel structure, and the device has smaller channel resistance; the source electrode and the drain electrode are both made of n grown in advance + On the GaN doped layer, the contact resistance is small; the short gate long device can be conveniently manufactured; nonpolar GaN can be conveniently grown on large-sized silicon (110) or (112) substrates, with cost advantages.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a prior art semiconductor radio frequency device;
fig. 2 is a schematic structural diagram of a semiconductor radio frequency device according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of another semiconductor radio frequency device according to an embodiment of the present application;
fig. 4 is a transmission characteristic and a transconductance characteristic curve of a semiconductor radio frequency device according to an embodiment of the present application;
fig. 5 is an output characteristic curve of a semiconductor radio frequency device according to an embodiment of the present application;
fig. 6 is a flowchart of a method for manufacturing a semiconductor radio frequency device according to an embodiment of the present application;
fig. 7 is a schematic diagram of a manufacturing process of a semiconductor radio frequency device according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
Referring to fig. 1, a conventional GaN HEMT radio frequency device is of a horizontal structure, and power amplification is achieved by controlling two-dimensional electron gas in an Al (Ga) N/GaN heterojunction interface through a gate. The fabrication of horizontal structure devices requires fine control over doping and device dimensions. For example, in the structure shown in fig. 1, in order to improve the working frequency of the device, on one hand, the gate is made into a T-shaped structure with a narrow bottom (gate foot) and a wide top (gate cap), the length of the gate foot is generally smaller than 100nm, and when the frequency is higher (for example, exceeds 200 GHz), the length of the gate foot needs to be very short (for example, 30 nm), so that the requirement on the precision of processing equipment is very high, and the manufacturing difficulty is high; on the other hand, in order to reduce the resistance between the source and drain channels, the source-drain spacing is often required to be reduced to below 1um, and in order to reduce the contact resistance between the source electrode and the drain electrode, a layer of heavily doped n is usually grown in the source and drain regions + GaN (doping concentration)>10 20 /cm 3 )。
The horizontal structure needs to carry out fine control on doping and device size, has high precision requirement on processing equipment and high manufacturing difficulty, and the defects mainly comprise the following aspects:
1) The manufacturing of the T-shaped grid structure requires high-precision photoetching equipment and photoresist, and when the grid foot is very short, the whole mechanical stability of the T-shaped grid can be influenced, and the manufacturing difficulty is high;
2) The current transmission is in the horizontal direction, and the area of the device is relatively large.
In view of this, the embodiment of the present application provides a semiconductor radio frequency device and a method for manufacturing the same, and in order to facilitate understanding of the embodiment, a semiconductor radio frequency device disclosed in the embodiment of the present application is first described in detail.
Fig. 2 is a schematic diagram of a semiconductor radio frequency device according to an embodiment of the present application, where the semiconductor radio frequency device includes: a substrate 201 and an n-type source doped layer 202 which are sequentially arranged from bottom to top; on the n-type source doped layer 202, a ridge channel structure 203 at a middle position, a first heterostructure layer 204 provided on one side of the ridge channel structure 203, and a second heterostructure layer 205 provided on the other side of the ridge channel structure 203 are provided; a drain electrode 206 is disposed on the ridge channel structure 203; a gate dielectric 207 and a gate electrode 208 are disposed on both the first heterostructure layer 204 and the second heterostructure layer 205; the side of the substrate 201, which is far away from the n-type source doping layer 202, is in a back hole structure, and the n-type source doping layer 202 is exposed; an active electrode 209 is arranged in the back hole structure of the substrate 201; the first heterostructure layer 204 has a two-dimensional electron gas on the sidewalls of the ridge channel structure 203.
The semiconductor radio frequency device provided in the embodiment is of a vertical structure design, and has higher device density compared with a horizontal structure, the gate length and the channel size can be controlled by the film thickness, the requirement on the precision of the lithography equipment is low, and the manufacturing difficulty is low. In the device, current is transmitted through two-dimensional electron gas formed on the side wall of the ridge-shaped channel structure, and the device has smaller channel resistance; the source electrode and the drain electrode are both made of n grown in advance + On the GaN doped layer, the contact resistance is small; the short gate long device can be conveniently manufactured; nonpolar GaN can be conveniently grown on large-sized silicon (110) or (112) substrates, with cost advantages.
