CN115863444A - Deep-groove electrode bridge-type structure nanometer air channel diode and preparation method thereof - Google Patents
Deep-groove electrode bridge-type structure nanometer air channel diode and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of semiconductor devices and micro-nano vacuum electronics, in particular to a nano air channel diode with a deep groove electrode bridge type structure and a preparation method thereof. The substrate is provided with a groove sunken from the upper surface to the bottom surface, a lower electrode matched with the groove in size is arranged in the groove, and two metal conducting layers are arranged on two sides of the groove respectively; a bridge-type upper electrode is laminated right above the lower electrode; the bridge-type upper electrode is made of a conductive material which can be elastically deformed under an external voltage, an arch-shaped structure is formed after a groove is formed in the bridge-type upper electrode, and the groove is located at one end close to the lower electrode and is communicated with the lower electrode to form an air channel between the bridge-type upper electrode and the lower electrode. The diode can relax the technological requirements of the lower electrode and the dielectric sacrificial layer, has the advantages of no fixedly supported dielectric sacrificial layer, small electrode overlapping area, obvious reduction of interelectrode capacitance and the like, does not depend on high nano processing equipment in the preparation process, and can be prepared in batches.
Description
Technical Field
The invention relates to the technical field of semiconductor devices and micro-nano vacuum electronics, in particular to a deep-groove electrode bridge type structure nano air channel diode and a preparation method thereof.
Background
The micro-nano air channel device is also called a micro-nano vacuum device, combines the advantages of the traditional solid electronic device and the vacuum electronic device, can carry out non-scattering ballistic transport on electrons in an air channel, and realizes high-speed, high-frequency and high-efficiency work while reducing loss. The nanometer air channel diode is a typical nanometer air channel device and has wide prospects in the aspects of switches, microwave rectification, mixing circuits and the like.
When an existing nanometer air channel device with a vertical structure is manufactured, a medium sacrificial layer between electrodes is usually removed by using a BOE corrosion mode and the like to form an air channel. This way of forming air channels by etching has the following problems:
1. the air channel size is greatly influenced by the process, so that the consistency of the device is difficult to control.
2. In the manufacturing process, the medium sacrificial layer with a larger area is still reserved as a supporting structure, so that the utilization rate of the effective emitting area of the device is lower, the parasitic capacitance of the device is larger, and the application of the device in high-frequency high-speed scenes and the like is limited.
3. The longitudinal dimension of the air channel is adjusted by controlling the thickness of the dielectric sacrificial layer. In order to avoid the problems of electrode conduction and the like during processing, the medium sacrificial layer has to be ensured to have good coverage and can completely cover the bottom layer lower electrode. When a small-scale nanometer air channel is needed, the thicknesses of the dielectric sacrificial layer and the lower electrode of the device are required, namely the thicknesses of the dielectric sacrificial layer and the lower electrode of the device cannot be too large, so that the film forming quality and the insulativity of the dielectric sacrificial layer and the current capacity of the lower electrode cannot be guaranteed, and the power endurance capability of the device is reduced.
Therefore, the nanometer air channel diode is designed, the process requirements of the lower electrode and the dielectric sacrificial layer are relaxed, the dielectric sacrificial layer is not required to be used as a support, and the nanometer air channel diode has positive significance for improving the effective emitting area and the power tolerance of a device.
Disclosure of Invention
In view of the above, the invention provides a deep-trench electrode bridge-type structure nanometer air channel diode and a preparation method thereof, the diode can relax the process requirements of a lower electrode and a dielectric sacrificial layer, has the advantages of no fixed support of the dielectric sacrificial layer, small electrode overlapping area, obvious reduction of inter-electrode capacitance and the like, and the preparation process does not depend on expensive nanometer processing equipment and can be prepared in batches.
The invention is realized by the following technical scheme:
a nanometer air channel diode with a deep groove electrode bridge structure comprises a substrate; the substrate is provided with a groove which is sunken from the upper surface to the bottom surface, a lower electrode matched with the groove in size is arranged in the groove, and two sides of the groove are respectively provided with a metal conducting layer; a bridge-type upper electrode is laminated right above the lower electrode; the bridge-type upper electrode is made of a conductive material which can be elastically deformed under an external voltage, an arch-shaped structure is formed after a groove is formed in the bridge-type upper electrode, and the groove is located at one end close to the lower electrode and is communicated with the lower electrode to form an air channel between the bridge-type upper electrode and the lower electrode.
Further, the center points of the bridge-type upper electrode, the bridge-type lower electrode and the groove are aligned, the groove in the bridge-type upper electrode completely covers the upper surface of the lower electrode, and the bridge-type upper electrode completely covers the outer surface of the groove.
Further, the substrate material is an insulating material or a semiconductor material, preferably silicon.
Further, the shape of the groove in the substrate is rectangular, inverted trapezoidal, inverted conical or inverted pyramid, and the like.
Furthermore, the lower electrode material is metal, transparent conductive film, graphene low-dimensional material, metalloid or semiconductor material, and is a transparent conductive material for enhancing light-assisted field emission.
Furthermore, both the lower electrode and the bridge-type upper electrode can be used as electrodes for electron emission; when the lower electrode applies negative bias and the bridge-type upper electrode applies positive bias, electrons are emitted from the lower electrode and collected through the bridge-type upper electrode; when the lower electrode is positively biased and the bridged upper electrode is negatively biased, electrons are emitted from the bridged upper electrode and collected by the lower electrode.
The preparation method of the air channel diode with the deep groove electrode bridge structure comprises the following steps:
s1, providing a silicon substrate with a groove structure:
s2, forming a lower electrode on the upper surface of the silicon substrate by using a semiconductor process, wherein the lower electrode is positioned in the groove and is matched with the size of the groove;
s3, depositing SiO on the surface of the structure obtained in the step 2 by adopting an atomic layer deposition method (ALD) or a plasma enhanced chemical vapor deposition method (PECVD) 2 Layer as a dielectric sacrificial layer, siO 2 The thickness of the layer is determined by the longitudinal dimension of a required air channel, and the air channel is positioned right above the lower electrode and completely covers the lower electrode;
s4, selectively removing part of the sacrificial layer on the upper surface of the structure obtained in the step 2 by adopting an alignment process, and only reserving the dielectric sacrificial layer coated on the lower electrode;
s5, carrying out secondary photoetching on the upper surface of the structure obtained in the S4 to manufacture a bridge-type upper electrode and two metal conducting layers, wherein the bridge-type upper electrode is coated on the dielectric sacrificial layer reserved in the S4, and the two metal conducting layers are positioned on two sides of the bridge-type upper electrode and are not in contact with the bridge-type upper electrode;
and S6, completely removing the dielectric sacrificial layer between the lower electrode and the bridge-type upper electrode by adopting a wet etching or dry etching process to form an air channel.
Further, the preparation process of the silicon substrate with the groove provided by the step S1 is as follows:
s1.1, depositing a layer of SiO with the thickness of 400nm on the surface of a clean silicon substrate by utilizing an oxidation process 2 With SiO 2 Etching SiO by photolithography process using the layer as mask 2 Layer of SiO 2 Obtaining a photoresist pattern of the groove on the layer;
s1.2, using SiO 2 As a mask, etching the silicon substrate under the groove by using an etching solution process to obtain the groove, wherein the etching solution is HF and HNO 3 Isotropic solution, the depth of the groove is 2 μm;
s1.3, passivating the surface by using a passivation solution to obtain a silicon substrate with a groove structure; the passivation solution is HNO 3 :H 2 O 2 :H 2 O＝3:1:1。
Further, the detailed process of S2 is:
s2.1, spin-coating photoresist on the upper surface of a silicon substrate, performing patterning treatment by adopting an ultraviolet lithography technology, and depositing a metal conducting layer with the thickness of 2 microns to fill the groove of the substrate;
and S2.2, stripping off the photoresist and the metal layer except the groove by adopting acetone to obtain the lower electrode.
Furthermore, the dielectric sacrificial layer material is metal, insulator or semiconductor which can be released by wet etching or dry etching.
Further, the thickness of the dielectric sacrificial layer is larger than that of the lower electrode.
After the technical scheme is adopted, the invention has the following advantages:
1. according to the invention, the bridge-type upper electrode is arranged right above the lower electrode, and the upper electrode and the lower electrode are naturally aligned, so that the problems of high electrode design difficulty, low electron collection efficiency and the like of the traditional vertical structure nanometer air channel device are solved. Secondly, the air channel in the structure is obtained by completely removing the sacrificial layer, the size of the air channel can be ensured to be smaller than the mean free path of electrons scattered in the air by controlling the thickness of the sacrificial layer, and the electrons can be ensured to carry out ballistic transport in the air without scattering.
2. The substrate with a groove structure is selected, the lower electrode is manufactured in the groove, so that the heat dissipation capacity of the whole diode is improved, meanwhile, the thick lower electrode is manufactured under the condition that the size of an air channel is not influenced, the power tolerance of a device is obviously improved, and the process requirements of the lower electrode and a medium sacrificial layer are greatly relaxed.
3. The nanometer air channel diode has no specific requirements on the shape of the electrode and is flexible in design. The overlapping area is controlled by removing the interelectrode medium, so that the parasitic capacitance is reduced, and the frequency characteristic of the capacitor is greatly improved.
4. The nanometer air channel diode can obviously reduce the technological requirements on the lower electrode and the dielectric sacrificial layer in the preparation process, does not depend on expensive nanometer processing equipment, and can realize the nanometer air channel only by combining common ultraviolet lithography with film deposition. The nano-air channel device is suitable for various substrates including insulating substrates, inorganic semiconductors and flexible organic semiconductors, and is generally suitable for nano-air channel devices with electrode structures made of conductors, semiconductors, transparent conductive films and graphene low-dimensional materials. Therefore, the method has the advantages of low cost, simplicity, convenience, feasibility, realization of large-area wafer-level preparation and excellent practicability.
Drawings
FIG. 1 is a schematic diagram of different groove structures formed on a substrate using a semiconductor etching process according to the present invention;
FIG. 2 is a schematic diagram of an embodiment of a deep trench electrode bridge type structure nano air channel diode;
FIG. 3 is a schematic diagram of an embodiment of a deep trench electrode bridge structure nano air channel diode;
FIG. 4 is a schematic flow chart of an embodiment of a process for manufacturing a deep trench electrode bridge type nano air channel diode;
reference numerals:
1. the structure comprises a silicon substrate, 21 and 22 photoresist, 31 and 33 metal conducting layers, 32 and lower electrodes, 41 and 42 dielectric sacrificial layers, 51 and 52 photoresist, 61 and 65 metal conducting layers, 63 and bridge upper electrodes, and 7 and nanometer air channels.
Detailed Description
The technical solution of the present invention is further explained with reference to the drawings and the embodiments.
Example 1
As shown in fig. 3, the nano air channel diode with the deep trench electrode bridge structure provided in this embodiment includes a silicon substrate; the silicon substrate is provided with a groove which is sunken from the upper surface to the bottom surface, a metal lower electrode matched with the groove in size is arranged in the groove, and two sides of the groove are respectively provided with a metal conducting layer; a bridge-type upper electrode is laminated right above the metal lower electrode; the bridge-type upper electrode is made of a metal material which can be elastically deformed under an applied voltage, a supply structure is formed after a groove is formed in the bridge-type upper electrode, the groove is located at one end close to the metal lower electrode and is communicated with the metal lower electrode to form an air channel between the bridge-type metal upper electrode and the metal lower electrode, the air channel completely covers the upper surface of the metal lower electrode, and the bridge-type metal upper electrode completely covers the outer surface of the air channel. The thickness of the air channel is larger than the depth of the groove on the silicon substrate, the thickness of the air channel is 30nm in the embodiment, and the depth of the groove on the substrate is 2 μm. The two metal conductive layers and the bridge-type upper electrode jointly form a coplanar waveguide structure.
When the device is used, a voltage is applied between the metal upper electrode and the metal lower electrode, electrons tunnel into an air channel from the metal upper/lower electrode under the action of an external electric field, and are collected by the metal upper/lower electrode under the action of the external electric field. Along with the increase of external bias voltage, the gap between the upper electrode and the lower electrode is gradually reduced due to the elastic deformation of the bridge-type upper electrode, so that the size of an air channel is reduced, the electric field intensity on the surface of the electrode is improved, and the emission current is increased.
As shown in fig. 4, this embodiment further provides a method for preparing the deep trench electrode bridge type nano air channel diode, including the following steps:
s1, providing a silicon substrate with a groove structure:
s1.1, depositing a layer of SiO with the thickness of 400nm on the surface of a clean silicon substrate by utilizing an oxidation process 2 With SiO 2 Etching SiO by photolithography process using the layer as mask 2 Layer of SiO 2 A photoresist pattern of the groove is obtained on the layer.
S1.2, using SiO 2 As a mask, etching the silicon substrate under the groove by using an etching solution process to obtain the groove, wherein the etching solution is HF and HNO 3 Isotropic solution with a groove depth of 2 μm.
S1.3, passivating the surface by using a passivation solution to obtain a silicon substrate with a groove structure; the passivation solution is HNO 3 :H 2 O 2 :H 2 O＝3:1:1。
S2, preparing a lower metal electrode:
s2.1, spin-coating photoresist on the upper surface of the silicon substrate, performing patterning treatment by adopting an ultraviolet lithography technology, and depositing a metal conducting layer with the thickness of 2 microns to fill the groove of the substrate.
And S2.2, stripping off the photoresist and the metal layer except the groove by adopting acetone to obtain the lower electrode.
S3, depositing SiO with the thickness of 30nm on the surface of the structure obtained in the step 2 by adopting an ALD (atomic layer deposition) or PECVD (plasma enhanced chemical vapor deposition) process 2 The layer is used as a medium sacrificial layer, and the upper surface of the metal lower electrode is completely covered by the medium sacrificial layer. At this time, siO was formed on the lower metal electrode to a thickness of 30nm 2 And the thickness of the isolation layer determines the longitudinal size of the micro-nano air channel of the device.
And S4, selectively removing part of the dielectric sacrifice on the upper surface of the structure obtained in the step 2 by adopting an alignment process, wherein the dielectric sacrifice only comprises a dielectric sacrifice layer coated on the lower electrode.
And S5, carrying out secondary photoetching on the upper surface of the structure obtained in the step S4 to obtain a bridge type metal upper electrode and two metal conducting layers, namely finishing the manufacturing of the coplanar waveguide. The bridge type metal upper electrode is coated on the dielectric sacrificial layer reserved in the S4, and the two metal conducting layers are located on two sides of the bridge type upper electrode and are not in contact with the bridge type upper electrode. The thickness of the two metal conducting layers is 400nm.
And S6, completely removing the dielectric sacrificial layer between the lower electrode and the bridge-type upper electrode by adopting wet etching or dry etching to form an air channel. The etching solution used in this example is a BOE solution.
The deep-groove electrode bridge-type structure nanometer air channel diode of the embodiment relaxes the process requirements on the lower metal electrode and the dielectric sacrificial layer, does not need the dielectric sacrificial layer as a support, and the sacrificial layer is used as a support and an isolation medium of the bridge-type metal upper electrode before release, so that the metal lower electrode and the bridge-type metal upper electrode are prevented from being communicated and conducting. The bridge type metal upper electrode can elastically deform under the external voltage, so that the size of an air channel is reduced, the electric field intensity on the surface of the electrode is improved, and the emission current is increased. In addition, the thick lower electrode is processed in the deep groove, the heat dissipation capacity of the lower electrode can be effectively improved, meanwhile, the thick lower electrode also has larger through-current capacity, and the power tolerance of the device is improved to a great extent. If the used substrate has a good heat transfer coefficient, the heat dissipation performance of the device can be further improved through the deep groove structure, and the power capacity of the device is improved. The nano-air channel device can be realized only by common ultraviolet lithography without depending on expensive nano-processing equipment, can be produced in batch, and can greatly promote the practical application of the nano-air channel device.
It should be noted that, although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that they can make modifications and equivalent substitutions without departing from the spirit and scope of the present invention, which should be construed as being limited only by the claims.
Claims (10)
1. A nanometer air channel diode with a deep groove electrode bridge structure comprises a substrate and is characterized in that: the substrate is provided with a groove which is sunken from the upper surface to the bottom surface, a lower electrode matched with the groove in size is arranged in the groove, and two sides of the groove are respectively provided with a metal conducting layer; a bridge-type upper electrode is laminated right above the lower electrode; the bridge-type upper electrode is made of a conductive material which can be elastically deformed under an external voltage, an arch-shaped structure is formed after a groove is formed in the bridge-type upper electrode, and the groove is located at one end close to the lower electrode and is communicated with the lower electrode to form an air channel between the bridge-type upper electrode and the lower electrode.
2. The deep trench electrode bridge nano air channel diode according to claim 1, wherein: the center points of the bridge-type upper electrode, the lower electrode and the groove are aligned, the groove in the bridge-type upper electrode completely covers the upper surface of the lower electrode, and the bridge-type upper electrode completely covers the outer surface of the groove.
3. The deep trench electrode bridge nano air channel diode according to claim 1, wherein: the substrate material is an insulating material or a semiconductor material, preferably silicon.
4. The deep trench electrode bridge nano air channel diode according to claim 1, wherein: the shape of the groove in the substrate is rectangular, inverted trapezoidal, inverted conical or inverted pyramid, and the like.
5. The deep trench electrode bridge nano air channel diode according to claim 1, wherein: the lower electrode material is a metal, a transparent conductive film, a graphene low-dimensional material, a metalloid or a semiconductor material, is used for enhancing light-assisted field emission, and is preferably a transparent conductive material.
6. The deep trench electrode bridge configuration nanometer air channel diode as claimed in any one of claims 1 to 5, wherein: the lower electrode and the bridge-type upper electrode can be used as electrodes for electron emission; when the lower electrode applies negative bias and the bridge-type upper electrode applies positive bias, electrons are emitted from the lower electrode and collected through the bridge-type upper electrode; when the lower electrode is positively biased and the bridged upper electrode is negatively biased, electrons are emitted from the bridged upper electrode and collected by the lower electrode.
7. The deep trench electrode bridge structure nano air channel diode as claimed in claim 1, wherein the preparation method of the deep trench electrode bridge structure nano air channel diode comprises the following steps:
s1, providing a silicon substrate with a groove structure:
s2, forming a lower electrode on the upper surface of the silicon substrate by using a semiconductor process, wherein the lower electrode is positioned in the groove and is matched with the groove in size;
s3, depositing SiO on the surface of the structure obtained in the step 2 by adopting an atomic layer deposition method (ALD) or a plasma enhanced chemical vapor deposition method (PECVD) 2 Layer as a dielectric sacrificial layer, siO 2 The thickness of the layer is determined by the longitudinal dimension of a required air channel, and the air channel is positioned right above the lower electrode and completely covers the lower electrode;
s4, selectively removing part of the sacrificial layer on the upper surface of the structure obtained in the step 2 by adopting an alignment process, and only reserving the dielectric sacrificial layer coated on the lower electrode;
s5, carrying out secondary photoetching on the upper surface of the structure obtained in the S4 to manufacture a bridge-type upper electrode and two metal conducting layers, wherein the bridge-type upper electrode is coated on the dielectric sacrificial layer reserved in the S4, and the two metal conducting layers are positioned on two sides of the bridge-type upper electrode and are not in contact with the bridge-type upper electrode;
and S6, completely removing the dielectric sacrificial layer between the lower electrode and the bridge-type upper electrode by adopting a wet etching or dry etching process to form an air channel.
8. The deep trench electrode bridge nano air channel diode as claimed in claim 7, wherein: the preparation process of the silicon substrate with the groove provided by the S1 comprises the following steps:
s1.1, depositing a layer of SiO with the thickness of 400nm on the surface of a clean silicon substrate by utilizing an oxidation process 2 With SiO 2 Etching SiO by photolithography process using the layer as mask 2 Layer of SiO 2 Obtaining a photoresist pattern of the groove on the layer;
s1.2, using SiO 2 As a mask, etching the silicon substrate under the groove by using an etching solution process to obtain the groove, wherein the etching solution is HF and HNO 3 Isotropic solution, the depth of the groove is 2 μm;
s1.3, passivating the surface by using a passivation solution to obtain a silicon substrate with a groove structure; the passivation solution is HNO 3 :H 2 O 2 :H 2 O＝3:1:1。
9. The deep trench electrode bridge nano air channel diode as claimed in claim 7, wherein: the detailed process of the S2 comprises the following steps:
s2.1, spin-coating photoresist on the upper surface of a silicon substrate, performing patterning treatment by adopting an ultraviolet lithography technology, and depositing a metal conducting layer with the thickness of 2 microns to fill the groove of the substrate;
and S2.2, stripping off the photoresist and the metal layer except the groove by adopting acetone to obtain the lower electrode.
10. The deep trench electrode bridge nano air channel diode as claimed in claim 7, wherein: the dielectric sacrificial layer is made of metal, insulator or semiconductor which can be released by wet etching or dry etching; the thickness of the dielectric sacrificial layer is larger than that of the lower electrode.
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| CN202310017316.0A CN115863444A (en) | 2023-01-06 | 2023-01-06 | Deep-groove electrode bridge-type structure nanometer air channel diode and preparation method thereof |
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| CN202310017316.0A CN115863444A (en) | 2023-01-06 | 2023-01-06 | Deep-groove electrode bridge-type structure nanometer air channel diode and preparation method thereof |
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