CN110993791A - Method for regulating and controlling growth of conductive polymer film crystal - Google Patents
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Abstract
The invention relates to a method for regulating and controlling the crystal growth of a conductive polymer film, which comprises the steps of sequentially putting poly-3 hexyl thiophene films into mixed solvents with different volume ratios for annealing, and then quickly removing the solvents in the films; the mixed solvent is a mixed solvent of chloroform and n-hexane or a mixed solvent of chloroform and cyclohexane. The method for regulating and controlling the growth of the conductive polymer film crystal regulates the controllable growth of the conductive polymer crystal in the film by changing the polarity of the poor solvent, thereby preparing the conductive polymer film with controllable crystallinity and crystal size. The invention utilizes the repulsion of the polar poor solvent and the macromolecule alkyl side chain to induce the tight accumulation of the macromolecule chain and promote the growth of the macromolecule crystal, thereby improving the crystallinity of the conductive macromolecule film.
Description
Technical Field
The invention belongs to the technical field of nano surfaces and preparation thereof, and relates to a method for regulating and controlling the growth of a conductive polymer film crystal.
Background
The conductive polymer has the advantages of low price, light weight, flexibility, solution processing and the like, and is widely applied to the aspects of thin film transistors, luminescent displays, solar cells, sensors and the like. The crystal structure of the conductive polymer film is closely related to the performance of the conductive polymer film. For example, in order to improve mobility, a conductive polymer thin film applied to a transistor needs to have high crystallinity, and it is preferable that long-chain conductive polymers link crystalline regions; in order to improve the luminous efficiency and reduce the non-radiative energy dissipation, the conductive polymer film applied to the light emitting diode should have lower crystallinity and shorter conjugation length; in order to increase the rapid exciton dissociation, the donor and acceptor should have a phase separation size of about 10nm in the conductive polymer thin film of the organic solar cell. Therefore, the crystal structure of the conductive polymer film has important significance for the application of the conductive polymer film. In recent years, thermal annealing treatment and solvent vapor treatment have been widely used as common treatment methods for adjusting the crystal structure of a conductive polymer film in the process of adjusting the crystal structure of the conductive polymer film. However, they still suffer from significant drawbacks. The thermal annealing treatment needs higher temperature, and is easy to cause the degradation and oxidation of the polymer chain with the crystal structure, thereby influencing the physical properties of the polymer film with the crystal structure. The experimental conditions of the solvent vapor annealing treatment are difficult to control, and are not suitable for the treatment of large-scale samples. In order to make up for the deficiencies of thermal annealing and solvent vapor annealing, in recent years, a method of mixed solvent soaking annealing at room temperature has been proposed, which avoids high temperature conditions, is easy to control experimental conditions, and is suitable for processing large-scale samples. Solvent dip annealing has been widely used for conductive polymer thin film crystal structures.
However, the prior art cannot respectively regulate and control the main chain and the branched chain of the conductive polymer of the crystal structure of the conductive polymer film, so that the effective controllable regulation of the number and the size of crystals in the polymer film cannot be realized.
Disclosure of Invention
The invention aims to provide a method for regulating and controlling the crystal growth of a conductive polymer film, and aims to solve the technical problem that the number and the size of crystals in the polymer film cannot be regulated in a controllable manner in the prior art. Compared with the prior art, in the invention, the number and the size of the crystals are controllably adjusted by using the polarity of the non-solvent to regulate the crystal growth process. The amount of crystals is increased by using the nonpolar non-solvent, and the growth of the crystal size is promoted by using the polar non-solvent, so that the controllable adjustment of the amount and the size of the crystals in the polymer film is successfully realized.
The invention utilizes the polarity of the poor solvent in the mixed solvent to regulate and control the growth of the crystal in the conductive polymer film. The development of the method has certain guiding significance on the solvent soaking regulation and control process. Therefore, the method has great application potential in the aspects of regulating and controlling the crystallinity and the crystal size of the crystals in the conductive polymer film.
