CN115939211A - MOSFET structure for improving radio frequency switch performance - Google Patents
MOSFET structure for improving radio frequency switch performance Download PDFInfo
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- CN115939211A CN115939211A CN202211240902.3A CN202211240902A CN115939211A CN 115939211 A CN115939211 A CN 115939211A CN 202211240902 A CN202211240902 A CN 202211240902A CN 115939211 A CN115939211 A CN 115939211A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a MOSFET structure for improving the performance of a radio frequency switch, and relates to the field of switch devices. The MOSFET comprises a MOSFET basic structure, wherein a first source electrode, a drain electrode and a second source electrode are respectively provided with an inserting finger-shaped structure which is formed by a first metal layer, a second metal layer and a third metal layer and is not overlapped by metal layers in the horizontal direction; the width of each metal layer is kept consistent; the first through holes, the second through holes and the third through holes are all arranged in the switching area, and the through holes are arranged in a staggered mode and are not overlapped in the horizontal direction. On the premise of not changing the fundamental structure of the MOSFET, the invention can reduce the parasitic capacitance generated by the metal of the source and the drain by staggering the source and the drain through holes, adopting the finger-inserting structure for the metal layer and making the source and the drain through holes into staggering arrangement, thereby improving the characteristics of the radio frequency switch.
Description
Technical Field
The present invention relates to switching devices, and more particularly to a MOSFET structure for improved rf switching performance.
Background
The radio frequency switch is widely applied to various fields such as a wireless communication system, the avionics industry, a radar system and the like. While the quality factor FOM = Ron × Coff (precision of write) is a key index for evaluating the performance of the switch or the process performance, ron and Coff have an influence on the insertion loss and the isolation respectively, and the magnitude of the isolation depends on the capacitance Coff in the off state.
Two prior H-Gate MOSFET structures are shown in fig. 1 and fig. 2, which are both top views, in fig. 1, the Gate, the drain 511, the first source 53 and the second source 54 are all composed of a single finger, reference numeral 52 is polysilicon (Poly-Si) of the Gate G1, the first source 53 and the drain 511 are separated by the first Gate G1, the second source 54 and the drain 511 are separated by the second Gate G2, reference numeral 510 is a via structure of the first source 53, reference numeral 58 is a via structure of the drain 511, and reference numeral 59 is a via structure of the second source 54. In fig. 2, reference numerals M2_ S1 and M2_ S2 are two metal layer connections of a source, and M2_ D1 is a metal layer connection of a drain, respectively, and an off-state capacitance between the two sources and the drain includes not only a parasitic capacitance between metal layers but also a parasitic capacitance between vias. Parasitic capacitance between metal and a through hole between a source electrode and a drain electrode of the existing MOSFET structure is large, so that a quality factor FOM is large, the off-state capacitance Coff is generally large, and the reduction of the off-state capacitance Coff is very important for improving radio frequency characteristics such as radio frequency switch isolation degree and harmonic waves. Therefore, there is a need to provide a technical solution to solve the above problems.
Disclosure of Invention
The present invention provides a MOSFET structure that improves the performance of radio frequency switches, solving the above problems.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention discloses a MOSFET structure for improving the performance of a radio frequency switch, which comprises a MOSFET basic structure, wherein the MOSFET basic structure is composed of a first source electrode, a drain electrode, a second source electrode, a first grid electrode arranged between the first source electrode and the drain electrode and a second grid electrode arranged between the second source electrode and the drain electrode;
the first source electrode, the drain electrode and the second source electrode are respectively provided with an inserting finger-shaped structure which is formed by a first metal layer, a second metal layer and a third metal layer and does not have metal layer overlapping in the horizontal direction; the widths of the first metal layer, the second metal layer and the third metal layer are kept consistent;
first through holes are formed in the first source electrode at equal intervals, second through holes are formed in the second source electrode at equal intervals, and third through holes are formed in the drain electrode at equal intervals; the first through hole, the second through hole and the third through hole are all arranged in the switching area; the first through holes and the second through holes are arranged in a staggered mode with the third through holes and are not overlapped in the horizontal direction.
Furthermore, the first through hole and the second through hole are the same in shape, and are arranged in axial symmetry with the drain electrode as an axis.
Further, a first distance is formed between the adjacent first through holes, and the first distance is larger than the length and the width of the first through holes.
Further, a second space is formed between the third through hole and the first through hole on the drain electrode.
Furthermore, the third through holes and the first through holes are the same in shape, and the distance between every two adjacent third through holes is the same as the distance between every two adjacent first through holes.
Furthermore, the horizontal distances between the drain and the first metal layer and between the drain and the second metal layer are equal and are a third distance.
Further, a fourth distance is vertically formed between the second through hole at the uppermost part of the second source and the uppermost part of the second gate; and a fifth distance is vertically formed between the second through hole at the lowest part of the second source electrode and the lowest part of the second grid electrode.
Further, a sixth distance is vertically formed between a third through hole at the uppermost part of the drain electrode and the uppermost part of the second grid electrode; and a seventh distance is vertically formed between the third through hole at the lowest part of the drain electrode and the lowest part of the second grid electrode.
Further, the overlapping lengths of the third metal layer and the second source electrode, the first metal layer and the first source electrode, and the overlapping lengths of the drain electrode and the second metal layer in the switching region are equal and are an eighth distance.
Further, a vertical distance between the first metal layer and the second metal layer and a vertical distance between the third metal layer and the second metal layer are equal to each other and are a ninth distance.
Compared with the prior art, the invention has the following beneficial effects:
on the premise of not changing the fundamental structure of the MOSFET, the invention can reduce the parasitic capacitance generated by the metal of the source and the drain by staggering the source and the drain through holes, adopting the finger-inserting structure for the metal layer and making the source and the drain through holes into staggering arrangement, thereby improving the characteristics of the radio frequency switch.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a top view of a prior art H-Type MOSFET structure;
FIG. 2 is a top view of another prior art H-Type MOSFET structure;
FIG. 3 is a top view of an H-Type MOSFET structure with improved RF switching characteristics according to the present invention;
in the drawings, the components represented by the respective reference numerals are listed below:
1-second gate, 2-first gate, 5-first metal layer, 6-second metal layer, 7-third metal layer, 8-third via, 9-second via, 10-first via, S1-first source, S2-second source, dis 1-first distance, dis 2-second pitch, dis 3-fourth distance, dis 4-fifth distance, dis 5-sixth distance, dis 6-seventh distance, dis 7-eighth distance, dis 8-ninth distance, dis 9-third distance, DIFF-switching region.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Two prior H-Gate MOSFET structures are shown in fig. 1 and fig. 2, which are both top views, in fig. 1, the Gate, the drain 511, the first source 53 and the second source 54 are all composed of a single finger, reference numeral 52 is polysilicon (Poly-Si) of the Gate G1, the first source 53 and the drain 511 are separated by the first Gate G1, the second source 54 and the drain 511 are separated by the second Gate G2, reference numeral 510 is a via structure of the first source 53, reference numeral 58 is a via structure of the drain 511, and reference numeral 59 is a via structure of the second source 54. In fig. 2, reference numerals M2_ S1 and M2_ S2 are two metal layer connecting lines of a source, and M2_ D1 is a metal layer connecting line of a drain, respectively, and an off-state capacitance between the two sources and the drain includes not only a parasitic capacitance between metal layers but also a parasitic capacitance between vias. The parasitic capacitance between the metal and the through hole between the source and the drain of the existing MOSFET structure is large, which results in a large quality factor FOM, so the off-capacitance Coff is generally large, and the reduction of the off-capacitance Coff is important for improving the radio frequency characteristics such as the isolation degree and the harmonic wave of the radio frequency switch.
In order to overcome the above-mentioned shortcomings of the prior art, the present invention provides a MOSFET structure with improved rf switching performance, which aims to reduce the parasitic capacitance of metal without increasing additional parasitic resistance, so as to improve the rf switching characteristics of the MOSFET.
Referring to fig. 3, a MOSFET structure for improving performance of a radio frequency switch according to the present invention includes a basic MOSFET structure including a first source S1, a drain D1, a second source S2, a first gate 2 disposed between the first source S1 and the drain D1, and a second gate 1 disposed between the second source S2 and the drain D1;
the first source electrode S1, the drain electrode D1 and the second source electrode S2 are respectively provided with an inserting finger-shaped structure which is formed by a first metal layer 5, a second metal layer 6 and a third metal layer 7 and does not have metal layer overlapping in the horizontal direction; the widths and the sizes of the first metal layer 5, the second metal layer 6 and the third metal layer 7 are kept consistent; the lengths may be non-uniform, but are typically made symmetrical to facilitate Foundry; in addition, the size of the through holes should be consistent with the design rule of Foundry, should be aligned, and the specific number is related to the gate length; the design is used for reducing parasitic capacitance caused by metal and through holes under the condition of not increasing parasitic resistance as much as possible; on the premise of not changing the basic structure of the MOSFET, the two structures are redesigned on the basis of the through holes and the metal layers of the drain D and the source S in the prior art, so that the parasitic capacitance generated by the drain D and the source S can be reduced.
First through holes 10 are formed in the first source S1 at equal intervals, second through holes 9 are formed in the second source S2 at equal intervals, and third through holes 8 are formed in the drain D1 at equal intervals; the first through hole 10, the second through hole 9 and the third through hole 8 are all arranged in the switching area DIFF; the first through holes 10 and the second through holes 9 are arranged in a staggered manner with the third through holes 8 and are not overlapped in the horizontal direction; in this embodiment, 16 first through holes 10 are provided, and 15 second through holes 9 are provided.
The first through hole 10 and the second through hole 9 have the same shape, and are axially symmetric about the drain D1.
The polysilicon (Poly-Si) of the drain D1 is disposed at a certain layer, a first distance Dis1 is formed between adjacent first through holes 10, and the first distance Dis1 is greater than the length and width of the first through holes 10.
A second distance Dis2 is formed between the third through hole 8 and the first through hole 10 on the drain D1.
The third through holes 8 and the first through holes 10 have the same shape, and the distance between two adjacent third through holes 8 is the same as the distance between two adjacent first through holes 10.
The horizontal distance between the drain D1 and the first metal layer 5 and the horizontal distance between the drain D and the second metal layer 6 are equal to each other, and are the third distance Dis9.
A fourth distance Dis3 is vertically formed between the second through hole 9 at the uppermost surface of the second source S2 and the uppermost surface of the second gate 1 (i.e., the upper portion of the H gate); a fifth distance Dis4 is vertically formed between the second through hole 9 at the lowest surface of the second source S2 and the lowest portion (i.e., the lower portion of the H gate) of the second gate 1; i.e. the process is repeated.
A sixth distance Dis5 is vertically formed between the third through hole 8 at the uppermost surface of the drain D1 and the uppermost portion (i.e., the upper portion of the H gate) of the second gate 1; a seventh distance Dis6 is vertically formed between the third through hole 8 at the lowest surface of the drain electrode D1 and the lowest portion (i.e., the lower portion of the H gate) of the second gate electrode 1.
The overlapping lengths of the third metal layer 7 and the second source S2, the first metal layer 5 and the first source S1, and the drain D1 and the second metal layer 6 in the switching region DIFF are equal to each other, and are an eighth distance Dis7.
The vertical distance between the first metal layer 5 and the second metal layer 6 and the vertical distance between the third metal layer 7 and the second metal layer 6 are equal to each other, which is the ninth distance Dis8.
In summary, according to the MOSFET structure for improving the radio frequency Switch characteristic of the present invention, under the premise of not changing the basic structure of the MOSFET, the metal layers of the source and the drain are made into the shape of the insert finger, and the through holes of the source and the drain are made into the staggered arrangement, so that the parasitic capacitance generated by the metal of the source and the drain and the through holes can be reduced, thereby improving the characteristic of the radio frequency Switch.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. The utility model provides an improve MOSFET structure of radio frequency switch performance, includes first source (S1), drain electrode (D1), second source (S2), sets up first grid (2) between first source (S1) and drain electrode (D1), sets up the MOSFET basic structure that second grid (1) constitute between second source (S2) and drain electrode (D1), its characterized in that:
the first source electrode (S1), the drain electrode (D1) and the second source electrode (S2) are respectively provided with an inserting finger-shaped structure which is formed by a first metal layer (5), a second metal layer (6) and a third metal layer (7) and has no metal layer overlapping in the horizontal direction; the widths of the first metal layer (5), the second metal layer (6) and the third metal layer (7) are kept consistent;
first through holes (10) are formed in the first source electrode (S1) at equal intervals, second through holes (9) are formed in the second source electrode (S2) at equal intervals, and third through holes (8) are formed in the drain electrode (D1) at equal intervals; the first through hole (10), the second through hole (9) and the third through hole (8) are all arranged in a switching area (DIFF); the first through holes (10) and the second through holes (9) are arranged in a staggered mode with the third through holes (8) and are not overlapped in the horizontal direction.
2. The MOSFET structure for improving the performance of the RF switch of claim 1, wherein the first through hole (10) and the second through hole (9) have the same shape and are axially symmetric about the drain (D1).
3. The MOSFET structure for improving the performance of a radio frequency switch according to claim 2, wherein a first distance (Dis 1) is formed between adjacent first vias (10), and the first distance (Dis 1) is greater than the length and width of the first vias (10).
4. The MOSFET structure for improving the performance of a radio frequency switch according to claim 2, wherein the third via (8) on the drain (D1) and the first via (10) form a second distance (Dis 2).
5. The MOSFET structure of claim 1, wherein the third through holes (8) and the first through holes (10) have the same shape, and the distance between two adjacent third through holes (8) is the same as the distance between two adjacent first through holes (10).
6. The MOSFET structure of claim 1, wherein the drain (D1) is horizontally spaced from the first and second metal layers (5, 6) by a third distance (Dis 9).
7. The MOSFET structure of claim 1, wherein a fourth distance (Dis 3) is vertically formed between the second via (9) at the uppermost of the second source (S2) and the uppermost of the second gate (1); and a fifth distance (Dis 4) is vertically formed between the second through hole (9) at the lowest part of the second source electrode (S2) and the lowest part of the second grid electrode (1).
8. The MOSFET structure of claim 1, wherein a sixth distance (Dis 5) is vertically formed between the uppermost third via (8) of the drain (D1) and the uppermost portion of the second gate (1); and a seventh distance (Dis 6) is vertically formed between the third through hole (8) at the lowest part of the drain electrode (D1) and the lowest part of the second grid electrode (1).
9. A MOSFET structure for improving the performance of a radio frequency switch according to claim 1, wherein the third metal layer (7) is equal to the second source (S2), the first metal layer (5) is equal to the first source (S1), and the drain (D1) is equal to the second metal layer (6) in the overlapping length of the switching region (DIFF), which is an eighth distance (Dis 7).
10. The MOSFET structure of claim 9, wherein the vertical distance between the first metal layer (5) and the second metal layer (6) and the vertical distance between the third metal layer (7) and the second metal layer (6) are equal to a ninth distance (Dis 8).
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| JP2004241448A (en) * | 2003-02-04 | 2004-08-26 | Internatl Business Mach Corp <Ibm> | Asymmetrical mosfet layout for large current high-speed operation |
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| CN108110004A (en) * | 2017-11-30 | 2018-06-01 | 上海华虹宏力半导体制造有限公司 | RF switching devices |
| US20200194366A1 (en) * | 2017-06-12 | 2020-06-18 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency transistor for improving radio frequency switch performance, chip and mobile terminal |
| CN114725197A (en) * | 2020-12-21 | 2022-07-08 | 恩智浦有限公司 | Metal oxide semiconductor device and method of construction thereof |
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2022
- 2022-10-11 CN CN202211240902.3A patent/CN115939211A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004241448A (en) * | 2003-02-04 | 2004-08-26 | Internatl Business Mach Corp <Ibm> | Asymmetrical mosfet layout for large current high-speed operation |
| CN102246305A (en) * | 2008-12-22 | 2011-11-16 | 剑桥硅无线电通信有限公司 | An improved RF CMOS transistor design |
| CN106960879A (en) * | 2017-05-23 | 2017-07-18 | 上海华虹宏力半导体制造有限公司 | It is a kind of to improve the MOSFET structure of RF switch characteristic |
| US20200194366A1 (en) * | 2017-06-12 | 2020-06-18 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency transistor for improving radio frequency switch performance, chip and mobile terminal |
| CN108110004A (en) * | 2017-11-30 | 2018-06-01 | 上海华虹宏力半导体制造有限公司 | RF switching devices |
| CN114725197A (en) * | 2020-12-21 | 2022-07-08 | 恩智浦有限公司 | Metal oxide semiconductor device and method of construction thereof |
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