CN115865025B - Manufacturing method and device of semiconductor micro-acoustic device and semiconductor micro-acoustic device - Google Patents
Manufacturing method and device of semiconductor micro-acoustic device and semiconductor micro-acoustic device Download PDFInfo
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Abstract
The application relates to the field of semiconductor devices and provides a semiconductor micro-acoustic device manufacturing method and device and a semiconductor micro-acoustic device, wherein the method comprises the following steps: according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the change of the excitation intensity of the first mode in a first range is triggered, and the first rotation angle of the micro-acoustic substrate is determined; determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is caused in a second range; and determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain the semiconductor micro-acoustic device. The semiconductor micro-acoustic device manufacturing method and device and the semiconductor micro-acoustic device can achieve a good first mode inhibition effect, and improve the low-frequency-band performance of the semiconductor micro-acoustic device, so that the overall performance of the semiconductor micro-acoustic device is further improved.
Description
Technical Field
The application relates to the technical field of semiconductor devices, in particular to a method and a device for manufacturing a semiconductor micro-acoustic device and the semiconductor micro-acoustic device.
Background
The semiconductor micro-acoustic device is manufactured by a semiconductor process, can be used for signal processing, extracts transmitted useful signals, simultaneously suppresses interference signals, removes crosstalk of adjacent signals, and improves the signal-to-noise ratio of the whole machine.
In the first mode, the propagation velocity of the wave is about 2300 m/s to 3900 m/s; in the second mode, the propagation velocity of the wave is about 4100 m/s to 4300 m/s; in the third mode, the wave propagation speed can reach 6100 m/s, the wave propagation speed in the third mode can reach about 1.5 times that in the second mode, and under the same semiconductor process condition, the semiconductor micro-acoustic device with higher frequency can be manufactured; under the same electrical property requirement, the semiconductor micro-acoustic device is manufactured by utilizing the structure corresponding to the third mode, so that the difficulty of a film preparation process and a photoetching process for manufacturing the semiconductor micro-acoustic device can be effectively reduced.
However, the semiconductor micro-acoustic device manufactured by using the corresponding structure in the third mode generally excites the first mode at the low frequency band, and the performance of the semiconductor micro-acoustic device in the low frequency band is degraded due to the existence of the first mode, so that the overall performance of the semiconductor micro-acoustic device is affected.
Disclosure of Invention
The embodiment of the application provides a method and a device for manufacturing a semiconductor micro-acoustic device, and the semiconductor micro-acoustic device, which are used for solving the technical problem that the device manufactured by utilizing a corresponding structure under a third mode can always excite a first mode at a low frequency band, and the performance of the semiconductor micro-acoustic device in the low frequency band can be deteriorated due to the existence of the first mode, so that the overall performance of the semiconductor micro-acoustic device is affected.
In a first aspect, an embodiment of the present application provides a method for manufacturing a semiconductor micro-acoustic device, including:
according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the change of the excitation intensity of the first mode in a first range is triggered, and the first rotation angle of the micro-acoustic substrate is determined; the first self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes a minimum value in the first range;
determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is caused in a second range; the first precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the second range;
determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain a semiconductor micro-acoustic device;
the first mode is a mode in which a wave speed is 2300 m/s to 3900 m/s.
In one embodiment, the determining the first self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle of the euler angle of the micro-acoustic substrate to induce the change of the excitation intensity of the first mode within the first range includes:
maintaining the nutation angle of the euler angle of the micro-acoustic substrate at 0 degrees and the precession angle at 90 degrees, and determining a first self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a first range.
In one embodiment, the determining the first precession angle of the micro-acoustic substrate according to the change in precession angle of the euler angle of the micro-acoustic substrate causing a change in excitation intensity of the first mode within a second range comprises:
maintaining the nutation angle of the Euler angle of the micro-acoustic substrate at 0 degrees and the self-rotation angle at 90 degrees, and determining the first precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a second range.
