CN115968502A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN115968502A
CN115968502A CN202180050368.7A CN202180050368A CN115968502A CN 115968502 A CN115968502 A CN 115968502A CN 202180050368 A CN202180050368 A CN 202180050368A CN 115968502 A CN115968502 A CN 115968502A
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China
Prior art keywords
insulator
oxide
conductor
addition
oxygen
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CN202180050368.7A
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English (en)
Chinese (zh)
Inventor
山崎舜平
伊藤俊一
小松良宽
川口忍
笹川慎也
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN115968502A publication Critical patent/CN115968502A/zh
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
CN202180050368.7A 2020-08-27 2021-08-12 半导体装置的制造方法 Pending CN115968502A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020143897 2020-08-27
JP2020-143897 2020-08-27
PCT/IB2021/057429 WO2022043811A1 (ja) 2020-08-27 2021-08-12 半導体装置の作製方法

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Publication Number Publication Date
CN115968502A true CN115968502A (zh) 2023-04-14

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CN202180050368.7A Pending CN115968502A (zh) 2020-08-27 2021-08-12 半导体装置的制造方法

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US (1) US20240063028A1 (https=)
JP (2) JP7778703B2 (https=)
KR (1) KR20230056695A (https=)
CN (1) CN115968502A (https=)
WO (1) WO2022043811A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101470811B1 (ko) * 2009-09-16 2014-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
US9461126B2 (en) * 2013-09-13 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit
JP6985812B2 (ja) * 2016-05-04 2021-12-22 株式会社半導体エネルギー研究所 トランジスタの作製方法
US11610997B2 (en) * 2017-11-24 2023-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and semiconductor device having a metal element and nitrogen
JP7344869B2 (ja) * 2018-06-29 2023-09-14 株式会社半導体エネルギー研究所 半導体装置の作製方法

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Publication number Publication date
JP7778703B2 (ja) 2025-12-02
JP2026020276A (ja) 2026-02-06
KR20230056695A (ko) 2023-04-27
JPWO2022043811A1 (https=) 2022-03-03
WO2022043811A1 (ja) 2022-03-03
US20240063028A1 (en) 2024-02-22

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