CN115859694A - Method and device for constructing exhaust gas treatment simulation model for semiconductor manufacturing equipment - Google Patents
Method and device for constructing exhaust gas treatment simulation model for semiconductor manufacturing equipment Download PDFInfo
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Abstract
The invention discloses a method and a device for constructing an exhaust gas treatment simulation model for semiconductor manufacturing equipment, wherein the method comprises the following steps: determining a semiconductor manufacturing equipment group, and establishing a database of the semiconductor manufacturing equipment group; building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process; establishing a chemical steady-state module linked with the discrete manufacturing module; and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time based on the discrete manufacturing module and the chemical steady-state module. The states of stages of waste gas generation, treatment and emission are considered, simulation is carried out, engineering consumption, pipeline layout, waste gas treatment effect and the like can be rapidly calculated in an auxiliary mode at the initial design stage, and accurate references can be provided for capacity optimization, auxiliary equipment type selection, energy conservation and emission reduction and the like.
Description
Technical Field
The invention belongs to the technical field of simulation of semiconductor production, and particularly relates to a method and a device for constructing a waste gas treatment simulation model of semiconductor manufacturing equipment.
Background
Semiconductors have been widely used in the fields of integrated circuits, automotive electronics, consumer electronics, and the internet of things. With the continuous enhancement of the technical research and development strength of domestic enterprises, the domestic semiconductor industry has a new opportunity for development. Although the semiconductor industry belongs to the high and new technology industry and is considered as the 'clean' industry, the processes of cleaning, photoetching, photoresist removing, drying and the like in the semiconductor production need to use a large amount of acid, alkali, organic solvent and a plurality of special gases, and the 'three wastes' in the whole production process have large yield and a plurality of types.
Currently, research on exhaust gas treatment in semiconductor production mainly focuses on the development and design of exhaust gas treatment devices. For example, patent CN115518501A discloses a semiconductor waste gas treatment device, comprising a reaction vessel, wherein the reaction vessel comprises: the heater comprises a top cover, a shell and a heater, wherein the top cover is connected with a waste gas pipeline and an auxiliary gas pipeline; the shell is arranged below the top cover, and the shell and the top cover are matched to enclose a reaction cavity; the heater is arranged on the wall surface of the shell in a penetrating way and is positioned in the reaction cavity. According to the semiconductor waste gas treatment equipment provided by the scheme, the heater is inserted into the shell, the heater is more convenient to disassemble and assemble, the disassembling and assembling workload is reduced, the requirement of the disassembling and assembling on space is reduced, the weight of the top cover is reduced, and the maintenance cost is reduced.
With the intensive research of intelligent manufacturing, simulation technology needs to be adopted to realize the analysis of semiconductor manufacturing process, the design and performance optimization of semiconductor devices, and the research and development of products are accelerated. And there has been little research on simulation of exhaust gas during semiconductor manufacturing. The current state of the art of simulation related to the exhaust gas field can only simulate a single chemical reaction process. For example, patent CN106156515A discloses a method and a system for dynamic fault simulation of a dual-stage catalytic cracking reverse-regeneration system, which includes: establishing a knowledge database, and integrating a fault database; (2) Constructing a double-section type catalytic cracking anti-regeneration system dynamic model based on DCS data and process model data of an industrial double-section type catalytic cracking device, and establishing a double-section type catalytic cracking anti-regeneration system dynamic model library; (3) Obtaining basic input data under different working conditions according to a knowledge database, and obtaining a dynamic simulation steady-state working point; (4) Selecting a specific fault type from a fault database, converting the specific fault type into an input deviation of a dynamic model, and performing dynamic simulation on the fault; (5) And verifying the fault type by using a fault intelligent analysis module, and inputting the simulation result into a fault database to perfect the database. A two-stage catalytic cracking anti-regeneration system fault dynamic simulation system comprises: the system comprises a DCS data acquisition module, a double-section type catalytic cracking reverse regeneration system dynamic model base, a knowledge database, a fault database and a fault intelligent analysis module.
However, the waste gas treatment of semiconductor manufacturing equipment is a hybrid industry in terms of product type and production process organization. The current simulation means can not realize the full-flow simulation of the waste gas generation, treatment and discharge process in the semiconductor manufacturing equipment.
