CN116018048B - Magneto-resistive element, method for manufacturing magneto-resistive element, and magnetic sensor device - Google Patents
Magneto-resistive element, method for manufacturing magneto-resistive element, and magnetic sensor device Download PDFInfo
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Abstract
The invention relates to the technical field of magnetic sensors, and discloses a magnetic resistance element, a preparation method of the magnetic resistance element and a magnetic sensing device. The magneto-resistive element includes a first element portion including one or more first unit elements and a second element portion including one or more second unit elements; the first element portion and the second element portion are connected in series; the first unit element includes: the first reference layer is magnetized and fixed in a first direction, the first free layer with a preset vortex magnetic domain is elliptical, and the ratio of a major axis to a minor axis is 1-2; the second unit element includes: the second reference layer magnetized and fixed in a second direction opposite to the first direction has a second free layer with a preset vortex magnetic domain, and the second free layer is elliptical, and the ratio of the major axis to the minor axis is 1-2. The invention can reduce the influence of anisotropic energy, inhibit hysteresis to a great extent, improve linearity and realize higher sensitivity under the limited size requirement.
Description
Technical Field
The present invention relates to the field of magnetic sensors, and more particularly, to a magnetoresistive element, a method for manufacturing the magnetoresistive element, and a magnetic sensor device.
Background
Common tunneling magneto-resistive (Tunnel magnetoresistance, TMR) linear sensors typically employ CoFeB/MgO/CoFeB systems to achieve high TMR ratios to increase the sensitivity of the sensor. But CoFeB will have a larger hysteresis due to its larger remanence. A common way to improve the linearity of the sensor is to make the reference layer perpendicular to the magnetization direction of the free layer, usually in two ways: rotating the magnetization direction of the free layer by utilizing shape anisotropy through a design of a large length-width ratio; an antiferromagnetic layer is coupled to the free layer to fix the magnetization direction of the free layer using a weak pinning effect. However, the improvement effect is limited, and the magnetic field is still quite residual although the magnetic field can meet certain requirements. The scheme for further improving the linearity is to improve the free layer structure, and a common method is to reduce the thickness of the free layer to enable the free layer to have a superparamagnetic effect, so that the hysteresis is improved, but the sensitivity of the sensor is greatly reduced; another approach is to compound the free layer, i.e., a layer of soft magnetic material such as NiFe on top of the CoFeB free layer, but NiFe affects the crystallization of CoFeB and thus the sensitivity of the sensor.
Disclosure of Invention
The invention mainly aims to provide a magnetic resistance element, a preparation method of the magnetic resistance element and a magnetic sensing device, and aims to solve the technical problems that the linearity of a sensor is improved by reducing the thickness of a free layer or compounding soft magnetic materials on the free layer in the prior art, and the sensitivity of the sensor is affected although hysteresis can be improved to a certain extent.
In order to achieve the above object, the present invention provides a magnetoresistive element including:
a first element section including one or more first unit elements; and
a second element section including one or more second unit elements;
the first element portion and the second element portion are connected in series;
the first unit element includes:
a first reference layer having a first film surface that is magnetized fixed in a first direction in an in-plane direction of the first film surface;
the first free layer is elliptical in shape, the long axis of the first free layer is parallel to the first direction, the short axis of the first free layer is perpendicular to the first direction, the ratio of the long axis to the short axis of the first free layer is 1-2, and the first free layer is provided with a preset vortex magnetic domain;
the second unit element includes:
a second reference layer having a second film surface parallel to the first film surface, which is magnetized in a second direction in an in-plane direction of the second film surface, the second direction being opposite to the first direction;
the second free layer is elliptical in shape, the long axis of the second free layer is parallel to the second direction, the short axis of the second free layer is perpendicular to the second direction, the ratio of the long axis to the short axis of the second free layer is 1-2, and the second free layer is provided with the preset vortex magnetic domain.
Optionally, the first direction is parallel to the easy magnetization direction of the first film surface.
Optionally, the thicknesses of the first free layer and the second free layer are 30-200 nm;
the length of the long axis in the first free layer and the second free layer is 1-20 mu m.
Optionally, the preset vortex state magnetic domain comprises a vortex-anti-vortex state magnetic domain;
the magnetic domains of the first free layer form two first vortex cores around an axis perpendicular to the first film surface, so that the first free layer forms vortex-anti-vortex magnetic domains, the magnetic domains of the first free layer are in vortex states at the first vortex cores, and the magnetic domains of the first free layer are in anti-vortex states between the first vortex cores;
the magnetic domains of the second free layer form two second vortex cores around an axis perpendicular to the second film surface, so that the second free layer forms vortex-anti-vortex magnetic domains, the magnetic domains of the second free layer are in vortex states at the second vortex cores, and the magnetic domains of the second free layer are in anti-vortex states between the second vortex cores.
Optionally, the first unit element further includes a first insulating layer, where the first free layer, the first insulating layer, and the first reference layer are sequentially stacked from top to bottom, and the shapes of the first insulating layer, the first reference layer, and the first free layer are the same;
the second unit element further comprises a second insulating layer, the second free layer, the second insulating layer and the second reference layer are sequentially stacked from top to bottom, and the shapes of the second insulating layer, the second reference layer and the second free layer are the same.
