CN115893698A - Treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by III-V compound semiconductor epitaxial process - Google Patents
Treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by III-V compound semiconductor epitaxial process Download PDFInfo
- Publication number
- CN115893698A CN115893698A CN202111165475.2A CN202111165475A CN115893698A CN 115893698 A CN115893698 A CN 115893698A CN 202111165475 A CN202111165475 A CN 202111165475A CN 115893698 A CN115893698 A CN 115893698A
- Authority
- CN
- China
- Prior art keywords
- arsenic
- phosphorus
- wastewater
- treatment
- ferric trichloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002351 wastewater Substances 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 101
- 238000011282 treatment Methods 0.000 title claims abstract description 74
- 230000008569 process Effects 0.000 title claims abstract description 60
- 150000001875 compounds Chemical class 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 title claims description 10
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 116
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 115
- 239000011574 phosphorus Substances 0.000 claims abstract description 107
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 106
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 105
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims abstract description 35
- 238000003756 stirring Methods 0.000 claims abstract description 26
- 238000007599 discharging Methods 0.000 claims abstract description 25
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 claims abstract description 23
- 239000000920 calcium hydroxide Substances 0.000 claims abstract description 23
- 229910001861 calcium hydroxide Inorganic materials 0.000 claims abstract description 23
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 claims abstract description 22
- 239000006228 supernatant Substances 0.000 claims abstract description 21
- 238000011221 initial treatment Methods 0.000 claims abstract description 19
- 239000002244 precipitate Substances 0.000 claims abstract description 16
- 239000000706 filtrate Substances 0.000 claims abstract description 12
- NQXWGWZJXJUMQB-UHFFFAOYSA-K iron trichloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].Cl[Fe+]Cl NQXWGWZJXJUMQB-UHFFFAOYSA-K 0.000 claims abstract description 12
- 238000003825 pressing Methods 0.000 claims abstract description 11
- 239000008394 flocculating agent Substances 0.000 claims abstract description 9
- 238000012360 testing method Methods 0.000 claims abstract description 9
- 229940044631 ferric chloride hexahydrate Drugs 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 45
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 230000035484 reaction time Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229920002401 polyacrylamide Polymers 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000001914 filtration Methods 0.000 abstract description 5
- 239000010802 sludge Substances 0.000 description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 12
- 238000005086 pumping Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000004062 sedimentation Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000004065 wastewater treatment Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- RMBBSOLAGVEUSI-UHFFFAOYSA-H Calcium arsenate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O RMBBSOLAGVEUSI-UHFFFAOYSA-H 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 229940103357 calcium arsenate Drugs 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010517 secondary reaction Methods 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 238000000975 co-precipitation Methods 0.000 description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- 238000005273 aeration Methods 0.000 description 4
- 229940000489 arsenate Drugs 0.000 description 4
- OWTFKEBRIAXSMO-UHFFFAOYSA-N arsenite(3-) Chemical compound [O-][As]([O-])[O-] OWTFKEBRIAXSMO-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 244000005700 microbiome Species 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000013049 sediment Substances 0.000 description 4
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 229910019142 PO4 Inorganic materials 0.000 description 3
- 239000005708 Sodium hypochlorite Substances 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000002306 biochemical method Methods 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- CADZRPOVAQTAME-UHFFFAOYSA-L calcium;hydroxy phosphate Chemical compound [Ca+2].OOP([O-])([O-])=O CADZRPOVAQTAME-UHFFFAOYSA-L 0.000 description 3
- 238000009388 chemical precipitation Methods 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 150000002505 iron Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 3
- JBJWASZNUJCEKT-UHFFFAOYSA-M sodium;hydroxide;hydrate Chemical compound O.[OH-].[Na+] JBJWASZNUJCEKT-UHFFFAOYSA-M 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 241000195493 Cryptophyta Species 0.000 description 2
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 2
- 239000005955 Ferric phosphate Substances 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- WNQQFQRHFNVNSP-UHFFFAOYSA-N [Ca].[Fe] Chemical compound [Ca].[Fe] WNQQFQRHFNVNSP-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000001506 calcium phosphate Substances 0.000 description 2
- 229910000389 calcium phosphate Inorganic materials 0.000 description 2
- 235000011010 calcium phosphates Nutrition 0.000 description 2
- 238000000909 electrodialysis Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 229940032296 ferric chloride Drugs 0.000 description 2
- 229940032958 ferric phosphate Drugs 0.000 description 2
- 239000011790 ferrous sulphate Substances 0.000 description 2
- 235000003891 ferrous sulphate Nutrition 0.000 description 2
- 238000005189 flocculation Methods 0.000 description 2
- 230000016615 flocculation Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 2
- BMWMWYBEJWFCJI-UHFFFAOYSA-K iron(3+);trioxido(oxo)-$l^{5}-arsane Chemical compound [Fe+3].[O-][As]([O-])([O-])=O BMWMWYBEJWFCJI-UHFFFAOYSA-K 0.000 description 2
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 2
- 229910000399 iron(III) phosphate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- XPDICGYEJXYUDW-UHFFFAOYSA-N tetraarsenic tetrasulfide Chemical compound S1[As]2S[As]3[As]1S[As]2S3 XPDICGYEJXYUDW-UHFFFAOYSA-N 0.000 description 2
- 238000011426 transformation method Methods 0.000 description 2
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 2
- 229910017119 AlPO Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000011941 Tilia x europaea Nutrition 0.000 description 1
- CBIFDJDRCNEMQB-UHFFFAOYSA-N [Al].O[As](O)(O)=O Chemical compound [Al].O[As](O)(O)=O CBIFDJDRCNEMQB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 1
- -1 arsenate ions Chemical class 0.000 description 1
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- 125000000223 arsonoyl group Chemical group [H][As](*)(*)=O 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 159000000007 calcium salts Chemical class 0.000 description 1
- 230000000711 cancerogenic effect Effects 0.000 description 1
- 231100000315 carcinogenic Toxicity 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- QAIDPMSYQQBQTK-UHFFFAOYSA-N diethylgallium Chemical compound CC[Ga]CC QAIDPMSYQQBQTK-UHFFFAOYSA-N 0.000 description 1