Therefore, how to construct an exhaust gas treatment simulation model for a semiconductor manufacturing apparatus to realize a full-flow simulation of the exhaust gas generation, treatment and discharge processes of the semiconductor manufacturing apparatus is a problem to be solved by those skilled in the art.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method and a device for constructing an exhaust gas treatment simulation model for semiconductor manufacturing equipment, wherein a semiconductor manufacturing equipment group is determined, a database of the semiconductor manufacturing equipment group is established, a discrete manufacturing module is established, and the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process; establishing a chemical steady-state module linked with the discrete manufacturing module; and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time based on the discrete manufacturing module and the chemical steady-state module. In consideration of the states of waste gas generation, treatment and emission stages in various processes in the semiconductor manufacturing process, the method not only can quickly assist in calculating the engineering consumption, the pipeline layout, the waste gas treatment effect and the like at the initial design stage, but also can provide more accurate reference values for capacity optimization, auxiliary equipment type selection, energy conservation and emission reduction and the like.
In a first aspect, the present invention provides an exhaust gas treatment simulation model building method for a semiconductor manufacturing apparatus, comprising the steps of:
determining a semiconductor manufacturing equipment group, and establishing a database of the semiconductor manufacturing equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to the semiconductor target manufacturing process and comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process;
establishing a chemical steady-state module linked with the discrete manufacturing module, wherein the chemical steady-state module simulates the chemical reaction of waste gas in the semiconductor target manufacturing process;
and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time based on the discrete manufacturing module and the chemical steady-state module.
Further, the semiconductor target manufacturing process is a certain semiconductor manufacturing process that determines the group of semiconductor manufacturing equipment;
the semiconductor manufacturing equipment group comprises semiconductor manufacturing process equipment and waste gas treatment equipment;
the database comprises semiconductor manufacturing process parameter data, waste gas generation working condition parameter data, waste gas treatment working condition parameter data and waste gas emission parameter data;
the semiconductor manufacturing process parameters comprise raw material components and process flows of semiconductor manufacturing, the waste gas generation working condition parameters comprise state parameters of each cavity in semiconductor manufacturing process equipment, the waste gas treatment working condition parameters comprise waste gas treatment reaction type parameters and waste gas treatment reaction working condition parameters in waste gas treatment equipment, and the waste gas emission parameters comprise physical parameters of discharged waste gas.
Further, the discrete manufacturing module is built, and the method specifically comprises the following steps:
acquiring all corresponding semiconductor manufacturing processes based on the determined semiconductor manufacturing process equipment;
constructing a logic unit and a strategy unit corresponding to each semiconductor manufacturing process;
building a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and converts semiconductor manufacturing process parameter data into waste gas generation working condition parameter data and first waste gas emission parameter data.
Further, the method for constructing the logic unit and the strategy unit corresponding to each semiconductor manufacturing process specifically comprises the following steps:
traversing each cavity in the semiconductor manufacturing process equipment and giving state parameter data of all the cavities;
determining raw material composition data and process flow data for performing semiconductor manufacturing on a per semiconductor manufacturing process basis;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the semiconductor manufacturing process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and the state parameter data of each cavity in the semiconductor manufacturing process equipment;
and a strategy unit for constructing the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data by giving the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data through the state parameter data and the logic unit of each cavity in the semiconductor manufacturing process equipment.
Further, the first exhaust emission parameter includes a type of exhaust gas emitted.
Further, a chemical industry steady-state module linked with the discrete manufacturing module is established, and the method specifically comprises the following steps:
constructing a first submodule simulating the generation of waste gas in the semiconductor manufacturing process based on semiconductor manufacturing process equipment;
establishing linkage between a first sub-module and a discrete manufacturing module, and transmitting waste gas generation working condition parameter data to the first sub-module by the discrete manufacturing module;
disassembling the waste gas treatment equipment into a plurality of minimum structure units, respectively forming corresponding minimum structure simulation units for waste gas treatment thermodynamic simulation, and endowing a waste gas treatment working condition parameter of each minimum structure unit to the minimum structure simulation unit, wherein the minimum structure unit is a single part for completing an independent process step in waste gas treatment in the waste gas treatment equipment;
constructing a second submodule for simulating waste gas treatment and emission, wherein the second submodule is used for calling and integrating a plurality of minimum structure simulation units based on waste gas treatment reaction type parameters;
and combining a first submodule and a second submodule, wherein the first submodule transmits the working condition parameter data of the waste gas generation and the semiconductor manufacturing process parameter data into the second submodule to simulate the waste gas treatment and discharge, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
Further, establishing linkage between the first sub-module and the discrete manufacturing module specifically comprises the following steps:
the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and determines waste gas generation working condition parameter data based on semiconductor manufacturing process parameter data;
and constructing a linkage instruction module for linking the first submodule and the discrete manufacturing module, wherein the linkage instruction module calls the parameter data of the semiconductor manufacturing process and the determined working condition parameter data of the waste gas generation into the first submodule by sending a calling instruction.
Furthermore, the second submodule retrieves and integrates a plurality of minimum structure simulation units based on the exhaust treatment reaction type parameters, and specifically comprises the following steps:
the second submodule gives a process flow of waste gas treatment based on the waste gas treatment reaction type parameters;
and calling and integrating corresponding minimum structure simulation units based on the process flow of waste gas treatment.
Furthermore, the simulation of the waste gas treatment and discharge by the second submodule comprises the simulation of waste gas treatment working condition parameters and second waste gas discharge parameters, wherein the second waste gas discharge parameters comprise the discharge amount, the discharge rate, the temperature and the pressure of waste gas.
In a second aspect, the present invention also provides an exhaust gas treatment simulation model building apparatus for a semiconductor manufacturing facility, which employs the exhaust gas treatment simulation model building method for a semiconductor manufacturing facility as described above, and includes:
the acquisition assembly is used for determining a semiconductor manufacturing equipment group and acquiring and responding to a semiconductor target manufacturing process;
the method comprises the steps of constructing a component, establishing a database of a semiconductor manufacturing equipment group, establishing a discrete manufacturing module, establishing a chemical steady-state module linked with the discrete manufacturing module, simulating a waste gas chemical reaction in a semiconductor target manufacturing process by the chemical steady-state module, and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time.
The method and the device for constructing the exhaust gas treatment simulation model for the semiconductor manufacturing equipment, provided by the invention, at least have the following beneficial effects:
(1) The states of various stages of waste gas generation, treatment and emission in various processes in the semiconductor manufacturing process are considered, simulation is carried out, engineering consumption, pipeline layout, waste gas treatment effect and the like can be rapidly calculated in an auxiliary mode at the initial design stage, and accurate references can be provided for capacity optimization, auxiliary equipment type selection, energy conservation and emission reduction and the like.
(2) Through determining a logic unit and a strategy unit corresponding to the semiconductor manufacturing process, a discrete manufacturing module for simulating the waste gas generation working condition and the waste gas emission related to the first waste gas emission parameter is built, and the simulation of the waste gas generation source end are accurately realized.
(3) When the waste gas treatment and discharge processes are simulated, the waste gas treatment equipment is disassembled to form a minimum structural unit, so that the subsequent unit modeling is facilitated, the combination is carried out according to different waste gas treatment reaction mechanisms, and all waste gas treatment working conditions can be simulated to the maximum extent.
(4) The linkage instruction module can realize linkage of the discrete manufacturing module and the chemical industry steady-state module, functions of the two modules are played based on calling of waste gas generation working condition parameter data, construction of a waste gas treatment simulation model is completed, and simulation display of the whole process of waste gas generation, treatment and emission is realized.
Drawings
FIG. 1 is a schematic flow chart of an exhaust gas treatment simulation model construction method for a semiconductor manufacturing apparatus according to the present invention;
FIG. 2 is a schematic flow chart of building discrete manufacturing modules according to an embodiment of the present invention;
FIG. 3 is a schematic flow diagram of a discrete manufacturing module for building a simulated wafer etching process according to the present invention;
FIG. 4 is a schematic flow chart of establishing a chemical steady-state module according to an embodiment of the present invention;
FIG. 5 is a schematic flow chart of a chemical steady-state module for establishing a wafer etching process and plasma washing according to the present invention;
FIG. 6 is a disassembled view of the minimum structural unit of the plasma water washing device provided by the present invention;
FIG. 7 is a schematic diagram of an internal architecture of an exhaust treatment simulation model for a semiconductor manufacturing facility according to the present invention;
FIG. 8 is a schematic structural diagram of an exhaust treatment simulation model building apparatus for a semiconductor manufacturing facility according to the present invention.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, and "a plurality" typically includes at least two.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrases "comprising one of \8230;" does not exclude the presence of additional like elements in an article or device comprising the element.
From the viewpoint of product type and organization of production process, the manufacturing industry is generally divided into two categories, namely flow production and discrete manufacturing. In the production process of the semiconductor manufacturing equipment, the waste gas generation source end (namely the semiconductor manufacturing process equipment performs the semiconductor manufacturing stage) belongs to discrete manufacturing according to the difference of the front-end production process, and continuous flow production is performed inside each equipment of the waste gas treatment equipment (namely each process stage of waste gas treatment).
The production process of discrete manufacturing can be interrupted, mainly the change and assembly of the physical shape of the raw material, and basically no substance change occurs in the production process, and the raw material is usually solid. The production process of the flow production can not be interrupted, the production is carried out continuously or in batches, the raw materials are subjected to physical or chemical methods such as mixing, separation, crushing, heating and the like, and the raw materials can be in a gas state or a solid state.
For the exhaust gas treatment simulation of the semiconductor manufacturing equipment, not only the production type of discrete manufacturing needs to be considered, but also the process condition in the exhaust gas treatment process needs to be reflected at the same time.
Therefore, in order to realize simulation models of two different production types, namely an exhaust gas generation source end and an exhaust gas treatment, as shown in fig. 1, the invention provides an exhaust gas treatment simulation model construction method for a semiconductor manufacturing device, which comprises the following steps:
determining a semiconductor manufacturing equipment group, and establishing a database of the semiconductor manufacturing equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to the semiconductor target manufacturing process and comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process;
establishing a chemical steady-state module linked with the discrete manufacturing module, wherein the chemical steady-state module simulates the chemical reaction of waste gas in the semiconductor target manufacturing process;
and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time based on the discrete manufacturing module and the chemical steady-state module.
The semiconductor target manufacturing process is a certain semiconductor manufacturing process for determining the semiconductor manufacturing equipment group;
the semiconductor manufacturing equipment group comprises semiconductor manufacturing process equipment and waste gas treatment equipment;
the database comprises semiconductor manufacturing process parameter data, waste gas generation working condition parameter data, waste gas treatment working condition parameter data and waste gas emission parameter data;
the semiconductor manufacturing process parameters comprise raw material components and process flows of semiconductor manufacturing, the waste gas generation working condition parameters comprise state parameters of each cavity in semiconductor manufacturing process equipment, the waste gas treatment working condition parameters comprise waste gas treatment reaction type parameters and waste gas treatment reaction working condition parameters in waste gas treatment equipment, and the waste gas emission parameters comprise physical parameters of discharged waste gas.
Basic programs/software for building discrete manufacturing modules and chemical steady-state modules can be directly adopted, such as Plant Simulation, autoMod, flexsim, witness, anyLogic, PRO/ii, aspen Hysys, aspen Plus, gpromes, chemCAD and the like in the prior art, and single discrete manufacturing and chemical steady-state Simulation can be realized, which is not specifically limited herein.
According to the technical scheme, the states of all stages of generation, treatment and discharge of process waste gas in the semiconductor manufacturing process are considered, simulation is carried out, the constructed waste gas treatment simulation model can realize linkage of a discrete manufacturing module and a chemical steady-state module, functions of the two modules are played based on calling of waste gas generation working condition parameter data, and simulation display of the whole process of generation, treatment and discharge of the waste gas is realized.
In this embodiment, the determined semiconductor manufacturing equipment group is an etching equipment group of a wafer. The equipment set itself can perform a plurality of etching processes on the wafer, the following example sets the semiconductor target manufacturing process of collecting response as a dry etching process in wafer etching, and the waste gas treatment for waste gas generated by the dry etching process is plasma water washing.
Wherein, the semiconductor manufacturing process equipment is etching equipment, and the waste gas treatment equipment is plasma washing equipment. The semiconductor manufacturing process parameters comprise raw material components for semiconductor manufacturing, namely, gas media including O in dry etching process 2 Ar and N 2 And the like, and also comprises a process flow of semiconductor manufacturing, namely a process flow of a dry etching process.
The waste gas generation working condition parameters comprise state parameters of each cavity in the semiconductor manufacturing process equipment, the state parameters of each cavity are working condition states, wherein the etching equipment in the embodiment has 4 cavities, each cavity is in different working condition states, the reaction inside the cavity is different under different working condition states, and the waste gas generation working condition parameters comprise all working condition states related to each cavity in the 4 cavities.
The waste gas treatment condition parameters include waste gas treatment reaction type parameters and waste gas treatment reaction condition parameters in the waste gas treatment equipment, the waste gas treatment reaction type parameters in the embodiment are chemical reactions in plasma washing, and the waste gas treatment reaction condition parameters are condition parameters of the chemical reactions in the plasma washing, such as temperature, time, reactant amount and the like.
The exhaust emission parameters include physical parameters of the exhaust gas, i.e., the kind, the amount, the rate, the temperature, the pressure, etc. of the exhaust gas.
Taking a dry etching process in wafer etching as an example, the method for constructing the exhaust gas treatment simulation comprises the following steps:
determining a wafer etching equipment group, and establishing a database of the wafer etching equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to a dry etching process, and comprises a logic unit and a strategy unit corresponding to the wafer dry etching process;
establishing a chemical steady-state module linked with the discrete manufacturing module, wherein the chemical steady-state module simulates the chemical reaction of waste gas in the dry etching process;
based on the discrete manufacturing module and the chemical steady-state module which are established, a waste gas treatment simulation model which displays the waste gas generation, treatment and discharge processes in real time is constructed and formed.
As shown in fig. 2, the discrete manufacturing module is built, specifically including the following steps:
acquiring all corresponding semiconductor manufacturing processes based on the determined semiconductor manufacturing process equipment;
constructing a logic unit and a strategy unit corresponding to each semiconductor manufacturing process;
building a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and converts semiconductor manufacturing process parameter data into waste gas generation working condition parameter data and first waste gas emission parameter data.
The method comprises the following steps of constructing a logic unit and a strategy unit corresponding to each semiconductor manufacturing process:
traversing each cavity in the semiconductor manufacturing process equipment and giving state parameter data of all the cavities;
determining raw material component data and process flow data for performing semiconductor manufacturing on a per semiconductor manufacturing process basis;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the semiconductor manufacturing process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and the state parameter data of each cavity in the semiconductor manufacturing process equipment;
and a strategy unit for constructing the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data by giving the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data through the state parameter data and the logic unit of each cavity in the semiconductor manufacturing process equipment.
Through the construction of the logic unit and the strategy unit, the discrete manufacturing module has the capability of simulating the waste gas generation process, and the waste gas generation working condition parameters and the first waste gas emission parameters are converted into output through the acquisition and identification of the semiconductor target manufacturing process.
Taking a wafer dry etching process as an example, as shown in fig. 3, a discrete manufacturing module is built, and the discrete manufacturing module converts both the gas medium data of the wafer dry etching and the flow data of the etching process into working condition state data of each cavity of the etching equipment, chemical reaction data in plasma washing, condition parameter data of chemical reaction in the plasma washing and physical property parameter data of discharged waste gas; wherein, the physical parameter data of the discharged waste gas mainly refers to the type data of the discharged waste gas;
the method specifically comprises the following steps:
acquiring all corresponding etching processes based on the determined etching equipment;
constructing a logic unit and a strategy unit corresponding to each etching process;
building a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to the dry etching process, and converts the etching process parameter data into waste gas generation working condition parameter data and first waste gas emission parameter data.
The method comprises the following steps of constructing a logic unit and a strategy unit corresponding to each etching process, and specifically comprises the following steps:
traversing each cavity in the semiconductor manufacturing process equipment and giving state parameter data of all the cavities;
determining raw material component data and process flow data for etching based on each etching process;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the etching process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and the state parameter data of each cavity in the etching equipment;
and providing a corresponding relation between the etching process parameter data and the first waste gas emission parameter data through the state parameter data and the logic unit of each cavity in the etching equipment, and constructing a strategy unit of the corresponding relation between the etching process parameter data and the first waste gas emission parameter data.
As shown in fig. 4, the establishment of the chemical steady-state module linked with the discrete manufacturing module specifically includes the following steps:
constructing a first submodule simulating the generation of waste gas in the semiconductor manufacturing process based on semiconductor manufacturing process equipment;
establishing linkage between a first sub-module and a discrete manufacturing module, and transmitting waste gas generation working condition parameter data to the first sub-module by the discrete manufacturing module;
disassembling the waste gas treatment equipment into a plurality of minimum structure units, respectively forming corresponding minimum structure simulation units for waste gas treatment thermodynamic simulation, and endowing a waste gas treatment working condition parameter of each minimum structure unit to the minimum structure simulation unit, wherein the minimum structure unit is a single part which completes an independent process step in waste gas treatment in the waste gas treatment equipment;
constructing a second submodule for simulating waste gas treatment and emission, wherein the second submodule is used for calling and integrating a plurality of minimum structure simulation units based on waste gas treatment reaction type parameters;
and combining a first submodule and a second submodule, wherein the first submodule transmits the working condition parameter data generated by the waste gas and the semiconductor manufacturing process parameter data into the second submodule to simulate the treatment and discharge of the waste gas, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
Establishing linkage between the first sub-module and the discrete manufacturing module, specifically comprising the steps of:
the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and determines waste gas generation working condition parameter data based on semiconductor manufacturing process parameter data;
constructing a linkage instruction module which links the first submodule and the discrete manufacturing module, wherein the linkage instruction module calls the parameter data of the semiconductor manufacturing process and the determined working condition parameter data of the waste gas generation into the first submodule by sending a calling instruction;
the first submodule receives the working condition parameter data generated by the waste gas and the semiconductor manufacturing process parameter data, and transmits the working condition parameter data and the semiconductor manufacturing process parameter data into the second submodule to simulate the waste gas treatment and discharge.
The second submodule retrieves and integrates a plurality of minimum structure simulation units based on the exhaust-gas treatment reaction type parameters, and specifically comprises the following steps:
the second submodule gives a process flow of waste gas treatment based on the waste gas treatment reaction type parameters;
and calling and integrating corresponding minimum structure simulation units based on the process flow of waste gas treatment.
The simulation of the waste gas treatment and the emission by the second submodule comprises the simulation of waste gas treatment working condition parameters and second waste gas emission parameters, wherein the second waste gas emission parameters comprise the emission quantity, the emission rate, the temperature and the pressure of waste gas.
A single waste gas treatment device can compound a plurality of physicochemical reactions, and the working condition parameters of the minimum structural unit under each physicochemical reaction are different. Therefore, when chemical steady-state simulation is carried out, each physicochemical reaction is expressed in a combined mode by retrieving and integrating the minimum structure simulation unit for waste gas treatment thermodynamic simulation.
Taking wafer dry etching and plasma washing as an example, as shown in fig. 5, a chemical steady-state module of a wafer etching process and plasma washing is established, which specifically includes the following steps:
constructing a first sub-module for simulating the generation of waste gas in etching on the basis of etching equipment;
establishing linkage between a first sub-module and a discrete manufacturing module, and transmitting waste gas generation working condition parameter data to the first sub-module by the discrete manufacturing module;
the plasma washing equipment is disassembled into a plurality of minimum structure units, corresponding minimum structure simulation units for waste gas treatment thermodynamic simulation are respectively formed, and waste gas treatment working condition parameters of each minimum structure unit are given to the minimum structure simulation units, wherein the minimum structure unit is a single part which is used for completing independent process steps in waste gas treatment in the plasma washing equipment;
constructing a second submodule for simulating waste gas treatment and discharge, and calling and integrating a plurality of minimum structure simulation units by the second submodule based on the plasma washing reaction type parameters;
as shown in fig. 6, the minimum structure unit in this embodiment is a single component that completes an independent process step in waste gas treatment in the plasma washing device, and the single component is generally a component of the plasma washing device, such as a plasma torch, a water curtain reaction chamber, a primary washing, a secondary washing, a waste water pump, a circulating pump, a water wall, and the like, and the minimum structure simulation unit of the above unit components is disassembled, taken, and integrated;
and combining a first submodule and a second submodule, wherein the first submodule transmits the working condition parameter data and the etching process parameter data generated by the waste gas into the second submodule to simulate the treatment and discharge of the waste gas, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
Establishing linkage between the first sub-module and the discrete manufacturing module, specifically comprising the steps of:
the discrete manufacturing module collects and responds to a dry etching process, and determines waste gas generation working condition parameter data based on etching process parameter data;
and constructing a linkage instruction module for linking the first submodule and the discrete manufacturing module, wherein the linkage instruction module calls the etching process parameter data and the determined waste gas generation working condition parameter data into the first submodule by sending a calling instruction.
The second submodule calls and integrates a plurality of minimum structure simulation units based on the plasma reaction type parameters, and specifically comprises the following steps:
the second submodule gives a process flow of waste gas treatment based on the plasma reaction type parameter;
and calling and integrating corresponding minimum structure simulation units based on the process flow of waste gas treatment.
The simulation of the waste gas treatment and the emission by the second submodule comprises the simulation of waste gas treatment working condition parameters and second waste gas emission parameters, wherein the second waste gas emission parameters comprise the emission quantity, the emission rate, the temperature and the pressure of waste gas.
The second sub-module in the waste gas treatment simulation model for simulating wafer dry etching and plasma washing comprises conditions and parameters for simulating chemical reaction in plasma washing, and discharge amount, discharge rate, temperature, pressure and the like of discharged waste gas.
The method comprises the steps of building a chemical steady-state module for simulating wafer dry etching and plasma washing, building a waste gas treatment simulation model comprising a discrete manufacturing module and the chemical steady-state module, embedding a linkage instruction module into the waste gas reaction simulation model, completing construction of the waste gas treatment simulation model aiming at wafer etching, and displaying the processes of waste gas generation, treatment and emission in real time.
The discrete manufacturing module displays the first waste gas emission parameter data in real time, and in addition, the linkage instruction module calls the working condition state data of each cavity in the etching equipment to enter the chemical industry steady-state module to display the second waste gas emission parameter data in real time.
As shown in fig. 7, the real-time display of the generation, treatment and discharge of the exhaust gas is realized by the data transmission and simulation of the discrete manufacturing module, the chemical steady-state module and the linkage instruction module in the exhaust gas treatment simulation model. The semiconductor raw material components give original parameters 1-4, the cavities also give cavities 1-4, and the state parameters of each cavity are marked as states 1-1, \ 8230 \ 8230;, 4-2, and the like. After the treatment of the discrete manufacturing module, the working condition states of the cavity can be identified by codes of A, B and C \8230; \8230, and the like, and the combination of the working condition states is represented by code combinations, such as ABCD, ACDE \8230;, and the like. Under the action of the linkage instruction module, the discrete manufacturing module and the chemical steady-state module jointly realize real-time display of waste gas generation, treatment and emission.
As shown in fig. 8, the present invention also provides an exhaust gas treatment simulation model building apparatus for a semiconductor manufacturing facility, which adopts the exhaust gas treatment simulation model building method for a semiconductor manufacturing facility, and comprises:
the acquisition component is used for determining a semiconductor manufacturing equipment group, and acquiring and responding to a semiconductor target manufacturing process;
the method comprises the steps of constructing a component, establishing a database of a semiconductor manufacturing equipment group, establishing a discrete manufacturing module, establishing a chemical steady-state module linked with the discrete manufacturing module, simulating a waste gas chemical reaction in a semiconductor target manufacturing process by the chemical steady-state module, and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention. It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. An exhaust gas treatment simulation model building method for a semiconductor manufacturing apparatus, comprising the steps of:
determining a semiconductor manufacturing equipment group, and establishing a database of the semiconductor manufacturing equipment group;
building a discrete manufacturing module, wherein the discrete manufacturing module collects and responds to the semiconductor target manufacturing process and comprises a logic unit and a strategy unit corresponding to the semiconductor target manufacturing process;
establishing a chemical steady-state module linked with the discrete manufacturing module, wherein the chemical steady-state module simulates the chemical reaction of waste gas in the semiconductor target manufacturing process;
and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time based on the discrete manufacturing module and the chemical steady-state module.
2. The exhaust gas treatment simulation model building method for a semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor target manufacturing process is a certain semiconductor manufacturing process for specifying the semiconductor manufacturing apparatus group;
the semiconductor manufacturing equipment group comprises semiconductor manufacturing process equipment and waste gas treatment equipment;
the database comprises semiconductor manufacturing process parameter data, waste gas generation working condition parameter data, waste gas treatment working condition parameter data and waste gas emission parameter data;
the semiconductor manufacturing process parameters comprise raw material components and process flows of semiconductor manufacturing, the waste gas generation working condition parameters comprise state parameters of each cavity in semiconductor manufacturing process equipment, the waste gas treatment working condition parameters comprise waste gas treatment reaction type parameters and waste gas treatment reaction working condition parameters in waste gas treatment equipment, and the waste gas emission parameters comprise physical parameters of discharged waste gas.
3. The method of claim 2, wherein the building of the discrete manufacturing module comprises the steps of:
acquiring all corresponding semiconductor manufacturing processes based on the determined semiconductor manufacturing process equipment;
constructing logic units and strategy units corresponding to the semiconductor manufacturing processes;
building a discrete manufacturing module based on the logic unit and the strategy unit;
the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and converts semiconductor manufacturing process parameter data into waste gas generation working condition parameter data and first waste gas emission parameter data.
4. The method of claim 3, wherein the step of constructing the logic unit and the strategy unit corresponding to each semiconductor manufacturing process comprises the steps of:
traversing each cavity in the semiconductor manufacturing process equipment and giving state parameter data of all the cavities;
determining raw material composition data and process flow data for performing semiconductor manufacturing on a per semiconductor manufacturing process basis;
setting the corresponding relation between the process flow data and the state parameter data of all the cavities, giving the state parameter combination logic of each cavity, and constructing a logic unit of the corresponding relation between the semiconductor manufacturing process and the state parameter data of each cavity based on the combination logic;
constructing a corresponding relation between the first exhaust emission parameter data and the state parameter data of each cavity in the semiconductor manufacturing process equipment;
and a strategy unit for constructing the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data by giving the corresponding relation between the semiconductor manufacturing process parameter data and the first exhaust emission parameter data through the state parameter data and the logic unit of each cavity in the semiconductor manufacturing process equipment.
5. The exhaust gas treatment simulation model building method for a semiconductor manufacturing apparatus according to claim 4, wherein the first exhaust gas emission parameter includes a type of exhaust gas to be emitted.
6. The method for constructing the simulation model for the exhaust gas treatment of the semiconductor manufacturing equipment according to claim 2, wherein the establishment of the chemical steady-state module linked with the discrete manufacturing module specifically comprises the steps of:
constructing a first submodule simulating the generation of waste gas in the semiconductor manufacturing process based on semiconductor manufacturing process equipment;
establishing linkage between a first sub-module and a discrete manufacturing module, and transmitting waste gas generation working condition parameter data to the first sub-module by the discrete manufacturing module;
disassembling the waste gas treatment equipment into a plurality of minimum structure units, respectively forming corresponding minimum structure simulation units for waste gas treatment thermodynamic simulation, and endowing a waste gas treatment working condition parameter of each minimum structure unit to the minimum structure simulation unit, wherein the minimum structure unit is a single part for completing an independent process step in waste gas treatment in the waste gas treatment equipment;
constructing a second submodule for simulating waste gas treatment and emission, wherein the second submodule is used for calling and integrating a plurality of minimum structure simulation units based on waste gas treatment reaction type parameters;
and combining a first submodule and a second submodule, wherein the first submodule transmits the working condition parameter data of the waste gas generation and the semiconductor manufacturing process parameter data into the second submodule to simulate the waste gas treatment and discharge, and a chemical steady-state module for simulating the chemical reaction of the waste gas is established.
7. The method of claim 6, wherein establishing the linkage between the first sub-module and the discrete manufacturing module comprises:
the discrete manufacturing module collects and responds to a semiconductor target manufacturing process and determines waste gas generation working condition parameter data based on semiconductor manufacturing process parameter data;
and constructing a linkage instruction module for linking the first submodule and the discrete manufacturing module, wherein the linkage instruction module calls the parameter data of the semiconductor manufacturing process and the determined working condition parameter data of the waste gas generation into the first submodule by sending a calling instruction.
8. The method of claim 6, wherein the second sub-module retrieves and integrates a plurality of minimum configuration simulation units based on the exhaust treatment reaction type parameter, and comprises the steps of:
the second submodule gives a technological process of waste gas treatment based on the waste gas treatment reaction type parameters;
and calling and integrating corresponding minimum structure simulation units based on the process flow of waste gas treatment.
9. The method of claim 7, wherein the simulation of the exhaust treatment and the exhaust emission by the second sub-module includes simulating an exhaust treatment condition parameter and a second exhaust emission parameter, wherein the second exhaust emission parameter is an exhaust emission amount, an exhaust rate, a temperature, and a pressure of the exhaust.
10. An exhaust gas treatment simulation model building apparatus for a semiconductor manufacturing apparatus, characterized in that the exhaust gas treatment simulation model building method for a semiconductor manufacturing apparatus according to any one of claims 1 to 9 is adopted, comprising:
the acquisition component is used for determining a semiconductor manufacturing equipment group, and acquiring and responding to a semiconductor target manufacturing process;
the method comprises the steps of constructing a component, establishing a database of a semiconductor manufacturing equipment group, establishing a discrete manufacturing module, establishing a chemical steady-state module linked with the discrete manufacturing module, simulating a waste gas chemical reaction in a semiconductor target manufacturing process by the chemical steady-state module, and constructing and forming a waste gas treatment simulation model for displaying the waste gas generation, treatment and discharge processes in real time.
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