Optionally, a first ferromagnetic layer and a first soft magnetic layer which are in contact with each other are sequentially arranged on one side, away from the first insulating layer, of the first free layer;
a second ferromagnetic layer and a second soft magnetic layer which are in contact with each other are sequentially arranged on one side, far away from the second insulating layer, of the second free layer;
the first soft magnetic layer and the second soft magnetic layer are composed of permalloy, amorphous alloy or microcrystalline alloy.
Optionally, the first soft magnetic layer and the soft magnetic layer are composed of a plurality of elements in Co, fe, ni, al, ga, si, B, cu, mo.
Optionally, the first and second soft magnetic layers are at least one of CoFeSiB, coFeAl, niFeSi and cofegumo.
In order to achieve the above object, the present invention also provides a method for manufacturing a magneto-resistive element, including:
providing a substrate;
depositing a magnetic stack on the substrate, performing magnetic field annealing on the magnetic stack in a first direction or a second direction, and forming the magneto-resistive element after passing through a flow sheet; the magneto-resistive element comprises a first element part comprising more than one first unit element and a second element part comprising more than one second unit element, wherein the magnetization direction of the first unit element is the first direction, and the magnetization direction of the second unit element is the second direction;
the magnetic field annealing includes:
performing primary magnetic field annealing at 320-400 ℃ for 40-80 min;
performing secondary magnetic field annealing for 40-80 min at 200-270 ℃;
and performing magnetic field annealing for 15-40 min at 150-200 ℃.
Optionally, the magnetic stack includes a first magnetic stack and a second magnetic stack, the magnetic stack is deposited on the substrate to form a magnetic stack, the magnetic stack is subjected to magnetic field annealing in a first direction or a second direction, and the magnetoresistive element is formed after passing through a flow sheet, including:
depositing a first magnetic stack and a second magnetic stack on the substrate according to a preset material and a preset thickness;
performing magnetic field annealing on the first magnetic stack in the first direction, and performing configuration in a third direction after flow sheet passing to obtain a first element part;
and performing magnetic field annealing on the second magnetic stack in the first direction, and performing configuration in a fourth direction after flow sheet passing to obtain a second element part, wherein the fourth direction is opposite to the third direction.
To achieve the above object, the present invention also proposes a magnetic sensing device including a magneto-resistive element;
the magneto-resistive element is the magneto-resistive element or the magneto-resistive element manufactured by the manufacturing method.
In the present invention, the magnetoresistive element includes a first element portion and a second element portion, the first element portion and the second element portion are connected in series, the first element portion includes one or more first unit elements, the second element portion includes one or more second unit elements, the first unit elements include a first reference layer and a first free layer, and the second unit elements include a second reference layer and a second free layer. The first free layer and the second free layer are elliptical, the ratio of the major axis to the minor axis is 1-2, the length of the major axis is 1-20 mu m, the thickness is 30-200 nm, and the major axis and the minor axis are magnetized to form vortex-anti-vortex magnetic domains. The invention adopts an elliptic free layer, adopts a low length-width ratio, properly reduces the axial length of a junction region, and simultaneously increases the thickness of the free layer, so that magnetic domains of a first free layer and a second free layer are in a vortex-anti-vortex state, higher sensitivity can be realized compared with a single vortex state shown by a right circular free layer, the influence of anisotropy can be greatly reduced compared with a multi-domain state of a free layer with a large length-width ratio, and hysteresis is greatly inhibited.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a first embodiment of a magnetoresistive element according to the present invention;
FIG. 2 is a schematic diagram of a first reference layer structure of an embodiment of a magneto-resistive element according to the present invention;
FIG. 3 is a schematic diagram of a first free layer structure of an embodiment of a magnetoresistive element according to the present invention;
FIG. 4 is a schematic diagram of a second reference layer structure of an embodiment of a magneto-resistive element according to the present invention;
FIG. 5 is a schematic diagram of a second free layer structure of an embodiment of a magnetoresistive element according to the present invention;
FIG. 6 is a schematic diagram of a low aspect ratio elliptical free layer versus circular free layer for an embodiment of a magnetoresistive element according to the present invention;
FIG. 7 is a schematic cross-sectional view of a second embodiment of a magnetoresistive element according to the present invention;
FIG. 8 is a schematic cross-sectional view of a first unit cell according to an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of a second unit cell according to an embodiment of the present invention;
FIG. 10 is a schematic diagram showing performance comparison of a MR device having different composite free layers according to an embodiment of the present invention;
FIG. 11 is a schematic diagram showing performance comparison of a magnetoresistive device having a composite free layer and a single free layer according to an embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view showing a first unit cell of an embodiment of a magnetoresistive element according to the present invention;
FIG. 13 is a schematic cross-sectional view showing a second unit element of an embodiment of the magnetoresistive element according to the present invention;
FIG. 14 is a flow chart of a method of fabricating a magnetoresistive element according to an embodiment of the present invention;
FIG. 15 is a diagram illustrating low frequency noise contrast of a third annealing process and a second annealing process according to an embodiment of a method for fabricating a magnetoresistive element according to the present invention.
