CN115985851A - Pressure sensor and manufacturing method thereof - Google Patents
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Abstract
The invention provides a manufacturing method of a pressure sensor and the pressure sensor, wherein the manufacturing method of the pressure sensor comprises the following steps: providing a top silicon wafer, and forming a first masking layer on the top silicon wafer; providing a bottom silicon wafer, and forming a cavity on the bottom silicon wafer; bonding the top silicon wafer and the bottom silicon wafer; thinning and polishing the top silicon wafer to form a pressure sensing film of the pressure sensor; manufacturing a second masking layer on the pressure-sensitive film, and carrying out photoetching and patterning to form a pattern layer; forming a plurality of P-type lightly doped regions at positions corresponding to the pattern layer in an ion implantation or diffusion mode; forming a P-type heavily doped region at the position of part of the P-type lightly doped region; forming an N-type heavily doped region in an ion implantation or diffusion mode; and manufacturing electrodes connected with the N-type heavily doped region and the P-type heavily doped region. The manufacturing method of the pressure sensor has the advantages of high integration level, high sensitivity, miniaturization, high universality, capability of detecting the temperature of the sensor and real-time temperature calibration.
Description
The priority is required:
the present application claims priority of chinese patent office, application number 202211013110.2, entitled "method for manufacturing pressure sensor, pressure sensor and electronic device" filed on 23/08/2022, and chinese patent application, application number 202211013139.0, entitled "integrated device, electronic device and method for manufacturing integrated device", filed on 23/08/2022, which are filed on 23/2022, and the entire contents of which are incorporated herein by reference.
Technical Field
The invention relates to the technical field of pressure sensors, in particular to a manufacturing method of a pressure sensor and the pressure sensor.
Background
Testing multiple environmental characteristics in a single device is one of the current sensor developments. The multi-sensor combination scheme on the market at present is realized based on packaging, namely, the combination of the functions of the multi-sensor is realized through packaging, and the scheme has the advantages of high cost, lower performance, large size and complex packaging scheme, and does not meet the more severe development requirements of the integrated circuit at present.
According to the traditional scheme based on the pressure sensor, a pressure chip and a temperature chip are integrated together through packaging, the scheme is large in whole packaging size and high in cost, and the acquired temperature has certain deviation; another solution is to integrate a temperature sensor on a pressure signal processing chip (ASIC chip), which, although optimized in terms of package size and cost, is still not the true temperature at which the pressure chip is operating. The method aims at the temperature drift characteristic of the pressure sensor and the application scene that the real-time temperature compensation needs to be carried out on the pressure sensor, and therefore the accurate acquisition of the working temperature of the differential pressure sensor is very necessary.
The existing preparation scheme is to develop a new process on the basis of a pressure sensor process, and integrate a standard BJT CMOS process on a sensor chip, but the pressure sensor manufactured by the process has higher manufacturing cost: and the adoption of the superposition scheme needs new process development and cross-platform process matching in a factory, so that the preparation process is complicated and the manufacturing cost is increased.
In view of the above, there is a need for a new method for manufacturing a pressure sensor and a pressure sensor, which solve or at least alleviate the above technical drawbacks.
Disclosure of Invention
The invention mainly aims to provide a pressure sensor and a manufacturing method thereof, and aims to solve the technical problems of high manufacturing cost and complex manufacturing process of the pressure sensor in the prior art.
To achieve the above object, according to one aspect of the present invention, there is provided a method for manufacturing a pressure sensor, the method comprising the steps of:
providing a top silicon wafer, and forming a first masking layer on the top silicon wafer;
providing a bottom silicon wafer, and forming a cavity on the bottom silicon wafer; bonding the top silicon wafer and the bottom silicon wafer;
thinning and polishing the top silicon wafer to form a pressure sensing film of the pressure sensor; manufacturing a second masking layer on the pressure-sensitive film, and carrying out photoetching and patterning to form a pattern layer;
forming a plurality of P-type lightly doped regions at positions corresponding to the pattern layer in an ion implantation or diffusion mode;
forming a P-type heavily doped region at the position of part of the P-type lightly doped region;
forming an N-type heavily doped region in an ion implantation or diffusion mode;
and manufacturing electrodes connected with the N-type heavily doped region and the P-type heavily doped region.
In one embodiment, the step of forming a plurality of P-type lightly doped regions at the pattern layer region includes:
and a left P-type lightly doped region, a middle P-type lightly doped region and a right P-type lightly doped region are formed at positions corresponding to the graphic layer, the left P-type lightly doped region is a pressure sensor P-type lightly doped region, and the right P-type lightly doped region is a temperature sensor P-type lightly doped region.
The step of forming the P-type heavily doped region at the position of part of the P-type lightly doped region comprises the following steps:
and forming the P-type heavily doped regions in the left P-type lightly doped region and the right P-type lightly doped region respectively in an ion implantation or diffusion mode.
In an embodiment, after the step of forming the first masking layer on the top silicon wafer, the method further includes the steps of:
forming a P-type lightly doped sub-region on the top silicon wafer in an ion implantation or diffusion mode;
the step of forming a left P-type lightly doped region, a middle P-type lightly doped region and a right P-type lightly doped region at the position corresponding to the graphic layer further comprises:
the middle P-type lightly doped region is connected with the P-type lightly doped sub-region to form an electrical isolation region separating the pressure sensor and the temperature sensor.
In an embodiment, the step of forming the N-type heavily doped region by ion implantation or diffusion includes:
and respectively forming the N-type heavily doped regions on the right P-type lightly doped region, two sides of the right P-type lightly doped region and the outside of the left P-type lightly doped region in an ion implantation or diffusion mode.
In one embodiment, the step of forming isolation regions on the top silicon wafer further comprises:
and forming an isolation region and an N + layer on the top silicon wafer, wherein the N + layer is arranged opposite to the right P-type lightly doped region.
In an embodiment, the step of forming the N-type heavily doped region by ion implantation or diffusion includes:
and forming the N-type heavily doped region in the right P-type lightly doped region in an ion implantation or diffusion mode.
In one embodiment, the step of connecting the fabrication electrode with the N-type heavily doped region and the P-type heavily doped region includes:
forming contact holes in the corresponding positions of the N-type heavily doped region and the P-type heavily doped region respectively;
respectively manufacturing a metal connecting wire and a bonding pad at the contact hole position;
and growing a protective layer, and etching the protective layer corresponding to the position of the bonding pad to expose the bonding pad.
In one embodiment, the step of performing the photolithography patterning to form the pattern layer includes:
and forming a photoresist layer on the second masking layer, and forming the pattern layer on the photoresist layer through yellow light photoetching.
In an embodiment, the step of forming a P-type heavily doped region at a part of the P-type lightly doped region includes:
and injecting P-type heavily doped ions into the position of part of the P-type lightly doped region to form the P-type heavily doped region, wherein the P-type heavily doped ions are at least one of boron ions, gallium ions or indium ions.
In an embodiment, the step of forming the N-type heavily doped region by ion implantation or diffusion includes:
and forming the N-type heavily doped region by injecting N-type heavily doped ions, wherein the N-type heavily doped ions are at least one of boron ions, gallium ions or indium ions.
According to another aspect of the present invention, the present invention further provides a pressure sensor, which includes a substrate, a cavity formed in the substrate, and a pressure sensing module and a temperature sensing module respectively disposed on the substrate.
In an embodiment, the pressure sensor further includes an electrical isolation region disposed between the temperature sensing module and the pressure sensing module, and the electrical isolation region is configured to electrically isolate the temperature sensing module from the pressure sensing module.
In an embodiment, the substrate includes a top silicon wafer and a bottom silicon wafer which are spliced with each other, the cavity is formed on the bottom silicon wafer, the pressure sensor further includes a first masking layer and a second masking layer which are respectively arranged on the upper side and the lower side of the top silicon wafer, one end of the electrical isolation region is connected with the first masking layer, and the other end of the electrical isolation region is connected with the second masking layer.
In one embodiment, the pressure sensing module comprises two left P-type lightly doped regions, P-type heavily doped regions respectively arranged in the two left P-type lightly doped regions, and an N-type heavily doped region arranged on one side of the left P-type lightly doped region, wherein the P-type heavily doped region and the N-type heavily doped region are respectively connected with electrodes; the temperature sensing module is a triode and comprises an N-type heavily doped region, a right P-type lightly doped region and a P-type heavily doped region arranged in the right P-type lightly doped region, and the P-type heavily doped region and the N-type heavily doped region are respectively connected with electrodes.
In an embodiment, the pressure sensor further includes an N + layer disposed on the first masking layer and facing the right P-type lightly doped region.
In one embodiment, the pressure sensing module comprises two left P-type lightly doped regions and P-type heavily doped regions respectively arranged in the two left P-type lightly doped regions, and the P-type heavily doped regions are connected with electrodes; the temperature sensing module is a diode and comprises a right P-type lightly doped region, a P-type heavily doped region and an N-type heavily doped region, wherein the P-type heavily doped region and the N-type heavily doped region are respectively arranged in the right P-type lightly doped region and are respectively connected with electrodes.
In the above scheme, the manufacturing method of the pressure sensor comprises the following steps: providing a top silicon wafer, and forming a first masking layer on the top silicon wafer; providing a bottom silicon wafer, and forming a cavity on the bottom silicon wafer; bonding the top silicon wafer and the bottom silicon wafer; thinning and polishing the top silicon wafer to form a pressure sensing film of the pressure sensor; manufacturing a second masking layer on the pressure-sensitive film, and carrying out photoetching and patterning to form a pattern layer; forming a plurality of P-type lightly doped regions at positions corresponding to the pattern layer by means of ion implantation or diffusion; forming a P-type heavily doped region at the position of part of the P-type lightly doped region; forming an N-type heavily doped region in an ion implantation or diffusion mode; and manufacturing electrodes connected with the N-type heavily doped region and the P-type heavily doped region. In the above embodiments of the present invention, the P-type lightly doped region, the P-type heavily doped region, and the N-type heavily doped region are respectively formed on the silicon wafer by ion implantation or diffusion, and specifically, ions are implanted into the top silicon wafer through the masking layer during implantation. The pressure sensor manufactured by the method has a temperature detection function and can perform temperature compensation on the pressure sensor. The temperature sensor can be prepared on a standard pressure sensor process platform, and the temperature sensor manufacturing process can be integrated into the pressure sensor manufacturing process by the mode, so that the temperature sensor can be prepared on the pressure sensor process platform, the process compatibility is realized, and the advantages of simple manufacturing process and low manufacturing cost are achieved; compared with the common semiconductor resistor, the high-sensitivity resistor has higher sensitivity. The invention provides a method for manufacturing a pressure sensor, which has the advantages of high integration level, high sensitivity, miniaturization, high universality, capability of detecting the temperature of the sensor and real-time temperature calibration.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic flow chart illustrating a method for fabricating a pressure sensor according to a first embodiment of the present invention;
FIG. 2 is a schematic flow chart illustrating a method for fabricating a pressure sensor according to a second embodiment of the present invention;
FIG. 3 is a schematic flow chart illustrating a method for manufacturing a pressure sensor according to a third embodiment of the present invention;
FIG. 4 is a schematic flow chart illustrating a method for manufacturing a pressure sensor according to a fourth embodiment of the present invention;
fig. 5 to 8 are structural change diagrams in the manufacturing process of the pressure sensor when the temperature sensing module is a triode;
FIG. 9 is a schematic structural diagram of a pressure sensor with a temperature sensing module being a transistor;
fig. 10 to 13 are structural change diagrams in the manufacturing process of the pressure sensor when the temperature sensing module is a diode;
fig. 14 is a schematic structural diagram of the pressure sensor when the temperature sensing module is a diode.
The reference numbers indicate:
1. a top silicon wafer; 2. a first masking layer; 3. a P-type lightly doped sub-region; 4. a bottom silicon wafer; 5. a cavity; 7. a left P-type lightly doped region; 8. a second masking layer; 9. a right P-type lightly doped region; 10. a P-type heavily doped region; 11. an N-type heavily doped region; 12. an electrical isolation region; 13. an N + layer; 14. a contact hole; 15. a pad; 16. a protective layer; 20. a pressure sensing module; 21. and a temperature sensing module.
The implementation, functional features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It should be noted that all directional indicators (such as upper and lower 8230; etc.) in the embodiments of the present invention are only used for explaining the relative positional relationship between the components at a certain posture (as shown in the attached drawings), the motion situation, etc., and if the certain posture is changed, the directional indicator is also changed accordingly.
In addition, descriptions such as "first", "second", etc. in the present invention are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.
Moreover, the technical solutions in the embodiments of the present invention may be combined with each other, but it is necessary to be able to be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent, and is not within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for manufacturing a pressure sensor according to a first embodiment of the present invention; meanwhile, referring to fig. 5 to 13, fig. 5 to 8 are structural change diagrams in a manufacturing process of the pressure sensor when the temperature sensing module is a triode; fig. 10 to 13 are structural change diagrams in the manufacturing process of the pressure sensor when the temperature sensing module is a diode; fig. 5-13 show the change of each component in the manufacturing process of the pressure sensor and the actual process flow in the form of structural change.
The invention provides a manufacturing method of a pressure sensor, which comprises the following steps:
s10, providing a top silicon wafer 1, and forming a first masking layer 2 on the top silicon wafer 1;
the top silicon wafer 1 can be an N-type silicon wafer, and can be an SOI wafer specifically; a first masking layer 2, which may also be referred to as a buffer layer or a mask layer, is deposited on the top silicon wafer 1, and the material to be formed may be an oxide layer, a nitride layer, or a combination of oxide and nitride layers.
S30, providing a bottom silicon wafer 4, and forming a cavity 5 on the bottom silicon wafer 4; bonding the top silicon wafer 1 and the bottom silicon wafer 4;
forming a Cavity 5 on the bottom silicon wafer 4 by methods such as wet etching and the like to serve as a Cavity 5 structure of the pressure sensor, then inversely buckling the top silicon wafer 1 on the bottom silicon wafer 4, and bonding the top silicon wafer 1 and the bottom silicon wafer 4 under the action of high temperature and high pressure;
s40, thinning and polishing the top silicon wafer 1 to form a pressure sensing film of the pressure sensor; manufacturing a second masking layer 8 on the pressure-sensitive film, and carrying out photoetching and patterning to form a pattern layer;
after the top silicon wafer 1 and the bottom silicon wafer 4 are bonded, the thickness above the top silicon wafer 1 is large, and subsequent processing is not facilitated, so that the top silicon wafer 1 is thinned in a thinning and polishing mode, the thinned top silicon wafer 1 forms a pressure-sensitive film, a second masking layer 8 is deposited and manufactured on the pressure-sensitive film, and photoetching patterning is carried out in parallel to facilitate subsequent ion implantation or diffusion.
S50, forming a plurality of P-type lightly doped regions at positions corresponding to the pattern layer in an ion implantation or diffusion mode;
implanting ions into different positions of the top silicon wafer 1 to form a plurality of P-type lightly doped regions;
s60, forming a P-type heavily doped region 10 at the position of part of the P-type lightly doped region;
injecting P-type heavily doped ions into the P-type lightly doped region to form a P-type heavily doped region 10;
s70, forming an N-type heavily doped region 11 in an ion implantation or diffusion mode;
injecting N-type heavily doped ions into the preset position to form an N-type heavily doped region 11;
and S80, manufacturing electrodes to be connected with the N-type heavily doped region 11 and the P-type heavily doped region 10.
The electrodes are respectively connected with the N-type heavily doped region 11 and the P-type heavily doped region 10 so as to transmit signals.
The pressure sensor manufactured according to the present invention is a pressure sensor with a temperature detection function. In the above embodiment of the present invention, the P-type lightly doped region, the P-type heavily doped region 10 and the N-type heavily doped region 11 are respectively formed on the silicon wafer by ion implantation or diffusion, and specifically, ions are implanted onto the top silicon wafer 1 through the masking layer during implantation. The pressure sensor manufactured by the method has a temperature detection function and can perform temperature compensation on the pressure sensor. The temperature sensor can be prepared on the standard pressure sensor process platform, and the temperature sensor manufacturing process can be integrated into the pressure sensor manufacturing process by the mode, so that the temperature sensor can be prepared on the pressure sensor process platform, the process compatibility is realized, and the method has the advantages of simple manufacturing process and low manufacturing cost; and has higher sensitivity compared with the common semiconductor resistor. The embodiment provides a manufacturing method of the pressure sensor, which has the advantages of high integration level, high sensitivity, miniaturization, high universality, capability of detecting the temperature of the sensor and real-time temperature calibration.
Referring to fig. 2, fig. 2 is a schematic flow chart illustrating a method for manufacturing a pressure sensor according to a second embodiment of the present invention; the step of S50 includes:
and S501, forming a left P-type lightly doped region 7, a middle P-type lightly doped region and a right P-type lightly doped region 9 at positions corresponding to the graphic layer, wherein the left P-type lightly doped region 7 is a pressure sensor P-type lightly doped region, and the right P-type lightly doped region 9 is a temperature sensor P-type lightly doped region.
The step of S60 includes:
s601, forming a P-type heavily doped region 10 in the left P-type lightly doped region 7 and the right P-type lightly doped region 9 by ion implantation or diffusion.
A left P-type lightly doped region 7 and a right P-type lightly doped region 9 are formed in the position of the graph layer respectively, and a P-type heavily doped region 10 is formed in the left P-type lightly doped region 7 and the right P-type lightly doped region 9 respectively in an ion implantation or diffusion mode.
Referring to fig. 3, fig. 3 is a schematic flow chart of a method for manufacturing a pressure sensor according to a third embodiment of the present invention; after the step of S10, further comprising the steps of:
s20, forming a P-type lightly doped sub-region 3 on the top silicon wafer 1 in an ion implantation or diffusion mode;
forming a P-type lightly doped sub-region 3 below the masking layer as a part of a subsequent electrical isolation layer 12 by ion implantation or diffusion and other processes after yellow light photoetching patterning;
the steps of forming the left P-type lightly doped region 7, the middle P-type lightly doped region and the right P-type lightly doped region 9 at the positions corresponding to the graphic layer further comprise:
the intermediate P-type lightly doped region is connected to the P-type lightly doped sub-region 3 to form an electrically isolated region 12 separating the pressure sensor (pressure sensing module 20) and the temperature sensor (temperature sensing module 21).
The electric isolation region 12 is manufactured in two steps respectively, in the first step S20, ions are implanted into the top silicon wafer 1 to form a P-type lightly doped sub-region 3, and after the top silicon wafer 1 is bonded with the bottom silicon wafer 4, the P-type lightly doped sub-region 3 is located above the bottom silicon wafer 4 or at the bottom of the top silicon wafer 1 after the top silicon wafer 1 is reversely buckled on the bottom silicon wafer 4; after the top silicon wafer 1 is thinned, an intermediate P-type lightly doped region is formed by ion implantation from the top of the top silicon wafer 1, the intermediate P-type lightly doped region corresponds to the P-type lightly doped sub-region 3, and the intermediate P-type lightly doped region and the P-type lightly doped sub-region are connected with each other to form an electrical isolation region 12 for isolating the pressure sensor module 20 and the temperature sensor module 21. The structure which can realize deeper doping, also called deep node, can realize the electrical isolation of the pressure sensor and the temperature sensor by the way of twice molding, and can ensure that the two sensors can work simultaneously and do not influence each other.
In an embodiment, when the temperature sensor is a triode, the step of forming the N-type heavily doped region 11 by ion implantation or diffusion includes:
through ion implantation or diffusion, an N-type heavily doped region 11 is respectively formed on the right P-type lightly doped region 9, two sides of the right P-type lightly doped region 9, and outside the left P-type lightly doped region 7.
In one embodiment, the step of forming isolation regions on the top silicon wafer 1 further comprises:
an isolation region and an N + layer 13 are formed on the top silicon wafer 1, the N + layer 13 being disposed facing the right P-type lightly doped region 9. An N + layer 13 is formed on the lower side of the top silicon chip 1, so that the partial resistance of a Collector of the BJT temperature sensor can be effectively reduced.
In an embodiment, when the temperature sensor is a triode, the step of forming the N-type heavily doped region 11 by ion implantation or diffusion includes:
and forming an N-type heavily doped region 11 in the right P-type lightly doped region 9 by means of ion implantation or diffusion.
Referring to fig. 4, fig. 4 is a schematic flow chart illustrating a method for manufacturing a pressure sensor according to a fourth embodiment of the present invention; the steps of making the electrode to connect with the N-type heavily doped region 11 and the P-type heavily doped region 10 include:
s801, forming contact holes 14 in corresponding positions of the N-type heavily doped region 11 and the P-type heavily doped region 10 respectively;
a contact hole 14 region may be formed on second masking layer 8 by etching;
s802, respectively manufacturing a metal connecting line and a bonding pad 15 at the position of the contact hole 14;
manufacturing a metal layer in the contact hole 14 area to form a metal connecting line and a bonding pad 15 structure, wherein the metal layer can be made of copper, aluminum or other metals;
and S803, growing the protective layer 16, and etching away the protective layer 16 corresponding to the position of the pad 15 to expose the pad 15.
