CN116009020A - Laser radar system, three-dimensional imaging control method and device - Google Patents

Laser radar system, three-dimensional imaging control method and device Download PDF

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Publication number
CN116009020A
CN116009020A CN202310023559.5A CN202310023559A CN116009020A CN 116009020 A CN116009020 A CN 116009020A CN 202310023559 A CN202310023559 A CN 202310023559A CN 116009020 A CN116009020 A CN 116009020A
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China
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laser
lens
semiconductor
receiving
slow axis
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周思雨
王瑞
张弛
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Benewake Beijing Co Ltd
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Shenzhen North Wake Technology Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02ATECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
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    • Y02A90/10Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation

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Abstract

The application provides a laser radar system, a three-dimensional imaging control method and a three-dimensional imaging control device, and relates to the technical field of radar detection. According to the method, laser beams emitted by a plurality of emission channels of a semiconductor laser array along the semiconductor slow axis direction are subjected to beam collimation treatment in the semiconductor fast axis direction through the fast axis collimation lens, the treated laser beams are expanded and overlapped into the same laser big beam in the semiconductor slow axis direction through the beam expansion lens, then the laser big beam is subjected to beam collimation treatment in the semiconductor slow axis direction through the slow axis collimation lens, the treated laser big beam is subjected to dodging treatment through the micro lens array and is projected onto the surface of a target object through the laser scanning assembly to perform laser scanning, so that a laser receiving assembly receives and images the laser big beam reflected by the surface of the target object through the laser scanning assembly, and a corresponding three-dimensional scanning image is obtained, and therefore radar resolution is effectively improved on the basis of maintaining the whole volume unchanged.

Description

Laser radar system, three-dimensional imaging control method and device
Technical Field
The application relates to the technical field of radar detection, in particular to a laser radar system, a three-dimensional imaging control method and a device.
Background
With the continuous development of science and technology, radar detection technology gradually tends to be mature, and the application of radar detection technology in various industries is more and more extensive, wherein vehicle automatic driving is an important application direction of the radar detection technology nowadays. With the increasing popularization of the automatic driving technology of vehicles, the requirements of people on the laser radar are higher and higher, and the laser radar cannot meet the increasing radar resolution requirement under the same whole size.
Disclosure of Invention
In view of this, an object of the present application is to provide a laser radar system, a three-dimensional imaging control method and a device, which can effectively reduce the instantaneous field angle of the laser radar system in the slow axis direction and the fast axis direction of the semiconductor in the laser scanning process, so as to effectively improve the radar resolution on the basis of maintaining the whole volume unchanged.
In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
in a first aspect, the present application provides a lidar system comprising a semiconductor laser array, a fast axis collimating lens, a beam expanding lens, a slow axis collimating lens, a microlens array, a laser scanning assembly, and a laser receiving assembly;
The fast axis collimating lens is arranged on a laser emission light path of the semiconductor laser array and is used for carrying out beam collimation treatment on laser beams emitted by a plurality of emission channels of the semiconductor laser array in the fast axis direction of the semiconductor, wherein the stacking arrangement direction of the emission channels is parallel to the slow axis direction of the semiconductor;
the beam expanding lens is arranged on a collimation light path of the fast axis collimation lens and is used for expanding and overlapping all laser beams processed by the fast axis collimation lens into a same laser big beam in the slow axis direction of the semiconductor;
the slow axis collimating lens is arranged on a light transmission light path of the beam expanding lens and is used for carrying out light beam collimation treatment in the semiconductor slow axis direction on the laser big light beam obtained by the beam expanding lens treatment;
the micro lens array is arranged on a collimation light path of the slow axis collimation lens and is used for carrying out light homogenizing treatment on the laser big beam processed by the slow axis collimation lens;
the laser scanning assembly is arranged on an emergent light path of the micro lens array and is used for projecting a laser big beam processed by the micro lens array onto the surface of a target object for laser scanning;
The laser receiving assembly is used for receiving and imaging the laser big beam reflected by the surface of the target object through the laser scanning assembly to obtain a three-dimensional scanning image of the surface of the target object.
In an alternative embodiment, the laser scanning assembly comprises a horizontal scanning control device and a vertical scanning control device;
the vertical scanning control device is arranged on a light beam reflection light path of the horizontal scanning control device and is used for projecting the laser big light beams from the micro lens array reflected by the horizontal scanning control device to the surface of the target object for laser scanning or reflecting the laser big light beams from the surface of the target object to the laser receiving assembly through the horizontal scanning control device; the horizontal scanning control device is used for controlling the laser beam which is projected to the surface of the target object to carry out laser scanning in the horizontal direction, and the vertical scanning control device is used for controlling the laser beam which is projected to the surface of the target object to carry out laser scanning in the vertical direction.
