CN115996039B - Multiplexer - Google Patents
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- CN115996039B CN115996039B CN202310289669.6A CN202310289669A CN115996039B CN 115996039 B CN115996039 B CN 115996039B CN 202310289669 A CN202310289669 A CN 202310289669A CN 115996039 B CN115996039 B CN 115996039B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention provides a multiplexer. The multiplexer includes: a substrate having a first surface; the multi-frequency series resonator is arranged on the first surface and is provided with a first laminated structure, the first laminated structure comprises at least two first working areas, each first working area comprises a first lower electrode, a first piezoelectric layer and a first upper electrode which are sequentially laminated along a first direction, the first direction is a direction far away from the substrate, and the working frequencies of the adjacent first working areas are different; the multi-frequency parallel resonator is arranged on the first surface and is adjacent to the multi-frequency series resonator, the multi-frequency parallel resonator is provided with a second laminated structure, the second laminated structure comprises at least two second working areas, each second working area comprises a second lower electrode, a second piezoelectric layer, a second upper electrode and a mass load layer, the second lower electrode, the second piezoelectric layer, the second upper electrode and the mass load layer are sequentially laminated along the first direction, and the working frequencies of the adjacent second working areas are different.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a multiplexer.
Background
With market globalization, a communication device needs a plurality of frequency bands for information exchange. In order to meet the requirements of users for peak rates and high system capacity, the LTE-Advanced protocol introduces carrier aggregation to increase signal bandwidth, thereby increasing the transmission bit rate. With the introduction of carrier aggregation technology, the maximum bandwidth supported by carrier aggregation is continuously refreshed, which catalyzes the development of high-integration multiplexer, and the development trend of radio frequency filter will be continued in the stage of 5G non-independent network and 5G independent network.
Among them, the diplexer, the triplexer and the quadruplex all belong to a class of devices, which are called "multiplexers". The multiplexer is a set of non-overlapping filters that in combination ensure that they are not loaded onto each other and that the outputs are highly isolated from each other. Taking a duplexer and a quadruplex as an example, the duplexer is a microwave device for dividing a signal spectrum into two frequency ranges, and is a main accessory of a different-frequency duplex radio station and a relay station. The device is used for separating uplink and downlink signals and restraining signals in unnecessary frequency bands, wherein an uplink signal end is connected with the signal transmitting module, and a downlink signal end is connected with the signal receiving module. Isolating the transmitting and receiving signals and ensuring that the receiving and transmitting can work normally at the same time. The device consists of two groups of band-pass filters with different frequencies, and avoids the transmission of local transmitting signals to a receiver. With the development of technology, a duplexer is required to be compact and lightweight. The quad-filter combines four filters with the same passband loading and isolation targets as the diplexer. The quadplexer allows two frequency bands to be connected to the antenna simultaneously, which is very useful for carrier aggregation applications and the like. In carrier aggregation, a handset may need to receive two frequency bands simultaneously. The quad-filter is more complex than the diplexer and triplexer because the four filters must be designed together.
From the viewpoint of multiplexers currently applied to the market, the space available for the duplex devices applied in the fields of vehicle-mounted wireless phones, automobiles and the like is limited, and the wiring and heat dissipation problems of the wireless phones are also considered, so that the miniaturization of the duplex devices is very necessary on the premise of meeting other indexes, and the current quadruplex products are widely applied to medium-high-end brands and flagship machines of handheld communication equipment such as mobile phones and the like, so that the terminal clients of the miniaturization bring more excellent receiving sensitivity of a receiving port (RX), the transmitting port (TX) is promoted to further reduce the current of the PA to improve the battery efficiency of the battery, and the battery level of higher power capacity is supported, and better use experience is brought to users. With the development of society, the performance of the multiplexer must reach the standard, and the multiplexer is miniaturized and light, so that the multiplexer can be applied to various environments.
However, as for the duplexer, as shown in fig. 1, the duplexer includes a series resonator and a parallel resonator each including a first lower electrode 20 ', a first piezoelectric layer 30 ', a first upper electrode 40 ', a second piezoelectric layer 50 ', and a second electrode layer 60 ' stacked on a substrate 10 ', and the parallel resonator further includes a mass loading layer 90 '. In the prior art, the thicknesses of the first piezoelectric layer 30 ' and the second piezoelectric layer 50 ' of the series resonator or the parallel resonator are different to realize the filtering function of the duplexer, and the secondarily deposited piezoelectric layers not only cause the loss of the target material, the waste of materials and the increase of the process cost, but also cause the thickness of the piezoelectric layer in the device to occupy most of the thickness of the resonator because the thickness of the second piezoelectric layer 50 ' in the duplexer is overlapped with the thickness of the first piezoelectric layer 30 ' in the direction perpendicular to the substrate 10 ', so that the size of the single resonator in the vertical direction is increased under the scheme, thereby causing the waste of space and directly leading to the size increase of products.
Disclosure of Invention
The main objective of the present invention is to provide a multiplexer to solve the problem of larger resonator size in the prior art.
In order to achieve the above object, there is provided a multiplexer comprising: a substrate having a first surface; the multi-frequency series resonator is arranged on the first surface and is provided with a first laminated structure, the first laminated structure comprises at least two first working areas, each first working area comprises a first lower electrode, a first piezoelectric layer and a first upper electrode which are sequentially laminated along a first direction, the first direction is a direction far away from the substrate, and the working frequencies of the adjacent first working areas are different; the multi-frequency parallel resonator is arranged on the first surface and is adjacent to the multi-frequency series resonator, the multi-frequency parallel resonator is provided with a second laminated structure, the second laminated structure comprises at least two second working areas, each second working area comprises a second lower electrode, a second piezoelectric layer, a second upper electrode and a mass load layer, the second lower electrode, the second piezoelectric layer, the second upper electrode and the mass load layer are sequentially laminated along the first direction, and the working frequencies of the adjacent second working areas are different.
Further, the plurality of first working areas are staggered.
Further, the plurality of second working areas are staggered.
Further, in a direction perpendicular to the first direction, the cross-sectional shape of the first lower electrode and the cross-sectional shape of the second lower electrode are closed patterns formed by straight lines and/or curved lines.
Further, the at least two first working areas comprise a first sub-working area and at least one second sub-working area, and each second sub-working area is arranged around the periphery of the first sub-working area.
Further, the at least two second working areas include a third sub-working area and at least one fourth sub-working area, each of the fourth sub-working areas being circumferentially disposed about the periphery of the third sub-working area.
Further, an electrode material of the first sub-lower electrode in the first sub-operation region is different from an electrode material of the second sub-lower electrode in the at least one second sub-operation region.
Further, the projection area of the first sub-working area on the substrate is a first area, the projection area of the at least one second sub-working area on the substrate is a second area, and the first area is unequal to the second area.
Further, an electrode material of the third sub-lower electrode in the third sub-operation region and an electrode material of the fourth sub-lower electrode in the at least one fourth sub-operation region are different.