- 238000012851 eutrophication Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001447 ferric ion Inorganic materials 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003834 intracellular effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000002085 irritant Substances 0.000 description 1
- 231100000021 irritant Toxicity 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 244000144972 livestock Species 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Landscapes
- Removal Of Specific Substances (AREA)
Abstract
The invention provides a treatment process of high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process, which comprises the following steps: adding calcium hydroxide into the wastewater to perform stirring reaction; then adding ferric trichloride for stirring reaction; after the reaction is finished, performing filter pressing to obtain primary treatment wastewater; adding ferric trichloride into the primary treatment wastewater, adjusting the pH value to 4-7, and carrying out stirring reaction; standing to obtain supernatant and precipitate, press-filtering the precipitate, mixing the obtained filtrate with the supernatant to obtain secondary treatment wastewater; sequentially adding an aluminum sulfate solution, a ferric chloride hexahydrate solution and a flocculating agent into the secondary treatment wastewater, adjusting the pH value to 6-7, and reacting; after the reaction is finished, standing, taking supernate to test the arsenic and phosphorus contents, and discharging if the arsenic and phosphorus contents reach the standard; if the supernatant does not reach the standard, performing circulating treatment until the supernatant reaches the standard and discharging. The process can simultaneously remove arsenic and phosphorus and realize the high-efficiency treatment of arsenic and phosphorus wastewater.
Description
Technical Field
The invention relates to a treatment process of high-concentration arsenic and phosphorus-containing wastewater, in particular to a treatment process of high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process, belonging to the technical field of wastewater treatment.
Background
As-containing and P-containing wastewater is generated in the growth process of epitaxial materials such as Light Emitting Diodes (LEDs) and Laser Diodes (LDs). During the growth of epitaxial material, reaction gas such as arsine and phosphine is fed into the reaction chamber of MOCVD (metal organic compound vapor phase epitaxy) equipment, and the reaction gas reacts with trimethyl gallium and diethyl gallium at 700-900 ℃ to form a gallium arsenide and gallium phosphide single crystal layer on the chip substrate, so as to form the epitaxial layer with the light-emitting function. In the reaction process, the utilization rate of the hydrogen arsenide gas and the hydrogen phosphide gas is 5-20%, the residual gas enters a tail gas treatment device, and is oxidized by strong oxidants such as sodium hypochlorite and the like to form arsenate and phosphate, and further high-concentration wastewater containing arsenic and phosphorus is formed. The wastewater has high arsenic and phosphorus concentration, usually the arsenic content is as high as 1000mg/L, the phosphorus content is 3000mg/L, and the phosphorus content is far more than the national discharge standard of 0.5mg/L and 5mg/L. Arsenic is a first pollutant, arsenic and compounds thereof are carcinogenic substances with high toxicity, so that the arsenic easily pollutes the environment without control, the pollution is difficult to eliminate once formed, particularly, once the arsenic pollutes water and soil, the arsenic can enter human bodies through food chains or ground water and underground water to harm human health, and the poisoning events of people and livestock are caused. Phosphorus is a second type of pollutant, if the phosphorus content in the water body exceeds 20mg/L, water body eutrophication can be caused, algae are propagated in large quantities, the water body can generate musty smell and stink due to decomposition after the algae are dead, the survival of aquatic organisms such as fishes is influenced, and the national discharge standard of the phosphorus is 5mg/L.
At present, the main treatment method for effectively treating the wastewater containing arsenic and phosphorus comprises the following steps: chemical method, physical and chemical method and biochemical method. The chemical method comprises a chemical precipitation method, a flocculation precipitation method and the like; the physical and chemical method comprises the following steps: ion exchange method, membrane method, electrodialysis method, photocatalytic oxidation method, adsorption method, etc.; the biochemical method comprises the following steps: a microorganism extracellular transformation method, a plant absorption method, a microorganism intracellular transformation method, a microorganism dead cell adsorption method and the like. The physical and chemical methods are generally used for removing arsenic and phosphorus in waste liquid by methods such as an ion exchange method, a membrane method, an electrodialysis method, a photocatalytic oxidation method, an adsorption method and the like, are mostly developed in recent years and are not suitable for treating high-concentration arsenic and phosphorus waste water; the biochemical method is mainly used for treating low-concentration arsenic and phosphorus-containing wastewater, and a nutrient source is added for maintaining the life of microorganisms, so that COD (chemical oxygen demand) is always exceeded.
The chemical precipitation method is a commonly used method for removing arsenic and phosphorus in industrial production at present, and the chemical precipitation method is further divided into a calcium hydroxide precipitation method, an iron salt precipitation method, a calcium salt and iron salt coprecipitation method, a sulfide precipitation method and the like. The calcium hydroxide precipitation method is characterized in that calcium hydroxide reacts with arsenate ions and arsenite ions in water to generate calcium arsenate and calcium arsenite precipitates, so that the aim of removing arsenic in water is fulfilled, and calcium phosphate and calcium hydroxy phosphate precipitates are formed with phosphate ions in water to realize removal of phosphorus in water. Because the solubility of calcium arsenate and calcium arsenite, calcium phosphate and calcium hydroxy phosphate in water is higher, the single calcium hydroxide method is difficult to treat the arsenic and the phosphorus in the water to meet the discharge requirement; the sulfide precipitation method is to add sulfide to lead arsenic to generate arsenic sulfide precipitate so as to achieve the aim of removing arsenic in water, the arsenic sulfide precipitation method can achieve the aim of effectively removing arsenic only under an acidic condition and can not simultaneously remove phosphorus in water, and the sulfide precipitation method is easy to generate toxic irritant H in an acidic range 2 S gas, which causes secondary pollution, thus limiting its application in wastewater treatment. The existing iron salt precipitation method and calcium salt iron salt coprecipitation method have low efficiency of removing phosphorus and arsenic at the same time, have poor stability and are difficult to separate and clarify.
Chinese patent document CN110304757A provides a process for treating arsenic-containing wastewater, which adopts a method of 'hydrogen peroxide + ferric salt' to remove arsenic, firstly lime is added into the wastewater to increase the pH value, calcium ions react with arsenic in the wastewater to generate calcium arsenite and calcium arsenate sediments, the arsenic is removed by precipitation and filtration, and then the obtained arsenic is removedAdding ferrous salt and hydrogen peroxide into the filtrate, fully aerating and oxidizing by adopting compressed gas, and removing Fe in the wastewater 2+ Oxidation to Fe 3+ ，As 3+ By oxidation to As 5+ And generating calcium arsenate/iron and calcium arsenate/iron slag precipitates, filtering to remove arsenic, and discharging after reaching the standard. However, the process needs aeration and hydrogen peroxide addition, which can cause reaction gas overflow to form secondary pollution, and the invention does not relate to the treatment of high-concentration phosphorus in the wastewater.
Therefore, it is of great significance to develop a wastewater treatment process with high removal rate, which can simultaneously remove arsenic and phosphorus in wastewater generated by the III-V compound semiconductor epitaxial process. The invention is therefore proposed.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a treatment process of high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process. The treatment process can simultaneously remove arsenic and phosphorus, has high removal rate, can realize high-efficiency treatment of arsenic and phosphorus composite wastewater, and ensures that the indexes of arsenic and phosphorus in effluent reach the national emission standard.
The technical scheme of the invention is as follows:
a treatment process of high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process adopts a wastewater treatment system, and comprises the following steps:
(1) Adding calcium hydroxide into high-concentration arsenic-and-phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process for stirring reaction; then adding ferric trichloride for stirring reaction, wherein the charging equivalent of the calcium hydroxide is higher than that of the ferric trichloride; after the reaction is finished, carrying out filter pressing on the obtained mud-water mixture, wherein the obtained filtrate is the primary treatment wastewater;
(2) Adding ferric trichloride into the primary treatment wastewater, adjusting the pH value to 4-7, and carrying out stirring reaction; after the reaction is finished, standing to obtain supernatant and precipitate, performing filter pressing on the precipitate, and mixing the obtained filtrate with the supernatant to obtain secondary treatment wastewater;
(3) Sequentially adding an aluminum sulfate solution, a ferric chloride hexahydrate solution and a flocculating agent into the secondary treatment wastewater, adjusting the pH value to 6-7, and reacting; after the reaction is finished, standing, taking the supernatant to test the arsenic and phosphorus contents, and discharging if the arsenic and phosphorus contents in the supernatant reach the standard; if the content of arsenic and phosphorus does not reach the standard, continuously adding an aluminum sulfate solution, a ferric trichloride hexahydrate solution and a flocculating agent into the solution according to the measured content of arsenic and phosphorus, adjusting the pH value to 6-7, and performing circular treatment until the supernatant reaches the standard and then discharging the supernatant.
According to the invention, the high-concentration arsenic-phosphorus-containing wastewater generated in the III-V compound semiconductor epitaxial process in the step (1) is tail gas washing wastewater generated in the III-V compound semiconductor epitaxial process, the wastewater is tail gas containing arsine and phosphine in the epitaxial process, and the tail gas washing wastewater is decomposed into arsenate Na by a strong oxidant sodium hypochlorite through a tail gas washing device 2 HAsO 4 And phosphate Na 2 HPO 4 The pH value of the wastewater is 6-7, the arsenic content in the wastewater is 800-1000mg/L, and the phosphorus content in the wastewater is 2500-3000mg/L.
According to the present invention, preferably, the ratio of the number of moles of calcium hydroxide to the total number of moles of arsenic and phosphorus in the wastewater in step (1) is 2 to 5, and more preferably 2 to 3; adding calcium hydroxide, and stirring for 25-30min.
Preferably, in the step (1), the ratio of the mole number of the ferric trichloride to the total mole number of the arsenic and the phosphorus in the wastewater is 1-1.5; adding ferric trichloride, and stirring for reaction for 25-30min.
According to the invention, in the step (1), the charging equivalent of calcium hydroxide is higher than that of ferric trichloride, so that the pH value of the whole reaction process is more than or equal to 10, and the high arsenic and phosphorus removal efficiency is achieved only under the condition that the pH value is more than or equal to 10; and the higher the arsenic and phosphorus removal efficiency as the pH is increased.
According to the invention, the arsenic content in the primary treatment wastewater in the step (1) is 50-90mg/L, and the phosphorus content is 100-200mg/L.
According to the invention, the ratio of the mole number of the ferric trichloride in the step (2) to the total mole number of the arsenic and the phosphorus in the primary treatment wastewater is 2-3.
Preferably, according to the invention, in step (2), sodium hydroxide or hydrochloric acid is used to adjust the pH to 4-7; the stirring reaction time is 25-30min.
Preferably, the standing time in step (2) is 100-120min.
According to the invention, the arsenic content in the secondary treatment wastewater in the step (2) is 3-10mg/L, and the phosphorus content is 10-20mg/L.
