CN115915887A - 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 - Google Patents

氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 Download PDF

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Publication number
CN115915887A
CN115915887A CN202111161686.9A CN202111161686A CN115915887A CN 115915887 A CN115915887 A CN 115915887A CN 202111161686 A CN202111161686 A CN 202111161686A CN 115915887 A CN115915887 A CN 115915887A
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CN
China
Prior art keywords
molybdenum oxide
oxide nano
nano material
halogenated
hole
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Pending
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CN202111161686.9A
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English (en)
Chinese (zh)
Inventor
徐威
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TCL Technology Group Co Ltd
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TCL Technology Group Co Ltd
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Publication date
Application filed by TCL Technology Group Co Ltd filed Critical TCL Technology Group Co Ltd
Priority to CN202111161686.9A priority Critical patent/CN115915887A/zh
Priority to PCT/CN2022/121354 priority patent/WO2023051461A1/fr
Publication of CN115915887A publication Critical patent/CN115915887A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
CN202111161686.9A 2021-09-30 2021-09-30 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 Pending CN115915887A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202111161686.9A CN115915887A (zh) 2021-09-30 2021-09-30 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件
PCT/CN2022/121354 WO2023051461A1 (fr) 2021-09-30 2022-09-26 Nanomatériau d'oxyde de molybdène, son procédé de préparation et dispositif photoélectrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111161686.9A CN115915887A (zh) 2021-09-30 2021-09-30 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件

Publications (1)

Publication Number Publication Date
CN115915887A true CN115915887A (zh) 2023-04-04

Family

ID=85732253

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111161686.9A Pending CN115915887A (zh) 2021-09-30 2021-09-30 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件

Country Status (2)

Country Link
CN (1) CN115915887A (fr)
WO (1) WO2023051461A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101508893B1 (ko) * 2008-04-28 2015-04-07 다이니폰 인사츠 가부시키가이샤 정공 주입 수송층을 갖는 디바이스, 및 그 제조 방법, 및 정공 주입 수송층 형성용 잉크
BR112013005944A2 (pt) * 2010-09-14 2016-06-14 Council Scient Ind Res "complexo de molibdênio acetilido dioxo organometálico e processo para a sua preparação."
JP2013182919A (ja) * 2012-02-29 2013-09-12 Nippon Seiki Co Ltd 有機ｅｌ素子
CN105374953B (zh) * 2015-12-24 2019-01-04 Tcl集团股份有限公司 一种量子点发光二极管及制备方法、发光模组与显示装置
CN106299159B (zh) * 2016-08-25 2018-11-09 纳晶科技股份有限公司 金属氧化物纳米颗粒的制备方法及量子点电致发光器件

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Publication number Publication date
WO2023051461A1 (fr) 2023-04-06

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