CN115895648B - Eu is adopted 3+ Doped CsCl nanocrystalline modified perovskite solar cell - Google Patents
Eu is adopted 3+ Doped CsCl nanocrystalline modified perovskite solar cell Download PDFInfo
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- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 title claims abstract description 180
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- 239000002243 precursor Substances 0.000 claims abstract description 13
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
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- QAIHWMZHLIBAFX-QZOPMXJLSA-N (z)-octadec-9-en-1-amine;(z)-octadec-9-enoic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCN.CCCCCCCC\C=C/CCCCCCCC(O)=O QAIHWMZHLIBAFX-QZOPMXJLSA-N 0.000 description 1
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a method for preparing Eu 3+ A perovskite solar cell modified by doped CsCl nanocrystalline belongs to the technical field of perovskite solar cells. The Eu 3+ The preparation method of the doped CsCl nanocrystalline comprises the following steps: firstly preparing Cs oleate precursor, and then introducing Eu while preparing nanocrystalline by using the Cs oleate precursor, octadecene, oleic acid and oleylamine 3+ Eu is prepared 3+ Doped CsCl nanocrystals. Further, the Eu produced is 3+ Doped CsCl nanocrystals for modification of FAPbI 3 And (3) preparing the perovskite thin film, and further preparing the perovskite solar cell. CsCl: eu prepared by the invention 3+ Nanocrystalline solves the problem that traditional CsCl nanocrystalline modifies FAPbI 3 The band gap of the film is increased, the crystallinity of the film is poor, the efficiency is low and the humidity stability is poor.
Description
Technical Field
The invention relates to the technical field of perovskite solar cells, in particular to a method for preparing Eu 3+ Doped CsCl nanocrystals modified perovskite solar cells.
Background
Organic-inorganic hybrid Perovskite Solar Cells (PSCs) have attracted widespread attention for their superior performance, rapidly developing in a short period of years, and achieving a certified Power Conversion Efficiency (PCE) in 202225.7%. The unique structure of perovskite imparts excellent photovoltaic properties to PSCs: for example, there is a very high light absorptivity in the visible spectrum, a carrier diffusion length in the micrometer scale and a low cost solution preparation mode, and the band gap can be directly adjusted by adjusting the halogen anions. However, its efficiency and stability problems remain two significant issues for PSC commercialization. Light, heat, oxygen, and humidity all have a significant damaging effect on PSC. The highest efficiency of PSCs is currently a positive PSC structure consisting of FTO, electron transport layer, perovskite layer, hole transport layer and metal electrode, the perovskite system being formamidine iodic perovskite (FAPbI 3 ) (PCE > 25%). This is due to FAPbI compared to other lead-based perovskites 3 Perovskite has a longer carrier diffusion length and a narrower optical bandgap. The band gap value of 1.48 and eV is closer to the theoretical optimal band gap value (1.34 and eV), and accordingly, the solar light absorption is wider. In addition, due to FA + The cation has better chemical stability and thermal activation energy, so that FAPbI 3 Can resist thermal decomposition, and has more excellent thermal stability and photostability. Taken together, FAPbI 3 Is a proper perovskite system, and meets the commercial standard of PSCs application. However, pure FAPbI 3 The ideal black alpha phase is easily converted into a non-photoactive wide band gap delta phase at room temperature, thus FAPbI 3 Phase stabilizers are added during the preparation process to prepare high-efficiency perovskite solar cell devices. To solve the problem of phase inversion, many "stabilizers" have been explored, such as by using specific FA + Cations of smaller radius such as Cs + (167 pm) and MA + (217 pm) partial substitution of FA + Or with smaller anions, e.g. Cl - Partial substitution of I - To reduce tolerance factor inhibition FAPbI 3 Is a phase transition of (c). Commonly used stabilizers are CsCl and methylamine hydrochloride (MACl). However, the introduction of these ions results in FAPbI 3 Lattice contraction, resulting in a bandgap of the perovskite that deviates from the optimal bandgap value of 1.48 eV, resulting in reduced photon absorption in the near infrared region of the device and short circuit current density (J sc ) Is deviated from the adoption of FAPbI 3 Initial stage of the systemAnd lowers the PCE of the device. PCE of MACl-modified devices performed excellently, however, thermal and long-term stability is poor. CsCl PCE is relatively inefficient but has excellent long-term stability and thermal stability. And both modifications have poor humidity stability. Therefore, there is an urgent need to find a suitable stabilizer that does not alter FAPbI 3 The optimal band gap of PSC can also effectively ensure the humidity stability, the heat stability and the long-term stability of PSC.
FAPbI modified in the prior art with MACl as stabilizer 3 The preparation method of the high-efficiency perovskite thin film comprises the following steps:
preparing a perovskite precursor solution: 1.4 mmol-1.8 mmol FAI and PbI 2 The powder (molar ratio 1:1) was mixed in a mixture of DMF and DMSO (volume ratio 4:1) and MACl powder was added in an amount of 0-50 mol%. And pumping a certain amount of filtered perovskite solution by using a pipetting gun, and spreading the perovskite solution on the electron transport layer film. Then, the mixture was spun at 6000 rpm for 60 seconds, and then 1 ml of the anti-solvent diethyl ether was added at 10 seconds, and the anti-solvent was applied dropwise within 1 second. The film was then placed on a hot stand at 150 ℃ for 10 minutes.
The J-V efficiency curve of PSC prepared by this method is shown in FIG. 1, and the stability of MACl-modified PSC is shown in FIG. 2. FAPbI modified with MACl as stabilizer 3 The disadvantage of high efficiency perovskite thin films is that due to organic MA + The volatility of cations, MACl-modified devices, are poorly thermally and long-term stable and are not suitable as a basis for PSC utility. Even under package conditions, the efficiency of the device drops to 53% of the initial value after 700 a h a. Second, MACl-modified FAPbI 3 The device has a low open circuit voltage (maximum only up to 1.10V). And the perovskite band gap increases from an optimal 1.48 eV to 1.53 eV, resulting in reduced photon absorption and J of the device in the near infrared region sc Is reduced.
FAPbI modified in the prior art with CsCl as stabilizer 3 The preparation method of the high-efficiency perovskite thin film comprises the following steps:
1.4-1.8 mmol PbI 2 And FAI powder dissolved in 1 ml of a mixed solution of DMF and DMSO to prepare FAPbI 3 Precursor solution. Adding 0-15% CsCl powder with different molar ratios into the perovskite precursor solution, and putting into a high-temperature rotor for heating and stirring to assist the dissolution of CsCl crystals until the solution is clear and no CsCl powder precipitates. The perovskite solution was then spin coated onto the electron transport layer surface using a pipette gun, spin coated at 1000 rpm for 10s, and spin coated at 4000 rpm for 20 s. 150 μl of anti-solvent chlorobenzene was rapidly and uniformly dropped during spin coating, and then annealed at 150℃for 10 minutes in a heated stage.
FIG. 3 is a 10% CsCl modified FAPbI 3 SEM image of perovskite thin film. FIG. 3 shows that CsCl-modified films have varying grain sizes and are low quality films. CsCl modified FAPbI 3 The disadvantage of (C) is, firstly, that due to Cl - And Cs + Is added so that the band gap of the perovskite deviates from FAPbI 3 Is defined in the specification. Second, csCl modified FAPbI 3 The perovskite thin film is subjected to FA + And Cs + The influence of the mismatch of the ionic radii causes difficulty in forming a thin film of uniform large-sized grains. In addition, due to the strong binding force of ionic crystal properties, the solubility of CsCl in the precursor is relatively low, so that the growth of the crystal is difficult to control in common antisolvent engineering, and the quality of the perovskite film is damaged. Thus, the overall PCE of the device is more than MACl-modified FAPbI 3 The device is poor.
Disclosure of Invention
The present invention aims to provide a method for manufacturing a semiconductor device using Eu 3+ Doped CsCl nanocrystals modified perovskite solar cells. The invention firstly adopts a thermal injection method to synthesize Eu 3+ Doped CsCl nanocrystalline, and Eu is added again 3+ Doped CsCl (CsCl: eu) 3 + ) Nanocrystalline dispersion into chlorobenzene and incorporation into FAPbI by antisolvent 3 Is a perovskite thin film. Eu (Eu) 3+ Is introduced to alleviate FAPbI 3 The problem of lattice expansion is solved, so that the problem that the gaps in the perovskite thin film are deviated from ideal gaps due to the introduction of CsCl; due to Eu 3+ Doped CsCl (CsCl: eu) 3+ ) Is nano crystal, thus can be easily dissolved in chlorobenzene, and solves the problem of poor CsCl solubilityA question; eu (Eu) 3+ Is effective in enhancing CsCl modified FAPbI 3 Film forming property of the film, and a uniform high-quality perovskite film is successfully prepared. At the same time, csCl: eu 3+ The hydrophobic ligand carried by the nanocrystalline can self-assemble on the surface of the perovskite film to greatly improve FAPbI 3 Humidity stability of the device. CsCl: eu 3+ The nano crystal has stable property, the modified device has good thermal stability and long-term stability, and the FAPbI modified by MACl and CsCl is solved 3 Stability problems of PSCs.
In order to achieve the above purpose, the present invention provides the following technical solutions:
one of the technical schemes of the invention is as follows: provides Eu 3+ Preparation method of doped CsCl nanocrystalline comprises the steps of firstly preparing Cs oleate precursor, and then introducing Eu while preparing nanocrystalline by using the Cs oleate precursor, octadecene, oleic acid and oleylamine 3+ Eu is prepared 3+ Doped CsCl nanocrystals.
Preferably, the Eu 3+ Is doped with CsCl and Eu 3+ 0-30% of the total molar amount.
Preferably, the Cs oleate precursor is a preheated solution prior to mixing with octadecene, oleic acid and oleylamine.
Preferably, the temperature of the preheating is 150 ℃.
The second technical scheme of the invention is as follows: provides Eu prepared by the preparation method 3+ Doped CsCl nanocrystals.
The third technical scheme of the invention: providing the Eu 3+ Preparation of doped CsCl nanocrystals 3 Use in perovskite thin films.
Preferably, the Eu 3+ Doped CsCl nanocrystals as FAPbI 3 A stabilizer for perovskite thin films.
The fourth technical scheme of the invention: providing the Eu 3+ Application of doped CsCl nanocrystals in the preparation of perovskite solar cells.
The beneficial technical effects of the invention are as follows:
the invention adopts a hot injection method firstlySynthesis of Eu 3+ Doped CsCl nanocrystalline, and Eu is added again 3+ Doped CsCl (CsCl: eu) 3+ ) Nanocrystalline dispersion into chlorobenzene and incorporation into FAPbI by antisolvent 3 Is a perovskite thin film. Eu (Eu) 3+ Is introduced to alleviate FAPbI 3 The problem of lattice expansion is solved, so that the problem that the gaps in the perovskite thin film are deviated from ideal gaps due to the introduction of CsCl; due to Eu 3+ Doped CsCl (CsCl: eu) 3+ ) Is nano crystal, so that the nano crystal can be easily dissolved in chlorobenzene, and the problem of poor CsCl solubility is solved; eu (Eu) 3+ Is effective in enhancing CsCl modified FAPbI 3 Film forming property of the film, and a uniform high-quality perovskite film is successfully prepared. At the same time, csCl: eu 3+ The hydrophobic ligand carried by the nanocrystalline can self-assemble on the surface of the perovskite film to greatly improve FAPbI 3 Humidity stability of the device. CsCl: eu 3+ The nano crystal has stable property, the modified device has good thermal stability and long-term stability, and the FAPbI modified by MACl and CsCl is solved 3 Stability problems of PSCs.
Drawings
FIG. 1 is a J-V efficiency plot of PSC prepared with MACl as a stabilizer.
FIG. 2 is a graph showing the stability of PSC prepared with MACl as a stabilizer.
FIG. 3 is a 10% CsCl modified FAPbI 3 SEM image of perovskite thin film.
FIG. 4 shows CsCl: eu prepared in example 1 3+ XRD patterns of nanocrystals and CsCl nanocrystals prepared in example 2.
FIG. 5 shows CsCl: eu prepared in example 1 3+ TEM topography of nanocrystals.
FIG. 6 shows the use of CsCl: eu in example 3 3+ Nanocrystalline modified FAPbI 3 Film and example 4 FAPbI modified with CsCl nanocrystals 3 SEM image of film, wherein a is FAPbI modified by CsCl nanocrystalline 3 Film, b is CsCl: eu 3+ Nanocrystalline modified FAPbI 3 A film.
FIG. 7 is FAPbI prepared in example 3, example 4 and control 3 Band gap value of thin film.
Fig. 8 is a J-V plot of perovskite solar cells prepared in example 3, example 4 and control.
Fig. 9 is a graph of the humidity stability of perovskite solar cells prepared in example 3, example 4 and control group.
Detailed Description
Various exemplary embodiments of the invention will now be described in detail, which should not be considered as limiting the invention, but rather as more detailed descriptions of certain aspects, features and embodiments of the invention. It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
In addition, for numerical ranges in this disclosure, it is understood that each intermediate value between the upper and lower limits of the ranges is also specifically disclosed. Every smaller range between any stated value or stated range, and any other stated value or intermediate value within the stated range, is also encompassed within the invention. The upper and lower limits of these smaller ranges may independently be included or excluded in the range.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention.
As used herein, the terms "comprising," "including," "having," "containing," and the like are intended to be inclusive and mean an inclusion, but not limited to.
Example 1
Eu 3+ Preparation of doped CsCl nanocrystals:
(1) Synthesis of Cs oleate precursor:
1.33g CsCO 3 Adding 4mL oleic acid and 10 mL octadecene into 100 mL three-necked bottle, placing on magnetic electric heating sleeve, and introducing N in the whole process 2 Preventing oleic acid oleylamine from oxidizing; the mixed solution was heated to 140 c,stirring for 30min to wait for CsCO 3 Completely dissolving the powder; then, the temperature of the solution was raised to 150 ℃ awaiting heat injection.
(2) Synthesis of CsCl: eu 3+ Nanocrystalline:
0.18g EuCl 3 ·6H 2 O, 10 mL octadecene, 3mL oleic acid and 3mL oleylamine were added to another 100 mL three-necked flask; the left side of the three-necked flask is connected with nitrogen, the middle is inserted into a temperature sensor by a rubber plug, the right side of the three-necked flask is connected with a hose, the hose is inserted into a beaker filled with clean water for detecting the flow of the nitrogen, and then, the nitrogen is filled in N 2 Heating the mixed solution to 140 ℃ under protection, keeping the temperature of 140 ℃ for 1 hour, heating the solution to 220 ℃ after the powder is completely dissolved, and rapidly injecting 1 mL of Cs oleate prepared in the step (1) into the solution after the indication is stable; then, firstly pulling out the hose soaked in water to prevent suck-back, rapidly putting the three-necked bottle into a container with an ice bag to shake, and rapidly cooling the solution through an ice water bath; finally, the obtained CsCl: eu 3+ Putting the nanocrystalline solution into a centrifuge, and centrifuging for 10 minutes under the condition of 5000 revolutions per minute; after centrifugation, the supernatant was discarded, the nanocrystals were redispersed in a centrifuge tube of 5 mL toluene, sonicated in an sonicator for 2 min to uniformity, and then in CsCl: eu 3+ Adding 5 mL ethyl acetate into the nanocrystalline solution, centrifuging for 10 min at 9500 rpm in a centrifuge, and pouring out supernatant after centrifuging to obtain purified CsCl: eu 3+ And (3) nanocrystalline.
Example 2
Preparation of CsCl nanocrystals:
in comparison with example 1, the only difference is that 0.18g of EuCl is to be used in step (2) 3 ·6H 2 O is replaced by 0.0048 g NH 4 Cl, other operations were the same as in example 1.
CsCl: eu prepared in example 1 3+ Characterization of nanocrystals and CsCl nanocrystals prepared in example 2:
CsCl: eu prepared in example 1 3+ The XRD patterns of the nanocrystals and CsCl nanocrystals prepared in example 2 are shown in fig. 4. As can be seen from FIG. 4, csCl: eu 3+ The nanocrystals have the structure Pm-3m (221), which is specific toThe characteristic peaks are located at 21.55, 30.62, 37.77, 43.87, 49.38 and 54.48, respectively, corresponding to the (100), (110), (111), (200), (210) and (211) crystal planes of CsCl lattice, respectively. CsCl: eu compared to CsCl nanocrystals 3+ The (100) diffraction peak of the nanocrystal shifts to a lower 2 theta angle because of Eu 3+ As a result of lattice expansion caused by the introduction of (a).
CsCl: eu prepared in example 1 3+ TEM morphology of the nanocrystals is shown in FIG. 5. As can be seen from fig. 5, the nano-grain size prepared by the thermal injection method is uniformly distributed in a square and round shape, and the average size is 15.3 nm.
Example 3
CsCl:Eu 3+ Preparation of nanocrystalline perovskite solar cell:
(1) Cleaning the FTO substrate: and sequentially ultrasonically cleaning the glass cleaning agent, deionized water, ethanol and acetone in an ultrasonic cleaner for 15 min. And drying with nitrogen, and then placing the dried product in an oven to dry for 30 minutes to obtain the clean FTO substrate.
(2) Preparation of an electron transport layer: the clean FTO substrate is treated with ultraviolet ozone for 30min for standby. SnO is prepared 2 Mixing the colloidal dispersion with purified water 1:1 (v:v) to prepare SnO 2 After the solution was sonicated by 2 h, snO was removed by a pipette 2 The solution was coated on an FTO substrate, spun at 5000 rpm for 30s and then spin coated as a film, annealed at 150℃for 30min on a heated station. And (5) waiting for the substrate to be cooled to room temperature, treating the substrate for 30min by using ultraviolet ozone, and transferring the substrate into a glove box.
(3) 1.4mmol FAI and PbI 2 The powder was dissolved in 1 mL mixed solvent (DMF: dmso=8:1 (v/v)), and after stirring at 40 ℃ for 2 hours, the solution was put into a glove box. CsCl: eu prepared in example 1 3+ The nanocrystals were dissolved in chlorobenzene as anti-solvent for use. Spin-coating at 600 rpm for 6s, then spin-coating at 5000 rpm for 30s, and dropping 200 μLCsCl: eu within 20s 3+(concentration is 0.1 mol/L) nanocrystalline chlorobenzene solution, then put on a heating table at 150 ℃ for annealing 30min.
(4) Hole transport layer preparation: 68 mmol of Spiro-OMeTAD,26 mmol of lithium bistrifluoromethyl-sulfenamide and 55 mmol of 4-tert-butylpyridine were dissolved in 1 mL chlorobenzene and shaken uniformly to obtain Spiro-OMeTAD solution. Spin-coating at 4000 rpm for 30s was used to prepare a Spiro-OMeTAD film.
(5) Electrode preparation: the sample was placed in a vacuum evaporation apparatus and a layer of 100 nm silver electrode was prepared by a thermal evaporation process.
Example 4
Preparation of CsCl nanocrystalline perovskite solar cells:
in comparison with example 3, the only difference is that CsCl: eu in step (3) is 3+ The nanocrystals were replaced with CsCl nanocrystals and the other operations were the same as in example 3.
Example 3 Using CsCl: eu 3+ Nanocrystalline modified FAPbI 3 Film and example 4 FAPbI modified with CsCl nanocrystals 3 SEM of the film is shown in FIG. 6, wherein a is CsCl nanocrystalline modified FAPbI 3 Film, b is CsCl: eu 3+ Nanocrystalline modified FAPbI 3 A film. As can be seen from FIG. 6, eu is found via CsCl 3+ After the nanocrystalline modification, a high-quality perovskite film is obtained, and the film has flat grain size and is uniform; however, csCl nanocrystalline modified perovskite thin films vary in grain size and are rugged, exhibiting low quality thin films.
FAPbI prepared from CsCl 3 Perovskite solar cell was used as Control group (Control) and was prepared in the same manner as in example 3, except that CsCl was used in combination with FAI and PbI 2 Added together in a solvent of DMF and DMSO. The properties of perovskite solar cells prepared in example 3, example 4 and control were determined:
FAPbI prepared in each experimental group 3 The band gap value of the thin film is shown in FIG. 7. As can be seen from FIG. 7, csCl: eu 3+ Nanocrystalline modified FAPbI 3 The film maintains pure FAPbI 3 Band gap value of the film, indicating CsCl: eu 3+ Offset FAPbI caused by CsCl introduction 3 The lattice contracts.
The J-V graph of perovskite solar cells prepared by each experimental group is shown in FIG. 8. As can be seen from the figure, csCl: eu 3+ Nanocrystalline solves CsCl nanocrystalline modifierLow PCE of part and increaseJ sc 。
The graph of the humidity stability of perovskite solar cells prepared by each experimental group is shown in fig. 9. As can be seen from FIG. 9, csCl: eu 3+ The long-term stability of the nanocrystalline modified device is superior to other experimental groups.
Parameters of perovskite solar cells prepared in each experimental group are shown in table 1.
TABLE 1
As can be seen from the data of FIG. 7-FIG. 9 and Table 1, the CsCl: eu prepared by the present invention 3+ Nanocrystalline solves the problem that traditional CsCl nanocrystalline modifies FAPbI 3 The band gap of the film is increased, the crystallinity of the film is poor, the efficiency is low and the humidity stability is poor.
The above embodiments are only illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solutions of the present invention should fall within the protection scope defined by the claims of the present invention without departing from the design spirit of the present invention.
Claims (4)
1. Eu (Eu) 3+ Preparation of doped CsCl nanocrystals 3 Use of a perovskite thin film, characterized in that the Eu is 3 + Doped CsCl nanocrystals as FAPbI 3 A stabilizer for the perovskite thin film;
the Eu 3+ The preparation method of the doped CsCl nanocrystalline comprises the following steps:
firstly preparing Cs oleate precursor, and then introducing Eu while preparing nanocrystalline by using the Cs oleate precursor, octadecene, oleic acid and oleylamine 3+ Eu is prepared 3+ Doped CsCl nanocrystals.
2. The use according to claim 1, wherein the Eu is 3+ Is doped with CsCl and Eu 3+ 0 to 30 percent of the total molar weight.
3. The use of claim 1, wherein the Cs oleate precursor is a preheated solution prior to mixing with octadecene, oleic acid and oleylamine.
4. Use according to claim 3, characterized in that the preheating is at a temperature of 150 ℃.
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| CN108878554A (en) * | 2018-06-26 | 2018-11-23 | 暨南大学 | Based on La rear earth ion doped CsPbBr3Full-inorganic perovskite solar battery and its preparation method and application |
| CN112436091A (en) * | 2020-11-22 | 2021-03-02 | 河北工业大学 | Novel perovskite solar cell doped with rare earth ions |
| CN114369459A (en) * | 2022-01-10 | 2022-04-19 | 吉林大学 | Preparation method of lead-free rare earth perovskite quantum dot, product and application thereof |
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| CN108878554A (en) * | 2018-06-26 | 2018-11-23 | 暨南大学 | Based on La rear earth ion doped CsPbBr3Full-inorganic perovskite solar battery and its preparation method and application |
| CN112436091A (en) * | 2020-11-22 | 2021-03-02 | 河北工业大学 | Novel perovskite solar cell doped with rare earth ions |
| CN114369459A (en) * | 2022-01-10 | 2022-04-19 | 吉林大学 | Preparation method of lead-free rare earth perovskite quantum dot, product and application thereof |
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