Preferably, in step (3), the mass concentration of the aluminum sulfate solution added to the secondary treatment wastewater is 10-20g/L, and the ratio of the mole number of aluminum in the aluminum sulfate solution to the total mole number of arsenic and phosphorus in the secondary treatment wastewater is 2-3; the mass concentration of the ferric trichloride hexahydrate solution added into the secondary treatment wastewater is 10-20g/L, and the ratio of the mole number of ferric trichloride in the ferric trichloride hexahydrate solution to the total mole number of arsenic and phosphorus in the secondary treatment wastewater is 3-5.
According to a preferred embodiment of the present invention, the flocculant in step (3) is Polyacrylamide (PAM); the addition amount of the flocculant is 2-3mg/L.
According to the invention, the pH value is preferably adjusted to 6-7 in step (3) by using 20-40% by mass sodium hydroxide solution; the reaction time is 10-15min.
Preferably, according to the invention, the standing time in step (3) is 50-60min.
According to the invention, the arsenic content in the supernatant in the step (3) is less than or equal to 0.3mg/L, and the phosphorus content is less than or equal to 2mg/L, thus reaching the standard.
Preferably, in step (3), the conditions for the recycling treatment are the same as the conditions for the treatment by adding the aluminum sulfate solution, the ferric chloride hexahydrate solution and the flocculating agent, and adjusting the pH value to 6-7.
According to the invention, the wastewater treatment system for the treatment process of the high-concentration wastewater containing arsenic and phosphorus generated by the III-V compound semiconductor epitaxial process comprises a primary treatment system, a secondary treatment system and a tertiary treatment system;
the primary treatment system comprises a primary reaction tank, and the primary reaction tank is sequentially connected with a sludge pump a, a sludge tank a, a sludge pump b and a filter press a;
the secondary treatment system comprises a secondary reaction tank, and the secondary reaction tank is sequentially connected with a sludge pump c, a sludge tank b, a sludge pump d and a filter press b; the secondary reaction tank is also connected with a water pump a; the secondary reaction tank is also connected with a filter press a in the primary treatment system;
the three-stage treatment system comprises a three-stage reaction tank, wherein one end of the three-stage reaction tank is connected with a ferric trichloride water tank, an aluminum sulfate water tank and a NaOH water tank through a diaphragm pump a, a diaphragm pump b and a diaphragm pump c respectively; the other end of the third-stage reaction tank is sequentially connected with a sedimentation tank, a water pump b, a water collecting tank, a precision filter and a water draining tank; the third-stage reaction tank is also connected with a drainage box; the third-stage reaction tank is also connected with a water pump a and a filter press b in the second-stage treatment system; the sedimentation tank is also sequentially connected with a sludge pump e, a sludge tank c, a sludge pump f and a filter press c; the filter press c is also connected with the third-stage reaction tank.
According to the invention, a preferred embodiment comprises the steps of:
(1) Adding high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process into a first-stage reaction tank, and adding calcium hydroxide into the first-stage reaction tank for stirring reaction; then adding ferric trichloride for stirring reaction; after the reaction is finished, pumping the obtained mud-water mixture into a sludge tank a through a sludge pump a, pumping the mud-water mixture into a filter press a through a sludge pump b, performing filter pressing to obtain primary arsenic-containing wastewater, and discharging the primary arsenic-containing wastewater into a secondary reaction tank;
(2) Adding ferric trichloride into the second-stage reaction tank, adding sodium hydroxide or hydrochloric acid to adjust the pH value to 4-7, and carrying out stirring reaction; after the reaction is finished, standing, and discharging the obtained supernatant into a third-stage reaction tank through a water pump a; pumping the obtained precipitate into a sludge tank b through a sludge pump c, pumping the precipitate into a filter press b through a sludge pump d, discharging filtrate obtained by filter pressing into a third-stage reaction tank, and mixing the filtrate with supernatant to obtain second-stage treated wastewater;
(3) Sequentially adding an aluminum sulfate solution and a ferric chloride hexahydrate solution into the three-stage reaction tank through a diaphragm pump b and a diaphragm pump a respectively, then adding a flocculating agent, adding a sodium hydroxide solution into the three-stage reaction tank through a diaphragm pump c to adjust the pH value to 6-7, and reacting; after the reaction is finished, discharging the obtained mixture into a sedimentation tank for sedimentation, discharging the obtained supernatant into a water collecting tank through a water pump b, then discharging into a precision filter for filtration, then entering a water discharging tank, testing the arsenic and phosphorus contents, discharging if the arsenic and phosphorus contents reach the standard, and discharging into a three-stage reaction tank for circular treatment if the arsenic and phosphorus contents do not reach the standard; and pumping the sediment obtained in the sedimentation tank into a sludge tank c through a sludge pump e, pumping the sediment into a filter press c through a sludge pump f, and discharging the filtrate obtained by filter pressing into a third-stage reaction tank.
According to the invention, the first-stage reaction tank, the second-stage reaction tank and the third-stage reaction tank in the steps (1), (2) and (3) are provided with stirrers at 30-50rpm, and are started during operation.
The principle of the invention is as follows:
firstly, adding a proper amount of calcium hydroxide according to the arsenic content in the wastewater, and reacting arsenic, phosphorus and calcium hydroxide in the wastewater to generate insoluble calcium arsenate and calcium hydroxy phosphate, wherein the reaction formulas are shown as (1) and (2); then ferric trichloride is added for primary treatment and secondary treatment, phosphorus and arsenic in the wastewater react with the ferric trichloride to generate indissolvable ferric phosphate and ferric arsenate, and the reaction formulas are shown as (3), (4) and (5).