In an alternative embodiment, the horizontal scanning control device comprises a prism, and the horizontal scanning control device adjusts the beam projection position of the laser big beam to be projected in the horizontal direction through the prism;
The vertical scanning control device comprises a vibrating mirror, and the vertical scanning control device adjusts the beam projection position of the laser big beam to be projected in the vertical direction through the vibrating mirror.
In an alternative embodiment, the laser receiving assembly comprises a receiving lens group and a receiving chip;
the receiving lens group is arranged on a light beam reflection light path of the laser scanning assembly and is used for converging a laser big light beam reflected by the laser scanning assembly;
the receiving chip is arranged on the light-emitting path of the receiving lens group and is used for receiving and imaging the laser big beam converged by the receiving lens group.
In an alternative embodiment, the receiving lens group includes a fast axis receiving cylindrical lens and a slow axis receiving cylindrical lens;
the cylindrical extension direction of the fast axis receiving cylindrical lens is parallel to the semiconductor fast axis direction and is used for adjusting the imaging width of the receiving chip;
the cylindrical extension direction of the slow axis receiving cylindrical lens is parallel to the slow axis direction of the semiconductor and is used for adjusting the imaging height of the receiving chip.
In an alternative embodiment, the effective caliber width of the fast axis collimating lens is greater than or equal to the chip width of the receiving chip, and the effective caliber height of the slow axis collimating lens is greater than or equal to the chip height of the receiving chip.
In an alternative embodiment, the fast axis collimating lens and the slow axis collimating lens are both made of cylindrical lenses;
the cylindrical surface extending direction of the fast axis collimating lens is parallel to the fast axis direction of the semiconductor, and the cylindrical surface extending direction of the slow axis collimating lens is parallel to the slow axis direction of the semiconductor.
In an alternative embodiment, the lens surface of the beam expanding lens, which is close to the fast axis collimating lens, is in a convex shape;
the lens surface of the beam expanding lens, which is close to the slow axis collimating lens, is in a convex shape or a concave shape.
In a second aspect, the present application provides a three-dimensional imaging control method applied to a radar control device communicatively connected to the lidar system according to any of the preceding embodiments, the method comprising:
controlling each emission channel of the semiconductor laser array to emit laser beams respectively;
controlling a laser scanning assembly to adjust the laser scanning position of a laser big beam which is processed by a fast axis collimating lens, a beam expanding lens, a slow axis collimating lens and a micro lens array and is projected onto the surface of a target object;
and controlling a laser receiving assembly to receive and image the laser big beam reflected by the surface of the target object through the laser scanning assembly, so as to obtain a three-dimensional scanning image of the surface of the target object.
In a third aspect, the present application provides a three-dimensional imaging control apparatus applied to a radar control device communicatively connected to the lidar system according to any of the preceding embodiments, the apparatus comprising:
the laser emission control module is used for controlling each emission channel of the semiconductor laser array to emit laser beams respectively;
the laser scanning control module is used for controlling the laser scanning assembly to adjust the laser scanning position of the laser big beam which is processed by the fast axis collimating lens, the beam expanding lens, the slow axis collimating lens and the micro lens array and is projected onto the surface of the target object;
and the laser imaging control module is used for controlling the laser receiving assembly to receive and image the laser big beam reflected by the surface of the target object through the laser scanning assembly so as to obtain a three-dimensional scanning image of the surface of the target object.
In this case, the beneficial effects of the embodiments of the present application may include the following:
according to the method, the laser beams emitted by the plurality of emission channels of the semiconductor laser array along the semiconductor slow axis direction are subjected to beam collimation treatment in the semiconductor fast axis direction through the fast axis collimating lens, the laser beams after the fast axis collimating lens are subjected to beam expansion and superposition in the semiconductor slow axis direction to form the same laser big beam through the beam expansion lens, then the laser big beam obtained through beam expansion lens treatment is subjected to beam collimation treatment in the semiconductor slow axis direction through the slow axis collimating lens, the laser big beam after the slow axis collimating lens treatment is subjected to dodging treatment through the micro lens array, and the laser big beam after the micro lens array treatment is projected onto the surface of a target object to be subjected to laser scanning through the laser scanning assembly, so that the laser receiving assembly can receive and image the laser big beam reflected by the surface of the target object through the laser scanning assembly, and a three-dimensional scanning image of the surface of the target object is obtained, and therefore the instantaneous volume of the laser radar system in the semiconductor slow axis direction and the semiconductor fast axis direction in the laser scanning process is effectively reduced by means of light treatment cooperation among the fast axis collimating lens, the beam expansion lens and the slow axis collimating lens is not required, and the effective resolution is not maintained on the basis of the improvement.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic deployment diagram of a lidar system according to an embodiment of the present application;
fig. 2 is a schematic diagram of the composition of a laser receiving component according to an embodiment of the present application;
fig. 3 is a schematic diagram of communication between a lidar system and a radar control device according to an embodiment of the present application;
fig. 4 is a schematic flow chart of a three-dimensional imaging control method according to an embodiment of the present application;
fig. 5 is a schematic diagram of the composition of the three-dimensional imaging control device according to the embodiment of the present application.
