CN115051655A - Radio frequency power amplifier biasing circuit and radio frequency power amplifier - Google Patents

Radio frequency power amplifier biasing circuit and radio frequency power amplifier Download PDF

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Publication number
CN115051655A
CN115051655A CN202210809870.8A CN202210809870A CN115051655A CN 115051655 A CN115051655 A CN 115051655A CN 202210809870 A CN202210809870 A CN 202210809870A CN 115051655 A CN115051655 A CN 115051655A
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China
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transistor
resistor
radio frequency
power amplifier
circuit
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汤委龙
关宇涵
张志浩
章国豪
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Guangdong University of Technology
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Guangdong University of Technology
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

The invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier bias circuit and a radio frequency power amplifier. When the temperature changes, the feedback adjusting circuit adjusts the static current and the static bias voltage output by the bias output circuit to provide stable static current and static bias voltage for the radio frequency power amplifier circuit, so that the unstable influence of the temperature change on the power amplifier of the radio frequency power amplifier tube is reduced, the stability of the bias circuit is improved, and the linearity of the bias circuit is improved.

Description

Radio frequency power amplifier biasing circuit and radio frequency power amplifier
Technical Field
The invention relates to the technical field of power amplifiers, in particular to a radio frequency power amplifier bias circuit and a radio frequency power amplifier.
Background
Power amplifiers are indispensable components in wireless communication systems. With the rapid development of technology, wireless communication systems have required higher data rates for voice communication, video watching, video downloading, internet access, and the like, and the higher data rates mean that power amplifiers need to have higher linearity and amplification efficiency.
In order to obtain better linearity and efficiency of a radio frequency power amplifier circuit in a power amplifier, the bias point of an HBT (heterojunction bipolar transistor) in the circuit is changed along with the change of input power by increasing an input signal. However, when the input power is too high, gain shrinkage occurs, affecting the linearity of the power amplifier.
In the prior art, the gain compression of the power amplifier is suppressed by designing a bias circuit. Referring to fig. 1, fig. 1 shows a typical bias circuit, when a power amplifier amplifies a signal, the power amplifier accumulates more heat due to self-heating effect, which causes an increase in ambient temperature, and the base current of the HBT0 of the rf amplifier tube increases gradually, so that the HBTs 1-HBT3 of the bias circuit are affected, which causes instability of the circuit, which causes instability of the bias current, and thus a decrease in linearity.
Disclosure of Invention
The invention provides a radio frequency power amplifier bias circuit and a radio frequency power amplifier, which are used for improving the stability of the bias circuit and improving the linearity of the conventional bias circuit.
The invention provides a radio frequency power amplifier bias circuit, which comprises: the radio frequency amplifier comprises a voltage division resistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a radio frequency amplifier tube, a first transistor, a second transistor, a third transistor, a fourth transistor and a fifth transistor; a blocking capacitor and a first capacitor; a first power supply, a second power supply;
one end of the blocking capacitor is respectively connected with the first end of the radio frequency amplifying tube and the first end of the divider resistor;
the second end of the voltage division resistor is respectively connected with the first end of the first resistor and the third end of the first transistor;
the third end of the radio frequency amplifying tube is grounded, and the second end of the radio frequency amplifying tube is connected with the second power supply;
the second end of the first transistor is connected with the second end of the ninth resistor, and the first end of the ninth resistor is connected with the second power supply;
a first end of the first transistor is connected with a first end of the first capacitor, a second end of the eighth resistor and a second end of the third transistor respectively;
the third end of the third transistor is connected with the first end of the second resistor;
a first end of the third transistor is respectively connected with a second end of the fourth transistor and a second end of the seventh resistor;
a first end of the fourth transistor is connected with a second end of the sixth resistor and a second end of the second transistor respectively;
the third end of the fourth transistor is respectively connected with the second end of the fourth resistor and the first end of the third resistor;
a first end of the sixth resistor, a first end of the seventh resistor and a first end of the eighth resistor are connected with the first power supply;
the first end of the second transistor is connected with the first end of the fourth resistor;
the third end of the second transistor is connected with the second end of the fifth transistor, and the second end of the fifth transistor is connected with the first end of the fifth transistor;
and the third end of the fifth transistor, the second end of the third resistor, the second end of the second resistor, the second end of the first capacitor and the second end of the first resistor are all grounded.
Optionally, the radio frequency power amplifier tube is an HBT0 transistor, and the first end of the radio frequency power amplifier tube is a base of an HBT0 transistor; the second end of the radio frequency amplifying tube is a collector electrode of an HBT0 transistor; and the third end of the radio frequency amplifying tube is an emitter of the HBT0 transistor.
Optionally, the first transistor is an HBT1 transistor, and the first terminal of the first transistor is a base of an HBT1 transistor; the second end of the first transistor is the collector of the HBT1 transistor; the third terminal of the first transistor is the emitter of the transistor HBT 1.
Optionally, the second transistor is an HBT2 transistor, and the first end of the second transistor is a base of an HBT2 transistor; the second end of the second transistor is a collector of the HBT2 transistor; and the third end of the second transistor is an emitter of the HBT2 transistor.
Optionally, the third transistor is an HBT3 transistor, and the first end of the third transistor is a base of an HBT3 transistor; the second end of the third transistor is the collector of the HBT3 transistor; the third terminal of the third transistor is the emitter of the transistor HBT 3.
Optionally, the fourth transistor is an HBT4 transistor, and the first terminal of the fourth transistor is a base of an HBT4 transistor; the second end of the fourth transistor is the collector of the HBT4 transistor; and the third end of the fourth transistor is an emitter of the HBT4 transistor.
Optionally, the fifth transistor is an HBT5 transistor, and the first terminal of the fifth transistor is a base of an HBT5 transistor; the second end of the fifth transistor is the collector of the HBT5 transistor; and the third end of the fifth transistor is an emitter of the HBT5 transistor.
Optionally, the other end of the blocking capacitor is a signal input end, and the second end of the radio frequency power amplifying tube is a signal output end.
Optionally, the dc blocking capacitor and the first capacitor are nonpolar capacitors.
The invention also provides a radio frequency power amplifier which comprises the radio frequency power amplifier biasing circuit.
According to the technical scheme, the invention has the following advantages:
the invention provides a radio frequency power amplifier biasing circuit, which is characterized in that a feedback adjusting loop is formed by a third transistor, a fourth transistor, a seventh resistor and an eighth resistor, a biasing output loop is formed by a first transistor, a second transistor, a fifth transistor, a third resistor, a fourth resistor, a sixth resistor and a ninth resistor, a radio frequency power amplifier loop is formed by a divider resistor, a blocking capacitor and a radio frequency power amplifier tube, when the temperature changes, the static current and the static bias voltage output by the biasing output loop are adjusted by the feedback adjusting loop, so that the stable static current and the stable bias voltage are provided for the radio frequency power amplifier loop, the unstable influence of the temperature change on the power amplifier of the radio frequency power amplifier tube is reduced, the stability of the biasing circuit is improved, and the linearity of the biasing circuit is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a conventional bias circuit;
FIG. 2 is a schematic illustration of a gain curve AM-AM and a phase curve AM-PM;
FIG. 3 is a schematic diagram of a gain curve AM-AM and a phase curve AM-PM of a prior art bias circuit;
fig. 4 is a schematic structural diagram of a radio frequency power amplifier bias circuit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a gain curve AM-AM and a phase curve AM-PM obtained by simulation at an input of-15 dBm to 13dBm according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a gain curve AM-AM and a phase curve AM-PM obtained by simulation at 40 ℃ -120 ℃ according to an embodiment of the present invention.
Detailed Description
As the high data rate standards such as WiFi, WiMAX, UMTS-WCDMA and the like in the prior art use non-constant envelope signals (x-QAM and QPSK modulation), the linearity index of the power amplifier can be evaluated by the flatness of a gain curve AM-AM and a phase curve AM-PM. As shown in fig. 2, fig. 2 is a schematic diagram of a gain curve AM-AM curve and a phase curve AM-PM, in fig. 2, the left curve is an AM-AM curve, and the right curve is an AM-PM curve. In the AM-AM curve, the point where the gain corresponding to the input power is compressed by 1dB is referred to as point P1 dB. In the AM-PM curve, the phase changes more dramatically when point P1dB is exceeded.
For a radio frequency power amplifier circuit, in order to obtain better amplification efficiency and linearity, the best method is to make the bias point of the power amplifier tube HBT change along with the change of input power. However, due to the diode rectification characteristic of the HBT transistor base emitter, most of the negative half of the input signal is cut off as the input signal increases, and as known from the fourier transform, the cut-off part contains a dc signal, so the static operating point of the transistor changes, and the transconductance of the transistor changes, resulting in the degradation of linearity.
In order to improve the linearity of the rf power amplifier circuit, a bias circuit is proposed in the prior art. Referring to fig. 1, fig. 1 shows a conventional bias circuit, in which a linearized bias module is composed of R0, HBT1 and capacitor C1, RFin is a radio frequency signal input terminal, and when an input radio frequency signal increases, V is a voltage of the input radio frequency signal due to the rectifying characteristic of the HBT 0-based emitter diode be0 Reducing leakage of RF signal to bias module via C 1 Short to ground, so that the base voltage of HBT1 has only a DC component, i.e., HBT1 has a fixed base voltage V b1 At this time, the base voltage of HBT0 is: v be0 ＝V b1 -I 0 R 0 -V be1 . Due to the rectifying characteristics of HBT1 emitter diode, its emitter voltage V be1 Is reduced, thereby V be0 Is increased so that V can be compensated for during the just-on stage of the circuit be0 Therefore, HBT0 can still keep enough bias voltage and restrain gain compression under high power state, thereby improving linearity of the existing radio frequency power amplifier circuit.
However, the majority of the current HBT transistors are fabricated by using the mainstream GaAs (gallium arsenide) process, and since the thermal conductivity of GaAs is very low and decreases with the increase of temperature when affected by temperature, when the power amplifier tube in the power amplifier is operated in a large signal state, considerable power is dissipated and more heat is accumulated, which is the self-heating effect. Since the base-emitter junction of a transistor can be considered as a PN junction, the electrons in the emitter region are thermally excited by the temperature rise, and the total number of drifting electrons increases gradually with the temperature rise.
The influence of temperature on the parameters of a transistor includes the following three aspects: 1. temperature pair U BE In Ib E When not changed, U increases with temperature BE Will be reduced. 2. Temperature pair Ic BO Influence of Ic BO Is the reverse saturation current of the collector, the temperature rises by 10 ℃ every time, Ic BO Approximately doubled. 3. The influence of the temperature on the amplification factor beta is that the beta value is increased by 0.5-1% when the temperature is increased by 1 ℃.
The influence of the temperature drift of the transistor on the power amplifier manufactured by adopting the gallium arsenide process can be shown in that the direct current of the collector electrode of the transistor is increased along with the increase of the environmental temperature, and the change of the direct current of the collector electrode of the transistor can change the static working point of the power amplifier, so that the power amplifier cannot be ensured to be stable in gain and linearity within the changed temperature range. Thus, temperature also affects the power gain of the transistor. Meanwhile, DEVM (Delta EVM error vector magnitude) may degrade during a transmission burst because EVM (error vector magnitude) is very sensitive to power gain variations and junction temperature increases.
Thus, in practical applications, since the transistor distributions of figure 1 are relatively close, Ibe0 of HBT0 will gradually increase as temperature increases, with V being the same as the temperature of HBT0 be0 Will continue to increase and the existing bias circuit cannot continue to adjust V be0 To reduce the temperature rise to the voltage V be0 And also cannot lower Ibe0 of HBT0, resulting in both HBTs 1-3 on the bias circuit being affected. Tests prove that a relatively large temperature difference exists between the bias circuit and the radio frequency main circuit (the branch where the HBT0 is located) in fig. 1, so that errors occur in the generated bias current, and the linearity is deteriorated.
Even if the Ibe1 of HBT1 is lowered by lowering the node voltage by means of a current mirror, the obtained effect is not significant, and the circuit may become unstable when the temperature rises, resulting in deterioration of linearity. When the linearity is adjusted by adjusting the values of C1 and R0, due to the fact that gain fluctuates under the states of different powers and different frequencies, the change of C1 mainly aims at adjustment in different frequency ranges, corresponding power is mainly affected by R0 and HBT1, the fluctuation range is large, adjustment is difficult, and the linearity performance is poor under the conditions of medium power to high power.
Referring to fig. 3, fig. 3 is a schematic diagram of a gain curve AM-AM and a phase curve AM-PM of a conventional bias circuit. When the R0 is increased or decreased and the C1 is increased or decreased, the fluctuation of the gain curve AM-AM and the phase curve AM-PM of the existing bias circuit is severe, and the stability and the linearity of the bias circuit are poor.
In view of this, the present invention provides a bias circuit of a radio frequency power amplifier and a radio frequency power amplifier, which are used to improve the stability of the bias circuit and improve the linearity of the existing bias circuit.
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a bias circuit of a radio frequency power amplifier according to an embodiment of the present invention.
The embodiment provides a radio frequency power amplifier bias circuit, which includes: a voltage dividing resistor R0, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a radio frequency amplifier HBT0, a first transistor HBT1, a second transistor HBT2, a third transistor HBT3, a fourth transistor HBT4 and a fifth transistor HBT 5; a DC blocking capacitor C0, a first capacitor C1; a first power supply Vref and a second power supply VCC.
One end of the blocking capacitor C0 is respectively connected with the base electrode of the radio frequency amplification tube HBT0 and the first end of the voltage-dividing resistor R0; the other end of the dc blocking capacitor C0 is a signal input terminal RFin.
A second terminal of the voltage-dividing resistor R0 is connected to a first terminal of the first resistor R1 and the emitter of the first transistor HBT1, respectively.
The emitter of the rf amplifier tube HBT0 is grounded, and the collector of the rf amplifier tube HBT0 is connected to the second power supply VCC and serves as a power output terminal RFout.
The collector of the first transistor HBT1 is connected to the second terminal of the ninth resistor R9, and the first terminal of the ninth resistor R9 is connected to the second power VCC;
the base of the first transistor HBT1 is respectively connected with the first end of the first capacitor C1, the second end of the eighth resistor R8 and the collector of the third transistor HBT 3;
the emitter of the third transistor HBT3 is connected to the first end of the second resistor R2;
the base of the third transistor HBT3 is connected to the collector of the fourth transistor HBT4 and the second end of the seventh resistor R7, respectively;
the base of the fourth transistor HBT4 is connected to the second terminal of the sixth resistor R6 and the collector of the second transistor HBT2, respectively;
an emitter of the fourth transistor HBT4 is connected to the second terminal of the fourth resistor R4 and the first terminal of the third resistor R3, respectively;
a first end of the sixth resistor R6, a first end of the seventh resistor R7 and a first end of the eighth resistor R8 are connected with a first power supply Vref;
the base of the second transistor HBT2 is connected to the first end of the fourth resistor R4;
the emitter of the second transistor HBT2 is connected to the collector of the fifth transistor HBT 5; the collector of the fifth transistor HBT5 is connected to the base of the fifth transistor HBT 5;
an emitter of the fifth transistor HBT5, a second terminal of the third resistor R3, a second terminal of the second resistor R2, a second terminal of the first capacitor C1, and a second terminal of the first resistor R1 are all grounded.
The working principle is as follows:
when the rf amplifier HBT0 is in an amplifying state and the input power is too high, the temperature of the rf amplifier HBT0 increases due to the self-heating effect, and in an actual chip layout application, the second transistor HBT2 and the fifth transistor HBT5 are disposed near the rf amplifier HBT0, so that the temperature of the rf amplifier HBT0 increases, which causes the temperature of the second transistor HBT2 and the fifth transistor HBT5 to increase. It can be known from the thermal effect formula Q of current UIt that the on-state voltages of the rf amplifier HBT0, the second transistor HBT2 and the fifth transistor HBT5 decrease as the temperature increases. When the on-state voltage of the radio frequency amplification tube HBT0 is reduced, the base current Ib of the radio frequency amplification tube HBT0 is increased, and since the radio frequency amplification tube HBT0 is in an amplification state, the collector current of the radio frequency amplification tube HBT0 is also increased due to the increase of the base current Ib, and the increase of Ib and Ic easily causes the output power to be too large, thereby causing the circuit to be burnt. To avoid this, the Ib and Ic need to be adjusted in time.
In the present embodiment, when the on-voltage of the second transistor HBT2 decreases, the base current Ib2 of the second transistor HBT2 increases, causing the collector current Ic2 of HBT2 to increase, so that the current I flowing through the sixth resistor R6 ref Become large, current I ref The voltage drop U6 of the sixth resistor R6 is as follows from fig. 4, which results in a larger voltage drop across the sixth resistor R6: u6 ═ V ref V2, where V2 is the base potential of the fourth transistor HBT4, it can be seen that the voltage drop across the sixth resistor R6 increases to lower the base potential V2 of the fourth transistor HBT4, the base potential V2 decreases to reduce the current I4, and the voltage drop across the seventh resistor R7 decreases to reduce the current I4.
Similarly, the voltage drop across the seventh resistor R7 decreases to raise the base potential V3 of HBT3, V3 increases to increase the current I3 of the eighth resistor R8, and the current I3 increases to increase the voltage drop across the eighth resistor R8.
Similarly, the voltage drop of the eighth resistor R8 increases to make the base potential V of the first transistor HBT1 b1 Decrease, V b1 Decrease the electricity flowing through the ninth resistor R9The current becomes small, thereby making the current I1 of the emitter of the first transistor HBT1 small. The current flowing through the ninth resistor R9 becomes smaller, which reduces the voltage drop of the ninth resistor R9, and thus the collector potential V of the HBT1 becomes smaller c1 The node voltage of (2) becomes large. According to formula V e1 ＝V b1 +V c1 +1.3(1.3 is the HBT turn-on voltage), V b1 Reduced amplitude ratio V c1 So that V is large e1 And decreases.
And the emitter of the first transistor HBT1 is connected to a first resistor R1 and thus has V e1 ＝I5·R1，V e1 The reduction reduces the current I5 flowing through the first resistor R1, and I1 is equal to I5+ Ib, in this embodiment, the variation of the current I5 of the first resistor R1 is small, so that I1 mainly affects the base current Ib of HBT0, and when I1 becomes small, the base current Ib of HBT0 also becomes small. The collector current Ic is reduced by reducing the base current Ib, so that the problem of the increase of the Ib and Ic currents caused by the temperature rise is solved.
On the other hand, according to the principle of equipotentiality, V e1 Ib (R0+ R _ HBT0) ═ Ib · R0+ Ib · R _ HBT0, where R _ HBT0 is the equivalent resistance when HBT0 is turned on, Ib · R _ HBT0 is the voltage Vbe _ HBT0 of the base emitter of HBT0, Ib is reduced, and available Vbe _ HBT0 is also reduced, thereby avoiding the increase of Vbe _ HBT0 due to temperature rise, realizing temperature compensation, providing stable quiescent current for radio frequency amplifier tube HBT0, improving the stability of the bias circuit, and further optimizing the linearity of the bias circuit.
In the present embodiment, a feedback regulation loop is formed by the third transistor HBT3, the fourth transistor HBT4, the seventh resistor R7, and the eighth resistor R8, wherein the feedback regulation loop is a common emitter in-phase amplifying circuit; a first transistor HBT1, a second transistor HBT2, a fifth transistor HBT5, a third resistor R3, a fourth resistor R4, a sixth resistor R6 and a ninth resistor R9 form a bias output loop; a radio frequency power amplifier loop is formed by a voltage dividing resistor R0, a blocking capacitor C0 and a radio frequency power amplifier HBT 0. When the temperature changes (such as temperature rise), the current change and the potential change of a bias output loop formed by combining HBT1, HBT2, HBT5, R3, R4, R6 and R9 are adjusted in a self-adaptive mode according to the temperature change through a feedback adjusting loop, so that the static current and the static bias voltage of HBT0 affected by the temperature are adjusted in time, stable static current and stable static bias voltage are provided for radio frequency HBT0, the power amplifier instability influence of the temperature change on a radio frequency power amplifier tube is reduced, the stability of a bias circuit is improved, and the linearity of the bias circuit is improved.
As a further improvement, in this embodiment, the first capacitor C1 and the parallel R1 are connected in parallel, so that when a radio frequency signal flows into the bias circuit, the radio frequency signal can flow into the C1 through the HBT1 and then be filtered to the ground, and a part of the radio frequency signal is distributed to the ground through the R1, so as to further filter the radio frequency signal, thereby avoiding the unstable influence of the radio frequency signal on the bias circuit, and improving the linearity of the whole circuit.
Further, C0 is a dc blocking capacitor, and 47PF can be used.
Further, the dc blocking capacitor C0 and the first capacitor C1 may be nonpolar capacitors.
In order to show the effect that the radio frequency power amplifier bias circuit provided by the invention can obtain, the following description is made in combination with the simulation result.
In this embodiment, R9 is 800 Ω, R6 is 300 Ω, R7 is 200 Ω, R8 is 380 Ω, R4 is 2300 Ω, R3 is 4000 Ω, R2 is 2500 Ω, R1 is 600 Ω, R0 is 180 Ω, C1 is 3pF, and the input power is-15 to 13 dBm. Referring to fig. 5, fig. 5 is a schematic diagram of a gain curve AM-AM and a phase curve AM-PM obtained by simulation at an input of-15 dBm to 13dBm according to an embodiment of the present invention. As can be seen from fig. 5, compared with the conventional bias circuit, the AM-AM fluctuation is within 0.1dB and the AM-PM fluctuation is within 1 ° in the embodiment of the present invention under the input power of-15 to 13dBm, while the AM-AM fluctuation and the AM-PM fluctuation are within 0.3dB and 4 ° respectively in the prior art, which shows that the AM-AM and AM-PM curves of the embodiment of the present invention have better flatness, and the circuit stability and reliability are better compared with the prior art.
Referring to fig. 6, fig. 6 is a schematic diagram of a gain curve AM-AM and a phase curve AM-PM obtained by simulation at 40-120 ℃ according to an embodiment of the present invention.
As can be seen from FIG. 6, in the prior art, both AM-AM and AM-PM change more and more strongly with the temperature increase, but the present embodiment can still maintain a small performance change during the temperature increase. Therefore, the bias circuit provided by the embodiment can avoid the unstable circuit condition caused by temperature change on the whole, and improve the reliability and stability of the bias circuit, so that the linearity of the bias circuit is improved, and the stability of the whole radio frequency power amplifier is improved.
The second embodiment of the invention also provides a radio frequency power amplifier; the radio frequency power amplifier comprises the radio frequency power amplifier biasing circuit according to the first embodiment.
Through the above design, it can be clearly understood by those skilled in the art that the overall stable performance can be realized by the scheme of the present invention, and for convenience and simplicity of description, the specific working processes of the system, the apparatus and the unit described above may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the several embodiments provided in the present application, it should be understood that the disclosed system, apparatus and method may be implemented in other manners. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated unit, if implemented in the form of a software functional unit and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-only memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A radio frequency power amplifier bias circuit, characterized in that, includes: the radio frequency amplifier comprises a voltage division resistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a radio frequency amplifier tube, a first transistor, a second transistor, a third transistor, a fourth transistor and a fifth transistor; a blocking capacitor and a first capacitor; a first power supply, a second power supply;
one end of the blocking capacitor is respectively connected with the first end of the radio frequency amplifying tube and the first end of the divider resistor;
the second end of the voltage division resistor is respectively connected with the first end of the first resistor and the third end of the first transistor;
the third end of the radio frequency amplifying tube is grounded, and the second end of the radio frequency amplifying tube is connected with the second power supply;
the second end of the first transistor is connected with the second end of the ninth resistor, and the first end of the ninth resistor is connected with the second power supply;
a first end of the first transistor is connected with a first end of the first capacitor, a second end of the eighth resistor and a second end of the third transistor respectively;
the third end of the third transistor is connected with the first end of the second resistor;
a first end of the third transistor is respectively connected with a second end of the fourth transistor and a second end of the seventh resistor;
a first end of the fourth transistor is connected with a second end of the sixth resistor and a second end of the second transistor respectively;
the third end of the fourth transistor is respectively connected with the second end of the fourth resistor and the first end of the third resistor;
a first end of the sixth resistor, a first end of the seventh resistor and a first end of the eighth resistor are connected with the first power supply;
the first end of the second transistor is connected with the first end of the fourth resistor;
the third end of the second transistor is connected with the second end of the fifth transistor, and the second end of the fifth transistor is connected with the first end of the fifth transistor;
and the third end of the fifth transistor, the second end of the third resistor, the second end of the second resistor, the second end of the first capacitor and the second end of the first resistor are all grounded.
2. The circuit of claim 1, wherein the rf power amplifier tube is an HBT0 transistor, and the first end of the rf power amplifier tube is a base of an HBT0 transistor; the second end of the radio frequency amplifying tube is a collector electrode of an HBT0 transistor; and the third end of the radio frequency amplifying tube is an emitter of a HBT0 transistor.
3. The circuit of claim 1 wherein the first transistor is an HBT1 transistor, the first terminal of the first transistor being the base of an HBT1 transistor; the second end of the first transistor is the collector of the HBT1 transistor; the third terminal of the first transistor is the emitter of the transistor HBT 1.
4. The circuit of claim 1 wherein the second transistor is an HBT2 transistor, the first terminal of the second transistor being the base of an HBT2 transistor; the second end of the second transistor is a collector of an HBT2 transistor; and the third end of the second transistor is an emitter of the HBT2 transistor.
5. The circuit of claim 1 wherein the third transistor is an HBT3 transistor, the first terminal of the third transistor being the base of an HBT3 transistor; the second end of the third transistor is the collector of the HBT3 transistor; the third terminal of the third transistor is the emitter of the transistor HBT 3.
6. The circuit of claim 1 wherein the fourth transistor is an HBT4 transistor, the first terminal of the fourth transistor being the base of an HBT4 transistor; the second end of the fourth transistor is the collector of the HBT4 transistor; and the third end of the fourth transistor is an emitter of the HBT4 transistor.
7. The circuit of claim 1 wherein the fifth transistor is an HBT5 transistor, the first terminal of the fifth transistor being the base of an HBT5 transistor; the second end of the fifth transistor is the collector of the HBT5 transistor; and the third end of the fifth transistor is an emitter of the HBT5 transistor.
8. The circuit of claim 1, wherein the other end of the dc blocking capacitor is a signal input end, and the second end of the rf power amplifier tube is a signal output end.
9. The circuit of claim 1, wherein the dc blocking capacitor and the first capacitor are non-polar capacitors.
10. A radio frequency power amplifier comprising a radio frequency power amplifier bias circuit according to any one of claims 1-9.
CN202210809870.8A 2022-07-11 2022-07-11 Radio frequency power amplifier biasing circuit and radio frequency power amplifier Pending CN115051655A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110120788A (en) * 2019-06-06 2019-08-13 广东工业大学 A kind of biasing circuit and power amplifier for power amplifier
CN110190824A (en) * 2019-05-30 2019-08-30 广东工业大学 A kind of active biased network and a kind of radio-frequency power amplifier
US20210194441A1 (en) * 2019-12-19 2021-06-24 Smarter Microelectronics (Guang Zhou) Co., Ltd. Gain compression compensation circuit of radio frequency power amplifier
CN113193841A (en) * 2021-05-18 2021-07-30 芜湖麦可威电磁科技有限公司 Amplifier bias circuit with enable control
CN113271069A (en) * 2021-05-14 2021-08-17 广东工业大学 Temperature compensation bias circuit of radio frequency power amplifier and radio frequency power amplifier
CN113489461A (en) * 2021-07-28 2021-10-08 电子科技大学 Radio frequency predistortion linearizer and radio frequency power amplifier

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190824A (en) * 2019-05-30 2019-08-30 广东工业大学 A kind of active biased network and a kind of radio-frequency power amplifier
CN110120788A (en) * 2019-06-06 2019-08-13 广东工业大学 A kind of biasing circuit and power amplifier for power amplifier
US20210194441A1 (en) * 2019-12-19 2021-06-24 Smarter Microelectronics (Guang Zhou) Co., Ltd. Gain compression compensation circuit of radio frequency power amplifier
CN113271069A (en) * 2021-05-14 2021-08-17 广东工业大学 Temperature compensation bias circuit of radio frequency power amplifier and radio frequency power amplifier
CN113193841A (en) * 2021-05-18 2021-07-30 芜湖麦可威电磁科技有限公司 Amplifier bias circuit with enable control
CN113489461A (en) * 2021-07-28 2021-10-08 电子科技大学 Radio frequency predistortion linearizer and radio frequency power amplifier

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