And growing a protective layer 16 on the surface layer, wherein the protective layer 16 can be made of silicon nitride, etching the protective layer 16 at the position corresponding to the bonding pad 15, leaking the surface of the bonding pad 15, and forming an electrode after the bonding pad 15 is manufactured.
In one embodiment, the step of performing the photolithography patterning to form the pattern layer comprises:
a photoresist layer is formed on the second masking layer 8, and a pattern layer is formed on the photoresist layer by photolithography with yellow light.
The yellow light photoetching is a process of coating glue, soft baking, exposure, developing and hard baking on wafers such as silicon wafers to ensure that the wafers are photoetched to form a certain pattern, and is particularly widely applied in the semiconductor industry. After the pressure sensor is fabricated, the photoresist layer may be removed by heating or other means.
In one embodiment, the step of forming the heavily P-doped region 10 at a portion of the lightly P-doped region includes:
and injecting P-type heavily doped ions into the part of the P-type lightly doped region to form a P-type heavily doped region 10, wherein the P-type heavily doped ions are at least one of boron ions, gallium ions or indium ions.
The step of forming the N-type heavily doped region 11 by ion implantation or diffusion includes:
the N-type heavily doped region 11 is formed by implanting N-type heavily doped ions, which are at least one of boron ions, gallium ions, or indium ions.
The implanted P-type heavily doped ions are at least one of boron ions, gallium ions or indium ions. The ion implantation may be achieved by means of ion bombardment of the surface of the substrate 1. Of course, the ions implanted to form the P-type lightly doped layer may be at least one of boron ions, gallium ions, or indium ions, but the amount of the implanted ions is different. The N-type heavily doped ions are at least one of nitrogen ions, phosphorus ions or arsenic ions.
Referring to fig. 9 and 14, according to another aspect of the present invention, the present invention also provides a pressure sensor including a substrate having a cavity 5 formed therein, on which a pressure sensing block 20 and a temperature sensing block 21 are respectively disposed. The pressure sensor has the functions of temperature detection and pressure detection, namely the functions of the pressure sensor and the temperature sensor, so that the temperature compensation of the pressure sensor can be realized, the manufacturing process of the diode or triode temperature sensor can be integrated into the manufacturing process of the pressure sensor, the temperature sensor is manufactured on a pressure sensor process platform, the diode or triode structure is realized, the process compatibility is realized, and the pressure sensor has the advantages of simple manufacturing process and low manufacturing cost; and has higher sensitivity compared with the common semiconductor resistor.
In one embodiment, the pressure sensor further comprises an electrically isolated region 12, the electrically isolated region 12 being disposed between the temperature sensing block 21 and the pressure sensing block 20, the electrically isolated region 12 being configured to electrically isolate the temperature sensing block 21 from the pressure sensing block 20. The pressure sensor is provided with an electrical isolation region 12, which can realize electrical isolation of the pressure sensor and the temperature sensor, can ensure that the two sensors can work simultaneously and do not affect each other, and improve the detection sensitivity.
In an embodiment, the substrate includes a top silicon wafer 1 and a bottom silicon wafer 4 which are spliced with each other, a cavity 5 is formed on the bottom silicon wafer 4, the pressure sensor further includes a first masking layer 2 and a second masking layer 8 which are respectively arranged on the upper side and the lower side of the top silicon wafer 1, one end of an electrical isolation region 12 is connected with the first masking layer 2, and the other end of the electrical isolation region 12 is connected with the second masking layer 8. The electric isolation area 12 penetrates through the top silicon wafer 1 to divide the top silicon wafer 1 into the temperature sensing module 21 and the pressure sensing module 20, doping ions are injected into the upper side and the lower side of the top silicon wafer 1 in a two-time injection or diffusion mode, a deeper doping structure, namely a deep junction, can be realized in a two-time forming mode, the electric isolation layer penetrating through the top silicon wafer 1 is realized, and the electric isolation effect is good. Of course, a protective layer 16 is also provided on the second masking layer 8.
Referring to fig. 9, in an embodiment, the temperature sensing module 21 of the pressure sensor may be a triode, and the corresponding specific structure is: the pressure sensing module 20 comprises two left P-type lightly doped regions 7, P-type heavily doped regions 10 respectively arranged in the two left P-type lightly doped regions 7, and an N-type heavily doped region 11 arranged on one side of the left P-type lightly doped region 7, wherein the P-type heavily doped region 10 and the N-type heavily doped region 11 are respectively connected with electrodes; the temperature sensing module 21 is a triode, the temperature sensing module 21 comprises an N-type heavily doped region 11, a right P-type lightly doped region 9 and a P-type heavily doped region 10 arranged in the right P-type lightly doped region 9, and the P-type heavily doped region 10 and the N-type heavily doped region 11 are respectively connected with electrodes.
In one embodiment, the pressure sensor further includes an N + layer 13, the N + layer 13 is disposed on the first masking layer 2 and is disposed opposite to the right P-type lightly doped region 9. An N + layer 13 is formed on the lower side of the top silicon chip 1, so that the partial resistance of the Collector of the BJT temperature sensor can be effectively reduced.
Referring to fig. 14, in an embodiment, the temperature sensing module 21 of the pressure sensor may be a diode, and the corresponding specific structure is: the pressure sensing module 20 comprises two left P-type lightly doped regions 7 and P-type heavily doped regions 10 respectively arranged in the two left P-type lightly doped regions 7, and the P-type heavily doped regions 10 are connected with electrodes; the temperature sensing module 21 is a diode, the temperature sensing module 21 comprises a right P-type lightly doped region 9, and a P-type heavily doped region 10 and an N-type heavily doped region 11 which are respectively arranged in the right P-type lightly doped region 9, and the P-type heavily doped region 10 and the N-type heavily doped region 11 are respectively connected with electrodes.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents made by the claims and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (16)
1. A manufacturing method of a pressure sensor is characterized by comprising the following steps:
providing a top silicon wafer, and forming a first masking layer on the top silicon wafer;
providing a bottom silicon wafer, and forming a cavity on the bottom silicon wafer; bonding the top silicon wafer and the bottom silicon wafer;
thinning and polishing the top silicon wafer to form a pressure sensing film of the pressure sensor; manufacturing a second masking layer on the pressure-sensitive film, and carrying out photoetching and patterning to form a pattern layer;
forming a plurality of P-type lightly doped regions at positions corresponding to the graphic layer in an ion implantation or diffusion mode;
forming a P-type heavily doped region at the position of part of the P-type lightly doped region;
forming an N-type heavily doped region in an ion implantation or diffusion mode;
and manufacturing electrodes which are respectively connected with the N-type heavily doped region and the P-type heavily doped region.
2. The method of claim 1, wherein the step of forming a plurality of P-type lightly doped regions at the pattern layer region comprises:
a left P-type lightly doped region, a middle P-type lightly doped region and a right P-type lightly doped region are formed in the positions corresponding to the graphic layer, the left P-type lightly doped region is a pressure sensor P-type lightly doped region, and the right P-type lightly doped region is a temperature sensor P-type lightly doped region;
the step of forming the P-type heavily doped region at the position of part of the P-type lightly doped region comprises the following steps:
and forming the P-type heavily doped regions in the left P-type lightly doped region and the right P-type lightly doped region respectively in an ion implantation or diffusion mode.
3. The method of claim 2, wherein after the step of forming the first masking layer on the top silicon wafer, further comprising the steps of:
forming a P-type lightly doped sub-region on the top silicon wafer in an ion implantation or diffusion mode;
the step of forming a left P-type lightly doped region, a middle P-type lightly doped region and a right P-type lightly doped region at the position corresponding to the graphic layer further comprises:
the middle P-type lightly doped region is connected with the P-type lightly doped sub-region to form an electrical isolation region separating the pressure sensor and the temperature sensor.
4. The method for manufacturing a pressure sensor according to claim 1, wherein the step of forming the heavily N-doped region by ion implantation or diffusion comprises:
and respectively forming the N-type heavily doped regions on the right P-type lightly doped region, two sides of the right P-type lightly doped region and the outside of the left P-type lightly doped region in an ion implantation or diffusion mode.
5. The method of claim 4, wherein the step of forming isolation regions on the top silicon wafer further comprises:
and forming an isolation region and an N + layer on the top silicon wafer, wherein the N + layer and the right P-type lightly doped region are arranged in a facing manner.
6. The method for manufacturing a pressure sensor according to claim 1, wherein the step of forming the heavily N-doped region by ion implantation or diffusion comprises:
and forming the N-type heavily doped region in the right P-type lightly doped region in an ion implantation or diffusion mode.
7. The method of claim 1, wherein the step of forming the electrodes to connect the heavily N-doped region and the heavily P-doped region comprises:
forming contact holes in the corresponding positions of the N-type heavily doped region and the P-type heavily doped region respectively;
respectively manufacturing a metal connecting wire and a bonding pad at the contact hole;
and growing a protective layer, and etching the protective layer corresponding to the position of the bonding pad to expose the bonding pad.
8. The method for manufacturing a pressure sensor according to any one of claims 1 to 7, wherein the step of performing the photolithography patterning to form the pattern layer comprises:
and forming a photoresist layer on the second masking layer, and forming the pattern layer on the photoresist layer through yellow light photoetching.
9. The method for manufacturing the pressure sensor according to any one of claims 1 to 7, wherein the step of forming the heavily P-doped region at the position of part of the lightly P-doped region comprises:
and injecting P-type heavily doped ions into the positions of part of the P-type lightly doped region to form the P-type heavily doped region, wherein the P-type heavily doped ions are at least one of boron ions, gallium ions or indium ions.
10. The method for manufacturing a pressure sensor according to any one of claims 1 to 7, wherein the step of forming the N-type heavily doped region by ion implantation or diffusion comprises:
and forming the N-type heavily doped region by implanting N-type heavily doped ions, wherein the N-type heavily doped ions are at least one of boron ions, gallium ions or indium ions.
11. The pressure sensor is characterized by comprising a substrate, wherein a cavity is formed in the substrate, and a pressure sensing module and a temperature sensing module are respectively arranged on the substrate.
12. The pressure sensor of claim 11, further comprising an electrically isolated region disposed between the temperature sensing module and the pressure sensing module, the electrically isolated region configured to electrically isolate the temperature sensing module from the pressure sensing module.
13. The pressure sensor of claim 12, wherein the substrate comprises a top silicon wafer and a bottom silicon wafer joined to each other, the bottom silicon wafer having the cavity formed therein, the pressure sensor further comprising a first masking layer and a second masking layer respectively disposed on upper and lower sides of the top silicon wafer, one end of the electrical isolation region being connected to the first masking layer, and the other end of the electrical isolation region being connected to the second masking layer.
14. The pressure sensor according to any one of claims 11 to 13, wherein the pressure sensing module comprises two left P-type lightly doped regions, P-type heavily doped regions respectively disposed in the two left P-type lightly doped regions, and an N-type heavily doped region disposed at one side of the left P-type lightly doped region, the P-type heavily doped region and the N-type heavily doped region being respectively connected to electrodes; the temperature sensing module is a triode and comprises an N-type heavily doped region, a right P-type lightly doped region and a P-type heavily doped region arranged in the right P-type lightly doped region, and the P-type heavily doped region and the N-type heavily doped region are respectively connected with electrodes.
15. The pressure sensor of claim 14, further comprising an N + layer disposed on the first masking layer and facing the right P-type lightly doped region.
16. The pressure sensor according to any one of claims 11 to 13, wherein the pressure sensing module comprises two left P-type lightly doped regions and P-type heavily doped regions respectively disposed in the two left P-type lightly doped regions, the P-type heavily doped regions being connected to electrodes; the temperature sensing module is a diode and comprises a right P-type lightly doped region, and a P-type heavily doped region and an N-type heavily doped region which are respectively arranged in the right P-type lightly doped region and are respectively connected with electrodes.
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| CN202211013110.2A CN115360088A (en) | 2022-08-23 | 2022-08-23 | Manufacturing method of pressure sensor, pressure sensor and electronic equipment |
| CN2022110131390 | 2022-08-23 | ||
| CN202211013139.0A CN115394776A (en) | 2022-08-23 | 2022-08-23 | Integrated device, electronic equipment and manufacturing method of integrated device |
| CN2022110131102 | 2022-08-23 |
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