Further, the projection area of the third sub-working area on the substrate is a third area, the projection area of the at least one fourth sub-working area on the substrate is a fourth area, and the third area is unequal to the fourth area.
By applying the technical scheme of the invention, the multi-frequency series resonator and the multi-frequency parallel resonator in the multiplexer are adjacently arranged on the first surface of the substrate, wherein the multi-frequency series resonator is provided with a first laminated structure, the multi-frequency parallel resonator is provided with a second laminated structure, and the first laminated structure comprises at least two first working areas, and the second laminated structure also comprises at least two second working areas, so that the at least two first working areas and the at least two second working areas can serve as working areas of the multiplexer under the condition that the multiplexer is in a working state, and further, the working frequencies between the two adjacent first working areas are different, and the working frequencies between the two adjacent second working areas are different, so that the purpose of dividing a signal spectrum into a plurality of frequency ranges can be realized under the condition that the multi-frequency series resonator and the multi-frequency parallel resonator of the multiplexer are both positioned on the first surface of the substrate. Compared with the mode of forming the dual-frequency parallel resonator by secondarily depositing the piezoelectric layer on the dual-frequency series resonator in the prior art, the series resonator and the parallel resonator in the duplexer in the prior art are arranged in a laminated mode, so that the thickness of the duplexer in the direction far away from the substrate is thicker, the size of a single resonator in the duplexer in the direction perpendicular to the substrate can be increased, further the space of the duplexer is wasted, the size of the duplexer is directly increased, the multi-frequency series resonator and the multi-frequency parallel resonator in the invention are not arranged in a laminated mode, but are directly arranged on the first surface of the substrate in an adjacent mode, and further the thickness of the multiplexer in the direction perpendicular to the substrate is far smaller than the thickness of the multiplexer in the direction perpendicular to the substrate in the prior art.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention. In the drawings:
fig. 1 is a schematic diagram showing a cross-sectional structure of a duplexer in the related art;
fig. 2 is a schematic diagram showing a cross-sectional structure including a duplexer according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view showing a first upper electrode, a first piezoelectric layer, and a first lower electrode in a dual-frequency series resonator;
fig. 4 is a schematic cross-sectional structure of a mass loading layer, a second upper electrode, a second piezoelectric layer, and a second lower electrode in a dual-frequency parallel resonator;
fig. 5 shows a schematic view of projection of a lower electrode including two sub-electrodes on a substrate in a duplexer according to an embodiment of the present invention;
FIG. 6 is a schematic diagram showing a cross-sectional structure of a quad-pod according to an embodiment of the present invention;
fig. 7 is a schematic cross-sectional structure of a first upper electrode, a first piezoelectric layer, and a first lower electrode in a four-frequency series resonator;
fig. 8 shows a projection view of 4 sub-electrodes of a first lower electrode of a four-frequency series resonator on a substrate in a quad-pod according to an embodiment of the present invention;
Fig. 9 is a schematic diagram showing a sectional structure of a mass load layer, a second upper electrode, a second piezoelectric layer, and a second lower electrode in the four-frequency parallel resonator;
fig. 10 shows a projection view of 4 sub-electrodes of the second lower electrode of the four-frequency parallel resonator on a substrate in a quad-resonator according to an embodiment of the present invention.
Wherein the above figures include the following reference numerals:
a diplexer:
10. a substrate; 009. a dual-frequency series resonator; 100. a dual-frequency parallel resonator; 210. a first upper electrode; 310. a first piezoelectric layer; 410. a first lower electrode; 501. a first sub-lower electrode; 601. a second sub-lower electrode; 90. a mass loading layer; 200. a second upper electrode; 300. a second piezoelectric layer; 401. a second lower electrode; 510. a third sub-lower electrode; 610. a fourth sub-lower electrode;
four-way:
10. a substrate; 101. a four-frequency series resonator; 102. a four-frequency parallel resonator; 201. a first upper electrode; 301. a first piezoelectric layer; 401. a first lower electrode; 501. a first sub-electrode; 601. a second sub-electrode; 701. a third sub-electrode; 801. a fourth sub-electrode; 90. a mass loading layer; 202. a second upper electrode; 302. a second piezoelectric layer; 402. a second lower electrode;
and
10', a substrate; 20', a first lower electrode; 30', a first piezoelectric layer; 40', a first upper electrode; 50', a second piezoelectric layer; 60', a second electrode layer; 90', mass loading layer.
Detailed Description
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As mentioned in the background, with the development of the technology, it is desired that the diplexer is compact and lightweight. In the prior art, a duplexer is generally formed by stacking a piezoelectric layer on a single resonator in a secondary deposition manner, however, the thickness of the piezoelectric layer occupies a large part of the thickness of the resonator due to the secondary deposition stacking, so that the size of the single resonator in the vertical direction is increased, and space is further wasted due to the fact that part of the piezoelectric layer in the vertical direction does not act on a device, and the size of a product is directly increased.
In order to solve the above technical problems, the present inventors provide a multiplexer, which includes: a substrate having a first surface; the multi-frequency series resonator is arranged on the first surface and is provided with a first laminated structure, the first laminated structure comprises at least two first working areas, each first working area comprises a first lower electrode, a first piezoelectric layer and a first upper electrode which are sequentially laminated along a first direction, the first direction is a direction far away from the substrate, and the working frequencies of the adjacent first working areas are different; the multi-frequency parallel resonator is arranged on the first surface and is adjacent to the multi-frequency series resonator, the multi-frequency parallel resonator is provided with a second laminated structure, the second laminated structure comprises at least two second working areas, each second working area comprises a second lower electrode, a second piezoelectric layer, a second upper electrode and a mass load layer, the second lower electrode, the second piezoelectric layer, the second upper electrode and the mass load layer are sequentially laminated along the first direction, and the working frequencies of the adjacent second working areas are different.
In an exemplary embodiment, in a case where the multifrequency series resonator includes two first operation regions and the multifrequency parallel resonator includes two second operation regions, the multiplexer is a duplexer; in an exemplary embodiment, in a case where the multi-frequency series resonator includes four first operation regions and the multi-frequency parallel resonator includes four second operation regions, the multiplexer is a quad-multiplexer; in an exemplary embodiment, in a case where the multifrequency series resonator includes six first operation regions and the multifrequency parallel resonator includes six second operation regions, the multiplexer is a six-multiplexer.
The mass load layer has a frequency adjusting function, and can be of a single-layer structure or a multi-layer structure so as to achieve the effect of adjusting the frequency of the resonator for receiving the sound wave signals according to different requirements. For the purpose of further adjusting the frequency range of the resonator for receiving the acoustic wave signal, a mass loading layer is typically formed on the side of the second upper electrode away from the second piezoelectric layer, so that the film thickness of the resonator structure is increased by the mass loading layer 90 on the basis of having the second upper electrode, the second piezoelectric layer and the second lower electrode, thereby being capable of receiving the acoustic wave signal of a smaller frequency when receiving the acoustic wave signal of a multi-frequency band. Further, in this embodiment, the mass loading layer with a single layer structure can achieve the effect of adjusting the frequency, so that the process steps for manufacturing the resonator in the multiplexer are further reduced.
In the above embodiment, the material of the mass loading layer may be the same as that of the second upper electrode, wherein the material of the mass loading layer may be any one of molybdenum (Mo), tungsten (W), aluminum (Al), titanium (Ti), chromium (Cr), copper (Cu), platinum (Pt), gold (Au), and the like.
In the above embodiment, the multi-frequency series resonator and the multi-frequency parallel resonator in the multiplexer are adjacently disposed on the first surface of the substrate, where the multi-frequency series resonator has a first laminated structure, the multi-frequency parallel resonator has a second laminated structure, and since the first laminated structure includes at least two first working areas, the second laminated structure also includes at least two second working areas, so that in the case that the multiplexer is in an operating state, the at least two first working areas and the at least two second working areas can be used as working areas of the multiplexer, and further in the case that the multi-frequency series resonator and the parallel resonator of the multiplexer are both located on the first surface of the substrate, the purpose of dividing the signal spectrum into multiple frequency ranges can be achieved due to the difference of the working frequencies between the two adjacent first working areas and the difference of the working frequencies between the two adjacent second working areas. Compared with the mode of forming the dual-frequency parallel resonator by secondarily depositing the piezoelectric layer on the dual-frequency series resonator in the prior art, the series resonator and the parallel resonator in the duplexer in the prior art are arranged in a laminated mode, so that the thickness of the duplexer in the direction far away from the substrate is thicker, the size of a single resonator in the duplexer in the direction perpendicular to the substrate can be increased, further the space of the duplexer is wasted, the size of the duplexer is directly increased, the multi-frequency series resonator and the multi-frequency parallel resonator in the invention are not arranged in a laminated mode, but are directly arranged on the first surface of the substrate in an adjacent mode, and further the thickness of the multiplexer in the direction perpendicular to the substrate is far smaller than the thickness of the multiplexer in the direction perpendicular to the substrate in the prior art.
The materials of the first upper electrode, the first lower electrode, the second upper electrode, and the second lower electrode may be the same or different, and the materials of the first upper electrode, the first lower electrode, the second upper electrode, and the second lower electrode may be any one of molybdenum (Mo), tungsten (W), aluminum (Al), titanium (Ti), chromium (Cr), copper (Cu), platinum (Pt), gold (Au), and the like.
The materials of the first piezoelectric layer and the second piezoelectric layer may be any one or a combination of a plurality of aluminum nitride, zinc oxide, lithium niobate, lead zirconate titanate piezoelectric ceramics and barium sodium niobate.
In some alternative embodiments, the plurality of first working areas are staggered.
In the above embodiment, each of the first working regions includes the first lower electrode, the first piezoelectric layer, and the first upper electrode, which are stacked, and if there are a plurality of the first working regions, there are a plurality of the first upper electrodes and the first lower electrodes. Optionally, the plurality of first lower electrodes are arranged in a staggered manner, the plurality of first upper electrodes are arranged in a staggered manner, and the plurality of first working areas have different working frequencies, so that after the plurality of first lower electrodes and the plurality of first upper electrodes are arranged at intervals, an overlapping area among each first lower electrode, the first piezoelectric layer and the first upper electrode can be used as an effective area for receiving or transmitting acoustic signals of different frequency bands, and therefore acoustic waves of the received multi-frequency band signals are separated and received or transmitted by different first working areas, and filtering of the acoustic signals can be achieved.
The plurality of first lower electrodes and the plurality of first upper electrodes may be alternately arranged on the substrate in a direction perpendicular to the stacking direction of the first upper electrodes, the first piezoelectric layer, and the first lower electrodes, and the plurality of first lower electrodes may be a plurality of first lower electrodes, which are sequentially arranged, for example, as a first sub-electrode, a second sub-electrode, and a third sub-electrode, respectively, wherein the first sub-electrode may be a first sub-electrode at any one end of the first lower electrodes that are alternately arranged, such that a second sub-electrode adjacent to the first sub-electrode, a third sub-electrode adjacent to the second sub-electrode, and the like are sequentially arranged in a direction parallel to the substrate, such that the plurality of sub-electrodes are sequentially arranged, and a plurality of first lower electrodes located in a plurality of first operation regions in the series resonator are configured. Further, the plurality of first lower electrodes may further include a first sub-electrode, and a second sub-electrode, a third sub-electrode, a fourth sub-electrode, or more sub-electrodes disposed adjacent to each other in order along a distance from the first sub-electrode.
In some alternative embodiments, the plurality of second working areas are staggered.
In the above embodiment, each of the second working regions includes the second lower electrode, the second piezoelectric layer, and the second upper electrode, which are stacked, and if there are a plurality of the second working regions, there are a plurality of the second upper electrodes and the second lower electrodes. Optionally, the plurality of second lower electrodes are arranged in a staggered manner, the plurality of second upper electrodes are arranged in a staggered manner, and the plurality of second working areas have different working frequencies, so that after the plurality of second lower electrodes and the plurality of second upper electrodes are arranged at intervals, the overlapping area among each second lower electrode, the second piezoelectric layer and the second upper electrode can be used as an effective area for transmitting or receiving sound wave signals of different frequency bands, and therefore sound waves of the received multi-frequency band signals are separated and received or transmitted by the different second working areas, and filtering of the sound wave signals can be achieved.
Accordingly, the plurality of second lower electrodes and the plurality of second upper electrodes may be alternately arranged on the substrate in a direction perpendicular to the stacking direction of the second upper electrodes, the second piezoelectric layers, and the second lower electrodes, and the plurality of second lower electrodes may be, for example, a plurality of second lower electrodes in which the plurality of second lower electrodes are sequentially arranged as a first sub-electrode, a second sub-electrode, a third sub-electrode, and the like, respectively, wherein the first sub-electrode may be a first sub-electrode of any one end of the second lower electrodes that are alternately arranged, such that a second sub-electrode adjacent to the first sub-electrode, a third sub-electrode adjacent to the second sub-electrode, and the like are sequentially arranged in a direction parallel to the substrate, such that the plurality of sub-electrodes are sequentially arranged, and the plurality of second lower electrodes located in the plurality of second working areas constitute the series resonator. Further, the plurality of second lower electrodes may further include a first sub-electrode, and a second sub-electrode, a third sub-electrode, a fourth sub-electrode, or more sub-electrodes disposed adjacent to each other in order along a distance from the first sub-electrode.
In some alternative embodiments, the cross-sectional shape of the first lower electrode and the cross-sectional shape of the second lower electrode are closed patterns formed by straight lines and/or curved lines in a direction perpendicular to the first direction.
In an exemplary case where the cross-sectional shapes of the first lower electrode and the second lower electrode in the vertical first direction are closed patterns formed by straight lines, the projections of the first lower electrode and the second lower electrode on the substrate may be N-sided shapes, and in an exemplary case, a plurality of N-sided shapes corresponding to the plurality of first lower electrodes may be closed patterns adjacently disposed along the second direction; or, for example, a plurality of N-polygons corresponding to a plurality of the first lower electrodes may be closed figures arranged in the same manner as the "mouth" shape in the "field" shape; or, illustratively, the plurality of N-polygons corresponding to the plurality of first lower electrodes may be closed patterns in which smaller N-polygons are disposed in larger N-polygons; or, for example, in the case where the cross-sectional shapes of the first lower electrode and the second lower electrode in the vertical first direction are closed patterns formed by curves, the closed patterns formed by the plurality of first lower electrodes or the plurality of second lower electrodes may be concentric circles.
In some alternative embodiments, the at least two first working areas comprise a first sub-working area and at least one second sub-working area, each second sub-working area being circumferentially disposed about the periphery of the first sub-working area.
In the above embodiment, the at least two first working areas include a first sub-working area and at least one second sub-working area, and accordingly, since each first sub-working area includes one first sub-lower electrode and each second sub-working area includes one second sub-lower electrode, the at least two first working areas include a plurality of sub-electrodes;
the projection of the plurality of sub-electrodes on the substrate is in a closed surrounding mode, specifically, the plurality of sub-electrodes comprise a first sub-lower electrode positioned at a central position and at least one second sub-lower electrode surrounding the periphery of the first sub-lower electrode, wherein the second sub-lower electrode can be one, so that a resonator with the first sub-lower electrode and the second sub-lower electrode can receive or transmit signals in two frequency ranges from multi-frequency band signals, signals in unnecessary frequency bands are restrained, and a filtering effect of receiving or transmitting signals in the two frequency ranges only is achieved. Further, the plurality of second sub-lower electrodes may include a first second sub-lower electrode adjacent to the first sub-lower electrode, a second sub-lower electrode adjacent to the first second sub-lower electrode, and a third second sub-lower electrode adjacent to the second sub-lower electrode, or a plurality of second sub-lower electrodes disposed along a direction away from the first sub-lower electrode and surrounding the outermost sub-electrode, so as to achieve a filtering effect of receiving signals of a plurality of frequency bands and suppressing signals of an unnecessary frequency band. Alternatively, the arrangement manner of the plurality of sub-electrodes may be that of a first sub-upper electrode and at least one second sub-upper electrode located in the first sub-working area;
In some alternative embodiments, the at least two second working areas comprise a third sub-working area and at least one fourth sub-working area, each fourth sub-working area being circumferentially disposed about the periphery of the third sub-working area.
In the above embodiment, the at least two second working areas include a third sub-working area and at least one fourth sub-working area, and accordingly, since each third sub-working area includes one third sub-lower electrode and each fourth sub-working area includes one fourth sub-lower electrode, the at least two first working areas and the at least two second working areas include a plurality of sub-electrodes.
The projection of the plurality of sub-electrodes on the substrate is in a closed surrounding mode, specifically, the plurality of sub-electrodes comprise a third sub-lower electrode positioned at a central position and at least one fourth sub-lower electrode surrounding the periphery of the third sub-lower electrode, wherein the fourth sub-lower electrode can be one, so that a resonator with the third sub-lower electrode and the fourth sub-lower electrode can receive or transmit signals in two frequency ranges from multi-frequency band signals, signals in unnecessary frequency bands are restrained, and a filtering effect of receiving or transmitting signals in the two frequency ranges only is achieved. Further, the plurality of fourth sub-lower electrodes may include a first fourth sub-lower electrode adjacent to the third sub-lower electrode, a second fourth sub-lower electrode adjacent to the first fourth sub-lower electrode, and a third fourth sub-lower electrode adjacent to the second fourth sub-lower electrode, or a plurality of fourth sub-lower electrodes disposed along a direction away from the third sub-lower electrode and surrounding the outermost sub-electrode, so as to achieve a filtering effect of receiving signals of a plurality of frequency bands and suppressing signals of an unnecessary frequency band. Alternatively, the arrangement of the plurality of sub-electrodes may be that of a third sub-upper electrode and at least one fourth sub-upper electrode located in a third sub-working area; in some alternative embodiments, the electrode material of the third sub-lower electrode is different from the electrode material of the fourth sub-lower electrode in the at least one fourth sub-operating region. Further, different electrode materials are represented by different fill lines.
In some alternative embodiments, the electrode material of the first sub-lower electrode in the first sub-working area and the electrode material of the second sub-lower electrode in the at least one second sub-working area are different.
In the above embodiment, since different electrode materials have different acoustic impedances, the electrode materials of the first sub-lower electrode and the second sub-lower electrode are different, so that the purpose of filtering is achieved by the different acoustic impedances of the acoustic waves of the first sub-lower electrode or the different second sub-lower electrode.
Specifically, the electrode materials of the first sub-lower electrode and the at least one second sub-lower electrode may be regularly arranged. For example, in the case where at least one of the second sub-lower electrodes is disposed around the outer periphery of the first sub-lower electrode, the above-mentioned rule may be that the acoustic impedance corresponding to the electrode material of the different sub-lower electrode increases or decreases in the lamination direction away from the first sub-lower electrode and from the inside to the outside, for example, the electrode material as the first sub-lower electrode may be set to be an electrode material having a larger acoustic impedance, the acoustic impedance corresponding to the electrode material of the first second sub-lower electrode surrounding the first sub-lower electrode is smaller than the acoustic impedance corresponding to the electrode material of the first sub-lower electrode, and the acoustic impedance corresponding to the electrode material of the second sub-lower electrode is smaller than the acoustic impedance corresponding to the electrode material of the first second sub-lower electrode, the acoustic impedance corresponding to the electrode material of the third second sub-lower electrode is smaller than the acoustic impedance corresponding to the electrode material of the second sub-lower electrode, and so on. Or the electrode materials of the first sub-electrode and the at least one second sub-lower electrode may be arranged in an out-of-order manner, that is, the acoustic impedance corresponding to the electrode material of the first sub-lower electrode may be greater than the acoustic impedance corresponding to the electrode material of the first second sub-lower electrode, the acoustic impedance corresponding to the electrode material of the second sub-lower electrode may be greater than the acoustic impedance corresponding to the electrode material of the third sub-lower electrode, and so on. In an exemplary case where the total number of the first sub-lower electrodes and the at least one second sub-lower electrode is four sub-lower electrodes and the corresponding arrangement is the same as that of the "mouth" in the "pan" shape, the above-mentioned first sub-lower electrodes and the at least one second sub-lower electrodes and the four sub-lower electrodes including four different materials divide the projection of the first sub-lower electrodes in the first working area into four parts, and accordingly, the four parts of projection may exhibit the "mouth" shape arrangement in the "pan" shape, or the above-mentioned first sub-lower electrodes and the above-mentioned at least one second sub-lower electrodes may be arranged at four right angle positions of the first lower electrodes in the first working area, thereby dividing the first lower electrodes into 5 sub-electrodes having 5 different materials, and the electrode materials of the 5 sub-electrodes may be different from each other, thereby achieving the purpose of achieving the filter effect of the resonator according to the different acoustic impedances of the different electrode materials.
