CN115915887A - 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 - Google Patents
氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 Download PDFInfo
- Publication number
- CN115915887A CN115915887A CN202111161686.9A CN202111161686A CN115915887A CN 115915887 A CN115915887 A CN 115915887A CN 202111161686 A CN202111161686 A CN 202111161686A CN 115915887 A CN115915887 A CN 115915887A
- Authority
- CN
- China
- Prior art keywords
- molybdenum oxide
- oxide nano
- nano material
- halogenated
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111161686.9A CN115915887A (zh) | 2021-09-30 | 2021-09-30 | 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 |
PCT/CN2022/121354 WO2023051461A1 (fr) | 2021-09-30 | 2022-09-26 | Nanomatériau d'oxyde de molybdène, son procédé de préparation et dispositif photoélectrique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202111161686.9A CN115915887A (zh) | 2021-09-30 | 2021-09-30 | 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN115915887A true CN115915887A (zh) | 2023-04-04 |
Family
ID=85732253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202111161686.9A Pending CN115915887A (zh) | 2021-09-30 | 2021-09-30 | 氧化钼纳米材料及制备方法、空穴功能薄膜及光电器件 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN115915887A (fr) |
WO (1) | WO2023051461A1 (fr) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101508893B1 (ko) * | 2008-04-28 | 2015-04-07 | 다이니폰 인사츠 가부시키가이샤 | 정공 주입 수송층을 갖는 디바이스, 및 그 제조 방법, 및 정공 주입 수송층 형성용 잉크 |
BR112013005944A2 (pt) * | 2010-09-14 | 2016-06-14 | Council Scient Ind Res | "complexo de molibdênio acetilido dioxo organometálico e processo para a sua preparação." |
JP2013182919A (ja) * | 2012-02-29 | 2013-09-12 | Nippon Seiki Co Ltd | 有機el素子 |
CN105374953B (zh) * | 2015-12-24 | 2019-01-04 | Tcl集团股份有限公司 | 一种量子点发光二极管及制备方法、发光模组与显示装置 |
CN106299159B (zh) * | 2016-08-25 | 2018-11-09 | 纳晶科技股份有限公司 | 金属氧化物纳米颗粒的制备方法及量子点电致发光器件 |
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2021
- 2021-09-30 CN CN202111161686.9A patent/CN115915887A/zh active Pending
-
2022
- 2022-09-26 WO PCT/CN2022/121354 patent/WO2023051461A1/fr unknown
Also Published As
Publication number | Publication date |
---|---|
WO2023051461A1 (fr) | 2023-04-06 |
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