CN115913141A - Radio frequency push-pull power amplifier, circuit and radio frequency front end module - Google Patents
Radio frequency push-pull power amplifier, circuit and radio frequency front end module Download PDFInfo
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- CN115913141A CN115913141A CN202111161362.5A CN202111161362A CN115913141A CN 115913141 A CN115913141 A CN 115913141A CN 202111161362 A CN202111161362 A CN 202111161362A CN 115913141 A CN115913141 A CN 115913141A
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Abstract
The invention discloses a radio frequency push-pull power amplifier, which comprises a substrate, a radio frequency push-pull power amplification chip arranged on the substrate, and a first balun arranged on the substrate; the radio frequency push-pull power amplification chip comprises a first differential amplification transistor, a second differential amplification transistor and a first capacitor, wherein the output end of the first differential amplification transistor is connected with the first input end of a first balun; the output end of the second differential amplifying transistor is connected with the second input end of the first balun; the first end of the first capacitor is connected to a third bonding pad of the radio frequency push-pull power amplifier chip, the third bonding pad is bonded to the middle point of the primary coil of the first balun through a lead, and the second end of the first capacitor is grounded. The technical scheme can achieve the purposes of inhibiting the common-mode signal of the radio frequency push-pull power amplifier and adjusting the impedance point of the even harmonic of the radio frequency push-pull power amplifier, thereby improving the linearity of the radio frequency push-pull power amplifier chip.
Description
Technical Field
The invention relates to the technical field of radio frequency, in particular to a radio frequency push-pull power amplifier, a radio frequency push-pull power circuit and a radio frequency front-end module.
Background
As short-range, low-power wireless data transmission technologies mature, wireless network technologies are increasingly applied to new fields. Compared with the wired communication mode, the wireless communication takes an important position in the modern communication field due to a series of advantages that the wireless communication does not need to lay open wires, is convenient to use and the like.
At present, in order to ensure a bandwidth performance index when designing a push-pull power amplifier, linearity of a pull-up power amplifier circuit is often deteriorated, and therefore, how to improve the linearity of the pull-up power amplifier circuit when realizing the bandwidth performance index becomes a problem to be solved urgently at present.
Disclosure of Invention
The embodiment of the invention provides a radio frequency push-pull power amplifier, a circuit and a radio frequency front end module, which are used for solving the problem of poor linearity of the radio frequency push-pull power amplifier.
A radio frequency push-pull power amplifier comprises a substrate, a radio frequency push-pull power amplification chip arranged on the substrate, and a first balun arranged on the substrate; the radio frequency push-pull power amplification chip comprises a first differential amplification transistor, a second differential amplification transistor and a first capacitor, wherein the output end of the first differential amplification transistor is connected with the first input end of the first balun; the output end of the second differential amplifying transistor is connected with the second input end of the first balun; the first end of the first capacitor is connected to a third bonding pad of the radio frequency push-pull power amplifier chip, the third bonding pad is bonded to the middle point of the primary coil of the first balun through a wire, and the second end of the first capacitor is grounded.
Further, the output end of the first differential amplification transistor is connected to a first bonding pad of the radio frequency push-pull power amplification chip, and the first bonding pad is bonded to the first input end of the first balun through a wire; the output end of the second differential amplification transistor is connected to a second bonding pad of the radio frequency push-pull power amplification chip, and the second bonding pad is bonded to the second input end of the first balun through a lead.
Further, the radio frequency push-pull power amplifier further comprises a feed power supply end arranged on the substrate; the output end of the first differential amplification transistor is connected to a fourth bonding pad of the push-pull power amplification chip, and the fourth bonding pad is bonded to the feeding power supply end through a lead; the output end of the second differential amplification transistor is connected to a fifth bonding pad of the push-pull power amplification chip, and the fifth bonding pad is bonded to the feeding power supply end through a lead.
Further, the radio frequency push-pull power amplifier further comprises a second capacitor, a first end of the second capacitor is connected with the feed power supply end, and a second end of the second capacitor is connected with a ground end.
Further, the first capacitor and/or the second capacitor is an adjustable capacitor.
Further, the primary coil of the first balun includes a first primary coil segment and a second primary coil segment, the first pad is bonded to a first end of the first primary coil segment by a wire, a second end of the first primary coil segment is connected to a first end of the second primary coil segment, the second pad is bonded to a second end of the second primary coil segment by a wire, a first end of the first capacitor is connected to a third pad of the radio frequency push-pull power amplifier chip, the third pad is bonded between the first primary coil segment and the second primary coil segment by a wire, and a second end of the first capacitor is grounded.
Further, a lead between the first capacitor and the primary coil forms a first equivalent inductance, and one half of the primary coil forms a second equivalent inductance; the first capacitor, the first equivalent inductor and the second equivalent inductor are connected in series to form a first resonant circuit;
a lead between the second capacitor and the output end of the differential amplification transistor forms a third equivalent inductor; or a lead between the second capacitor and the output end of the second differential amplification transistor forms the third equivalent inductor;
the second capacitor is connected with the third equivalent inductor in series to form a second resonant circuit;
the first resonant circuit and the second resonant circuit have different resonant frequency points.
Further, the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier, and the second resonant circuit is configured to resonate at an even harmonic frequency point; alternatively, the first resonant circuit is configured to resonate at an even harmonic frequency point and the second resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier.
Further, the even harmonic frequency point is a second harmonic frequency point.
Further, the length of a lead between the first capacitor and the first balun is inversely related to the operating frequency of the radio frequency push-pull power amplifier.
Further, the first differential amplification transistor is a BJT transistor and includes a base, a collector and an emitter, the base of the first differential amplification transistor receives an input first radio frequency input signal, the collector of the first differential amplification transistor is connected to a first pad of the radio frequency push-pull power amplifier chip, the first pad is bonded to the first input end of the first balun by a wire, and the emitter of the first differential amplification transistor is grounded;
the second differential amplification transistor is a BJT (bipolar junction transistor) and comprises a base electrode, a collector electrode and an emitter electrode, the base electrode of the second differential amplification transistor receives an input second radio-frequency input signal, the collector electrode of the second differential amplification transistor is connected to a second bonding pad of the radio-frequency push-pull power amplifier chip, the second bonding pad is bonded to the second input end of the first balun through a lead, and the emitter electrode of the second differential amplification transistor is grounded.
Further, a first end of a secondary coil of the first balun outputs an amplified first radio frequency output signal, and a second end of the secondary coil outputs an amplified second radio frequency output signal; or a first end of the secondary coil of the first balun outputs the amplified radio frequency output signal, and a second end of the secondary coil is grounded.
