CN115859694B - Exhaust gas treatment simulation model construction method and device for semiconductor manufacturing equipment - Google Patents
Exhaust gas treatment simulation model construction method and device for semiconductor manufacturing equipment Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 279
- 239000004065 semiconductor Substances 0.000 title claims abstract description 181
- 238000004088 simulation Methods 0.000 title claims abstract description 88
- 238000010276 construction Methods 0.000 title claims description 19
- 239000007789 gas Substances 0.000 claims abstract description 123
- 239000002912 waste gas Substances 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 106
- 230000008569 process Effects 0.000 claims abstract description 77
- 239000000126 substance Substances 0.000 claims abstract description 45
- 238000007599 discharging Methods 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 33
- 238000006757 chemical reactions by type Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 12
- 230000000704 physical effect Effects 0.000 claims description 6
- 238000004514 thermodynamic simulation Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000013461 design Methods 0.000 abstract description 5
- 238000005457 optimization Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004134 energy conservation Methods 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 33
- 238000005406 washing Methods 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 16
- 238000001312 dry etching Methods 0.000 description 15
- 238000004523 catalytic cracking Methods 0.000 description 6
- 238000005094 computer simulation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 241000183024 Populus tremula Species 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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Abstract
The invention discloses a method and a device for constructing an exhaust gas treatment simulation model for semiconductor manufacturing equipment, wherein the method comprises the following steps: determining a semiconductor manufacturing equipment group and establishing a database of the semiconductor manufacturing equipment group; constructing a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process; establishing a chemical steady-state module linked with the discrete manufacturing module; based on the discrete manufacturing module and the chemical steady-state module, an exhaust gas treatment simulation model for displaying the exhaust gas generating, treating and discharging processes in real time is constructed and formed. The states of each stage of waste gas generation, treatment and emission are considered for simulation, so that the engineering consumption, the pipeline layout, the waste gas treatment effect and the like can be rapidly calculated in the initial design stage in an auxiliary mode, and more accurate references can be provided for capacity optimization, auxiliary equipment selection, energy conservation, emission reduction and the like.
Description
Technical Field
The invention belongs to the technical field of simulation of semiconductor production, and particularly relates to a method and a device for constructing an exhaust gas treatment simulation model for semiconductor manufacturing equipment.
Background
Semiconductors are widely used in integrated circuits, automotive electronics, consumer electronics, and the internet of things. With the continuous enhancement of the research and development of the domestic enterprise technology, new opportunities for development appear in the domestic semiconductor industry. The semiconductor industry belongs to the high and new technology industry, and is considered as the "clean" industry, but the processes of cleaning, photoetching, photoresist removing, drying and the like in the semiconductor production need to use a large amount of acid, alkali, organic solvents and a plurality of special gases, and the whole production process has large and various "three wastes" output.
Currently, research on exhaust gas treatment in semiconductor production is mainly focused on the development and design of exhaust gas treatment devices. For example, patent CN115518501a teaches a semiconductor waste gas treatment device comprising a reaction vessel comprising: the top cover is connected with an exhaust gas pipeline and an auxiliary gas pipeline; the shell is arranged below the top cover, and a reaction cavity is formed by matching the shell and the top cover; the heater penetrates through the wall surface of the shell and is positioned in the reaction cavity. The semiconductor waste gas treatment equipment that this scheme provided, the casing is inserted to the heater, and the dismouting of heater is simpler and more convenient, and dismouting work load reduces, and the dismouting reduces the space requirement, and the weight of top cap reduces, reduces maintenance cost.
With the intensive research of intelligent manufacturing, simulation technology is needed to realize analysis of a semiconductor manufacturing process, design and performance optimization of a semiconductor device, and research and development of products are accelerated. While less research is being directed to exhaust gas simulation modeling in semiconductor manufacturing processes. The prior art related to the field of waste gas can only perform simulation on a single chemical reaction process. For example, patent CN106156515a provides a method and a system for dynamic simulation of a fault of a double-stage catalytic cracking anti-re-system, which comprises: (1) establishing a knowledge database and integrating a fault database; (2) Based on DCS data and process model data of the industrial double-section catalytic cracking device, constructing a double-section catalytic cracking anti-regeneration system dynamic model, and constructing a double-section catalytic cracking anti-regeneration system dynamic model library; (3) Obtaining basic input data under different working conditions according to the knowledge database, and obtaining a steady-state working point of dynamic simulation; (4) Selecting a specific fault type from a fault database, converting the specific fault type into input deviation of a dynamic model, and performing fault dynamic simulation; (5) And verifying the fault type by using a fault intelligent analysis module, recording the simulation result into a fault database, and perfecting the database. A dual-stage catalytic cracking anti-re-system fault dynamic simulation system, comprising: the system comprises a DCS data acquisition module, a dynamic model base of a double-section catalytic cracking anti-regeneration system, a knowledge database, a fault database and a fault intelligent analysis module.
However, the treatment of exhaust gases from semiconductor manufacturing facilities belongs to the hybrid industry in terms of product type and process organization. The current simulation means cannot realize the full-flow simulation of the exhaust gas generation, treatment and discharge processes in the semiconductor manufacturing equipment.
Therefore, how to construct an exhaust gas treatment simulation model for a semiconductor manufacturing apparatus to achieve a full-flow simulation of the exhaust gas generation, treatment and emission process of the semiconductor manufacturing apparatus is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention provides a method and apparatus for constructing an exhaust gas treatment simulation model for a semiconductor manufacturing apparatus, by determining a semiconductor manufacturing apparatus group, establishing a database of the semiconductor manufacturing apparatus group, and establishing a discrete manufacturing module, the discrete manufacturing module collecting and responding to a semiconductor target manufacturing process, including a logic unit and a policy unit corresponding to the semiconductor target manufacturing process; establishing a chemical steady-state module linked with the discrete manufacturing module; based on the discrete manufacturing module and the chemical steady-state module, an exhaust gas treatment simulation model for displaying the exhaust gas generating, treating and discharging processes in real time is constructed and formed. The invention considers the states of each stage of waste gas generation, treatment and emission in various processes in the semiconductor manufacturing process, not only can rapidly assist in calculating engineering consumption, pipeline layout, waste gas treatment effect and the like in the initial stage of design, but also can provide more accurate reference values for capacity optimization, auxiliary equipment selection, energy conservation, emission reduction and the like.
In a first aspect, the present invention provides a method for constructing an exhaust gas treatment simulation model for a semiconductor manufacturing apparatus, comprising the steps of:
determining a semiconductor manufacturing equipment group and establishing a database of the semiconductor manufacturing equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a semiconductor target manufacturing process, and the discrete manufacturing module comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process;
establishing a chemical steady-state module linked with the discrete manufacturing module, and simulating the chemical reaction of waste gas in the process of manufacturing the semiconductor target by the chemical steady-state module;
based on the discrete manufacturing module and the chemical steady-state module, an exhaust gas treatment simulation model for displaying the exhaust gas generating, treating and discharging processes in real time is constructed and formed.
Further, the semiconductor target manufacturing process is a certain semiconductor manufacturing process of determining a semiconductor manufacturing equipment group;
the semiconductor manufacturing equipment group comprises semiconductor manufacturing process equipment and waste gas treatment equipment;
the database comprises semiconductor manufacturing process parameter data, exhaust gas generation working condition parameter data, exhaust gas treatment working condition parameter data and exhaust gas emission parameter data;
the semiconductor manufacturing process parameters comprise raw material components and process flows for semiconductor manufacturing, the exhaust gas generating working condition parameters comprise state parameters of all cavities in the semiconductor manufacturing process equipment, the exhaust gas treatment working condition parameters comprise exhaust gas treatment reaction type parameters and exhaust gas treatment reaction working condition parameters in the exhaust gas treatment equipment, and the exhaust gas emission parameters comprise physical property parameters of exhaust gas.
Further, a discrete manufacturing module is built, specifically comprising the following steps:
acquiring all corresponding semiconductor manufacturing processes based on the determined semiconductor manufacturing process equipment;
constructing logic units and strategy units corresponding to the semiconductor manufacturing processes;
constructing a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to the semiconductor target manufacturing process and converts the semiconductor manufacturing process parameter data into exhaust gas production condition parameter data and first exhaust gas emission parameter data.
Further, constructing logic units and strategy units corresponding to each semiconductor manufacturing process, specifically comprising the following steps:
traversing each cavity in the semiconductor manufacturing process equipment to give state parameter data of all the cavities;
determining raw material composition data and process flow data for performing semiconductor manufacturing based on each semiconductor manufacturing process;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving out the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the semiconductor manufacturing process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and state parameter data of each cavity in the semiconductor manufacturing process equipment;
and providing a corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data through state parameter data and logic units of all cavities in the semiconductor manufacturing process equipment, and constructing a strategy unit of the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data.
Further, the first exhaust emission parameter includes a type of exhaust emission.
