CN115940831A - Linear Compensation Bias Circuit - Google Patents
Linear Compensation Bias Circuit Download PDFInfo
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- CN115940831A CN115940831A CN202211511726.2A CN202211511726A CN115940831A CN 115940831 A CN115940831 A CN 115940831A CN 202211511726 A CN202211511726 A CN 202211511726A CN 115940831 A CN115940831 A CN 115940831A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a linear compensation bias circuit, which comprises a linear adjusting unit and a temperature compensating unit, wherein the linear adjusting unit is respectively connected with a radio frequency amplifier and an external power supply; the linear adjusting unit comprises a first resistor, a second resistor and a first transistor, one end of the first resistor is connected with the base electrode of the power tube, the other end of the first resistor is connected with the emitting electrode of the first transistor, the base electrode of the first transistor is connected with one end of the second resistor, the other end of the second resistor is connected with an external power supply, and the collector electrode of the first transistor is connected with the temperature compensation unit. The linear compensation bias circuit can perform temperature compensation and large-signal linear compensation on the radio frequency amplifier, so that the temperature of the radio frequency amplifier is more stable, the linearity of the power tube is better, and the dynamic performance adjusting capability of the radio frequency amplifier circuit is improved.
Description
Technical Field
The invention relates to the field of radio frequency microwaves, in particular to a linear compensation bias circuit.
Background
With the continuous development of mobile communication technology, new mobile communication systems (5G) put higher demands on data transmission rate, and high broadband modulation signals are required for data transmission, which increases the difficulty of designing linear radio frequency power amplifiers.
When the radio frequency power amplifier works, the temperature of the amplifier gradually rises along with the increase of the working time of the power amplifier and a radio frequency input signal, the current of the amplifier is increased by the power tube core according to the physical characteristics (the temperature of a PN node rises, electrons in an emitting region are heated and excited, and the total number of drifting electrons increases along with the rise of the temperature), the working state of the amplifier is influenced, and the linearity of the amplifier is further influenced (the linearity is gradually reduced along with the change of the working state of a transistor). At this time, additional current compensation needs to be provided by the bias circuit to improve the circuit linearity, wherein fig. 1 is a schematic circuit structure diagram of the conventional linear compensation bias circuit; as shown in fig. 1, transistors HBT1, HBT2, and HBT3 constitute a current mirror, the current mirror and capacitor C1 constitute a linear bias circuit, and transistor HBT1, resistor R3, and capacitor C1 perform a linearization function. When the input signal increases, the base static bias voltage V of the power transistor HBT0 BE(0) Reduced and leakage of the rf signal to the bias circuit. The leakage signal passes through transistor HBT1 to ground via grounded capacitor C1. The leakage signal causes a static dc current of the transistor HBT1 to become large due to the rectifying action of the BE junction diode of the transistor HBT1, thereby causing the junction voltage V to become large BE(1) ) And decreases. The expression of the base bias voltage of the power transistor HBT0 can be written as:
V BE(0) ＝V B(1) -V BE(1) -I B(0) R 3 (1)
in the above formula (1), because of the voltage V B(1) Is fixed, so that the voltage V BE(1) Will compensate for the voltage V BE(0) Thereby improving the AM-AM/AM-PM distortion of the radio frequency path. The resistance of the bias circuit on the side of transistor HBT2 is much lower than that on the side of transistor HBT1, so the current passing on the left side is much larger than on the right side. The two transistors HBT2, HBT3 on the left side act as a voltage divider, and when the temperature of the transistors is raised by the current, the voltage V of the transistor HBT1 BE(1) Will be reduced, which will cause the current I output to the main path flowing into the power transistor HBT0 B(0) And is increased. However, the junction voltage of transistors HBT2 and HBT3 decreases correspondingly after the temperature increases, which increases the current flowing through transistors HBT2 and HBT3, thereby increasing the voltage drop of resistor R1. So that the base voltage V of transistor HBT1 B(1) Reduce and promote the current I B(0) And decreases.