A radio frequency push-pull power amplification circuit comprises a first differential amplification transistor, a second differential amplification transistor, a first capacitor, a first inductor, a second inductor, a third inductor and a first balun; the output end of the first differential amplification transistor is connected to the first input end of the first balun through the first inductor, and the output end of the second differential amplification transistor is connected to the second input end of the first balun through the second inductor; a first end of the first capacitor is connected to the midpoint of the primary coil of the first balun through the third inductor, and a second end of the first capacitor is grounded;
the first capacitor, the third inductor, and the first inductor or the second inductor are connected in series to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier.
Further, the radio frequency push-pull power amplifier further comprises a feed power supply end and a second capacitor; the output end of the first differential amplification transistor is connected to the feed power supply end through a fourth inductor; the output end of the second differential amplifying transistor is connected to the feed power end through a fifth inductor; the first end of the second capacitor is connected with the power supply end of the feed, and the second end of the second capacitor is connected with the ground end;
the second capacitor and the fourth inductor or the fifth inductor form a second resonant circuit configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier, or the second resonant circuit is configured to resonate at an even harmonic frequency point.
A radio frequency front end module comprises the radio frequency push-pull power amplifier or the radio frequency push-pull power amplifier circuit.
The radio frequency push-pull power amplifier comprises a substrate, a radio frequency push-pull power amplification chip arranged on the substrate, and a first balun arranged on the substrate; the radio frequency push-pull power amplifier chip comprises a first differential amplifier transistor, a second differential amplifier transistor and a first capacitor, wherein the output end of the first differential amplifier transistor is connected to a first bonding pad of the radio frequency push-pull power amplifier chip, the first bonding pad is connected with the first input end of a first balun, the output end of the second differential amplifier transistor is connected to a second bonding pad of the radio frequency push-pull power amplifier chip, and the second bonding pad is connected with the second input end of the first balun; the first end of the first capacitor is connected to a third bonding pad of the radio frequency push-pull power amplifier chip, the third bonding pad is bonded to the middle point of the primary coil of the first balun through a wire, and the second end of the first capacitor is grounded. In the embodiment, the first end of a first capacitor in the radio frequency push-pull power amplification chip is connected to a third bonding pad of the radio frequency push-pull power amplification chip, the third bonding pad is bonded to the midpoint of a primary coil of a first balun through a lead, and the second end of the first capacitor is grounded, so that the first capacitor, an equivalent inductor of the lead connected with the third bonding pad and the primary coil, and an equivalent inductor of one half of the primary coil are matched to form a first harmonic circuit; meanwhile, the first capacitor is arranged in the radio frequency push-pull power amplification chip, so that the occupied area of the radio frequency push-pull power amplifier can be reduced, the quality factor of the radio frequency push-pull power amplifier can be improved, and the loss caused by the radio frequency push-pull power amplifier can be reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
Fig. 1 is a circuit diagram of an rf push-pull power amplifier according to an embodiment of the invention;
fig. 2 is another circuit diagram of an rf push-pull power amplifier according to an embodiment of the invention;
fig. 3 is another circuit schematic diagram of an rf push-pull power amplifier according to an embodiment of the invention;
fig. 4 is another circuit diagram of an rf push-pull power amplifier according to an embodiment of the invention;
fig. 5 is another circuit diagram of an rf push-pull power amplifier according to an embodiment of the invention;
fig. 6 is a circuit diagram of an rf push-pull power amplifier circuit according to an embodiment of the invention;
fig. 7 is another circuit diagram of the rf push-pull power amplifier circuit according to an embodiment of the invention.
In the figure: 10. a substrate; 20. a radio frequency push-pull power amplification chip; 21. a first differential amplifying transistor; 22. a second differential amplifying transistor; 30. a first balun; 31. a primary coil; a. a first pad; b. A second bonding pad; c. a third pad; d. a fourth pad; e. and a fifth pad.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity to indicate like elements throughout.
It will be understood that when an element or layer is referred to as being "on," "over," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under 82303030," "under 823030; below," "under 823030; above," "over," etc. may be used herein for convenience of description to describe the relationship of one element or feature to another element or feature illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "at 8230, below" and "at 8230, below" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and/or "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
The present embodiment provides a radio frequency push-pull power amplifier, as shown in fig. 1, including a substrate 10, a radio frequency push-pull power amplification chip 20 disposed on the substrate 10, and a first balun 30 disposed on the substrate 10; the radio frequency push-pull power amplification chip 20 comprises a first differential amplification transistor 21, a second differential amplification transistor 22 and a first capacitor C21, wherein an output end of the first differential amplification transistor 21 is connected with a first input end of a first balun 30. Preferably, the output terminal of the first differential amplifying transistor 21 is connected to a first pad a of the radio frequency push-pull power amplifier chip, the first pad a is connected to the first input terminal of the first balun 30, and optionally, the first pad a is bonded to the first input terminal of the first balun 30 by a wire S1. The output of the second differential amplifying transistor 22 is connected to a second input of the first balun 30. Preferably, the output terminal of the second differential amplifying transistor 22 is connected to a second pad b of the radio frequency push-pull power amplifier chip, the second pad b is connected to the second input terminal of the first balun 30, and optionally, the second pad b is bonded to the second input terminal of the first balun 30 through a wire S2; the first end of the first capacitor C21 is connected to a third pad C of the radio frequency push-pull power amplifier chip, the third pad C is bonded to the midpoint of the primary coil 31 of the first balun 30 through a wire S3, and the second end of the first capacitor C21 is grounded.
Wherein the midpoint of the primary coil 31 is the center position of the primary coil 31, and the distance between the center position and the first input end of the primary coil 31 is equal to the distance between the center position and the second input end of the primary coil 31. For example, the midpoint of the primary coil 31 may be the position where the center tap of the first balun 30 is to be connected to the primary coil 31.
In a specific embodiment, the radio frequency push-pull power amplifier includes a substrate 10 and a radio frequency push-pull power amplification chip 20 disposed on the substrate 10. The push-pull power amplification chip is a bare chip which is not packaged. That is, all the components of the push-pull power amplifier chip, such as the first differential amplifier transistor 21, the second differential amplifier transistor 22, the first capacitor C21, and the like, are integrated on the same die.
The first differential amplifier transistor 21 and the second differential amplifier transistor 22 may be BJT transistors or Field Effect Transistors (FETs). Optionally, the first differential amplifying transistor 21 comprises at least one BJT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the first differential amplifying transistor 21 may be formed by connecting a plurality of BJT transistors in parallel. The second differential amplifying transistor 22 includes at least one BJT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the second differential amplifying transistor 22 may be formed by connecting a plurality of BJT transistors in parallel.
