CN116013963A

CN116013963A - Semiconductor device and manufacturing method thereof

Info

Publication number: CN116013963A
Application number: CN202310232112.9A
Authority: CN
Inventors: 周成
Original assignee: Nexchip Semiconductor Corp
Current assignee: Nexchip Semiconductor Corp
Priority date: 2023-03-13
Filing date: 2023-03-13
Publication date: 2023-04-25
Anticipated expiration: 2043-03-13
Also published as: CN116013963B

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductors. The semiconductor device includes: a substrate; a plurality of vertical channels disposed on the substrate; a multi-layer gate structure stacked on the substrate, the gate structure disposed around the vertical channel; a plurality of source/drain connection layers stacked on the substrate, the source/drain connection layers being stacked in a cross-stack with the gate structure; the dielectric layer is arranged between the substrate and the adjacent source/drain connecting layer and between the source/drain connecting layer and the adjacent grid structure; the isolation trenches are arranged in the layer where part of the grid electrode structures are located, are positioned on two sides of the vertical channel and extend into the vertical channel; and a conductive plug connected to the source/drain connection layer and the gate structure. The semiconductor device and the manufacturing method thereof provided by the invention improve the production efficiency of the semiconductor device.

Description

Semiconductor device and manufacturing method thereof

Technical Field

The invention belongs to the technical field of semiconductors, and particularly relates to a semiconductor device and a manufacturing method thereof.

Background

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOS) has the characteristics of small voltage driving excitation power, good storage effect of minority carriers, high speed, no secondary breakdown phenomenon, easy parallel operation, good thermal stability and the like, and is widely applied to the fields of switching power supplies, motor control, automobiles, aerospace and the like. However, the MOS transistor currently includes Planar devices such as Planar double-diffused Field effect transistor (Planar MOS), trench double-diffused Field effect transistor (Trench MOS), and Fin Field effect transistor (Fin Field-Effect Transistor, finFET). Increasing the number of MOS transistors necessitates reducing the size of a single MOS transistor to save area, reduce cost and reduce power consumption, while the current MOS transistor size is already approaching a limit and reaches a fabrication process below 10nm, and sophisticated equipment such as an Extreme Ultraviolet (EUV) lithography machine is also required, so that the equipment cost and development difficulty are higher and higher, and the production capacity of the MOS transistor is limited.

Disclosure of Invention

The invention aims to provide a semiconductor device and a manufacturing method thereof, and the semiconductor device and the manufacturing method thereof provided by the invention form a three-dimensional stacked semiconductor device and improve the production efficiency of the semiconductor device.

In order to solve the technical problems, the invention is realized by the following technical scheme:

the present invention provides a semiconductor device including:

a substrate;

a plurality of vertical channels disposed on the substrate;

a multi-layer gate structure stacked on the substrate, the gate structure disposed around the vertical channel;

a plurality of source/drain connection layers stacked on the substrate, the source/drain connection layers being stacked in a cross-stack with the gate structure;

the dielectric layer is arranged between the substrate and the adjacent source/drain connecting layer and between the source/drain connecting layer and the adjacent grid structure;

the isolation trenches are arranged in the layer where part of the grid electrode structures are located, are positioned on two sides of the vertical channel and extend into the vertical channel; and

and a conductive plug connected with the source/drain connection layer and the gate structure.

In an embodiment of the present invention, the depth of the isolation trench is one third to one half of the radial dimension of the vertical trench.

In one embodiment of the present invention, a doped region is disposed on the vertical channel, and the doped region is connected to the source/drain connection layer.

In an embodiment of the present invention, the depth of the doped region is one third to two thirds of the depth of the isolation trench.

In one embodiment of the present invention, the vertical trench is one of a cylindrical silicon or hollow cylindrical fully depleted structure.

In an embodiment of the present invention, the plurality of vertical channels are arranged in a positive direction, a rectangular arrangement or a triangular arrangement.

The invention also provides a manufacturing method of the semiconductor device, which comprises the following steps:

providing a substrate;

forming a plurality of vertical channels on the substrate;

forming a multi-layer gate structure on the substrate, the gate structure being disposed around the vertical channel;

forming a plurality of source/drain connection layers on the substrate, wherein the source/drain connection layers and the gate structure are stacked in a crossing manner;

forming a dielectric layer on the substrate, wherein the dielectric layer is arranged between the substrate and the adjacent source/drain connecting layer and between the source/drain connecting layer and the adjacent gate structure;

forming an isolation trench in a layer where part of the gate structure is located, wherein the isolation trench is located at two sides of the vertical channel and extends into the vertical channel; and

And forming a conductive plug on the substrate, wherein the conductive plug is connected with the source/drain connection layer and the gate structure.

In an embodiment of the present invention, the manufacturing method includes the following steps:

forming a laminated structure of a first dielectric layer, a first sacrificial layer, a second dielectric layer and a second sacrificial layer on the substrate;

forming a plurality of layers of the laminated structure on the substrate; and

and etching the laminated structure, exposing a first dielectric layer in the laminated structure on a part of the substrate, and exposing a second dielectric layer in the laminated structure on a part of the substrate.

In an embodiment of the present invention, the forming step of the source/drain connection layer includes:

forming a first deep opening outside the vertical channel, wherein the first deep opening exposes the first sacrificial layer adjacent to the substrate;

removing the first sacrificial layer in the laminated structure; and

and depositing a conductive material in a space formed by removing the first sacrificial layer to form the source/drain connection layer.

In an embodiment of the present invention, a radial dimension of the first deep opening is greater than a thickness of the first sacrificial layer.

In an embodiment of the present invention, the forming step of the gate structure includes:

Forming a second deep opening outside the vertical channel, wherein the second deep opening exposes the second sacrificial layer adjacent to the substrate;

removing the second sacrificial layer in the laminated structure; and

and depositing a conductive material in a space formed by removing the second sacrificial layer to form the gate structure.

In an embodiment of the present invention, a radial dimension of the second deep opening is greater than a thickness of the second sacrificial layer.

In summary, the semiconductor device and the manufacturing method thereof provided by the invention can form a plurality of semiconductor devices arranged in a stacked manner on a substrate, thereby increasing the production capacity of the semiconductor devices. An isolation trench is formed between a portion of adjacent semiconductor devices to improve crosstalk effects of adjacent semiconductor devices. The obtained semiconductor device has smaller size, increases the switching speed of the semiconductor device and reduces the energy consumption. And the manufacturing method of the semiconductor device is simple, equipment is not required to be added, the existing equipment can realize the manufacturing requirement, and the production cost of enterprises is reduced.

Of course, it is not necessary for any one product to practice the invention to achieve all of the advantages set forth above at the same time.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a semiconductor device according to an embodiment.

FIG. 2 is a schematic diagram of a laminated structure in an embodiment.

FIG. 3 is a top view of a first photoresist layer according to one embodiment.

Fig. 4 is a cross-sectional view of fig. 3 along the X-direction.

Fig. 5 is a sectional view of fig. 3 along the Y direction.

FIG. 6 is a top view of a second photoresist layer according to one embodiment.

Fig. 7 is a cross-sectional view of the first etching of the stacked structure of fig. 3 along the X-direction.

Fig. 8 is a cross-sectional view of the first etching of the stacked structure of fig. 3 along the Y-direction.

Fig. 9 is a cross-sectional view of the second etching of the stacked structure in the X direction of fig. 3.

Fig. 10 is a cross-sectional view of the second etching of the stacked structure of fig. 3 along the Y direction.

Fig. 11 is a cross-sectional view of the third etching of the stacked structure of fig. 3 along the X-direction.

Fig. 12 is a cross-sectional view of the third etching of the stacked structure of fig. 3 along the Y direction.

Fig. 13 is a cross-sectional view of the fourth etching of the stacked structure in the X-direction of fig. 3.

Fig. 14 is a cross-sectional view of the fourth etching of the stacked structure of fig. 3 in the Y direction.

Fig. 15 is a cross-sectional view of the third photoresist layer formed in the X direction of fig. 3.

Fig. 16 is a cross-sectional view of fig. 3 in which an insulating layer is formed in the X direction.

Fig. 17 is a cross-sectional view of fig. 3 in which an insulating layer is formed in the Y direction.

Fig. 18 is a top view of a vertical channel in one embodiment.

Fig. 19 is a cross-sectional view of fig. 18 forming a vertical channel in the X direction.

Fig. 20 is a cross-sectional view of fig. 18 forming a vertical channel in the Y direction.

Fig. 21 is a top view of a first opening and a second opening in an embodiment.

Fig. 22 is a cross-sectional view of fig. 21 forming a first opening in the X direction.

Fig. 23 is a cross-sectional view of fig. 21 forming a second opening in the Y direction.

Fig. 24 is a cross-sectional view of the second sacrificial layer of fig. 21 with a portion removed in the X-direction.

Fig. 25 is a cross-sectional view of the second sacrificial layer of fig. 21 with a portion removed in the Y direction.

Fig. 26 is a cross-sectional view of the groove formed in the X direction of fig. 21.

Fig. 27 is a cross-sectional view of fig. 21 in which a groove is formed in the Y direction.

Fig. 28 is a cross-sectional view of the isolation trench formed in the X direction of fig. 21.

Fig. 29 is a cross-sectional view of the isolation trench formed in the Y direction of fig. 21.

FIG. 30 is a top view of a first deep opening in one embodiment.

Fig. 31 is a cross-sectional view of fig. 30 along the X-direction with the first sacrificial layer removed and the doped regions formed.

Fig. 32 is a cross-sectional view of fig. 30 in the Y direction to remove the first sacrificial layer and form the doped region.

Fig. 33 is a cross-sectional view of the source/drain connection layer formed in the X direction of fig. 30.

Fig. 34 is a cross-sectional view of the source/drain connection layer formed in the Y direction of fig. 30.

Fig. 35 is a cross-sectional view of the source/drain connection layer formed in the X direction of fig. 30.

Fig. 36 is a cross-sectional view of the source/drain connection layer of fig. 30 broken in the Y direction.

FIG. 37 is a top view of a second deep opening in one embodiment.

Fig. 38 is a cross-sectional view of fig. 37 with the second sacrificial layer removed in the X direction.

Fig. 39 is a cross-sectional view of fig. 37 with the second sacrificial layer removed in the Y direction.

Fig. 40 is a cross-sectional view of the gate structure formed in the X direction of fig. 37.

Fig. 41 is a cross-sectional view of the gate structure formed in the Y direction of fig. 37.

Fig. 42 is a cross-sectional view of the broken gate structure of fig. 37 in the X direction.

Fig. 43 is a top view of a conductive plug according to an embodiment.

Fig. 44 is a cross-sectional view of fig. 43 in which a first conductive plug is formed in the Y direction.

Fig. 45 is a cross-sectional view of fig. 43 in which a second conductive plug is formed in the X direction.

Fig. 46 is a circuit diagram of a part of a semiconductor device in an embodiment.

Description of the reference numerals:

10. a substrate; 11. a first deep opening; 12. a second deep opening; 20. a first stack; 21. a second stack; 22. a third stack; 23. a fourth stack; 24. a fifth stack; 101. a first dielectric layer; 102. a first sacrificial layer; 103. a second dielectric layer; 104. a second sacrificial layer; 110. a first photoresist layer; 120. a second photoresist layer; 130. a third photoresist layer; 140. an insulating layer; 150. a vertical channel; 160. a protective layer; 161. a first opening; 162. a second opening; 170. an isolation trench; 171. a groove; 180. a doped region; 190. source/drain connection layers; 200. a first medium; 210. a gate dielectric layer; 220. a gate structure; 230. a second medium; 240. a first conductive plug; 241. and a second conductive plug.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

In the present invention, it should be noted that, as terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., appear, the indicated orientation or positional relationship is based on that shown in the drawings, only for convenience of description and simplification of the description, and does not indicate or imply that the indicated apparatus or element must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, as used herein, are used for descriptive and distinguishing purposes only and are not to be construed as indicating or implying a relative importance.

Referring to fig. 1, in the present invention, a semiconductor device and a method for manufacturing the same are provided, in which a MOS transistor in the semiconductor device is changed from a planar arrangement structure to a vertical stacked structure, so as to form a new three-dimensional structure device. Wherein the multi-layered gate structure 220 and the multi-layered source/drain connection layer 190 are cross-stacked on the substrate 10 in a grid shape, and the number of stacked layers is not limited. The plurality of vertical channels 150 penetrate through the substrate, the vertical channels 150 are distributed in a crossing manner, and the crossing angle can be adjusted according to manufacturing requirements. The source/drain connection layer 190 of two adjacent layers, the gate structure 220 of one layer in the middle of the source/drain connection layer 190 of two adjacent layers and the channel in the interlayer form one MOS transistor, and any two adjacent MOS transistors can press and pinch off the channel through the gate structure 220 between the two adjacent MOS transistors to realize isolation. An isolation trench 170 is added between a portion of the upper and lower MOS transistors to further improve the crosstalk effect of the adjacent MOS transistors, and the isolation trench 170 may extend through the vertical channel 150 so that the upper and lower vertical channels 150 are completely disconnected. The semiconductor device and the manufacturing method thereof provided by the invention can increase the number of MOS transistors in a unit area, break through the limit of the size of the existing substrate, increase the production efficiency, and can be widely applied to static random access memories, logic devices or power devices and the like.

Referring to fig. 1-2, in one embodiment of the present invention, a substrate 10 is provided first, and the substrate 10 may be any material suitable for forming, such as a silicon wafer, a germanium substrate, silicon germanium, silicon-on-insulator or silicon-on-insulator. The invention is not limited to the type and thickness of the substrate 10, and in this embodiment, the substrate 10 is, for example, a silicon wafer, and the substrate 10 is, for example, a P-type silicon wafer or an N-type silicon wafer. A stacked structure is formed on the substrate 10, the stacked structure including a first dielectric layer 101, a first sacrificial layer 102, a second dielectric layer 103, and a second sacrificial layer 104 formed in this order, wherein the first dielectric layer 101 is formed on the substrate 10, the first sacrificial layer 102 is formed on the first dielectric layer 101, the second dielectric layer 103 is formed on the first sacrificial layer 102, and the second sacrificial layer 104 is formed on the second dielectric layer 103. The first dielectric layer 101 and the second dielectric layer 103 are insulating layers such as silicon oxide, the first sacrificial layer 102 is a material having a relatively large etching selectivity to the first dielectric layer 101 such as silicon germanium (SiGe), and the second sacrificial layer 104 is a material having a relatively large etching selectivity to the first dielectric layer 101 and the first sacrificial layer 102 such as silicon nitride or silicon carbide, and is silicon nitride, for example. A first dielectric layer 101, a first sacrificial layer 102, a second dielectric layer 103, and a second sacrificial layer 104 are repeatedly formed on the substrate 10 to form a multilayer stack structure. The dielectric layer and the sacrificial layer may be formed by, for example, a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), a Low Pressure Chemical Vapor Deposition (LPCVD), an atomic layer deposition (Atomic Layer Deposition, ALD), or an epitaxial method (epixy). The invention does not limit the forming modes of the dielectric layer and the sacrificial layer, and can be selected according to the manufacturing conditions.

Referring to fig. 2, in an embodiment of the present invention, the number of stacked layers of the stacked structure is not limited, and may be specifically selected according to the number of layers of the fabricated MOS transistor. In this embodiment, for example, a 5-layer stacked structure including the first stacked layer 20, the second stacked layer 21, the third stacked layer 22, the fourth stacked layer 23, and the fifth stacked layer 24 is taken as an example for explaining the manufacturing process of the semiconductor device. Wherein the fifth stack 24 comprises a first dielectric layer 101, a first sacrificial layer 102 and a second dielectric layer 103, excluding a second sacrificial layer 104. In other embodiments, the top layer stack structure also includes only first dielectric layer 101, first sacrificial layer 102, and second dielectric layer 103, and does not include second sacrificial layer 104. In this embodiment, the thicknesses of the first dielectric layer 101 and the second dielectric layer 103 are, for example, 5nm to 15nm, so as to be used as insulating layers between the substrate 10 and the source/drain connection layer formed later and between the adjacent source/drain connection layer and the gate structure, the thickness of the first sacrificial layer 102 is, for example, 20nm to 30nm, so as to be used for forming the source/drain connection layer later, and the thickness of the second sacrificial layer 104 is, for example, 30nm to 40nm, so as to be used for forming the gate structure later. In other embodiments, the thicknesses of the first dielectric layer 101, the first sacrificial layer 102, the second dielectric layer 103, and the second sacrificial layer 104 may be flexibly set according to the performance requirements of the fabricated MOS transistor.

Referring to fig. 3 to 5, in an embodiment of the invention, fig. 3 is a top view of the first photoresist layer 110, fig. 4 is a cross-sectional view along the X-direction of fig. 3, and fig. 5 is a cross-sectional view along the Y-direction of fig. 3. After forming the multi-layered stack structure, a first photoresist layer 110 is formed on a surface of the stack structure remote from the substrate 10, and a portion of the stack structure is exposed in the Y direction by the first photoresist layer 110 to form a circuit connection region of the gate structure. With the first photoresist layer 110 as a mask, etching is performed by dry etching, wet etching, or a combination of dry etching and wet etching, and in the Y direction, portions of the first sacrificial layer 102 and the second dielectric layer 103 in the fifth stack 24 are removed. And is removed, e.g. by dry etching, and etchedThe gas being, for example, carbon tetrafluoride (CF) ₄ ) Chlorine (Cl) ₂ ) Argon (Ar), trifluoromethane (CHF) ₃ ) Difluoromethane (CH) ₂ F ₂ ) Nitrogen trifluoride (NF) ₃ ) Sulfur hexafluoride (SF) ₆ ) Hydrogen bromide (HBr) or nitrogen (N) ₂ ) And the like. After the etching is completed, the first photoresist layer 110 is removed.

Referring to fig. 5 to 14, in an embodiment of the invention, fig. 6 is a top view of the second photoresist layer 120, fig. 7, 9, 11 and 13 are cross-sectional views of fig. 6 along the X direction, and fig. 8, 10, 12 and 14 are cross-sectional views of fig. 6 along the Y direction. After the first photoresist layer is removed, a second photoresist layer 120 is formed on top of the substrate 10, wherein the second photoresist layer 120 exposes a portion of the substrate 10 in the X-direction and the Y-direction, wherein the X-direction exposes the second dielectric layer 103 in the fifth stack 24 and the Y-direction exposes the first dielectric layer 101 in the fifth stack 24. The second photoresist layer 120 is used as a mask to etch in the direction of the substrate 10, and is performed by dry etching, for example, and the etching gas is one or more of carbon tetrafluoride, oxygen, argon, trifluoromethane, difluoromethane, nitrogen trifluoride, sulfur hexafluoride, hydrogen bromide, and the like. In the etching process, the second dielectric layer 103, the first sacrificial layer 102, the first dielectric layer 101 and the second sacrificial layer 104 in the fourth stack layer 23 in the fifth stack layer 24 are sequentially etched in the X direction by adjusting the etching amount to grasp the dielectric layer as an etching end point, and the first dielectric layer 101 in the fifth stack layer 24, the second sacrificial layer 104, the second dielectric layer 103 and the first sacrificial layer 102 in the fourth stack layer 23 are sequentially etched in the Y direction. The first step is formed, and the width of the step is 20 nm-50 nm, for example.

Referring to fig. 2 and fig. 9 to fig. 10, in an embodiment of the invention, after forming the first step, the second photoresist layer 120 is trimmed, a portion of the second photoresist layer 120 adjacent to the first step is removed, the second dielectric layer 103 in the fifth stack 24 is exposed in the X direction, and the first dielectric layer 101 in the fifth stack 24 is exposed in the y direction. In the present embodiment, the second photoresist layer 120 is removed by dry etching, for example, and the etching gas is oxygen and fluorineA mixed gas of gases. Wherein the fluorine-containing gas is, for example, nitrogen trifluoride (NF) ₃ ) Carbon tetrafluoride (CF) ₄ ) Trifluoromethane (CHF) ₃ ) Or hexafluoroethane (C) ₂ F ₆ ) And the like. Then, the trimmed second photoresist layer 120 is used as a mask to etch the substrate 10, and the dry etching is performed, for example, and the etching gas is one or more of carbon tetrafluoride, oxygen, argon, trifluoromethane, difluoromethane, nitrogen trifluoride, sulfur hexafluoride, hydrogen bromide, etc. In the etching process, the etching amount is adjusted to capture the dielectric layer as an etching end point, and the second dielectric layer 103, the first sacrificial layer 102, the first dielectric layer 101 and the second sacrificial layer 104 in the lower laminated structure in the upper laminated structure are sequentially etched in the X direction, and the first dielectric layer 101 in the upper laminated structure, the second sacrificial layer 104, the second dielectric layer 103 and the first sacrificial layer 102 in the lower laminated structure are sequentially etched in the Y direction. Meanwhile, the first step is formed, and in the etching process, two sacrificial layers and two dielectric layers are etched towards the direction of the substrate 10. Thereby forming two steps on the substrate 10, and each step has a width of 20nm to 50nm, for example.

Referring to fig. 2 and fig. 11 to fig. 14, in an embodiment of the invention, the second photoresist layer 120 is repeatedly trimmed and the stacked structure is etched to form a plurality of steps in the X direction and the Y direction, wherein the width of each step is equal, and the width of each step is 20nm to 50nm. Wherein in the X-direction the first step is etched to the second dielectric layer 103 in the first stack 20 and in the Y-direction the first step is etched to the first dielectric layer 101 in the first stack 20. After the etching is completed, the second photoresist layer 120 is removed.

Referring to fig. 2 and 15, in an embodiment of the present invention, after removing the second photoresist layer, a third photoresist layer 130 is formed on the substrate 10 again, and the third photoresist layer 130 exposes the second dielectric layer 103 in the first stack 20 in the X direction. The third photoresist layer 130 is used as a mask to etch in the direction of the substrate 10, and is performed by dry etching, for example, and the etching gas is one or more of carbon tetrafluoride, oxygen, argon, trifluoromethane, difluoromethane, nitrogen trifluoride, sulfur hexafluoride, hydrogen bromide, and the like. The second dielectric layer 103 and the first sacrificial layer 102 in the first stack 20 are etched sequentially, leaving only one first dielectric layer 101 on the substrate 10. The step adjacent to the source/drain connection layer 190 of the substrate 10 is etched out by etching. After the etching is completed, the third photoresist layer 130 is removed.

Referring to fig. 16 to 17, in an embodiment of the present invention, fig. 16 is a cross-sectional view along the X direction after forming the step in fig. 6, and fig. 17 is a cross-sectional view along the Y direction after forming the step in fig. 6. After the third photoresist layer is removed, an insulating layer 140 is formed on the surface of the substrate 10. The insulating layer 140 is formed by, for example, a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, or an atomic layer deposition method, and the insulating layer 140 covers all structures on the substrate 10. After the deposition of the insulating layer 140 is completed, the insulating layer 140 is subjected to a planarization process, and the planarization process is performed, for example, by chemical mechanical polishing (Chemical Mechanical Polishing, CMP). In this embodiment, the insulating layer 140 is, for example, a silicon oxide material layer, and the thickness of the insulating layer 140 on the second dielectric layer 103 is, for example, 5nm to 15nm. In other embodiments, other insulating materials may be selected for the insulating layer 140, and the thickness of the insulating layer 140 may be selected according to the manufacturing requirements.