In some alternative embodiments, since the resonant frequency of the resonator is determined by the sound velocity of sound waves propagating in the direction perpendicular to the substrate and the thicknesses of the upper electrode, the piezoelectric layer and the lower electrode of the resonator, in order to enable the filtering of radio frequency signals from different frequency bands according to the multiple frequency series resonator and the different sub-electrodes of the multiple frequency parallel resonator which are located on the same horizontal plane, materials of the first lower electrode, the at least two second lower electrodes, the third lower electrode and the at least two fourth lower electrodes of the resonator are changed, so that acoustic impedances of the multiple frequency series resonator and the different sub-electrodes of the multiple frequency parallel resonator are changed, so that when sound waves pass through the different sub-electrodes, the sound waves can pass through the different sub-electrodes at different speeds due to the effect of the different acoustic impedances, so that the purpose of separating multiple frequency band signals according to the electrode materials of the different sub-electrodes can be different, and multiple resonance peaks can occur due to the material difference of the different sub-electrodes of the resonator, so that the multiple resonance peaks can be prepared. Furthermore, the number of the sub-electrodes can be reasonably designed according to the number of frequency band signals actually required.
The materials of the first upper electrode and the first lower electrode of the multi-frequency series resonator, and the second upper electrode and the second lower electrode of the multi-frequency parallel resonator are all conductive materials, and the materials of the first upper electrode, the first lower electrode, the second upper electrode and the second lower electrode can be the same or different. The thicknesses of the first upper electrode, the first piezoelectric layer and the first lower electrode in the first direction, and the thicknesses of the second lower electrode, the second piezoelectric layer and the second upper electrode in the first direction are not changed, so that the difference of the frequency of the receiving or transmitting signals of the resonator is realized, and materials of the sub-electrodes forming the first upper electrode, the first lower electrode, the second upper electrode and the second lower electrode are not limited to one material. Illustratively, the material of the sub-electrode may be arbitrarily selected from one of molybdenum (Mo), gold (Au), titanium (Ti), aluminum (Al), chromium (Cr), copper (Cu), platinum (Pt), gold (Au), so that one resonator can derive 2 resonance peaks or 3 resonance peaks or 4 resonance peaks, etc. in a main mode, thereby achieving the purpose of differentiation of the frequency of the received or transmitted signal, and further, the number of resonance peaks is determined by the kind and distribution of the material of the electrode.
In some alternative embodiments, the projected area of the first sub-working area on the substrate is a first area, the projected area of the at least one second sub-working area on the substrate is a second area, and the first area is not equal to the second area.
Since the first laminated structure is a first lower electrode, a first piezoelectric layer and a first upper electrode which are laminated in sequence, when a radio frequency excitation signal is applied to the first lower electrode, an electric field deforms the piezoelectric material in the lamination direction of the first lower electrode, the first piezoelectric layer and the first upper electrode due to the inverse piezoelectric effect of the piezoelectric material of the first piezoelectric layer, and then mechanical vibration is generated to form elastic waves, and therefore, the size of the overlapping area of the first upper electrode, the first piezoelectric layer and the first lower electrode on the substrate along the lamination direction of the first lower electrode, the first piezoelectric layer and the first upper electrode can influence the capability of the resonator to receive or transmit resonance signals. Further, by setting that the projection area of the first sub-working area on the substrate is not equal to the projection area of the at least one second sub-working area on the substrate, the projection area of the first sub-lower electrode corresponding to the first sub-working area on the substrate is different from the projection area of the second sub-lower electrode corresponding to the at least one second sub-working area on the substrate, so that the sub-electrode with larger projection area has stronger capability of receiving resonance signals under the interaction of the sub-electrode with larger projection area, the first piezoelectric layer and the first upper electrode, and the resonator with the sub-electrode with larger projection area has better filtering effect.
In some alternative embodiments, in the case that the projection intervals of adjacent different sub-electrodes are equal, the projection area of the sub-electrode positioned at the outermost side is the largest, so that the sub-electrode positioned at the outermost side can have better filtering effect. The projection of the first sub-lower electrode on the substrate is a first projection, the projection of the first second sub-lower electrode on the substrate is a second projection, the projection of the second sub-lower electrode 70 on the substrate is a third projection, the projection of the third second sub-lower electrode on the substrate is a fourth projection, and the projection of the fourth second sub-lower electrode on the substrate is a fifth projection, and in some alternative embodiments, the second projection surrounds the first projection, the third projection surrounds the second projection, the fourth projection surrounds the third projection, the fifth projection surrounds the fourth projection, and the fourth second sub-lower electrode has a better filtering effect by maximizing the fifth projection area when the intervals between the adjacent projections are equal.
In some alternative embodiments, the electrode material of the third sub-lower electrode and the electrode material of the at least one fourth sub-lower electrode in the third sub-working area are different.
In the above embodiment, since different electrode materials have different acoustic impedances, the electrode materials of the third sub-lower electrode and the fourth sub-lower electrode are different, so that the purpose of filtering is achieved by the different acoustic impedances of the sound waves of the third sub-lower electrode or the different fourth sub-lower electrode.
Specifically, the electrode materials of the third sub-lower electrode and the at least one fourth sub-lower electrode may be regularly arranged. For example, in the case where at least one fourth sub-lower electrode is disposed around the outer periphery of the third sub-lower electrode, the above-described rule may be that the acoustic impedance corresponding to the electrode material of the different sub-lower electrodes increases or decreases in the lamination direction away from the third sub-lower electrode and from the inside to the outside, for example, the electrode material as the third sub-lower electrode may be set to be an electrode material having a larger acoustic impedance, the acoustic impedance corresponding to the electrode material of the first fourth sub-lower electrode disposed around the third sub-lower electrode may be smaller than the acoustic impedance corresponding to the electrode material of the third sub-lower electrode, and the acoustic impedance corresponding to the electrode material of the second fourth sub-lower electrode may be smaller than the acoustic impedance corresponding to the electrode material of the first fourth sub-lower electrode, and the acoustic impedance corresponding to the electrode material of the third fourth sub-lower electrode may be smaller than the acoustic impedance corresponding to the electrode material of the second fourth sub-lower electrode, or the like. Or the electrode materials of the third sub-lower electrode and the at least one fourth sub-lower electrode may be arranged in an out-of-order manner, that is, the acoustic impedance corresponding to the electrode material of the third sub-lower electrode may be greater than the acoustic impedance corresponding to the electrode material of the first fourth sub-lower electrode, the acoustic impedance corresponding to the electrode material of the second fourth sub-lower electrode may be greater than the acoustic impedance corresponding to the electrode material of the third fourth sub-lower electrode, and so on. In an exemplary case where the total number of the third sub-lower electrode and the at least one fourth sub-lower electrode is four sub-lower electrodes and the corresponding arrangement is the same as that of the "mouth" in the "pan" shape, the above-mentioned third sub-lower electrode and the at least one fourth sub-lower electrode and the four sub-lower electrodes including four different materials divide the projection of the third sub-lower electrode in the second working area into four parts, and accordingly, the four parts of projection may exhibit the "mouth" shape arrangement in the "pan" shape, or the above-mentioned third sub-lower electrode and the above-mentioned at least one fourth sub-lower electrode may be arranged at four right angle positions of the second lower electrode in the second working area, thereby dividing the second lower electrode into 5 sub-electrodes having 5 different materials, the electrode materials of the 5 sub-electrodes may be mutually different, thereby achieving the purpose of achieving the filter action of the resonator according to the different acoustic impedances of the different electrode materials.
In some alternative embodiments, the projected area of the third sub-working area on the substrate is a third area, the projected area of the at least one fourth sub-working area on the substrate is a fourth area, and the third area is not equal to the fourth area.
Since the second laminated structure is a second lower electrode, a second piezoelectric layer and a second upper electrode which are laminated in sequence, wherein when a radio frequency excitation signal is applied to the second lower electrode, an electric field deforms the piezoelectric material in the lamination direction of the second lower electrode, the second piezoelectric layer and the second upper electrode due to the inverse piezoelectric effect of the piezoelectric material of the second piezoelectric layer, and thus mechanical vibration is generated to form an elastic wave, and therefore, the size of the overlapping area of the second upper electrode, the second piezoelectric layer and the second lower electrode on the substrate along the lamination direction of the second lower electrode, the second piezoelectric layer and the second upper electrode can influence the capability of the resonator to receive or transmit a resonance signal. Further, by setting the projection area of the third sub-working area on the substrate and the projection area of at least one fourth sub-working area on the substrate to be unequal, the projection area of the third sub-lower electrode corresponding to the third sub-working area on the substrate is different from the projection area of the fourth sub-lower electrode corresponding to the at least one fourth sub-working area on the substrate, so that the sub-electrode with larger projection area has stronger capability of receiving resonance signals under the interaction of the second piezoelectric layer and the second upper electrode, and the resonator with the sub-electrode with larger projection area has better filtering effect.
In some alternative embodiments, in the case that the projection intervals of adjacent different sub-electrodes are equal, the projection area of the sub-electrode positioned at the outermost side is the largest, so that the sub-electrode positioned at the outermost side can have better filtering effect. In an exemplary embodiment, the projection of the third sub-lower electrode on the substrate is a first projection, the projection of the first fourth sub-lower electrode on the substrate is a second projection, the projection of the second fourth sub-lower electrode on the substrate is a third projection, the projection of the third fourth sub-lower electrode on the substrate is a fourth projection, and the projection of the fourth sub-lower electrode on the substrate is a fifth projection, and in some alternative embodiments, the second projection surrounds the first projection, the third projection surrounds the second projection, the fourth projection surrounds the third projection, the fifth projection surrounds the fourth projection, and in the case that the intervals between the adjacent projections are equal, the fourth sub-lower electrode has a better filtering effect by maximizing the fifth projection area.
Alternatively, in order to form the first upper electrode and the first lower electrode, the second upper electrode, and the second lower electrode in the resonator described above, a combination of partial region etching and polishing may be employed. Illustratively, the first lower electrode is formed on the first surface and includes a first sub-lower electrode and a second sub-lower electrode. Specifically, in the process of forming the first bottom electrode, after the first bottom electrode material layer corresponding to the first bottom electrode is deposited and patterned to form the first bottom electrode, a second bottom electrode material layer corresponding to the second bottom electrode is deposited and formed on the first surface, so that the second bottom electrode material layer covers the first bottom electrode and the first surface, further covers the photoresist to a part of the surface of the second bottom electrode material layer, and a part of the surface of the second bottom electrode material layer far away from one side of the first bottom electrode is exposed, further, a part corresponding to the exposed surface, which is not covered by the photoresist, of the second bottom electrode material layer is removed by etching.
Optionally, in this embodiment, after the photoresist is covered on the second sub-lower electrode material layer, the photoresist, the second sub-lower electrode material layer, and the vertical projection of the first sub-lower electrode on the first surface have an overlapping area, further, when the area of the side surface of the first sub-lower electrode contacting the first surface is different from the area of the side surface of the first sub-lower electrode away from the first surface, the area of the overlapping area is made to be greater than or equal to a first threshold (where the first threshold may be the smallest projection of the end of the first sub-lower electrode away from the first surface on the first surface, and the largest projection of the first sub-lower electrode on the first surface, thereby making the above second sub-lower electrode material layer away from the exposed surface on the side of the first sub-lower electrode, and further, after removing the part of the second sub-lower electrode material layer corresponding to the exposed surface, the second sub-lower electrode material layer may exist, the area of the overlapping area is made to be greater than or equal to the first threshold (where the first threshold may be the smallest projection of the end of the first sub-lower electrode away from the first surface, and the first sub-lower electrode is made to have the same thickness as the first sub-lower electrode, and the first sub-lower electrode is made to have the same thickness on the first sub-lower electrode, and the first sub-lower electrode is made to have the same thickness, and the first sub-lower electrode is made to contact with the first sub-lower electrode is made to have the first electrode.
The polishing may be performed by using a pressure and material dual detection principle to ensure polishing accuracy, specifically, when the polishing pressure sensing area in the polishing machine detects a raised area, that is, detects an excessive second sub-lower electrode material layer, and further grinds and removes the portion, and after the removal, the pressure sensing changes, and simultaneously detects the first sub-lower electrode material corresponding to the first sub-lower electrode and the second sub-lower electrode material corresponding to the second sub-lower electrode, so that the polishing is completed, wherein, due to the polishing degree being ensured, excessive polishing does not occur, so that the thicknesses of the first sub-lower electrode material layer and the second sub-lower electrode material layer are not too thick or too thin. Therefore, on the premise of ensuring the precision, the deposition of the plurality of sub-lower electrode material layers is completed, the surfaces of the plurality of sub-lower electrode material layers are smooth, no material bulge or loss exists, the stability of frequency is ensured, and the problems that over etching is caused and electrode materials between the formed first lower electrode and the formed second lower electrode are lost due to overlay errors in the photoetching process caused by inaccurate coverage of photoresist are effectively avoided, so that the electric signals of a resonator and a filter are further influenced.
Illustratively, as shown in fig. 2, a duplexer is provided that includes one dual-frequency series resonator 009 and one dual-frequency parallel resonator 100 on a substrate 10, and the dual-frequency series resonator 009 and the dual-frequency parallel resonator 100 are juxtaposed on a first surface of the substrate 10.
Wherein, as shown in FIG. 3, the dual-frequency series resonator 009 comprises a first upper electrode 210, a first piezoelectric layer 310 and a first lower electrode 410, wherein the first lower electrode 410 is composed of a first sub-lower electrode 501 and a second sub-lower electrode 601, the electrode materials of the first sub-lower electrode 501 and the second sub-lower electrode 601 are different, so that the operation area of the dual-frequency series resonator 009 is divided into two parts, namely, one part is a first sub-operation area with the first sub-lower electrode 501 as the first lower electrode 410, and the resonance frequency of the first sub-operation area is set as f 1 The method comprises the steps of carrying out a first treatment on the surface of the Another part is a second sub-operation area with the second sub-lower electrode 601 as the first lower electrode 410, and the resonance frequency of the second sub-operation area is set to be f 2 F is because propagation speeds (sound speeds) of sound waves in different materials of the first sub-lower electrode 501 and the second sub-lower electrode 601 are not uniform 1 And f 2 Inconsistent, and f 1 Can be greater than f 2 May be f 1 Less than f 2 。
As shown in fig. 4, the dual-band parallel resonator 100 includes a mass loading layer 90, a second upper electrode 200, a second piezoelectric layer 300, and a second lower electrode 401, wherein the second lower electrode 401 is composed of a third sub-lower electrode 510 and a fourth sub-lower electrode 610, electrode materials of the third sub-lower electrode 510 and the fourth sub-lower electrode 610 are different, so that an operation area of the dual-band parallel resonator is divided into two parts, that is, a part is a third sub-operation area using the third sub-lower electrode 510 as the second lower electrode 401, and a resonance frequency of the third sub-operation area is set to f 1 -Δf，Δf>0, wherein Δf is the difference value due to the fact that there is also a mass loading layer 90 in the resonator; another part is a fourth sub-lower electrode610 as a fourth sub-operation region of the second lower electrode 401 and setting the resonance frequency of the fourth sub-operation region to f 2 Δf, where Δf is the difference value due to the fact that there is also a mass loading layer 90 in the resonator. Similarly, f 1 - Δf and f 2 Δf is inconsistent, and f is 1 Δf may be greater than f 2 -Δf，f 1 Δf may also be less than f 2 - Δf. Alternatively, the fourth sub-lower electrode 610 is disposed at the outer circumference of the third sub-lower electrode 510 as shown in fig. 5.
In some alternative embodiments, the thicknesses of the lower electrode, the upper electrode, and the piezoelectric layer of the multi-frequency series resonator and the multi-frequency parallel resonator are the same. In the above embodiments, the sum of the thicknesses of the lower electrode, the upper electrode, and the piezoelectric layer in the multi-frequency series resonator and the multi-frequency parallel resonator is set to be equal, and the process steps for manufacturing the resonators can be simplified.
In some alternative embodiments, by adjusting the number of sub-electrodes in the multiplexer, different first, second, third and fourth operating regions can be formed, so that the occurrence of resonance peaks of resonators in the filter can be purposefully adjusted, thereby achieving an optimization of the filter performance.
Illustratively, the multiplexer is a quad-multiplexer, which includes a quad-frequency series resonator 101 and a quad-frequency parallel resonator 102 disposed on the substrate 10, as shown in fig. 6.
Wherein, as shown in FIG. 7, the four-frequency series resonator 101 comprises a first upper electrode 201, a first piezoelectric layer 301 and a first lower electrode 401, wherein the first lower electrode 401 is composed of 4 electrode materials, the sub-electrodes of the 4 electrode materials can comprise a first sub-electrode 50, a second sub-electrode 60 adjacent to the first sub-electrode 50, a third sub-electrode 70 adjacent to the second sub-electrode 60 and a fourth sub-electrode 80 adjacent to the third sub-electrode 70, thereby dividing the operation area of the four-frequency series resonator 101 into four parts, and setting the resonance frequencies of the four operation areas to be f respectively 3 、f 4 、f 5 、f 6 . Due to non-uniformity of propagation speeds (sound speeds) of sound waves in different materialsThus f 3 、f 4 、f 5 、f 6 Are inconsistent with each other, wherein f 3 、f 4 、f 5 、f 6 The magnitude relation of (2) may be arbitrary.
As shown in fig. 8, the first bottom electrode 401 of the four-frequency series resonator 101 includes 4 sub-electrodes, which are the first sub-electrode 50, the second sub-electrode 60 adjacent to the first sub-electrode 50, the third sub-electrode 70 adjacent to the second sub-electrode 60, and the fourth sub-electrode 80 adjacent to the third sub-electrode 70, or more sub-electrodes which are circumferentially arranged around the outermost sub-electrode along the direction away from the first sub-electrode 50, so that it is possible to receive signals of more frequency bands and suppress the filtering effect of signals of unnecessary frequency bands.
As shown in fig. 9, the four-frequency parallel resonator 102 includes a mass loading layer 90, a second upper electrode 202, a second piezoelectric layer 302 and a second lower electrode 402, wherein the second lower electrode 402 is composed of 4 electrode materials, the sub-electrodes of the 4 electrode materials may include a first sub-electrode 501, a second sub-electrode 601 adjacent to the first sub-electrode 501, a third sub-electrode 701 adjacent to the second sub-electrode 601 and a fourth sub-electrode 801 adjacent to the third sub-electrode 701, so that the operation area of the four-frequency parallel resonator 102 is divided into four parts, and the resonance frequencies of the four operation areas are f respectively 3 -Δf、f 4 -Δf、f 5 -Δf、f 6 Δf, where Δf is the difference value due to the mass loading layer 90 also being present in the resonator. Similarly, f 3 -Δf、f 4 -Δf、f 5 -Δf、f 6 Δf are not identical to each other, and the magnitude relationship may be arbitrary.
As shown in fig. 10, the materials of the 4 sub-electrodes of the four-frequency series resonator 101 and the four-frequency parallel resonator 102 may be the same, specifically, the sub-electrodes of the 4 sub-electrode materials include a first sub-electrode 501, a second sub-electrode 601 adjacent to the first sub-electrode 501, a third sub-electrode 701 adjacent to the second sub-electrode 601, and a fourth sub-electrode 801 adjacent to the third sub-electrode 701, or more sub-electrodes disposed along a direction away from the first sub-electrode 501 and surrounding the outermost sub-electrode, so as to achieve a signal receiving function of more frequency bands, and suppress a filtering effect of a signal of an unnecessary frequency band.
The projections of the first sub-electrode 50, the second sub-electrode 60, the third sub-electrode 70 and the fourth sub-electrode 80 on the substrate 10 are arranged according to the above-mentioned sequential surrounding manner, so that the propagation speeds of the acoustic waves corresponding to the first sub-electrode 50, the second sub-electrode 60, the third sub-electrode 70 and the fourth sub-electrode 80 are different, and the magnitude of the propagation speeds of the acoustic waves in the four sub-electrodes may be orderly or unordered. Further, the propagation of the acoustic wave in the four electrode materials of the four sub-electrodes is ordered, i.e. the propagation velocity of the acoustic wave in the first sub-electrode 50, the second sub-electrode 60, the third sub-electrode 70 and the fourth sub-electrode 80 is v in sequence 3 、v 4 、v 5 、v 6 And v 3 >v 4 >v 5 >v 6 In the four-frequency series resonator, f 3 >f 4 >f 5 >f 6 In the four-frequency parallel resonator (f 3 -Δf)>(f 4 -Δf)>(f 5 -Δf)>(f 6 - Δf). The quadplexer is a first frequency band, a second frequency band, a third frequency band, and a fourth frequency band in order from the low frequency band to the high frequency band, as shown in table 1.
