CN115966619A - Preparation method of zinc telluride nanosheet, photoelectric device and preparation method and application thereof - Google Patents
Preparation method of zinc telluride nanosheet, photoelectric device and preparation method and application thereof Download PDFInfo
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- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 239000002135 nanosheet Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000010445 mica Substances 0.000 claims abstract description 8
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 5
- 239000011737 fluorine Substances 0.000 claims abstract description 5
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 17
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 13
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 230000005693 optoelectronics Effects 0.000 claims description 8
- 239000012159 carrier gas Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 230000004044 response Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- 238000004528 spin coating Methods 0.000 description 15
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000008021 deposition Effects 0.000 description 13
- 239000004205 dimethyl polysiloxane Substances 0.000 description 13
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 13
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 13
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 13
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 13
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 13
- 239000004926 polymethyl methacrylate Substances 0.000 description 13
- 239000002390 adhesive tape Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000000861 blow drying Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000009210 therapy by ultrasound Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a preparation method of a zinc telluride nanosheet, a photoelectric device, a preparation method and application thereof, and belongs to the technical field of semiconductor material photoelectrons. The method comprises the steps of firstly, taking zinc telluride powder and tellurium powder as raw materials, and growing zinc telluride on a fluorine crystal mica sheet by adopting a physical vapor deposition method to obtain the zinc telluride nano sheet. And then sequentially stacking a heterojunction formed by a first graphene layer, a zinc telluride nanosheet and a second graphene layer on the substrate, wherein metal electrodes are arranged at two ends of the graphene, so that the photoelectric device can be obtained. The photoelectric device has the functions of photoelectric detection and fluorescence switching, and has the characteristics of wide response range, high responsivity, high stability and the like when being used as the photoelectric detector; when used as a fluorescence switch, the fluorescence is completely quenched when the bias reaches 8 volts. The photoelectric device has the characteristics of simple structure, high reliability, easiness in manufacturing and the like, and the application of the two-dimensional material in the field of photoelectric integration is expanded.
Description
Technical Field
The invention relates to the technical field of semiconductor material photoelectron, in particular to a preparation method of a zinc telluride nanosheet, a photoelectric device, a preparation method and application thereof.
Background
The two-dimensional heterojunction combines the advantages of different two-dimensional materials, has the thickness of an atomic layer and strong interaction between light and substances, and is easy to be compatible with the existing silicon-based devices. Photoelectric devices based on two-dimensional heterojunction have been widely researched and are expected to replace the existing photoelectric devices to be applied in various aspects. At present, the realization of a photoelectric integrated circuit with high speed, small volume, low power consumption and low cost is still a great challenge, and the design of a multifunctional device which is based on a two-dimensional heterojunction and simultaneously has photoelectric detection and photoelectric modulation is a feasible scheme. Various high-performance photoelectric devices with single functions are continuously updated, but devices with excellent photoelectric detection and efficient electro-optical regulation and control have yet to be realized. Therefore, it is of great significance to develop a photoelectric device with multiple functions of photoelectric detection and fluorescent switch and a preparation method thereof.
Disclosure of Invention
The invention aims to provide a preparation method of a zinc telluride nanosheet, a photoelectric device, a preparation method and application thereof, and aims to solve the technical problem that the photoelectric device with the functions of photoelectric detection and fluorescence switching does not exist in the prior art.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of zinc telluride nanosheets, which comprises the following steps:
zinc telluride powder and tellurium powder are used as raw materials, and zinc telluride is grown on a fluorine crystal mica sheet by adopting a physical vapor deposition method to obtain a zinc telluride nano sheet.
Preferably, the mass ratio of the zinc telluride powder to the tellurium powder is 1:1-2; the carrier gas used in the physical vapor deposition method is hydrogen and argon, wherein the flow of the hydrogen is 10-30 sccm, and the flow of the argon is 60-100 sccm; the reaction temperature in the physical vapor deposition method is 900-1000 ℃, and the reaction time is 20-40 min.
The invention provides a photoelectric device which comprises a heterojunction formed by a first layer of graphene, a zinc telluride nanosheet and a second layer of graphene which are sequentially stacked on a substrate, wherein metal electrodes are arranged at two ends of the first layer of graphene and the second layer of graphene.
Preferably, the substrate is a silicon dioxide/silicon substrate, wherein the thickness of the silicon dioxide is 200-400 nm.
Preferably, the thickness of the zinc telluride nanosheet is 20-80 nm;
preferably, the number of layers of the first layer of graphene and the second layer of graphene is independently 1 to 10.
Preferably, the metal electrode consists of a gold electrode and an electrode adhesion layer, wherein the electrode adhesion layer comprises a titanium electrode adhesion layer, a chromium electrode adhesion layer or a nickel electrode adhesion layer; the thickness of the metal electrode is 40-60 nm, wherein the thickness ratio of the gold electrode to the electrode adhesion layer is 35-50.
The invention provides a preparation method of a photoelectric device, which comprises the following steps:
(1) Preparing a first layer of graphene and a second layer of graphene by using a mechanical stripping method, and then sequentially stacking the first layer of graphene, the zinc telluride nanosheet and the second layer of graphene on a substrate from bottom to top to obtain a heterojunction;
(2) Designing an electrode pattern by adopting electron beam exposure;
(3) And arranging metal electrodes on the first layer of graphene and the second layer of graphene by adopting an electron beam evaporation deposition method to obtain the photoelectric device.
The invention provides an application of a photoelectric device in detecting optical signals in visible-infrared bands.
The invention provides an application of a photoelectric device as a fluorescent switch.
The invention has the beneficial effects that:
(1) The invention adopts a physical vapor deposition method to stably grow the two-dimensional non-layered ZnTe nanosheet, and the nanosheet has good quality.
(2) The photoelectric device has the functions of photoelectric detection and fluorescence switching, and has the characteristics of wide response range, high responsivity, high stability and the like when being used as the photoelectric detector; when used as a fluorescence switch, the fluorescence is completely quenched when the bias reaches 8 volts. The photoelectric device has the characteristics of simple structure, high reliability, easiness in manufacturing and the like, and the application of the two-dimensional material in the field of photoelectric integration is expanded.
Drawings
FIG. 1 is a schematic view of the growth of zinc telluride nanosheets by physical vapor deposition of the present invention, wherein G b Represents the first layer of graphene, G t Represents a second layer of graphene, S, D represents a metal electrode;
FIG. 2 is a schematic representation of a photovoltaic device made according to the present invention;
FIG. 3 is a photo current response diagram of the photoelectric device prepared in example 4 under different wavelength laser irradiation;
FIG. 4 is a graph of the photoresponsiveness R and the detectivity D of the photovoltaic device prepared in example 4 under different wavelengths of laser irradiation;
FIG. 5 is a graph showing the evolution of fluorescence quenching under bias voltage in the photovoltaic device fabricated in example 4;
fig. 6 is a graph showing fluorescence intensity of the photovoltaic device fabricated in example 4 under the control of a periodically varying bias voltage.
Detailed Description
The invention provides a preparation method of zinc telluride nanosheets, which comprises the following steps:
zinc telluride powder and tellurium powder are used as raw materials, and zinc telluride is grown on the fluorine crystal mica sheet by adopting a physical vapor deposition method, so that the zinc telluride nanosheet is obtained.
In the invention, the preparation of the zinc telluride nanosheet is preferably carried out in a horizontal tube furnace, wherein the zinc telluride powder, the tellurium powder and the fluorophlogopite sheet are sequentially arranged in the horizontal tube furnace from near to far from the carrier gas inlet end.
In the invention, the mass ratio of the zinc telluride powder to the tellurium powder is 1:1-2, preferably 1:1; the carrier gas used in the physical vapor deposition method is hydrogen and argon, wherein the flow rate of the hydrogen is 10-30 sccm, preferably 15-25 sccm, and further preferably 20sccm; the flow rate of the argon gas is 60-100 sccm, preferably 70-90 sccm, and more preferably 80sccm; the reaction temperature in the physical vapor deposition method is 900-1000 ℃, preferably 920-980 ℃, and further preferably 950 ℃; the reaction time is 20 to 40min, preferably 25 to 35min, and more preferably 30min.
The invention provides a photoelectric device which comprises a heterojunction formed by a first graphene layer, a zinc telluride nanosheet layer and a second graphene layer which are sequentially stacked on a substrate, wherein metal electrodes are arranged at two ends of the first graphene layer and the second graphene layer.
In the present invention, the substrate is a silicon dioxide/silicon substrate, wherein the thickness of the silicon dioxide is 200 to 400nm, preferably 250 to 350nm, and more preferably 300nm.
In the invention, the thickness of the zinc telluride nanosheet is 20-80 nm, preferably 30-70 nm, and more preferably 40-60 nm;
in the present invention, the number of layers of the first layer of graphene and the second layer of graphene is independently 1 to 10, preferably 3 to 8, and more preferably 5.
In the invention, the metal electrode consists of a gold electrode and an electrode adhesion layer, wherein the electrode adhesion layer comprises a titanium electrode adhesion layer, a chromium electrode adhesion layer or a nickel electrode adhesion layer, preferably the titanium electrode adhesion layer or the chromium electrode adhesion layer, and further preferably the chromium electrode adhesion layer; the thickness of the metal electrode is 40-60 nm, preferably 42-58 nm, and more preferably 45-55 nm; wherein the thickness ratio of the gold electrode to the electrode adhesion layer is 35 to 50, preferably 40 to 45.
The invention provides a preparation method of a photoelectric device, which comprises the following steps:
(1) Preparing a first layer of graphene and a second layer of graphene by using a mechanical stripping method, and then sequentially stacking the first layer of graphene, the zinc telluride nanosheet and the second layer of graphene on a substrate from bottom to top to obtain a heterojunction;
(2) Designing an electrode pattern by adopting electron beam exposure;
(3) And arranging metal electrodes on the first layer of graphene and the second layer of graphene by adopting an electron beam evaporation deposition method to obtain the photoelectric device.
In the present invention, the substrate is preferably pretreated, which comprises the following specific steps: and sequentially carrying out ultrasonic treatment on the substrate in acetone, isopropanol and deionized water for 15min respectively, and blow-drying for later use.
In the invention, the first layer of graphene, the zinc telluride nanosheet and the second layer of graphene are sequentially stacked on the substrate from bottom to top, and the first layer of graphene, the zinc telluride nanosheet and the second layer of graphene adhered to the PDMS are preferably sequentially transferred to a target position of the substrate through a transfer platform.
When the electrode pattern is designed by adopting electron beam exposure, a spin coater is preferably adopted to uniformly spin-coat Methyl Methacrylate (MMA) and polymethyl methacrylate (PMMA) on a silicon dioxide/silicon substrate bearing a heterojunction in sequence, wherein the spin-coating times of the Methyl Methacrylate (MMA) and the polymethyl methacrylate (PMMA) are both twice, the spin-coating speed of the first time is 600-1000 r/min, the spin-coating time is 8-12 s, the spin-coating speed is preferably 800r/min, and the spin-coating time is 10s; the rotation speed of the second spin coating is 3800-4200 r/min, the spin coating time is 40-60 s, preferably 4000r/min, and the spin coating time is 50s. And then, modifying the glue by using an electron beam exposure method, and cleaning and drying the glue by using deionized water after developing by using a developing solution, thereby obtaining the required electrode pattern.
In the present invention, the acceleration voltage during the electron beam exposure is 25 to 35keV, preferably 28 to 32keV, and more preferably 30keV; the beam current is 0.1-0.3 nA, preferably 0.2nA; the charge amount per unit area is 200-300 mu C/cm 2 Preferably 220 to 280. Mu.C/cm 2 More preferably 250. Mu.C/cm 2 .
In the invention, the electron beam evaporation deposition processDegree of vacuum of 2.0X 10 -4 ～2.4×10 -4 Pa, preferably 2.1X 10 -4 ～2.3×10 -4 Pa, more preferably 2.2X 10 -4 Pa; the metal electrode is preferably composed of a gold electrode and a chromium electrode adhesion layer, wherein the evaporation rate of chromium is 0.2-0.4A/s, preferably 0.3A/s; the evaporation rate of gold is 0.4 to 0.6A/s, preferably 0.5A/s.
The invention provides an application of a photoelectric device in detecting optical signals in visible-infrared bands.
The invention provides an application of a photoelectric device as a fluorescent switch.
The technical solutions provided by the present invention are described in detail below with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
Respectively placing 0.5g of zinc telluride powder and 0.5g of tellurium powder in two quartz boats, sequentially placing the tellurium powder, the zinc telluride powder and the fluorophlogopite sheet into a horizontal tube furnace from near to far near an inlet end of a carrier gas according to the position shown in figure 1, sealing the horizontal tube furnace, vacuumizing, introducing argon, repeatedly performing three times, keeping the normal pressure, continuously introducing hydrogen and argon into the horizontal tube furnace, performing physical vapor deposition at the temperature of 950 ℃ for 30min, and naturally cooling to room temperature to obtain the zinc telluride nanosheet.
Example 2
Respectively placing 0.5g of zinc telluride powder and 1g of tellurium powder in two quartz boats, sequentially placing the tellurium powder, the zinc telluride powder and a fluorophlogopite sheet into a horizontal tube furnace from near to far near an inlet end of a carrier gas according to the position shown in figure 1, sealing the horizontal tube furnace, vacuumizing, introducing argon, repeatedly performing for three times, keeping the normal pressure, continuously introducing hydrogen and argon into the horizontal tube furnace, wherein the flow of the hydrogen is 30sccm, the flow of the argon is 60sccm, performing physical vapor deposition at the temperature of 1000 ℃ for 20min, and naturally cooling to room temperature to obtain the zinc telluride sheet.
Example 3
Respectively placing 0.5g of zinc telluride powder and 1g of tellurium powder in two quartz boats, sequentially placing the tellurium powder, the zinc telluride powder and a fluoroplastic mica sheet into a horizontal tube furnace from near to far according to the position shown in figure 1 and near to a carrier gas inlet end, sealing the horizontal tube furnace, vacuumizing, introducing argon, repeatedly performing for three times, keeping the normal pressure, continuously introducing hydrogen and argon into the horizontal tube furnace, wherein the flow of the hydrogen is 10sccm, the flow of the argon is 80sccm, performing physical vapor deposition at the temperature of 900 ℃ for 40min, and naturally cooling to room temperature to obtain the zinc telluride nanosheet.
Example 4
Cutting the silicon dioxide/silicon substrate into the size of 1cm multiplied by 1cm, wherein the thickness of the silicon dioxide of the substrate is 285nm, sequentially carrying out ultrasonic treatment on the substrate in acetone, isopropanol and deionized water for 15min respectively, and blow-drying the substrate by a nitrogen gun for later use. And then, arranging graphite sheets in order on a 3M adhesive tape, folding for many times to obtain few-layer graphene, then attaching the 3M adhesive tape on a cleaned silicon dioxide/silicon substrate, repeatedly rubbing to enable the graphite sheets to be in full contact with the substrate, tearing off the adhesive tape, and stacking a first layer of graphene on the substrate, wherein the first layer of graphene is 4 layers. Then, covering a PDMS film on the zinc telluride nanosheet prepared in the embodiment 1, then separating the PDMS film adhered with the zinc telluride nanosheet from the fluorograined mica sheet, then attaching the other side of the PDMS film not adhered with the zinc telluride nanosheet to a glass slide, completing the positioning of a sample with the help of a transfer platform, transferring the zinc telluride nanosheet to a first layer of graphene at a fixed point, wherein the thickness of the zinc telluride nanosheet is 60nm, then soaking the zinc telluride nanosheet with an organic solvent to remove the residual PDMS film, and finally transferring a second layer of graphene to the zinc telluride nanosheet by using the same method, wherein the second layer of graphene is 3 layers, so as to obtain a heterojunction.
Uniformly spin-coating Methyl Methacrylate (MMA) on a silica/silicon substrate bearing a heterojunction at a rotation speed of 800r/min for 10s by using a spin coater, and heating at a rotation speed of 4000r/min after the spin coatingThe plate was heated for 3 minutes and then spin coated with polymethyl methacrylate (PMMA) in the same manner. Finally, an electron beam exposure is adopted to design an electrode pattern, wherein the acceleration voltage is 30keV, the beam current is 0.2nA, and the unit area charge quantity is 250 mu C/cm 2 And putting the exposed sample into a developing solution for 20s, and cleaning and drying the sample by using deionized water after the development is finished.
Finally, depositing a chromium electrode adhesion layer 5nm at two ends of the first layer of graphene and the second layer of graphene by an electron beam evaporation deposition method, and then depositing a gold electrode 45nm to form a metal electrode with the thickness of 50nm, wherein the vacuum degree is 2.2 multiplied by 10 when the electron beam evaporation deposition is carried out -4 Pa, the deposition rate of the chromium electrode adhesion layer is 0.3A/s, the deposition rate of the gold electrode is 0.5A/s, and after deposition is finished, PMMA is soaked in acetone, and the gold film except the electrode pattern is removed, so that the photoelectric device can be obtained.
The photovoltaic device prepared in example 4 was tested for performance. FIG. 3 is a photo-current response curve of the photoelectric device manufactured in example 4 under irradiation of laser light of different wavelengths when used as a photodetector, FIG. 4 is a graph of the responsivity R and the detectivity D of the photoelectric device manufactured in example 4 under irradiation of laser light of different wavelengths, where R and D have maximum values of 2A/W and 3X 10, respectively, when the wavelength is 532nm 10 Jones shows that the method has the characteristics of wide response range, high responsiveness, high stability and the like. FIG. 5 is a fluorescence scan under different bias voltages when the optoelectronic device prepared in example 4 is used as a fluorescence switch, wherein the fluorescence is completely quenched when the voltage is increased, the fluorescence in the central region is changed from strong to weak, and the bias voltage reaches 8V. Fig. 6 is a graph of the on and off of the bias voltage with the fluorescent intensity varying with period, showing that a fast and stable fluorescent switching function can be achieved under the bias control.
Example 5
Cutting the silicon dioxide/silicon substrate into the size of 1cm multiplied by 1cm, wherein the thickness of the silicon dioxide of the substrate is 200nm, sequentially carrying out ultrasonic treatment on the substrate in acetone, isopropanol and deionized water for 15min respectively, and blow-drying the substrate by a nitrogen gun for later use. And then, arranging graphite sheets in order on a 3M adhesive tape, folding for many times to obtain few-layer graphene, then attaching the 3M adhesive tape on a cleaned silicon dioxide/silicon substrate, repeatedly rubbing to enable the graphite sheets to be in full contact with the substrate, tearing off the adhesive tape, and stacking a first layer of graphene on the substrate, wherein the first layer of graphene is 2 layers. Then, covering a PDMS film on the zinc telluride nanosheet prepared in the embodiment 1, then separating the PDMS film adhered with the zinc telluride nanosheet from the fluorograined mica sheet, then attaching the other side of the PDMS film not adhered with the zinc telluride nanosheet to a glass slide, completing the positioning of a sample with the help of a transfer platform, transferring the zinc telluride nanosheet to a first layer of graphene at a fixed point, wherein the thickness of the zinc telluride nanosheet is 20nm, then soaking the zinc telluride nanosheet with an organic solvent to remove the residual PDMS film, and finally transferring a second layer of graphene to the zinc telluride nanosheet by adopting the same method, wherein the second layer of graphene is 1 layer, so as to obtain a heterojunction.
Uniformly spin-coating Methyl Methacrylate (MMA) on a silicon dioxide/silicon substrate bearing a heterojunction at a rotation speed of 800r/min for 10s by using a spin coater, heating the Methyl Methacrylate (MMA) on a heating table for 3 minutes after the spin coating is finished, and then spin-coating polymethyl methacrylate (PMMA) by the same method. Finally, an electron beam exposure is adopted to design an electrode pattern, wherein the acceleration voltage is 30keV, the beam current is 0.2nA, and the unit area charge quantity is 250 mu C/cm 2 And putting the exposed sample into a developing solution for 20s, and cleaning and drying the sample by using deionized water after the development is finished.
Finally, depositing a chromium electrode adhesion layer at two ends of the first layer of graphene and the second layer of graphene by an electron beam evaporation deposition method for 8nm, and then depositing a gold electrode for 35nm to form a metal electrode with the thickness of 43nm, wherein the vacuum degree is 2.4 multiplied by 10 when the electron beam evaporation deposition is carried out -4 Pa, the deposition rate of the chromium electrode adhesion layer is 0.2A/s, the deposition rate of the gold electrode is 0.6A/s, and after deposition is finished, PMMA is soaked in acetone, and the gold film except the electrode pattern is removed, so that the photoelectric device can be obtained.
Example 6
Cutting the silicon dioxide/silicon substrate into the size of 1cm multiplied by 1cm, wherein the thickness of the silicon dioxide of the substrate is 400nm, sequentially carrying out ultrasonic treatment on the substrate in acetone, isopropanol and deionized water for 15min respectively, and blow-drying the substrate by a nitrogen gun for later use. And then, arranging graphite sheets in order on a 3M adhesive tape, folding for many times to obtain few-layer graphene, then attaching the 3M adhesive tape on a cleaned silicon dioxide/silicon substrate, repeatedly rubbing to enable the graphite sheets to be in full contact with the substrate, tearing off the adhesive tape, and stacking a first layer of graphene on the substrate, wherein the first layer of graphene is 8 layers. Then, covering a PDMS film on the zinc telluride nanosheet prepared in the embodiment 1, then separating the PDMS film adhered with the zinc telluride nanosheet from the fluorine crystal mica plate, then pasting the other side of the PDMS film not adhered with the zinc telluride nanosheet on a glass slide, completing the positioning of a sample with the help of a transfer platform, transferring the zinc telluride nanosheet to a first layer of graphene at a fixed point, wherein the thickness of the zinc telluride nanosheet is 80nm, then soaking the glass slide with an organic solvent to remove the residual PDMS film, and finally transferring a second layer of graphene to the zinc telluride nanosheet by adopting the same method, wherein the second layer of graphene is 6 layers, so that a heterojunction can be obtained.
Uniformly spin-coating Methyl Methacrylate (MMA) on a silica/silicon substrate bearing a heterojunction at a rotation speed of 800r/min for 10s by using a spin coater, heating the Methyl Methacrylate (MMA) on a heating table for 3 minutes after the spin coating is finished, and then spin-coating polymethyl methacrylate (PMMA) by the same method. Finally, an electron beam exposure is adopted to design an electrode pattern, wherein the acceleration voltage is 30keV, the beam current is 0.2nA, and the unit area charge quantity is 250 mu C/cm 2 And putting the exposed sample into a developing solution for 20s, and cleaning and drying the sample by using deionized water after the development is finished.
Finally, depositing a chromium electrode adhesion layer 10nm at two ends of the first layer of graphene and the second layer of graphene by an electron beam evaporation deposition method, and then depositing a gold electrode 50nm to form a metal electrode with the thickness of 60nm, wherein the vacuum degree is 2.0 multiplied by 10 when the electron beam evaporation deposition is carried out -4 Pa, the deposition rate of the chromium electrode adhesion layer is 0.4A/s, the deposition rate of the gold electrode is 0.4A/s, and after deposition is finished, PMMA is soaked in acetone, and the gold film outside the electrode pattern is removed, so that the photoelectric device can be obtained.
From the above embodiments, the invention provides a preparation method of a zinc telluride nanosheet, a photoelectric device, a preparation method and an application thereof. And then sequentially stacking a heterojunction formed by a first graphene layer, a zinc telluride nanosheet and a second graphene layer on the substrate, wherein metal electrodes are arranged at two ends of the graphene, so that the photoelectric device can be obtained. The photoelectric device has the functions of photoelectric detection and electro-optical modulation, and has the characteristics of wide response range, high responsivity, high stability and the like when being used as the photoelectric detector; when used as a fluorescence switch, the fluorescence is completely quenched when the bias reaches 8 volts. The photoelectric device has the characteristics of simple structure, high reliability, easiness in manufacturing and the like, and the application of the two-dimensional material in the field of photoelectric integration is expanded.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A preparation method of zinc telluride nanosheets is characterized by comprising the following steps:
zinc telluride powder and tellurium powder are used as raw materials, and zinc telluride is grown on the fluorine crystal mica sheet by adopting a physical vapor deposition method, so that the zinc telluride nanosheet is obtained.
2. The preparation method according to claim 1, wherein the mass ratio of the zinc telluride powder to the tellurium powder is 1:1-2; the carrier gas used in the physical vapor deposition method is hydrogen and argon, wherein the flow of the hydrogen is 10-30 sccm, and the flow of the argon is 60-100 sccm; the reaction temperature in the physical vapor deposition method is 900-1000 ℃, and the reaction time is 20-40 min.
3. The photoelectric device is characterized by comprising a heterojunction formed by a first layer of graphene, a zinc telluride nanosheet and a second layer of graphene which are sequentially stacked on a substrate, wherein metal electrodes are arranged at two ends of the first layer of graphene and the second layer of graphene; the zinc telluride nanosheet is prepared by the preparation method of claim 1 or 2.
4. The optoelectronic device according to claim 3, wherein the substrate is a silica/silicon substrate, wherein the thickness of the silica is in the range of 200 to 400nm.
5. The optoelectronic device according to claim 3 or 4, wherein the thickness of the zinc telluride nanosheets is from 20 to 80nm.
6. The optoelectronic device according to claim 5, wherein the number of layers of the first layer of graphene and the second layer of graphene is independently 1 to 10.
7. The optoelectronic device according to claim 3, 4 or 6, wherein the metal electrode consists of a gold electrode and an electrode adhesion layer, wherein the electrode adhesion layer comprises a titanium electrode adhesion layer, a chromium electrode adhesion layer or a nickel electrode adhesion layer; the thickness of the metal electrode is 40-60 nm, wherein the thickness ratio of the gold electrode to the electrode adhesion layer is 35-50.
8. A method of fabricating an optoelectronic device according to any one of claims 3 to 7, comprising the steps of:
(1) Preparing a first layer of graphene and a second layer of graphene by using a mechanical stripping method, and then sequentially stacking the first layer of graphene, the zinc telluride nanosheet and the second layer of graphene on a substrate from bottom to top to obtain a heterojunction;
(2) Designing an electrode pattern by adopting electron beam exposure;
(3) And arranging metal electrodes on the first layer of graphene and the second layer of graphene by adopting an electron beam evaporation deposition method to obtain the photoelectric device.
9. Use of an optoelectronic device according to any one of claims 3 to 7 for detecting optical signals in the visible-infrared band.
10. Use of an opto-electronic device according to any of claims 3 to 7 as a fluorescent switch.
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