Reference numerals illustrate:
| reference numerals | Name of the name | Reference numerals | Name of the |
|
| 10 | First element part | 1017 | A first |
|
| 20 | |
2011 | |
|
| 101 | |
2011a | |
|
| 201 | |
2012 | Second |
|
| 1011 | |
2012a | Second |
|
| 1011a | |
2012b | Second soft |
|
| 1012 | First |
2013 | |
|
| 1012a | A first |
2014 | Second artificial |
|
| 1012b | First soft magnetic layer | 2015 | A second bottom electrode layer | |
| 1013 | A first insulating |
2016 | Second top |
|
| 1014 | First artificial antiferromagnetic layer | 2017 | A second top electrode layer | |
| 1015 | A first bottom electrode layer | | First direction | |
| 1016 | First top electrode contact layer | D2 | Second direction |
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
An embodiment of the present invention provides a magneto-resistive element, referring to fig. 1, and fig. 1 is a schematic structural diagram of a first embodiment of a magneto-resistive element according to the present invention.
As shown in fig. 1, in the present embodiment, the magnetoresistive element includes a first element portion 10 and a second element portion 20, the first element portion 10 and the second element portion 20 being connected in series, the first element portion 10 including one or more first unit elements 101, and the second element portion 20 including one or more second unit elements 201.
The number of the first unit elements 101 in the first element portion 10 is generally 2 or more, and may be adjusted according to the actual situation, which is not limited in this embodiment. The number of the second unit elements 201 in the second element portion 20 is generally equal to or greater than 2, and may be adjusted according to the actual situation, which is not limited in this embodiment.
It is understood that the number of first unit elements 101 in the first element part 10 and the number of second unit elements 201 in the second element part 20 may be the same. The one or more first unit elements 101 are electrically connected in sequence to form a first magneto-resistive array (not shown), and the one or more second unit elements 201 are electrically connected in sequence to form a second magneto-resistive array (not shown), the magneto-resistive elements may have a wheatstone half-bridge structure. The more than one first unit elements are electrically connected to form a third magneto-resistive array with 2 identical structures, and when the more than one third unit elements are electrically connected to form a fourth magneto-resistive array with 2 identical structures, the magneto-resistive elements can have a Wheatstone full bridge structure. Further, the first unit element 101 includes a first reference layer 1011 and a first free layer 1012, and the second unit element 201 includes a second reference layer 2011 and a second free layer 2012.
It is to be understood that other film layers may be disposed in the first unit element 101 and the second unit element 201 according to requirements, which is not limited in this embodiment.
As shown in fig. 2, the first reference layer 1011 has a first film surface 1011a, and is magnetized and fixed in a first direction D1 in the in-plane direction of the first film surface 1011 a.
It should be understood that the first film surface refers to a plane in which the first reference layer 1011 is located, and the first direction D1 is a magnetization direction of the first reference layer 1011, which is generally a direction specified in an in-plane direction of the first film surface 1011a, and the first direction D1 in this embodiment is parallel to an easy magnetization direction of the first film surface 1011 a.
As shown in fig. 3, the first free layer 1012 has an elliptical shape, a long axis parallel to the first direction D1, a short axis perpendicular to the first direction D1, and a ratio of the long axis to the short axis of 1-2, and has a predetermined vortex domain.
In this embodiment, the thickness of the first free layer 1012 is 30-200 nm, and the length of the long axis of the first free layer 1012 is 1-20 μm, which reduces the axial length and increases the thickness compared to the conventional free layer. The preset vortex state magnetic domain refers to that a magnetic domain in the first free layer 1012 is in a vortex state, in this embodiment, the preset vortex state magnetic domain is a vortex-anti-vortex state magnetic domain, the magnetic domain of the first free layer 1012 forms two first vortex cores around an axis perpendicular to the first film surface 1011a, so that the first free layer 1012 forms a vortex-anti-vortex state magnetic domain, the magnetic domain of the first free layer 1012 is in a vortex state at the first vortex core, and the magnetic domain of the first free layer 1012 is in an anti-vortex state between the first vortex cores.
As shown in fig. 4, the second reference layer 2011 has a second film surface 2011a parallel to the first film surface 1011a, and is magnetized and fixed in a second direction D2 in the in-plane direction of the second film surface 2011a, wherein the second direction D2 is opposite to the first direction D1.
It can be understood that the second film surface refers to a plane where the second reference layer 2011 is located, and the second direction D2 is a magnetization direction of the second reference layer 2011, which is generally a direction specified in an in-plane direction of the second film surface 2011a, where the second direction D2 is opposite to the first direction D1 in the present embodiment, and the second direction D2 is parallel to the easy magnetization direction of the first film surface 1011 a.
As shown in fig. 5, the second free layer 2012 has an elliptical shape, a major axis parallel to the second direction D2, a minor axis perpendicular to the second direction D2, and a ratio of the major axis to the minor axis of 1-2, and has a predetermined vortex magnetic domain.