In a specific embodiment, the first differential amplifying transistor 21 is configured to amplify a first radio frequency input signal to output a first radio frequency amplified signal, the first radio frequency amplified signal being coupled to a first terminal of the primary coil 31 of the first balun 30, and the second differential amplifying transistor 22 is configured to amplify a second radio frequency input signal to output a second radio frequency amplified signal, the second radio frequency amplified signal being coupled to a second terminal of the primary coil 31 of the first balun 30. The first rf input signal may be an rf signal output after being amplified by a corresponding pre-stage amplifier circuit, or may be one of balanced rf signals obtained by converting an unbalanced input rf signal. Similarly, the second rf input signal may also be an rf signal output after being amplified by the corresponding pre-stage amplifier circuit, or may also be one of balanced rf signals obtained by converting an unbalanced input rf signal.
It is understood that the first differential amplifying transistor 21 and the second differential amplifying transistor 22 are any amplifying stage in the radio frequency push-pull power amplifier chip, and the amplifying stage may be any amplifying stage in a driving stage, an intermediate stage or an output stage.
In a specific embodiment, the rf push-pull power amplifier chip further includes a pre-stage conversion circuit (not shown), for example: the preceding stage conversion circuit may be a preceding stage conversion balun. The pre-stage conversion balun is configured to convert an unbalanced radio frequency input signal into a balanced first radio frequency input signal and a balanced second radio frequency input signal, and input the first radio frequency input signal to an input terminal of the first differential amplifying transistor 21 and input the second radio frequency input signal to an input terminal of the second differential amplifying transistor 22.
In a specific embodiment, the output terminal of the first differential amplifying transistor 21 is connected to a first pad a of the rf push-pull power amplifier chip, the first pad a is bonded to the first input terminal of the first balun 30 by a wire S1, the output terminal of the second differential amplifying transistor 22 is connected to a second pad b of the rf push-pull power amplifier chip, and the second pad b is bonded to the second input terminal of the first balun 30 by a wire S2, so that the first rf amplified signal output by the first differential amplifying transistor 21 is coupled to the first terminal of the primary coil 31 of the first balun 30, and the second rf amplified signal output by the second differential amplifying transistor 22 is coupled to the second terminal of the primary coil 31 of the first balun 30.
In a specific embodiment, the first pad a may be bonded to the first input terminal of the first balun 30 by one or more wires S1, and the second pad b may be bonded to the second input terminal of the first balun 30 by one or more wires S2, so that the first differential amplifying transistor 21 and the second differential amplifying transistor 22 are electrically connected to the first balun 30.
In a specific embodiment, on the basis of the above embodiment, in this embodiment, the first end of the first capacitor C21 in the radio frequency push-pull power amplifier chip 20 is connected to the third pad C of the radio frequency push-pull power amplifier chip, the third pad C is then bonded to the midpoint of the primary coil 31 of the first balun 30 by the wire S3, and the second end of the first capacitor C21 is grounded. Thus, the first capacitor C21 in the radio frequency push-pull power amplification chip 20 can form a first resonance circuit with an inductance equivalent to the lead S3 connecting the third pad C and the primary coil 31 and an inductance equivalent to one half of the primary coil 31, and the first resonance circuit is resonated at the even harmonic frequency point, so that the even harmonic signal in the radio frequency push-pull power amplification chip 20 can be resonated to the ground, and the purpose of adjusting the impedance point of the even harmonic can be achieved. It should be noted that, since the lead S3 connecting the third pad C and the primary coil 31 may be equivalent to a first equivalent inductor, one half of the primary coil 31 may be equivalent to a second equivalent inductor, and the first equivalent inductor and the second equivalent inductor can form an LC series resonant circuit with the first capacitor C21, the even harmonic signal in the radio frequency push-pull power amplifier chip 20 can be resonated to the ground without adding an additional inductor. It should be noted that, when the odd harmonic signal in the radio frequency push-pull power amplification chip 20 passes through the first balun 30, the odd harmonic signal received at the first input terminal of the first balun 30 and the odd harmonic signal received at the second input terminal of the first balun 30 cancel each other at the midpoint of the primary coil 31, and at this time, the midpoint of the primary coil 31 corresponds to a virtual ground with respect to the odd harmonic signal, that is, there is usually no odd harmonic signal at the midpoint of the primary coil 31, and only an even harmonic signal exists, so that the present application achieves the purpose of adjusting the impedance point of the even harmonic by resonating the first resonant circuit formed by the first capacitor C21, the third pad C and the lead S3 of the primary coil 31 and the half primary coil 31 at the even harmonic frequency point, and at the same time, the purpose of suppressing the common mode signal can be achieved by resonating the first resonant circuit formed by the first capacitor C21, the third pad C and the lead S3 of the primary coil 31 and the half primary coil 31 at the even frequency point.
In a specific embodiment, as shown in fig. 2, the primary coil 31 of the first balun 30 includes a first primary coil 31 segment and a second primary coil 31 segment, a first pad a is bonded to a first end of the first primary coil 31 segment by a wire, a second end of the first primary coil 31 segment is connected to a first end of the second primary coil 31 segment, a second pad b is bonded to a second end of the second primary coil 31 segment by a wire, a first end of the first capacitor is connected to a third pad c of the radio frequency push-pull power amplifier chip, the third pad c is bonded between the first primary coil 31 segment and the second primary coil 31 segment by a wire, and a second end of the first capacitor is grounded. It should be noted that, the lengths of the first primary coil 31 and the second primary coil 31 are equal, that is, the connection node between the first primary coil 31 and the second primary coil 31 is the midpoint of the primary coil 31. In this embodiment, the first capacitor C21 in the radio frequency push-pull power amplifier chip 20, the lead S3 connecting the third pad C and the primary coil 31, and the first primary coil 31 segment (or the second primary coil 31 segment) can form a first resonant circuit, and the first resonant circuit is resonated at the even harmonic frequency point, so as to adjust the impedance point of the even harmonic, and further improve the linearity of the push-pull power amplifier.
In a particular embodiment, the even harmonic signal may be at least one of a second order harmonic signal, a fourth order harmonic signal, and a sixth order harmonic signal. Preferably, the second-order harmonic signal has a large influence on the performance of the radio frequency push-pull power amplification chip 20, and therefore, the even-order harmonic signal in the present embodiment is mainly the second-order harmonic signal. In the present example, the first end of the first capacitor C21 in the radio frequency push-pull power amplifier chip 20 is connected to the third pad C of the radio frequency push-pull power amplifier chip, the third pad C is bonded to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and the second end of the first capacitor C21 is grounded, so that the first capacitor, the equivalent inductance of the lead connecting the third pad C and the primary coil 31, and the equivalent inductance of one half of the primary coil 31 can cooperate to form a first harmonic circuit, and the first harmonic circuit is resonated at different harmonic frequency points, for example, the first harmonic circuit is resonated at a fundamental frequency point, so as to achieve the purpose of suppressing the common mode signal of the radio frequency push-pull power amplifier, and the first harmonic circuit is resonated at an even harmonic frequency point, so as to achieve the purpose of adjusting the impedance point of the even harmonic of the radio frequency push-pull power amplifier; thereby improving the linearity of the radio frequency push-pull power amplifier.
Further, since the first capacitor C1 is disposed on the rf push-pull power amplifier chip 20, the first capacitor C21 disposed in the rf push-pull power amplifier chip 20 has the characteristics of small size and high Q (quality factor) value. In the embodiment, the first end of the first capacitor C21 in the radio frequency push-pull power amplifier chip 20 is connected to the third pad C of the radio frequency push-pull power amplifier chip, the third pad C is bonded to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and the second end of the first capacitor C21 is grounded, so that not only can the impedance point of even-order harmonics of the radio frequency push-pull power amplifier be adjusted, the linearity of the radio frequency push-pull power amplifier chip 20 be improved, but also the occupied area of the radio frequency push-pull power amplifier can be reduced, and the loss of the radio frequency push-pull power amplifier can be reduced.
In a specific embodiment, the resonance frequency point of the first resonant circuit formed by the first capacitor C21 and the lead S3 connecting the third pad C and the primary coil 31 and one half of the primary coil 31 may be configured according to actual requirements to select the suppression of the even harmonic signal. The resonance frequency point of the formed first resonance circuit may be configured by, for example, configuring the capacitance value of the first capacitor C21, the length of the lead S3 of the lead wire connecting the third pad C and the primary coil 31, or the number of turns of the primary coil 31.
In a specific embodiment, the third pad C may be bonded to the midpoint of the primary coil 31 of the first balun 30 by one or more wires S3, thereby electrically connecting the first capacitor C21 to the midpoint of the first balun 30.
In the present embodiment, the radio frequency push-pull power amplifier includes a substrate 10, a radio frequency push-pull power amplification chip 20 disposed on the substrate 10, and a first balun 30 disposed on the substrate 10; the radio frequency push-pull power amplifier chip 20 comprises a first differential amplifier transistor 21, a second differential amplifier transistor 22 and a first capacitor C21, wherein the output end of the first differential amplifier transistor 21 is connected to a first pad a of the radio frequency push-pull power amplifier chip, the first pad a is bonded to the first input end of a first balun 30 through a lead S1, the output end of the second differential amplifier transistor 22 is connected to a second pad b of the radio frequency push-pull power amplifier chip, and the second pad b is bonded to the second input end of the first balun 30 through a lead S2; the first end of the first capacitor C21 is connected to a third pad C of the radio frequency push-pull power amplifier chip, the third pad C is bonded to the midpoint of the primary coil 31 of the first balun 30 through a wire S3, and the second end of the first capacitor C21 is grounded. In this embodiment, the first end of the first capacitor C21 in the radio frequency push-pull power amplifier chip 20 is connected to the third pad C of the radio frequency push-pull power amplifier chip, the third pad C is bonded to the midpoint of the primary coil 31 of the first balun 30 through the lead S3, and the second end of the first capacitor C21 is grounded, so that the first capacitor C21 can be matched with the lead S3 connecting the third pad C and the primary coil 31 and one half of the primary coil 31, so as to adjust the impedance point of the even harmonic of the radio frequency push-pull power amplifier, and further improve the linearity of the radio frequency push-pull power amplifier chip 20; meanwhile, the first capacitor C21 arranged in the radio frequency push-pull power amplification chip 20 has the characteristics of small volume and high Q (quality factor) value, and the first capacitor C21 arranged in the radio frequency push-pull power amplification chip 20 can also reduce the occupied area of the radio frequency push-pull power amplifier and reduce the loss of the radio frequency push-pull power amplifier.
In one embodiment, as shown in fig. 3, the radio frequency push-pull power amplifier further includes a power supply terminal VCC disposed on the substrate 10; the output end of the first differential amplifying transistor 21 is connected to a fourth pad d of the push-pull power amplifying chip, and the fourth pad d is bonded to a power supply end VCC through a lead S4; the output terminal of the second differential amplifying transistor 22 is connected to a fifth pad e of the push-pull power amplifying chip, and the fifth pad e is bonded to the feeding power supply terminal VCC through a wire S5.
The power supply terminal VCC is a port connected to a power supply. In the present embodiment, a feeding signal provided by the feeding power supply is transmitted to the output terminal of the first differential amplifying transistor 21 and the output terminal of the second differential amplifying transistor 22 through the feeding power supply terminal VCC to ensure that the first differential amplifying transistor 21 and the second differential amplifying transistor 22 can operate normally. Since the area of the radio frequency push-pull power amplifier chip is limited, a power supply terminal VCC is disposed on the substrate 10, the power supply terminal VCC is connected to the fourth pad d/the fifth pad e of the radio frequency push-pull power amplifier chip through a wire S4/S5 in a bonding manner, the output terminal of the first differential amplification transistor 21 is connected to the fourth pad d of the radio frequency push-pull power amplifier chip, and the output terminal of the second differential amplification transistor 22 is connected to the fifth pad e of the radio frequency push-pull power amplifier chip, so as to realize power supply to the first differential amplification transistor 21 and the second differential amplification transistor 22.
In an embodiment, as shown in fig. 4, the radio frequency push-pull power amplifier further includes a second capacitor C11, a first end of the second capacitor C11 is connected to the power supply terminal VCC, and a second end of the second capacitor C11 is connected to the ground terminal.
In one embodiment, the second capacitor C11 is a decoupling capacitor. In order to further ensure the stability of the feeding signal supplied from the feeding power supply terminal VCC to the first differential amplifying transistor 21 and the second differential amplifying transistor 22, the present application connects a second capacitor C11, one end of the second capacitor C11 is connected to the feeding power supply terminal VCC, and the other end is grounded. This application adopts a feed power supply end VCC to realize providing feed signal to first differential amplification transistor 21 and second differential amplification transistor 22 to and through being connected to feed power supply end VCC with second electric capacity C11, and realize can guaranteeing the stability of the feed signal who provides to first differential amplification transistor 21 and second differential amplification transistor 22 through a second electric capacity C11, thereby under the unchangeable circumstances of the whole performance of guaranteeing the radio frequency front end module, still further reduced the area occupied of radio frequency front end module.
In a specific embodiment, on the basis of the above embodiment, the second capacitor C11 and the lead S4 connecting the output end of the first differential amplifying transistor 21 and the first input end of the first balun 30 form a second resonant circuit, or the second capacitor C11 and the lead S5 connecting the output end of the second differential amplifying transistor 22 and the second input end of the first balun 30 can form a second resonant circuit, and the resonant frequency point of the second resonant circuit is different from that of the first resonant circuit, so that the first resonant circuit and the second resonant circuit can cooperate to realize frequency selection, adjust the impedance point of the even harmonic, and suppress the push-pull signal at the same time, so as to obtain the differential mode signal required by the rf push-pull power amplifier chip 20, thereby improving the adjustment capability of the impedance point of the even harmonic and the suppression capability of the common mode signal of the rf push-pull power amplifier, and achieving the purpose of improving the overall performance of the rf push-pull power amplifier.
In a specific embodiment, since the lead S4 between the output terminal of the first differential amplifying transistor 21 and the power supply terminal VCC can be equivalent to a third equivalent inductor, the second capacitor C11 and the third equivalent inductor can form a second resonant circuit, so as to cooperate with the first resonant circuit to realize frequency selection, and improve the adjustment capability of the impedance point of the even harmonic of the radio frequency push-pull power amplifier and the common mode signal rejection capability.
In another embodiment, the lead S5 between the output terminal of the second differential amplifying transistor 22 and the power supply terminal VCC may also be equivalent to a third equivalent inductor; the second capacitor C11 and the third equivalent inductor are connected in series to form a second resonance circuit, so that frequency selection is realized by matching with the first resonance circuit, and the adjustment capability and the common-mode signal rejection capability of the impedance point of the even harmonic of the radio frequency push-pull power amplifier are improved.
In an embodiment, the first capacitor C21 and/or the second capacitor C11 are tunable capacitors.
As an example, the first capacitor C21 may be an adjustable capacitor, and a capacitance value of the first capacitor C21 may be adjusted according to actual requirements, so as to configure a resonant frequency point of the first resonant circuit, thereby implementing suppression on even harmonic signals of different frequency bands.
As another example, the second capacitor C11 may be an adjustable capacitor, and a capacitance value of the second capacitor C11 may be adjusted according to actual requirements, so as to configure a resonant frequency point of the second resonant circuit, thereby implementing suppression on even harmonic signals or common mode signals of different frequency bands.
As another example, the first capacitor C21 and the second capacitor C11 may be adjustable capacitors, and the capacitance values of the first capacitor C21 and the second capacitor C11 may be adjusted according to actual requirements, so as to configure the resonant frequency points of the first resonant circuit and the second resonant circuit, for example, the first resonant circuit is configured to resonate at the even harmonic frequency point of the radio frequency push-pull power amplifier, the second resonant circuit is configured to resonate at the fundamental frequency point, so that the first resonant circuit adjusts the impedance point of the even harmonic, and the second resonant circuit suppresses the common mode signal, or the first resonant circuit is configured to resonate at the fundamental frequency point of the radio frequency push-pull power amplifier, and the second resonant circuit is configured to resonate at the even harmonic frequency point, so that the first resonant circuit suppresses the common mode signal, and the second resonant circuit adjusts the impedance point of the even harmonic, and the adjustability of the push-pull impedance point of the even harmonic and the common mode signal suppression capability of the radio frequency push-pull power amplifier are improved; and further improve the linearity of the radio frequency push-pull power amplifier.
In one embodiment, the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier, and the second resonant circuit is configured to resonate at an even harmonic frequency point; alternatively, the first resonant circuit is configured to resonate at an even harmonic frequency point and the second resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier.
In a specific embodiment, the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier, and the second resonant circuit is configured to resonate at an even harmonic frequency point, so that the first resonant circuit can suppress a common mode signal in the radio frequency push-pull power amplifier, and the second resonant circuit can suppress an even harmonic signal in the radio frequency push-pull power amplifier, thereby improving harmonic signal suppression capability and common mode signal suppression capability of the radio frequency push-pull power amplifier.
In another specific embodiment, the first resonant circuit is configured to resonate at an even harmonic frequency point of the radio frequency push-pull power amplifier, and the second resonant circuit is configured to resonate at a fundamental frequency point, so that the first resonant circuit can suppress even harmonic signals in the radio frequency push-pull power amplifier, and the second resonant circuit can suppress common mode signals in the radio frequency push-pull power amplifier, thereby improving harmonic signal suppression capability and common mode signal suppression capability of the radio frequency push-pull power amplifier.
In one embodiment, the even harmonic frequency points are second harmonic frequency points.
In this embodiment, in the radio frequency push-pull power amplifier, the second-order harmonic signal has a large influence on the performance of the radio frequency push-pull power amplifier, such as power and efficiency. Preferably, the even harmonic frequency point is a second-order harmonic frequency point, so that a second-order harmonic signal in the radio frequency push-pull power amplifier is suppressed, and the overall performance of the radio frequency power amplifier is improved.
In an embodiment, the length of the lead between the first capacitor C21 and the first balun 30 is inversely related to the operating frequency of the rf push-pull power amplifier.
In one embodiment, since the lead S3 between the first capacitor C21 and the first balun 30 may be equivalent to a first equivalent inductor, the longer the length of the lead S3, the larger the inductance of the first equivalent inductor, and the shorter the length of the lead S3, the smaller the inductance of the first equivalent inductor.
Calculating a formula according to the resonance frequency point of the first resonance circuit:
wherein f0 is the resonant frequency point of the first resonant circuit, L is the inductance value in the first resonant circuit, and C is the capacitance value in the first resonant circuit. Since the inductance value of the first resonant circuit is equal to the sum of the first equivalent inductance and the second equivalent inductance, and the second equivalent inductance is the equivalent inductance of the half primary coil 31, which is generally a fixed value, when the first capacitor C21 is a fixed capacitor, the larger the first equivalent inductance, that is, the longer the length of the lead S3, the larger the inductance value L in the first resonant circuit, and therefore, the larger the inductance value L in the first resonant circuit, the smaller the resonant frequency point f0 of the first resonant circuit, so that the length of the lead S3 between the first capacitor C21 and the first balun 30 is negatively correlated with the operating frequency of the radio frequency push-pull power amplifier, that is, when the operating frequency of the radio frequency push-pull power amplifier is smaller, the longer lead S3 between the first capacitor C21 and the first balun 30 may be selected, and when the operating frequency of the radio frequency push-pull power amplifier is larger, the push-pull lead S3 between the first capacitor C21 and the first balun 30 may be selected.
In an embodiment, as shown in fig. 5, the first differential amplifying transistor 21 is a BJT transistor, and includes a base, a collector and an emitter, the base of the first differential amplifying transistor 21 receives an input first radio frequency input signal, the collector of the first differential amplifying transistor 21 is connected to a first pad a of the radio frequency push-pull power amplifier chip, the first pad a is bonded to a first input terminal of the first balun 30 by a wire S1, and the emitter of the first differential amplifying transistor 21 is grounded; the second differential amplifying transistor 22 is a BJT transistor and includes a base, a collector and an emitter, the base of the second differential amplifying transistor 22 receives an input second radio frequency input signal, the collector of the second differential amplifying transistor 22 is connected to a second pad b of the radio frequency push-pull power amplifier chip, the second pad b is bonded to the second input terminal of the first balun 30 by a wire S2, and the emitter of the second differential amplifying transistor 22 is grounded.
Specifically, a first radio frequency input signal is input to the base of the first differential amplifying transistor 21, and after being amplified by the first differential amplifying transistor 21, a first radio frequency amplified signal is output from the collector of the first differential amplifying transistor 21, and the first radio frequency amplified signal is transmitted to the first input terminal of the first balun 30 through the lead S1.
The second differential amplifying transistor 22 is a BJT transistor and includes a base, a collector and an emitter, the base of the second differential amplifying transistor 22 receives an input second radio frequency input signal, the collector of the second differential amplifying transistor 22 is connected to a second pad b of the radio frequency push-pull power amplifier chip, the second pad b is bonded to the second input terminal of the first balun 30 by a wire S2, and the emitter of the second differential amplifying transistor 22 is grounded.
Specifically, the second rf input signal is input to the base of the second differential amplifying transistor 22, and after being amplified by the second differential amplifying transistor 22, the second rf amplified signal is output from the collector of the second differential amplifying transistor 22, and the second rf amplified signal is transmitted to the second input terminal of the first balun 30 through the lead S2.
Further, after receiving the first radio frequency amplified signal and the second radio frequency amplified signal, the first balun 30 performs conversion processing on the first radio frequency amplified signal and the second radio frequency amplified signal, and inputs the first radio frequency amplified signal and the second radio frequency amplified signal after the conversion processing to the subsequent stage circuit.
In a specific embodiment, in an embodiment, a first end of the secondary coil of the first balun 30 outputs an amplified first radio frequency output signal, and a second end of the secondary coil outputs an amplified second radio frequency output signal; alternatively, a first end of the secondary coil of the first balun 30 outputs the amplified radio frequency output signal and a second end of the secondary coil is grounded.
In one embodiment, the radio frequency push-pull power amplifier chip may be a chip manufactured by using a GaAs, gaN, CMOS, or other processes.
The present embodiment provides a radio frequency push-pull power amplifying circuit, as shown in fig. 6, including a first differential amplifying transistor 21, a second differential amplifying transistor 22, a first capacitor, a first inductor L1, a second inductor L2, a third inductor L3, and a first balun 30. The output end of the first differential amplifying transistor 21 is connected to the first input end of the first balun 30 through a first inductor L1, and the output end of the second differential amplifying transistor 22 is connected to the second input end of the first balun 30 through a second inductor L2; a first end of the first capacitor is connected to the midpoint of the primary coil 31 of the first balun 30 through a third inductor L3, and a second end of the first capacitor is grounded; the first capacitor, the third inductor L3, and the first inductor L1 or the second inductor L2 are connected in series to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier.
Wherein the midpoint of the primary coil 31 is the center position of the primary coil 31, and the distance between the center position and the first input end of the primary coil 31 is equal to the distance between the center position and the second input end of the primary coil 31. For example, the midpoint of the primary coil 31 may be the location to which the center tap of the first balun 30 is connected.
The first differential amplifier transistor 21 and the second differential amplifier transistor 22 may be BJT transistors or Field Effect Transistors (FETs). Optionally, the first differential amplifying transistor 21 comprises at least one BJT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the first differential amplifying transistor 21 may be formed by connecting a plurality of BJT transistors in parallel. The second differential amplifying transistor 22 includes at least one BJT transistor (e.g., HBT transistor) or at least one field effect transistor. Illustratively, the second differential amplifying transistor 22 may be formed by connecting a plurality of BJT transistors in parallel.
In a specific embodiment, the first differential amplifying transistor 21 is configured to amplify a first radio frequency input signal to output a first radio frequency amplified signal, the first radio frequency amplified signal being coupled to a first terminal of the primary coil 31 of the first balun 30, and the second differential amplifying transistor 22 is configured to amplify a second radio frequency input signal to output a second radio frequency amplified signal, the second radio frequency amplified signal being coupled to a second terminal of the primary coil 31 of the first balun 30. The first rf input signal may be an rf signal output after being amplified by a corresponding pre-stage amplifying circuit, or may be one of balanced rf signals obtained by converting an unbalanced input rf signal. Similarly, the second rf input signal may also be an rf signal output after being amplified by the corresponding pre-stage amplifier circuit, or may also be one of balanced rf signals obtained by converting an unbalanced input rf signal.
It is understood that the first differential amplifying transistor 21 and the second differential amplifying transistor 22 are any amplifying stage in the radio frequency push-pull power amplifier chip, and the amplifying stage may be any amplifying stage in a driving stage, an intermediate stage or an output stage.
In a specific embodiment, the rf push-pull power amplifier chip further includes a pre-stage conversion circuit (not shown), for example: the preceding stage conversion circuit may be a preceding stage conversion balun. The pre-stage conversion balun is configured to convert an unbalanced radio frequency input signal into a balanced first radio frequency input signal and a balanced second radio frequency input signal, and input the first radio frequency input signal to an input terminal of the first differential amplifying transistor 21 and input the second radio frequency input signal to an input terminal of the second differential amplifying transistor 22.
In a specific embodiment, the output terminal of the first differential amplifying transistor 21 is connected to the first input terminal of the first balun 30 through a first inductor L1, and the output terminal of the second differential amplifying transistor 22 is connected to the second input terminal of the first balun 30 through a second inductor L2; a first end of the first capacitor is connected to the midpoint of the primary coil 31 of the first balun 30 through a third inductor L3, and a second end of the first capacitor is grounded; the first capacitor, the third inductor L3, and the first inductor L1 or the second inductor L2 are connected in series to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier. In the embodiment, the first resonant circuit is configured to resonate at an even harmonic frequency point of the radio frequency push-pull power amplification circuit, and the second resonant circuit is configured to resonate at a fundamental frequency point, so that the first resonant circuit adjusts an impedance point of even harmonics and the second resonant circuit suppresses a common-mode signal, or the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplification circuit and the second resonant circuit is configured to resonate at an even harmonic frequency point, so that the first resonant circuit suppresses a common-mode signal and the second resonant circuit adjusts an impedance point of even harmonics, thereby improving the adjustability of the impedance point of even harmonics and the common-mode signal suppression capability of the radio frequency push-pull power amplifier.
In one embodiment, as shown in fig. 7, the radio frequency push-pull power amplifying circuit further includes a feeding power supply terminal and a second capacitor C11; the output terminal of the first differential amplifying transistor 21 is connected to the feed power supply terminal through a fourth inductor L4; the output terminal of the second differential amplifying transistor 22 is connected to the feeding power supply terminal through a fifth inductor L5; a first end of the second capacitor C11 is connected with a feed power supply end, and a second end of the second capacitor C11 is connected with a ground end; the second capacitor C11 and the fourth inductor L4 or the fifth inductor L5 form a second resonant circuit configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplification circuit, or the second resonant circuit is configured to resonate at an even harmonic frequency point.
The power supply terminal VCC is a port connected to a power supply. In the present embodiment, a feeding signal provided by the feeding power supply is transmitted to the output terminal of the first differential amplifying transistor 21 and the output terminal of the second differential amplifying transistor 22 through the feeding power supply terminal VCC to ensure that the first differential amplifying transistor 21 and the second differential amplifying transistor 22 can operate normally. The output terminal of the first differential amplifying transistor 21 is connected to the feed power supply terminal through a fourth inductor L4; the output terminal of the second differential amplifying transistor 22 is connected to the feeding power supply terminal through the fifth inductor L5 to realize feeding of the first differential amplifying transistor 21 and the second differential amplifying transistor 22 through the feeding power supply terminal.
In a specific embodiment, the radio frequency push-pull power amplifying circuit further includes a second capacitor C11, a first end of the second capacitor C11 is connected to the power supply terminal of the feed, and a second end of the second capacitor C11 is connected to the ground terminal; the second capacitor C11 and the fourth inductor L4 or the fifth inductor L5 form a second resonant circuit configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplification circuit, or the second resonant circuit is configured to resonate at an even harmonic frequency point.
In one embodiment, the second capacitor C11 is a decoupling capacitor. In order to further ensure the stability of the feeding signal supplied from the feeding power supply terminal VCC to the first differential amplifying transistor 21 and the second differential amplifying transistor 22, the present application connects a second capacitor C11, one end of the second capacitor C11 is connected to the feeding power supply terminal VCC, and the other end is grounded. The present application can realize that the feeding signal is supplied to the first differential amplifying transistor 21 and the second differential amplifying transistor 22 by using one feeding power supply terminal VCC, and the stability of the feeding signal supplied to the first differential amplifying transistor 21 and the second differential amplifying transistor 22 can be ensured by one second capacitor C11 by connecting the second capacitor C11 to the feeding power supply terminal VCC.
In a specific embodiment, on the basis of the above embodiment, the first end of the second capacitor C11 is connected to the power supply end of the feed, and the second end of the second capacitor C11 is connected to the ground; the second capacitor C11 and the fourth inductor L4 or the fifth inductor L5 form a second resonant circuit configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier circuit, or the second resonant circuit is configured to resonate at an even harmonic frequency point, and the resonant frequency point of the second resonant circuit is different from that of the first resonant circuit, so that the first resonant circuit and the second resonant circuit can cooperate to realize frequency selection, for example, the first resonant circuit is configured to resonate at an even harmonic frequency point, the second resonant circuit is configured to resonate at a fundamental frequency point, so that the first resonant circuit adjusts an impedance point of even harmonic, so that the second resonant circuit suppresses a common mode signal, or the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier circuit, and the second resonant circuit is configured to resonate at an even harmonic frequency point, so that the first resonant circuit suppresses a common mode signal, and the second resonant circuit adjusts an impedance point of even harmonic, so that the ability of adjusting the impedance point of the push-pull power amplifier and the ability of suppressing the common mode signal are improved.
In a specific embodiment, the second capacitor C11 and the fourth inductor L4 can form a second resonant circuit, so that the second resonant circuit cooperates with the first resonant circuit to implement frequency selection, and the adjustment capability of the impedance point of the even harmonic of the radio frequency push-pull power amplifier and the common mode signal rejection capability are improved.
In another specific embodiment, the second capacitor C11 is connected in series with the fifth inductor L5 to form a second resonant circuit, so that the second resonant circuit is matched with the first resonant circuit to implement frequency selection, and the adjustment capability of the impedance point of the even harmonic of the radio frequency push-pull power amplifier and the common mode signal rejection capability are improved.
The present embodiment provides a radio frequency front end module, which includes the radio frequency push-pull power amplifier in the foregoing embodiment, or includes the radio frequency push-pull power amplifier circuit in the foregoing embodiment.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (15)
1. The radio frequency push-pull power amplifier is characterized by comprising a substrate, a radio frequency push-pull power amplification chip arranged on the substrate, and a first balun arranged on the substrate; the radio frequency push-pull power amplification chip comprises a first differential amplification transistor, a second differential amplification transistor and a first capacitor, wherein the output end of the first differential amplification transistor is connected with the first input end of the first balun; the output end of the second differential amplifying transistor is connected with the second input end of the first balun; the first end of the first capacitor is connected to a third bonding pad of the radio frequency push-pull power amplifier chip, the third bonding pad is bonded to the middle point of the primary coil of the first balun through a wire, and the second end of the first capacitor is grounded.
2. The radio frequency push-pull power amplifier of claim 1, wherein an output of the first differential amplification transistor is connected to a first pad of the radio frequency push-pull power amplification chip, the first pad being wire bonded to a first input of the first balun; the output end of the second differential amplification transistor is connected to a second bonding pad of the radio frequency push-pull power amplification chip, and the second bonding pad is bonded to the second input end of the first balun through a lead.
3. The radio frequency push-pull power amplifier according to claim 2, further comprising a feeding power supply terminal disposed on the substrate; the output end of the first differential amplification transistor is connected to a fourth bonding pad of the push-pull power amplification chip, and the fourth bonding pad is bonded to the feeding power supply end through a lead; the output end of the second differential amplification transistor is connected to a fifth bonding pad of the push-pull power amplification chip, and the fifth bonding pad is bonded to the feeding power supply end through a lead.
4. The radio frequency push-pull power amplifier according to claim 3, further comprising a second capacitor, a first terminal of the second capacitor being connected to the feed power supply terminal, and a second terminal of the second capacitor being connected to a ground terminal.
5. The radio frequency push-pull power amplifier of claim 4, wherein the first capacitance and/or the second capacitance is an adjustable capacitance.
6. The radio frequency push-pull power amplifier of claim 4, wherein the primary coil of the first balun includes a first primary coil segment and a second primary coil segment, the first pad is wire bonded to a first end of the first primary coil segment, a second end of the first primary coil segment is connected to a first end of the second primary coil segment, the second pad is wire bonded to a second end of the second primary coil segment, a first end of the first capacitor is connected to a third pad of the radio frequency push-pull power amplifier chip, the third pad is wire bonded between the first primary coil segment and the second primary coil segment, and a second end of the first capacitor is grounded.
7. The radio frequency push-pull power amplifier of claim 6, wherein a lead between the first capacitance and the primary coil forms a first equivalent inductance, and one-half of the primary coil forms a second equivalent inductance; the first capacitor, the first equivalent inductor and the second equivalent inductor are connected in series to form a first resonant circuit;
a lead between the second capacitor and the output end of the differential amplification transistor forms a third equivalent inductor; or a lead between the second capacitor and the output end of the second differential amplification transistor forms the third equivalent inductor;
the second capacitor is connected with the third equivalent inductor in series to form a second resonant circuit;
the first resonant circuit and the second resonant circuit have different resonant frequency points.
8. The radio frequency push-pull power amplifier of claim 7, wherein the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier and the second resonant circuit is configured to resonate at an even harmonic frequency point; alternatively, the first resonant circuit is configured to resonate at an even harmonic frequency point and the second resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier.
9. The radio frequency push-pull power amplifier of claim 8, wherein the even harmonic frequency points are second harmonic frequency points.
10. The radio frequency push-pull power amplifier of claim 1, wherein a length of a lead between the first capacitance and the first balun is inversely related to an operating frequency of the radio frequency push-pull power amplifier.
11. The radio frequency push-pull power amplifier according to claim 1, wherein the first differential amplifying transistor is a BJT transistor and comprises a base, a collector and an emitter, the base of the first differential amplifying transistor receives an input first radio frequency input signal, the collector of the first differential amplifying transistor is connected to a first pad of the radio frequency push-pull power amplifier chip, the first pad is bonded to the first input end of the first balun through a wire, and the emitter of the first differential amplifying transistor is grounded;
the second differential amplification transistor is a BJT (bipolar junction transistor) and comprises a base electrode, a collector electrode and an emitter electrode, the base electrode of the second differential amplification transistor receives an input second radio-frequency input signal, the collector electrode of the second differential amplification transistor is connected to a second bonding pad of the radio-frequency push-pull power amplifier chip, the second bonding pad is bonded to the second input end of the first balun through a lead, and the emitter electrode of the second differential amplification transistor is grounded.
12. The radio frequency push-pull power amplifier of claim 1, wherein a first end of the secondary coil of the first balun outputs an amplified first radio frequency output signal and a second end of the secondary coil outputs an amplified second radio frequency output signal; or a first end of the secondary coil of the first balun outputs the amplified radio frequency output signal, and a second end of the secondary coil is grounded.
13. A radio frequency push-pull power amplification circuit is characterized by comprising a first differential amplification transistor, a second differential amplification transistor, a first capacitor, a first inductor, a second inductor, a third inductor and a first balun; the output end of the first differential amplifying transistor is connected to the first input end of the first balun through the first inductor, and the output end of the second differential amplifying transistor is connected to the second input end of the first balun through the second inductor; the first end of the first capacitor is connected to the midpoint of the primary coil of the first balun through the third inductor, and the second end of the first capacitor is grounded;
the first capacitor, the third inductor, and the first inductor or the second inductor are connected in series to form a first resonant circuit, and the first resonant circuit is configured to resonate at an even harmonic frequency point, or the first resonant circuit is configured to resonate at a fundamental frequency point of the radio frequency push-pull power amplifier.
14. The radio frequency push-pull power amplifier circuit as claimed in claim 13, wherein the radio frequency push-pull power amplifier further comprises a feed power supply terminal and a second capacitor; the output end of the first differential amplification transistor is connected to the feed power supply end through a fourth inductor; the output end of the second differential amplification transistor is connected to the feed power supply end through a fifth inductor; the first end of the second capacitor is connected with the power supply end of the feed, and the second end of the second capacitor is connected with the ground end;
the second capacitor and the fourth inductor or the fifth inductor form a second resonant circuit, and the second resonant circuit is configured to be resonant at a fundamental frequency point of the radio frequency push-pull power amplifier, or the second resonant circuit is configured to be resonant at an even harmonic frequency point.
15. A radio frequency front end module comprising a radio frequency push-pull power amplifier according to any of claims 1-12 or comprising a radio frequency push-pull power amplifying circuit according to any of claims 13-14.
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|---|---|---|---|---|
| CN117749116A (en) * | 2023-12-04 | 2024-03-22 | 锐磐微电子科技(上海)有限公司 | Radio frequency front end module |
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| DE10259338A1 (en) * | 2002-12-18 | 2004-07-22 | Infineon Technologies Ag | Monolithic integrated circuit power amplifier, e.g. for portable radio equipment, has LC balun with matching network presenting definable impedance to output of amplifier circuit |
| CN108270407A (en) * | 2016-12-30 | 2018-07-10 | 通用电气公司 | A kind of planar Balun and a kind of multilayer circuit board |
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
| US20210135639A1 (en) * | 2019-11-04 | 2021-05-06 | Nxp Usa, Inc. | Radio frequency (rf) amplifier |
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| DE10259338A1 (en) * | 2002-12-18 | 2004-07-22 | Infineon Technologies Ag | Monolithic integrated circuit power amplifier, e.g. for portable radio equipment, has LC balun with matching network presenting definable impedance to output of amplifier circuit |
| CN108270407A (en) * | 2016-12-30 | 2018-07-10 | 通用电气公司 | A kind of planar Balun and a kind of multilayer circuit board |
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
| US20210135639A1 (en) * | 2019-11-04 | 2021-05-06 | Nxp Usa, Inc. | Radio frequency (rf) amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117749116A (en) * | 2023-12-04 | 2024-03-22 | 锐磐微电子科技(上海)有限公司 | Radio frequency front end module |
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