Icon: 10-a lidar system; an 11-semiconductor laser array; 12-fast axis collimating lens; 13-a beam expanding lens; 14-a slow axis collimating lens; 15-a microlens array; 16-a laser scanning assembly; 17-a laser receiving assembly; 171-a receiving lens group; 172-receiving chip; 20-a radar control device; 200-a three-dimensional imaging control device; 210-a laser emission control module; 220-a laser scanning control module; 230-a laser imaging control module.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on those shown in the drawings, or those conventionally put in place when the product of the application is used, or those conventionally understood by those skilled in the art, merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the application.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In the description of the present application, it should also be understood that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The embodiments described below and features of the embodiments may be combined with each other without conflict.
Referring to fig. 1, fig. 1 is a schematic deployment diagram of a lidar system 10 according to an embodiment of the present application. In this embodiment of the present application, the laser radar system 10 may include a semiconductor laser array 11, a fast axis collimating lens 12, a beam expanding lens 13, a slow axis collimating lens 14, a micro lens array 15, a laser scanning assembly 16 and a laser receiving assembly 17, so as to effectively reduce an instantaneous field angle of the laser radar system 10 in a semiconductor slow axis direction and a semiconductor fast axis direction in a laser scanning process through light processing cooperation between the semiconductor laser array 11, the fast axis collimating lens 12, the beam expanding lens 13 and the slow axis collimating lens 14, thereby effectively improving radar resolution on the basis of maintaining a whole volume unchanged. Wherein the semiconductor slow axis direction is a specific direction parallel to the semiconductor junction plane of the corresponding semiconductor laser array 11, and the semiconductor fast axis direction is a specific direction perpendicular to the semiconductor junction plane of the corresponding semiconductor laser array 11.
In the embodiment of the present application, the semiconductor laser array 11 has a non-rotationally symmetrical waveguide structure, and the divergence angles of the original laser beams directly emitted by the semiconductor laser array 11 in the fast axis direction and the slow axis direction of the semiconductor are both large, which generally cannot meet the increasing radar resolution requirements. The semiconductor laser array 11 may include a plurality of semiconductor chips, each semiconductor chip corresponds to one emission channel of the semiconductor laser array 11, the laser beams emitted by the semiconductor laser array 11 through the emission channels are in an asymmetric state in the semiconductor slow axis direction and the semiconductor fast axis direction, and a stacking arrangement direction between the plurality of emission channels of the semiconductor laser array 11 is parallel to the semiconductor slow axis direction. In addition, the semiconductor laser array 11 employed in the present application has a smaller initial emission angle of the original laser beam emitted from the semiconductor laser array 11 whose channel stack arrangement direction is parallel to the semiconductor slow axis direction than the semiconductor laser array whose channel stack arrangement direction is parallel to the semiconductor fast axis direction.
In this embodiment of the present application, since the divergence angles of the laser beams emitted by the semiconductor laser array 11 through the single emission channel are different in the semiconductor slow axis direction and the semiconductor fast axis direction, the fast axis collimating lens 12 may be disposed on the laser emission optical path of the semiconductor laser array 11, and configured to perform beam collimation processing on the laser beams emitted by the plurality of emission channels of the semiconductor laser array 11 in the semiconductor fast axis direction, so as to converge the laser beams emitted by the plurality of emission channels in the semiconductor fast axis direction, thereby reducing the divergence angle of the laser beams emitted by the plurality of emission channels in the semiconductor fast axis direction, and implementing a collimation effect on the original laser beams emitted by the semiconductor laser array 11 in the semiconductor fast axis direction.
In this embodiment of the present application, the beam expander lens 13 is disposed on the collimating optical path of the fast axis collimating lens 12, and is configured to expand and overlap each laser beam processed by the fast axis collimating lens 12 into a large laser beam in the slow axis direction of the semiconductor, so that a plurality of laser beams processed by the fast axis collimating lens 12 are polymerized to form an emission light spot with a larger area, so that the emission light spot formed by the polymerization can be divided into more linear small collimating light spots, thereby ensuring that the radar resolution of the laser radar system 10 can be effectively improved when the linear small collimating light spots are applied to the laser scanning process.
In this embodiment of the present application, the slow axis collimating lens 14 is disposed on a light-transmitting optical path of the beam expanding lens 13, and is configured to perform beam collimation processing in a semiconductor slow axis direction on a large laser beam obtained by processing the beam expanding lens 13, so as to converge the large laser beam obtained by processing the beam expanding lens 13 in the semiconductor slow axis direction, thereby reducing a divergence angle of the large laser beam obtained by processing the beam expanding lens 13 in the semiconductor slow axis direction, and implementing a collimation effect on an original laser beam emitted by the semiconductor laser array 11 in the semiconductor slow axis direction.
In this case, the laser radar system 10 provided in the present application may effectively reduce the instantaneous field angle of the semiconductor slow axis direction and the semiconductor fast axis direction when the laser radar system 10 emits laser in the laser scanning process through the light processing coordination among the fast axis collimating lens 12, the beam expanding lens 13 and the slow axis collimating lens 14.
In this embodiment of the present application, the microlens array 15 is disposed on the collimating optical path of the slow axis collimating lens 14, and is configured to perform dodging processing on the laser big beam processed by the slow axis collimating lens 14. Under the condition that the total size and the laser beam interval of the laser beams emitted by the semiconductor laser array 11 are enlarged through the beam expanding lens 13, the intervals among a plurality of micro lens units included by the micro lens array 15 can be effectively enlarged, the processing and manufacturing difficulty of the micro lens array 15 is reduced, meanwhile, the light homogenizing effect of the micro lens array 15 is effectively improved, diffraction interference phenomenon of large laser beams after light homogenizing is avoided, and the light collimating effect is improved.
In this embodiment of the present application, the laser scanning assembly 16 is disposed on an outgoing optical path of the microlens array 15, and is configured to project a laser beam processed by the microlens array 15 onto a surface of a target object for laser scanning. The laser scanning assembly 16 may adjust the scanning position of the laser big beam processed by the micro lens array 15 in the horizontal direction and/or the vertical direction to reach the desired scanning angle in the horizontal direction and the vertical direction, so as to effectively ensure that the laser radar system 10 can maintain the desired scanning angle.
In this embodiment of the present application, the laser receiving component 17 is disposed on a beam reflection optical path of the laser scanning component 16, where the laser scanning component 16 may receive a laser big beam reflected by the surface of the target object, and reflect the received laser big beam to the laser receiving component 17 for receiving and imaging, so as to obtain a three-dimensional scanned image of the surface of the target object. The laser receiving component 17 may calculate a time difference between a start time point and an end time point of the laser scanning component 16 for receiving the reflected laser big beam by counting the start time point and the beam scanning direction angle of the laser scanning component 16, to obtain a flight duration of the same laser big beam, and then calculate a scanning distance of the laser big beam at a corresponding beam scanning direction angle (i.e. a distance between the laser scanning component 16 and the target object surface in a scanning direction corresponding to the beam scanning direction angle) according to a standard light speed and the calculated flight duration, where the laser receiving component 17 may perform three-dimensional imaging based on the scanning distances corresponding to the different beam scanning direction angles, to obtain a three-dimensional scanning image of the target object surface.
In this process, it is noted that the laser receiving assembly 17 may include a plurality of receiving channels, and receive the light beam through each receiving channel. When the beam expanding lens 13 expands and overlaps the laser beams corresponding to the plurality of emission channels into the same laser big beam in the slow axis direction of the semiconductor, the phenomenon that the laser beams corresponding to the different emission channels are misplaced and overlapped when being received by the laser receiving assembly 17 can be effectively avoided, and therefore the phenomenon of laser crosstalk between a single receiving channel and other receiving channels of the laser receiving assembly 17 is effectively improved.
Therefore, the method can effectively reduce the instantaneous field angle of the laser radar system 10 in the semiconductor slow axis direction and the semiconductor fast axis direction in the laser scanning process by utilizing the light processing cooperation between the fast axis collimating lens 12, the beam expanding lens 13 and the slow axis collimating lens 14 based on the characteristic that the radar resolution and the emission field angle in the radar laser scanning process are inversely related, so that the radar resolution is effectively improved on the basis of maintaining the whole volume unchanged.
Alternatively, in the embodiment of the present application, the laser scanning assembly 16 may include a horizontal scanning control device and a vertical scanning control device. The horizontal scanning control device is used for controlling the laser beam which is projected to the surface of the target object to carry out laser scanning in the horizontal direction, and the vertical scanning control device is used for controlling the laser beam which is projected to the surface of the target object to carry out laser scanning in the vertical direction. The vertical scanning control device is arranged on a beam reflection light path of the horizontal scanning control device, so that when the horizontal scanning control device receives the laser big beam from the micro lens array 15, the horizontal scanning control device reflects the received laser big beam to the vertical scanning control device, and the vertical scanning control device projects the laser big beam reflected by the horizontal scanning control device onto the surface of the target object to perform laser scanning. Further, when the vertical scanning control device receives the laser large beam reflected by the target object surface, the vertical scanning control device reflects the received laser large beam to the horizontal scanning control device, which reflects the received laser large beam to the laser receiving assembly 17.
In this embodiment of the present application, the horizontal scanning control device includes a prism, and adjusts, by using the prism, a beam projection position of a large laser beam to be projected in a horizontal direction; the vertical scanning control device comprises a vibrating mirror, and the beam projection position of the laser large beam to be projected in the vertical direction is adjusted through the vibrating mirror.
Optionally, referring to fig. 2, fig. 2 is a schematic diagram illustrating a composition of the laser receiving assembly 17 according to an embodiment of the present application. In the embodiment of the present application, the laser receiving assembly 17 may include a receiving lens group 171 and a receiving chip 172. The receiving lens group 171 is disposed on a beam reflection optical path of the laser scanning assembly 16, and is configured to perform beam focusing on the laser beam reflected by the laser scanning assembly 16; the receiving chip 172 is disposed on the light-emitting path of the receiving lens group 171, and is configured to receive and image the laser big beam converged by the receiving lens group 171. The plurality of receiving channels are disposed at the receiving chip 172, and the receiving chip 172 may include any one photodiode or a plurality of photodiodes among Avalanche Photodiodes (APDs), silicon photomultipliers (sipms), single photon avalanche diodes (spans), and implement a light receiving function through the included photodiodes.
In this process, the receiving lens group 171 may be directly implemented by a standard receiving lens, and the overall receiving end field angle (FOV) of the laser receiving assembly 17 is consistent with the overall emitting end field angle of the laser beam emitted by the laser scanning assembly 16, where the imaging height (b) of the receiving chip 172, the focal length (f) of the standard receiving lens, and the overall receiving end field angle (FOV) have an association relationship of "b/2=f×tan (FOV/2)", so that the radar resolution of the focal length lidar system 10 may be further improved by adjusting the focal length of the standard receiving lens based on the lidar system 10.
The receiving lens group 171 may also be obtained by combining a fast axis receiving cylindrical lens and a slow axis receiving cylindrical lens. The cylindrical extension direction of the fast axis receiving cylindrical lens is parallel to the fast axis direction of the semiconductor, and is used for adjusting the imaging width of the receiving chip 172; the cylindrical extension direction of the slow axis receiving cylindrical lens is parallel to the semiconductor slow axis direction, and is used for adjusting the imaging height of the receiving chip 172. The laser receiving component 17 has a receiving end view angle (FOV) in the semiconductor slow axis direction and an emitting end view angle (FOV) in the semiconductor slow axis direction when the laser scanning component 16 emits a laser beam Slow shaft ) In keeping with the receiving end view angle of the laser receiving assembly 17 in the semiconductor fast axis direction and the emitting end view angle (FOV) of the laser scanning assembly 16 in the semiconductor fast axis direction when emitting the laser beam Fast shaft ) The plurality of receiving channels of the receiving chip 172 may include at least one receiving channel for a fast axis direction of the semiconductor (hereinafter, simply referred to as a "fast axis receiving channel") and at least one receiving channel for a slow axis direction of the semiconductor (hereinafter, simply referred to as a "slow axis receiving channel").
In this case, the imaging width (b) of the receiving chip 172 in the semiconductor fast axis direction Fast shaft ) Fast axis receiving cylindrical lens focal length (f Fast shaft ) Emission end field angle (FOV) of semiconductor fast axis direction Fast shaft ) There is an association relationship "b Fast shaft /2=f Fast shaft *tan(FOV Fast shaft 2", the resolution angle (θ) of the lidar system 10 in the direction of the fast axis of the semiconductor, the fast axis receiving cylindrical lens focal length (f Fast shaft ) The fast axis receiving channel has an association relation of' theta=f Fast shaft Total number of fast axis reception channels "or" tan (θ) =single fast axis reception channel size/f Fast shaft "wherein the radar resolution of the receiving chip 172 in the semiconductor fast axis direction is inversely related to the resolution angle of the receiving chip 172 in the semiconductor fast axis direction.
The imaging height (b) of the receiving chip 172 in the slow axis direction of the semiconductor Slow shaft ) Focal length of slow axis receiving cylindrical lens (f Slow shaft ) And the emission end field angle (FOV) of the semiconductor in the slow axis direction Slow shaft ) There is an association relationship "b Slow shaft /2=f Slow shaft *tan(FOV Slow shaft 2", the resolution angle (delta) of the lidar system 10 in the direction of the slow axis of the semiconductor, the slow axis receiving cylindrical lens focal length (f Slow shaft ) The slow axis receiving channel has association relation' delta=f Slow shaft Total number of slow-axis receive channels "or" tan (δ) =single slow-axis receive channel size/f Slow shaft "wherein the radar resolution of the receiving chip 172 in the slow axis direction of the semiconductor is inversely related to the resolution angle of the receiving chip 172 in the slow axis direction of the semiconductor.
Therefore, when the total number of the slow-axis receiving channels and the total number of the fast-axis receiving channels are fixed, the instantaneous field angles respectively corresponding to the semiconductor fast-axis direction and the semiconductor slow-axis direction are reduced, so that the receiving end field angles respectively corresponding to the laser receiving component 17 in the semiconductor fast-axis direction and the semiconductor slow-axis direction are reduced, the resolution included angles respectively corresponding to the laser receiving component 17 in the semiconductor fast-axis direction and the semiconductor slow-axis direction are effectively reduced, and the radar resolution respectively corresponding to the laser receiving component 17 in the semiconductor fast-axis direction and the semiconductor slow-axis direction is effectively improved; meanwhile, when the size of a single slow axis receiving channel and the size of a single fast axis receiving channel are fixed, the resolution included angles of the laser receiving component 17, which are respectively corresponding to the semiconductor fast axis direction and the semiconductor slow axis direction, are effectively reduced by increasing the focal length of the slow axis receiving cylindrical lens and the focal length of the fast axis receiving cylindrical lens, so that the radar resolution of the laser receiving component 17, which is respectively corresponding to the semiconductor fast axis direction and the semiconductor slow axis direction, is effectively improved.
In this embodiment, in order to ensure that the large laser beam projected after being processed by the fast axis collimating lens 12 and the slow axis collimating lens 14 can completely cover the receiving chip 172 when being received by the laser receiving component 17, the effective caliber width of the fast axis collimating lens 12 needs to be greater than or equal to the chip width of the receiving chip 172, and the effective caliber height of the slow axis collimating lens 14 needs to be greater than or equal to the chip height of the receiving chip 172, so as to ensure that the receiving chip 172 can achieve a complete light information receiving effect.
In the embodiment of the present application, the fast axis collimating lens 12 and the slow axis collimating lens 14 are both made of cylindrical lenses. The cylindrical surface extending direction of the fast axis collimating lens 12 is parallel to the semiconductor fast axis direction, so that the beam collimating effect of the laser beam in the semiconductor fast axis direction is effectively realized through the cylindrical surface curvature of the fast axis collimating lens 12; the cylindrical extension direction of the slow axis collimating lens 14 is parallel to the slow axis direction of the semiconductor, so that the beam collimating effect of the laser beam in the slow axis direction of the semiconductor is effectively achieved through the cylindrical curvature of the slow axis collimating lens 14.
In the embodiment of the present application, the lens surface of the beam expanding lens 13, which is close to the fast axis collimating lens 12, is in a convex shape, so as to perform beam converging processing on the received laser beam in the slow axis direction of the semiconductor through the lens surface, which is close to the fast axis collimating lens 12; the lens surface of the beam expander lens 13 near the slow axis collimator lens 14 may be a convex shape or a concave shape to expand the converged laser beam through the lens surface near the slow axis collimator lens 14. Wherein if the beam expanding lens 13 having a concave lens surface near the slow axis collimating lens 14 and the beam expanding lens 13 having a convex lens surface near the slow axis collimating lens 14 have the same laser beam expanding effect, the overall height of the former beam expanding lens 13 tends to be larger than that of the latter beam expanding lens 13. Therefore, in order to effectively reduce the overall height of the beam expander lens 13 in the lidar system 10, the lens surface of the beam expander lens 13 near the slow axis collimator lens 14 may be directly provided in a convex shape.
In one implementation of this embodiment, the beam expander lens 13 may be implemented with a thick lenticular lens, so as to ensure that the beam expander lens 13 implements the beam expander function by using the negative lens characteristic that can be exhibited by the laser radar system 10, and at the same time, the overall component height of the laser emitting component (including the semiconductor laser array 11, the fast axis collimator lens 12, the beam expander lens 13, the slow axis collimator lens 14 and the micro lens array 15) of the laser radar system 10 may be effectively reduced, so as to further reduce the overall height of the laser radar system 10. The thickness of the beam expander lens 13 may be 7.922cm, the radius of curvature of the beam expander lens 13 on the lens surface close to the fast axis collimating lens 12 is 1.104cm, the radius of curvature of the beam expander lens 13 on the lens surface close to the slow axis collimating lens 14 is-4.366 cm, and the focal length of the beam expander lens 13 is a negative number.
Optionally, referring to fig. 3, fig. 3 is a schematic diagram of communication between the lidar system 10 and the radar control device 20 according to an embodiment of the present application. In this embodiment of the present application, the lidar system 10 is connected to the radar control device 20 in a communication manner, and the radar control device 20 controls the lidar system 10 to perform radar detection scanning on the surface of the target object, so as to obtain a three-dimensional scanning image of the surface of the target object. The radar control device 20 may be, but is not limited to, a smart phone, a tablet computer, a car computer, etc.
In the present application, in order to ensure that the radar control device 20 can control the lidar system 10 to achieve a high-resolution three-dimensional scanning imaging effect for the target object surface, the embodiments of the present application achieve the foregoing objects by providing a three-dimensional imaging control method applied to the radar control device 20 described above. The three-dimensional imaging control method provided in the present application is described in detail below.
Referring to fig. 4, fig. 4 is a flow chart of a three-dimensional imaging control method according to an embodiment of the present application. In the embodiment of the present application, the three-dimensional imaging control method may include steps S310 to S330.
In step S310, each emission channel of the semiconductor laser array is controlled to emit a laser beam, respectively.
In step S320, the laser scanning assembly is controlled to adjust the laser scanning position of the laser beam obtained by the fast axis collimating lens, the beam expanding lens, the slow axis collimating lens and the micro lens array on the surface of the target object.
In this embodiment, the radar control device 20 may continuously adjust the laser scanning position of the large laser beam emitted by the laser scanning assembly 16 on the target object surface by controlling the horizontal scanning control device and the vertical scanning control device included in the laser scanning assembly 16, so that the laser scanning assembly 16 can perform the overall scanning on the target object surface.
Step S330, the laser receiving component is controlled to receive and image the laser big beam reflected by the surface of the target object through the laser scanning component, and a three-dimensional scanning image of the surface of the target object is obtained.
Thus, the present application can effectively utilize the lidar system 10 with high radar resolution to achieve a high-resolution three-dimensional scanning imaging effect on the target object surface by executing the above steps S310 to S330.
In this application, in order to ensure that the radar control device 20 is capable of executing the above-described three-dimensional imaging control method by controlling the three-dimensional imaging control apparatus, the present application realizes the foregoing functions by dividing the functional blocks of the three-dimensional imaging control apparatus. The specific composition of the three-dimensional imaging control device provided in the present application will be described correspondingly.
Referring to fig. 5, fig. 5 is a schematic diagram illustrating a composition of a three-dimensional imaging control device 200 according to an embodiment of the present disclosure. In the embodiment of the present application, the three-dimensional imaging control device 200 may include a laser emission control module 210, a laser scanning control module 220, and a laser imaging control module 230.
The laser emission control module 210 is configured to control each emission channel of the semiconductor laser array to emit a laser beam respectively.
The laser scanning control module 220 is configured to control the laser scanning assembly to adjust a laser scanning position of the laser beam processed by the fast axis collimating lens, the beam expanding lens, the slow axis collimating lens and the micro lens array on the surface of the target object.
The laser imaging control module 230 is configured to control the laser receiving assembly to receive and image the laser beam reflected by the surface of the target object through the laser scanning assembly, so as to obtain a three-dimensional scanned image of the surface of the target object.
It should be noted that, the basic principle and the technical effects of the three-dimensional imaging control device 200 provided in the embodiment of the present application are the same as the three-dimensional imaging control method described above. For a brief description, reference is made to the description of the three-dimensional imaging control method described above where the present embodiment section is not mentioned.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners as well. The apparatus embodiments described above are merely illustrative, for example, of the flowcharts and block diagrams in the figures that illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, the functional modules in the embodiments of the present application may be integrated together to form a single part, or each module may exist alone, or two or more modules may be integrated to form a single part. The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a readable storage medium. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution, in the form of a software product stored in a readable storage medium, including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned readable storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
In summary, in the laser radar system, the three-dimensional imaging control method and the device provided in the embodiments of the present application, the laser beams emitted by the plurality of emission channels of the semiconductor laser array and arranged in a stacking manner along the slow axis direction of the semiconductor are subjected to beam collimation processing in the fast axis direction of the semiconductor through the fast axis collimating lens, and the laser beams processed by the fast axis collimating lens are expanded and overlapped into the same laser beam in the slow axis direction of the semiconductor through the beam expanding lens, then the laser beam processed by the slow axis collimating lens is subjected to beam collimation processing in the slow axis direction of the semiconductor, the laser beam processed by the slow axis collimating lens is subjected to dodging processing by the micro lens array, and the laser beam processed by the micro lens array is projected onto the surface of the target for laser scanning, so that the laser receiving assembly can receive and image the laser beam reflected by the surface of the target object through the laser scanning assembly, thereby obtaining a three-dimensional scanning image of the surface of the target object.
The foregoing is merely various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (10)

1. The laser radar system is characterized by comprising a semiconductor laser array, a fast axis collimating lens, a beam expanding lens, a slow axis collimating lens, a micro lens array, a laser scanning assembly and a laser receiving assembly;
the fast axis collimating lens is arranged on a laser emission light path of the semiconductor laser array and is used for carrying out beam collimation treatment on laser beams emitted by a plurality of emission channels of the semiconductor laser array in the fast axis direction of the semiconductor, wherein the stacking arrangement direction of the emission channels is parallel to the slow axis direction of the semiconductor;
the beam expanding lens is arranged on a collimation light path of the fast axis collimation lens and is used for expanding and overlapping all laser beams processed by the fast axis collimation lens into a same laser big beam in the slow axis direction of the semiconductor;
The slow axis collimating lens is arranged on a light transmission light path of the beam expanding lens and is used for carrying out light beam collimation treatment in the semiconductor slow axis direction on the laser big light beam obtained by the beam expanding lens treatment;
the micro lens array is arranged on a collimation light path of the slow axis collimation lens and is used for carrying out light homogenizing treatment on the laser big beam processed by the slow axis collimation lens;
the laser scanning assembly is arranged on an emergent light path of the micro lens array and is used for projecting a laser big beam processed by the micro lens array onto the surface of a target object for laser scanning;
the laser receiving assembly is used for receiving and imaging the laser big beam reflected by the surface of the target object through the laser scanning assembly to obtain a three-dimensional scanning image of the surface of the target object.
2. The system of claim 1, wherein the laser scanning assembly comprises a horizontal scanning control device and a vertical scanning control device;
the vertical scanning control device is arranged on a light beam reflection light path of the horizontal scanning control device and is used for projecting the laser big light beams from the micro lens array reflected by the horizontal scanning control device to the surface of the target object for laser scanning or reflecting the laser big light beams from the surface of the target object to the laser receiving assembly through the horizontal scanning control device; the horizontal scanning control device is used for controlling the laser beam which is projected to the surface of the target object to carry out laser scanning in the horizontal direction, and the vertical scanning control device is used for controlling the laser beam which is projected to the surface of the target object to carry out laser scanning in the vertical direction.
3. The system according to claim 2, wherein the horizontal scanning control device includes a prism, and the horizontal scanning control device adjusts a beam projection position of the laser large beam to be projected in a horizontal direction by the prism;
the vertical scanning control device comprises a vibrating mirror, and the vertical scanning control device adjusts the beam projection position of the laser big beam to be projected in the vertical direction through the vibrating mirror.
4. The system of any of claims 1-3, wherein the laser receiving assembly comprises a receiving lens set and a receiving chip;
the receiving lens group is arranged on a light beam reflection light path of the laser scanning assembly and is used for converging a laser big light beam reflected by the laser scanning assembly;
the receiving chip is arranged on the light-emitting path of the receiving lens group and is used for receiving and imaging the laser big beam converged by the receiving lens group.
5. The system of claim 4, wherein the receiving lens group comprises a fast axis receiving cylindrical lens and a slow axis receiving cylindrical lens;
the cylindrical extension direction of the fast axis receiving cylindrical lens is parallel to the semiconductor fast axis direction and is used for adjusting the imaging width of the receiving chip;
The cylindrical extension direction of the slow axis receiving cylindrical lens is parallel to the slow axis direction of the semiconductor and is used for adjusting the imaging height of the receiving chip.
6. The system of claim 4, wherein the effective aperture width of the fast axis collimating lens is greater than or equal to the chip width of the receiving chip and the effective aperture height of the slow axis collimating lens is greater than or equal to the chip height of the receiving chip.
7. The system of claim 1, wherein the fast axis collimating lens and the slow axis collimating lens are each made of cylindrical lenses;
the cylindrical surface extending direction of the fast axis collimating lens is parallel to the fast axis direction of the semiconductor, and the cylindrical surface extending direction of the slow axis collimating lens is parallel to the slow axis direction of the semiconductor.
8. The system of claim 1, wherein a lens surface of the beam expanding lens proximate the fast axis collimating lens is convex in shape;
the lens surface of the beam expanding lens, which is close to the slow axis collimating lens, is in a convex shape or a concave shape.
9. A three-dimensional imaging control method applied to a radar control device in communication with the lidar system of any of claims 1 to 8, the method comprising:
Controlling each emission channel of the semiconductor laser array to emit laser beams respectively;
controlling a laser scanning assembly to adjust the laser scanning position of a laser big beam which is processed by a fast axis collimating lens, a beam expanding lens, a slow axis collimating lens and a micro lens array and is projected onto the surface of a target object;
and controlling a laser receiving assembly to receive and image the laser big beam reflected by the surface of the target object through the laser scanning assembly, so as to obtain a three-dimensional scanning image of the surface of the target object.
10. A three-dimensional imaging control apparatus for use in a radar control device in communication with a lidar system of any of claims 1-8, the apparatus comprising:
the laser emission control module is used for controlling each emission channel of the semiconductor laser array to emit laser beams respectively;
the laser scanning control module is used for controlling the laser scanning assembly to adjust the laser scanning position of the laser big beam which is processed by the fast axis collimating lens, the beam expanding lens, the slow axis collimating lens and the micro lens array and is projected onto the surface of the target object;
and the laser imaging control module is used for controlling the laser receiving assembly to receive and image the laser big beam reflected by the surface of the target object through the laser scanning assembly so as to obtain a three-dimensional scanning image of the surface of the target object.
CN202310023559.5A 2023-01-09 2023-01-09 Laser radar system, three-dimensional imaging control method and device Pending CN116009020A (en)

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* Cited by examiner, † Cited by third party
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