Referring to fig. 18 to 20, in an embodiment of the present invention, fig. 18 is a top view of the vertical channel 150, fig. 19 is a cross-sectional view along the X-direction of fig. 18, and fig. 20 is a cross-sectional view along the Y-direction of fig. 18. After the insulating layer 140 is formed, a fourth photoresist layer (not shown) is formed on the insulating layer 140, and the fourth photoresist layer exposes a region where the vertical channel 150 is formed on the stacked structure. The number of vertical channels 150 is not limited, and may be set according to the size of the fabricated MOS transistor, and the arrangement of the vertical channels 150 is not limited, for example, square arrangement, rectangular arrangement, or triangular arrangement. And etching the laminated structure by taking the fourth photoresist layer as a mask. In this embodiment, for example, dry etching is selected, and an etching gas such as one or more of carbon tetrafluoride, oxygen, argon, trifluoromethane, difluoromethane, nitrogen trifluoride, sulfur hexafluoride, hydrogen bromide, or the like is mixed, and is etched from the insulating layer 140 to the substrate 10 to form a deep hole. The invention is not limited to the shape and radial dimensions of the deep hole, such as circular, square or other shapes, and the smaller the radial dimensions of the deep hole, the greater the overall device density and the higher the yield while meeting the performance of the semiconductor device. In one embodiment, the radial dimension of the deep hole is, for example, 100nm to 150nm. In this embodiment, the shape of the deep hole is, for example, circular.

Referring to fig. 19-20, in one embodiment of the present invention, a semiconductor material is deposited in the recess to form a vertical channel 150. The semiconductor material may be a material with a large etching selectivity ratio to the sacrificial layer, such as monocrystalline silicon, polycrystalline silicon or silicon carbide, and the semiconductor material may be N-type doped or P-type doped, or may be doped in part of the vertical channel 150, and the doping types of different vertical channels 150 may be different, which is specifically determined according to the requirements of the prepared NMOS or PMOS. The semiconductor material is formed by a method such as a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, or a selective epitaxial growth method (Selective Epitaxial Growth, SEG). The shape of the vertical channel 150 is not limited in the present invention, and the shape of the vertical channel 150 is, for example, cylindrical silicon or a hollow cylindrical fully depleted structure, i.e., the vertical channel 150 may completely fill a deep hole, or a layer of semiconductor material layer is formed on the inner wall of the deep hole, and the thickness of the semiconductor material layer is, for example, 10 nm-30 nm, and the hollow cylindrical fully depleted structure has strong control capability on the gate, and the vertical channel 150 may be doped with ions, and the doping type may be N-type or P-type. In this embodiment, the vertical channel 150 is, for example, cylindrical silicon, and the vertical channel 150 is, for example, N-doped polysilicon, wherein the doping ions are, for example, N-type impurities such As phosphorus (P), arsenic (As), or aluminum (Al).

Referring to fig. 21 to 23, in an embodiment of the invention, fig. 21 is a top view of the first opening and the second opening, fig. 22 is a cross-sectional view of fig. 21 along the X direction, and fig. 23 is a cross-sectional view of fig. 21 along the Y direction. After the vertical channel 150 is formed, a plurality of first openings 161 or a plurality of second openings 162 are formed around the vertical channel 150, and the plurality of first openings 161 and the plurality of second openings 162 are disposed around the vertical channel 150 in which the isolation trench is formed. The first openings 161 are located around any vertical channel 150 in the X direction, and the first openings 161 extend into the second sacrificial layer 104 in the second stack, but do not penetrate through the second sacrificial layer 104, the number of the first openings 161 is 3-5, and the plurality of first openings 161 are discontinuous, so as to ensure the accuracy of the later trench etching. The second openings 162 are around any vertical channel 150 in the Y direction, and the second openings 162 extend into the second sacrificial layer 104 in the third stack, but do not penetrate through the second sacrificial layer 104, the number of the second openings 162 is 3-5, and the plurality of second openings 162 are discontinuous, so as to ensure accuracy of the later trench etching. In other embodiments, the first opening 161 and the second opening 162 extend into a laminated structure of different layers or into a laminated structure of the same layer, and may be specifically adjusted according to the manufacturing requirements. In the present embodiment, the sizes of the first opening 161 and the second opening 162 are not limited, but it is ensured that the second sacrificial layer 104 in the vicinity of the vertical channel 150 where the isolation trench is formed can be etched clean through these openings, but a part of the second sacrificial layer 104 is left at the periphery of the vertical channel 150, and then serves as a gate structure channel of a laterally adjacent semiconductor device so as to be connected to an external circuit.

Referring to fig. 22 to 23, in an embodiment of the present invention, the shapes of the first opening 161 and the second opening 162 are not limited, for example, arc shapes or bar shapes, and in the present embodiment, the first opening 161 and the second opening 162 are, for example, bent bar shapes. After the first opening 161 and the second opening 162 are formed, a protective layer 160 is deposited in the first opening 161 and the second opening 162. Specifically, the protective layer 160 is made of a material having a large etching selectivity ratio to the second sacrificial layer 104, such as silicon oxide. The protective layer 160 is formed by, for example, a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, or an atomic layer deposition method, and the thickness of the protective layer 160 is, for example, 2nm to 5nm, and meanwhile, the protective layer 160 is ensured not to fill the first opening 161 and the second opening 162, so as to facilitate trench etching. After the protective layer 160 is formed, the protective layer 160 at the bottom of the first opening 161 and the second opening 162 is removed by etching, exposing the second sacrificial layer 104. In this embodiment, the protection layer 160 at the bottoms of the first opening 161 and the second opening 162 is removed by vertical directional etching of dry etching, so that the protection layers on the sidewalls of the first opening 161 and the second opening 162 are not damaged.

Referring to fig. 24 to 25, in an embodiment of the invention, fig. 24 is a cross-sectional view along the X-direction of fig. 21, and fig. 25 is a cross-sectional view along the Y-direction of fig. 21. After removing the protective layer 160 at the bottom of the opening, the second sacrificial layer 104 in the different layers respectively exposed by the first opening 161 and the second opening 162 is etched. In this embodiment, the second sacrificial layer 104 is removed, for example, by wet etching, and the wet etching solution, for example, hot phosphoric acid or the like, is selected to ensure that the etching selectivity of the etching solution to the second sacrificial layer 104 and the protective layer 160, and the second dielectric layer 103 is relatively large. The second sacrificial layer 104 adjacent to the vertical channel 150 is removed by etching, exposing the vertical channel 150, and at the same time, a portion of the second sacrificial layer 104 needs to be left on the periphery of the vertical channel 150, and then the second sacrificial layer 104 serving as a channel of the gate structure of other areas, i.e., the current layer, is not completely removed. In other embodiments, second sacrificial layer 104 may be removed in other ways to ensure that protective layer 160 and second dielectric layer 103 at the bottom of second sacrificial layer 104 are structurally complete.

Referring to fig. 26 to 27, in an embodiment of the invention, fig. 26 is a cross-sectional view along the X-direction of fig. 21, and fig. 27 is a cross-sectional view along the Y-direction of fig. 21. After removing a portion of second sacrificial layer 104, trench 171 is formed by etching vertical channel 150 exposed by second sacrificial layer 104 through first opening 161 and second opening 162. The vertical trench 150 may be etched by dry etching or wet etching, and in the etching process, a mode with a higher etching selectivity ratio to the dielectric layer and the protective layer 160 is selected to avoid damaging the dielectric layer on both sides of the second sacrificial layer 104 and the protective layer 160 on the side wall of the opening. In the present embodiment, the trench 171 is formed by, for example, wet etching, and the etching liquid is, for example, a mixed acid of hydrofluoric acid and nitric acid or the like. The depth of the trenches 171 to be formed is required to meet the isolation requirements of the adjacent semiconductor devices at this location, and in one embodiment of the present invention, the depth of the trenches 171 is, for example, one third to one half of the radial dimension of the vertical trenches 150, i.e., the trenches 171 on both sides of the vertical trenches 150 may or may not be etched through the vertical trenches 150, while ensuring that the depth of the trenches 171 in the vertical trenches 150 is greater than the depth of the doped regions subsequently formed in the vertical trenches 150.

Referring to fig. 26 to 29, in an embodiment of the invention, fig. 28 is a cross-sectional view along the X-direction of fig. 21, and fig. 29 is a cross-sectional view along the Y-direction of fig. 21. After forming the trench 171, an isolation medium is formed within the trench 171 to form an isolation trench 170. The isolation medium is, for example, an insulating material such as silicon oxide, which is the same as the material of the dielectric layer, or another insulating material, which is different from the material of the dielectric layer, may be selected, and the invention is not limited. The isolation medium is formed by a method such as an ion enhanced chemical vapor deposition method, a low-pressure chemical vapor deposition method or atomic layer deposition method. In the process of forming the isolation trench 170, the opening of the second sacrificial layer 104, and the first opening 161 and the second opening 162 in the process of forming the trench 171 are filled until the isolation medium is completely filled, ensuring that the isolation medium is flush with the insulating layer 140 on both sides of the first opening 161 and the second opening 162. By forming the isolation trench 170, the crosstalk effect of adjacent MOS transistors is further improved, and the anti-interference capability of the semiconductor device is improved.

Referring to fig. 29 to 32, in an embodiment of the present invention, fig. 30 is a top view of the first deep opening 11, fig. 31 is a cross-sectional view along the X direction of fig. 30, and fig. 32 is a cross-sectional view along the Y direction of fig. 30. In a direction parallel to the X direction, a plurality of first deep openings 11 are formed adjacent to the vertical channel 150, and the plurality of first deep openings 11 are equally spaced. The shape of the first deep opening 11 is not limited by the present invention, and the first deep opening 11 is, for example, rectangular, circular, polygonal, or arc-shaped, and in the present embodiment, the shape of the first deep opening 11 is, for example, rectangular. In an embodiment of the present invention, the width of the first deep opening 11 is, for example, 40nm to 70nm, i.e., the width of the first deep opening 11 is larger than the thickness of the first sacrificial layer 102. The first deep opening 11 is formed by dry etching, for example, and the first deep opening 11 is etched into the first sacrificial layer 102 in the first stack to ensure that the first sacrificial layer 102 around the vertical channel 150 is completely etched.

Referring to fig. 29 to 32, in an embodiment of the invention, after forming the first deep opening 11, the first sacrificial layer 102 around the vertical channel 150 is removed through the first deep opening 11. The first sacrificial layer 102 is removed, for example, by dry etching or wet etching, and specifically is removed in a manner of having a higher etching selectivity with the first dielectric layer 101, the second dielectric layer 103, the second sacrificial layer 104 and the vertical channel 150, so as to avoid damaging the first dielectric layer 101, the second dielectric layer 103, the second sacrificial layer 104 and the vertical channel 150. In this embodiment, the first sacrificial layer 102 is removed, for example, by wet etching, and the etching solution is, for example, a mixed acid of hydrofluoric acid, hydrogen peroxide and acetic acid, so as to ensure that the first sacrificial layer 102 is completely etched. After the first sacrificial layer 102 is completely etched, the exposed vertical channel 150 is doped to form a doped region 180 to serve as a source doped region and a drain doped region of the semiconductor device, and the depth of the doped region 180 is, for example, one third to two thirds of the depth of the isolation trench 170. The doping method for the vertical channel can be selected according to the manufacturing requirement, for example, solid source diffusion, liquid source diffusion, gaseous source diffusion or the like. The ion doping type of the doped region 180 is also selected according to the type of the semiconductor device to be fabricated, and the ion doping type of the doped region 180 is, for example, N-type impurity such As phosphorus (P) or arsenic (As) when fabricating NMOS transistor, P-type impurity such As ion doping type boron (B) or gallium (Ga) of the doped region 180 when fabricating PMOS transistor, and the doping amount of the impurity is, for example, greater than 1×10 ¹⁵ atoms/cm ² Wherein the unit of doping amount is expressed as the number of atoms implanted with impurity atoms per unit area, abbreviated as atoms/cm ² . At the same time, it is ensured that the ion doping type of the doped region 180 is different from the doping type of the vertical channel 150 material. In this embodiment, the ion doping type of the doped region 180 is P-type, for example.

Referring to fig. 30 and 33-34, in an embodiment of the invention, fig. 33 is a cross-sectional view along the X-direction of fig. 30, and fig. 34 is a cross-sectional view along the Y-direction of fig. 30. After the doped region 180 is formed, the space formed by removing the first sacrificial layer is backfilled to form a source/drain connection layer 190. The source/drain connection layer 190 is made of a material with good filling ability and conductivity, for example, tungsten, silver, copper, or the like. In this embodiment, the material of the source/drain connection layer 190 is, for example, tungsten metal. And the source/drain connection layer 190 is formed by, for example, a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, or an atomic layer deposition method. And during the formation, the source/drain connection layer 190 is formed between the first dielectric layer 101 and the second dielectric layer 103 and on the sidewall of the first deep opening 11, the width of the first deep opening 11 is greater than the thickness of the first sacrificial layer, and the source/drain connection layer 190 does not completely fill the first deep opening 11.

Referring to fig. 30 and 35-36, in an embodiment of the present invention, fig. 35 is a cross-sectional view along the X-direction of fig. 30, and fig. 36 is a cross-sectional view along the Y-direction of fig. 30. After the deposition of the source/drain connection layer 190 is completed, the source/drain connection layer 190 on the sidewall of the first deep opening 11 is etched away, and the etching time is prolonged, so that the source/drain connection layer 190 around the first deep opening 11 is separated. The etching method of the source/drain connection layer 190 is, for example, dry etching or wet etching, and specifically, an etching method with a high etching selectivity between the source/drain connection layer 190 and the dielectric layer is selected to avoid damaging the dielectric layer. In this embodiment, the etching method of the source/drain connection layer 190 is, for example, wet etching, and the wet etching liquid is, for example, mixed acid of nitric acid, sulfuric acid and acetic acid. During the etching process, the etching amount needs to ensure that the source/drain connection layers 190 are separated, and other positions of the source/drain connection layers 190 are prevented from being disconnected or damaged to the source/drain connection layers 190 near the channel due to the excessive etching amount. After the etching is completed, the source/drain connection layer 190 in the Y direction is disconnected. After etching, the separation portion of the source/drain connection layer 190 and the first deep opening 11 are backfilled, for example, by a method such as a plasma enhanced chemical vapor deposition method, a low-pressure chemical vapor deposition method, or an atomic layer deposition method, and the backfilled first medium 200 is, for example, a silicon oxide insulating material which is the same as the material of the dielectric layer, or is another insulating layer. After backfilling, the first dielectric 200 is flush with the insulating layer 140 on both sides of the first deep opening 11.

Referring to fig. 36 to 39, in an embodiment of the present invention, fig. 37 is a top view of the second deep opening 12, fig. 38 is a cross-sectional view of fig. 37 along the X direction, and fig. 39 is a cross-sectional view of fig. 37 along the Y direction. In a direction parallel to the Y direction, a plurality of second deep openings 12 are formed adjacent to the vertical channel 150, and the plurality of second deep openings 12 are equally spaced. The shape of the second deep opening 12 is not limited to the present invention, and the second deep opening 12 is, for example, rectangular, circular, polygonal, or arc, and in the present embodiment, the shape of the second deep opening 12 is, for example, rectangular, and the second deep opening 12 is vertically arranged with the first deep opening 11. The opening size of the second deep opening 12 needs to meet the requirement of the subsequent deposition of the source/drain connection layer, and in an embodiment of the present invention, the width of the second deep opening 12 is, for example, 50nm to 70nm, i.e., the width of the second deep opening 12 is greater than the thickness of the second sacrificial layer 104. Wherein the second deep opening 12 is formed, for example, by dry etching, and the second deep opening 12 is etched into the second sacrificial layer 104 in the first stack to ensure that the second sacrificial layer 104 around the vertical channel 150 is completely etched.

Referring to fig. 38 to 39, in an embodiment of the present invention, after forming the second deep opening 12, the second sacrificial layer 104 surrounding the vertical channel 150 is removed through the second deep opening 12. The second sacrificial layer 104 is removed, for example, by dry etching or wet etching, and specifically is removed in a manner of having a higher etching selectivity with the first dielectric layer 101, the second dielectric layer 103, the first sacrificial layer 102, the source/drain connection layer 190 and the vertical channel 150, so as to avoid damaging the first dielectric layer 101, the second dielectric layer 103, the first sacrificial layer 102, the source/drain connection layer 190 and the vertical channel 150. In this embodiment, the second sacrificial layer 104 is removed, for example, by wet etching, and the etching solution, for example, hot phosphoric acid, ensures that the second sacrificial layer 104 is completely etched.

Referring to fig. 37 and 40-41, in an embodiment of the invention, fig. 40 is a cross-sectional view along the X-direction of fig. 37, and fig. 41 is a cross-sectional view along the Y-direction of fig. 37. After removing the second sacrificial layerAnd removing the space formed by the second sacrificial layer, and backfilling to form the gate structure 220. A gate dielectric layer 210 is formed around the gate structure 220, specifically, a layer of gate dielectric layer 210 is formed on the exposed sidewalls of the first dielectric layer 101 and the second dielectric layer 103 through the second deep opening 12 by a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, or an atomic layer deposition method, and the gate dielectric layer 210 is, for example, hafnium oxide (HfO ₂ ) Hafnium oxynitride (HfON), zirconium oxide (ZrO 2), zirconium oxynitride (ZrON), zirconium oxynitride silicate (ZrSiON), hafnium silicate (HfSiO), hafnium aluminum oxide (HfAlO), or the like, and the thickness of the gate dielectric layer 210 is, for example, 2nm to 5nm. Then, the same deposition method is used to replace the deposition source and deposit the gate structure 220, and the gate structure 220 is, for example, a gate material with better filling capability and conductivity. In this embodiment, the gate structure 220 is made of, for example, a metal gate material, and further made of, for example, tungsten until the gate structure 220 fills the space formed by the second sacrificial layer. During deposition, the width of the second deep opening 12 is greater than the thickness of the second sacrificial layer, and the gate structure does not completely fill the second deep opening 12.

Referring to fig. 37 and 42, fig. 42 is a cross-sectional view along the X-direction of fig. 37 in an embodiment of the invention. After the gate structure deposition is completed, the gate structure on the sidewall of the second deep opening 12 is etched away, and the etching time is prolonged, so that the gate structure 220 around the second deep opening 12 is separated. The etching method of the gate structure 220 is, for example, dry etching or wet etching, and specifically, an etching method with a high etching selectivity between the gate structure 220 and the dielectric layer is selected to avoid damaging the dielectric layer. In this embodiment, the etching method of the gate structure 220 is, for example, wet etching, and the wet etching solution is, for example, mixed acid of nitric acid, sulfuric acid and acetic acid. During the etching process, the etching amount needs to ensure that the gate structures 220 are separated, and other positions of the gate structures 220 are prevented from being disconnected or damaging the gate structures 220 near the channel due to the excessive etching amount. After the etching is completed, the gate structure 220 in the X direction is disconnected. After etching, the spacers of the gate structure 220 and the second deep openings 12 are backfilled, for example, by a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, an atomic layer deposition method, or the like, and the backfilled second medium 230 is, for example, a silicon oxide insulating material that is the same as the medium layer, or is another insulating material. After backfilling, the second dielectric 230 is flush with the insulating layer 140 on either side of the second deep opening 12. Wherein, adjacent source/drain connection layers 190, gate structures 220 between adjacent source/drain connection layers 190, and vertical channels 150 in the interlayer constitute one MOS transistor, any two adjacent MOS transistors can pinch off the channels by the gate structures 220 therebetween to achieve isolation. And the adjacent source/drain connection layer 190 and the gate structure 220 are isolated by the first dielectric layer 101 or the second dielectric layer 103, and the thicknesses of the first dielectric layer 101, the second dielectric layer 103, the source/drain connection layer 190 and the gate structure 220 are smaller, so that the size of the MOS transistor can be reduced, the switching speed of the MOS transistor can be increased, and the energy consumption can be reduced.

Referring to fig. 43 to 45, in an embodiment of the invention, fig. 43 is a top view of a conductive plug, fig. 44 is a cross-sectional view along an X direction of fig. 43, and fig. 45 is a cross-sectional view along a Y direction of fig. 43. After forming the gate structure, a plurality of conductive plugs are formed on the substrate 10. Specifically, a patterned photoresist layer (not shown) is formed on the insulating layer 140, where the patterned photoresist layer exposes the insulating layer 140 to be formed with a conductive plug, and the insulating layer 140 and a portion of the second dielectric layer 103 are etched, or the insulating layer 140, a portion of the first dielectric layer 101 and a portion of the gate dielectric layer 210 are etched, so that the source/drain connection layer 190 and the gate structure 220 of different layers are exposed, and the source/drain connection layer 190 and the gate structure 220 serve as etching stop layers. After etching, a plurality of channels are formed, extending in the X direction to the source/drain connection layer 190, extending in the Y direction to the gate structure 220, and then depositing a metal material in the channels to form conductive plugs. In the present embodiment, the metal material is a conductive material such as tungsten, and the metal material is deposited by a method such as a plasma enhanced chemical vapor deposition method, a low pressure chemical vapor deposition method, or atomic layer deposition method. The conductive plugs include a first conductive plug 240 and a second conductive plug 241, where the first conductive plug 240 is connected to the source/drain connection layer 190, and the second conductive plug 241 is connected to the gate structure 220, so as to connect the MOS transistor to a subsequent circuit, which will not be described in detail herein.

Referring to fig. 46, in an embodiment of the present invention, a circuit diagram of a portion of a semiconductor device is provided, wherein an isolation trench 170 is disposed between a portion of upper and lower MOS transistors to further improve the crosstalk effect of adjacent MOS devices. The MOS transistors in multiple columns are stacked in a staggered manner, and the grid electrodes, the source electrodes and the drain electrodes of the MOS transistors are led out in different directions. The number of semiconductor devices in a unit area is increased, and the production capacity is increased.

In summary, the present invention provides a semiconductor device and a method for fabricating the same, in which a multi-layered stacked structure is formed on a substrate to form a multi-layered semiconductor device when the semiconductor device is fabricated. The vertical channel penetrates through the multi-layer laminated structure and is contacted with the substrate, and isolation grooves are formed between adjacent semiconductor devices on part of the vertical channel, so that the crosstalk influence of the adjacent semiconductor devices is improved. The source/drain connecting layer is formed by removing the first sacrifice, the second sacrifice layer is removed, and the grid structure is formed, so that the multi-layer semiconductor device structure is formed, the manufacturing method is simple, a plurality of semiconductor devices can be formed on the substrate at the same time, the production capacity of the semiconductor devices is increased, equipment is not required to be increased, the manufacturing requirements can be realized by the existing equipment, and the production cost of enterprises is reduced.

The embodiments of the invention disclosed above are intended only to help illustrate the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand and utilize the invention. The invention is limited only by the claims and the full scope and equivalents thereof.

Claims

1. A semiconductor device, comprising:

a substrate;

a plurality of vertical channels disposed on the substrate;

2. The semiconductor device of claim 1, wherein a depth of the isolation trench is one third to one half of a radial dimension of the vertical channel.

3. The semiconductor device of claim 1, wherein a doped region is disposed on the vertical channel, the doped region being connected to the source/drain connection layer.

4. The semiconductor device of claim 3, wherein the doped region has a depth of one third to two thirds of a depth of the isolation trench.

5. The semiconductor device of claim 1, wherein the vertical channel is one of a cylindrical silicon or a hollow cylindrical fully depleted structure.

6. The semiconductor device of claim 1, wherein a plurality of the vertical channels are arranged in a positive direction, a rectangular arrangement, or a triangular arrangement.

7. A method of fabricating a semiconductor device, comprising the steps of:

providing a substrate;

forming a plurality of vertical channels on the substrate;

8. The method of manufacturing a semiconductor device according to claim 7, characterized in that the method of manufacturing comprises the steps of:

forming a plurality of layers of the laminated structure on the substrate; and

9. The method of manufacturing a semiconductor device according to claim 8, wherein the forming of the source/drain connection layer comprises:

removing the first sacrificial layer in the laminated structure; and

10. The method of manufacturing a semiconductor device according to claim 9, wherein a radial dimension of the first deep opening is greater than a thickness of the first sacrificial layer.

11. The method of manufacturing a semiconductor device according to claim 8, wherein the forming of the gate structure comprises:

removing the second sacrificial layer in the laminated structure; and

12. The method of manufacturing a semiconductor device according to claim 11, wherein a radial dimension of the second deep opening is greater than a thickness of the second sacrificial layer.