However, in the above circuit, although transistor HBT3 has a temperature compensation capability, when the bias current is large, for example, when the bias current at normal temperature is 110mA, the difference between the bias currents under low-temperature and high-temperature operating conditions is about 20mA, and this deviation value still affects the operating performance and efficiency of the rf amplifier.
Therefore, there is a need to overcome the above-mentioned drawbacks by providing an improved linearity compensation bias circuit that can guarantee the operating performance of the rf amplifier.
Disclosure of Invention
The linear compensation bias circuit can perform temperature compensation and large-signal linear compensation on the radio frequency amplifier, so that the temperature of the radio frequency amplifier is more stable, the linearity of a power tube is better, and the dynamic performance adjusting capability of the radio frequency amplifier circuit is improved.
In order to achieve the above object, the present invention provides a linear compensation bias circuit, which is adapted to a radio frequency amplifier, and comprises a linear adjustment unit and a temperature compensation unit, wherein the linear adjustment unit is respectively connected to the radio frequency amplifier and an external power supply for adjusting the linearity of the radio frequency amplifier, the temperature compensation unit is respectively connected to the linear adjustment unit and another external power supply, and the temperature compensation unit is adjacent to a power tube of the radio frequency amplifier for sensing the temperature change of the power tube and performing temperature compensation on the power tube in real time according to the temperature change; the linear adjusting unit comprises a first resistor, a second resistor and a first transistor, one end of the first resistor is connected with the base of the power tube, the other end of the first resistor is connected with the emitting electrode of the first transistor, the base of the first transistor is connected with one end of the second resistor, the other end of the second resistor is connected with an external power supply, and the collector of the first transistor is connected with the temperature compensation unit.
Preferably, the linear adjusting unit further includes an inductor, and the inductor is connected between the first resistor and the emitter of the first transistor.
Preferably, the linear adjusting unit further includes a first capacitor and a second capacitor, one end of the first capacitor is connected to the base of the first transistor, and the other end of the first capacitor is grounded; one end of the second capacitor is connected with the other end of the second resistor, and the other end of the second capacitor is grounded.
Preferably, the temperature compensation unit includes a second transistor, a third resistor and a fourth resistor, a base of the second transistor is connected to a base of the first transistor, a collector of the second transistor is connected to a collector of the first transistor, an emitter of the second transistor is connected to one end of the fourth resistor and the base of the third transistor, and the other end of the fourth resistor is grounded; the collector electrode of the second transistor is connected with one end of a third resistor and the collector electrode of the first transistor, and the other end of the third resistor is connected with another external power supply; the collector of the third transistor is connected to the emitter of the first transistor, and the emitter of the third transistor is grounded.
Preferably, the temperature compensation unit further includes a third capacitor, one end of the third capacitor is connected to the other end of the third resistor, and the other end of the third capacitor is grounded.
Preferably, the third transistor and the first transistor are identical in size.
Compared with the prior art, the linear compensation bias circuit can adjust the linearity of the power tube of the radio frequency amplifier under the condition of large signal input through the linear adjusting unit, so that the linear compensation can be carried out on the power tube aiming at large signals, and the linearity of the power tube of the radio frequency amplifier can be adjusted and improved; meanwhile, the temperature compensation unit senses the temperature change of the power tube in real time and controls and adjusts the quiescent current of the power tube, so that the temperature compensation is carried out on the power tube, and the dynamic performance adjusting capability of the radio frequency amplifier circuit is improved.
The invention will become more apparent from the following description when taken in conjunction with the accompanying drawings, which illustrate embodiments of the invention.
Drawings
Fig. 1 is a schematic circuit diagram of a linear compensation bias circuit in the prior art.
Fig. 2 is a schematic circuit diagram of the linear compensation bias circuit of the present invention.
Fig. 3 is a schematic structural diagram of an application scenario of the linear compensation bias circuit of the present invention.
