CN115987110A - High-efficiency rectification surface of high-integration-level multi-diode structure - Google Patents

High-efficiency rectification surface of high-integration-level multi-diode structure Download PDF

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Publication number
CN115987110A
CN115987110A CN202211403937.4A CN202211403937A CN115987110A CN 115987110 A CN115987110 A CN 115987110A CN 202211403937 A CN202211403937 A CN 202211403937A CN 115987110 A CN115987110 A CN 115987110A
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China
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receiving unit
energy receiving
direct current
rectifying surface
symmetrical
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CN202211403937.4A
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Chinese (zh)
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程飞
王怀玉
杜春宏
黄卡玛
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Sichuan University
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Sichuan University
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Priority to CN202211403937.4A priority Critical patent/CN115987110A/en
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Abstract

The invention discloses a high-efficiency rectifying surface of a high-integration multi-diode structure, which solves the problems of low integration level, low efficiency and small power capacity of a rectifying surface circuit. The lower surface of the rectification surface medium substrate (1) is completely covered by a metal layer, the upper surface comprises m rows and n columns of rectification surface units (2) with the same size and shape, m and n are positive integers larger than or equal to 2, the rectification surface units (2) at corresponding positions of two adjacent rows are arranged in a crossed manner, the adjacent rectification surface units (2) in each row are connected left and right, two opening lines (24) which are symmetrical up and down are shared, the 1 st rectification surface unit (2) in each row is connected to a direct current output port A1 through a direct current synthesis network (3), the right side of the nth rectification surface unit (2) in each row is connected to the direct current output port A2 through the direct current synthesis network (3), and the A1 and the A2 are welded together through electric wires to serve as a total direct current output port.

Description

High-efficiency rectification surface of high-integration-level multi-diode structure
Technical Field
The invention belongs to the technical field of microwave radio frequency devices, and particularly relates to a rectifying surface in a microwave radio frequency device.
Background
The microwave rectification surface can capture spatial electromagnetic energy in a specific frequency range and convert the spatial electromagnetic energy into direct current electric energy by loading the Schottky diode on the surface of the periodic electromagnetic structure, and is widely applied to a remote wireless power transmission system and a wireless energy collection system. For example, in some remote areas where it is inconvenient to arrange power lines, the rectifying surface can be used for solving the problem that electric equipment in the areas is difficult to wire, and realizing long-distance transmission of power. On the other hand, in the field of the internet of things, the rectification surface can collect electromagnetic energy spread all over the space and convert the electromagnetic energy into direct current electric energy, so that the requirements of small and medium-sized low-power-consumption electronic equipment such as a sensor on direct current are met, the battery replacement is avoided, the problem of power supply of the electronic equipment is solved, the energy is recycled, the energy utilization rate is improved, and the purposes of energy conservation and emission reduction are achieved.
The document "a metrology for conversion of electromagnetic radiation to DC" proposes a super-surface electromagnetic energy collector based on an electrically small resonator, which can realize the collection and rectification of electromagnetic energy at an operating frequency of 3GHz, but because the matching network in the rectification surface is complex, the circuit loss is increased, the efficiency is reduced, and the miniaturization and integration of the rectification surface are not facilitated. The document "A mechanical electromagnetic energy recovery surface with high resonant efficiency" proposes a rectifying surface for electromagnetic energy collection with an operating frequency of 2.45 GHz. However, the rectifying surface adopts a multilayer structure, and the processing cost of the circuit board is high.
To sum up, the main problem faced by the current rectifying surface is how to simplify the matching circuit between the energy collecting unit and the rectifying portion, reduce the loss of the rectifying surface, improve the efficiency of the rectifying surface, and at the same time improve the integration level of the rectifying surface, increase its power capacity, and reduce the circuit processing cost.
Disclosure of Invention
The invention aims to provide a high-efficiency rectifying surface with a high-integration-level multi-diode structure, overcomes the defect that the existing rectifying surface matching circuit and an output end filter circuit are complex in structure, and solves the problems of low integration level and low power capacity of the existing rectifying surface.
The technical scheme of the invention is as follows: the lower surface of a dielectric substrate 1 is completely covered by a metal layer, the metal layer is a ground 4, the upper surface comprises m rows and n columns of rectifying surface units 2,m with the same size and shape, n is a positive integer larger than or equal to 2, the rectifying surface units 2 at corresponding positions of two adjacent rows are arranged in a crossed mode, adjacent units of the n rectifying surface units 2 in each row are connected left and right and share two opening lines 24 which are symmetrical up and down, the left side of the 1 st rectifying surface unit 2 in each row exclusively occupies the two opening lines 24 which are symmetrical up and down, the left side of the 1 st rectifying surface unit in each row is connected to a direct current output port A1 through a direct current synthesis network 3, the right side of the nth rectifying surface unit 2 in each row exclusively occupies the two opening lines 24 which are symmetrical up and down, the right side of the nth rectifying surface unit in each row exclusively occupies the direct current output port A2 through the direct current synthesis network 3, and the two direct current output ports A1 and A2 are welded together through electric wires to serve as a total direct current output port; each rectifying surface unit 2 comprises 1 energy receiving unit 21, 4 first microstrip lines 221, 2 second microstrip lines 222, 4 schottky diodes 23, 4 open lines 24 and 4 grounding bonding pads 25; the energy receiving unit 21 is located at the center position of the rectifying surface unit 2; the 4 first microstrip lines 221 are respectively located at the left and right ends of the energy receiving unit 21, are symmetrical with respect to the energy receiving unit 21 in the left-right direction and the up-down direction, deviate from the horizontal center line of the energy receiving unit 21 in the vertical direction, and have one end connected to the energy receiving unit 21 and the other end connected to the anode of the schottky diode 23; the 4 schottky diodes 23 are symmetrical left and right and up and down with respect to the center of the energy receiving unit 21, the anode end is connected to one end of the first microstrip line 221 far away from the energy receiving unit 21, and the cathode is connected to the grounding pad 25; the 4 grounding pads 25 are rectangular and are arranged transversely and are symmetrical left and right, up and down with respect to the energy receiving unit 21, wherein each grounding pad 25 comprises 4 grounding through holes 251 with the same size and shape, and the grounding through holes 251 are arranged equidistantly and transversely; the 2 second microstrip lines 222 are positioned on the left and right sides of the energy receiving unit 21, are bilaterally symmetrical with respect to the energy receiving unit 21, have one end connected to the central position of the vertical edge of the energy receiving unit 21, and have the other end connected to the open line 24; the 4 open lines 24 are rectangular, have the same size and shape, are longitudinally arranged integrally, are bilaterally symmetrical and are vertically symmetrical with respect to the energy receiving unit 21, the 2 open lines 24 are positioned at the leftmost side of the rectifying surface unit 2, the other 2 open lines are positioned at the rightmost side, and the upper and lower 2 open lines 24 are connected to the second microstrip line 222.
The principle of the technical scheme of the invention is as follows: the electromagnetic wave in the free space irradiates the rectifying surface, the energy receiving unit 21 on the rectifying surface receives the electromagnetic wave energy, the energy enters the schottky diode 23 through the first microstrip line 221 and is converted into direct current energy, the imaginary part of the schottky diode 23 is offset by the first microstrip line 221, the real part of the schottky diode is directly matched with the energy receiving unit 21, so that a matching circuit is simplified, the second microstrip line 222 is connected with the horizontal center of the energy receiving unit 21, the impedance of the part for the fundamental wave is 0, so that a filter circuit for the fundamental wave is omitted, the open line 24 only filters higher harmonics such as second harmonic and third harmonic, and finally, the direct current synthesizing network 3 only contains the direct current energy. The upper and lower rows of corresponding positions of the rectifying surface units 2 are arranged in a staggered manner to reduce the coupling between the rectifying surface units 2. And the adjacent rectifying surface units 2 in the same row share the open line 24, simplifying the direct current filter circuit. Each rectifying surface unit 2 comprises 4 schottky diodes 23 for increasing the power capacity of the rectifying surface. The dc energy of all the rectifying surface units 2 is combined by the dc combining network 3, and the ground 4 of the rectifying surface simultaneously serves as dc ground.
The invention has the advantages and beneficial effects that:
the high-efficiency rectifying surface of the high-integration-level multi-diode structure directly matches the Schottky diode with the energy receiving unit, and a fundamental wave filter circuit is omitted, so that the high-integration-level multi-diode structure has the advantages of simple structure, high integration level and high efficiency. Furthermore, each rectifying surface unit contains 4 diodes, increasing the power capacity of the rectifying surface. Because the rectifying surface is a single-layer circuit board, the rectifying surface is more convenient to process and lower in cost than the rectifying surface of a multilayer circuit.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention
FIG. 2 is a schematic view of a rectifying surface unit structure of the present invention
FIG. 3 is a side view of the overall structure of the present invention
FIG. 4 is a graph of the energy absorption efficiency simulation results for the fairing surface of the present invention
FIG. 5 is a graph of simulation results of the efficiency and output voltage of the rectifying surface unit of the present invention as a function of input power
Detailed Description
The invention is further described with reference to the following figures and specific embodiments: as shown in fig. 1, the lower surface of the finished surface dielectric substrate 1 is completely covered by a metal layer, the metal layer is a ground 4, the upper surface includes m rows and n columns of rectifying surface units 2,m with the same size and shape, n is a positive integer greater than or equal to 2, two adjacent rows of rectifying surface units 2 at corresponding positions are arranged in a crossed manner, adjacent units of n rectifying surface units 2 in each row are connected left and right, two open lines 24 which are symmetrical up and down are shared, the left side of the 1 st rectifying surface unit 2 in each row monopolizes two open lines 24 which are symmetrical up and down, the left side of the 1 st rectifying surface unit is connected to a direct current output port A1 through a direct current synthesis network 3, the right side of the nth rectifying surface unit 2 in each row monopolizes two open lines 24 which are symmetrical up and down, the right side of the nth rectifying surface unit 2 is connected to the direct current output port A2 through the direct current synthesis network 3, and the two direct current output ports A1 and A2 are welded together through an electric wire to serve as a total direct current output port; each rectifying surface unit 2 comprises 1 energy receiving unit 21, 4 first microstrip lines 221, 2 second microstrip lines 222, 4 schottky diodes 23, 4 open lines 24 and 4 grounding pads 25; the energy receiving unit 21 is located at the center position of the rectification surface unit 2; the 4 first microstrip lines 221 are respectively located at the left and right ends of the energy receiving unit 21, are symmetrical with respect to the energy receiving unit 21 in the left-right direction and the up-down direction, deviate from the horizontal center line of the energy receiving unit 21 in the vertical direction, and have one end connected to the energy receiving unit 21 and the other end connected to the anode of the schottky diode 23; the 4 schottky diodes 23 are symmetrical left and right and up and down with respect to the center of the energy receiving unit 21, the anode end is connected to one end of the first microstrip line 221 far away from the energy receiving unit 21, and the cathode is connected to the grounding pad 25; the 4 grounding pads 25 are rectangular and are arranged transversely and are symmetrical left and right, up and down with respect to the energy receiving unit 21, wherein each grounding pad 25 comprises 4 grounding through holes 251 with the same size and shape, and the grounding through holes 251 are arranged equidistantly and transversely; the 2 second microstrip lines 222 are positioned on the left and right sides of the energy receiving unit 21, are bilaterally symmetrical with respect to the energy receiving unit 21, have one end connected to the central position of the vertical edge of the energy receiving unit 21, and have the other end connected to the open line 24; the 4 open lines 24 are rectangular, have the same size and shape, are longitudinally arranged integrally, are bilaterally symmetrical and are vertically symmetrical with respect to the energy receiving unit 21, the 2 open lines 24 are positioned at the leftmost side of the rectifying surface unit 2, the other 2 open lines are positioned at the rightmost side, and the upper and lower 2 open lines 24 are connected to the second microstrip line 222.
To further illustrate the feasibility of the above technical solution, a specific design example is given below, the high-efficiency rectifying surface of the high-integration multi-diode structure is formed by using an F4B substrate with a thickness of 0.8mm and a relative dielectric constant of 2.6 as a dielectric substrate, and the schottky diode is BAT15-03W. 6 rows and 5 columns of rectifying surface units are distributed on the rectifying surface, and the direct current output adopts a parallel connection mode. And the direct current output end of the rectifying surface is connected with a 16.67 ohm load. When a uniform planar electromagnetic wave of 5.8GHz is irradiated onto the rectifying surface, the absorption efficiency of the rectifying surface for the electromagnetic wave is shown in fig. 4, and it can be seen that the absorption efficiency of the rectifying surface can be up to 99.7% at 5.8GHz, and the absorption efficiency is above 50% in the range of 5.5GHz-6.0 GHz. A simulation plot of the rectification efficiency and the output DC voltage generated by a single unit is shown in FIG. 5. A single unit can generate 5.66mW of DC power under 7.08mW of RF input power, and then the rectification surface can generate 169.86mW of DC output power, and the total DC output voltage is 3.6V.

Claims (1)

1. A high-efficiency rectifying surface of a high-integration-level multi-diode structure is characterized in that: the lower surface of a dielectric substrate (1) is completely covered by a metal layer, the metal layer is a ground (4), the upper surface comprises m rows and n columns of rectifying surface units (2) with the same size and shape, m and n are positive integers larger than or equal to 2, two adjacent rows of rectifying surface units (2) at corresponding positions are arranged in a crossed mode, adjacent units of n rectifying surface units (2) in each row are connected left and right and share two opening lines (24) which are symmetrical up and down, the left side of the 1 st rectifying surface unit (2) in each row monopolizes two opening lines (24) which are symmetrical up and down, the left side of the 1 st rectifying surface unit is connected to a direct current output port A1 through a direct current synthesis network (3), the right side of the nth rectifying surface unit (2) in each row monopolizes two opening lines (24) which are symmetrical up and down, the right side of the nth rectifying surface unit (2) in each row is connected to the direct current output port A2 through the direct current synthesis network (3), and the two direct current output ports A1 and A2 are welded together through electric wires to serve as a total direct current output port; each rectifying surface unit (2) comprises 1 energy receiving unit (21), 4 first microstrip lines (221), 2 second microstrip lines (222), 4 Schottky diodes (23), 4 open lines (24) and 4 grounding pads (25); the energy receiving unit (21) is positioned in the center of the rectifying surface unit (2); the 4 first microstrip lines (221) are respectively positioned at the left end and the right end of the energy receiving unit (21), are symmetrical with respect to the energy receiving unit (21) in the left-right direction and the up-down direction, deviate from the horizontal central line of the energy receiving unit (21) in the vertical direction, and are connected with the energy receiving unit (21) at one end and connected with the anode of the Schottky diode (23) at the other end; the 4 Schottky diodes (23) are symmetrical left and right and up and down relative to the center of the energy receiving unit (21), the anode end is connected with one end of the first microstrip line (221) far away from the energy receiving unit (21), and the cathode is connected with the grounding pad (25); the 4 grounding pads (25) are rectangular and are transversely arranged and are symmetrical left and right, up and down relative to the energy receiving unit (21), each grounding pad (25) comprises 4 grounding through holes (251) with the same size and shape, and the grounding through holes (251) are arranged equidistantly and transversely; the 2 second microstrip lines (222) are positioned on the left side and the right side of the energy receiving unit (21), are symmetrical left and right relative to the energy receiving unit (21), one end of each second microstrip line is connected with the central position of the vertical edge of the energy receiving unit (21), and the other end of each second microstrip line is connected with the open line (24); the 4 open lines (24) are rectangular, are identical in size and shape, are longitudinally arranged integrally, are bilaterally symmetrical and are vertically symmetrical with respect to the energy receiving unit (21), the 2 open lines (24) are positioned on the leftmost side of the rectifying surface unit (2), the other 2 open lines are positioned on the rightmost side, and the upper and lower 2 open lines (24) are connected to the second microstrip line (222).
CN202211403937.4A 2022-11-10 2022-11-10 High-efficiency rectification surface of high-integration-level multi-diode structure Pending CN115987110A (en)

Priority Applications (1)

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CN202211403937.4A CN115987110A (en) 2022-11-10 2022-11-10 High-efficiency rectification surface of high-integration-level multi-diode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211403937.4A CN115987110A (en) 2022-11-10 2022-11-10 High-efficiency rectification surface of high-integration-level multi-diode structure

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CN115987110A true CN115987110A (en) 2023-04-18

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