In one embodiment, said determining an optimal euler angle from said first self-rotation angle and said first precession angle comprises:
when the rotation angle of the Euler angle of the micro-acoustic substrate is the first self-rotation angle, the change of the excitation intensity of the first mode in a third range is triggered according to the change of the precession angle, and a second precession angle of the micro-acoustic substrate is determined; the second precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the third range;
determining a first Euler angle according to the second precession angle and the first rotation angle;
when the precession angle of the Euler angle of the micro-acoustic substrate is the first precession angle, the change of the excitation intensity of the first mode in a fourth range is triggered according to the change of the autorotation angle, and a second self-rotation angle of the micro-acoustic substrate is determined; the second self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes the minimum value in the fourth range;
determining a second euler angle according to the first precession angle and the second rotation angle;
comparing the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the first Euler angle with the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the second Euler angle, and selecting the Euler angle corresponding to the smaller excitation intensity of the first mode as the optimal Euler angle.
In one embodiment, when the rotation angle of the euler angle of the micro-acoustic substrate is the first self-rotation angle, the determining the second precession angle of the micro-acoustic substrate according to the change of the precession angle to induce the change of the excitation intensity of the first mode in the third range includes:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, and determining the second precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a third range.
In one embodiment, when the precession angle of the euler angle of the micro-acoustic substrate is the first precession angle, the determining the second self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle to induce the change of the excitation intensity of the first mode in the fourth range includes:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, wherein the precession angle is the degree of the first precession angle, and determining the second self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a fourth range.
In one embodiment, the manufacturing the micro-acoustic substrate according to the optimal euler angle, manufacturing the metal interdigital electrode by using a semiconductor process, and obtaining the semiconductor micro-acoustic device comprises:
manufacturing a micro-sound substrate according to the optimal Euler angle;
and manufacturing metal interdigital electrodes on the micro-acoustic substrate by adopting a semiconductor process to obtain the semiconductor micro-acoustic device.
In a second aspect, an embodiment of the present application provides a semiconductor micro-acoustic device manufacturing apparatus, including:
the first rotation angle determining module is used for: according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the change of the excitation intensity of the first mode in a first range is triggered, and the first rotation angle of the micro-acoustic substrate is determined; the first self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes a minimum value in the first range;
a first precession angle determination module for: determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is caused in a second range; the first precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the second range;
the device manufacturing module is used for: determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain a semiconductor micro-acoustic device;
the first mode is a mode in which a wave speed is 2300 m/s to 3900 m/s.
In a third aspect, an embodiment of the present application provides a semiconductor micro-acoustic device, which is obtained by using the method for manufacturing a semiconductor micro-acoustic device according to the first aspect, including: a micro-acoustic substrate and a metal interdigital electrode;
the metal interdigital electrode is arranged on the micro-sound substrate;
the material of the micro-sound substrate is lithium niobate.
According to the semiconductor micro-acoustic device manufacturing method, the semiconductor micro-acoustic device manufacturing device and the semiconductor micro-acoustic device, the change of the excitation intensity of the first mode in the first range is triggered according to the rotation angle change of the Euler angle of the micro-acoustic substrate, the first self-rotation angle of the micro-acoustic substrate is determined, the change of the excitation intensity of the first mode in the second range is triggered according to the precession angle change of the Euler angle of the micro-acoustic substrate, the first precession angle of the micro-acoustic substrate is determined, the optimal Euler angle is determined according to the first self-rotation angle and the first precession angle, the micro-acoustic substrate is manufactured according to the optimal Euler angle, and the metal interdigital electrode is manufactured by adopting a semiconductor process, so that the semiconductor micro-acoustic device is obtained. Because the first self-rotation angle is the rotation angle corresponding to the first mode when the excitation intensity of the first mode is at the minimum value in the first range, and the first precession angle is the precession angle corresponding to the first mode when the excitation intensity of the first mode is at the minimum value in the second range, the excitation intensity of the first mode can approach to the minimum according to the first self-rotation angle and the optimal Euler angle determined by the first precession angle, and the optimal Euler angle is utilized to manufacture the micro-acoustic substrate, the obtained semiconductor micro-acoustic device can also achieve better first mode inhibition effect, and the low-frequency band performance of the semiconductor micro-acoustic device is improved, so that the overall performance of the semiconductor micro-acoustic device is further improved.
Drawings
For a clearer description of the present application or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a semiconductor micro-acoustic device according to an embodiment of the present application;
FIG. 2 is a second flow chart of a method for fabricating a semiconductor micro-acoustic device according to an embodiment of the present disclosure;
FIG. 3 is a third flow chart of a method for fabricating a semiconductor micro-acoustic device according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a semiconductor micro-acoustic device manufacturing apparatus according to an embodiment of the present disclosure;
fig. 5 is a schematic structural diagram of a semiconductor micro-acoustic device according to an embodiment of the present application;
FIG. 6 is an admittance diagram of a conventional semiconductor micro-acoustic device;
FIG. 7 is a schematic diagram of simulation results of the forward transmission coefficients of signals corresponding to FIG. 6;
fig. 8 is a schematic diagram of a simulation result of a forward signal transmission coefficient of a semiconductor micro-acoustic device according to an embodiment of the present application.
Reference numerals:
1-a micro-acoustic substrate; 2-metal interdigitated electrodes.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the present application more apparent, the technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some, but not all, embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
Fig. 1 is a schematic flow chart of a method for manufacturing a semiconductor micro-acoustic device according to an embodiment of the present application. Referring to fig. 1, an embodiment of the present application provides a method for manufacturing a semiconductor micro-acoustic device, which may include:
101. according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the excitation intensity of the first mode is triggered to change within a first range, and a first self-rotation angle of the micro-acoustic substrate is determined;
the first self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes a minimum value in a first range;
102. determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is triggered in a second range;
the first precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the second range;
103. and determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain the semiconductor micro-acoustic device.
The first mode is a mode in which the wave speed is 2300 m/s to 3900 m/s.
In step 101, a first admittance curve that changes with the rotation angle can be obtained according to the rotation angle change of the euler angle of the micro-acoustic substrate, and the change condition of the excitation intensity of the first mode is determined according to the first admittance curve, and the rotation angle corresponding to the time when the excitation intensity of the first mode is minimum is determined as the first self-rotation angle.
In step 102, a second admittance curve that varies with the attack angle of the micro-acoustic substrate may be obtained according to the attack angle variation of the micro-acoustic substrate, and the variation of the excitation intensity of the first mode may be determined according to the second admittance curve, and the attack angle corresponding to the minimum excitation intensity of the first mode may be determined as the first attack angle.
In step 103, since the propagation speed of the wave in the third mode is high, it is necessary to obtain the semiconductor micro-acoustic device using the micro-acoustic substrate material supporting the rapid propagation of the wave.
However, the semiconductor micro-acoustic device manufactured by using the corresponding structure in the third mode generally excites the first mode at the low frequency band, and the performance of the semiconductor micro-acoustic device in the low frequency band is degraded due to the existence of the first mode, so that the overall performance of the semiconductor micro-acoustic device is affected.
According to the manufacturing method of the semiconductor micro-acoustic device, the first self-rotation angle of the micro-acoustic substrate is determined according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, which causes the change of the excitation intensity of the first mode in a first range, the first precession angle of the micro-acoustic substrate is determined according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, which causes the change of the excitation intensity of the first mode in a second range, the optimal Euler angle is determined according to the first self-rotation angle and the first precession angle, the micro-acoustic substrate is manufactured according to the optimal Euler angle, and the metal interdigital electrode is manufactured by adopting a semiconductor process, so that the semiconductor micro-acoustic device is obtained. Because the first self-rotation angle is the rotation angle corresponding to the first mode when the excitation intensity of the first mode is at the minimum value in the first range, and the first precession angle is the precession angle corresponding to the first mode when the excitation intensity of the first mode is at the minimum value in the second range, the excitation intensity of the first mode can approach to the minimum according to the first self-rotation angle and the optimal Euler angle determined by the first precession angle, and the optimal Euler angle is utilized to manufacture the micro-acoustic substrate, the obtained semiconductor micro-acoustic device can also achieve better first mode inhibition effect, and the low-frequency band performance of the semiconductor micro-acoustic device is improved, so that the overall performance of the semiconductor micro-acoustic device is further improved.
In one embodiment, determining the first self-rotation angle of the micro-acoustic substrate based on the change in the rotation angle of the euler angle of the micro-acoustic substrate causing a change in the excitation intensity of the first mode within a first range may include:
maintaining the nutation angle of the euler angle of the micro-acoustic substrate at 0 degrees and the precession angle at 90 degrees, and determining a first self-rotation angle of the micro-acoustic substrate based on a change in the excitation intensity of the first mode induced by a change in the self-rotation angle between 0 degrees and 180 degrees within a first range.
According to the embodiment, the nutation angle and the precession angle of the Euler angle of the micro-acoustic substrate are controlled to be fixed degrees, the self-rotation angle is controlled to change between specific degrees, the change of the excitation intensity of the first mode is ensured to be influenced only by the change of the rotation angle number by adopting a control variable mode, so that the association relation between the self-rotation angle and the excitation intensity of the first mode is accurately judged, and the self-rotation angle enabling the excitation intensity of the first mode to be minimum is determined.
In one embodiment, determining the first precession angle of the micro-acoustic substrate based on a change in precession angle of the euler angle of the micro-acoustic substrate to induce a change in excitation intensity of the first mode within the second range may include:
maintaining the nutation angle of the Euler angle of the micro-acoustic substrate at 0 degrees and the self-rotation angle at 90 degrees, and determining the first precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a second range.
According to the embodiment, the nutation angle and the rotation angle of the Euler angle of the micro-acoustic substrate are controlled to be fixed degrees, the precession angle is controlled to be changed between specific degrees, the change of the excitation intensity of the first mode is ensured to be influenced only by the change of the number of the precession angles by adopting a control variable mode, so that the association relation between the precession angle and the excitation intensity of the first mode is accurately judged, and the precession angle which enables the excitation intensity of the first mode to be minimum is determined.
Fig. 2 is a second flow chart of a method for fabricating a semiconductor micro-acoustic device according to an embodiment of the present disclosure. Referring to fig. 2, in one embodiment, determining an optimal euler angle from the first self-rotation angle and the first precession angle may include:
201. when the self-rotation angle of the Euler angle of the micro-acoustic substrate is the first self-rotation angle, the change of the excitation intensity of the first mode in a third range is triggered according to the change of the precession angle, and a second precession angle of the micro-acoustic substrate is determined;
the second precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in a third range;
202. determining a first Euler angle according to the second precession angle and the first rotation angle;
203. when the precession angle of the Euler angle of the micro-acoustic substrate is the first precession angle, the excitation intensity of the first mode is triggered to change within a fourth range according to the change of the autorotation angle, and a second self-rotation angle of the micro-acoustic substrate is determined;
the second self-rotation angle is the corresponding rotation angle when the excitation intensity of the first mode takes the minimum value in the fourth range;
204. determining a second Euler angle according to the first precession angle and the second rotation angle;
205. comparing the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the first Euler angle with the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the second Euler angle, and selecting the Euler angle corresponding to the smaller excitation intensity of the first mode as the optimal Euler angle.
In step 201 and step 203, although the first self-rotation angle and the first precession angle both exist alone, the excitation intensity of the first mode under the respective conditions is minimum, that is, the excitation intensity of the first mode is the minimum value of the euler angle in the range of (0 °,90 °,0 ° -180 °), the euler angle is the minimum value of the euler angle in the range of (0 °,0 ° -180 °,90 °), but when the two are combined to form the euler angle, that is, the euler angle is (0 °, first precession angle, the first self-rotation angle), the euler angle may not be the minimum value of the excitation intensity of the first mode, and therefore, the second precession angle for the first mode is determined to be the minimum value of the euler angle in the case of determining the first self-rotation angle, that is the second precession angle for the first mode is the minimum value of (0 °,0 ° -180 °), and the first self-rotation angle is determined to be the minimum value of the first self-rotation angle in the range of (0 ° ), and the first self-rotation angle is determined to be the minimum value of the first self-rotation angle in the first self-rotation angle.
In step 205, the excitation intensity of the first mode when the euler angle is (0 °, the second precession angle, and the first self-rotation angle) is compared with the excitation intensity of the first mode when the euler angle is (0 °, the first precession angle, and the second self-rotation angle), and the euler angle corresponding to the smaller excitation intensity of the first mode is selected as the optimal euler angle.
According to the embodiment, when the self-rotation angle is determined to be the first self-rotation angle, the second precession angle with the minimum excitation intensity of the first mode is obtained, when the precession angle is determined to be the first precession angle, the second self-rotation angle with the minimum excitation intensity of the first mode is obtained, the excitation intensities of the first mode corresponding to the first Euler angle and the second Euler angle are compared, a smaller value is selected as the optimal Euler angle, the precession angle and the autorotation angle can be combined, and the Euler angle with the minimum excitation intensity of the first mode is obtained.
In one embodiment, when the self-rotation angle of the euler angle of the micro-acoustic substrate is the first self-rotation angle, determining the second precession angle of the micro-acoustic substrate according to the change of the precession angle to induce the change of the excitation intensity of the first mode in the third range may include:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, wherein the self-rotation angle is the degree of the first self-rotation angle, and determining the second precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a third range.
In this embodiment, the nutation angle and the rotation angle of the euler angle of the micro-acoustic substrate are controlled to be fixed degrees, the precession angle is controlled to be changed between specific degrees, the change of the excitation intensity of the first mode is ensured to be influenced only by the change of the number of precession angles by adopting a control variable mode, so that the association relation between the precession angle and the excitation intensity of the first mode is accurately determined, and the precession angle which minimizes the excitation intensity of the first mode is determined.
In one embodiment, when the precession angle of the euler angle of the micro-acoustic substrate is the first precession angle, determining the second self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle to induce the change of the excitation intensity of the first mode within the fourth range may include:
maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, wherein the precession angle is the degree of the first precession angle, and determining the second self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a fourth range.
In this embodiment, the nutation angle and the precession angle of the euler angle of the micro-acoustic substrate are controlled to be fixed degrees, the self-rotation angle is controlled to change between specific degrees, a control variable mode is adopted to ensure that the change of the excitation intensity of the first mode is only influenced by the change of the number of rotation angles, so that the association relation between the self-rotation angle and the excitation intensity of the first mode is accurately determined, the self-rotation angle which minimizes the excitation intensity of the first mode is determined, and meanwhile, the self-rotation angle is determined when the precession angle is determined to be the first precession angle, so that the obtained second self-rotation angle is the self-rotation angle which minimizes the excitation intensity of the first mode when the obtained second self-rotation angle is combined with the first precession angle.
Fig. 3 is a third flow chart of a method for fabricating a semiconductor micro-acoustic device according to an embodiment of the present disclosure. Referring to fig. 3, in one embodiment, fabricating a micro-acoustic substrate according to an optimal euler angle, and fabricating metal interdigital electrodes using a semiconductor process, a semiconductor micro-acoustic device may comprise:
301. manufacturing a micro-sound substrate according to the optimal Euler angle;
302. and manufacturing metal interdigital electrodes on the micro-acoustic substrate by adopting a semiconductor process to obtain the semiconductor micro-acoustic device.
According to the embodiment, the micro-acoustic substrate is manufactured by utilizing the optimal Euler angle, the metal interdigital electrode is manufactured on the micro-acoustic substrate by adopting the semiconductor technology, and the semiconductor micro-acoustic device is finally obtained, so that the semiconductor micro-acoustic device can achieve a better first mode inhibition effect, the low-frequency band performance of the semiconductor micro-acoustic device is improved, and the overall performance of the semiconductor micro-acoustic device is further improved.
The following describes a semiconductor micro-acoustic device manufacturing apparatus provided in an embodiment of the present application, and the semiconductor micro-acoustic device manufacturing apparatus described below and the semiconductor micro-acoustic device manufacturing method described above may be referred to correspondingly.
Fig. 4 is a schematic structural diagram of a semiconductor micro-acoustic device manufacturing apparatus according to an embodiment of the present application. Referring to fig. 4, an embodiment of the present application provides a semiconductor micro-acoustic device manufacturing apparatus, which may include:
the first rotation angle determining module 401 is configured to: according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the change of the excitation intensity of the first mode in a first range is triggered, and the first rotation angle of the micro-acoustic substrate is determined; the first self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes a minimum value in the first range;
a first precession angle determination module 402 configured to: determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is caused in a second range; the first precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the second range;
a device fabrication module 403, configured to: and determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain the semiconductor micro-acoustic device.
The first mode is a mode in which a wave speed is 2300 m/s to 3900 m/s.
According to the semiconductor micro-acoustic device manufacturing device provided by the embodiment, the change of the excitation intensity of the first mode in the first range is triggered according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the first self-rotation angle of the micro-acoustic substrate is determined, the change of the excitation intensity of the first mode in the second range is triggered according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, the first precession angle of the micro-acoustic substrate is determined, the optimal Euler angle is determined according to the first self-rotation angle and the first precession angle, the micro-acoustic substrate is manufactured according to the optimal Euler angle, and the metal interdigital electrode is manufactured by adopting a semiconductor technology, so that the semiconductor micro-acoustic device is obtained. Because the first self-rotation angle is the rotation angle corresponding to the first mode when the excitation intensity of the first mode is at the minimum value in the first range, and the first precession angle is the precession angle corresponding to the first mode when the excitation intensity of the first mode is at the minimum value in the second range, the excitation intensity of the first mode can approach to the minimum according to the first self-rotation angle and the optimal Euler angle determined by the first precession angle, and the optimal Euler angle is utilized to manufacture the micro-acoustic substrate, the obtained semiconductor micro-acoustic device can also achieve better first mode inhibition effect, and the low-frequency band performance of the semiconductor micro-acoustic device is improved, so that the overall performance of the semiconductor micro-acoustic device is further improved.
In one embodiment, the first rotation angle determining module 401 is specifically configured to:
maintaining the nutation angle of the euler angle of the micro-acoustic substrate at 0 degrees and the precession angle at 90 degrees, and determining a first self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a first range.
In one embodiment, the first precession angle determination module 402 is specifically configured to:
maintaining the nutation angle of the Euler angle of the micro-acoustic substrate at 0 degrees and the self-rotation angle at 90 degrees, and determining the first precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a second range.
In one embodiment, the device fabrication module 403 is specifically configured to:
when the rotation angle of the Euler angle of the micro-acoustic substrate is the first self-rotation angle, the change of the excitation intensity of the first mode in a third range is triggered according to the change of the precession angle, and a second precession angle of the micro-acoustic substrate is determined; the second precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the third range;
determining a first Euler angle according to the second precession angle and the first rotation angle;
when the precession angle of the Euler angle of the micro-acoustic substrate is the first precession angle, the change of the excitation intensity of the first mode in a fourth range is triggered according to the change of the autorotation angle, and a second self-rotation angle of the micro-acoustic substrate is determined; the second self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes the minimum value in the fourth range;
determining a second euler angle according to the first precession angle and the second rotation angle;
comparing the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the first Euler angle with the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the second Euler angle, and selecting the Euler angle corresponding to the smaller excitation intensity of the first mode as the optimal Euler angle.
In one embodiment, the device fabrication module 403 is specifically configured to:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, and determining the second precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a third range.
In one embodiment, the device fabrication module 403 is specifically configured to:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, wherein the precession angle is the degree of the first precession angle, and determining the second self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a fourth range.
In one embodiment, the device fabrication module 403 is specifically configured to:
manufacturing a micro-sound substrate according to the optimal Euler angle;
and manufacturing metal interdigital electrodes on the micro-acoustic substrate by adopting a semiconductor process to obtain the semiconductor micro-acoustic device.
Fig. 5 is a schematic structural diagram of a semiconductor micro-acoustic device according to an embodiment of the present application;
FIG. 6 is an admittance diagram of a conventional semiconductor micro-acoustic device;
FIG. 7 is a schematic diagram of simulation results of the forward transmission coefficients of signals corresponding to FIG. 6;
fig. 8 is a schematic diagram of a simulation result of a forward signal transmission coefficient of a semiconductor micro-acoustic device according to an embodiment of the present application.
Referring to fig. 5, an embodiment of the present application provides a semiconductor micro-acoustic device, which is obtained by adopting the method for manufacturing a semiconductor micro-acoustic device, including: a micro-acoustic substrate 1 and metal interdigital electrodes 2;
the metal interdigital electrode 2 is arranged on the micro-sound substrate 1;
the material of the micro-acoustic substrate 1 is lithium niobate.
The optimum euler angle of the micro-acoustic substrate 1 may be (0 °,120 °,90 °), and the metal interdigital electrode 2 may be made of non-heavy metal such as aluminum or beryllium.
Referring to fig. 6, the ordinate in fig. 6 is the admittance of the resonance unit in the conventional semiconductor micro-acoustic device, and the larger the peak value of the admittance is, the larger the signal excitation intensity of the first mode is, that is, the larger the excitation intensity of the first mode is, so that it can be seen that the conventional semiconductor micro-acoustic device excites a third mode and simultaneously excites a distinct first mode in a low frequency band;
referring to fig. 7, the ordinate in fig. 7 is the forward transmission coefficient of the signal on the conventional semiconductor micro-acoustic device, and the larger the peak value of the coefficient is, the larger the excitation intensity of the signal is, so that it can be seen that the signal of the first mode is obvious in the low frequency band of the conventional semiconductor micro-acoustic device;
referring to fig. 8, the ordinate in fig. 8 is the forward transmission coefficient of the signal on the semiconductor micro-acoustic device of the present embodiment, and it can be seen that the peak value of the forward transmission coefficient of the signal is significantly reduced compared with fig. 7, that is, the semiconductor micro-acoustic device of the present embodiment can significantly reduce the excitation intensity of the signal in the first mode, that is, significantly reduce the excitation intensity in the first mode, and significantly suppress the first mode.
According to the embodiment, the semiconductor micro-acoustic device can achieve a better first mode suppression effect through the optimal Euler angle, and the low-frequency band performance of the semiconductor micro-acoustic device is improved, so that the overall performance of the semiconductor micro-acoustic device is further improved.
The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.
Claims (9)
1. A method of fabricating a semiconductor micro-acoustic device, comprising:
according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the change of the excitation intensity of the first mode in a first range is triggered, and the first rotation angle of the micro-acoustic substrate is determined; the first self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes a minimum value in the first range;
determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is caused in a second range; the first precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the second range;
determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain a semiconductor micro-acoustic device;
the first mode is a mode in which a wave speed is 2300 m/s to 3900 m/s.
2. The method of fabricating a semiconductor micro-acoustic device according to claim 1, wherein the determining the first self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle of the euler angle of the micro-acoustic substrate to induce the change of the excitation intensity of the first mode within the first range comprises:
maintaining the nutation angle of the euler angle of the micro-acoustic substrate at 0 degrees and the precession angle at 90 degrees, and determining a first self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a first range.
3. The method of fabricating a semiconductor micro-acoustic device according to claim 1, wherein the determining the first precession angle of the micro-acoustic substrate according to a precession angle change of the euler angle of the micro-acoustic substrate to induce a change in excitation intensity of the first mode within the second range comprises:
maintaining the nutation angle of the Euler angle of the micro-acoustic substrate at 0 degrees and the self-rotation angle at 90 degrees, and determining the first precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a second range.
4. The method of fabricating a semiconductor micro-acoustic device according to claim 1, wherein said determining an optimal euler angle from said first self-rotation angle and said first precession angle comprises:
when the rotation angle of the Euler angle of the micro-acoustic substrate is the first self-rotation angle, the change of the excitation intensity of the first mode in a third range is triggered according to the change of the precession angle, and a second precession angle of the micro-acoustic substrate is determined; the second precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the third range;
determining a first Euler angle according to the second precession angle and the first rotation angle;
when the precession angle of the Euler angle of the micro-acoustic substrate is the first precession angle, the change of the excitation intensity of the first mode in a fourth range is triggered according to the change of the autorotation angle, and a second self-rotation angle of the micro-acoustic substrate is determined; the second self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes the minimum value in the fourth range;
determining a second euler angle according to the first precession angle and the second rotation angle;
comparing the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the first Euler angle with the excitation intensity of the first mode when the Euler angle of the micro-acoustic substrate is the second Euler angle, and selecting the Euler angle corresponding to the smaller excitation intensity of the first mode as the optimal Euler angle.