Further, the chemical steady-state module linked with the discrete manufacturing module is established, and the method specifically comprises the following steps:
constructing a first sub-module simulating exhaust gas generation in semiconductor manufacturing based on semiconductor manufacturing process equipment;
establishing linkage between the first submodule and the discrete manufacturing module, and transmitting working condition parameter data generated by waste gas to the first submodule by the discrete manufacturing module;
disassembling the waste gas treatment equipment into a plurality of minimum structural units, respectively forming corresponding minimum structural simulation units for waste gas treatment thermodynamic simulation, and endowing the minimum structural simulation units with waste gas treatment working condition parameters of each minimum structural unit, wherein the minimum structural units are a single component for completing independent process steps in waste gas treatment in the waste gas treatment equipment;
constructing a second sub-module for simulating waste gas treatment and emission, and calling and integrating a plurality of minimum structure simulation units by the second sub-module based on waste gas treatment reaction type parameters;
and combining the first sub-module and the second sub-module, wherein the first sub-module transmits the working condition parameter data and the semiconductor manufacturing process parameter data generated by the waste gas into the second sub-module to simulate the waste gas treatment and emission, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
Further, the linkage between the first sub-module and the discrete manufacturing module is established, and the method specifically comprises the following steps:
the discrete manufacturing module collects and responds to the semiconductor target manufacturing process, and determines the working condition parameter data of the waste gas generation based on the semiconductor manufacturing process parameter data;
and constructing a linkage instruction module for linkage of the first sub-module and the discrete manufacturing module, and calling the semiconductor manufacturing process parameter data and the determined exhaust gas generation working condition parameter data into the first sub-module by the linkage instruction module through sending a calling instruction.
Further, the second submodule retrieves and integrates a plurality of minimum structural simulation units based on the exhaust-gas treatment reaction type parameter, and specifically includes the following steps:
the second submodule gives out a process flow of waste gas treatment based on the waste gas treatment reaction type parameter;
based on the process flow of the waste gas treatment, the corresponding minimum structure simulation unit is called and integrated.
Further, the simulation of the exhaust treatment and the exhaust by the second submodule comprises simulation of an exhaust treatment working condition parameter and a second exhaust emission parameter, wherein the second exhaust emission parameter is the exhaust emission, the exhaust rate, the temperature and the pressure of the exhaust.
In a second aspect, the present invention also provides an exhaust gas treatment simulation model construction apparatus for a semiconductor manufacturing device, using the above-described exhaust gas treatment simulation model construction method for a semiconductor manufacturing device, comprising:
acquiring a component, determining a semiconductor manufacturing equipment group, and acquiring and responding to a semiconductor target manufacturing process;
the method comprises the steps of constructing a component, constructing a database of a semiconductor manufacturing equipment group, constructing a discrete manufacturing module, constructing a chemical steady-state module linked with the discrete manufacturing module, simulating the chemical reaction of waste gas in the process of manufacturing a semiconductor target by the chemical steady-state module, and constructing and forming a waste gas treatment simulation model for displaying the process of generating, treating and discharging the waste gas in real time.
The invention provides a method and a device for constructing an exhaust gas treatment simulation model for semiconductor manufacturing equipment, which at least comprise the following beneficial effects:
(1) The states of various stages of waste gas generation, treatment and emission in various processes in the semiconductor manufacturing process are considered to perform simulation, so that the engineering consumption, the pipeline layout, the waste gas treatment effect and the like can be rapidly calculated in an initial design stage in an auxiliary mode, and more accurate references can be provided for capacity optimization, auxiliary equipment selection, energy conservation, emission reduction and the like.
(2) By determining the logic unit and the strategy unit corresponding to the semiconductor manufacturing process, the discrete manufacturing module for simulating the exhaust gas generating working condition and the exhaust gas emission related to the first exhaust gas emission parameter is built, and the simulation of the exhaust gas generating source end are accurately realized.
(3) When the waste gas treatment and emission processes are simulated, the waste gas treatment equipment is disassembled to form a minimum structural unit, so that the subsequent unitized modeling is convenient, the waste gas treatment equipment is combined according to different waste gas treatment reaction mechanisms, and all waste gas treatment working conditions can be simulated to the greatest extent.
(4) The linkage instruction module can realize linkage of the discrete manufacturing module and the chemical steady-state module, and based on calling of the working condition parameter data generated by the waste gas, functions of the two modules are exerted, construction of a waste gas treatment simulation model is completed, and simulation display of the whole flow of waste gas generation, treatment and emission is realized.
Drawings
FIG. 1 is a schematic flow diagram of a method for constructing an exhaust gas treatment simulation model for a semiconductor manufacturing apparatus according to the present invention;
FIG. 2 is a flow chart of a discrete manufacturing module according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a discrete manufacturing module for constructing a simulated wafer etching process according to the present invention;
FIG. 4 is a schematic flow chart of a process for establishing a chemical steady-state module according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a chemical steady-state module for establishing a wafer etching process and plasma washing according to the present invention;
FIG. 6 is a schematic diagram showing the disassembly of the minimum structural unit of the plasma washing equipment provided by the invention;
FIG. 7 is a schematic diagram of the internal architecture of an exhaust treatment simulation model for a semiconductor manufacturing apparatus provided by the present invention;
fig. 8 is a schematic structural diagram of an exhaust gas treatment simulation model construction apparatus for semiconductor manufacturing equipment according to the present invention.
Detailed Description
In order to better understand the above technical solutions, the following detailed description will be given with reference to the accompanying drawings and specific embodiments. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, the "plurality" generally includes at least two.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a product or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such product or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a commodity or device comprising such element.
From the point of view of product type and production process organization, the manufacturing industry is generally divided into two types of flow production and discrete manufacturing. In the production process of the semiconductor manufacturing equipment, the source end of the waste gas generation (i.e. the semiconductor manufacturing process equipment performs the semiconductor manufacturing stage) belongs to discrete manufacturing according to the difference of front end production processes, and is produced in a continuous flow inside each equipment of the waste gas treatment equipment (i.e. each process stage of waste gas treatment).
The production process of discrete manufacturing can be interrupted, the physical shape of the raw materials is mainly changed and assembled, no substance is basically changed in the production process, and the raw materials are usually solid. The production process of the flow production cannot be interrupted, the production is carried out continuously or in batches, and physical or chemical methods such as mixing, separating, crushing, heating and the like are carried out on the raw materials, wherein the raw materials can be in a gaseous state or a solid state.
For the simulation of the exhaust gas treatment of the semiconductor manufacturing equipment, the production type of discrete manufacturing needs to be considered, and the process condition in the exhaust gas treatment process needs to be reflected at the same time.
Thus, in order to realize simulation models of two different production types of exhaust gas generation source side and exhaust gas treatment, as shown in fig. 1, the present invention provides an exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus, comprising the steps of:
determining a semiconductor manufacturing equipment group and establishing a database of the semiconductor manufacturing equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a semiconductor target manufacturing process, and the discrete manufacturing module comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process;
establishing a chemical steady-state module linked with the discrete manufacturing module, and simulating the chemical reaction of waste gas in the process of manufacturing the semiconductor target by the chemical steady-state module;
based on the discrete manufacturing module and the chemical steady-state module, an exhaust gas treatment simulation model for displaying the exhaust gas generating, treating and discharging processes in real time is constructed and formed.
The semiconductor target manufacturing process is a certain semiconductor manufacturing process for determining a semiconductor manufacturing equipment group;
the semiconductor manufacturing equipment group comprises semiconductor manufacturing process equipment and waste gas treatment equipment;
the database comprises semiconductor manufacturing process parameter data, exhaust gas generation working condition parameter data, exhaust gas treatment working condition parameter data and exhaust gas emission parameter data;
the semiconductor manufacturing process parameters comprise raw material components and process flows for semiconductor manufacturing, the exhaust gas generating working condition parameters comprise state parameters of all cavities in the semiconductor manufacturing process equipment, the exhaust gas treatment working condition parameters comprise exhaust gas treatment reaction type parameters and exhaust gas treatment reaction working condition parameters in the exhaust gas treatment equipment, and the exhaust gas emission parameters comprise physical property parameters of exhaust gas.
Basic programs/software for building the discrete manufacturing module and the chemical steady-state module can be directly adopted in the prior art, such as Plant formulation, autoMod, flexsim, witness, anyLogic, PRO/II, aspen Hysys, aspen Plus, gPROMS, chemCAD and the like, and single discrete manufacturing and chemical steady-state Simulation can be realized, and the method is not limited in detail.
According to the technical scheme, states of each process waste gas generation, treatment and emission stage in the semiconductor manufacturing process are considered, simulation is carried out, the constructed waste gas treatment simulation model can realize linkage of the discrete manufacturing module and the chemical steady-state module, functions of the two modules are played based on calling of waste gas generation working condition parameter data, and simulation display of the whole flow of waste gas generation, treatment and emission is realized.
In this embodiment, the determined semiconductor manufacturing equipment set is an etching equipment set of a wafer. The equipment set can perform various etching treatment processes of wafers, the following example uses a semiconductor target manufacturing process for collecting response as a dry etching process in wafer etching, and the waste gas treatment adopted for waste gas generated by the dry etching process is plasma water washing.
Wherein the semiconductor manufacturing process equipment is etching equipment, and the waste gas treatment equipment is the same as the etching equipmentIon water washing equipment. The semiconductor manufacturing process parameters comprise raw material components for semiconductor manufacturing, namely gas medium in dry etching process, including O 2 Ar and N 2 And the like, and also comprises a technological process of semiconductor manufacture, namely a process of dry etching.
The exhaust gas generating working condition parameters comprise the state parameters of all cavities in the semiconductor manufacturing process equipment, wherein the state parameters of all cavities are working condition states, 4 cavities exist in the etching equipment in the embodiment, each cavity is in different working condition states, the reactions in the cavities are different in different working condition states, and the exhaust gas generating working condition parameters comprise all the working condition states related to each cavity in the 4 cavities.
The exhaust gas treatment condition parameters include an exhaust gas treatment reaction type parameter in the exhaust gas treatment device and an exhaust gas treatment reaction condition parameter, in this embodiment, the exhaust gas treatment reaction type parameter is a chemical reaction in the plasma water washing, and the exhaust gas treatment reaction condition parameter is a condition parameter of the chemical reaction in the plasma water washing, such as a temperature, a time, an amount of a reactant, and the like.
The exhaust emission parameters include physical properties of the exhaust, i.e., the kind of exhaust, the amount of exhaust, the rate of exhaust, the temperature, the pressure, etc.
Taking a dry etching process in wafer etching as an example, the method for constructing the exhaust gas treatment simulation comprises the following steps:
determining a wafer etching equipment set and establishing a database of the wafer etching equipment set;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a dry etching process, and the discrete manufacturing module comprises a logic unit and a strategy unit corresponding to the wafer dry etching process;
establishing a chemical steady-state module linked with the discrete manufacturing module, wherein the chemical steady-state module simulates the chemical reaction of waste gas in the dry etching process;
based on the discrete manufacturing module and the chemical steady-state module, an exhaust gas treatment simulation model for displaying the exhaust gas generating, treating and discharging processes in real time is constructed and formed.
As shown in fig. 2, the discrete manufacturing module is built, specifically comprising the following steps:
acquiring all corresponding semiconductor manufacturing processes based on the determined semiconductor manufacturing process equipment;
constructing logic units and strategy units corresponding to the semiconductor manufacturing processes;
constructing a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to the semiconductor target manufacturing process and converts the semiconductor manufacturing process parameter data into exhaust gas production condition parameter data and first exhaust gas emission parameter data.
The method for constructing the logic unit and the strategy unit corresponding to each semiconductor manufacturing process specifically comprises the following steps:
traversing each cavity in the semiconductor manufacturing process equipment to give state parameter data of all the cavities;
determining raw material composition data and process flow data for performing semiconductor manufacturing based on each semiconductor manufacturing process;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving out the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the semiconductor manufacturing process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and state parameter data of each cavity in the semiconductor manufacturing process equipment;
and providing a corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data through state parameter data and logic units of all cavities in the semiconductor manufacturing process equipment, and constructing a strategy unit of the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data.
The discrete manufacturing module has the capability of simulating the exhaust gas generation process through the construction of the logic unit and the strategy unit, and is converted into the output of the exhaust gas generation working condition parameter and the first exhaust gas emission parameter through the acquisition and the identification of the semiconductor target manufacturing process.
Taking a wafer dry etching process as an example, as shown in fig. 3, a discrete manufacturing module is built, and the discrete manufacturing module converts gas medium data of wafer dry etching and flow data of the etching process into working condition state data of each cavity of etching equipment, chemical reaction data in plasma water washing, condition parameter data of chemical reaction in the plasma water washing and physical property parameter data of discharged waste gas; wherein, the physical property parameter data of the exhaust gas mainly refer to the kind data of the exhaust gas;
the method specifically comprises the following steps:
based on the determined etching equipment, acquiring all corresponding etching processes;
constructing a logic unit and a strategy unit corresponding to each etching process;
constructing a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to the dry etching process, and converts etching process parameter data into exhaust gas generation working condition parameter data and first exhaust gas emission parameter data.
Constructing a logic unit and a strategy unit corresponding to each etching process, which specifically comprises the following steps:
traversing each cavity in the semiconductor manufacturing process equipment to give state parameter data of all the cavities;
determining raw material component data and process flow data for etching based on each etching process;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving out the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the etching process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and state parameter data of each cavity in the etching equipment;
and providing a corresponding relation between the etching process parameter data and the first exhaust emission parameter data through state parameter data and logic units of all cavities in the etching equipment, and constructing a strategy unit of the corresponding relation between the etching process parameter data and the first exhaust emission parameter data.
As shown in fig. 4, the chemical steady-state module linked with the discrete manufacturing module is established, and specifically comprises the following steps:
constructing a first sub-module simulating exhaust gas generation in semiconductor manufacturing based on semiconductor manufacturing process equipment;
establishing linkage between the first submodule and the discrete manufacturing module, and transmitting working condition parameter data generated by waste gas to the first submodule by the discrete manufacturing module;
disassembling the waste gas treatment equipment into a plurality of minimum structural units, respectively forming corresponding minimum structural simulation units for waste gas treatment thermodynamic simulation, and endowing the minimum structural simulation units with waste gas treatment working condition parameters of each minimum structural unit, wherein the minimum structural units are a single component for completing independent process steps in waste gas treatment in the waste gas treatment equipment;
constructing a second sub-module for simulating waste gas treatment and emission, and calling and integrating a plurality of minimum structure simulation units by the second sub-module based on waste gas treatment reaction type parameters;
and combining the first sub-module and the second sub-module, wherein the first sub-module transmits the working condition parameter data and the semiconductor manufacturing process parameter data generated by the waste gas into the second sub-module to simulate the waste gas treatment and emission, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
The linkage between the first sub-module and the discrete manufacturing module is established, and the method specifically comprises the following steps:
the discrete manufacturing module collects and responds to the semiconductor target manufacturing process, and determines the working condition parameter data of the waste gas generation based on the semiconductor manufacturing process parameter data;
constructing a linkage instruction module for linking the first sub-module and the discrete manufacturing module, and calling the semiconductor manufacturing process parameter data and the determined exhaust gas generation working condition parameter data into the first sub-module by the linkage instruction module through sending a calling instruction;
the first submodule receives the working condition parameter data and the semiconductor manufacturing process parameter data of the waste gas, and transmits the working condition parameter data and the semiconductor manufacturing process parameter data to the second submodule to simulate waste gas treatment and emission.
The second submodule is used for calling and integrating a plurality of minimum structure simulation units based on the exhaust gas treatment reaction type parameters, and specifically comprises the following steps of:
the second submodule gives out a process flow of waste gas treatment based on the waste gas treatment reaction type parameter;
based on the process flow of the waste gas treatment, the corresponding minimum structure simulation unit is called and integrated.
The simulation of the exhaust treatment and the exhaust by the second submodule comprises simulation of exhaust treatment working condition parameters and second exhaust emission parameters, wherein the second exhaust emission parameters are the emission amount, the emission rate, the temperature and the pressure of the exhaust.
The single waste gas treatment equipment can compound a plurality of physical and chemical reactions, and the working condition parameters of the minimum structural unit under each physical and chemical reaction are different. Thus, in performing a steady state simulation of chemical industry, each of the physicochemical reactions is expressed in combination by retrieving and integrating the smallest structural simulation unit used for thermodynamic simulation of the exhaust treatment.
Taking wafer dry etching and plasma water washing as examples, as shown in fig. 5, a chemical steady-state module of the wafer etching process and the plasma water washing is established, and specifically comprises the following steps:
based on etching equipment, a first sub-module for simulating waste gas generation in etching is constructed;
establishing linkage between the first submodule and the discrete manufacturing module, and transmitting working condition parameter data generated by waste gas to the first submodule by the discrete manufacturing module;
disassembling the plasma washing equipment into a plurality of minimum structural units, respectively forming corresponding minimum structural simulation units for thermodynamic simulation of waste gas treatment, and endowing the minimum structural simulation units with waste gas treatment working condition parameters of each minimum structural unit, wherein the minimum structural units are a single component for completing independent process steps in waste gas treatment in the plasma washing equipment;
constructing a second sub-module for simulating waste gas treatment and emission, and calling and integrating a plurality of minimum structure simulation units by the second sub-module based on the plasma water washing reaction type parameters;
as shown in fig. 6, the minimum structural unit in this embodiment is a single component of the plasma water washing apparatus for completing an independent process step in the waste gas treatment, and the single component is generally a component of the plasma water washing apparatus, such as a plasma torch, a water curtain reaction chamber, a primary water washing, a secondary water washing, a waste water pump, a circulating pump, a water cooling wall, and the like, and the minimum structural simulation units of the above unit components are disassembled, then are assembled and integrated;
and combining the first sub-module and the second sub-module, wherein the first sub-module transmits the working condition parameter data and the etching process parameter data generated by the waste gas into the second sub-module to simulate the waste gas treatment and emission, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
The linkage between the first sub-module and the discrete manufacturing module is established, and the method specifically comprises the following steps:
the discrete manufacturing module collects and responds to the dry etching process, and determines the working condition parameter data of the waste gas generation based on the etching process parameter data;
and constructing a linkage instruction module for linkage of the first sub-module and the discrete manufacturing module, and calling the etching process parameter data and the determined exhaust gas generation working condition parameter data into the first sub-module by the linkage instruction module through sending a calling instruction.
The second submodule is used for calling and integrating a plurality of minimum structure simulation units based on the plasma reaction type parameters, and specifically comprises the following steps:
the second submodule gives out a process flow of waste gas treatment based on the plasma reaction type parameter;
based on the process flow of the waste gas treatment, the corresponding minimum structure simulation unit is called and integrated.
The simulation of the exhaust treatment and the exhaust by the second submodule comprises simulation of exhaust treatment working condition parameters and second exhaust emission parameters, wherein the second exhaust emission parameters are the emission amount, the emission rate, the temperature and the pressure of the exhaust.
The second submodule in the exhaust gas treatment simulation model for simulating the wafer dry etching and the plasma water washing comprises condition parameters for simulating the chemical reaction in the plasma water washing and the chemical reaction in the plasma water washing, and the discharge amount, the discharge rate, the temperature, the pressure and the like of the discharged exhaust gas.
And building a chemical steady-state module for simulating wafer dry etching and plasma washing, building an exhaust gas treatment simulation model comprising a discrete manufacturing module and the chemical steady-state module, embedding a linkage instruction module into the exhaust gas reaction simulation model, and completing the construction of the exhaust gas treatment simulation model for wafer etching, and displaying the processes of generating, treating and discharging the exhaust gas in real time.
The discrete manufacturing module presents the first exhaust emission parameter data in real time, and in addition, the linkage instruction module calls the working condition state data of each cavity in the etching equipment to enter the chemical steady-state module, and presents the second exhaust emission parameter data in real time.
As shown in fig. 7, the real-time display of the generation, treatment and emission of the exhaust gas is realized through the data transmission and simulation of the discrete manufacturing module, the chemical steady-state module and the linkage instruction module in the exhaust gas treatment simulation model. The semiconductor feedstock components give the original parameters 1-4, the cavities also give cavities 1-4, the state parameters of each cavity are identified as states 1-1, … …,4-2, etc. After the treatment of the discrete manufacturing module, the working condition state of the cavity can be identified by codes such as A, B, C … …, and the combination of the working condition states is represented by the combination of the codes, such as ABCD, ACDE … …, and the like. Under the action of the linkage instruction module, the discrete manufacturing module and the chemical steady-state module jointly realize real-time display of waste gas generation, treatment and emission.
As shown in fig. 8, the present invention also provides an exhaust gas treatment simulation model construction apparatus for a semiconductor manufacturing device, adopting the above-described exhaust gas treatment simulation model construction method for a semiconductor manufacturing device, comprising:
acquiring a component, determining a semiconductor manufacturing equipment group, and acquiring and responding to a semiconductor target manufacturing process;
the method comprises the steps of constructing a component, constructing a database of a semiconductor manufacturing equipment group, constructing a discrete manufacturing module, constructing a chemical steady-state module linked with the discrete manufacturing module, simulating the chemical reaction of waste gas in the process of manufacturing a semiconductor target by the chemical steady-state module, and constructing and forming a waste gas treatment simulation model for displaying the process of generating, treating and discharging the waste gas in real time.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention. It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. An exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus, comprising the steps of:
determining a semiconductor manufacturing equipment group and establishing a database of the semiconductor manufacturing equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a semiconductor target manufacturing process, and the discrete manufacturing module comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process;
establishing a chemical steady-state module linked with the discrete manufacturing module, and simulating the chemical reaction of waste gas in the process of manufacturing the semiconductor target by the chemical steady-state module;
based on the discrete manufacturing module and the chemical steady-state module, constructing and forming an exhaust gas treatment simulation model for displaying the exhaust gas generating, treating and discharging processes in real time;
the semiconductor manufacturing equipment group comprises semiconductor manufacturing process equipment and waste gas treatment equipment, and the database comprises semiconductor manufacturing process parameter data, waste gas generation working condition parameter data, waste gas treatment working condition parameter data and waste gas emission parameter data;
the method for establishing the chemical steady-state module linked with the discrete manufacturing module specifically comprises the following steps:
constructing a first sub-module simulating exhaust gas generation in semiconductor manufacturing based on semiconductor manufacturing process equipment;
establishing linkage between the first submodule and the discrete manufacturing module, and transmitting working condition parameter data generated by waste gas to the first submodule by the discrete manufacturing module;
constructing a second sub-module for simulating waste gas treatment and emission;
combining a first sub-module and a second sub-module, wherein the first sub-module transmits the working condition parameter data and the semiconductor manufacturing process parameter data generated by the waste gas into the second sub-module to simulate the waste gas treatment and emission, and a chemical steady-state module simulating the chemical reaction of the waste gas is established;
the linkage between the first sub-module and the discrete manufacturing module is established, and the method specifically comprises the following steps:
the discrete manufacturing module collects and responds to the semiconductor target manufacturing process, and determines the working condition parameter data of the waste gas generation based on the semiconductor manufacturing process parameter data;
and constructing a linkage instruction module for linkage of the first sub-module and the discrete manufacturing module, and calling the semiconductor manufacturing process parameter data and the determined exhaust gas generation working condition parameter data into the first sub-module by the linkage instruction module through sending a calling instruction.
2. The exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor target manufacturing process is a certain semiconductor manufacturing process that determines a semiconductor manufacturing apparatus group;
the semiconductor manufacturing process parameters comprise raw material components and process flows of semiconductor manufacturing, the exhaust gas generating condition parameters comprise state parameters of various cavities in the semiconductor manufacturing process equipment, the exhaust gas treatment condition parameters comprise exhaust gas treatment reaction type parameters and exhaust gas treatment reaction condition parameters in the exhaust gas treatment equipment, and the exhaust gas emission parameters comprise physical property parameters of exhaust gas.
3. The exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus according to claim 2, wherein the discrete manufacturing module is constructed, comprising the steps of:
acquiring all corresponding semiconductor manufacturing processes based on the determined semiconductor manufacturing process equipment;
constructing logic units and strategy units corresponding to the semiconductor manufacturing processes;
constructing a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to the semiconductor target manufacturing process and converts the semiconductor manufacturing process parameter data into exhaust gas production condition parameter data and first exhaust gas emission parameter data.
4. The exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus according to claim 3, wherein the logic unit and the strategy unit corresponding to each semiconductor manufacturing process are constructed, comprising the steps of:
traversing each cavity in the semiconductor manufacturing process equipment to give state parameter data of all the cavities;
determining raw material composition data and process flow data for performing semiconductor manufacturing based on each semiconductor manufacturing process;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving out the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the semiconductor manufacturing process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and state parameter data of each cavity in the semiconductor manufacturing process equipment;
and providing a corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data through state parameter data and logic units of all cavities in the semiconductor manufacturing process equipment, and constructing a strategy unit of the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data.
5. The exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus according to claim 4, wherein the first exhaust gas emission parameter includes a type of exhaust gas to be emitted.
6. The method of constructing an exhaust gas treatment simulation model for a semiconductor manufacturing apparatus according to claim 2, wherein establishing a chemical steady-state module in linkage with the discrete manufacturing module further comprises:
disassembling the waste gas treatment equipment into a plurality of minimum structural units, respectively forming corresponding minimum structural simulation units for waste gas treatment thermodynamic simulation, and endowing the minimum structural simulation units with waste gas treatment working condition parameters of each minimum structural unit, wherein the minimum structural units are a single component for completing independent process steps in waste gas treatment in the waste gas treatment equipment;
the second sub-module retrieves and integrates a plurality of minimum structural simulation units based on the exhaust treatment reaction type parameter.
7. The exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus according to claim 6, wherein the second sub-module retrieves and integrates a plurality of minimum structural simulation units based on the exhaust gas treatment reaction type parameter, specifically comprising the steps of:
the second submodule gives out a process flow of waste gas treatment based on the waste gas treatment reaction type parameter;
based on the process flow of the waste gas treatment, the corresponding minimum structure simulation unit is called and integrated.
8. The method of claim 1, wherein the simulating of the exhaust treatment and emissions by the second sub-module comprises simulating an exhaust treatment operating parameter and a second exhaust emission parameter, wherein the second exhaust emission parameter is an exhaust emission, an exhaust rate, a temperature, and a pressure of the exhaust.
9. An exhaust gas treatment simulation model construction apparatus for a semiconductor manufacturing device, characterized by employing the exhaust gas treatment simulation model construction method for a semiconductor manufacturing device according to any one of claims 1 to 8, comprising:
acquiring a component, determining a semiconductor manufacturing equipment group, and acquiring and responding to a semiconductor target manufacturing process;
the method comprises the steps of constructing a component, constructing a database of a semiconductor manufacturing equipment group, constructing a discrete manufacturing module, constructing a chemical steady-state module linked with the discrete manufacturing module, simulating the chemical reaction of waste gas in the process of manufacturing a semiconductor target by the chemical steady-state module, and constructing and forming a waste gas treatment simulation model for displaying the process of generating, treating and discharging the waste gas in real time.
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