CN115931897A - Wafer surface inspection device and inspection method - Google Patents

Wafer surface inspection device and inspection method Download PDF

Info

Publication number
CN115931897A
CN115931897A CN202211609434.2A CN202211609434A CN115931897A CN 115931897 A CN115931897 A CN 115931897A CN 202211609434 A CN202211609434 A CN 202211609434A CN 115931897 A CN115931897 A CN 115931897A
Authority
CN
China
Prior art keywords
wafer
distribution
phase
industrial camera
vertical direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211609434.2A
Other languages
Chinese (zh)
Inventor
徐新华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Semiconductor Wafer Co Ltd
Original Assignee
Hangzhou Semiconductor Wafer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hangzhou Semiconductor Wafer Co Ltd filed Critical Hangzhou Semiconductor Wafer Co Ltd
Priority to CN202211609434.2A priority Critical patent/CN115931897A/en
Publication of CN115931897A publication Critical patent/CN115931897A/en
Pending legal-status Critical Current

Links

Images

Abstract

The invention discloses a wafer surface inspection method, which comprises the following steps: projecting a light beam to the surface of the wafer along a vertical direction by using a laser source; shooting a wafer surface fringe reflection light pattern by an industrial camera when the surface of the wafer is projected by a laser source; when an industrial camera is used for shooting the fringe reflection light pattern on the surface of the wafer, the industrial camera shoots at least 5 groups of phase points relative to the surface of the wafer, the control module is used for extracting the phase distribution of the fringe reflection light pattern shot on the surface of the wafer, and the fringe reflection continuous phase distribution is obtained through expansion; and calculating the gradient distribution of the horizontal direction and the vertical direction of the surface of the wafer based on the fringe reflection continuous phase distribution, wherein the acquired gradient distribution of the horizontal direction and the vertical direction of the surface of the wafer indicates that the surface of the wafer has defects such as scratches or stains under the condition that the sudden increase or the sudden decrease occurs, so that whether the surface of the wafer has the defects or not is quickly determined.

Description

Wafer surface inspection device and inspection method
Technical Field
The invention relates to the technical field of wafer detection, in particular to a wafer surface inspection device and an inspection method.
Background
In the preparation of a wafer using silicon as a raw material, the wafer is generally processed through the processes of doping, cutting, grinding, etching, cleaning, etc., and the processed wafer is widely used in computers and electronic devices of integrated circuits, and the quality of the wafer directly affects the electrical characteristics of semiconductor devices.
In the wafer production process, parameters need to be adjusted very accurately in each process processing so as to ensure the precision of wafer processing, wafers are processed in a plurality of processes, quality defects of the processed wafers are inevitably caused, after each process processing is completed, the surfaces of the wafers need to be inspected so as to ensure that the surfaces of the wafers have no defects such as scratches and stains, the surfaces of the wafers are inspected by manually screening defective wafers and irradiating the surfaces of the wafers with light so as to inspect the surfaces, the surfaces of the wafers are manually inspected by self subjective consciousness judgment, the screening error and leakage rate of the defective wafers is high, and the inspection efficiency of wafer production is seriously influenced.
In the prior art, for example, patent No. CN108538740a, "inspection method, inspection apparatus and laser processing apparatus for semiconductor ingot", discloses that by irradiating a single crystal ingot processing surface with light, analyzing a shot image for defects by the inspection apparatus, comparing the formed shot image with a predetermined condition to determine the state of the modified layer and the crack, the action of inspecting the single crystal ingot processing surface can be quickly shot, and more specifically, when a defect is detected in a device region, a gray scale change detection and an abnormal grain detection are performed in the device region, thereby identifying a device having a surface defect.
Disclosure of Invention
The invention aims to provide a wafer surface inspection device and an inspection method thereof, which are used for solving the problem of poor wafer surface inspection effect caused by gray value comparison and analysis by using a shot image.
The purpose of the invention can be realized by the following technical scheme:
a wafer surface inspection method comprises the following steps:
s0, projecting a light beam to the surface of the wafer along the vertical direction by using a laser source;
s1, shooting a stripe reflection light pattern on the surface of a wafer by using an industrial camera when the surface of the wafer is projected by using the laser source;
s2, when the industrial camera is used for shooting the fringe reflection light pattern on the surface of the wafer, the industrial camera shoots at least 5 groups of phase points relative to the surface of the wafer, the control module is used for extracting the phase distribution of the fringe reflection light pattern shot on the surface of the wafer, and the fringe reflection continuous phase distribution is obtained through expansion;
and S3, calculating the gradient distribution of the wafer surface in the horizontal direction and the vertical direction based on the fringe reflection continuous phase distribution, and determining whether the surface of the wafer has defects.
As a further scheme of the invention: the shooting phase points of the industrial camera in the step S2 are T =1,2,3,4,5, a. W = -arctan
Figure 100002_DEST_PATH_IMAGE002
Wherein, in the step (A),
Figure 100002_DEST_PATH_IMAGE004
for capturing the value of the light intensity at the phase point>
Figure 100002_DEST_PATH_IMAGE006
Phase shift steps for the acquisition phase points.
As a further scheme of the invention: according to the shooting phase point distribution extracted in the step 2, spreading adjacent shooting phase point distribution into
Figure 100002_DEST_PATH_IMAGE008
,/>
Figure 138114DEST_PATH_IMAGE008
Calculated by the following formula: />
Figure 292015DEST_PATH_IMAGE008
=/>
Figure 100002_DEST_PATH_IMAGE010
+2π×round/>
Figure 100002_DEST_PATH_IMAGE012
Wherein, in the step (A),
Figure 502416DEST_PATH_IMAGE010
for the recording phase point distribution adjacent to the t phase point, ->
Figure 100002_DEST_PATH_IMAGE014
And shooting phase point distribution for the t phase points, thereby obtaining fringe reflection continuous phase distribution.
As a further scheme of the invention: the fringe reflection continuous phase distribution in the step S2 is calculated as gradient distribution in the x horizontal direction of the surface of the wafer
Figure 100002_DEST_PATH_IMAGE016
，/>
Figure 245113DEST_PATH_IMAGE016