3Ca 2+ +2AsO 4 3- ＝Ca 3 (AsO 4 ) 2 ↓ ①
5Ca 2+ +3PO 4 3- +OH - ＝Ca 5 (PO 4 ) 3 OH↓ ②
3Ca(OH) 2 +2 FeCl 3 ＝2 Fe(OH) 3 ↓+3CaCl 2 ③
Fe(OH) 3 +AsO 4 3- ＝FeAsO 4 +3OH - ④
Fe 3+ +PO 4 3- ＝FePO 4 ↓ ⑤
Adding aluminum sulfate, ferric trichloride and a flocculating agent into the secondary treatment wastewater in sequence, adjusting the pH value to 6-7, and reacting phosphorus and arsenic in the wastewater with the aluminum sulfate to generate insoluble aluminum arsenate and aluminum phosphate, wherein the reaction formulas are shown as (6) and (7); then reacts with ferric trichloride to generate indissoluble ferric phosphate and ferric arsenate, and the reaction formulas are shown as (8), (9) and (R).
Al 3+ +AsO 4 3- ＝AlAsO 4 ↓ ⑥
Al 3+ +PO 4 3-- ＝AlPO 4 ↓ ⑦
3NaOH+FeCl 3 ＝Fe(OH) 3 ↓+3NaCl ⑧
Fe(OH) 3 +AsO 4 3- ＝FeAsO 4 +3OH - ⑨
Fe 3+ +PO 4 3- ＝FePO 4 ↓ ⑩
The addition of the aluminum sulfate in the invention ensures that the flocculation precipitation effect is better, the dephosphorization effect is better, and the effluent is clear.
The invention has not been described in detail, but is prior art.
The invention has the following technical characteristics and beneficial effects:
1. the method of the invention is a method for simultaneously removing arsenic and phosphorus from wastewater generated by a III-V group compound semiconductor epitaxial process, and the wastewater generated by the III-V group compound semiconductor epitaxial process is characterized in that: arsenic and phosphorus in the wastewater are treated by strong oxidants such As sodium hypochlorite, and the arsenic and the phosphorus are respectively treated by As +5 、P +5 Arsenate and phosphate are formed in a state, so that the water yield is low, intermittent discharge is realized, and the water quality is basically stable; the wastewater has high content of characteristic pollutants arsenic and phosphorus, usually the content is about 1000mg/L of arsenic and 3000mg/L of phosphorus, and the pH is 6-7. Aiming at the wastewater, the invention adopts calcium-iron salt coprecipitation to treat the semiconductor process wastewater containing the arsenic and phosphorus III-V compounds, the three-stage treatment is carried out, each stage accurately feeds materials according to the amount of the arsenic and the phosphorus, and the invention has the advantages of simple process, high arsenic and phosphorus removal efficiency, stable treatment effect, convenient operation and standard discharge, and is successfully used for production.
2. Aiming at the treatment of the arsenic-phosphorus coexisting composite wastewater, in order to improve the effects of arsenic removal and phosphorus removal, the pH value of the wastewater has great influence on the reaction of arsenic, phosphorus and iron and aluminum and the generation of precipitates; according to the three-stage treatment method, firstly, calcium hydroxide and ferric trichloride are used for primary treatment, the charging equivalent of the calcium hydroxide is higher than that of the ferric trichloride, most of arsenic and phosphorus can be removed, and the removal rate is higher than that of the calcium hydroxide or the ferric trichloride; then ferric trichloride is used for secondary treatment, under the condition of specific pH, the higher removal rate of phosphorus is ensured, and the removal rate of arsenic is also higher, wherein the secondary treatment mainly aims at removing phosphorus; and then, aluminum sulfate, ferric chloride and a flocculating agent are adopted for three-stage treatment, and the precipitate generated by the reaction of the aluminum sulfate and arsenic and phosphorus has good stability and is easy to separate and clarify.
3. Compared with the process adopting ferrous sulfate, the process directly uses ferric trichloride for generating ferric ions, does not need aeration oxidation, avoids the escape of reaction gas caused by aeration, improves the treatment stability, shortens the precipitation reaction time and improves the arsenic removal efficiency. The wastewater treatment process has the advantages of simple flow, convenient operation, easy implementation, environmental protection and no secondary pollution. The process has high phosphorus removal efficiency, can realize the high-efficiency treatment of the arsenic and phosphorus composite wastewater, achieves the requirements of national discharge standards after the arsenic and phosphorus wastewater is treated, has the arsenic content of less than 0.3mg/L and the phosphorus content of less than 2mg/L, and has great social, economic and environmental benefits.
Drawings
FIG. 1 is a schematic view showing the structure of a wastewater treatment system for use in the treatment of high-concentration arsenic-and phosphorus-containing wastewater produced by the epitaxial process of a III-V compound semiconductor according to the present invention.
Wherein, 1, a first-stage reaction tank; 2. a sludge pump a; 3. a sludge tank a; 4. a sludge pump b; 5. a, a filter press a; 6. a secondary reaction tank; 7. a sludge pump c; 8. a sludge tank b; 9. a sludge pump d; 10. a filter press b; 11. a water pump a; 12. a third-stage reaction tank; 13. a sedimentation tank; 14. a water pump b; 15. a water collection tank; 16. a precision filter; 17. a drain tank; 18. a sludge pump e; 19. a sludge tank c; 20. a sludge pump f; 21. c, a filter press; 22. a diaphragm pump a; 23. a diaphragm pump b; 24. a diaphragm pump c; 25. a ferric trichloride water tank; 26. an aluminum sulfate water tank; 27. NaOH water tank.
Detailed Description
The present invention will be further described with reference to the following detailed description, but not limited thereto, in conjunction with the accompanying drawings. The invention has not been described in detail, but is prior art in this field.
Meanwhile, the instruments and equipment used in the following examples are all common instruments and equipment in the field and can be obtained commercially if no special description is provided; the raw materials used are, unless otherwise specified, those commonly used in the art, and ordinary commercial products.
The precision filter used in the examples was a Shanghai Large sheet 1 micron filter.
Example 1
A treatment process of high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process utilizes a wastewater treatment system shown in figure 1, and comprises the following steps:
(1) First stage treatment
Firstly, testing the arsenic content and the phosphorus content in high-concentration arsenic-phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process to be 1000mg/L and 2800mg/L respectively; pumping the waste water into a working volume of 2.5m 3 In the first-stage reaction tank 1, the amount of wastewater was 2m 3 (ii) a Adding 38.1kg of calcium hydroxide into the wastewater, stirring and reacting for 30min; then 56kg FeCl was added to the wastewater 3 ·6H 2 O, after adding ferric trichloride, testing the pH value to be 11, and stirring and reacting for 30min under the condition that the stirring rotating speed is 50 rpm; after the reaction is finished, the obtained mud-water mixture is pumped into a sludge tank a 3 through a sludge pump a 2, then is pumped into a filter press a 5 through a sludge pump b 4, first-stage arsenic-containing wastewater is obtained through filter pressing, the first-stage arsenic-containing wastewater is discharged into a second-stage reaction tank 6, and then second-stage treatment is carried out.
After the primary treatment, the arsenic content of the obtained primary treatment wastewater is 86mg/L, the phosphorus content is 150mg/L, and the wastewater amount is 2m 3 。
(2) Secondary treatment
FeCl is charged into the second-stage reaction tank 6 3 ·6H 2 O9.7 kg, stirring and reacting for 30mim after feeding, then using hydrochloric acid with the mass fraction of 37% to adjust the pH value to 4, stirring and reacting for 30min, the stirring speed is 50rpm,the working volume of the second-stage reaction tank is 2.5m 3 (ii) a After the reaction is finished, standing for 120min, discharging the obtained supernatant into a third-stage reaction tank 12 through a water pump a 11, pumping the obtained precipitate into a sludge tank b 8 through a sludge pump c 7, pumping the precipitate into a filter press b 10 through a sludge pump d 9, discharging the filtrate obtained by filter pressing into the third-stage reaction tank 12, mixing the filtrate with the supernatant to obtain second-stage treatment wastewater, and then carrying out third-stage treatment.
After the secondary treatment, the arsenic content of the obtained secondary treatment wastewater is 10mg/L, the phosphorus content is 20mg/L, and the wastewater amount is 2m 3 。
(3) Three stage treatment
Firstly, pumping 40L of aluminum sulfate solution with the mass concentration of 20g/L in an aluminum sulfate water tank 26 into a three-stage reaction tank 12 through a diaphragm pump b 23, then pumping 63L of ferric trichloride hexahydrate solution with the mass concentration of 20g/L in an iron trichloride water tank 25 into the three-stage reaction tank 12 through a diaphragm pump a 22, then adding 4g of flocculant polyacrylamide, pumping 20% of sodium hydroxide solution with the mass concentration of 20% in a NaOH water tank into the three-stage reaction tank 12 through a diaphragm pump c 24, adjusting the pH value to 6, and reacting for 15min under the stirring of the stirring rotation speed of 50 rpm; after the reaction is finished, discharging the obtained mixture into a sedimentation tank 13 for sedimentation, discharging the obtained supernatant into a water collecting tank 15 through a water pump b 14, then discharging into a precision filter 16 for filtration, and then entering a water discharging tank 17, and discharging when the arsenic content and the phosphorus content of water in the water discharging tank 17 are respectively 0.2mg/L and 2mg/L through testing; the sediment obtained in the sedimentation tank is pumped into a sludge tank c 19 through a sludge pump e 18, then is pumped into a filter press c 21 through a sludge pump f 20, and the filtrate obtained by filter pressing is discharged into a third-stage reaction tank 12 for continuous treatment.
Test example 1
A process for treating high-concentration arsenic-and phosphorus-containing wastewater generated in a III-V compound semiconductor epitaxial process is as described in example 1, except that: calcium hydroxide is added in the step (1) to adjust the pH values to 7, 8, 9, 10 and 12 respectively, and the arsenic removal efficiency and the phosphorus removal rate of the primary treatment are shown in Table 1.
TABLE 1 arsenic removal efficiency and phosphorus removal efficiency of primary treatment at different pH' s
As can be seen from Table 1, the pH has a great influence on the arsenic and phosphorus removal efficiency of wastewater in the primary treatment process, and the pH of the whole reaction process is ensured to be more than or equal to 10 in the primary treatment in the step (1) of the invention, so that the arsenic and phosphorus removal efficiency is high; when the pH value is more than or equal to 10, the arsenic and phosphorus removal efficiency is higher along with the increase of the pH value.
Test example 2
A process for treating high-concentration arsenic-and phosphorus-containing wastewater generated in a III-V compound semiconductor epitaxial process is as described in example 1, except that: sodium hydroxide or hydrochloric acid is added in the step (2) to adjust the pH values to 3, 5, 6, 7 and 8 respectively, and the arsenic removal efficiency and the phosphorus removal rate of the secondary treatment are shown in Table 1.
TABLE 2 arsenic removal efficiency and phosphorus removal for two-stage treatment at different pH' s
| |
3 | 4 | 5 | 6 | 7 | 8 |
| Efficiency of arsenic removal | 87.4％ | 88.3％ | 88.7％ | 90.2％ | 90％ | 89.2％ |
| Efficiency of phosphorus removal | 86.1％ | 86.7％ | 86.4％ | 86.2％ | 86％ | 85.9％ |
As can be seen from Table 2, pH has a large influence on the removal efficiency of arsenic and phosphorus from wastewater in the secondary treatment process. When the secondary treatment is carried out, under the condition that the pH value is 4-7, the method has higher arsenic and phosphorus removal efficiency; also, in order to preferentially remove phosphorus in the secondary treatment, a preferred pH is 4.
In addition, experiments prove that when the pH value of the three-stage treatment is 6, the phosphorus removal effect of aluminum sulfate is optimal, and the arsenic removal effect of ferric trichloride is optimal.
Project implementation and effect:
the invention adopts the three-stage coprecipitation treatment of calcium hydroxide, aluminum sulfate and ferric chloride aiming at the wastewater generated by the III-V compound epitaxial process, avoids the oxidation process that ferrous sulfate is commonly used and needs aeration and oxidant is added to oxidize ferrous iron into ferric iron, improves the treatment efficiency, promotes the arsenic and phosphorus removal effect, reduces the treatment steps, ensures that a sewage system runs efficiently and stably for a long time, and reduces the production cost. The three-stage ferro-aluminum coprecipitation treatment method can efficiently treat arsenic-containing and phosphorus-containing composite wastewater generated by a III-V compound semiconductor epitaxial process by strictly controlling the pH value, has higher dearsenization rate and dephosphorization rate, achieves the national discharge standard by ensuring that the concentration of residual arsenic in the treated water is lower than 0.3mg/L and the concentration of phosphorus is lower than 2mg/L, and can realize the complete discharge of the wastewater which does not reach the standard by circularly treating the wastewater which does not reach the standard.
Claims (10)
1. A treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process comprises the following steps:
(1) Adding calcium hydroxide into high-concentration arsenic and phosphorus-containing wastewater generated by a III-V compound semiconductor epitaxial process for stirring reaction; then adding ferric trichloride for stirring reaction, wherein the charging equivalent of the calcium hydroxide is higher than that of the ferric trichloride; after the reaction is finished, carrying out filter pressing on the obtained mud-water mixture, wherein the obtained filtrate is the primary treatment wastewater;
(2) Adding ferric trichloride into the primary treatment wastewater, adjusting the pH value to 4-7, and carrying out stirring reaction; after the reaction is finished, standing to obtain supernatant and precipitate, performing filter pressing on the precipitate, and mixing the obtained filtrate with the supernatant to obtain secondary treatment wastewater;
(3) Sequentially adding an aluminum sulfate solution, a ferric chloride hexahydrate solution and a flocculating agent into the secondary treatment wastewater, adjusting the pH value to 6-7, and reacting; after the reaction is finished, standing, taking supernate to test the arsenic and phosphorus contents, and discharging if the arsenic and phosphorus contents in the supernate reach the standard; if the content of arsenic and phosphorus does not reach the standard, continuously adding an aluminum sulfate solution, a ferric trichloride hexahydrate solution and a flocculating agent into the solution according to the measured content of arsenic and phosphorus, adjusting the pH value to 6-7, and performing circular treatment until the supernatant reaches the standard and then discharging the supernatant.
2. The process for treating high-concentration arsenic-and phosphorus-containing wastewater according to claim 1, wherein the ratio of the number of moles of calcium hydroxide to the total number of moles of arsenic and phosphorus in the wastewater in step (1) is 2 to 5, preferably 2 to 3; adding calcium hydroxide, and stirring for 25-30min.
3. The process according to claim 1, wherein the ratio of the number of moles of the ferric trichloride to the total number of moles of arsenic and phosphorus in the wastewater in the step (1) is 1 to 1.5; adding ferric trichloride, and stirring for reaction for 25-30min.
4. The process according to claim 1, wherein the ratio of the number of moles of the ferric trichloride in the step (2) to the total number of moles of the arsenic and the phosphorus in the first-stage treatment wastewater is 2 to 3.
5. The process for treating high-concentration arsenic-and-phosphorus-containing wastewater as claimed in claim 1, wherein in the step (2), sodium hydroxide or hydrochloric acid is used to adjust the pH to 4-7; the stirring reaction time is 25-30min.
6. The process for treating high-concentration wastewater containing arsenic and phosphorus according to claim 1, wherein the standing time in the step (2) is 100 to 120min.
7. The process according to claim 1, wherein in the step (3), the mass concentration of the aluminum sulfate solution added to the secondary treatment wastewater is 10 to 20g/L, and the ratio of the number of moles of aluminum in the aluminum sulfate solution to the total number of moles of arsenic and phosphorus in the secondary treatment wastewater is 2 to 3; the mass concentration of the ferric trichloride hexahydrate solution added into the secondary treatment wastewater is 10-20g/L, and the ratio of the mole number of ferric trichloride in the ferric trichloride hexahydrate solution to the total mole number of arsenic and phosphorus in the secondary treatment wastewater is 3-5.
8. The process for treating high-concentration wastewater containing arsenic and phosphorus according to claim 1, wherein the flocculant in the step (3) is polyacrylamide; the addition amount of the flocculant is 2-3mg/L.
9. The process for treating high-concentration wastewater containing arsenic and phosphorus according to claim 1, wherein in the step (3), a sodium hydroxide solution with a mass fraction of 20-40% is used for adjusting the pH value to 6-7; the reaction time is 10-15min.
10. The process for treating high-concentration wastewater containing arsenic and phosphorus according to claim 1, wherein the standing time in the step (3) is 50 to 60min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111165475.2A CN115893698A (en) | 2021-09-30 | 2021-09-30 | Treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by III-V compound semiconductor epitaxial process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111165475.2A CN115893698A (en) | 2021-09-30 | 2021-09-30 | Treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by III-V compound semiconductor epitaxial process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115893698A true CN115893698A (en) | 2023-04-04 |
Family
ID=86493833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111165475.2A Pending CN115893698A (en) | 2021-09-30 | 2021-09-30 | Treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by III-V compound semiconductor epitaxial process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115893698A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117772763A (en) * | 2024-02-27 | 2024-03-29 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Method for separating and recovering arsenic, phosphorus and aluminum from vanadium-phosphorus-containing arsenic slag |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004358396A (en) * | 2003-06-05 | 2004-12-24 | Nippon Steel Chem Co Ltd | Treatment material for treating harmful substance in wastewater and its manufacturing method |
| JP2005021723A (en) * | 2003-06-30 | 2005-01-27 | Shin Etsu Handotai Co Ltd | Treatment method for arsenic-containing wastewater and arsenic removing apparatus |
| CN105753218A (en) * | 2016-04-13 | 2016-07-13 | 中国科学院过程工程研究所 | Method for removing trivalent arsenic |
| CN206872560U (en) * | 2017-04-01 | 2018-01-12 | 北京中科康仑环境科技研究院有限公司 | A kind of total system for high concentration arsenic-containing acid waste water |
| CN108346973A (en) * | 2017-01-24 | 2018-07-31 | 山东华光光电子股份有限公司 | A kind of 795nm quantum-well lasers based on AlGaAs/GaInP active areas |
| CN109879477A (en) * | 2019-03-11 | 2019-06-14 | 江苏中电创新环境科技有限公司 | A kind of method for treating arsenic-containing wastewater |
-
2021
- 2021-09-30 CN CN202111165475.2A patent/CN115893698A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004358396A (en) * | 2003-06-05 | 2004-12-24 | Nippon Steel Chem Co Ltd | Treatment material for treating harmful substance in wastewater and its manufacturing method |
| JP2005021723A (en) * | 2003-06-30 | 2005-01-27 | Shin Etsu Handotai Co Ltd | Treatment method for arsenic-containing wastewater and arsenic removing apparatus |
| CN105753218A (en) * | 2016-04-13 | 2016-07-13 | 中国科学院过程工程研究所 | Method for removing trivalent arsenic |
| CN108346973A (en) * | 2017-01-24 | 2018-07-31 | 山东华光光电子股份有限公司 | A kind of 795nm quantum-well lasers based on AlGaAs/GaInP active areas |
| CN206872560U (en) * | 2017-04-01 | 2018-01-12 | 北京中科康仑环境科技研究院有限公司 | A kind of total system for high concentration arsenic-containing acid waste water |
| CN109879477A (en) * | 2019-03-11 | 2019-06-14 | 江苏中电创新环境科技有限公司 | A kind of method for treating arsenic-containing wastewater |
Non-Patent Citations (2)
| Title |
|---|
| 李振瑜;陆晶晶;王国华;刘沫;任忠祥;刘永波;刘宝新;: "磷砷废水处理工程高效运行技术研究", 工业用水与废水, no. 04, 31 August 2012 (2012-08-31), pages 20 - 25 * |
| 袁阳洋: "半导体生产含砷废水处理技术的研究与应用", 首都师范大学, 15 January 2014 (2014-01-15), pages 18 - 20 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117772763A (en) * | 2024-02-27 | 2024-03-29 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Method for separating and recovering arsenic, phosphorus and aluminum from vanadium-phosphorus-containing arsenic slag |
| CN117772763B (en) * | 2024-02-27 | 2024-05-17 | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | Method for separating and recovering arsenic, phosphorus and aluminum from vanadium-phosphorus-containing arsenic slag |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101555077B (en) | Method for treating highly concentrated ammonian wastewater with poor biodegradability by using a multiple-technique combination | |
| CN103991987B (en) | A kind of pretreatment high phosphorus waste water removes technique and the process system thereof of total phosphorus | |
| CN101570368A (en) | Method for processing waste water by fenton oxidation | |
| CN104961304A (en) | High-concentration fluorine chemical wastewater treatment technology | |
| CN102372391B (en) | Method and system for removing phosphorous in high-calcium content sewage through combination of biological method and chemical method | |
| CN107857426A (en) | A kind of phosphorus-containing wastewater integrated conduct method | |
| CN113548774A (en) | Fluorine removal method for fluorine-containing wastewater | |
| CN115893698A (en) | Treatment process of high-concentration arsenic-phosphorus-containing wastewater generated by III-V compound semiconductor epitaxial process | |
| CN105712564A (en) | Equipment for processing waste water through glyphosate production | |
| Mohammed et al. | Phosphorus removal from water and waste water by chemical precipitation using alum and calcium chloride | |
| CN103435217B (en) | Treatment process for sulfuration printing and dyeing wastewater | |
| CN101549921A (en) | Method for treating high-concentration phosphorus-contained wastewater | |
| CN106746179B (en) | A kind of processing method of organic matter and ferrimanganic excessive source water | |
| CN104803511A (en) | High ammonia-nitrogen wastewater treatment device and treatment method | |
| CN111875129A (en) | Combined treatment process for organophosphorus wastewater with high total phosphorus concentration | |
| KR20060100698A (en) | Leachate wastewater treatment system of garbage composting plant | |
| CN112551744A (en) | Method for treating wastewater by utilizing acidic coagulated Fenton oxidation | |
| CN112707379A (en) | Method for treating high ammonia nitrogen wastewater and recovering ammonia and magnesium ammonium phosphate reactor suitable for method | |
| CN108751596B (en) | Treatment method of high-phosphorus high-chroma high-organic matter naphthol production wastewater | |
| CN212375061U (en) | Wastewater phosphorus removal device | |
| CN115594346A (en) | Method for treating debugging wastewater in nuclear power construction phase | |
| KR20010102868A (en) | Nitrogen and phosphorus removal method for advanced treatment of livestock wastewater or manure in liquid corrosion method | |
| CN104743682A (en) | Method for treating organic phosphorus in wastewater | |
| CN108128870B (en) | Method for removing arsenic in drinking water | |
| CN115677072A (en) | Treatment method of epitaxial high-concentration arsenic-containing wastewater |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |