CN115911217A - Preparation method of display substrate, display substrate and display device - Google Patents
Preparation method of display substrate, display substrate and display device Download PDFInfo
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- CN115911217A CN115911217A CN202211408278.3A CN202211408278A CN115911217A CN 115911217 A CN115911217 A CN 115911217A CN 202211408278 A CN202211408278 A CN 202211408278A CN 115911217 A CN115911217 A CN 115911217A
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Abstract
The application provides a preparation method of a display substrate, the display substrate and a display device, and relates to the technical field of display. The preparation method comprises the following steps: the method comprises the steps of obtaining a substrate, arranging a set identifier and a plurality of micro light-emitting chips on the substrate, and arranging the micro light-emitting chips in an array according to the position of the set identifier; arranging a light-blocking layer on the substrate to cover the set mark and the plurality of micro light-emitting chips, wherein the light-blocking layer is made of positive photoresist; processing a first preset area of the light-blocking layer to expose a set mark, wherein the first preset area is arranged corresponding to the set mark; setting a second preset area on the light-blocking layer according to the position of the set mark, wherein the second preset area is arranged corresponding to the plurality of micro light-emitting chips; and processing the light blocking layer of the second preset area to expose the plurality of micro light-emitting chips. The preparation method of the display substrate can improve the improvement effect of optical crosstalk and improve the aperture opening ratio of the micro light-emitting chip.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a method for manufacturing a display substrate, and a display device.
Background
In recent years, micro Light Emitting Diode (Micro LED) display technology has received much attention in the industry because of its significant advantages in terms of brightness, contrast, lifetime, response time, and the like. However, micro LED technology still presents some challenges, and due to the large light emission viewing angle, there is a large risk of light crosstalk between adjacent pixels, which has a negative impact on the display color gamut of the display. At present, a matrix is formed by adopting a light blocking material, light entering the matrix is delusted, and light emitting pixel points are isolated from each other, so that light crosstalk between adjacent pixels is improved. However, the improvement effect of the optical crosstalk in the related art is not good.
Disclosure of Invention
In view of this, the present application provides the following technical solutions:
a method for preparing a display substrate comprises the following steps:
the method comprises the steps of obtaining a substrate, arranging a set identifier and a plurality of micro light-emitting chips on the substrate, and arranging the micro light-emitting chips in an array according to the position of the set identifier;
arranging a light blocking layer on the substrate to cover the set mark and the plurality of micro light-emitting chips, wherein the light blocking layer is made of positive photoresist;
processing a first preset area of the light-blocking layer to expose the set identifier, wherein the first preset area is arranged corresponding to the set identifier;
setting a second preset area on the light-blocking layer according to the position of the set mark, wherein the second preset area is arranged corresponding to the plurality of micro light-emitting chips;
and processing the light blocking layer of the second preset area to expose the plurality of micro light-emitting chips.
In some embodiments of the present application, the method of setting the setting indicator and the plurality of micro light emitting chips includes:
and arranging the set marks in the edge area of the substrate, and arranging the plurality of micro light-emitting chips in the central area of the substrate in an array manner by adopting a mask according to the positions of the set marks.
In some embodiments of the present application, a method of processing the first preset area includes:
and carrying out edge exposure and development on the first preset area of the light-blocking layer to expose the set mark.
In some embodiments of the present application, a method of processing the first preset area includes:
and exposing and developing the first preset area of the light-blocking layer by adopting a mask plate to expose the set mark.
In some embodiments of the present application, the method of processing the light blocking layer of the second preset area includes:
and exposing and developing the light-blocking layer of the second preset area according to the position of the set mark to expose the plurality of micro light-emitting chips.
In some embodiments of the present application, a method of setting the second preset area includes:
and setting the second preset area on the light blocking layer by using a mask according to the position of the set mark so as to enable the second preset area to be arranged corresponding to the plurality of micro light-emitting chips.
In some embodiments of the present application, after the light blocking layer of the second predetermined area is processed, the micro light emitting chips are bonded to a circuit substrate, and the substrate is peeled off.
In some embodiments of the present application, the light blocking layer is made of black photoresist.
In a second aspect, the present application further provides a display substrate obtained by the preparation method as described above.
In a third aspect, the present application also provides a display device comprising the display substrate as described above.