The method for regulating and controlling the crystal growth of the conductive polymer film comprises the steps of sequentially putting the poly-3 hexyl thiophene film into mixed solvents with different volume ratios for annealing, and then quickly removing the solvents in the film;
the mixed solvent is a mixed solvent of chloroform and n-hexane, a mixed solvent of chloroform and cyclohexane or a mixed solvent of toluene and acetonitrile;
the different volume ratios are that the volume ratio of chloroform to n-hexane, the volume ratio of chloroform to cyclohexane or the volume ratio of toluene to acetonitrile is decreased from 2:1 to 1: 12; the different volume ratios take more than 5 groups of data; typically, a ratio of 5 sets will suffice, and a solvent ratio of 6 or more sets for immersion is also possible.
The annealing refers to soaking in different volume ratios; the immersion solvent can induce the movement of the polymer chains.
As a preferred technical scheme:
the method for regulating and controlling the crystal growth of the conductive polymer film,
according to the method for regulating and controlling the crystal growth of the conductive polymer film, the volume ratio is decreased from 2:1 to 1:12, namely 2:1, 1:2, 1:4 and 1:12 respectively.
According to the method for regulating and controlling the growth of the conductive polymer film crystal, the total annealing time is more than or equal to 500 hours, wherein the time in each proportion of mixed solvent is more than or equal to 100 hours.
In the method for regulating and controlling the crystal growth of the conductive polymer film, the step of quickly removing the solvent in the film is to quickly blow the film by compressed gas; the gas is air, nitrogen or argon; the rapid blow-drying by compressed gas means that the solvent is blown dry by compressed gas within 5 seconds.
The method for regulating and controlling the growth of the conductive polymer film crystal has the film thickness of 30 nm-100 nm.
In the method for controlling the crystal growth of the conductive polymer thin film, the crystallinity is increased along with the decrease of the proportion of the non-solvent in the mixed solvent in which the polymer is not dissolved. The crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
The method for regulating and controlling the crystal growth of the conductive polymer film comprises the following steps:
(1) preparing a conductive polymer solution:
dissolving poly-3 hexyl thiophene (P3HT) in chlorobenzene solution to prepare P3HT chlorobenzene solution;
(2) treatment of the solid substrate sheet:
placing the solid substrate sheet in a container containing concentrated H2SO4Concentrated H2O2Boiling the mixture and deionized water in a cleaning solution prepared according to the volume ratio of 100:35:15 at 120-150 ℃ for 60-80 minutes, then washing the mixture with the deionized water, and blow-drying the mixture;
(3) preparing a film:
placing the solid substrate piece on a table type spin coater, spin-coating at a rotating speed of 2000 r/min-3000 r/min for 30 s-60 s, and spin-coating the prepared P3HT chlorobenzene solution on the solid substrate piece to form a film;
(4) and (3) drying the film:
the resulting film was vacuum dried to remove the residual organic solvent.
According to the method for regulating and controlling the growth of the conductive polymer film crystal, the molecular weight of poly-3 hexyl thiophene (P3HT) is 54-75 kg/mol, and the dispersion degree is less than 2.5; the chlorobenzene solution had a concentration of 15 mg/ml.
In the method for regulating and controlling the growth of the conductive polymer film crystal, the solid substrate pieces are monocrystalline silicon pieces and glass pieces.
In the method for regulating and controlling the crystal growth of the conductive polymer thin film, the solid substrate sheet is cut into a square shape with the size of 1 × 1cm by using a glass cutter.
According to the method for regulating and controlling the growth of the conductive polymer film crystal, high-purity nitrogen gas is used for blow-drying; the vacuum drying is performed under vacuum for 24 hours or more and under a vacuum degree of 200Pa or less.
The invention utilizes the mixed solvent soaking method to induce the controllable growth of the crystal in the conductive polymer film, and adjusts the controllable growth of the conductive polymer crystal in the film by changing the polarity of the poor solvent, thereby preparing the conductive polymer film with controllable crystallinity and crystal size. In the soaking process of the mixed solvent, the good affinity of the nonpolar poor solvent with the substrate and the nonpolar alkyl side chain of the polymer is utilized to induce the generation of new crystal nuclei on the interface of the polymer and the substrate, thereby improving the crystallinity of the conductive polymer film; the repulsion of polar poor solvent and the alkyl side chain of the polymer is utilized to induce the polymer chain to be more tightly stacked and promote the growth of polymer crystal, thereby improving the crystallinity of the conductive polymer film. From the induction mechanism of the method, the method is effective in regulating and controlling the crystallization behavior of the series of conductive polymer films with nonpolar alkyl side chains.
Advantageous effects
(1) The method for regulating the growth of the conductive polymer film crystal adjusts the controllable growth of the conductive polymer crystal in the film by changing the polarity of the poor solvent, thereby preparing the conductive polymer film with controllable crystallinity and crystal size.
(2) The method for regulating and controlling the growth of the conductive polymer film crystal utilizes the repulsion of a polar poor solvent and a polymer alkyl side chain to induce the polymer chain to be more tightly stacked and promote the growth of the polymer crystal, thereby improving the crystallinity of the conductive polymer film.
Drawings
FIG. 1 is a process flow diagram of the present invention;
FIG. 2 is a graph of the crystallinity and the crystal size change rate of a conductive polymer film measured by grazing incidence X-ray diffraction method.
Detailed Description
The invention will be further illustrated with reference to specific embodiments. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
The invention adopts grazing incidence X-ray diffraction method (GIXD) to characterize the crystal structure of the conductive polymer poly-3 hexyl thiophene film, and the test result is shown in figure 2, wherein the change rate of crystallinity and the change rate of crystal size are greatly changed along with different processed mixed solvents.
According to the invention, an ellipsometer is adopted to measure the thickness of the film.
Example 1
Preparing a poly-3 hexyl thiophene film by the following steps:
(1) preparing a conductive polymer solution:
dissolving poly-3 hexyl thiophene (P3HT) (molecular weight is 54kg/mol, dispersity is 2.4) in chlorobenzene solution with concentration of 15mg/ml to prepare P3HT chlorobenzene solution;
(2) processing of the monocrystalline silicon wafer:
cutting the monocrystalline silicon wafer into square with size of 1 × 1cm by using a glass cutter, and placing the cut monocrystalline silicon wafer in a container containing concentrated H2SO4Concentrated H2O2Boiling the mixture and deionized water in a cleaning solution prepared according to the volume ratio of 100:35:15 at 120 ℃ for 60 minutes, then washing the mixture by the deionized water, and drying the mixture by high-purity nitrogen gas;
(3) preparing a film:
and (3) placing the monocrystalline silicon piece on a table type spin coater, spin-coating at the rotating speed of 2000r/min for 60s, and spin-coating the prepared P3HT chlorobenzene solution on the monocrystalline silicon piece to form a film.
(4) And (3) drying the film:
the resulting film was kept in vacuum at 190Pa for 25 hours to remove the residual organic solvent.
The thickness of the prepared poly-3 hexyl thiophene film is 80 nm.
Example 2
Preparing a poly-3 hexyl thiophene film by the following steps:
(1) preparing a conductive polymer solution:
dissolving poly-3 hexyl thiophene (P3HT) (molecular weight is 75kg/mol, dispersity is 2.3) in chlorobenzene solution with concentration of 15mg/ml to prepare P3HT chlorobenzene solution;
(2) processing of the monocrystalline silicon wafer:
cutting the monocrystalline silicon wafer into square with size of 1 × 1cm by using a glass cutter, and placing the cut monocrystalline silicon wafer in a container containing concentrated H2SO4Concentrated H2O2Boiling the mixture and deionized water in a cleaning solution prepared according to the volume ratio of 100:35:15 at 150 ℃ for 80 minutes, then washing the mixture by the deionized water, and drying the mixture by high-purity nitrogen gas;
(3) preparing a film:
and (3) placing the monocrystalline silicon piece on a table type spin coater, spin-coating at the rotating speed of 3000r/min for 30s, and spin-coating the prepared P3HT chlorobenzene solution on the monocrystalline silicon piece to form a film.
(4) And (3) drying the film:
the resulting film was kept in vacuum at a vacuum of 180Pa for 24 hours, and the residual organic solvent was removed.
The thickness of the prepared poly-3 hexyl thiophene film is 30 nm.
Example 3
Preparing a poly-3 hexyl thiophene film by the following steps:
(1) preparing a conductive polymer solution:
dissolving poly-3 hexyl thiophene (P3HT) (molecular weight is 54kg/mol, dispersity is 2.4) in chlorobenzene solution with concentration of 15mg/ml to prepare P3HT chlorobenzene solution;
(2) and (3) treating the glass sheet:
cutting the glass sheet into a square shape of 1 × 1cm by using a glass cutter, and placing the cut glass sheet in a container containing concentrated H2SO4Concentrated H2O2Boiling the mixture and deionized water in a cleaning solution prepared according to the volume ratio of 100:35:15 at 120 ℃ for 60 minutes, then washing the mixture by the deionized water, and drying the mixture by high-purity nitrogen gas;
(3) preparing a film:
and (3) placing the glass sheet on a table type spin coater, carrying out spin coating at the rotating speed of 2000r/min for 60s, and carrying out spin coating on the prepared P3HT chlorobenzene solution on the glass sheet to form a film.
(4) And (3) drying the film:
the resulting film was kept in vacuum at a vacuum of 200Pa for 26 hours, and the residual organic solvent was removed.
The thickness of the prepared poly-3 hexyl thiophene film is 40 nm.
Example 4
Preparing a poly-3 hexyl thiophene film by the following steps:
(1) preparing a conductive polymer solution:
dissolving poly-3 hexyl thiophene (P3HT) (molecular weight is 75kg/mol, dispersity is 2.3) in chlorobenzene solution with concentration of 15mg/ml to prepare P3HT chlorobenzene solution;
(2) and (3) treating the glass sheet:
cutting the glass sheet into a square shape of 1 × 1cm by using a glass cutter, and placing the cut glass sheet in a container containing concentrated H2SO4Concentrated H2O2Boiling the mixture and deionized water in a cleaning solution prepared according to the volume ratio of 100:35:15 at 150 ℃ for 80 minutes, then washing the mixture by the deionized water, and drying the mixture by high-purity nitrogen gas;
(3) preparing a film:
and (3) placing the glass sheet on a table type spin coater, carrying out spin coating at the rotating speed of 3000r/min for 30s, and carrying out spin coating on the prepared P3HT chlorobenzene solution on the glass sheet to form a film.
(4) And (3) drying the film:
the resulting film was kept in vacuum at a vacuum of 180Pa for 27 hours, and the residual organic solvent was removed.
The thickness of the prepared poly-3 hexyl thiophene film is 100 nm.
Example 5
The method for regulating and controlling the growth of the conductive polymer film crystal is shown in a process flow diagram of fig. 1 and specifically comprises the following steps:
(1) the poly-3 hexylthiophene film obtained in example 1 was immersed in mixed solvents of chloroform and n-hexane at volume ratios of 2:1, 1:2, 1:4 and 1:12 in this order, wherein the time in the mixed solvents at each ratio was 100, 100 and 100 in this order.
(2) Then blowing the solvent in the film by using compressed air within 5 seconds;
in the mixed solvent in which the polymer is not dissolved, the crystallinity increases as the proportion of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
Example 6
The process of regulating and controlling the crystal growth of the conductive polymer film is basically the same as that in the embodiment 5, except that in the step (1), the poly-3 hexyl thiophene film prepared in the embodiment 2 is adopted, and the soaking time in each mixed solvent is 100, 120, 110 and 110 in sequence; in step (2), the film was blown dry with compressed nitrogen within 5 seconds.
In the mixed solvent in which the polymer is not dissolved, the crystallinity increases as the proportion of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
Example 7
The process of regulating the crystal growth of the conductive polymer film is basically the same as that in the embodiment 5, except that in the step (1), the poly-3 hexyl thiophene film prepared in the embodiment 3 is adopted, n-hexane is replaced by cyclohexane, and the soaking time in each mixed solvent is 100, 110 and 120 in sequence; in step (2), the film was blown dry with compressed argon for 5 seconds.
In the mixed solvent in which the polymer is not dissolved, the crystallinity increases as the proportion of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
Example 8
The process of regulating the crystal growth of the conductive polymer film is basically the same as that in the embodiment 5, except that in the step (1), the poly-3 hexyl thiophene film prepared in the embodiment 3 is adopted, n-hexane is replaced by cyclohexane, and the soaking time in each mixed solvent is 110, 120, 110 and 120 in sequence; in step (2), the film is dried with compressed air within 5 seconds.
In the mixed solvent in which the polymer is not dissolved, the crystallinity increases as the proportion of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
Example 9
The process of regulating and controlling the crystal growth of the conductive polymer film is basically the same as that of the embodiment 5, except that in the step (1), the poly-3 hexylthiophene film is sequentially put into the mixed solvent of chloroform and n-hexane with the volume ratio of 1:1, 1:2, 1:4, 1:8, 1:10 and 1:12 for soaking, wherein the time in the mixed solvent of each proportion is 100, 110, 120, 110 and 120.
In the mixed solvent in which the polymer is not dissolved, the crystallinity increases as the proportion of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
Example 10
The process of regulating and controlling the crystal growth of the conductive polymer film is basically the same as that of the embodiment 5, except that in the step (1), the poly-3 hexylthiophene film is sequentially put into the mixed solvent of toluene and acetonitrile with the volume ratio of 1:1, 1:2, 1:4, 1:8, 1:10 and 1:12 for soaking, wherein the time in the mixed solvent of each proportion is 100, 110, 120, 110 and 120.
In the mixed solvent in which the polymer is not dissolved, the crystallinity increases as the proportion of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of polar non-solvent decreased from 89 v% to 40 v%.
Claims (10)
1. The method for regulating and controlling the crystal growth of the conductive polymer film is characterized by comprising the following steps: putting the poly-3 hexyl thiophene film into mixed solvents with different volume ratios in sequence for annealing, and then quickly removing the solvents in the film;
the mixed solvent is a mixed solvent of chloroform and n-hexane or a mixed solvent of chloroform and cyclohexane;
the different volume ratios are that the volume ratio of chloroform to n-hexane or the volume ratio of chloroform to cyclohexane is decreased from 3:2 to 1: 8; the different volume ratios take more than 5 groups of data;
the annealing refers to soaking in different volume ratios.
2. The method for regulating and controlling the crystal growth of the conductive polymer thin film according to claim 1, wherein the volume ratio is decreased from 2:1 to 1:12, namely 2:1, 1:2, 1:4 and 1:12 respectively.
3. The method for regulating and controlling the crystal growth of the conductive polymer thin film according to claim 1, wherein the total annealing time is not less than 500 hours, and the time in each proportion of the mixed solvent is not less than 100 hours.
4. The method for regulating and controlling the crystal growth of the conductive polymer film according to claim 1, wherein the rapid removal of the solvent in the film is rapid blow-drying with compressed gas; the gas is air, nitrogen or argon; the rapid blow-drying by using compressed gas means that the solvent is blown dry by using the compressed gas within 5 seconds; the thickness of the film is 30 nm-100 nm.
5. The method for controlling the crystal growth of a thin film of an electrically conductive polymer as claimed in claim 1, wherein the crystallinity of the mixed solvent in which the polymer is not dissolved increases as the ratio of the non-solvent decreases; the crystallinity growth rate increased from 20% to 100% as the amount of non-polar non-solvent decreased from 89 v% to 40 v%.
6. The method for regulating and controlling the crystal growth of the conductive polymer film according to claim 1, wherein the preparation method of the poly-3 hexyl thiophene film is as follows:
(1) preparing a conductive polymer solution:
dissolving poly-3 hexyl thiophene in chlorobenzene solution to prepare poly-3 hexyl thiophene-chlorobenzene solution;
(2) treatment of the solid substrate sheet:
placing the solid substrate sheet in a container containing concentrated H2SO4Concentrated H2O2Boiling the mixture and deionized water in a cleaning solution prepared by the volume ratio of 100:35:15 at 120-150 ℃ for 60-80 minutes,washing with deionized water, and blow-drying;
(3) preparing a film:
placing the solid substrate on a table type spin coater, spin-coating at a rotating speed of 2000 r/min-3000 r/min for 30 s-60 s, and spin-coating the prepared poly-3 hexylthiophene-chlorobenzene solution on the solid substrate to form a film;
(4) and (3) drying the film:
the resulting film was vacuum dried to remove the residual organic solvent.
7. The method for regulating and controlling the crystal growth of the conductive polymer film according to claim 6, wherein the molecular weight of the poly-3-hexylthiophene is 54-75 kg/mol, and the dispersity is less than 2.5; the chlorobenzene solution had a concentration of 15 mg/ml.
8. The method for regulating and controlling the crystal growth of the conductive polymer thin film according to claim 6, wherein the solid substrate pieces are monocrystalline silicon pieces and glass pieces.