5. The method for fabricating a semiconductor micro-acoustic device according to claim 4, wherein determining the second precession angle of the micro-acoustic substrate according to a change in precession angle to induce a change in excitation intensity of the first mode within a third range when the rotation angle of the euler angle of the micro-acoustic substrate is the first rotation angle comprises:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, and determining the second precession angle of the micro-acoustic substrate according to the change of the precession angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a third range.
6. The method for fabricating a semiconductor micro-acoustic device according to claim 4, wherein when the precession angle of the euler angle of the micro-acoustic substrate is the first precession angle, determining the second self-rotation angle of the micro-acoustic substrate according to the change of the rotation angle, which causes the change of the excitation intensity of the first mode in the fourth range, comprises:
and maintaining the nutation angle of the Euler angle of the micro-acoustic substrate to be 0 degrees, wherein the precession angle is the degree of the first precession angle, and determining the second self-rotation angle of the micro-acoustic substrate according to the change of the self-rotation angle between 0 degrees and 180 degrees to trigger the change of the excitation intensity of the first mode in a fourth range.
7. The method for manufacturing a semiconductor micro-acoustic device according to claim 1, wherein the manufacturing a micro-acoustic substrate according to the optimal euler angle, manufacturing metal interdigital electrodes by using a semiconductor process, and obtaining the semiconductor micro-acoustic device comprises:
manufacturing a micro-sound substrate according to the optimal Euler angle;
and manufacturing metal interdigital electrodes on the micro-acoustic substrate by adopting a semiconductor process to obtain the semiconductor micro-acoustic device.
8. A semiconductor micro-acoustic device manufacturing apparatus, comprising:
the first rotation angle determining module is used for: according to the change of the rotation angle of the Euler angle of the micro-acoustic substrate, the change of the excitation intensity of the first mode in a first range is triggered, and the first rotation angle of the micro-acoustic substrate is determined; the first self-rotation angle is a corresponding rotation angle when the excitation intensity of the first mode takes a minimum value in the first range;
a first precession angle determination module for: determining a first precession angle of the micro-acoustic substrate according to the change of the precession angle of the Euler angle of the micro-acoustic substrate, wherein the change of the excitation intensity of the first mode is caused in a second range; the first precession angle is a corresponding precession angle when the excitation intensity of the first mode takes a minimum value in the second range;
the device manufacturing module is used for: determining an optimal Euler angle according to the first self-rotation angle and the first precession angle, manufacturing a micro-acoustic substrate according to the optimal Euler angle, and manufacturing a metal interdigital electrode by adopting a semiconductor process to obtain a semiconductor micro-acoustic device;
the first mode is a mode in which a wave speed is 2300 m/s to 3900 m/s.
9. A semiconductor micro-acoustic device obtained by the method of manufacturing a semiconductor micro-acoustic device according to any one of claims 1 to 7, comprising: a micro-acoustic substrate and a metal interdigital electrode;
the metal interdigital electrode is arranged on the micro-sound substrate;
the material of the micro-sound substrate is lithium niobate.
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| CN102403975A (en) * | 2010-09-09 | 2012-04-04 | 精工爱普生株式会社 | Surface acoustic wave device, electronic apparatus, and sensor apparatus |
| CN105716759A (en) * | 2016-02-02 | 2016-06-29 | 上海交通大学 | Rotating shaft torque measuring device based on surface transverse wave |
| CN113676149A (en) * | 2021-08-26 | 2021-11-19 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave device and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102403975A (en) * | 2010-09-09 | 2012-04-04 | 精工爱普生株式会社 | Surface acoustic wave device, electronic apparatus, and sensor apparatus |
| CN105716759A (en) * | 2016-02-02 | 2016-06-29 | 上海交通大学 | Rotating shaft torque measuring device based on surface transverse wave |
| CN113676149A (en) * | 2021-08-26 | 2021-11-19 | 中国科学院上海微系统与信息技术研究所 | Acoustic wave device and preparation method thereof |
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