Fig. 4 is a graph comparing the dc output versus temperature curves of the application scenario of fig. 3 and the prior art application scenario.
Fig. 5 is a graph comparing the third stage base voltage with the rf input for the application scenario of fig. 3 and the prior art application scenario.
Detailed Description
Embodiments of the present invention will now be described with reference to the drawings, wherein like reference numerals represent like elements throughout. As described above, the present invention provides a linear compensation bias circuit, which is suitable for a radio frequency amplifier, and the linear compensation bias circuit of the present invention can perform temperature compensation and large signal linear compensation on the radio frequency amplifier, so that the temperature of the radio frequency amplifier is more stable, the linearity of a power tube is better, and the dynamic performance adjustment capability of the radio frequency amplifier circuit is improved.
Referring to fig. 2, fig. 2 is a circuit structure diagram of the linear compensation bias circuit of the present invention. As shown in the figure, the linear compensation bias circuit of the invention is suitable for a radio frequency amplifier; the linear compensation bias circuit comprises a linear adjusting unit and a temperature compensation unit, wherein the linear adjusting unit is respectively connected with the radio frequency amplifier and an external power supply Vbb and is used for adjusting the linearity of the radio frequency amplifier; the temperature compensation unit is respectively connected with the linear regulation unit and another external power supply Vcc, is adjacent to a power tube HBT0 of the radio-frequency amplifier and is used for accurately sensing the temperature change of the power tube HBT0 and performing temperature compensation on the power tube HBT0 in real time according to the temperature change condition.
Specifically, the linear adjustment unit includes a first resistor R1, a second resistor R2, and a first transistor HBT1, where one end of the first resistor R1 is connected to the base of the power transistor HBT0, the other end of the first resistor R1 is connected to the emitter of the first transistor HBT1, the base of the first transistor HBT1 is connected to one end of the second resistor R2, the other end of the second resistor R2 is connected to an external power Vbb, the external power Vbb provides an input current for the first transistor HBT1 through the second resistor R2, and meanwhile, the resistance of the second resistor R2 is used to control the magnitude of the input current; the collector of the first transistor HBT1 is connected to the temperature compensation unit. As a preferred embodiment of the present invention, the linear adjusting unit further includes a first capacitor C1 and a second capacitor C2, one end of the first capacitor C1 is connected to the base of the first transistor HBT1, and the other end is grounded, when a radio frequency signal leaks to the bias circuit, the leaked signal can directly reach the ground through the first capacitor C1, so as to reduce the influence on the bias circuit; one end of the second capacitor C2 is connected to the other end of the second resistor R2, the other end of the second capacitor C2 is grounded, and the second capacitor C2 is a decoupling capacitor connected in parallel to the power Vbb.
The temperature compensation unit further includes a second transistor HBT2, a third transistor HBT3, a third resistor R3, and a fourth resistor R4, wherein a base of the second transistor HBT2 is connected to a base of the first transistor HBT1, a collector of the second transistor HBT2 is connected to a collector of the first transistor HBT1, an emitter of the second transistor HBT2 is commonly connected to one end of the fourth resistor R4 and a base of the third transistor HBT3, and the other end of the fourth resistor R4 is grounded; a collector of the second transistor HBT2 is commonly connected with one end of a third resistor R3 and a collector of the first transistor HBT1, the other end of the third resistor R3 is connected with another external power source Vcc, and the external power source Vcc provides collector currents for the first transistor HBT1 and the second transistor HBT2 through the third resistor R3; the collector of the third transistor HBT3 is connected to the emitter of the first transistor HBT1, and the emitter of the third transistor HBT3 is grounded. As a preferred embodiment of the present invention, the temperature compensation unit further includes a third capacitor C3, one end of the third capacitor C3 is connected to the other end of the third resistor R3, the other end of the third capacitor C3 is grounded, and the third capacitor C32 is a decoupling capacitor connected in parallel to a power supply Vcc.
In the present invention, the third transistor HBT3 and the first transistor HBT1 have the same size, so that the currents flowing through the third transistor HBT3 and the first transistor HBT1 can be changed in synchronization with each other.
Furthermore, the linear adjustment unit further includes an inductor L1, where the inductor L1 is connected between the first resistor R1 and the emitter of the first transistor HBT 1; in the present invention, when the third transistor HBT3 is used to construct the feedback network, the impedance of the bias circuit as viewed from the direction of the radio frequency path is smaller, which makes the leakage of the radio frequency signal worse, and the leakage of the radio frequency signal can be restricted by adding the inductor L1, thereby ensuring the stability of the whole circuit operation.
Referring to fig. 2, the working principle of the linear compensation bias circuit of the present invention is described as follows:
when the INPUT radio frequency signal RF INPUT is increased, the base static bias voltage V of the power tube HBT0 BE(0) Reduced, leakage of RF signal to bias circuit；The leakage signal passes through the first transistor HBT1, the first capacitor C1 to ground; in addition, the leakage signal causes a static direct current of the first transistor HBT1 to become large due to the rectifying action of the BE junction diode of the first transistor HBT1, thereby causing the junction voltage V to become large BE(1) Reducing and compensating base static bias voltage V of HBT0 of power tube BE(0) The AM-AM/AM-PM distortion of the radio frequency amplifier is improved, the linearity of the HBT0 of the power tube is better, and the dynamic performance adjusting capability of the radio frequency amplifier circuit is improved; meanwhile, the linearity of the power tube HBT0 of the radio-frequency amplifier is adjusted under the condition of large-signal input.
The third transistor HBT3 of the temperature compensation unit is close to the power tube HBT0 as much as possible to sense power in real timeThe temperature of tube HBT0 varies. The second transistor HBT2 provides a direct current input current for the third transistor HBT3, and the fourth resistor R4 controls the magnitude of the current input to the third transistor HBT 3; in the present invention, since the third transistor HBT3 is identical in size to the first transistor HBT1, when the temperature of the power tube HTB0 rises, the BE junction diode of the first transistor HBT1 decreases, so that the output direct current I of the first transistor HBT1 CE(1) And is increased. While at the same time the output current I of the third transistor HBT3 CE(3) It will also increase. The third transistor HBT3 will convert the current I of the first transistor HBT1 CE(1) The base direct current I shunted and flowing into the power tube HBT0 B(0) And with ICE(3) ，I CE(1) The relationship of (a) is shown as follows:
I B(0) ＝I CE(1) -I CE(3)
therefore, when the temperature changes, the current changes of the first transistor HBT1 and the third transistor HBT3 are the same, and the base direct current I of the power transistor HBT0 is ensured B(0) The temperature compensation of the power tube HBT0 is realized without being influenced by temperature.
Referring to fig. 3 to fig. 5, the difference between the linear compensation bias circuit of the present invention and the prior art in the same application scenario will be described. As shown in fig. 3, the linear compensation BIAS circuit of the present invention is applied to a three-stage amplification circuit, wherein BIAS1, BIAS2, and BIAS3 are all the linear compensation BIAS circuits of the present invention, and in the same three-stage amplification circuit, a comparison graph of the scheme of the present invention and the ADS simulation curve of the scheme of the prior art in which the third-stage dc output of the rf amplification circuit varies with temperature is obtained through simulation, as shown in fig. 4, wherein curve a is generated by applying the scheme of the present invention, and curve b is generated by applying the scheme of the prior art, obviously, the amplitude of the current generated by applying the scheme of the present invention varies with temperature is minimum, and the temperature compensation of the rf amplifier is better realized; in addition, referring to fig. 5 again, in fig. 5, a curve d is generated by applying the scheme of the present invention, a curve c is generated by applying the prior art scheme, and it can be seen from fig. 5 that the voltage value of the curve c is reduced from 1.3V to 1.18V in the range of-30 dBm to 5dBm of the input rf signal, and the input signal variation has a great influence on the circuit; and in the curve d, the voltage value is basically kept at 1.3V within the range of-30 dBm to 5dBm of the input radio frequency signal, only a small reduction is realized, and the fluctuation is small.
In summary, the linearity compensation bias circuit of the present invention can adjust the linearity of the power transistor of the rf amplifier under the condition of large signal input through the linearity adjusting unit, so as to perform linear compensation on the power transistor for large signal, and adjust and improve the linearity of the power transistor of the rf amplifier; meanwhile, the temperature compensation unit senses the temperature change of the power tube in real time and controls and adjusts the quiescent current of the power tube, so that the temperature compensation is carried out on the power tube, and the dynamic performance adjusting capability of the radio frequency amplifier circuit is improved.
The present invention has been described in connection with the preferred embodiments, but the present invention is not limited to the embodiments disclosed above, and is intended to cover various modifications, equivalent combinations, which are within the spirit of the invention.
Claims (6)
1. A linear compensation bias circuit is suitable for a radio frequency amplifier and is characterized by comprising a linear adjusting unit and a temperature compensation unit, wherein the linear adjusting unit is respectively connected with the radio frequency amplifier and an external power supply and used for adjusting the linearity of the radio frequency amplifier, the temperature compensation unit is respectively connected with the linear adjusting unit and another external power supply, and the temperature compensation unit is adjacent to a power tube of the radio frequency amplifier and used for sensing the temperature change of the power tube and carrying out temperature compensation on the power tube in real time according to the temperature change condition; the linear adjusting unit comprises a first resistor, a second resistor and a first transistor, one end of the first resistor is connected with the base of the power tube, the other end of the first resistor is connected with the emitting electrode of the first transistor, the base of the first transistor is connected with one end of the second resistor, the other end of the second resistor is connected with an external power supply, and the collector of the first transistor is connected with the temperature compensation unit.
2. The linearity compensation bias circuit of claim 1, wherein said linearity adjustment unit further comprises an inductor, said inductor being connected between said first resistor and an emitter of said first transistor.
3. The linear compensation bias circuit of claim 1, wherein the linear adjustment unit further comprises a first capacitor and a second capacitor, one end of the first capacitor is connected to the base of the first transistor, and the other end is grounded; one end of the second capacitor is connected with the other end of the second resistor, and the other end of the second capacitor is grounded.
4. The linearity compensation bias circuit according to claim 1, wherein the temperature compensation unit comprises a second transistor, a third resistor and a fourth resistor, wherein a base of the second transistor is connected with a base of the first transistor, a collector of the second transistor is connected with a collector of the first transistor, an emitter of the second transistor is commonly connected with one end of the fourth resistor and a base of the third transistor, and the other end of the fourth resistor is grounded; the collector of the second transistor is commonly connected with one end of a third resistor and the collector of the first transistor, and the other end of the third resistor is connected with another external power supply; the collector of the third transistor is connected to the emitter of the first transistor, and the emitter of the third transistor is grounded.
5. The linearity compensation bias circuit of claim 4, wherein said temperature compensation unit further comprises a third capacitor, one end of said third capacitor is connected to the other end of said third resistor, and the other end of said third capacitor is grounded.
6. The linearity compensation bias circuit of claim 4, wherein the third transistor is the same size as the first transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211511726.2A CN115940831A (en) | 2022-11-29 | 2022-11-29 | Linear Compensation Bias Circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211511726.2A CN115940831A (en) | 2022-11-29 | 2022-11-29 | Linear Compensation Bias Circuit |
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| Publication Number | Publication Date |
|---|---|
| CN115940831A true CN115940831A (en) | 2023-04-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211511726.2A Pending CN115940831A (en) | 2022-11-29 | 2022-11-29 | Linear Compensation Bias Circuit |
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|---|---|
| CN (1) | CN115940831A (en) |
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- 2022-11-29 CN CN202211511726.2A patent/CN115940831A/en active Pending
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