CN115864793A - Double-push-pull driving circuit based on parallel connection of silicon carbide modules and motor controller - Google Patents
Double-push-pull driving circuit based on parallel connection of silicon carbide modules and motor controller Download PDFInfo
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- CN115864793A CN115864793A CN202211604416.5A CN202211604416A CN115864793A CN 115864793 A CN115864793 A CN 115864793A CN 202211604416 A CN202211604416 A CN 202211604416A CN 115864793 A CN115864793 A CN 115864793A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 165
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 158
- 238000010521 absorption reaction Methods 0.000 claims description 21
- 230000009977 dual effect Effects 0.000 claims description 19
- 239000003990 capacitor Substances 0.000 claims description 18
- 238000004146 energy storage Methods 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- 230000001052 transient effect Effects 0.000 claims description 6
- 230000001629 suppression Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
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Abstract
The invention provides a double push-pull driving circuit based on parallel connection of silicon carbide modules and a motor controller, and relates to the technical field of motor controllers. The double push-pull driving circuit comprises a driving chip, a first push-pull driving circuit, a first silicon carbide module, a second push-pull driving circuit and a second silicon carbide module, wherein the driving chip is connected with the first silicon carbide module through the first push-pull driving circuit and is also connected with the second silicon carbide module through the second push-pull driving circuit; the driving chip is used for controlling the first silicon carbide module and the second silicon carbide module to be synchronously switched on or switched off. The invention can ensure the consistency of the driving PWM signals, avoid the problems of time delay and the like caused by the difference of the driving chips and simultaneously reduce the mutual interference between the first silicon carbide module and the second silicon carbide module; the first silicon carbide module and the second silicon carbide module can be controlled to be synchronously switched on or switched off through the driving chip, and the problem of dynamic non-uniform current caused by switching on or switching off at different time is avoided.
Description
Technical Field
The invention relates to the technical field of motor control, in particular to a double-push-pull driving circuit based on silicon carbide die fast parallel connection and a motor controller.
Background
With the development of new energy electric vehicles, the market demand for high-power and high-performance motor controllers is increasing, which also has a higher requirement for the core device, i.e., the power module, of the motor controller. Compared with the traditional IGBT (insulated gate bipolar transistor) module, the silicon carbide module has the advantages of higher voltage resistance, higher switching speed, smaller loss and the like, so that the application of the silicon carbide module is gradually becoming an industry popular technology.
When the silicon carbide modules are driven in parallel, a mode that each silicon carbide module is provided with an independent driving chip is generally adopted, or a mode that one driving chip drives two silicon carbide modules through one push-pull circuit respectively is adopted. However, the former is likely to cause the delay of PWM (pulse width modulation) waveform and DESAT (DESAT) protection of the driving chip, thereby causing the problem of poor consistency, and the latter is likely to cause the problem of mutual interference between two parallel silicon carbide modules, thereby causing the phenomenon of common emitter circulation, thereby causing the problem of non-uniform current.
Disclosure of Invention
The invention solves the problem of how to improve the problems of poor parallel consistency and non-uniform current of the existing silicon carbide modules.
In order to solve the problems, the invention provides a double push-pull driving circuit based on parallel connection of silicon carbide modules and a motor controller.
In a first aspect, the invention provides a double push-pull driving circuit based on parallel connection of silicon carbide modules, which comprises a driving chip, a first push-pull driving circuit, a first silicon carbide module, a second push-pull driving circuit and a second silicon carbide module, wherein the driving chip is connected with the first silicon carbide module through the first push-pull driving circuit, and is also connected with the second silicon carbide module through the second push-pull driving circuit; the driving chip is used for controlling the first silicon carbide module and the second silicon carbide module to be synchronously switched on or switched off.
Optionally, the double push-pull driving circuit based on the parallel connection of the silicon carbide modules further includes a first RC absorption circuit and a second RC absorption circuit, the first RC absorption circuit is connected to the driving chip and the first push-pull driving circuit, and the second RC absorption circuit is connected to the driving chip and the second push-pull driving circuit.
Optionally, the double push-pull driving circuit based on parallel connection of the silicon carbide modules further includes a first driving resistance circuit and a second driving resistance circuit, the first driving resistance circuit is connected to the first push-pull driving circuit and the first silicon carbide module, the first driving resistance circuit is configured to adjust a charging and discharging current corresponding to the first silicon carbide module, the second driving resistance circuit is connected to the second push-pull driving circuit and the second silicon carbide module, and the second driving resistance circuit is configured to adjust a charging and discharging current corresponding to the second silicon carbide module.
Optionally, the dual push-pull driving circuit based on the parallel connection of the silicon carbide modules further includes a first active clamp circuit and a second active clamp circuit, the first active clamp circuit is connected to the driving chip, the first driving resistor circuit and the first silicon carbide module, respectively, and the second active clamp circuit is connected to the driving chip, the second driving resistor circuit and the second silicon carbide module, respectively.
Optionally, the first active clamp circuit and the second active clamp circuit each comprise a transient voltage suppression diode for turning on when a collector-emitter turn-off voltage spike of the first silicon carbide module or the second silicon carbide module is higher than a set clamp voltage to feed back a collector voltage to an output terminal of the driver chip and a gate terminal of the first silicon carbide module or the second silicon carbide module.
Optionally, when one of the first silicon carbide module and the second silicon carbide module is turned off due to overcurrent, the driving chip is configured to control the other of the first silicon carbide module and the second silicon carbide module to be turned off synchronously according to the fed-back collector voltage.
Optionally, the silicon carbide module parallel-connection-based dual push-pull driving circuit further includes a first gate power supply clamp circuit and a second gate power supply clamp circuit, the first gate power supply clamp circuit is connected to the first silicon carbide module, and the second gate power supply clamp circuit is connected to the second silicon carbide module.
Optionally, the first push-pull driving circuit and the second push-pull driving circuit both include a PNP type triode, an NPN type triode, a filter capacitor, and an energy storage capacitor, a base of the PNP type triode and a base of the NPN type triode are both connected to the driving chip, and the first push-pull driving circuit and the second push-pull driving circuit are configured to take power from and discharge power from the energy storage capacitor.
Optionally, the first silicon carbide module and the second silicon carbide module are used for connecting any one phase upper bridge or lower bridge of a three-phase six-bridge topology of the motor controller in parallel.
In a second aspect, the invention provides a motor controller, which comprises the above-mentioned double push-pull driving circuit based on the parallel connection of silicon carbide modules.
The driving chip is the same, the first silicon carbide module and the second silicon carbide module are driven through double push-pull, the consistency of driving PWM signals can be guaranteed, the problems of time delay and the like caused by the difference of the driving chips are avoided, the problem that the existing silicon carbide modules are poor in consistency can be solved, and meanwhile the mutual interference between the first silicon carbide module and the second silicon carbide module can be reduced; in addition, when the first silicon carbide module or the second silicon carbide module has overcurrent, the first silicon carbide module and the second silicon carbide module can be controlled to be turned off synchronously through the driving chip, so that the dynamic and static current equalizing effects are consistent, the problem of dynamic non-current equalization caused by turning off at different time is avoided, and the first silicon carbide module or the second silicon carbide module is prevented from being damaged.
Drawings
Fig. 1 is a first schematic diagram of a dual push-pull driving circuit according to an embodiment of the present invention;
FIG. 2 is a second schematic diagram of a dual push-pull driving circuit according to an embodiment of the present invention;
FIG. 3 is a detailed diagram of a dual push-pull driving circuit according to an embodiment of the present invention;
figure 4 is a schematic view of a silicon carbide module according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
As shown in fig. 1, an embodiment of the present invention provides a dual push-pull driving circuit based on parallel connection of silicon carbide modules, including a driving chip, a first push-pull driving circuit, a first silicon carbide module, a second push-pull driving circuit, and a second silicon carbide module, where the driving chip is connected to the first silicon carbide module through the first push-pull driving circuit, and the driving chip is further connected to the second silicon carbide module through the second push-pull driving circuit; the driving chip is used for controlling the first silicon carbide module and the second silicon carbide module to be synchronously switched on or switched off.
Specifically, two push-pull drive circuit include driver chip, first push-pull drive circuit, first carborundum module, second push-pull drive circuit and second carborundum module, wherein, driver chip, first push-pull drive circuit and first carborundum module constitute all the way, driver chip, second push-pull drive circuit and second carborundum module constitute another way, two ways are driven by same driver chip, can guarantee the uniformity of drive PWM (pulse width modulation) signal, avoid producing time delay scheduling problem because of driver chip difference, can solve the relatively poor problem of current carborundum module uniformity promptly, can reduce the mutual interference between first carborundum module and the second carborundum module simultaneously. On the other hand, for example, when the first silicon carbide module or the second silicon carbide module has an overcurrent, the first silicon carbide module and the second silicon carbide module can be controlled to be turned off synchronously through the driving chip, so that the dynamic and static current equalizing effects are consistent, the dynamic non-equalizing problem caused by the turn-off at different times is avoided, and the first silicon carbide module or the second silicon carbide module is prevented from being damaged.
The driving chip is used for transmitting PWM (pulse width modulation) signals of the MCU (microprocessing unit) to the high-voltage side from the low-voltage side in an isolated mode, and then the PWM signals enter the corresponding RC absorption circuits respectively.
Optionally, the double push-pull driving circuit based on the parallel connection of the silicon carbide modules further includes a first RC absorption circuit and a second RC absorption circuit, the first RC absorption circuit is connected to the driving chip and the first push-pull driving circuit, and the second RC absorption circuit is connected to the driving chip and the second push-pull driving circuit.
Specifically, as shown in fig. 2 and fig. 3, the dual push-pull driving circuit further includes a first RC absorption circuit and a second RC absorption circuit, the first RC absorption circuit includes a current-limiting resistor R1 and a filter capacitor C5, the second RC absorption circuit includes a current-limiting resistor R4 and a filter capacitor C10, the first RC absorption circuit is connected to the driving chip and the first push-pull driving circuit, the second RC absorption circuit is connected to the driving chip and the second push-pull driving circuit, and the first RC absorption circuit and the second RC absorption circuit are configured to perform interference filtering on a PWM (pulse width modulation) signal of the driving chip, so that the signal is transmitted to the corresponding push-pull circuit after being conditioned.
Optionally, the double push-pull driving circuit based on the parallel connection of the silicon carbide modules further includes a first driving resistance circuit and a second driving resistance circuit, the first driving resistance circuit is connected to the first push-pull driving circuit and the first silicon carbide module, the first driving resistance circuit is configured to adjust a charging and discharging current corresponding to the first silicon carbide module, the second driving resistance circuit is connected to the second push-pull driving circuit and the second silicon carbide module, and the second driving resistance circuit is configured to adjust a charging and discharging current corresponding to the second silicon carbide module.
Specifically, as shown in fig. 2 and fig. 3, the dual push-pull driving circuit further includes a first driving resistor circuit and a second driving resistor circuit, the first driving resistor circuit includes a diode D1, a driving resistor R2, and a driving resistor R3, the second driving resistor circuit includes a diode D6, a driving resistor R5, and a driving resistor R6, the first driving resistor circuit and the second driving resistor circuit are used to adjust the magnitude of the charging and discharging current of the driving circuit to the first silicon carbide module and the second silicon carbide module (the magnitude of the off-voltage spike and the switching loss of the collector-emitter are greatly affected), and the specific resistance value can be adjusted according to a double pulse test.
Optionally, the dual push-pull driving circuit based on the parallel connection of the silicon carbide modules further includes a first active clamp circuit and a second active clamp circuit, the first active clamp circuit is connected to the driving chip, the first driving resistor circuit and the first silicon carbide module, respectively, and the second active clamp circuit is connected to the driving chip, the second driving resistor circuit and the second silicon carbide module, respectively.
Specifically, as shown in fig. 2 and 3, the dual push-pull driving circuit further includes a first active clamp circuit and a second active clamp circuit, the first active clamp circuit includes a diode D2, a TVS (transient voltage suppression diode) D3 and a diode D5, the second active clamp circuit includes a diode D7, a TVS (transient voltage suppression diode) D8 and a diode D10, the first active clamp circuit is connected to the gate of the driving chip, the first driving resistor circuit and the first silicon carbide module, and the second active clamp circuit is connected to the gate of the driving chip, the second driving resistor circuit and the second silicon carbide module.
Optionally, the first active clamp circuit and the second active clamp circuit each comprise a transient voltage suppression diode for turning on when a collector-emitter turn-off voltage spike of the first silicon carbide module or the second silicon carbide module is higher than a set clamp voltage to feed back a collector voltage to an output terminal of the driver chip and a gate terminal of the first silicon carbide module or the second silicon carbide module.
Specifically, under abnormal conditions, when the turn-off voltage peak of the collector-emitter of the first silicon carbide module or the second silicon carbide module is higher than the set clamping voltage, the TVS (transient voltage suppressor) is turned on, the gate voltage is raised through the diode D2 or the diode D7, the turn-off of the gate signal is slowed down, the turn-off voltage of the collector-emitter is reduced, the upper bridge arm and the lower bridge arm are prevented from being directly connected, and therefore the first silicon carbide module and the second silicon carbide module are protected.
Optionally, when one of the first silicon carbide module and the second silicon carbide module is turned off due to overcurrent, the driving chip is configured to control the other of the first silicon carbide module and the second silicon carbide module to be turned off synchronously according to the fed-back collector voltage.
Specifically, the voltage of the collector is fed back to the output end of the driving chip U1 through the diode D5 or the diode D10, when the first silicon carbide module or the second silicon carbide module is turned off due to overcurrent, the other silicon carbide module takes the measure of raising the voltage of the gate and reducing the peak of the turn-off voltage, the two silicon carbide modules are kept turned off synchronously, the problem of dynamic non-uniform current caused by turn-off at different times is avoided, and the first silicon carbide module or the second silicon carbide module is prevented from being damaged.
Optionally, the silicon carbide module parallel-connection-based dual push-pull driving circuit further includes a first gate power supply clamp circuit and a second gate power supply clamp circuit, the first gate power supply clamp circuit is connected to the first silicon carbide module, and the second gate power supply clamp circuit is connected to the second silicon carbide module.
Specifically, as shown in fig. 2 and 3, the dual push-pull driving circuit further includes a first gate power clamp circuit including a diode D4, and a second gate power clamp circuit including a diode D9, and when the tube voltage of the diode D4 or the diode D9 is reduced to 0.3V, the gate voltage may be clamped to 15.3V, so as to prevent damage to the first silicon carbide module and the second silicon carbide module.
Optionally, the first push-pull driving circuit and the second push-pull driving circuit both include a PNP type triode, an NPN type triode, a filter capacitor, and an energy storage capacitor, a base of the PNP type triode and a base of the NPN type triode are both connected to the driving chip, and the first push-pull driving circuit and the second push-pull driving circuit are configured to take electricity and discharge electricity to the energy storage capacitor.
Specifically, as shown in fig. 2 and 3, the first push-pull driving circuit includes a PNP transistor Q1, an NPN triode Q2, filter capacitors C1 and C3, and energy storage capacitors C2 and C4, and the second push-pull driving circuit includes a PNP transistor Q3, an NPN triode Q4, filter capacitors C6 and C8, and energy storage capacitors C7 and C9, and when the silicon carbide module is in an on-off state or a conducting state, the push-pull circuit takes electricity and discharges electricity from the energy storage capacitors nearby, thereby completing corresponding functions.
The charges of the first silicon carbide module and the second silicon carbide module are charged and discharged in the independent push-pull circuits, so that an independent local small system is formed (the push-pull circuits are arranged close to the silicon carbide modules), mutual interference between the two parallel modules can be reduced, and the dynamic and static current equalizing effects are consistent.
Optionally, the first silicon carbide module and the second silicon carbide module are used for connecting any one phase upper bridge or lower bridge of a three-phase six-bridge topology of the motor controller in parallel.
Specifically, as shown in fig. 4, four silicon carbide modules form one phase of the motor controller, for example, the silicon carbide modules M1 and M2 are connected in parallel to form an upper bridge of one phase, the silicon carbide modules M3 and M4 are connected in parallel to form a lower bridge of one phase, the ac terminals are locked together by screws, the modules M1 and M2 share a high voltage positive electrode HV + by a film capacitor, and the silicon carbide modules M3 and M4 share a high voltage negative electrode HV-by a film capacitor. A driving chip from the upper bridge generates lower bridge driving signals PWM _ H1 and PWM _ H2 through a double push-pull driving circuit. A drive chip from the lower bridge generates lower bridge drive signals PWM _ L1 and PWM _ L2 through a double push-pull drive circuit.
Another embodiment of the present invention provides a motor controller, which includes the above dual push-pull driving circuit based on the parallel connection of silicon carbide modules.
Although the present disclosure has been described above, the scope of the present disclosure is not limited thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the spirit and scope of the present disclosure, and these changes and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. A double push-pull driving circuit based on parallel connection of silicon carbide modules is characterized by comprising a driving chip, a first push-pull driving circuit, a first silicon carbide module, a second push-pull driving circuit and a second silicon carbide module, wherein the driving chip is connected with the first silicon carbide module through the first push-pull driving circuit and is also connected with the second silicon carbide module through the second push-pull driving circuit; the driving chip is used for controlling the first silicon carbide module and the second silicon carbide module to be synchronously switched on or switched off.
2. The silicon carbide module parallel connection-based double push-pull driving circuit according to claim 1, further comprising a first RC absorption circuit and a second RC absorption circuit, wherein the first RC absorption circuit is connected with the driving chip and the first push-pull driving circuit, respectively, and the second RC absorption circuit is connected with the driving chip and the second push-pull driving circuit, respectively.
3. The silicon carbide module parallel connection-based dual push-pull driving circuit according to claim 1, further comprising a first driving resistor circuit and a second driving resistor circuit, wherein the first driving resistor circuit is connected to the first push-pull driving circuit and the first silicon carbide module, respectively, the first driving resistor circuit is configured to adjust a charging/discharging current corresponding to the first silicon carbide module, the second driving resistor circuit is connected to the second push-pull driving circuit and the second silicon carbide module, respectively, and the second driving resistor circuit is configured to adjust a charging/discharging current corresponding to the second silicon carbide module.
4. The silicon carbide module parallel-based dual push-pull driving circuit according to claim 3, further comprising a first active clamp circuit and a second active clamp circuit, wherein the first active clamp circuit is connected to the driving chip, the first driving resistor circuit and the first silicon carbide module, respectively, and the second active clamp circuit is connected to the driving chip, the second driving resistor circuit and the second silicon carbide module, respectively.
5. The silicon carbide module parallel-based dual push-pull drive circuit according to claim 4, wherein the first active clamp circuit and the second active clamp circuit each comprise a transient voltage suppression diode for opening to feed back an electrode voltage collector to an output of the drive chip and a gate terminal of the first silicon carbide module or the second silicon carbide module when a collector-emitter turn-off voltage spike of the first silicon carbide module or the second silicon carbide module is higher than a set clamp voltage.
6. The silicon carbide module parallel-based double push-pull driving circuit according to claim 5, wherein when one of the first silicon carbide module and the second silicon carbide module is turned off due to overcurrent, the driving chip is used for controlling the other of the first silicon carbide module and the second silicon carbide module to be turned off synchronously according to the fed-back collector voltage.
7. The silicon carbide module parallel dual push-pull drive circuit according to claim 1, further comprising a first gate power clamp and a second gate power clamp, the first gate power clamp coupled to the first silicon carbide module and the second gate power clamp coupled to the second silicon carbide module.
8. The silicon carbide module parallel connection-based double push-pull driving circuit according to claim 1, wherein the first push-pull driving circuit and the second push-pull driving circuit each include a PNP type triode, an NPN type triode, a filter capacitor, and an energy storage capacitor, a base of the PNP type triode and a base of the NPN type triode are both connected to the driving chip, and the first push-pull driving circuit and the second push-pull driving circuit are used for taking electricity and discharging electricity to the energy storage capacitor.
9. The silicon carbide module parallel-based dual push-pull drive circuit according to claim 1, wherein the first silicon carbide module and the second silicon carbide module are used for connecting any one phase upper bridge or lower bridge in parallel to form a three-phase six-bridge topology of a motor controller.
10. A motor controller comprising a silicon carbide module parallel based dual push-pull drive circuit according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211604416.5A CN115864793A (en) | 2022-12-13 | 2022-12-13 | Double-push-pull driving circuit based on parallel connection of silicon carbide modules and motor controller |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211604416.5A CN115864793A (en) | 2022-12-13 | 2022-12-13 | Double-push-pull driving circuit based on parallel connection of silicon carbide modules and motor controller |
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| CN202211604416.5A Pending CN115864793A (en) | 2022-12-13 | 2022-12-13 | Double-push-pull driving circuit based on parallel connection of silicon carbide modules and motor controller |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118100735A (en) * | 2024-04-18 | 2024-05-28 | 宁波尚进自动化科技有限公司 | Sinusoidal three-phase servo driver and wire bonding machine |
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2022
- 2022-12-13 CN CN202211604416.5A patent/CN115864793A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118100735A (en) * | 2024-04-18 | 2024-05-28 | 宁波尚进自动化科技有限公司 | Sinusoidal three-phase servo driver and wire bonding machine |
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Effective date of registration: 20240611 Address after: No. 98 Beihui Road, Huishan Industrial Transformation and Agglomeration Zone, Wuxi City, Jiangsu Province, China Applicant after: Wuxi Xingqu Power Technology Co.,Ltd. Country or region after: China Applicant after: Wuxi Xingqu Technology Co.,Ltd. Address before: No. 99, Beihui Road, Huishan District, Wuxi City, Jiangsu Province, 214181 Applicant before: Wuxi Xingqu Power Technology Co.,Ltd. Country or region before: China Applicant before: Wuxi Xingqu Technology Co.,Ltd. Applicant before: ZHEJIANG GEELY HOLDING GROUP Co.,Ltd. |