CN116014559A - Tunable semiconductor laser - Google Patents
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Abstract
The invention discloses a tunable semiconductor laser, which belongs to the field of semiconductor lasers and comprises: a gain region including an N-type substrate, a lower cladding layer, an active layer, an upper cladding layer, an ohmic contact layer, and an electrode; the power branch region is arranged on the right side of the gain region and comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer and an ohmic contact layer, and is used for dividing the equal power of light into two paths; two curved waveguides respectively arranged on two output light paths of the power branch region, wherein the two curved waveguides comprise an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer and an ohmic contact layer; the front grating region and the rear grating region are respectively arranged on the right sides of the two curved waveguides, each of the front grating region and the rear grating region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode, and gratings are manufactured in the waveguide layer and used for generating different reflection spectrums. The invention can reduce the fluctuation of the optical output power of different wavelengths and obtain larger output power in a wider tuning range.
Description
Technical Field
The invention belongs to the field of semiconductor lasers, and in particular relates to a tunable semiconductor laser.
Background
With the vigorous development of internet technology, the optical communication industry in China presents a high-speed growth situation, and the ever-increasing network capacity puts higher demands on the transmission bandwidth and flexibility of access networks, metropolitan area networks and wide area networks. In order to cope with the explosive growth of traffic, optical communication technologies typified by Dense Wavelength Division Multiplexing (DWDM) technology are becoming a hot spot of research in the scientific and industrial communities. In a DWDM system, optical signals with different carrier wavelengths can be multiplexed into one optical fiber for transmission by adopting a signal multiplexing mode, so that the transmission capacity of the communication system can be effectively increased. Tunable lasers play an important role in DWDM systems, and one tunable semiconductor laser can replace multiple fixed wavelength lasers, greatly reducing the cost of the backup light source and inventory management.
The earliest electrically injected tunable semiconductor lasers were Distributed Bragg Reflector (DBR) lasers proposed in the last 70 th century, and a common three-section DBR laser consisted of an active region, a phase region, and a grating region, each region having an electrode thereon for independent manipulation. The active area realizes light output and power control, the grating area changes the refractive index of the material by using the electro-optic effect so as to change the Bragg wavelength of the grating to realize coarse adjustment of lasing wavelength, and the phase area adjusts the resonance phase to realize fine adjustment. But the refractive index can only be changed by 1-2% by injecting current, which corresponds to the wavelength adjustment range of about 10nm, so the tuning range of a common DBR laser is typically only tens of nanometers, which is insufficient to cover the C-band. To increase the range of wavelength tuning, l.a. colonden, university of california, san ta ballon, teaches a sampled grating distributed bragg reflection (SG-DBR) tunable semiconductor laser, which consists of four parts, a front sampled grating region, a back sampled grating region, an active region and a phase region, wherein the front and back section sampled gratings each have comb-shaped reflection spectra, and the intervals of reflection peaks of the reflection spectra of the front and back section sampled gratings can be made different by reasonably designing parameters of the sampled gratings. The total reflection spectrum of the laser is a form of multiplying two comb-shaped reflection spectrums, wherein aligned reflection peaks have the maximum reflectivity; two adjacent reflection peaks of the main reflection peak are staggered by a point, and the product of the reflectivity is small, so that the reflection is small; the reflection peaks at other places are completely staggered, the product is small, and therefore, the reflection is low. The vernier effect is utilized to greatly improve the wavelength tuning range of the laser.
Since the reflection spectrum envelope of the sampling grating is a sine type function, the peak reflectivity is smaller when the sampling grating is far away from the Bragg wavelength, so that the threshold current and the output optical power of the SG-DBR semiconductor laser can change along with the change of the output wavelength; the wavelength reflectivity of the reflection spectrum edge is low, the threshold gain is large, and the laser cannot be excited under the influence of mode competition, so that the wavelength tunable range of the laser is limited. In order to solve the problem of poor uniformity of the reflection spectrum of the sampled grating, a number of different improved DBR-like tuned lasers have been proposed and demonstrated in succession. The NTT company in Japan in 1996 proposed a four-segment type ultra-structured grating (SSG) -based SSG-DBR semiconductor laser, which is mainly different from the SG-DBR laser in that each sampling period in the front and rear grating regions is a chirped grating, does not contain a blank uniform waveguide region, and can generate a comb-shaped reflection spectrum with flat peak reflectivity; the improved SSG grating equivalent chirped grating to uniformly distributed phase shift with different values can realize the reflection spectrum of flat peak reflectivity through numerical algorithm optimization. However, the SSG-DBR laser process is complex to implement, the manufacture of the chirped grating and the control of the phase shift position and size are very difficult, and a mode missing phenomenon exists in the regulation and control. 2004, book company in the uk proposes a digital supermode laser (DS-DBR) at OFC conference, where the front mirror of the conventional SG-DBR laser is replaced by a plurality of short grating segments which are independently controlled, and a wide flat reflection spectrum is obtained without injecting current, so that a certain wavelength of light needs to be output to inject current into a specific grating segment to realize wavelength selection. The method has lower output power and lower electrode, which is unfavorable for high-speed wavelength switching.
Meanwhile, the invention discovers that the front grating area and the rear grating area of the DBR tunable semiconductor laser are distributed on two sides of the active area, and the output must pass through one of the grating areas, because free carriers are absorbed due to current injection, extra loss is caused, and the light output optical power of different wavelengths has larger fluctuation in the wavelength tuning process, which is not beneficial to practical application.
Disclosure of Invention
Aiming at the defects and improvement requirements of the prior art, the invention provides a tunable semiconductor laser, and aims to solve the technical problem that the output optical power fluctuation of each wavelength channel of the existing DBR tunable semiconductor laser is large during tuning.
To achieve the above object, the present invention provides a tunable semiconductor laser including:
a gain region; the gain region comprises an N-type substrate, a lower cladding layer, an active layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and is used for optical field constraint and optical gain provision;
a power branch region arranged on the right side of the gain region; the power branch region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer and an ohmic contact layer which are sequentially arranged from bottom to top, and is used for dividing the optical equipower output by the gain region into two paths;
the first bending waveguide and the second bending waveguide are respectively arranged on the two output light paths of the power branch region; the first bending waveguide and the second bending waveguide comprise an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer and an ohmic contact layer which are sequentially arranged from bottom to top;
a front grating region disposed on the right side of the first curved waveguide; the front grating region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and a grating is manufactured in the waveguide layer;
and a rear grating region disposed on the right side of the second curved waveguide; the rear grating region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and a grating is manufactured in the waveguide layer; the front and rear grating regions are used to produce different reflection spectra.
Further, gratings manufactured on the waveguide layer in the front grating region and the rear grating region are all digital cascade Bragg gratings; the central grating periods of the two digital cascaded Bragg gratings are the same, and the sampling period lengths are different.
Further, the contact surface between the active layer and the waveguide layer has an inclination angle in the horizontal direction.
Further, the inclination angle is 15 °.
Further, the tunable semiconductor laser provided by the invention further comprises: an independent phase region disposed between the first curved waveguide and the front grating region and/or between the second curved waveguide and the rear grating region;
the independent phase region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top and is used for adjusting the reflection spectrum phase difference of the front grating region and the rear grating region to be 0.
Further, the tunable semiconductor laser provided by the invention further comprises: a common phase region disposed between the power branch region and the gain region;
the common phase region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top and used for finely adjusting the output wavelength.
Further, the outer end surfaces of the front grating area and the rear grating area are plated with antireflection films; the antireflection film is used for reducing the wavelength uncontrollable reflection introduced by the outer end surfaces of the front grating region and the rear grating region.
Further, the power branch region is a 1×2 multimode interference coupler.
Further, the active layer is a semiconductor material, a quantum well, a quantum wire, a quantum dot or a quantum cascade structure.
Further, the waveguide layer is a multiple quantum well material or bulk material.
In general, through the above technical solutions conceived by the present invention, the following beneficial effects can be obtained:
(1) The tunable semiconductor laser provided by the invention has the advantages that the two grating areas are designed at the same end of the active area in a parallel mode, and finally laser is directly output from the end surface of the active area, so that the influence of free carrier absorption of the grating areas is avoided, the fluctuation of optical output power of different wavelengths in the wavelength tuning process can be effectively reduced, and therefore, larger output power can be obtained in a wider tuning range.
(2) The tunable semiconductor laser provided by the invention designs the two grating areas at the same end of the active area in a parallel connection mode, is beneficial to reducing the size of a device and is beneficial to miniaturization of the laser.
(3) In the tunable semiconductor laser provided by the invention, in the preferred scheme, the gratings manufactured in the front grating area and the rear grating area are digital cascade gratings, the peak uniformity of the reflection spectrum is good, the number of channels is increased by several times in the 3dB bandwidth compared with the reflection spectrum of the sampling Bragg grating, the uniformity is greatly improved, and the tuning range can be also wide; meanwhile, the two grating areas are designed at the same end of the active area in a parallel mode, the total reflection spectrum is in a mode of adding the two reflection spectrums, so that the characteristics of all reflection peaks of the two reflection spectrums can be better reserved, the tuning range is ensured, and the peak uniformity and the single longitudinal mode output characteristic of the reflection spectrums are improved.
(4) In the tunable semiconductor laser provided by the invention, in the preferred scheme, the gratings manufactured in the front grating area and the rear grating area are digital cascade gratings, and as no blank grating exists in the digital cascade Bragg gratings, the tunable semiconductor laser has higher reflectivity under the same length, reduces the optical loss in the resonant cavity, and can further improve the output power.
In general, the tunable semiconductor laser provided by the invention can solve the problem of larger fluctuation of output optical power of each wavelength channel when the laser is tuned in the prior art by designing the two grating areas at the same end of the active area in a parallel mode; on the basis, the digital cascade Bragg grating is further manufactured in the front grating region and the rear grating region, so that the single longitudinal mode characteristic is good in a wider tuning range, and the digital cascade Bragg grating has a higher side mode rejection ratio and a larger output power.
Drawings
FIG. 1 is a schematic top view of a tunable semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a schematic side view of a tunable semiconductor laser according to an embodiment of the present invention;
FIG. 3 is a reflection spectrum of a digital cascaded Bragg grating in a front grating region provided by an embodiment of the present invention;
FIG. 4 is a reflection spectrum of a digital cascaded Bragg grating in a back grating region provided by an embodiment of the present invention;
the same reference numbers are used throughout the drawings to reference like elements or structures, wherein:
1-gain area, 2-public phase area, 3-power branch area, 4-bending waveguide, 5-independent phase area, 6-front grating area, 7-back grating area, 8-dissociation plane, 9-antireflection film; 10-electrode, 11-ohmic contact layer, 12-upper cladding layer, 13-waveguide layer, 14-lower cladding layer, 15-N substrate, 16-active layer, 17-front digital cascade Bragg grating, 18-rear digital cascade Bragg grating.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
In the present invention, the terms "first," "second," and the like in the description and in the drawings, if any, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.
In order to solve the technical problem that the output optical power fluctuation of each wavelength channel is larger when the existing DBR tunable semiconductor laser is tuned, the invention provides a tunable semiconductor laser, and the whole idea is that: the relative position relation of each part in the tunable semiconductor laser is improved, two grating areas are designed at the same end of an active area in a parallel mode, the gain part and the mode selection part are respectively positioned at two ends of the laser, and light is directly output from the outer end face of the active area on the basis of ensuring wavelength tuning, so that the influence of free carriers is avoided.
The following are examples.
Example 1:
a tunable semiconductor laser, as shown in fig. 1 and 2, comprising:
the power branch area 3 is arranged on the right side of the gain area and is used for dividing the equal power of the light output by the gain area 1 into two paths;
a common phase region 2 arranged on the right side of the gain region for fine-tuning the output wavelength;
two curved waveguides 4, namely a first curved waveguide and a second curved waveguide, respectively disposed in the two output light paths of the power branching region 3;
a front grating region 6 disposed on the right side of the first curved waveguide;
and a rear grating region 7 disposed on the right side of the second curved waveguide; the front grating region 6 and the rear grating region 7 are used to generate different reflection spectra;
an independent phase region 5 is also arranged between the first bending waveguide and the front grating region 6 and is used for adjusting the reflection spectrum phase difference of the front grating region and the rear grating region to be 0; it should be noted that the arrangement of the independent phase regions is only an alternative embodiment, and in other embodiments of the present invention, the independent phase regions may be arranged between the second curved waveguide and the rear grating region at the same time, or only between the second curved waveguide and the rear grating region.
As shown in fig. 1, the end surfaces of the gain region 1 are dissociation surfaces 8, and the outer end surfaces of the front grating region 6 and the rear grating region 7 are coated with an antireflection film 9, wherein the antireflection film 9 is used for reducing the reflection introduced by the end surfaces of the front grating region 6 and the rear grating region 7. The dissociation surface 8 and the antireflection film 9 are respectively positioned at the left and right ends of the tunable semiconductor laser.
As shown in fig. 2, the gain region 1 includes an N-type substrate 15, a lower cladding layer 14, an active layer 16, an upper cladding layer 12, an ohmic contact layer 11, and an electrode 10, which are disposed in this order from bottom to top;
the common phase region 2 comprises an N-type substrate 15, a lower cladding layer 14, a waveguide layer 13, an upper cladding layer 12, an ohmic contact layer 11 and an electrode 10 which are arranged in sequence from bottom to top;
the power branch region 3 comprises an N-type substrate 15, a lower cladding layer 14, a waveguide layer 13, an upper cladding layer 12 and an ohmic contact layer 11 which are sequentially arranged from bottom to top;
the first bending waveguide and the second bending waveguide have the same structure and comprise an N-type substrate 15, a lower cladding layer 14, a waveguide layer 13, an upper cladding layer 12 and an ohmic contact layer 11 which are sequentially arranged from bottom to top;
the front grating region 6 comprises an N-type substrate 15, a lower cladding layer 14, a waveguide layer 13, an upper cladding layer 12, an ohmic contact layer 11 and an electrode 11 which are sequentially arranged from bottom to top, wherein a grating is manufactured in the waveguide layer;
the rear grating region 7 comprises an N-type substrate 15, a lower cladding layer 14, a waveguide layer 13, an upper cladding layer 12, an ohmic contact layer 11 and an electrode 10 which are sequentially arranged from bottom to top, and a grating is manufactured in the waveguide layer;
the independent phase region 5 comprises an N-type substrate 15, a lower cladding layer 14, a waveguide layer 13, an upper cladding layer 12, an ohmic contact layer 11 and an electrode 10 which are sequentially arranged from bottom to top;
the N-type substrate, the lower cladding layer, the waveguide layer, the upper cladding layer and the ohmic contact layer are shared by all areas; the electrodes of the gain region 1, the common phase region 2, the independent phase region 5, the front grating region 6 and the rear grating region 7 have sufficient electrical isolation.
The active layer 16 in the gain region 1 is used to provide gain to the laser; under the action of injection current of the laser, electrons and holes in the active layer 16 are recombined and radiate photons to form an optical field; the active layer 16 may specifically be a semiconductor material, a quantum well, a quantum wire, a quantum dot, a quantum cascade, or the like, and optionally, in this embodiment, the active layer 16 is a region where the quantum well and the quantum barrier overlap, and the material is AlGaInAs;
the refractive index of the waveguide layer 13 is greater than that of the upper cladding layer 12 and the lower cladding layer 14; the laser light generated by the active layer 16 is confined in the waveguide layer 13, and the light propagates in the waveguide layer 13; waveguide layer 13 may be a multiple quantum well material or a bulk material; as a preferred embodiment, in order to reduce the reflection of light generated by the active layer 16 into the waveguide layer 13 at the contact interface, in this example, the contact surface between the active layer 16 and the waveguide layer 13 has an angle of 15 ° in the horizontal direction, so that the interface reflection can be greatly reduced; it should be noted that, the inclination angle is only a preferred implementation manner of the present embodiment, and should not be construed as the only limitation of the present invention, and in practical application, the inclination angle of the contact surface of the active layer and the waveguide layer in the horizontal direction may be adjusted accordingly in combination with the emission and loss conditions;
the N-type substrate 15 is used as a substrate layer of the whole laser and is also an ohmic contact layer;
the upper cladding layer 12 is used for limiting the mode field of the transverse mode of the laser so as to reduce the divergence angle of the far field of the optical field and limit the injection area of carriers so as to avoid serious lateral diffusion, and the thickness of the upper cladding layer 12 is larger than that of the other layers so as to effectively reduce junction capacitance and non-radiative recombination;
the lower cladding layer 14 is a buffer layer for compensating for substrate defects and further limiting the optical field.
Alternatively, in this embodiment, the power branch waveguide is a 1×2 multimode interference coupler (MMI), and the insertion loss introduced by the power branch waveguide can be reduced by optimization; in other embodiments of the invention, the power branch waveguide may also be implemented using a Y-branch waveguide.
According to the embodiment, through the design, the two grating areas are designed at the same end of the active area in a parallel mode, so that the gain part and the mode selection part are respectively positioned at two ends of the laser, and finally laser is directly output from the end face of the active area, the influence of free carrier absorption of the grating areas is avoided, and fluctuation of light output power of different wavelengths in the wavelength tuning process can be effectively reduced, so that larger output power can be obtained in a wider tuning range, and meanwhile, the size of a device is reduced, and the miniaturization of the laser is facilitated.
As a further preferred embodiment, in this example, the gratings fabricated in the waveguide layers of the front grating region 6 and the rear grating region 7 are in particular digital cascaded bragg gratings. The digital cascade Bragg grating is composed of a plurality of sampling gratings with different grating periods, and the grating periods of the sampling gratingsIn an array of arithmetic progression. The reflection spectrum envelope of the digitally cascaded bragg grating is a superposition of the sampled grating envelopes, so that a flat comb-like reflection spectrum can be obtained. For a target central wavelength lambda c And the interval delta lambda of different-level reflection peaks, and the central grating period lambda c And the expression of the sampling period length Z is as follows:
∧ c ＝λ c /2 g
wherein n is g Is the equivalent refractive index of the material. For ease of description, the digitally cascaded bragg gratings fabricated in the waveguide layers of the front and rear grating regions are referred to as front and rear digitally cascaded bragg gratings 17 and 18, respectively.
Assuming that the digital cascade sampled grating contains M sampled gratings, then the duty cycle of each sampled grating is 1/. Grating period a of each sampling period i The following relation is satisfied:
in this embodiment, the center grating period Λ of the front digital cascade bragg grating 17 and the rear digital cascade bragg grating 18 c The sampling period length Z is the same, but the grating periods of other sampling gratings except the central grating are different.
The reflection spectra of the front and rear digital cascaded bragg gratings in this embodiment are described below in conjunction with specific structural parameters.
As shown in fig. 1 and 2, the tunable semiconductor laser adopts a scheme of deep etching ridge waveguide, the length of a gain region 1 is 450 μm, the length of a common phase region 2 is 200 μm, the length of an independent phase region 5 is 75 μm, the horizontal length of a curved waveguide 4 is 56 μm, the longitudinal offset is 8 μm, and a 1×2 multimode interference coupler (MMI) is selected as a power branch region 3, and the length is 78 μm.
The material of the N-type substrate 15 is N-type InP, and the thickness is 100 mu m; the active layer 16 is a quantum well and quantum barrier overlapping region, the material is AlGaInAs, and the thickness is 86nm; the material of the waveguide layer 13 is InGaAsP, the thickness is 300nm, and the PL wavelength is 1300nm; the upper cladding 12 is made of P-type InP with the thickness of 1.7 mu m; the ohmic contact layer 11 is made of P-type InGaAsP and has a thickness of 180nm.
In this embodiment, the etching depth of the front digital cascade Bragg grating 17 is 100nm, the effective refractive index is 3.4, and the center wavelength lambda thereof is the same as that of the front digital cascade Bragg grating c Taking 6.5nm for the interval delta lambda before different levels of reflection peaks at 1550nm, and calculating the central grating period delta lambda of the sampling grating c 228nm and sampling period Z54.335 nm. The sampling period number N of the front digital cascade sampling grating is 6, the design parameters are shown in table 1, the obtained reflection spectrum is shown in fig. 3, and the mean square error of the peak reflectivity of the reflection spectrum in the range of 1500-1600nm can be obtained to be about 0.038.
Table 1 front digital cascaded bragg grating parameters
The post-digital cascade Bragg grating 18 is designed according to the same design scheme, the interval delta lambda before the different-level reflection peaks is 7nm, and the interval delta lambda is staggered with the reflection peaks of the prior digital cascade Bragg grating, so that the longitudinal mode selection by using the vernier caliper effect is realized. The design parameters are shown in Table 2, and the obtained reflectance spectrum is shown in FIG. 4, and the mean square error of the peak reflectance in the range of 1500-1600nm of the reflectance spectrum can be obtained to be about 0.021.
TABLE 2 post digital cascaded Bragg Grating parameters
The mean square error of the peak reflectivity of the front digital cascade sampling grating and the rear digital cascade sampling grating is reduced by more than 4 times compared with that of the common sampling grating, and a wider tuning range can be obtained.
As can be seen from fig. 3 and 4, the peak uniformity of the reflection spectrum of the digital cascaded bragg grating is good, and thus the tuning range can be made wide; meanwhile, in the embodiment, the two grating areas are designed at the same end of the gain area in a parallel mode, and the total reflection spectrum is in the mode of adding the two reflection spectrums, so that the characteristics of all reflection peaks of the two reflection spectrums can be better reserved, the tuning range is ensured, and meanwhile, the peak uniformity and the single longitudinal mode output characteristic of the reflection spectrums are improved. In addition, since the digital cascade Bragg grating has no blank grating, the digital cascade Bragg grating has higher reflectivity under the same length, reduces the optical loss in the resonant cavity, and can further improve the output power.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. A tunable semiconductor laser, comprising:
a gain region; the gain region comprises an N-type substrate, a lower cladding layer, an active layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and is used for optical field constraint and optical gain provision;
a power branch region arranged on the right side of the gain region; the power branch region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer and an ohmic contact layer which are sequentially arranged from bottom to top, and is used for dividing the optical equipower output by the gain region into two paths;
the first bending waveguide and the second bending waveguide are respectively arranged on the two output light paths of the power branch region; the first bending waveguide and the second bending waveguide comprise an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer and an ohmic contact layer which are sequentially arranged from bottom to top;
a front grating region disposed on the right side of the first curved waveguide; the front grating region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and a grating is manufactured in the waveguide layer;
and a rear grating region disposed on the right side of the second curved waveguide; the rear grating region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and a grating is manufactured in the waveguide layer; the front grating region and the rear grating region are configured to produce different reflection spectra.
2. A tunable semiconductor laser as claimed in claim 1 wherein the gratings fabricated on the waveguide layer in the front and rear grating regions are both digital cascaded bragg gratings; the central grating periods of the two digital cascaded Bragg gratings are the same, and the sampling period lengths are different.
3. A tunable semiconductor laser according to claim 1 or 2, wherein the contact surface of the active layer and the waveguide layer is inclined at an angle in the horizontal direction.
4. A tunable semiconductor laser as claimed in claim 3 wherein the tilt angle is 15 °.
5. The tunable semiconductor laser according to claim 1 or 2, further comprising: an independent phase region disposed between the first curved waveguide and the front grating region and/or between the second curved waveguide and the rear grating region;
the independent phase region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top, and the independent phase region is used for adjusting the reflection spectrum phase difference of the front grating region and the rear grating region to be 0.
6. A tunable semiconductor laser as defined in claim 5, further comprising: a common phase region disposed between the power branch region and the gain region;
the common phase region comprises an N-type substrate, a lower cladding layer, a waveguide layer, an upper cladding layer, an ohmic contact layer and an electrode which are sequentially arranged from bottom to top and used for finely adjusting output wavelength.
7. The tunable semiconductor laser of claim 1 or 2, wherein the outer end surfaces of the front and rear grating regions are coated with an anti-reflection film.
8. A tunable semiconductor laser according to claim 1 or 2, wherein the power branch region is a 1 x 2 multimode interference coupler.
9. The tunable semiconductor laser of claim 1 or 2, wherein the active layer is a semiconductor material, a quantum well, a quantum wire, a quantum dot, or a quantum cascade structure.
10. A tunable semiconductor laser according to claim 1 or 2, wherein the waveguide layer is a multiple quantum well material or a bulk material.
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