Wherein f 6 As a series resonance frequency of the first frequency band, (f 6 Δf) as a parallel resonant frequency of the first frequency band; f (f) 5 As a series resonance frequency of the second frequency band, (f 5 Δf) as a parallel resonant frequency of the second frequency band; f (f) 4 As a series resonance frequency of the third frequency band, (f 4 Δf) as a parallel resonant frequency of the third frequency band; f (f) 3 As a series resonance frequency of the fourth frequency band, (f 3 Δf) as the parallel resonant frequency of the fourth frequency band. Thus f 6 And f 6 Δf forms a first set of filters, f 5 And f 5 - Δf forms a second set of filters, f 4 And f 4 - Δf forms a third set of filters, f 3 And f 3 Δf constitutes a fourth set of filters. The four-way device is integrally formed.
From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:
by adopting the resonator structure, the multi-frequency series resonators and the multi-frequency parallel resonators in the multiplexer are adjacently arranged on the first surface of the substrate, wherein the multi-frequency series resonators are provided with the first laminated structure, the multi-frequency parallel resonators are provided with the second laminated structure, and the first laminated structure comprises at least two first working areas, and the second laminated structure also comprises at least two second working areas, so that the at least two first working areas and the at least two second working areas can be used as working areas of the multiplexer under the condition that the multiplexer is in a working state, and further, due to the different working frequencies between the two adjacent first working areas and the different working frequencies between the two adjacent second working areas, the purpose of dividing a signal spectrum into a plurality of frequency ranges can be realized under the condition that the multi-frequency series resonators and the multi-frequency parallel resonators of the multiplexer are both positioned on the first surface of the substrate. Compared with the mode of forming the dual-frequency parallel resonator by secondarily depositing the piezoelectric layer on the dual-frequency series resonator in the prior art, the series resonator and the parallel resonator in the duplexer in the prior art are arranged in a laminated mode, so that the thickness of the duplexer in the direction far away from the substrate is thicker, the size of a single resonator in the duplexer in the direction perpendicular to the substrate can be increased, further the space of the duplexer is wasted, the size of the duplexer is directly increased, the multi-frequency series resonator and the multi-frequency parallel resonator in the invention are not arranged in a laminated mode, but are directly arranged on the first surface of the substrate in an adjacent mode, and further the thickness of the multiplexer in the direction perpendicular to the substrate is far smaller than the thickness of the multiplexer in the direction perpendicular to the substrate in the prior art.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A multiplexer, comprising:
a substrate having a first surface;
a multi-frequency series resonator disposed on the first surface, the multi-frequency series resonator having a first stacked structure including at least two first operation regions, each of the first operation regions including a first lower electrode, a first piezoelectric layer, and a first upper electrode sequentially stacked along a first direction, the first direction being a direction away from the substrate, the operation frequencies of adjacent first operation regions being different;
a multi-frequency parallel resonator disposed on the first surface and adjacent to the multi-frequency parallel resonator, the multi-frequency parallel resonator having a second laminated structure including at least two second operation regions, each of the second operation regions including a second lower electrode, a second piezoelectric layer, a second upper electrode, and a mass load layer sequentially laminated along the first direction, the operation frequencies of the adjacent second operation regions being different;
The at least two first working areas comprise first sub-working areas and at least one second sub-working area, each first sub-working area comprises a first sub-lower electrode, and each second sub-working area comprises a second sub-lower electrode; the first sub-lower electrode and the at least one second sub-lower electrode are arranged at four right-angle positions of the first lower electrode in the first working area; the electrode material of the first sub-lower electrode in the first sub-working area is different from the electrode material of the second sub-lower electrode in the at least one second sub-working area; the projection area of the first sub-working area on the substrate is a first area, the projection of the at least one second sub-working area on the substrate is a second area, and the first area is unequal to the second area.
2. The multiplexer of claim 1, wherein a plurality of the first working areas are staggered.
3. The multiplexer of claim 1, wherein a plurality of the second working areas are staggered.
4. A multiplexer according to any one of claims 1 to 3, wherein the cross-sectional shape of the first lower electrode and the cross-sectional shape of the second lower electrode are closed figures formed by straight lines and/or curved lines in a direction perpendicular to the first direction.
5. A multiplexer according to any one of claims 1 to 3, wherein the at least two first working areas comprise a first sub-working area and at least one second sub-working area, each second sub-working area being circumferentially disposed about the periphery of the first sub-working area.
6. A multiplexer according to any one of claims 1 to 3, wherein the at least two second working areas comprise a third sub-working area and at least one fourth sub-working area, each of the fourth sub-working areas being circumferentially disposed about the periphery of the third sub-working area.
7. The multiplexer of claim 6, wherein the electrode material of the third sub-lower electrode in the third sub-operating region is different from the electrode material of the fourth sub-lower electrode in the at least one fourth sub-operating region.
8. The multiplexer of claim 6, wherein a projected area of the third sub-working area on the substrate is a third area, a projected area of the at least one fourth sub-working area on the substrate is a fourth area, and the third area is not equal to the fourth area.
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| US7242130B2 (en) * | 2003-11-07 | 2007-07-10 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric device, antenna duplexer, and method of manufacturing piezoelectric resonators used therefor |
| CA2569533A1 (en) * | 2004-07-06 | 2006-01-12 | Telefonaktiebolaget Lm Ericsson (Publ) | A tuneable resonator |
| WO2006062083A1 (en) * | 2004-12-07 | 2006-06-15 | Matsushita Electric Industrial Co., Ltd. | Thin film elastic wave resonator |
| JP2007181087A (en) * | 2005-12-28 | 2007-07-12 | Toshiba Corp | Thin film piezoelectric resonator and filter circuit |
| JP4760931B2 (en) * | 2009-03-02 | 2011-08-31 | 株式会社デンソー | Surface acoustic wave device |
| CN102959991B (en) * | 2010-07-23 | 2015-10-21 | 日本电气株式会社 | Oscillator |
| CN102075161B (en) * | 2011-01-20 | 2013-06-05 | 张�浩 | Acoustic wave device and manufacturing method thereof |
| CN108173528A (en) * | 2018-02-01 | 2018-06-15 | 湖北宙讯科技有限公司 | Wave filter |
| US11264970B2 (en) * | 2019-03-02 | 2022-03-01 | Texas Instruments Incorporated | Piezoelectric resonator with patterned resonant confiners |
| CN110995199B (en) * | 2019-12-17 | 2022-02-01 | 武汉大学 | Duplexer |
| CN115733457A (en) * | 2021-08-27 | 2023-03-03 | 诺思(天津)微系统有限责任公司 | Method for manufacturing bulk acoustic wave resonator assembly |
| CN114584102A (en) * | 2022-03-11 | 2022-06-03 | 武汉敏声新技术有限公司 | Radio frequency resonator and filter |
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