9. The method for regulating and controlling the crystal growth of the conductive polymer thin film according to claim 6, wherein the solid substrate sheet is cut into a square shape with a size of 1 x 1cm by a glass cutter.
10. The method for regulating and controlling the crystal growth of the conductive polymer thin film according to claim 6, wherein the blow-drying adopts high-purity nitrogen gas; the vacuum drying is performed under vacuum for 24 hours or more and under a vacuum degree of 200Pa or less.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628091A (en) * | 2020-06-08 | 2020-09-04 | 西北工业大学 | Method for improving quality of perovskite thin film through solvent bath auxiliary heat treatment |
| CN115029784A (en) * | 2022-05-28 | 2022-09-09 | 郑州大学 | Preparation method and application of polythiophene fibrous monocrystal lattice |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114696A (en) * | 2007-08-21 | 2008-01-30 | 中国科学院长春应用化学研究所 | Process for producing polymer solar battery |
| CN102142524A (en) * | 2010-12-17 | 2011-08-03 | 中国科学院长春应用化学研究所 | Method for preparing polymer solar cell |
| CN102623642A (en) * | 2012-03-22 | 2012-08-01 | 中国科学院长春应用化学研究所 | Preparation method of polymer solar cell |
| US8603705B2 (en) * | 2010-03-31 | 2013-12-10 | Georgia Tech Research Corporation | Polymer film-producing methods and devices produced therefrom |
| CN104183703A (en) * | 2013-05-28 | 2014-12-03 | 中国科学院大连化学物理研究所 | Full-polymer solar battery with nanostructure and preparation method thereof |
| US20180033971A1 (en) * | 2016-07-27 | 2018-02-01 | The Regents Of The University Of California | Formation and structure of lyotropic liquid crystalline mesophases in donor-acceptor semiconducting polymers |
-
2019
- 2019-12-09 CN CN201911248041.1A patent/CN110993791A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101114696A (en) * | 2007-08-21 | 2008-01-30 | 中国科学院长春应用化学研究所 | Process for producing polymer solar battery |
| US8603705B2 (en) * | 2010-03-31 | 2013-12-10 | Georgia Tech Research Corporation | Polymer film-producing methods and devices produced therefrom |
| CN102142524A (en) * | 2010-12-17 | 2011-08-03 | 中国科学院长春应用化学研究所 | Method for preparing polymer solar cell |
| CN102623642A (en) * | 2012-03-22 | 2012-08-01 | 中国科学院长春应用化学研究所 | Preparation method of polymer solar cell |
| CN104183703A (en) * | 2013-05-28 | 2014-12-03 | 中国科学院大连化学物理研究所 | Full-polymer solar battery with nanostructure and preparation method thereof |
| US20180033971A1 (en) * | 2016-07-27 | 2018-02-01 | The Regents Of The University Of California | Formation and structure of lyotropic liquid crystalline mesophases in donor-acceptor semiconducting polymers |
Non-Patent Citations (4)
| Title |
|---|
| LI L , LU G , YANG X .: "Improving performance of polymer photovoltaic devices using an annealing-free approach via construction of ordered aggregates in solution", 《JOURNAL OF MATERIALS CHEMISTRY》 * |
| LO, C, T, ET AL.: "Molecular stacking structure and field-effect transistor characteristics of crystalline poly(3-hexylthiophene)-block-syndiotactic polypropylene through solvent selectivity", 《RSC ADVANCES》 * |
| PARK Y D .: "High Molecular Weight Conjugated Polymer Thin Films with Enhanced Molecular Ordering, Obtained via a Dipping Method", 《BULLETIN OF THE KOREAN CHEMICAL SOCIETY》 * |
| ZHU Z , WEI B , WANG J .: "Self-assembly of poly(3-hexylthiophene) nanowire networks by a mixed-solvent approach for organic field-effect transistors", 《PHYSICA STATUS SOLIDI (RRL) – RAPID RESEARCH LETTERS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628091A (en) * | 2020-06-08 | 2020-09-04 | 西北工业大学 | Method for improving quality of perovskite thin film through solvent bath auxiliary heat treatment |
| CN115029784A (en) * | 2022-05-28 | 2022-09-09 | 郑州大学 | Preparation method and application of polythiophene fibrous monocrystal lattice |
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