The embodiment of the application has the following advantages:
compared with the poor improvement effect of the optical crosstalk in the related technology, the preparation method of the display substrate is provided, and the light blocking layer made of the positive photoresist is arranged on the substrate to cover the set mark and the plurality of micro light-emitting chips on the substrate. The first preset area is arranged corresponding to the set mark, and the first preset area of the light blocking layer is removed through processing to expose the set mark. The exposure machine can conveniently and accurately grab the set mark, second preset areas corresponding to the positions of the micro light-emitting chips are accurately arranged on the light-blocking layer according to the positions of the set mark, the second preset areas of the light-blocking layer are removed through processing to expose the micro light-emitting chips, the light-blocking layer which is not removed forms a light-blocking layer matrix to fill grooves between the adjacent micro light-emitting chips, light emitted between the adjacent micro light-emitting chips is isolated from each other, and therefore light crosstalk between the adjacent micro light-emitting chips is improved. The first preset area of the light blocking layer is removed through processing to expose the set mark, so that the exposure machine can accurately grab the set mark, the alignment precision of the second preset area and the plurality of micro light-emitting chips is improved, the offset of the prepared light blocking layer matrix is reduced, the improvement effect of optical crosstalk can be improved, and the aperture opening ratio of the micro light-emitting chips can be improved. In addition, the performance requirement of the alignment exposure machine can be reduced, so that the display substrate preparation method can be suitable for more exposure machines, and the universality of the display substrate preparation method is improved.
In order to make the aforementioned objects, features and advantages of the present application more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 illustrates a schematic flow chart of a method of fabricating a display substrate in some embodiments of the present application;
FIG. 2 illustrates a first schematic top view of a display substrate in some embodiments of the present application;
FIG. 3 illustrates a first schematic cross-sectional view of a display substrate in some embodiments of the present application;
FIG. 4 illustrates a second schematic top view of a display substrate in some embodiments of the present application;
FIG. 5 illustrates a second cross-sectional view of a display substrate in some embodiments of the present application;
FIG. 6 illustrates a top view schematic diagram three of a display substrate in some embodiments of the present application;
FIG. 7 illustrates a third schematic cross-sectional view of a display substrate in some embodiments of the present application;
FIG. 8 illustrates a top view schematic diagram four of a display substrate in some embodiments of the present application;
FIG. 9 illustrates a fourth schematic cross-sectional view of a display substrate in some embodiments of the present application;
FIG. 10 illustrates a top schematic view of a display substrate in some embodiments of the present application;
FIG. 11 illustrates a schematic cross-sectional view of a fifth display substrate in some embodiments of the present application;
FIG. 12 illustrates a top schematic view six of a display substrate in some embodiments of the present application;
FIG. 13 illustrates a schematic cross-sectional diagram six of a display substrate in some embodiments of the present application.
Description of the main element symbols:
100-a display substrate; 10-a substrate; 20-setting the identification; 30-a micro light-emitting chip; 40-a light-blocking layer; 401 — a first preset area; 402-a second predetermined area.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral parts; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the templates is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The inventors of the present application found that in order to improve the optical crosstalk problem in Micro LEDs in the related art, it is common to prepare a black matrix on the basis of at least one layer pattern, and the black matrix may be in the position of at least one of the following: pixel point channels, and the periphery of the screen outside the display region. The specific process comprises the following steps: and coating a black photoresist on the whole surface of at least one layer of pattern, and exposing and developing to obtain a black matrix. Wherein, the alignment exposure machine uses a CCD lens for detecting reflected light to grab the front layer positioning Mark (usually arranged at the edge of the panel) to determine the position relationship between the front layer and the layer. For reasons of productivity, the black photoresist is coated over the entire surface. Because the light transmittance of the black photoresist is low, the reflected light of the positioning Mark covered by the black photoresist is weak, and the alignment exposure machine is difficult to grab the positioning Mark, the alignment precision is low, and the offset of the prepared black matrix is overlarge. There is a problem in that at least one of the following: 1) The improvement effect of the optical crosstalk is not good; 2) The aperture ratio is reduced because the black photoresist is shifted to the display region.
As shown in fig. 1, the present invention is directed to solving the technical problem of poor improvement effect of optical crosstalk in the related art. Embodiments of the present application provide a method of manufacturing a display substrate 100. The preparation method comprises the following steps:
as shown in fig. 2 and 3, step S1: the method comprises the steps of obtaining a substrate 10, arranging a setting mark 20 and a plurality of micro light-emitting chips 30 on the substrate 10, and arranging the micro light-emitting chips 30 in an array according to the position of the setting mark 20.
Specifically, the substrate 10 may be made of glass or sapphire. The setting Mark 20 is arranged on the substrate 10, the setting Mark 20 can be made by silk screen printing, etching or laser engraving, the setting Mark 20 plays a role in providing positioning for subsequent process steps, and the setting Mark 20 is positioning Mark. The setting marks 20 are arranged so that a plurality of micro light emitting chips 30 are arranged in an array on the substrate 10 according to the positions of the setting marks 20.
As shown in fig. 4 and 5, step S2: a light blocking layer 40 is disposed on the substrate 10 to cover the setting mark 20 and the plurality of micro light emitting chips 30, wherein the light blocking layer 40 is made of a positive photoresist.
Specifically, the setting mark 20 and the plurality of micro light-emitting chips 30 on the substrate 10 are covered by disposing the light-blocking layer 40 on the entire surface of the substrate 10, so that after the light-blocking layer 40 at the corresponding position of the setting mark 20 and the plurality of micro light-emitting chips 30 is removed, the light-blocking layer 40 which is not removed forms a matrix of the light-blocking layer 40 to fill the grooves between the adjacent micro light-emitting chips 30, and light emitted between the adjacent micro light-emitting chips 30 is isolated from each other, so as to improve the problem of optical crosstalk between the adjacent micro light-emitting chips 30. The light blocking layer 40 is made of a positive photoresist to block light, so that the problem of optical crosstalk between adjacent micro light emitting chips 30 is solved. Illustratively, the positive photoresist may be a black positive photoresist.
The positive photoresist has a feature of being extinguished by visible light, and is removed by reaction in a developer after being irradiated with ultraviolet light.
As shown in fig. 6, 7, 8, and 9, step S3: processing a first preset area 401 of the light blocking layer 40 to expose the setting mark 20, where the first preset area 401 is arranged corresponding to the setting mark 20.
Specifically, the first preset region 401 is disposed corresponding to the setting indicator 20, and the first preset region 401 of the light blocking layer 40 is removed by processing to expose the setting indicator 20. Therefore, the subsequent exposure machine can accurately grab the set mark 20, the second preset area 402 is accurately arranged on the light blocking layer 40 according to the position of the set mark 20, the second preset area 402 is accurately arranged corresponding to the micro light emitting chips 30, the light blocking layer 40 of the second preset area 402 can be removed through subsequent processing, the micro light emitting chips 30 are exposed, the light blocking layer 40 which is not removed forms a light blocking layer 40 matrix to fill the grooves between the adjacent micro light emitting chips 30, light emitted between the adjacent micro light emitting chips 30 is isolated from each other, and light crosstalk between the adjacent micro light emitting chips 30 is improved. The alignment precision is improved, the offset of the prepared light blocking layer 40 matrix is reduced, the improvement effect of optical crosstalk is further improved, and the aperture opening ratio of the micro light-emitting device prepared by the micro light-emitting chip 30 is increased.
As shown in fig. 10, 11, 12, and 13, step S4: and setting a second preset area 402 on the light blocking layer 40 according to the position of the setting mark 20, wherein the second preset area 402 is arranged corresponding to the plurality of micro light-emitting chips 30.
Specifically, after the first preset region 401 of the light blocking layer 40 is removed by processing to expose the setting mark 20, the exposure machine can conveniently and accurately grasp the setting mark 20, and accurately set a second preset region 402 corresponding to the positions of the plurality of micro light emitting chips 30 on the light blocking layer 40 according to the position of the setting mark 20, so that the second preset region 402 of the light blocking layer 40 can be removed by processing subsequently to expose the plurality of micro light emitting chips 30.
As shown in fig. 10, 11, 12, and 13, step S5: the light blocking layer 40 of the second predetermined area 402 is processed to expose the micro light emitting chips 30.
Specifically, the second preset area 402 of the light blocking layer 40 is removed through processing to expose the plurality of micro light-emitting chips 30, and the light blocking layer 40 that is not removed forms a matrix of the light blocking layer 40 to fill the trenches between the adjacent micro light-emitting chips 30, so that the light emitted between the adjacent micro light-emitting chips 30 is isolated from each other, thereby improving the optical crosstalk between the adjacent micro light-emitting chips 30. The light blocking layer 40 of the first preset area 401 is removed through processing to expose the set mark 20, so that the exposure machine can accurately grab the set mark 20, the alignment precision of the second preset area 402 and the plurality of micro light-emitting chips 30 is improved, the offset of the prepared light blocking layer 40 matrix is reduced, and the improvement effect of optical crosstalk and the aperture opening ratio of the micro light-emitting chips 30 are improved. In other words, the embodiment of the application can improve the technical problems that in the related art, the alignment exposure machine is difficult to grasp the positioning Mark, the alignment precision is not high, the offset of the prepared black matrix is large, the improvement effect of the optical crosstalk is weakened, and the aperture ratio is reduced.
It should be noted that the reason why the alignment exposure machine is difficult to grasp the positioning Mark may be that the reflected light of the positioning Mark is weak due to the reason that the light-blocking layer has a large thickness and good extinction performance; or the specification of the alignment exposure machine is limited; a combination of the two is also possible. In other words, the performance requirement of the alignment exposure machine can be reduced, so that the display substrate preparation method can be suitable for more exposure machines, and the universality of the display substrate preparation method is improved.
Fig. 6, 7, 10, and 11 are drawings of the same embodiment, and fig. 8, 9, 12, and 13 are drawings of another embodiment. Fig. 2 and 3, fig. 4 and 5, fig. 6 and 7, fig. 8 and 9, fig. 10 and 11, and fig. 12 and 13 are two views corresponding to the same structural combination, respectively.
As shown in fig. 4 and 5, in an embodiment of the present application, optionally, in step S2, a method for disposing the light blocking layer 40 includes the steps of:
step S21: and coating a layer of the light-blocking layer 40 on the substrate 10, and drying the light-blocking layer 40.
In one embodiment of the present application, the light blocking layer 40 may be obtained by a coating method such as spin coating or blade coating.
In practice, a layer of light blocking layer 40 may be spin-coated on the entire surface of the substrate 10 by a spin coater, and the light blocking layer 40 is dried by a drying process to form the light blocking layer 40 covering the setting mark 20 and the plurality of micro light emitting chips 30. Illustratively, the light blocking layer 40 may be made of black positive photoresist.
As shown in fig. 2 and 3, in an embodiment of the present application, optionally, in step S1, a method for setting the setting indicator 20 and the plurality of micro light emitting chips 30 includes the steps of:
step S11: the setting marks 20 are arranged in the edge area of the substrate 10, and a plurality of the micro light emitting chips 30 are arranged in the center area of the substrate 10 in an array manner by using a mask according to the positions of the setting marks 20.
Specifically, the setting mark 20 is arranged in the edge region of the substrate 10, so that the setting mark 20 can be exposed by the edge exposure process of the exposure machine, a mask can be saved by the edge exposure process, the cost is effectively reduced, and the process flow is simplified. The plurality of micro light-emitting chips 30 are arranged in the central area of the substrate 10 in an array manner by using the mask according to the position of the setting mark 20, so that the subsequent exposure machine can accurately set the second preset area 402 corresponding to the plurality of micro light-emitting chips 30 by using the mask according to the position of the setting mark 20, the alignment precision of the second preset area 402 and the micro light-emitting chips 30 is improved, the offset of the prepared light blocking layer 40 matrix is reduced, and the improvement effect of optical crosstalk and the aperture ratio of the micro light-emitting chips 30 are improved.
As shown in fig. 6, 7, 8 and 9, in the above embodiment of the present application, optionally, in step S3, the method for processing the first preset area 401 includes the steps of:
step S31: the first preset area 401 of the light blocking layer 40 is edge exposed and developed to expose the setting indicator 20.
Specifically, the edge exposure is performed on the first preset area 401 of the light blocking layer 40 through the edge exposure process of the exposure machine, the exposed first preset area 401 of the light blocking layer 40 is removed through development of the developing solution, so that the set mark 20 is exposed, the subsequent exposure machine can accurately grab the set mark 20, the alignment precision is improved, the offset of the matrix of the light blocking layer 40 is reduced, and the improvement effect of optical crosstalk and the aperture opening ratio of the micro light emitting chip 30 are improved. By adopting the edge exposure process, one mask can be opened less, the cost is effectively reduced, and the process flow is simplified.
As shown in fig. 6, fig. 7, fig. 8 and fig. 9, in the above embodiment of the present application, optionally, in step S3, the method for processing the first preset area 401 includes the steps of:
step S32: and exposing and developing the first preset area 401 of the light-blocking layer 40 by using a mask to expose the setting mark 20.
Specifically, the first preset area 401 of the light blocking layer 40 is exposed by using a mask plate, and the exposed first preset area 401 of the light blocking layer 40 is removed by developing with a developing solution to expose the set mark 20, so that the set mark 20 can be accurately captured by a subsequent exposure machine, the alignment precision is improved, the offset of the matrix of the light blocking layer 40 is reduced, and the improvement effect of optical crosstalk and the aperture opening ratio of the micro light emitting chip 30 are improved.
As shown in fig. 10, 11, 12 and 13, in an embodiment of the present application, optionally, in step S5, a method for processing the light blocking layer 40 of the second preset area 402 includes the steps of:
step S51: the light blocking layer 40 of the second preset area 402 is exposed and developed according to the position of the setting indicator 20 to expose the plurality of micro light emitting chips 30.
Specifically, the light blocking layer 40 of the second preset area 402 is exposed and developed according to the position of the setting mark 20 to remove the light blocking layer 40 of the second preset area 402, so that the plurality of micro light emitting chips 30 are exposed, the light blocking layer 40 which is not removed forms a light blocking layer 40 matrix to fill the groove between the adjacent micro light emitting chips 30, the light emitted between the adjacent micro light emitting chips 30 is isolated from each other, and the optical crosstalk between the adjacent micro light emitting chips 30 is improved. Specifically, the light blocking layer 40 of the second preset area 402 is exposed by an exposure machine, and is developed by using a developing solution to remove the light blocking layer 40 of the second preset area 402, so that the plurality of micro light emitting chips 30 are exposed.
As shown in fig. 10, fig. 11, fig. 12 and fig. 13, in an embodiment of the present application, optionally, in step S4, the method for setting the second preset area 402 includes the steps of:
step S41: and setting the second preset area 402 on the light blocking layer 40 by using a mask according to the position of the setting mark 20, so that the second preset area 402 corresponds to the plurality of micro light emitting chips 30.
Specifically, the setting marks 20 are disposed on the edge region of the substrate 10, and the plurality of micro light emitting chips 30 are arranged in an array on the center region of the substrate 10 by using a mask according to the positions of the setting marks 20. The second preset region 402 is accurately arranged on the light-blocking layer 40 by adopting a mask according to the position of the set identifier 20, so that the second preset region 402 and the plurality of micro light-emitting chips 30 are accurately arranged in an alignment manner, the offset of the prepared light-blocking layer 40 matrix is reduced, and the improvement effect of optical crosstalk and the aperture opening ratio of the micro light-emitting chips 30 are improved.
In an embodiment of the present application, optionally, after the step of processing the light-blocking layer 40 of the second preset area 402, the method further includes the steps of:
step S6: bonding a plurality of the micro light emitting chips 30 to a circuit substrate, and peeling the substrate 10.
Specifically, the plurality of micro light-emitting chips 30 are bonded to the circuit board, and the substrate 10 is peeled off, so that the plurality of micro light-emitting chips 30 are electrically conducted with the circuit board substrate, thereby implementing the driving display function of the display substrate 100.
In an embodiment of the present application, the light blocking layer 40 is made of black photoresist, so as to block light, thereby improving the optical crosstalk between adjacent micro light emitting chips 30.
Illustratively, the material of the light blocking layer 40 may be black positive photoresist, which has the characteristic of disappearance of visible light and is removed in a developer after being irradiated by ultraviolet light.
The embodiment of the present application further provides a display substrate 100, where the display substrate 100 is obtained by the preparation method in the above embodiment.
Specifically, the display substrate 100 may be a micro light emitting diode display substrate 100, and may also be a thin film transistor display substrate 100.
It should be noted that, since the display substrate 100 and the embodiment of the manufacturing method of the present application are based on the same concept, specific functions and technical effects thereof can be found in the embodiment of the manufacturing method, and are not described herein again.
The embodiment of the present application further provides a display device, which includes the display substrate 100 in the above embodiment.
Specifically, the display device may be a micro light emitting diode display, and may also be a thin film transistor display.
The display device has the display substrate 100 in any of the embodiments, so that the display device has the beneficial effects of the display substrate 100, which are not described herein again.
In summary, according to the method for manufacturing the display substrate provided by the application, the light blocking layer made of the positive photoresist is arranged on the substrate to cover the setting mark and the plurality of micro light emitting chips on the substrate. The first preset area is arranged corresponding to the set mark, and the first preset area of the light blocking layer is removed through processing, so that the set mark is exposed. The exposure machine can conveniently and accurately grab the set mark, second preset areas corresponding to the positions of the micro light-emitting chips are accurately arranged on the light-blocking layer according to the position of the set mark, the second preset areas of the light-blocking layer are removed through processing to expose the micro light-emitting chips, the light-blocking layer which is not removed forms a light-blocking layer matrix to fill grooves between the adjacent micro light-emitting chips, light emitted between the adjacent micro light-emitting chips is isolated from each other, and therefore optical crosstalk between the adjacent micro light-emitting chips is improved. The first preset area of the light blocking layer is removed through processing so as to expose the set mark, the exposure machine can accurately grab the set mark, the alignment precision of the second preset area and the plurality of micro light emitting chips is improved, the offset of the prepared light blocking layer matrix is reduced, and the improvement effect of optical crosstalk and the aperture opening ratio of the micro light emitting chips are improved. The technical problems that in the related technology, the alignment exposure machine is difficult to grasp the positioning Mark, so that the alignment precision is not high, the offset of the prepared black matrix is too large, the improvement effect of the optical crosstalk is weakened, and the aperture opening ratio of the pixel is reduced are solved.
In all examples shown and described herein, any particular value should be construed as exemplary only and not as a limitation, and thus other examples of example embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application.
Claims (10)
1. A method for manufacturing a display substrate, comprising:
the method comprises the steps of obtaining a substrate, arranging a set identifier and a plurality of micro light-emitting chips on the substrate, and arranging the micro light-emitting chips in an array according to the position of the set identifier;
arranging a light blocking layer on the substrate to cover the set mark and the plurality of micro light-emitting chips, wherein the light blocking layer is made of positive photoresist;
processing a first preset area of the light-blocking layer to expose the set identifier, wherein the first preset area is arranged corresponding to the set identifier;
setting a second preset area on the light-blocking layer according to the position of the set mark, wherein the second preset area is arranged corresponding to the plurality of micro light-emitting chips;
and processing the light blocking layer of the second preset area to expose the plurality of micro light-emitting chips.
2. The method for manufacturing the light emitting device according to claim 1, wherein the method for providing the setting mark and the plurality of micro light emitting chips comprises:
and arranging the setting marks in the edge area of the substrate, and arranging the micro light-emitting chips in the central area of the substrate in an array manner by adopting a mask according to the positions of the setting marks.
3. The method for preparing according to claim 2, wherein the method for processing the first preset area comprises:
and carrying out edge exposure and development on the first preset area of the light-blocking layer to expose the set mark.
4. The method for preparing according to claim 2, wherein the method for processing the first preset area comprises:
and exposing and developing the first preset area of the light-blocking layer by adopting a mask to expose the set mark.
5. The method for preparing a liquid crystal display device according to claim 1, wherein the step of processing the light blocking layer of the second predetermined area comprises:
and exposing and developing the light-blocking layer of the second preset area according to the position of the set mark to expose the plurality of micro light-emitting chips.
6. The method for preparing according to claim 1, wherein the method for setting the second preset region comprises:
and setting the second preset area on the light blocking layer by using a mask according to the position of the set mark so as to enable the second preset area to be arranged corresponding to the plurality of micro light-emitting chips.
7. The method according to claim 1, wherein the light blocking layer of the second predetermined region is processed, and then the micro light emitting chips are bonded to a circuit board, and the substrate is peeled off.
8. The method according to any one of claims 1 to 7, wherein the light blocking layer is made of black photoresist.
9. A display substrate obtained by the production method according to any one of claims 1 to 8.
10. A display device, characterized in that it comprises a display substrate as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211408278.3A CN115911217A (en) | 2022-11-10 | 2022-11-10 | Preparation method of display substrate, display substrate and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211408278.3A CN115911217A (en) | 2022-11-10 | 2022-11-10 | Preparation method of display substrate, display substrate and display device |
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| CN115911217A true CN115911217A (en) | 2023-04-04 |
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| CN202211408278.3A Pending CN115911217A (en) | 2022-11-10 | 2022-11-10 | Preparation method of display substrate, display substrate and display device |
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