Calculated by the following formula: />
Figure 922082DEST_PATH_IMAGE016
=2π/>
Figure 100002_DEST_PATH_IMAGE018
Wherein alpha is an included angle between a shooting optical axis of the industrial camera and the x horizontal direction; the gradient profile in the vertical direction of the wafer surface y is calculated as->
Figure 100002_DEST_PATH_IMAGE020
，
Figure 15809DEST_PATH_IMAGE020
Calculated by the following formula: />
Figure 639688DEST_PATH_IMAGE020
=2π/>
Figure 100002_DEST_PATH_IMAGE022
And determining whether the surface of the wafer has defects or not according to the gradient distribution in the horizontal direction and the vertical direction of the surface of the wafer.
As a further scheme of the invention: and the fringe reflection continuous phase distribution in the step S2 and the gradient distribution in the step S3 are displayed by a display screen.
A wafer surface inspection apparatus, comprising:
a laser source for projecting a beam of light in a vertical direction toward a surface of a wafer;
an industrial camera for capturing the wafer surface fringe reflection light patterns at different phase points;
the control module is used for extracting and processing the phase distribution of the shot fringe reflection light pattern on the surface of the wafer, expanding and acquiring fringe reflection continuous phase distribution, calculating the gradient distribution in the horizontal direction and the vertical direction of the surface of the wafer based on the fringe reflection continuous phase distribution, and determining whether the surface of the wafer has defects;
and the display screen is used for displaying the fringe reflection continuous phase distribution and the gradient distribution.
As a further scheme of the invention: the shooting phase point of the industrial camera is T =1,2,3,4,5.
As a further scheme of the invention: the control module extracts the distribution of the shooting phase points of the reflection light pattern of the shooting fringe on the surface of the wafer as W, and the W is calculated by the following formula: w = -arctan
Figure 440154DEST_PATH_IMAGE002
In which>
Figure 881500DEST_PATH_IMAGE004
For capturing the value of the light intensity at the phase point>
Figure 275572DEST_PATH_IMAGE006
Phase shift steps for the acquisition phase points.
As a further scheme of the invention: the control module spreads the distribution of adjacent shooting phase points into
Figure 93355DEST_PATH_IMAGE008
,
Figure 623694DEST_PATH_IMAGE008
Calculated by the following formula: />
Figure 507379DEST_PATH_IMAGE008
=/>
Figure 100002_DEST_PATH_IMAGE024
+2π×round/>
Figure 100002_DEST_PATH_IMAGE026
Wherein is present>
Figure 451064DEST_PATH_IMAGE024
For the adjacent shooting phase point distribution of t phase points>
Figure 100002_DEST_PATH_IMAGE028
The distribution of the photographed phase points is t phase points.
As a further scheme of the invention: the control module calculates the gradient distribution of the wafer surface in the x horizontal direction as
Figure 100002_DEST_PATH_IMAGE030
，/>
Figure 806959DEST_PATH_IMAGE030
Calculated by the following formula: />
Figure 582017DEST_PATH_IMAGE030
=2π/>
Figure DEST_PATH_IMAGE032
Wherein alpha is an included angle between a shooting optical axis of the industrial camera and the x horizontal direction; the gradient profile in the vertical direction of the wafer surface y is calculated as->
Figure DEST_PATH_IMAGE034
，/>
Figure 302849DEST_PATH_IMAGE034
Calculated by the following formula: />
Figure 796147DEST_PATH_IMAGE034
=2π
Figure DEST_PATH_IMAGE036
And beta is an included angle between a shooting optical axis of the industrial camera and the vertical direction of y.
The invention has the beneficial effects that:
(1) The invention relates to a wafer surface inspection method, which comprises the steps of when a laser source projects light beams to the surface of a wafer along the vertical direction, using an industrial camera to shoot stripe reflection light patterns on the surface of the wafer at different phase points, using a control module to extract the phase distribution of the stripe reflection light patterns shot on the surface of the wafer, unfolding to obtain continuous phase distribution of stripe reflection, calculating the gradient distribution of the surface of the wafer in the horizontal direction and the vertical direction, and determining whether the surface of the wafer has defects or not, wherein compared with the prior art, the problem of poor wafer surface inspection effect caused by gray value comparison analysis by adopting shot images is solved;