In a preferred embodiment of the present application, the ridge channel structure includes: an unintentional doped layer and an n-type drain doped layer disposed on the n-type source doped layer.
In a preferred embodiment of the present application, the plane of the side wall of the ridge-shaped channel structure is parallel to the (0001) plane of the substrate.
In a preferred embodiment of the present application, the gate electrode forms a schottky contact with the first heterostructure layer and the second heterostructure layer at the sidewalls of the ridge channel structure.
In a preferred embodiment of the present application, the schottky contact is located at an end far from the drain electrode and near to the n-type source doped layer.
In a preferred embodiment of the present application, the first heterostructure layer and the second heterostructure layer have the same structure, and are composed of GaN and one of AlGaN, inAlN, alN or InAlGaN.
In a preferred embodiment of the present application, the substrate is a group iii nitride semiconductor having a nonpolar surface.
In a preferred embodiment of the present application, the substrate has a high electrical resistance.
In a preferred embodiment of the present application, the gate dielectric covers a portion of the sidewalls of the first heterostructure layer and the second heterostructure layer.
A specific gallium nitride semiconductor radio frequency device is listed below, and a schematic structural diagram of the device is shown in fig. 3, where the first heterostructure layer and the second heterostructure layer are both AlGaN/GaN layers; the substrate is a nonpolar GaN layer; the n-type source doped layer is a high-resistance GaN layer; the n-type source doped layer and the n-type drain doped layer are n + -a GaN layer.
The gallium nitride semiconductor radio frequency device has the following characteristics:
1) Sequentially comprises a substrate and n from bottom to top + GaN source doped layer, unintentionally doped GaN ridge channel structure (e.g. layer corresponding to 1um thickness in fig. 3) and n above the ridge channel structure + A GaN drain doped layer (layer shown as n+ in fig. 3); the side wall of the ridge-shaped channel structure is parallel to the c-plane of GaN;
2) Ridge channel structure sidewall and n + Depositing an AlGaN barrier layer on the surface of the GaN source doped layer, wherein an AlGaN/GaN heterojunction interface on the side wall along the +c direction is provided with two-dimensional electron gas which is a channel for current transmission;
3) In AlGaN meterSurface deposited SiN x One end of the dielectric layer is contacted with the side walls of the AlGaN barrier layers at two sides of the ridge-shaped channel structure;
4) At the uppermost layer n of the ridge-shaped channel structure + -a drain electrode is provided on the GaN drain doped layer; in SiN x And a gate electrode is arranged on the surface of the dielectric layer, and one end of the gate electrode layer is contacted with the side wall of the AlGaN barrier layer to form Schottky contact.
5) Etching a back hole structure on the back of the substrate to expose the source doping layer; metal is deposited in the back hole structure to form a source electrode.
Fig. 4 is a graph showing the transmission and transconductance characteristics of the specific GaN rf device structure shown in fig. 3. The threshold voltage of the device is about-4V, and the device has better linearity in the range of-3V to 2V of the gate voltage;
fig. 5 is an output characteristic of the specific GaN rf device structure shown in fig. 3.
Based on the above structural embodiment, the embodiment of the present application further provides a method for manufacturing a semiconductor radio frequency device, as shown in fig. 6, where the method specifically includes the following steps:
step S402, providing a substrate;
step S404, an n-type source doped layer, an unintentional doped layer and an n-type drain doped layer are sequentially grown on the substrate;
step S406, etching the n-type drain doped layer and the unintentional doped layer to form a ridge-shaped channel structure; step S408, forming a heterostructure layer covering the side wall of the ridge channel structure, the n-type drain doped layer in the ridge channel structure and the n-type source doped layer on the ridge channel structure, wherein the heterostructure layer forms two-dimensional electron gas on the side wall of one side of the ridge channel structure;
step S410, depositing an insulating medium layer on the heterostructure layer; etching part of the insulating dielectric layer on the side wall of the heterostructure layer and the heterostructure layer on the n-type drain doped layer in the ridge-shaped channel structure to form a gate dielectric layer; depositing metal on the gate dielectric layer to form a gate electrode, wherein the gate electrode forms Schottky contact with the first heterostructure layer and the second heterostructure layer on the side wall of the ridge-shaped channel structure;
step S412, depositing metal on the n-type drain doped layer in the ridge channel structure to form a drain electrode;
step S414, etching a back hole structure on one side of the substrate far from the n-type source doping layer to expose the n-type source doping layer; metal is deposited in the back hole structure to form a source electrode.
Referring to fig. 7, in the implementation, the preparation process of the semiconductor radio frequency device is as follows:
1) Providing a nonpolar gallium nitride template as a substrate;
2) Growing an n-type source doped layer (n) + -GaN)；
3) Growing an unintentionally doped gallium nitride layer (u-GaN) on the n-type source doped layer; growing an n-type drain doped layer (n) + -GaN)；
4) Etching n + The GaN drain doped layer and the u-GaN layer form a ridge-shaped channel structure, and the side wall of the ridge-shaped channel structure is parallel to the c-plane of GaN;
5) Regrowing AlGaN to form a vertical channel;
6) Depositing a dielectric layer;
7) Etching an unnecessary dielectric layer and a top AlGaN layer;
8) And manufacturing a source electrode, a grid electrode and a drain electrode.
The preparation method of the semiconductor radio frequency device provided by the embodiment realizes a vertical structure design method, and compared with a horizontal structure, the method has higher device density, the gate length and the channel size can be controlled by film thickness, the requirement on the precision of the lithography equipment is low, and the manufacturing difficulty is low. In the device, current is transmitted through two-dimensional electron gas formed on the side wall of the ridge-shaped channel structure, and the device has smaller channel resistance; the source electrode and the drain electrode are both made of n grown in advance + On the GaN doped layer, the contact resistance is small; the short gate long device can be conveniently manufactured; nonpolar GaN can be conveniently grown on large-sized silicon (110) or (112) substrates, with cost advantages.
The method provided in the embodiment of the present application has the same implementation principle and technical effects as those of the foregoing structural embodiment, and for the sake of brief description, reference may be made to corresponding matters in the foregoing structural embodiment where no reference is made to the portion of the embodiment of the method.
The relative steps, numerical expressions and numerical values of the components and steps set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the foregoing examples are merely specific embodiments of the present application, and are not intended to limit the scope of the present application, but the present application is not limited thereto, and those skilled in the art will appreciate that while the foregoing examples are described in detail, the present application is not limited thereto. Any person skilled in the art may modify or easily conceive of the technical solution described in the foregoing embodiments, or make equivalent substitutions for some of the technical features within the technical scope of the disclosure of the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application, and are intended to be included in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A semiconductor radio frequency device, the semiconductor radio frequency device comprising: a substrate and an n-type source doped layer which are sequentially arranged from bottom to top; the n-type source doped layer is provided with a ridge-shaped channel structure at the middle position, a first heterostructure layer arranged on one side of the ridge-shaped channel structure and a second heterostructure layer arranged on the other side of the ridge-shaped channel structure; the ridge-shaped channel structure is provided with a drain electrode; a gate dielectric and a gate electrode are arranged on the first heterostructure layer and the second heterostructure layer; a back hole structure is arranged on one side of the substrate, which is far away from the n-type source doping layer, and the n-type source doping layer is exposed; an active electrode is arranged in the back hole structure of the substrate; the first heterostructure layer has a two-dimensional electron gas on a sidewall of the ridge channel structure.
2. The semiconductor radio frequency device of claim 1, wherein the ridge channel structure comprises: an unintentional doped layer and an n-type drain doped layer disposed on the n-type source doped layer.
3. The semiconductor radio frequency device according to claim 1, wherein a plane in which a sidewall of the ridge channel structure is located is parallel to a (0001) plane of the substrate.
4. The semiconductor radio frequency device of claim 1, wherein the gate electrode forms a schottky contact with the first heterostructure layer and the second heterostructure layer at the sidewalls of the ridge channel structure.
5. The semiconductor radio frequency device of claim 4, wherein the schottky contact is located at an end distal to the drain electrode proximate to the n-type source doped layer.
6. The semiconductor radio frequency device according to claim 1, wherein the first heterostructure layer and the second heterostructure layer have the same structure, and are composed of GaN and one of AlGaN, inAlN, alN or InAlGaN.
7. The semiconductor radio frequency device according to claim 1, wherein the substrate is a group iii nitride semiconductor having a nonpolar face surface.
8. The semiconductor radio frequency device according to claim 7, wherein the substrate has a high resistance.
9. The semiconductor radio frequency device of claim 1, wherein the gate dielectric covers a portion of sidewalls of the first heterostructure layer and the second heterostructure layer.
10. A method of fabricating a semiconductor radio frequency device, the method comprising:
providing a substrate;
sequentially growing an n-type source doping layer, an unintentional doping layer and an n-type drain doping layer on the substrate;
etching the n-type drain doped layer and the unintentional doped layer to form a ridge-shaped channel structure;
forming a heterostructure layer on the side wall of the ridge channel structure, an n-type drain doped layer in the ridge channel structure and the n-type source doped layer, wherein the heterostructure layer forms two-dimensional electron gas on one side wall of the ridge channel structure;
depositing an insulating medium layer on the heterostructure layer;
etching part of the insulating dielectric layer on the side wall of the heterostructure layer and the heterostructure layer on the n-type drain doping layer in the ridge channel structure to form a gate dielectric layer;
depositing metal on the gate dielectric layer to form a gate electrode, wherein the gate electrode forms Schottky contact with the first heterostructure layer and the second heterostructure layer on the side wall of the ridge-shaped channel structure;
depositing metal on the n-type drain doped layer in the ridge channel structure to form a drain electrode;
etching a back hole structure on one side of the substrate, which is far away from the n-type source doping layer, and exposing the n-type source doping layer;
and depositing metal in the back hole structure to form a source electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310089651.1A CN116031289A (en) | 2023-01-17 | 2023-01-17 | Semiconductor radio frequency device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310089651.1A CN116031289A (en) | 2023-01-17 | 2023-01-17 | Semiconductor radio frequency device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116031289A true CN116031289A (en) | 2023-04-28 |
Family
ID=86079410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310089651.1A Pending CN116031289A (en) | 2023-01-17 | 2023-01-17 | Semiconductor radio frequency device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116031289A (en) |
-
2023
- 2023-01-17 CN CN202310089651.1A patent/CN116031289A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11830940B2 (en) | Semiconductor device including high electron mobility transistor or high hole mobility transistor and method of fabricating the same | |
| US7728359B2 (en) | Nitride semiconductor based bipolar transistor and the method of manufacture thereof | |
| US20090230430A1 (en) | Field effect transistor | |
| US7439595B2 (en) | Field effect transistor having vertical channel structure | |
| US20130248876A1 (en) | Semiconductor device and method for producing the same | |
| US11742418B2 (en) | Semiconductor device | |
| JP2007142243A (en) | Nitride semiconductor field effect transistor and manufacturing method thereof | |
| US20210083084A1 (en) | Semiconductor device and fabricating method thereof | |
| KR20160132108A (en) | Heterojunction field-effect transistor | |
| KR20210065843A (en) | Si-MOSFET With Wide Bandgap III-V Compound Semiconductor Drain And Method Of Manufacturing The Same | |
| WO2007058265A1 (en) | Bipolar transistor and its manufacturing method | |
| CN114420743A (en) | Reverse blocking high mobility transistor | |
| CN112820648B (en) | Gallium nitride metal oxide semiconductor transistor and preparation method thereof | |
| TWI786422B (en) | High electron mobility transistor and method of fabricating the same | |
| JP5487590B2 (en) | Semiconductor device and manufacturing method thereof | |
| CN115831745A (en) | Preparation method of vertical conduction channel enhanced Si-based GaN-HEMT device | |
| CN114843335A (en) | High-linearity GaN HEMT device based on asymmetric ohm regrowth region and preparation method thereof | |
| CN113035935B (en) | GaN device and preparation method | |
| CN116031289A (en) | Semiconductor radio frequency device and preparation method thereof | |
| US20220336649A1 (en) | High electron mobility transistor and fabrication method thereof | |
| JP6693142B2 (en) | Semiconductor device, electronic component, electronic device, and method for manufacturing semiconductor device | |
| JP2006173241A (en) | Field-effect transistor and its manufacturing method | |
| CN111584619A (en) | GaN device and preparation method | |
| JP2006186336A (en) | Field-effect transistor and manufacturing method thereof | |
| US11935947B2 (en) | Enhancement mode high electron mobility transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |