CN115938914A - Method for forming semiconductor thin film - Google Patents

Abstract

The invention provides a method for forming a semiconductor film, which is characterized in that before a high-SOURCERF HebaseHDP process is carried out on a target silicon wafer to be formed with the semiconductor film, a low-SOURCERF non-Hebase HDP process is carried out on a preset batch of silicon wafers serving as monitoring wafers, so that the aim of avoiding the generation of aluminum element particle pollutants due to the generation of electric arcs in an aluminum process cavity can be realized by utilizing the low-SOURCERF non-HebaseHDP process, and meanwhile, the aim of gradually restoring the range of the process cavity to the stable cavity atmosphere required by the high-SOURCERF HebaseHDP process of a subsequent monitoring wafer or target wafer is realized by combining a mode of gradually increasing the bias power of the first HDP process under the condition of ensuring that the process cavity does not generate the electric arcs.

Description

Method for forming semiconductor thin film

Technical Field

The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor film.

Background

The HDP process is one of the common processes in the manufacture of semiconductor integrated circuits, has the characteristics of etching while depositing, excellent hole filling performance, and capability of filling gaps with a large depth-to-width ratio at a relatively low temperature, and the film deposited by the HDP process has good quality, the wet etching rate of the film without annealing treatment is close to that of thermal silicon oxide, the impurity content is low, and the working range and the stability of a device are favorably ensured. Therefore, the conventional HDP process is generally used to fill the gap with high aspect ratio, such as the gap of inter-metal dielectric (PMD), pre-metal dielectric (IMD), shallow Trench Isolation (STI) can be filled with the silicon dioxide layer formed by the HDP process.

However, with the continuous development of semiconductor technology, after a process with a large aspect ratio is performed, an HDP process (referred to as a "HebaseHDP process" for short) using helium as a reactive gas is widely used, but the HebaseHDP process requires a high-power radio frequency source (referred to as a "high SOURCERF" for short) to meet the filling requirement, and in the actual mass production process, after the process chamber is maintained, the HebaseHDP process operating the high SOURCERF directly causes an arc phenomenon of abnormal discharge on the surface of the process chamber made of aluminum, and further forms a particle contamination defect on the surface of the silicon wafer, as shown in fig. 1a or fig. 1b, in which the specific composition is Si, O, and AL elements like a comet, and the excessive AL elements are obviously bombarded from the surface of the process chamber to the surface of the silicon wafer.

Disclosure of Invention

The invention aims to provide a method for forming a semiconductor film, which aims to solve the problem that in the prior art, the surface of a process cavity made of an aluminum material is subjected to electric arc to cause particulate pollution on the surface of a silicon wafer due to the fact that a high SOURCERF HebaseHDP process is directly carried out on the silicon wafer arranged in the process cavity.

In order to solve the above technical problems, the present invention provides a method for forming a semiconductor thin film, which is applied to a high density plasma HDP process, wherein the HDP process can use an aluminum process chamber; specifically, the forming method may include the steps of:

providing a preset number of silicon wafers serving as monitoring wafers, and placing the monitoring wafers on a bearing table in the process chamber;

carrying out a first HDP process with controllable bias power on the monitoring pieces so as to form a first semiconductor film on the surface of each monitoring piece in sequence under the condition of ensuring that the process cavity does not generate an arc phenomenon;

and when the number of monitoring sheets on which the first semiconductor film is formed on the surface is detected to reach a preset number, carrying out a second HDP process on the monitoring sheets, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gases of the second HDP process and the first HDP process are also different.

Further, the step of performing a first HDP process with controllable bias power on the monitor wafer may include: and carrying out an HDP (high density plasma) process on the monitoring chip, wherein the bias power of the radio frequency source is gradually increased from low to high.

Further, the controllable range of the bias power in the first HDP process may specifically be: 0 to 3000W.

Further, the step of performing the HDP process in which the bias power of the rf source is gradually increased from low to high on the monitor wafer may include:

dividing a preset number of silicon wafers into N groups of monitoring wafers, wherein N is more than or equal to 2;

and starting from the first group of monitoring pieces, sequentially increasing the bias power of the HDP process executed by each group of monitoring pieces according to a preset step length so that each group of monitoring pieces can carry out the first HDP process under the same bias power.

Further, the preset step length may specifically be: 500-1000W, and the step size can be 500W and then 1000W.

Further, the reaction gas of the first HDP process may be at least one of oxygen, argon, and silane.

Further, the reaction gas of the second HDP process may be helium.

Further, the number of the monitoring sheets on the detection surface on which the first semiconductor thin film is formed may be within a predetermined number range: 150 to 250PCS.

Further, before the monitoring wafer is placed on the carrying table in the process chamber, the forming method may further include performing an initial maintenance process on the process chamber.

Further, the initial maintenance process may include at least one cleaning process performed on the inner wall of the process chamber.

Further, after the performing of the first HDP process with controllable bias power on the monitoring wafer and before performing the second HDP process on the monitoring wafer, the forming method may further include:

and carrying out a first HDP process with unchanged bias power or a third HDP process with unchanged bias power on the monitoring piece again, wherein the reaction gas of the third HDP process is different from that of the second HDP process, and the bias power of the third HDP process is the same as that of the second HDP process.

Further, the reaction gas of the third HDP process may be at least one of silane or oxygen.

Further, the range of the aspect ratio of the trench filled by the first HDP process may be less than 1.8.

Further, the aspect ratio of the trench filled by the second HDP process may be in a range of 2.5 to 3.5.

Further, the aspect ratio of the trench filled by the third HDP process may be in a range of 1.8 to 2.5.

Further, after the step of performing the HDP process on the monitor wafer for the second time, the method for forming the semiconductor thin film provided by the present invention may further include the steps of:

detecting whether particle pollutants exist on the surface of a second semiconductor film formed on the surface of the monitoring sheet after the second HDP process is executed;

if not, replacing the monitoring wafer with a target wafer, and carrying out the second HDP process on the target wafer.

Compared with the prior art, the technical scheme provided by the invention has at least one of the following beneficial effects:

the invention provides a method for forming a semiconductor film, which is characterized in that before a high-SOURCERF HebaseHDP process is carried out on a target silicon wafer to be formed with the semiconductor film, a low-SOURCERF non-Hebase HDP process (a first HDP process) is carried out on a preset batch of silicon wafers serving as monitoring sheets, so that the aim of avoiding the generation of aluminum element particle pollutants due to electric arc in a process cavity of an aluminum material can be realized by utilizing the low-SOURCERF non-HebaseHDP process, and simultaneously, the aim of gradually restoring the range of the process cavity to be suitable for a subsequent monitoring sheet or the target wafer to carry out a stable cavity atmosphere required by the high-SOURCERF HebaseHDP process (a second HDP process) under the condition of ensuring that the process cavity does not generate the electric arc phenomenon is fulfilled by combining the mode of gradually raising the bias power of the first HDP process, namely, the problem that the surface of the process cavity is polluted by the electric arc in the process of the HebaseHDP process cavity of the high-SOURCERF process directly carried out on the silicon wafers arranged in the process cavity of the aluminum material is solved.

Drawings

FIGS. 1a to 1b are schematic cross-sectional views illustrating an arc generated on a surface of a process chamber and a particle contamination defect existing on a surface of a silicon wafer when a semiconductor thin film is formed by a high SOUR CERF based HDP process in the prior art according to an embodiment of the present invention;

FIG. 2 is a schematic flow chart illustrating a method for forming a semiconductor film according to an embodiment of the present invention;

fig. 3 is a schematic flow chart of a method for forming a semiconductor film according to another embodiment of the present invention.

Detailed Description

As described in the background art, currently, with the continuous development of semiconductor technology, after a process with a large aspect ratio is performed, an HDP process (referred to as a "HebaseHDP process" for short) using helium as a reactive gas is widely used, but the HebaseHDP process needs a high-power radio frequency source (referred to as a "high SOURCERF" for short) to meet the filling requirement, and in the actual mass production process, after the process chamber is maintained, the HebaseHDP process operating the high SOURCERF directly causes an arc phenomenon of abnormal discharge on the surface of the process chamber made of aluminum, and further forms a particle contamination defect like a comet on the surface of the silicon wafer, wherein the particle contamination defect is shown in fig. 1a or fig. 1b, and the excessive AL element is obviously bombarded from the surface of the process chamber to the surface of the silicon wafer.

Therefore, the invention aims to provide a method for forming a semiconductor film, which aims to solve the problem that in the prior art, the surface of a process cavity made of an aluminum material is subjected to electric arc to cause particle pollution on the surface of a silicon wafer due to the fact that the high SOURCERF HebaseHDP process is directly carried out on the silicon wafer arranged in the process cavity.

The following describes a method for forming a semiconductor thin film according to the present invention in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below.

As used in this application and the appended claims, the terms "a," "an," "the," and/or "the" are not intended to be inclusive in the singular, but rather are intended to be inclusive in the plural unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that steps and elements are included which are explicitly identified, that the steps and elements do not form an exclusive list, and that a method or apparatus may include other steps or elements. In describing the embodiments of the present invention in detail, the cross-sectional views illustrating the structure of the device are not enlarged partially in a general scale for convenience of illustration, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.

It should be noted that, in practical applications, for different aspect ratios of the trench (via) to be filled, HDP processes using different reaction gases and bias powers/source powers are required, and in order to clearly and uniformly express multiple different HDP processes in the embodiments of the present invention, the low SOURCERF non-HebaseHDP process is referred to as a first HDP process, the high SOURCERF HebaseHDP process is referred to as a second HDP process, and the high SOURCERF non-HebaseHDP process is referred to as a third HDP process.

Wherein, the range of the aspect ratio of the trench filled by the first HDP process may be less than 1.8, for example, 1.7, 1.6, 1.5, etc.; the aspect ratio of the trench filled by the second HDP process may range from 2.5 to 3.5, that is, may specifically be 2.5, 2.6, 2.7, 2.8, 2.9, 3.0, 3.1, 3.2, 3.3, 3.4, and 3.5; the aspect ratio of the trench filled by the third HDP process may be in a range of 1.8 to 2.5, that is, specifically, may be 1.8, 1.9, 2.0, 2.1, 2.2, 2.3, 2.4, and 2.5.

In summary, the general inventive concept of the present invention is: the non-HebaseHDP process (first HDP process) with different bias power and gradually increased bias power can be performed on a plurality of groups of monitoring wafers, so that the range of the process cavity is gradually restored to a stable cavity atmosphere suitable for a subsequent monitoring wafer or a HebaseHDP process (second HDP process) of a target wafer for high SOURCERF under the condition that the process cavity is not subjected to an arc phenomenon, and then the HebaseHDP process wafer is subjected to the target wafer. Based on this, the following example one can be obtained.

The first embodiment is as follows:

specifically, referring to fig. 2, fig. 2 is a schematic flow chart of a method for forming a semiconductor thin film according to an embodiment of the present invention, as shown in fig. 2, the method for forming a semiconductor thin film according to the present invention at least includes the following steps:

step S201, providing a predetermined number of silicon wafers as monitoring wafers, and placing the monitoring wafers on a susceptor in the process chamber.

Step S202, a first HDP process with controllable bias power is carried out on the monitoring plates, so that a first semiconductor film is sequentially formed on the surface of each monitoring plate under the condition that the process cavity is ensured not to generate an arc phenomenon.

Step S203, when the number of the monitoring pieces on which the first semiconductor film is formed on the surface is detected to reach a preset number, carrying out a second HDP process on the monitoring pieces, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

Specifically, in step S201, a silicon wafer (wafer or semiconductor) on which a semiconductor thin film is formed by a HebaseHDP process with high SOURCERF may be referred to as a target wafer, and before the semiconductor process is performed, a plurality of test silicon wafers of the first HDP process and the second HDP process, which are performed to adjust a cavity atmosphere of an aluminum process cavity, are referred to as monitor wafers. Specifically, the plurality of silicon wafers may be divided into groups, so as to form N groups of monitoring wafers, each group of monitoring wafers including at least one silicon wafer, where N is greater than or equal to 2.

As an example, the provided preset number of silicon wafers may be divided according to the wafer lot, and then further divided in a manner that each group of monitoring slices includes at least one silicon wafer included in the wafer lot, so as to obtain the N groups of monitoring slices. Each group of monitoring slices may be composed of lot silicon wafers in the same or different batches, for example, assuming that the value of N is 4 (4 groups of monitoring slices), one wafer lot may be set to include 12 silicon wafers (of course, other values may also be set, such as 2, 4, 6, 8, 10, etc.), and the 4 groups of monitoring slices may respectively include silicon wafers included in 6 wafer lots lot. Of course, in other embodiments, the 4 sets of monitoring chips may include other silicon chips with the same number, or may include silicon chips with different numbers, which is not limited in this invention.

It is understood that the silicon wafer or the target wafer is a carrier for forming the semiconductor thin film, and may be, for example, silicon, germanium, silicon carbide, or the like, or may be silicon-on-insulator (SOI) or germanium-on-insulator (GOI), or may be other materials, such as a III-V compound such as gallium arsenide.

It should be noted that, before the step S100 of forming the semiconductor thin film by using the HDP process provided by the present invention, an initial maintenance process may be performed on the process chamber used by the HDP process. For example, the initial maintenance process may specifically include performing at least one cleaning process on an inner wall of the process chamber. For example, the inner wall of the process chamber made of aluminum is subjected to wet cleaning for a plurality of times, or a chamber protective film is formed on the inner wall of the process chamber made of aluminum before or after the step of performing wet cleaning for a plurality of times on the inner wall of the process chamber made of aluminum, and other steps are used for maintaining the process chamber made of HDP.

Specifically, in step S202, the controllable range of the bias power in the first HDP process is as follows: 0 to 3000W, that is, it may be specifically gradually increased from 0W to 3000W. The reaction gas of the first HDP process is at least one of oxygen, argon and argon.

As an example, a preset number of silicon wafers may be first divided into N groups of monitoring wafers, where N is greater than or equal to 2, for example, the silicon wafers may be divided into 2 groups, 3 groups, 4 groups, and the like; then, starting from the first group of monitor slices, the bias power of the HDP process executed by each group of monitor slices is sequentially increased according to a preset step length, so that each group of monitor slices performs the first HDP process under a bias power corresponding to each group of monitor slices. Wherein the preset step length is as follows: 500-1000W, namely, starting from the first group of monitoring slices, the bias power of the multiple groups of monitoring slices is gradually increased by the increasing amplitude of 500W.

Specifically, after the initial maintenance of the process chamber made of the aluminum material is performed, the preset number of silicon wafers may be divided into 4 groups (refer to the embodiment corresponding to step S201 in a grouping manner), then, after the first group of monitoring wafers are placed on the load-bearing table in the process chamber, the bias power biaspower of the radio frequency power supply for exciting the introduced reaction gas to ionize into plasma in the process chamber is adjusted to 0W, and the non-HebaseHDP process in which the reaction gas is oxygen, argon, or silane is performed on the first group of monitoring wafers; and then, after a second group of monitoring chips are placed on a bearing table in the process chamber, the bias power biaspower of the radio frequency power supply is increased to 500W, the non-HebaseHDP process is executed, and the rest is repeated until the end condition of the test is reached, so that the first HDP process with the controllable bias power biaspower can be ended. For example, the bias power biaspower corresponding to the monitoring slices of the subsequent different groups may be sequentially increased to 1500W and 2500W.

It should be noted that the inventive concept of the present invention is to solve the problem that the cavity material of the process cavity may cause particle contamination and silicon wafer contamination due to abnormal discharge of the process cavity when the high SOURCERF HebaseHDP process is performed, because the bias power or source power of the process is too high, and the embodiment of the present invention only exemplarily shows the problem of aluminum element/particle contamination generated when the process cavity is an aluminum process cavity, and in other embodiments, the present invention may also solve the problem of particle contamination of other elements generated when the process cavity is an aluminum process cavity.

Specifically, in step S203, the reaction gas of the second HDP process is helium, and the range of the preset number of monitoring sheets on the detection surface on which the first semiconductor film is formed may be: 150 to 250PCS, that is, 150PCS, 160PCS, 170PCS, 180PC S, 190PCS, 200PCS, 210PCS, 220PCS, 230PCS, 240PCS and 250PCS, and preferably, the preset number is 200PCS. Of course, the preset number may be other values, such as 25PCS, 30PCS, 50PCS, and so on.

Specifically, when the plurality of sets of monitor wafers are sequentially subjected to a non-HebaseH DP process (first HDP process) with increased bias power, it is necessary to periodically detect whether a process chamber atmosphere capable of performing a Hebas eHDP process (second HDP process) is reached, and perform a HebaseHDP process with high SOURCERF on the monitor wafer or the target wafer when the process chamber atmosphere meets the requirement, and then detect whether a semiconductor thin film formed by the HebaseHDP process with high SOURCERF meets the design requirement.

As an example, the present invention provides a specific way to specifically determine whether the process chamber atmosphere of the Hebase HDP process (the second HDP process) is reached, that is: and detecting whether particle pollutants exist on the surface of the second semiconductor film formed on the surface of the monitoring piece after the second HDP process is executed.

If not, step S204 may be executed to replace the monitor wafer with a target wafer, and the second HDP process is performed on the target wafer, so as to finally execute the HebaseHDP process with high SOURCE RF on the target wafer.

In an optional scheme, it may also be determined whether the process chamber reaches a process chamber atmosphere capable of performing a HebaseHDP process (a second HDP process) by detecting other parameters, for example, it may also be determined whether a thickness of a second semiconductor film formed on the surface of the monitor wafer after the second HDP process is performed reaches a design requirement, or it may also be determined whether a film uniformity of the second semiconductor film formed on the surface of the monitor wafer after the second HDP process is performed is formed.

As can be seen from the first embodiment and fig. 2, the first HDP process with gradually increased bias power is performed on a predetermined number of silicon wafers (monitor wafers) placed in the process chamber made of aluminum, then the second HDP process with high SOURCERF is performed on the monitor wafers directly, and then the second HDP process with high SOURCERF is performed on the target wafers in the main operation. In other embodiments of the present invention, after the first HDP process with gradually increasing bias power is performed on a predetermined number of silicon wafers (monitor wafers) placed in the process chamber made of aluminum material, the first HDP process with constant bias power or the third HDP process with constant bias power may be performed on the monitor wafers again, and then the HebaseHDP process with high SOURCERF is performed on the target wafers in the formal operation. Based on this, the following example two was obtained.

Example two:

specifically, referring to fig. 3, fig. 3 is a schematic flow chart of a method for forming a semiconductor thin film according to another embodiment of the present invention, as shown in fig. 3, the method for forming a semiconductor thin film according to the present invention at least includes the following steps:

step S301, providing a preset number of silicon wafers as monitoring wafers, and placing the monitoring wafers on a bearing table in the process chamber.

Step S302, performing a first HDP process with controllable bias power on the monitoring plates to sequentially form a first semiconductor film on the surface of each monitoring plate under the condition that it is ensured that no arc occurs in the process chamber.

Step S303, carrying out a first HDP process with invariable bias power or a third HDP process with invariable bias power on the monitoring sheet again; the third HDP process and the second HDP process are different in reaction gas, the bias power of the third HDP process is the same as that of the second HDP process, and the reaction gas of the third HDP process is at least one of silane or oxygen.

Step S304, when detecting that the number of monitor slices after the HDP process of step S303 is completed reaches a preset number, performing a second HDP process on the monitor slices, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the second HDP process is different from the first HDP process in terms of reaction gas.

It should be noted that the difference between the first embodiment and the second embodiment is: in the second embodiment, before performing the high SOURCERF HebaseHDP process, i.e., the second HDP process, on the monitoring wafer, a low SOURCERF non-He baseHDP process with unchanged bias power or a high SOURCERF non-HebaseHDP process with unchanged bias power is added, and other processes are the same as the first embodiment, for example, before performing the first HDP process with controllable bias power on the monitoring wafer in step S302, an initial maintenance process may be performed on the process chamber used in the HDP process, i.e., the inner wall of the process chamber made of aluminum material may be subjected to multiple wet cleaning processes, or before or after the step of performing multiple wet cleaning processes on the inner wall of the process chamber made of aluminum material, a chamber protective film may be formed on the inner wall of the process chamber made of aluminum material, and other steps for maintaining the process chamber made of HDP process.

It is to be understood that the number of monitor slices detected in step S304 after the HDP process of step S303 is completed reaches a preset number, which may also be set to 150 to 250PCS, that is, 150PCS, 160PCS, 170PCS, 180PCS, 190PCS, 200PCS, 210PCS, 220PCS, 230PCS, 240PCS, and 250PCS, preferably, the preset number is 200PCS. Of course, the preset number may also be other values, and the specific setting may be determined according to the actual situation, and the present invention is not limited specifically.

In summary, the present invention provides a method for forming a semiconductor thin film, which comprises, before performing a high SOURCERF HebaseHDP process on a target silicon wafer to be formed with a semiconductor thin film, performing a low SOURCERF non-HebaseHDP process (first HDP process) in which bias power is gradually changed on a preset batch of silicon wafers serving as monitoring wafers, so as to achieve the purpose of avoiding generation of aluminum particle pollutants due to arcing in a process chamber made of an aluminum material by using the low SOURCERF non-HebaseHDP process, and simultaneously achieving the purpose of gradually restoring the range of the process chamber to a stable chamber atmosphere required by the high SOURCERF HebaseHDP process (second HDP process) for a subsequent monitoring wafer or target wafer under the condition of ensuring that no arcing occurs in the process chamber, that a problem of surface contamination of the silicon wafer due to arcing in the prior art is solved.

It should be noted that, in the embodiment of the present invention provided by the present invention, an electronic device is further provided, which includes a processor, a communication interface, a memory and a communication bus, where the processor, the communication interface, the memory and the communication bus complete communication therebetween, and the memory is used for storing a computer program; the processor is used for realizing the method for forming the semiconductor film provided by the embodiment of the invention when executing the program stored in the memory.

Specifically, the method for forming a semiconductor film provided by the invention can be specifically applied to a High Density Plasma (HDP) process, wherein the HDP process adopts an aluminum process cavity, and the method for forming the semiconductor film comprises the following steps:

providing a preset number of silicon wafers serving as monitoring wafers, and placing the monitoring wafers on a bearing table in the process chamber;

carrying out a first HDP process with controllable bias power on the monitoring pieces so as to form a first semiconductor film on the surface of each monitoring piece in sequence under the condition of ensuring that the process cavity does not generate an arc phenomenon;

and when the number of monitoring sheets on which the first semiconductor film is formed on the surface is detected to reach a preset number, carrying out a second HDP process on the monitoring sheets, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

In addition, other implementation manners of the method for forming the semiconductor thin film, which are realized by the processor executing the program stored in the memory, are the same as the implementation manners mentioned in the foregoing method embodiment portions, and are not described again here.

In yet another embodiment of the present invention, a computer-readable storage medium is provided, in which instructions are stored, and when the computer-readable storage medium is run on a computer, the computer is caused to execute a method for forming a semiconductor thin film described in any one of the above embodiments.

In the above embodiments, the implementation may be wholly or partially realized by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loaded and executed on a computer, cause the processes or functions described in accordance with the embodiments of the invention to occur, in whole or in part. The computer may be a general purpose computer, a special purpose computer, a network of computers, or other programmable device. The computer instructions may be stored in a computer readable storage medium or transmitted from one computer readable storage medium to another, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by wire (e.g., coaxial cable, fiber optic, digital subscriber line) or wirelessly (e.g., infrared, wireless, microwave, etc.). The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device, such as a server, a data center, etc., that incorporates one or more of the available media. The usable medium may be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium, a semiconductor medium (e.g., solid state disk), or the like.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising a," "8230," "8230," or "comprising" does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.

All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the apparatus, the electronic device, and the computer-readable storage medium embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference may be made to the partial description of the method embodiments for relevant points.

The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (13)

1. A method for forming a semiconductor film is applied to a high-density plasma (HDP) process, wherein the HDP process adopts a process cavity made of an aluminum material, and the method comprises the following steps:

providing a preset number of silicon wafers serving as monitoring wafers, and placing the monitoring wafers on a bearing table in the process chamber;

carrying out a first HDP process with controllable bias power on the monitoring pieces so as to form a first semiconductor film on the surface of each monitoring piece in sequence under the condition of ensuring that the process cavity does not generate an arc phenomenon;

and when the number of monitoring sheets on which the first semiconductor film is formed on the surface is detected to reach a preset number, carrying out a second HDP process on the monitoring sheets, wherein the bias power of the second HDP process is higher than that of the first HDP process, and the reaction gas of the second HDP process is different from that of the first HDP process.

2. The method for forming a semiconductor film according to claim 1, wherein the step of performing a first HDP process with controllable bias power on the monitor wafer comprises: and carrying out an HDP (high density plasma) process on the monitoring chip, wherein the bias power of the radio frequency source is gradually increased from low to high.

3. The method for forming a semiconductor film according to claim 2, wherein the controllable range of the bias power in the first HDP process is: 0 to 3000W.

4. The method for forming a semiconductor film according to claim 3, wherein the step of performing an HDP process in which the bias power of the RF source is gradually increased from low to high on the monitor wafer comprises:

dividing a preset number of silicon wafers into N groups of monitoring wafers, wherein N is more than or equal to 2;

and starting from the first group of monitoring pieces, sequentially increasing the bias power of the HDP process executed by each group of monitoring pieces according to a preset step length so as to enable each group of monitoring pieces to carry out the first HDP process under the corresponding bias power.

5. The method for forming a semiconductor film according to claim 4, wherein the predetermined step size is: 500-1000W.

6. The method according to claim 1, wherein the reaction gas of the first HDP process is at least one of oxygen, argon, and silane.

7. The method according to claim 1, wherein the reaction gas of the second HDP process is helium.

8. The method for forming a semiconductor film according to claim 1, wherein the number of monitor pieces forming the first semiconductor film on the inspection surface reaches a predetermined number range of: 150 to 250PCS.

9. The method of claim 1, wherein prior to placing the monitor wafer on a susceptor in the process chamber, the method further comprises performing an initial maintenance process on the process chamber.

10. The method of claim 9, wherein the initial maintenance process comprises performing at least one cleaning process on an inner wall of the process chamber.

11. The method of forming a semiconductor film according to claim 1, wherein after performing a first HDP process with controllable bias power on the monitor wafer and before performing a second HDP process on the monitor wafer, the method further comprises:

and carrying out a first HDP process with unchanged bias power or a third HDP process with unchanged bias power on the monitoring piece again, wherein the reaction gas of the third HDP process is different from that of the second HDP process, and the bias power of the third HDP process is the same as that of the second HDP process.

12. The method according to claim 11, wherein the reaction gas of the third HDP process is at least one of silane or oxygen.

13. The method for forming a semiconductor film according to claim 12, wherein after the step of performing the HDP process for the second time on the monitor wafer, the method further comprises:

detecting whether particle pollutants exist on the surface of a second semiconductor film formed on the surface of the monitoring sheet after the second HDP process is executed;

if not, replacing the monitoring wafer with a target wafer, and carrying out the second HDP process on the target wafer.

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