(2) The wafer surface inspection device of the invention shoots through the industrial camera at different shooting phase point positions through the strip-shaped pattern projected by the wafer surface reflection light source, extracts the shot wafer surface stripe reflection light pattern through the control module and carries out calculation processing, and the obtained gradient distribution in the horizontal direction and the vertical direction of the wafer surface indicates that the wafer surface has defects such as scratches or stains under the condition of sudden increase or reduction, thereby rapidly determining whether the wafer surface has defects.
Drawings
The invention is further described below with reference to the accompanying drawings.
FIG. 1 is a flow chart of a wafer surface inspection method of the present invention;
FIG. 2 is a schematic structural diagram of an apparatus for inspecting a wafer surface according to the present invention.
In the figure: 10. a wafer; 20. a laser source; 30. an industrial camera; 40. a control module; 50. a display screen.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
Referring to fig. 1, the present invention is a method for inspecting a wafer surface, comprising the following steps:
s0, projecting a light beam to the surface of the wafer 10 along the vertical direction by using the laser source 20, wherein the light beam projected in the vertical direction can ensure that the brightness of the surface of the wafer 10 is uniform, so that light spots on the surface of the wafer 10 caused by the laser source 20 are reduced to the greatest extent, and a foundation is laid for defect detection according to the surface image of the wafer 10.
S1, when the surface of the wafer 10 is projected by the laser source 20, the industrial camera 30 is used for shooting the stripe reflection light pattern on the surface of the wafer 10, and the surface defects of the detected wafer 10 can be quickly analyzed through the analysis of the stripe reflection light pattern on the shot wafer 10.
S2, when the industrial camera 30 is used for shooting the fringe reflection light pattern on the surface of the wafer 10, the industrial camera 30 shoots at least 5 groups of phase points relative to the surface of the wafer 10, the control module 40 is used for extracting the phase distribution of the shot fringe reflection light pattern on the surface of the wafer 10, and the phase distribution is expanded to obtain the fringe reflection continuous phase distribution.
In this step, the shooting phase points of the industrial camera 30 are T =1,2,3,4,5, say, T groups, and the distribution of the shooting phase points is extracted as W, which is calculated by the following formula: w = -arctan
Figure 627837DEST_PATH_IMAGE002
Wherein is present>
Figure 522980DEST_PATH_IMAGE004
For capturing the value of the light intensity at the phase point>
Figure 617975DEST_PATH_IMAGE006
Phase shift steps for the acquisition phase points.
In this step, according to the extracted distribution of the shooting phase points, the adjacent shooting phase points are spread to
Figure 598570DEST_PATH_IMAGE008
,/>
Figure 765109DEST_PATH_IMAGE008
Calculated by the following formula: />
Figure 124546DEST_PATH_IMAGE008
=/>
Figure 515076DEST_PATH_IMAGE010
+2π×round/>
Figure 592753DEST_PATH_IMAGE012
Wherein is present>
Figure 359721DEST_PATH_IMAGE010
For the adjacent shooting phase point distribution of t phase points>
Figure 839244DEST_PATH_IMAGE014
And shooting phase point distribution for the t phase points, thereby obtaining fringe reflection continuous phase distribution.
And S3, calculating the gradient distribution of the horizontal direction and the vertical direction of the surface of the wafer 10 based on the fringe reflection continuous phase distribution, and determining whether the surface of the wafer 10 has defects.
In this step, the gradient distribution in the x horizontal direction on the surface of the wafer 10 is calculated as
Figure 666255DEST_PATH_IMAGE016
，/>
Figure 231228DEST_PATH_IMAGE016
Calculated by the following formula: />
Figure 536308DEST_PATH_IMAGE016
=2π/>
Figure 870337DEST_PATH_IMAGE018
Wherein α is an included angle between a shooting optical axis of the industrial camera 30 and the x horizontal direction; the gradient distribution in the vertical direction on the surface y of the wafer 10 is calculated as->
Figure 602670DEST_PATH_IMAGE020
，/>
Figure 654939DEST_PATH_IMAGE020
Calculated by the following formula: />
Figure 232551DEST_PATH_IMAGE020
=2π/>
Figure 483404DEST_PATH_IMAGE022
Wherein β is an angle between the optical axis of the industrial camera 30 and the y-vertical direction, and if there is an abrupt increase or an abrupt decrease in the gradient distribution of the surface of the wafer 10 in the horizontal direction and the vertical direction according to the gradient distribution of the surface of the wafer 10 in the horizontal direction and the vertical direction, it indicates that there is a defect on the surface of the wafer 10, such as a scratch or a stain, so as to quickly determine whether there is a defect on the surface of the wafer 10.
The fringe reflection continuous phase distribution in the step S2 and the gradient distribution in the step S3 are displayed by the display screen 50, and the fringe reflection light pattern on the surface of the wafer 10 is photographed by the control module 40, and the display screen 50 can display the fringe reflection continuous phase distribution and the gradient distribution according to the extraction and calculation processing, so that whether the surface of the wafer 10 has defects can be intuitively and quickly judged.
Example 2
Referring to fig. 2, a wafer surface inspection apparatus includes:
the laser source 20 is used for projecting light beams to the surface of the wafer 10 along the vertical direction, the laser source 20 adopts an LED backlight source, the light beams projected in the vertical direction can ensure that the brightness of the surface of the wafer 10 is uniform, light spots on the surface of the wafer 10 caused by the laser source 20 are reduced to the greatest extent, and a foundation is laid for defect detection according to the surface image of the wafer 10.
The industrial camera 30 is used for photographing the fringe reflection light pattern on the surface of the wafer 10 at different phase positions, the resolution of the industrial camera 30 is 1600 × 1200, and the phase positions photographed by the industrial camera 30 are T =1,2,3,4,5.
A control module 40 for extracting a phase distribution of the shot fringe reflection light pattern on the surface of the processed wafer 10, and developing to obtain a fringe reflection continuous phase distribution, calculating a gradient distribution in the horizontal direction and the vertical direction of the surface of the wafer 10 based on the fringe reflection continuous phase distribution, and determining whether there is a defect on the surface of the wafer 10, wherein the control module 40 includes arithmetic devices such as, but not limited to: a Central Processing Unit (CPU) and a storage device such as a Hard Disk Drive (HDD).
The control module 40 extracts the shot phase point distribution of the shot fringe reflected light pattern on the surface of the wafer 10 as W, which is calculated by the following formula: w = -arctan
Figure 262004DEST_PATH_IMAGE002
In which>
Figure 920344DEST_PATH_IMAGE004
For capturing the value of the light intensity at the phase point>
Figure 442592DEST_PATH_IMAGE006
Phase shift steps for the acquisition phase points.
The control module 40 spreads the distribution of adjacent shot phase points into
Figure 875848DEST_PATH_IMAGE008
,/>
Figure 825349DEST_PATH_IMAGE008
Calculated by the following formula: />
Figure 711266DEST_PATH_IMAGE008
=
Figure 771626DEST_PATH_IMAGE024
+2π×round/>
Figure 59387DEST_PATH_IMAGE026
In which>
Figure 179790DEST_PATH_IMAGE024
For the recording phase point distribution adjacent to the t phase point, ->
Figure 818582DEST_PATH_IMAGE028
The distribution of the photographed phase points is t phase points.
The control module 40 calculates the gradient profile of the wafer 10 surface in the x-horizontal direction as
Figure 682633DEST_PATH_IMAGE030
，/>
Figure 824901DEST_PATH_IMAGE030
Calculated by the following formula: />
Figure 647364DEST_PATH_IMAGE030
=2π/>
Figure 711134DEST_PATH_IMAGE032
Wherein α is an included angle between a shooting optical axis of the industrial camera 30 and the x horizontal direction; calculating chip 10 surface y has a gradient profile in the vertical direction of->
Figure 769089DEST_PATH_IMAGE034
，/>
Figure 641230DEST_PATH_IMAGE034
Calculated by the following formula: />
Figure 493649DEST_PATH_IMAGE034
=2π/>
Figure 451240DEST_PATH_IMAGE036
Wherein β is an angle between the shooting optical axis of the industrial camera 30 and the y-vertical direction.
And the display screen 50 is used for displaying the fringe reflection continuous phase distribution and the gradient distribution, and the display screen 50 can display the fringe reflection continuous phase distribution and the gradient distribution according to the extraction and calculation processing, so that whether defects exist on the surface of the wafer 10 can be visually and rapidly judged.
In this embodiment, the strip patterns projected by the light source reflected by the surface of the wafer 10 are captured by the industrial camera 30 at different capturing phase points, the captured fringe reflected light patterns on the surface of the wafer are extracted by the control module 40 and are calculated, and if the gradient distribution of the surface of the wafer 10 in the horizontal direction and the vertical direction is suddenly increased or decreased, it is indicated that the surface of the wafer 10 has defects such as scratches or stains, so as to quickly determine whether the surface of the wafer 10 has defects.
While one embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be taken as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.

Claims (10)

1. A wafer surface inspection method is characterized by comprising the following steps:
s0, projecting a light beam to the surface of the wafer (10) along the vertical direction by using a laser source (20);
s1, shooting a stripe reflection light pattern on the surface of the wafer (10) by using an industrial camera (30) when the surface of the wafer (10) is projected by using the laser source (20);
s2, when the industrial camera (30) is used for shooting the fringe reflection light pattern on the surface of the wafer (10), the industrial camera (30) shoots at least 5 groups of phase points relative to the surface of the wafer (10), a control module (40) is used for extracting the phase distribution of the fringe reflection light pattern shot on the surface of the wafer (10), and the fringe reflection continuous phase distribution is obtained through expansion;
and S3, calculating the gradient distribution of the horizontal direction and the vertical direction of the surface of the wafer (10) based on the fringe reflection continuous phase distribution, and determining whether the surface of the wafer (10) is defective or not.
2. A wafer surface inspection method according to claim 1, wherein the industrial camera (30) in step S2 captures phase points T =1,2,3,4,5. W = -arctan
Figure DEST_PATH_IMAGE002
Wherein is present>
Figure DEST_PATH_IMAGE004
For capturing the value of the light intensity at the phase point>
Figure DEST_PATH_IMAGE006
Phase shift steps for the acquisition phase points.
3. The method according to claim 2, wherein the step 2 extracts a distribution of the phase points, and spreads the distribution of adjacent phase points into
Figure DEST_PATH_IMAGE008
,/>
Figure 66479DEST_PATH_IMAGE008
Calculated by the following formula: />
Figure 45936DEST_PATH_IMAGE008
=
Figure DEST_PATH_IMAGE010
+2π×round/>
Figure DEST_PATH_IMAGE012
In which>
Figure 12624DEST_PATH_IMAGE010
For the recording phase point distribution adjacent to the t phase point, ->
Figure DEST_PATH_IMAGE014
And shooting phase point distribution for the t phase points, thereby obtaining fringe reflection continuous phase distribution.
4. A method for inspecting a wafer surface according to claim 4, wherein said fringe reflection continuous phase distribution in said step S2 is calculated as a gradient distribution in a x-horizontal direction on the surface of the wafer (10)
Figure DEST_PATH_IMAGE016
，/>
Figure 860363DEST_PATH_IMAGE016
Calculated by the following formula: />
Figure 940315DEST_PATH_IMAGE016
=2π/>
Figure DEST_PATH_IMAGE018
Wherein alpha is an included angle between a shooting optical axis of the industrial camera (30) and the x horizontal direction; calculating a gradient distribution in the vertical direction y of the surface of the wafer (10) as->
Figure DEST_PATH_IMAGE020
，/>
Figure 611380DEST_PATH_IMAGE020
Calculated by the following formula: />
Figure 940730DEST_PATH_IMAGE020
=2π/>
Figure DEST_PATH_IMAGE022
And beta is an included angle between the shooting optical axis of the industrial camera (30) and the y vertical direction, and whether the surface of the wafer (10) is defective or not is determined according to the gradient distribution of the surface of the wafer (10) in the horizontal direction and the vertical direction.
5. A method for inspecting a surface of a wafer according to claim 1, wherein the fringe reflection continuous phase distribution in step S2 and the gradient distribution in step S3 are displayed on a display screen (50).
6. A wafer surface inspection apparatus, comprising:
a laser source (20) for projecting a beam in a vertical direction towards a surface of the wafer (10);
an industrial camera (30) for capturing fringe reflected light patterns of the wafer (10) surface at different phase points;
the control module (40) is used for extracting and processing the phase distribution of the shot fringe reflection light pattern on the surface of the wafer (10), expanding and acquiring fringe reflection continuous phase distribution, calculating the gradient distribution of the horizontal direction and the vertical direction of the surface of the wafer (10) based on the fringe reflection continuous phase distribution, and determining whether the surface of the wafer (10) is defective or not;
a display screen (50) for displaying the fringe reflection continuous phase profile and the gradient profile.
7. A wafer surface inspection apparatus as claimed in claim 6, characterized in that the industrial camera (30) captures phase points in T =1,2,3,4,5.
8. The wafer surface inspection apparatus according to claim 7, wherein the control module (40) extracts a shot phase point distribution of the shot fringe reflected light pattern on the surface of the wafer (10) as W, which is calculated by the following formula: w = -arctan
Figure 201947DEST_PATH_IMAGE002
Wherein is present>
Figure 339667DEST_PATH_IMAGE004
For recording the light intensity value of a phase point>
Figure 926506DEST_PATH_IMAGE006
Phase shift steps for the acquisition phase points.
9. The wafer surface inspection apparatus according to claim 8, wherein the control module (40) spreads the distribution of adjacent shot phase points to
Figure 149677DEST_PATH_IMAGE008
,/>
Figure 480164DEST_PATH_IMAGE008
Calculated by the following formula: />
Figure 472391DEST_PATH_IMAGE008
=/>
Figure 761290DEST_PATH_IMAGE010
+2π×round
Figure 471757DEST_PATH_IMAGE012
Wherein is present>
Figure 543618DEST_PATH_IMAGE010
For the recording phase point distribution adjacent to the t phase point, ->
Figure 46144DEST_PATH_IMAGE014
The distribution of the shot phase points is the t phase point.
10. A wafer surface inspection apparatus as claimed in claim 9, wherein the control module (40) calculates a gradient distribution in the x horizontal direction of the surface of the wafer (10) as
Figure DEST_PATH_IMAGE024
，/>
Figure 646889DEST_PATH_IMAGE024
Calculated by the following formula: />
Figure 234865DEST_PATH_IMAGE024
=2π/>
Figure DEST_PATH_IMAGE026
Wherein alpha is an included angle between a shooting optical axis of the industrial camera (30) and the x horizontal direction; calculating a gradient distribution in the vertical direction y of the surface of the wafer (10) as->
Figure DEST_PATH_IMAGE028
，/>
Figure 438314DEST_PATH_IMAGE028
Calculated by the following formula: />
Figure 328686DEST_PATH_IMAGE028
=2π/>
Figure DEST_PATH_IMAGE030
Wherein beta is an included angle between a shooting optical axis of the industrial camera (30) and the y vertical direction. />
CN202211609434.2A 2022-12-15 2022-12-15 Wafer surface inspection device and inspection method Pending CN115931897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211609434.2A CN115931897A (en) 2022-12-15 2022-12-15 Wafer surface inspection device and inspection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211609434.2A CN115931897A (en) 2022-12-15 2022-12-15 Wafer surface inspection device and inspection method

Publications (1)

Publication Number Publication Date
CN115931897A true CN115931897A (en) 2023-04-07

Family

ID=86698760

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211609434.2A Pending CN115931897A (en) 2022-12-15 2022-12-15 Wafer surface inspection device and inspection method

Country Status (1)

Country Link
CN (1) CN115931897A (en)

Similar Documents

Publication Publication Date Title
KR100474571B1 (en) Method of setting reference images, method and apparatus using the setting method for inspecting patterns on a wafer
US7315642B2 (en) System and method for measuring thin film thickness variations and for compensating for the variations
US8775101B2 (en) Detecting defects on a wafer
JP5624326B2 (en) Method for accurately identifying the edge of an inspection area for an array area formed on a wafer, and a method for binning detected defects in an array area formed on a wafer
JP5225297B2 (en) Method for recognizing array region in die formed on wafer, and setting method for such method
KR101192053B1 (en) Apparatus and method for detecting semiconductor substrate anomalies
US20060233434A1 (en) Method and apparatus for inspection
EP2396815A2 (en) Detecting defects on a wafer
JP2003215060A (en) Pattern inspection method and inspection apparatus
JP2005156475A (en) Pattern defect inspection device and method
TW201435330A (en) Detecting defects on a wafer
JP2010535430A5 (en)
KR102599933B1 (en) Defect inspection device, defect inspection method
TW201337839A (en) Segmentation for wafer inspection
EP1174707A1 (en) Defect inspection method and defect inspection apparatus
WO2014205385A1 (en) Wafer inspection using free-form care areas
CN111307819B (en) Wafer edge defect detection system and method
JP5085953B2 (en) Surface inspection device
US20140205180A1 (en) Method, apparatus and device for inspecting circuit pattern defect
JPH04107946A (en) Automatic visual inspector
JP2010181328A (en) Device, program and method for inspecting surface of solar battery wafer
TWI466206B (en) Edge inspection and metrology
JP2004251781A (en) Defect inspection method by image recognition
CN115931897A (en) Wafer surface inspection device and inspection method
JP2005236094A (en) Method for manufacturing semiconductor device, method and system for failure analysis

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination