CN115895800A - Semi-aqueous wafer substrate cleaning solution composition and application method thereof - Google Patents
Semi-aqueous wafer substrate cleaning solution composition and application method thereof Download PDFInfo
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- CN115895800A CN115895800A CN202211610138.4A CN202211610138A CN115895800A CN 115895800 A CN115895800 A CN 115895800A CN 202211610138 A CN202211610138 A CN 202211610138A CN 115895800 A CN115895800 A CN 115895800A
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- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000004140 cleaning Methods 0.000 title claims abstract description 50
- 239000000203 mixture Substances 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 24
- 229920000642 polymer Polymers 0.000 claims abstract description 22
- -1 alcohol amine Chemical class 0.000 claims abstract description 17
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 14
- 239000003112 inhibitor Substances 0.000 claims abstract description 9
- 239000003495 polar organic solvent Substances 0.000 claims abstract description 7
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- 238000002791 soaking Methods 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 claims description 6
- PGSWEKYNAOWQDF-UHFFFAOYSA-N 3-methylcatechol Chemical compound CC1=CC=CC(O)=C1O PGSWEKYNAOWQDF-UHFFFAOYSA-N 0.000 claims description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 4
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 claims description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- ZTHYODDOHIVTJV-UHFFFAOYSA-N Propyl gallate Chemical compound CCCOC(=O)C1=CC(O)=C(O)C(O)=C1 ZTHYODDOHIVTJV-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- VFPFQHQNJCMNBZ-UHFFFAOYSA-N ethyl gallate Chemical compound CCOC(=O)C1=CC(O)=C(O)C(O)=C1 VFPFQHQNJCMNBZ-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 4
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 claims description 4
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 4
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 4
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 claims description 4
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 claims description 3
- LSFYCRUFNRBZNC-UHFFFAOYSA-N (2-hydroxyphenyl) acetate Chemical compound CC(=O)OC1=CC=CC=C1O LSFYCRUFNRBZNC-UHFFFAOYSA-N 0.000 claims description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GLDQAMYCGOIJDV-UHFFFAOYSA-N 2,3-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1O GLDQAMYCGOIJDV-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- YQUVCSBJEUQKSH-UHFFFAOYSA-N 3,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C(O)=C1 YQUVCSBJEUQKSH-UHFFFAOYSA-N 0.000 claims description 2
- RYHGQTREHREIBC-UHFFFAOYSA-N 3,4-dimethylbenzene-1,2-diol Chemical compound CC1=CC=C(O)C(O)=C1C RYHGQTREHREIBC-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 claims description 2
- ZBCATMYQYDCTIZ-UHFFFAOYSA-N 4-methylcatechol Chemical compound CC1=CC=C(O)C(O)=C1 ZBCATMYQYDCTIZ-UHFFFAOYSA-N 0.000 claims description 2
- XESZUVZBAMCAEJ-UHFFFAOYSA-N 4-tert-butylcatechol Chemical compound CC(C)(C)C1=CC=C(O)C(O)=C1 XESZUVZBAMCAEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004262 Ethyl gallate Substances 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- 229940027987 antiseptic and disinfectant phenol and derivative Drugs 0.000 claims description 2
- XOPOEBVTQYAOSV-UHFFFAOYSA-N butyl 3,4,5-trihydroxybenzoate Chemical compound CCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 XOPOEBVTQYAOSV-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 2
- 229940043276 diisopropanolamine Drugs 0.000 claims description 2
- 235000019277 ethyl gallate Nutrition 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 2
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- TXGSOSAONMOPDL-UHFFFAOYSA-N propan-2-yl 3,4,5-trihydroxybenzoate Chemical compound CC(C)OC(=O)C1=CC(O)=C(O)C(O)=C1 TXGSOSAONMOPDL-UHFFFAOYSA-N 0.000 claims description 2
- 235000010388 propyl gallate Nutrition 0.000 claims description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- MWRVRCAFWBBXTL-UHFFFAOYSA-N 4-hydroxyphthalic acid Chemical compound OC(=O)C1=CC=C(O)C=C1C(O)=O MWRVRCAFWBBXTL-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012263 liquid product Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000014593 oils and fats Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a semi-water-based wafer substrate cleaning solution composition, which comprises the following components: the organic alcohol amine, the polar organic solvent, the gamma-butyrolactone, the corrosion inhibitor and the water, wherein the weight ratio of the organic alcohol amine to the gamma-butyrolactone to the water is 1-80:30-2:40-1. The invention also provides a use method of the semi-water-based wafer substrate cleaning solution composition, which comprises the following steps: a patterned wafer after photoresist etch removal is provided having polymer impurities. Soaking or spraying the patterned wafer by using the semi-water-based wafer substrate cleaning solution composition to remove polymer impurities; and cleaning the patterned wafer with deionized water to remove polymer impurities.
Description
Technical Field
The invention relates to the technical field of semiconductor wafer processing wet electronic chemicals, in particular to a semi-water-based wafer substrate cleaning solution composition suitable for stripping and removing photoresist, photoresist residues and etching residues on a wafer and a using method thereof.
Background
In the back-end of line (back-end of line) fabrication of microelectronic devices with aluminum (Al) or aluminum/copper (Cu) metallized substrates, an essential step is to deposit a photoresist film on a chip substrate, then form a circuit pattern with the photoresist as a Mask, bake, develop, and then transfer the resulting pattern to the underlying substrate material (electrolyte or metal layer) via reactive plasma etching gas. During plasma etching, due to the interaction of the plasma gas, the etching substrate material and the photoresist, etching residues are formed on the sidewall or the periphery of the etching substrate, and the photoresist mask material is crosslinked, so that the photoresist mask material is more difficult to remove.
After the etching is completed, the photoresist mask and the etching residues must be removed from the patterned wafer (pattern wafer) for further processing. Currently, the cleaning step of the Al or Al (Cu) metalized substrate after etching and removing the photoresist mask (ashing) is to use a hydroxylamine cleaning solution, which has the advantage of being able to very effectively remove various insoluble inorganic residues and organic residues. However, the operating temperature of hydroxylamine based cleaning agents is usually above 65 ℃, and hydroxylamine is very unstable and poses the risk of explosion at higher operating temperatures. Meanwhile, the higher operation temperature causes the rapid decomposition of the system composition and the volatilization of moisture, so that the service life (life time) of the hydroxylamine cleaning solution is only about 1000 minutes generally, and the service life of the bath solution needs to be maintained by continuous solution supplement.
In addition, after the pattern wafer after etching and ashing is processed by the hydroxylamine cleaning solution, the pattern wafer needs to be rinsed by deionized water after being rinsed by using organic solvents such as isopropyl alcohol (IPA) or N-Methyl pyrrolidone (NMP), so as to avoid corrosion to the metal substrate on the surface of the pattern wafer, thereby increasing the wafer manufacturing cost. In addition, the manufacturing and purification process of hydroxylamine has high risk, resulting in a single source of hydroxylamine, and the current electronic grade hydroxylamine is supplied by BASF alone, which is very expensive.
Based on the problems of the prior hydroxylamine cleaning liquid products, the development of a non-hydroxylamine cleaning liquid with excellent cleaning performance, stability and a larger operation window is urgently needed.
Disclosure of Invention
In order to solve the above problems of the prior art, the present invention provides a cleaning solution composition of semi-aqueous wafer substrate, which is suitable for the field of semiconductor manufacturing process, and has good stability, excellent performance of removing sidewall polymer impurities and residual photoresist on the patterned wafer after etching and ashing, and can not corrode the substrate materials of aluminum, aluminum/copper, aluminum/silicon/copper, titanium nitride, titanium/tungsten, silicon oxide, polysilicon, etc. in the manufacturing process.
The semi-water-based wafer substrate cleaning solution composition comprises the following components: the organic alcohol amine, the polar organic solvent, the gamma-butyrolactone, the corrosion inhibitor and the water, wherein the weight ratio of the organic alcohol amine to the gamma-butyrolactone to the water is 1-80:30-2:40-1.
The application method of the semi-water-based wafer substrate cleaning solution composition comprises the following steps: providing a patterned wafer with polymer impurities after the photoresist is etched and removed; soaking or spraying the patterned wafer by using the semi-water-based wafer substrate cleaning solution composition to remove polymer impurities; and cleaning the patterned wafer with deionized water to remove polymer impurities.
The semi-aqueous wafer substrate cleaning solution composition does not contain hydroxylamine, has good stability, has excellent performance of removing the residual side wall polymer impurities on the etched and ashed patterned wafer, does not corrode a substrate material, and has the substantial characteristics of large implementation range, large operation window and the like.
The present invention is described in detail below with reference to the following embodiments in order to make the objects, features and effects of the present invention apparent to those skilled in the art.
Detailed Description
The following embodiments of the present invention are described in more detail so that those skilled in the art can understand the technical features and technical effects of the present invention after reading the present specification.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. As used herein, "ashing" refers to the step of removing the photoresist mask during the photolithography process of the semiconductor.
The semi-aqueous wafer substrate cleaning solution composition comprises organic alcohol amine, a polar organic solvent, gamma-butyrolactone, a corrosion inhibitor and water, wherein the weight ratio of the organic alcohol amine to the gamma-butyrolactone to the water is (1-80): 30-2:40-1. The weight ratio of the organic alcohol amine, based on the total weight percent of the semi-aqueous wafer substrate cleaning solution composition, may be in the range of 1-80%, such as 2-50%; the weight proportion of polar organic solvent may be between 10 and 75%, for example between 30 and 50%; the weight ratio of gamma-butane is between 2 and 30%, for example between 5 and 20%; the weight proportion of corrosion inhibitor is between 1 and 20 percent, such as between 2 and 10 percent; the weight ratio of water is between 1 and 40%, for example between 10 and 30%.
Specifically, the organic alcohol amine may be selected from at least one of monoethanolamine, N-dimethylethanolamine, N-diethylethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, diethanolamine, triethanolamine, 3-propanolamine, 2-aminoethanolamine, ethyldiethanolamine, N- (2-aminoethyl) ethanolamine, and diglycolamine. Preferred organic alcohol amines are, for example: monoethanolamine, diglycolamine, N-methylethanolamine, and N' N-dimethylethanolamine.
Specifically, the polar organic solvent is selected from at least one of formamide, N-methylformamide, N-methylacetamide, N-dimethylformamide, N-dimethylacetamide, dimethyl sulfoxide, tetramethylene sulfone (sulfolane), acetonitrile, benzonitrile, N-methyl-pyrrolidone, N-ethyl-pyrrolidone, 1-cyclohexyl-2-pyrrolidone, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, hexamethylenetetramine, and propylene carbonate.
The gamma-butyrolactone in the semi-aqueous wafer substrate cleaning solution composition can be slowly hydrolyzed under a strong alkaline condition, the hydrolysis of the gamma-butyrolactone is reversible, and lactone is generated under a neutral condition, so that the semi-aqueous wafer substrate cleaning solution composition has a certain weak acidity and has the effect of a corrosion inhibitor. In addition, the solvent has good solubility for various oils and fats in terms of solubility performance, and is also an excellent solvent.
Specifically, the corrosion inhibitor may be at least one selected from phenol and derivatives thereof. Preferred phenol and its derivatives are, for example, phenol, 4-methylphenol, 3,4-dicarboxyphenol, catechol, resorcinol, hydroquinone, 3-methylcatechol, 4-methylcatechol, 3-carboxycatechol, 4-carboxycatechol, dimethylcatechol, 3-t-butylcatechol, 4-t-butylcatechol, catechol acetate, trihydroxybenzene, gallic acid, methyl gallate, ethyl gallate, n-propyl gallate, isopropyl gallate, and n-butyl gallate.
The semi-water-based wafer substrate cleaning solution composition can be prepared by sequentially adding pure water into the components, stirring and dissolving, wherein the heat release phenomenon of organic alkali needs to be controlled in the dissolving process, the temperature in the whole dissolving process is controlled below 50 ℃, and the semi-water-based wafer substrate cleaning solution composition is filtered by a filter element with the diameter of below 0.1 mu m after complete dissolution.
Specifically, the patterned wafer is formed with at least one of metal pads, metal lines, and vias.
Specifically, the temperature for removing polymer impurities by the semi-water-based wafer substrate cleaning solution composition is between 40 and 75 ℃.
Specifically, the time for removing polymer impurities by using the semi-water-based wafer substrate cleaning solution composition is between 10 and 120 minutes.
The semi-water-based wafer substrate cleaning solution composition is not particularly limited in the using process, and can adopt a soaking type or a spraying type.
In order that those skilled in the art will be able to further understand the invention and to practice it accordingly, the invention will now be described in detail with reference to the following specific embodiments.
The compositions of examples and comparative examples are shown in table 1 below.
TABLE 1
To test the effectiveness of the semi-aqueous wafer substrate cleaning solution composition of the present invention, an 8 inch etched and ashed patterned wafer (pattern wafer) was cut into pieces of 10cm × 10cm, the pattern formed by etching including at least one of a metal pad (pad), a metal line (metal line), and a via (via), and then the samples were cleaned by soaking or spraying the cleaning solutions of the above examples and comparative examples, and the cleaned samples were cleaned with deionized water and blown dry with nitrogen. The cleaning effect and the substrate corrosion were evaluated using a Scanning Electron Microscope (SEM) and a Focused Ion Beam (FIB) microscope, and the evaluation results are shown in tables 2 to 4 below.
Table 2: cleaning effect of metal pad (pad) and corrosion of substrate
Table 3: cleaning effect of Metal wire (Metal line) and substrate corrosion
Table 4: cleaning effect of through-hole (Via) and substrate corrosion
The sidewall polymer impurities are harder to remove than the polymer impurities on the substrate, and if the sidewall polymer impurities can be removed, the impurities on the etched and ashed patterned wafer are completely removed. From the results shown in tables 2 to 4, the semi-aqueous wafer substrate cleaning solution composition of the present invention can effectively remove the polymer impurities on the sidewalls of the metal pads, metal lines and vias of the etched and ashed patterned wafer, and simultaneously, does not corrode the substrate material, and has the substantial characteristics of large implementation range, large operation window, etc.
It is worth noting that comparative example 1, compared to example 10, in which no γ -butyrolactone was added, although the sidewall polymer impurities could be removed, was severely corroded to the substrate material; comparative example 2 does not contain organic alcohol amine and does not effectively remove sidewall polymer impurities; comparative example 3 contains no water and is not effective in removing substrate polymer impurities.
In summary, the semi-aqueous wafer substrate cleaning solution composition of the present invention does not contain non-hydroxylamine, has good stability, has excellent cleaning effect on sidewall polymer impurities, does not corrode the substrate, and has substantial characteristics of large implementation range, large operation window, etc.
The foregoing describes embodiments of the present invention with reference to specific embodiments, and those skilled in the art will readily appreciate other advantages and capabilities from the present disclosure. The preferred embodiments of the present invention are not intended to limit the scope of the present invention; all such modifications and variations are intended to be included herein within the scope of this disclosure and the present invention.
Claims (10)
1. A semi-aqueous wafer substrate cleaning solution composition, comprising: organic alcohol amine, a polar organic solvent, gamma-butyrolactone, a corrosion inhibitor and water, wherein the weight ratio of the organic alcohol amine to the gamma-butyrolactone to the water is 1-80:30-2:40-1.
2. The semi-aqueous wafer substrate cleaning solution composition of claim 1, wherein the weight ratio of the organic alcohol amine, the gamma butyrolactone, and the water is from 2 to 50:20-5:30-5.
3. The semi-aqueous wafer substrate cleaning solution composition according to claim 1, wherein the organic alcohol amine is selected from at least one of monoethanolamine, N-dimethylethanolamine, N-diethylethanolamine, isopropanolamine, diisopropanolamine, triisopropanolamine, diethanolamine, triethanolamine, 3-propanolamine, 2-aminoethanolamine, ethyldiethanolamine, N- (2-aminoethyl) ethanolamine, and diglycolamine.
4. The semi-aqueous wafer substrate cleaning solution composition according to claim 1, wherein the polar organic solvent is selected from at least one of formamide, N-methyl acetamide, N-dimethyl formamide, N-dimethyl acetamide, dimethyl sulfoxide, tetramethylene sulfone (sulfolane), acetonitrile, benzonitrile, N-methyl-pyrrolidone, N-ethyl-pyrrolidone, 1-cyclohexyl-2-pyrrolidone, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monobutyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, hexamethylenetetramine, and propylene carbonate.
5. The semi-aqueous wafer substrate cleaning solution composition of claim 1, wherein the corrosion inhibitor is selected from at least one of phenol and derivatives thereof.
6. The semi-aqueous wafer substrate cleaning solution composition according to claim 1, wherein the corrosion inhibitor is selected from at least one of phenol, 4-methylphenol, 3,4-xylenol diformate, catechol, resorcinol, hydroquinone, 3-methylcatechol, 4-methylcatechol, 3-carboxycatechol, 4-carboxycatechol, dimethylcatechol, 3-tert-butylcatechol, 4-tert-butylcatechol, catechol acetate, trihydroxybenzene, gallic acid, methyl gallate, ethyl gallate, n-propyl gallate, isopropyl gallate, and n-butyl gallate.
7. A method of using a semi-aqueous wafer substrate cleaning solution composition, comprising:
providing a patterned wafer after etching and removing the photoresist, wherein the patterned wafer has polymer impurities;
soaking or spraying the patterned wafer with the semi-aqueous wafer-based substrate cleaning solution composition of any one of claims 1 to 6 to remove the polymer impurities; and
and cleaning the patterned wafer with deionized water after the polymer impurities are removed.
8. The method of using a semi-aqueous wafer substrate cleaning solution composition as claimed in claim 7, wherein the patterned wafer is formed with at least one of metal pads, metal lines and vias.
9. The method of claim 7 wherein the semi-aqueous wafer substrate cleaning solution composition removes the polymeric impurities at a temperature of from about 40 ℃ to about 75 ℃.
10. The method as claimed in claim 7, wherein the time for removing the polymer impurities with the semi-aqueous wafer substrate cleaning solution composition is between 10 minutes and 120 minutes.
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