It should be understood that, in the present embodiment, the thickness of the second free layer 2012 is 30 to 200nm, the length of the long axis in the second free layer 2012 is 1 to 20 μm, which is reduced in axial length and increased in thickness compared to the conventional free layer. In this embodiment, the magnetic domains of the second free layer 2012 form two second vortex cores around an axis perpendicular to the second film surface 2011a, such that the second free layer 2012 forms a vortex-anti-vortex magnetic domain, the magnetic domain of the second free layer 2012 is in a vortex state at the second vortex cores, and the magnetic domain of the second free layer 2012 is in an anti-vortex state between the second vortex cores.
It should be noted that, in the present embodiment, the magnetic domains of the first free layer 1012 and the second free layer 2012 are both vortex-anti-vortex magnetic domains, the first free layer 1012 and the second free layer 2012 both adopt low aspect ratio, the junction area axial length (1 μm-20 μm) is properly reduced, and meanwhile, the composite free layer thickness (30 nm-200 nm) is increased, so that the magnetic domains of the first free layer 1012 and the second free layer 2012 are in anti-vortex state, and compared with the single vortex state presented by the right circular free layer, higher sensitivity can be realized, and compared with the multi-domain state of the free layer with large aspect ratio, the anisotropy energy influence is greatly reduced, and hysteresis is greatly inhibited. Fig. 6 shows the magnetic properties under the same conditions of the magnetoresistive element using the low aspect ratio elliptical free layer of the present embodiment and the magnetoresistive element using the circular free layer of the corresponding size as a comparative example, and it can be seen that the present embodiment can obtain higher sensitivity in a smaller area.
It can be understood that, if the magnetization directions of the first reference layer 1011 and the second reference layer 2011 are opposite, and the other conditions of the first element portion 10 and the second element portion 20 are the same, the embodiment corresponds to flipping the first element portion 10 by 180 ° to obtain the second element portion 20, and the first element portion 10 and the second element portion 20 may be connected in series to form a wheatstone structure.
It should be understood that each first unit element 101 in the first element portion 10 is connected in series, and each second unit element 201 in the second element portion 20 is connected in series.
In the present embodiment, the magnetoresistive element includes a first element portion 10 and a second element portion 20, the first element portion 10 and the second element portion 20 are connected in series, the first element portion 10 includes one or more first unit elements 101, the second element portion 20 includes one or more second unit elements 201, the first unit elements 101 include a first reference layer 1011 and a first free layer 1012, and the second unit elements 201 include a second reference layer 2011 and a second free layer 2012. The first free layer 1012 and the second free layer 2012 have an elliptical shape, a ratio of a major axis to a minor axis of 1-2, a length of 1-20 μm, and a thickness of 30-200 nm, and have vortex-anti-vortex magnetic domains. In this embodiment, the elliptical free layer is adopted, and the low aspect ratio is adopted, so that the axial length of the junction region is properly reduced, and meanwhile, the thickness of the free layer is increased, so that the magnetic domains of the first free layer 1012 and the second free layer 2012 are in a vortex-anti-vortex state, and compared with a single vortex state represented by a right circular free layer, the sensitivity is higher, compared with a multi-domain state of a free layer with a large aspect ratio, the anisotropy energy influence is greatly reduced, and the hysteresis is greatly inhibited.
Referring to fig. 7, fig. 7 is a schematic cross-sectional structure of a second embodiment of the magneto-resistive element of the present invention. Based on the first embodiment described above, the present invention proposes a second embodiment of the magnetoresistive element.
As shown in fig. 7, in this embodiment, the first unit element 101 further includes a first insulating layer 1013, the first free layer 1012, the first insulating layer 1013, and the first reference layer 1011 are stacked in this order from top to bottom, and the first insulating layer 1013, the first reference layer 1011, and the first free layer 1012 have the same shape. The second unit element 201 further includes a second insulating layer 2013, the second free layer 2012, the second insulating layer 2013, and the second reference layer 2011 are sequentially stacked from top to bottom, and the second insulating layer 2013, the second reference layer 2011, and the second free layer 2012 have the same shape.
In this embodiment, since the first free layer 1012 and the second free layer 2012 have an elliptical shape, the length of the major axis is 1 to 20 μm, and the ratio of the major axis to the minor axis is 1 to 2, the first insulating layer 1013, the first reference layer 1011, the second insulating layer 2013, and the second reference layer 2011 have an elliptical shape, the length of the major axis is 1 to 20 μm, and the ratio of the major axis to the minor axis is 1 to 2, wherein the thicknesses of the first free layer 1012 and the second free layer 2012 are 30 to 200nm.
As shown in fig. 8, a first ferromagnetic layer 1012a and a first soft magnetic layer 1012b are sequentially disposed on a side of the first free layer 1012 away from the first insulating layer 1013.
It is understood that the first soft magnetic layer 1012b is disposed over the first ferromagnetic layer 1012a, and that the first soft magnetic layer 1012b may be composed of permalloy or, permalloy or microcrystalline alloy, may be composed of various elements in Co, fe, ni, al, ga, si, B, and is not limited to CoFeSiB, coFeAl, niFeSi and cofegumo.
As shown in fig. 9, a second ferromagnetic layer 2012a and a second soft magnetic layer 2012b are sequentially disposed on a side of the second free layer 2012 remote from the second insulating layer 2013, wherein the second soft magnetic layer 2012b is disposed above the second ferromagnetic layer 2012a, and the second soft magnetic layer 2012b is composed of permalloy, amorphous alloy, or microcrystalline alloy, is composed of a plurality of elements in Co, fe, ni, al, ga, si, B, cu, mo, and is not limited to CoFeSiB, coFeAl, niFeSi or cofegumo.
It should be understood that the first ferromagnetic layer 1012a and the second ferromagnetic layer 2012a may be formed by CoFeB, and the thicknesses of the first soft magnetic layer 1012b and the second soft magnetic layer 2012b may be generally equal to or greater than 20nm, may be 40-150nm, or may be adjusted according to practical situations, which is not limited in this embodiment.
In this embodiment, the composite free layer structure of the first ferromagnetic layer/the first soft magnetic layer has little influence on CoFeB crystallization, and therefore, the sensitivity is reduced due to no attenuation of the TMR ratio, and the linearity is further improved, so that the hysteresis is reduced. Fig. 10 shows a schematic diagram of the magnetic properties of the magnetoresistive element prepared by the present embodiment and the comparison example using NiFe instead of the first soft magnetic layer (CFSB corresponds to the R-H loop of the present embodiment) under the same process parameters, and it can be seen that the TMR value of the final device prepared by the present embodiment can reach 190%, whereas the TMR value of the device prepared by the comparison example can only reach about 160% -170% due to the NiFe affecting the crystallization of CoFeB.
It can be appreciated that, as shown in fig. 11, comparing the magnetic properties of the magnetoresistive devices prepared in this embodiment and the comparative example using CoFeB alone as the free layer, the present embodiment is easier to form the anti-vortex magnetic domain and can achieve a higher linear range and lower hysteresis than using CoFeB alone free layer material.
It should be understood that the first reference layer 1011 and the second reference layer 2011 may be formed of CoFeB, the thickness may be 2-20nm, the first insulating layer 1013 and the second insulating layer 2013 may be formed of MgO, the thickness may be 1-3nm, other materials and other thicknesses may be used, and the present embodiment is not limited thereto.
As shown in fig. 12, a first artificial antiferromagnetic layer 1014 and a first bottom electrode layer 1015 are further disposed below the first reference layer 1011, and a first top electrode contact layer 1016 and a first top electrode layer 1017 are also disposed above the first reference layer 1011.
As shown in fig. 13, a second artificial antiferromagnetic layer 2014 and a second bottom electrode layer 2015 are further disposed under the second reference layer 2011, and a second top electrode contact layer 2016 and a second top electrode layer 2017 are further disposed on the second reference layer 2011.
It should be understood that the first artificial antiferromagnetic layer 1014 and the second artificial antiferromagnetic layer 2014 may have IrMn/CoFe/Ru structures, irMn, coFe, and Ru thicknesses may be 5-20nm, 1-4nm, and 1-2nm, respectively, the first bottom electrode layer 1015 and the second bottom electrode layer 2015 may have Ta/Ru structures, ta and Ru thicknesses may be 5nm and 15nm, the first top electrode contact layer 1016 and the second top electrode contact layer 2016 may have Ta/Ru structures, ta and Ru thicknesses may be 3nm and 5nm, the first top electrode layer 1017 and the second top electrode layer 2017 may have Ti/Al structures, ti and Al thicknesses may be 40nm and 800nm, other materials may be used, and other thicknesses may be set according to practical requirements, which is not limited in this embodiment.
It should be noted that, a plurality of stacked layers including the first bottom electrode layer 1015, the first artificial antiferromagnetic layer 1014, the first reference layer 1011, the first insulating layer 1013, the first free layer 1012, and the first top electrode contact layer 1016 may be disposed in parallel between the first bottom electrode layer and the first top electrode layer, and a plurality of stacked layers including the second bottom electrode layer 2015, the second artificial antiferromagnetic layer 2014, the second reference layer 2011, the second insulating layer 2013, the second free layer 2012, and the second top electrode contact layer 2016 may be disposed in parallel between the second bottom electrode layer and the second top electrode layer.
It will be appreciated that the structure, composition, shape of the first unit element 101 and the second unit element 201 may be the same, except that the magnetization directions of the first reference layer 1011 and the second reference layer 2011 are opposite.
In this embodiment, the first unit element 101 further includes a first insulating layer 1013, a first free layer 1012, a first insulating layer 1013, and a first reference layer 1011 that are sequentially stacked from top to bottom, a first ferromagnetic layer 1012a and a first soft magnetic layer 1012b that are in contact with each other are sequentially disposed on a side of the first free layer 1012 that is away from the first insulating layer 1013, the first soft magnetic layer 1012b may be formed of CoFeSiB, coFeAll, niFeSi or cofegumo, the second unit element 201 further includes a second insulating layer 2013, a second free layer 2012, a second insulating layer 2013, and a second reference layer 2011 that are sequentially stacked from top to bottom, a second ferromagnetic layer 2012a and a second soft magnetic layer 2012b that are in contact with each other are sequentially disposed on a side of the second free layer 2012 that is away from the second insulating layer 2013, and the second soft magnetic layer 2012b may be formed of CoFeSiB, coFeAll, niFeSi or cofegumo. The composite free layer structure adopted by the first free layer 1012 and the second free layer 2012 of this embodiment can more easily form the anti-vortex magnetic domain, can obtain a higher linear range and lower hysteresis, and can obtain higher sensitivity.
An embodiment of the present invention provides a method for manufacturing a magneto-resistive element, and referring to fig. 14, fig. 14 is a schematic flow chart of a first embodiment of a method for manufacturing a magneto-resistive element according to the present invention.
Based on the above embodiments, the method for manufacturing a magnetoresistive element of the present embodiment includes the steps of:
step S10: a substrate is provided.
The method of this embodiment is used to prepare the magnetoresistive element in the above embodiment.
It will be appreciated that the substrate may be selected according to the actual requirements, for example: silicon oxide, which is not limited in this embodiment.
Step S20: and forming a magnetic stack by deposition on the substrate, performing magnetic field annealing on the magnetic stack in a first direction or a second direction, and forming a magneto-resistive element after flow sheet, wherein the magneto-resistive element comprises a first element part containing more than one first unit element and a second element part containing more than one second unit element, the magnetization direction of the first unit element is the first direction, and the magnetization direction of the second unit element is the second direction.
The step S20 includes: depositing a first magnetic stack and a second magnetic stack on the substrate according to a preset material and a preset thickness, performing magnetic field annealing on the first magnetic stack in the first direction, and configuring the first magnetic stack in a third direction after passing through a flow sheet to obtain a first element part; and performing magnetic field annealing on the second magnetic stack in the first direction, and performing flow sheet configuration in a fourth direction to obtain a second element part.
It is understood that the predetermined material and the predetermined thickness refer to the material and the thickness of each layer in the magnetic stack, and may be set according to the requirement. The magnetic stack comprises a first magnetic stack and a second magnetic stack, the first magnetic stack sequentially comprises a first bottom electrode layer, a first artificial antiferromagnetic layer, a first reference layer, a first insulating layer, a first free layer and a first top electrode contact layer from bottom to top, the first bottom electrode layer can use Ta and Ru to form Ta/Ru structures with thicknesses of 5-15nm and 5-30nm respectively, the first antiferromagnetic layer can use IrMn, coFe and Ru to form IrMn/CoFe/Ru structures with thicknesses of 5-20nm, 1-4nm and 1-2nm respectively, the first reference layer can use CoFeB with thicknesses of 2-20nm, the first insulating layer can use MgO with thicknesses of 1-3nm, the first free layer can use CoFeB and CoFeSiB to form CoFeSiB structures with thicknesses of 1-4nm and 40-150nm respectively, the first top electrode contact layer uses Ta and Ru structures with thicknesses of 3-10nm respectively, and the first top electrode contact layer can do not limit practical situations according to the practical situations. The second magnetic stack sequentially comprises a second bottom electrode layer, a second artificial antiferromagnetic layer, a second reference layer, a second insulating layer, a second free layer and a second top electrode contact layer from bottom to top, wherein the second bottom electrode layer can use Ta and Ru to form a Ta/Ru structure, the thicknesses of the second bottom electrode layer are 5-15nm and 5-30nm respectively, the second antiferromagnetic layer can use IrMn, coFe and Ru to form an IrMn/CoFe/Ru structure, the thicknesses of the second antiferromagnetic layer are 5-20nm, 1-4nm and 1-2nm respectively, the second reference layer can use CoFeB, the thicknesses of the second reference layer are 2-20nm, the second insulating layer can use MgO, the thicknesses of the second free layer can use CoFeB and CoFeSiB to form a CoFeSiB structure, the thicknesses of the second top electrode contact layer use Ta and Ru to form a Ta/Ru structure, the thicknesses of the second antiferromagnetic layer are 3-10nm and 2-7nm respectively, the second reference layer can use CoFeB and the CoFeSiB structure, and the CoFeB structure can not be practically limited according to the embodiment.
It should be understood that the first magnetic stack after magnetization annealing has a corresponding magnetization direction, the first artificial antiferromagnetic layer, the first reference layer, the first insulating layer, the first free layer and the first top electrode contact layer having an elliptical shape are etched by a flow sheet, and the first top electrode layer is formed on the first top electrode contact layer by a lift-off process, so as to obtain at least one first unit element, which is configured in a third direction, to obtain a first element portion including more than one first unit element, wherein the number of first unit elements is determined according to an actual situation, and a plurality of stacked first artificial antiferromagnetic layers, first reference layers, first insulating layers, first free layers and first top electrode contact layers may be located between the first bottom electrode layer and the first top electrode layer in the first unit element.
And the second magnetic stack is magnetized and annealed to have a corresponding magnetization direction, an elliptic second artificial antiferromagnetic layer, a second reference layer, a second insulating layer, a second free layer and a second top electrode contact layer are etched through a flow sheet, and a second top electrode layer is formed on the second top electrode contact layer through a stripping process to obtain at least one second unit element, which is configured in a fourth direction to form a second element part containing more than one second unit element, wherein the number of the second unit elements is determined according to actual conditions, and a plurality of laminated second artificial antiferromagnetic layers, second reference layers, second insulating layers, second free layers and second top electrode contact layers can be arranged between the second bottom electrode layer and the second top electrode layer in the second unit element.
The third direction is opposite to the fourth direction, and therefore, the first element portion is arranged in the third direction, and the second element portion is arranged in the fourth direction, and the magnetization directions of the first reference layer and the second reference layer are opposite to each other, and the first direction and the second direction are opposite to each other.
It is understood that the first element portion and the second element portion may have the same structure, composition, and shape, or may be different, and if the first element portion and the second element portion are prepared to have the same structure, composition, and shape, this corresponds to the second element portion being obtained in the fourth direction in which the first element portion is turned 180 ° with respect to the third direction.
Further, the magnetic field annealing includes: performing first magnetic field annealing at 320-400 ℃ for 40-80 min, performing second magnetic field annealing at 200-270 ℃ for 40-80 min, and performing third magnetic field annealing at 150-200 ℃ for 15-40 min.
It should be understood that this embodiment requires three anneals, and the temperature used for the first annealing is usually higher than the crystallization temperature of CoFeB (320-400 ℃), for example: the temperature of 330 ℃ can be flexibly adjusted according to actual requirements, the magnetic field used for the first annealing can be 1T, the temperature can be flexibly adjusted according to actual requirements, the time of the first annealing is within the range of 40-80 min, the temperature can be flexibly adjusted according to actual conditions, and the temperature is not limited by the embodiment. The second annealing is usually performed at a temperature lower than the crystallization temperature of CoFeB and higher than the Nel temperature (200-270 ℃), for example: the temperature of 260 ℃ can be flexibly adjusted according to actual requirements, the magnetic field used in the second annealing can be 1T, the temperature can be flexibly adjusted according to actual requirements, the time of the second annealing is within the range of 40-80 min, the temperature can be flexibly adjusted according to actual conditions, and the temperature is not limited in the embodiment. The temperature used for the third annealing is usually lower (150-200 ℃), for example: 180 ℃, the present embodiment is not limited to this, and the magnetic field used for the third annealing is usually a smaller magnetic field, for example: 200 Oe can be flexibly adjusted according to actual requirements, and the embodiment is not limited to the above, and the time of the third annealing is 15-40 min. The range can be flexibly adjusted according to practical situations, and the embodiment does not limit the range.
In a specific implementation, three annealing processes are adopted, wherein the first annealing is performed for 1h along the direction (magnetic field 1T) perpendicular to the sensitive axis at a temperature (330 ℃) higher than the crystallization temperature of CoFeB, the second annealing is performed for 1h along the direction (magnetic field 1T) of the sensitive axis at a temperature (260 ℃) higher than the Nel temperature of the antiferromagnetic layer, the magnetic moment of the antiferromagnetic layer is inverted, and the third annealing is performed for 0.5h along the direction (perpendicular to the sensitive axis) at a lower temperature (180 ℃) and a smaller magnetic field (200 Oe) to stabilize the magnetic moment of the free layer.
It should be noted that, as shown in the low-frequency noise contrast diagram of the third annealing process and the second annealing process in fig. 15, compared with the second annealing process, the third annealing process used in the embodiment can improve linearity, and noise at low frequency is improved, so that a higher signal-to-noise ratio can be obtained.
In this embodiment, a magnetic stack is formed by providing a substrate, depositing the magnetic stack on the substrate, and forming a magneto-resistive element after magnetic field annealing and reflow, wherein the magneto-resistive element includes a first element portion including one or more first unit elements and a second element portion including one or more second unit elements. By the method, the magnetic domain of the free layer in the magnetic resistance element is in a vortex-anti-vortex state, so that the influence of anisotropy energy is greatly reduced, hysteresis is greatly inhibited, higher sensitivity can be realized under the limited size requirement, arrangement is more flexible, linearity can be improved by a three-time annealing process, noise at low frequency is improved, and higher signal to noise ratio can be obtained.
In order to achieve the above object, the present invention also provides a magnetic sensing device including the above magneto-resistive element, or a magneto-resistive element obtained by using the above method for manufacturing a magneto-resistive element.
It can be understood that, since the magnetic sensing device can adopt the technical schemes of all the embodiments, the magnetic sensing device at least has the beneficial effects brought by the technical schemes of the embodiments, and the description is omitted herein.
It should be understood that the foregoing is illustrative only and is not limiting, and that in specific applications, those skilled in the art may set the invention as desired, and the invention is not limited thereto.
It should be noted that the above-described working procedure is merely illustrative, and does not limit the scope of the present invention, and in practical application, a person skilled in the art may select part or all of them according to actual needs to achieve the purpose of the embodiment, which is not limited herein.
Furthermore, it should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.
Claims (10)
1. A magneto-resistive element, characterized in that the magneto-resistive element comprises:
a first element section including one or more first unit elements; and
a second element section including one or more second unit elements;
the first element portion and the second element portion are connected in series;
the first unit element includes:
a first reference layer having a first film surface that is magnetized fixed in a first direction in an in-plane direction of the first film surface;
the first free layer is elliptical in shape, the long axis of the first free layer is parallel to the first direction, the short axis of the first free layer is perpendicular to the first direction, the ratio of the long axis to the short axis of the first free layer is 1-2, and the first free layer is provided with a preset vortex magnetic domain;
the second unit element includes:
a second reference layer having a second film surface parallel to the first film surface, which is magnetized in a second direction in an in-plane direction of the second film surface, the second direction being opposite to the first direction;
the second free layer is elliptical in shape, the long axis of the second free layer is parallel to the second direction, the short axis of the second free layer is perpendicular to the second direction, the ratio of the long axis to the short axis of the second free layer is 1-2, and the second free layer is provided with the preset vortex magnetic domain.
2. The magnetoresistive element according to claim 1, wherein the first direction is parallel to an easy magnetization direction of the first film face.
3. A magnetoresistive element according to claim 1, characterized in that,
the thickness of the first free layer and the second free layer is 30-200 nm;
the length of the long axis in the first free layer and the second free layer is 1-20 mu m.
4. A magneto-resistive element according to claim 3, wherein the predetermined vortex state magnetic domain comprises a vortex-anti-vortex state magnetic domain;
the magnetic domains of the first free layer form two first vortex cores around an axis perpendicular to the first film surface, so that the first free layer forms vortex-anti-vortex magnetic domains, the magnetic domains of the first free layer are in vortex states at the first vortex cores, and the magnetic domains of the first free layer are in anti-vortex states between the first vortex cores;
the magnetic domains of the second free layer form two second vortex cores around an axis perpendicular to the second film surface, so that the second free layer forms vortex-anti-vortex magnetic domains, the magnetic domains of the second free layer are in vortex states at the second vortex cores, and the magnetic domains of the second free layer are in anti-vortex states between the second vortex cores.
5. A magnetoresistive element according to claim 1, characterized in that,
the first unit element further comprises a first insulating layer, the first free layer, the first insulating layer and the first reference layer are sequentially stacked from top to bottom, and the shapes of the first insulating layer, the first reference layer and the first free layer are the same;
the second unit element further comprises a second insulating layer, the second free layer, the second insulating layer and the second reference layer are sequentially stacked from top to bottom, and the shapes of the second insulating layer, the second reference layer and the second free layer are the same.
6. A magnetoresistive element according to claim 5, characterized in that,
a first ferromagnetic layer and a first soft magnetic layer which are in contact with each other are sequentially arranged on one side, far away from the first insulating layer, of the first free layer;
a second ferromagnetic layer and a second soft magnetic layer which are contacted with each other are sequentially arranged on one side of the second free layer far away from the second insulating layer
The first soft magnetic layer and the second soft magnetic layer are composed of permalloy, amorphous alloy or microcrystalline alloy.
7. The magnetoresistive element according to claim 6, wherein the first soft magnetic layer and the second soft magnetic layer are one of CoFeSiB, coFeAl, niFeSi and cofegumo.
8. A method of manufacturing a magnetoresistive element, characterized in that the method comprises:
providing a substrate;
depositing a magnetic stack on the substrate, performing magnetic field annealing on the magnetic stack in a first direction or a second direction, and forming the magneto-resistive element of any one of claims 1-7 after flow sheet; the magneto-resistive element comprises a first element part comprising more than one first unit element and a second element part comprising more than one second unit element, wherein the magnetization direction of the first unit element is the first direction, and the magnetization direction of the second unit element is the second direction;
the magnetic field annealing includes:
performing primary magnetic field annealing at 320-400 ℃ for 40-80 min;
performing secondary magnetic field annealing for 40-80 min at 200-270 ℃;
and performing magnetic field annealing for 15-40 min at 150-200 ℃.
9. The method of manufacturing of claim 8, wherein the magnetic stack comprises a first magnetic stack and a second magnetic stack, the depositing on the substrate to form a magnetic stack, the magnetic stack being magnetically annealed in a first direction or a second direction to form the magnetoresistive element after flow sheet, comprising:
depositing a first magnetic stack and a second magnetic stack on the substrate according to a preset material and a preset thickness;
performing magnetic field annealing on the first magnetic stack in the first direction, and performing configuration in a third direction after flow sheet passing to obtain a first element part;
and performing magnetic field annealing on the second magnetic stack in the first direction, and performing configuration in a fourth direction after flow sheet passing to obtain a second element part, wherein the fourth direction is opposite to the third direction.
10. A magnetic sensing device, characterized in that the magnetic sensing device comprises a magneto-resistive element;
the magneto-resistive element is a magneto-resistive element according to any one of claims 1 to 7, or is produced by the production method according to claim 8 or 9.
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