CN115855971A - Semiconductor defect detection system - Google Patents
Semiconductor defect detection system Download PDFInfo
- Publication number
- CN115855971A CN115855971A CN202310174019.7A CN202310174019A CN115855971A CN 115855971 A CN115855971 A CN 115855971A CN 202310174019 A CN202310174019 A CN 202310174019A CN 115855971 A CN115855971 A CN 115855971A
- Authority
- CN
- China
- Prior art keywords
- dichroic mirror
- pinhole
- semiconductor defect
- fluorescence
- imaging detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 230000007547 defect Effects 0.000 title claims abstract description 51
- 238000001514 detection method Methods 0.000 title claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims abstract description 59
- 238000003384 imaging method Methods 0.000 claims abstract description 38
- 230000002093 peripheral effect Effects 0.000 claims abstract description 4
- 238000007689 inspection Methods 0.000 claims description 8
- 238000005424 photoluminescence Methods 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 230000005281 excited state Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004624 confocal microscopy Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Abstract
The invention belongs to the technical field of semiconductor defect detection, and relates to a semiconductor defect detection system. The semiconductor defect detection system comprises a first light source, a first pinhole, a dichroic mirror, a sleeve lens, a second pinhole and an imaging detector, wherein the first light source and the imaging detector are respectively arranged on the periphery of the dichroic mirror; light emitted by the first light source irradiates to the dichroic mirror through the first pinhole, is reflected by the dichroic mirror and vertically irradiates to a product to be detected on the peripheral side of the dichroic mirror so as to form fluorescence; the fluorescence irradiates to an imaging detector through the dichroic mirror, the sleeve lens and the second pinhole in sequence, and the imaging detector is used for receiving the fluorescence. The semiconductor defect detection system combines the traditional photoluminescence technology and the confocal microscopic imaging technology, and can improve the optical resolution of semiconductor defect detection.
Description
Technical Field
The invention belongs to the technical field of semiconductor defect detection, and particularly relates to a semiconductor defect detection system.
Background
Photoluminescence (PL) refers to a phenomenon that an object is irradiated by an external light source to obtain energy and generate excitation to emit light, and the phenomenon generally passes through three main stages of absorption, energy transfer and light emission, wherein the absorption and emission of light occur in transitions between energy levels and pass through an excited state. Energy transfer is due to the motion of the excited state. Ultraviolet radiation, visible light, and infrared radiation can cause photoluminescence. Photoluminescence is a kind of cold luminescence, and refers to a process in which a substance absorbs photons (or electromagnetic waves) and then re-radiates the photons (or electromagnetic waves). From quantum mechanics theory, this process can be described as a process in which a substance absorbs photons, and after the photons transition to an excited state of a higher energy level, returns to a low energy state, while emitting photons.
In the prior art, a photoluminescence technology is often applied to defect detection of a semiconductor, however, interference of a non-focal plane diffraction signal easily causes a problem of optical resolution reduction in a defect detection process, and therefore, how to improve the optical resolution of a defect detection system in a process of detecting a semiconductor defect by the photoluminescence technology becomes an urgent problem to be solved.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the semiconductor defect detection system is provided for solving the technical problem that the optical resolution is reduced due to the interference of non-focal plane diffraction signals in the semiconductor defect detection process of the conventional photoluminescence technology.
In order to solve the above technical problem, an embodiment of the present invention provides a semiconductor defect detection system, including a first light source, a first pinhole, a dichroic mirror, a sleeve lens, a second pinhole, and an imaging detector, where the first light source and the imaging detector are respectively disposed on the periphery of the dichroic mirror, the first pinhole is disposed between the dichroic mirror and the first light source, the sleeve lens is disposed between the dichroic mirror and the imaging detector, and the second pinhole is disposed between the sleeve lens and the imaging detector;
the light emitted by the first light source is irradiated to the dichroic mirror through the first pinhole, reflected by the dichroic mirror and vertically irradiated to a product to be detected arranged on the peripheral side of the dichroic mirror so as to form fluorescence; the fluorescence sequentially passes through the dichroic mirror, the sleeve lens and the second pinhole and irradiates to the imaging detector, and the imaging detector is used for receiving the fluorescence.
According to the semiconductor defect detection system provided by the embodiment of the invention, the traditional photoluminescence technology and the confocal microscopic imaging technology are combined to improve the optical resolution of semiconductor defect detection. In the semiconductor defect detection system, light of a first light source vertically focuses and irradiates the surface of a product to be detected through a first pinhole and a dichroic mirror, generated fluorescence enters a sleeve lens through the dichroic mirror, a second pinhole is arranged at the position of a rear focal plane of the sleeve lens, the fluorescence passing through the second pinhole is received by an imaging detector, the focal plane of the first pinhole, the focal plane of the product to be detected and the second pinhole are arranged at conjugate positions which are mutually associated, and due to the introduction of the second pinhole, light energy detected by the product to be detected when deviating from the focal plane is weakened relative to light energy when an object is just positioned at the focal plane, so that the interference of diffracted light and scattered light is effectively avoided, therefore, the system has axial response capacity for reflecting different depths of a sample, the signal-to-noise ratio of a fluorescence signal received by the imaging detector is higher than that of a traditional photoluminescence system, and the resolution ratio is improved by 1.4 times compared with the traditional photoluminescence defect detection system.
Optionally, an optical axis of the sleeve lens is coaxially disposed with the first central optical axis of the dichroic mirror;
the central axis of the first pinhole is coaxial with the second central optical axis of the dichroic mirror;
the first central optical axis of the dichroic mirror and the second central optical axis of the dichroic mirror are arranged perpendicular to each other.
Optionally, the semiconductor defect detection system further includes a first focusing lens and a second focusing lens, and the light emitted by the first light source enters the first pin hole through the first focusing lens and the second focusing lens in sequence.
Optionally, the semiconductor defect detection system further comprises a microscope objective, the microscope objective is arranged between the dichroic mirror and the product to be detected, and the light reflected by the dichroic mirror reaches the surface of the product to be detected through the microscope objective to form fluorescence;
the fluorescence enters the dichroic mirror through the microscope objective.
Optionally, the semiconductor defect detection system further includes a spectroscope and a spectrometer, the spectroscope is disposed between the sleeve lens and the second pinhole, the spectroscope is configured to divide the fluorescence emitted from the sleeve lens into a first light splitting optical path and a second light splitting optical path, the fluorescence in the first light splitting optical path enters the imaging detector through the second pinhole, and the fluorescence in the second light splitting optical path enters the spectrometer;
and the middle shaft of the second pinhole is coaxially arranged with the first light splitting optical path.
Optionally, the semiconductor defect detection system further includes a focusing mirror, the focusing mirror is disposed between the beam splitter and the spectrometer, and an optical axis of the focusing mirror is coaxial with the second beam splitting optical path.
Optionally, the semiconductor defect detection system further includes an optical filter, and the optical filter is disposed between the sleeve lens and the beam splitter.
Optionally, the dichroic mirror is a long-wave pass dichroic mirror;
the optical filter is a long-wave pass optical filter.
Optionally, the imaging detector is a point detector.
Optionally, the product to be detected is a semiconductor wafer, and the first light source is a light source with a wavelength smaller than a peak wavelength of the semiconductor wafer by 100 nm.
Drawings
Fig. 1 is a schematic diagram of a semiconductor defect inspection system according to an embodiment of the invention.
The reference numerals in the specification are as follows:
1. a first light source; 2. a first pinhole; 3. a dichroic mirror; 4. a sleeve lens; 5. a second pinhole; 6. an imaging detector; 7. a first focusing lens; 8. a second focusing lens; 9. a microscope objective; 10. a beam splitter; 11. a spectrometer; 12. a focusing mirror; 13. an optical filter; 14. and (5) products to be detected.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the semiconductor defect detecting system provided in the embodiment of the present invention includes a first light source 1, a first pinhole 2, a dichroic mirror 3, a sleeve lens 4, a second pinhole 5, and an imaging detector 6, where the first light source 1, the imaging detector 6, and a product 14 to be detected are respectively disposed on the periphery of the dichroic mirror 3, the first pinhole 2 is disposed between the dichroic mirror 3 and the first light source 1, the sleeve lens 4 is disposed between the dichroic mirror 3 and the imaging detector 6, and the second pinhole 5 is disposed between the sleeve lens 4 and the imaging detector 6.
The light emitted by the first light source 1 is irradiated to the dichroic mirror 3 through the first pinhole 2, is reflected by the dichroic mirror 3 and is vertically irradiated onto the product to be detected 14 so as to form fluorescence; the fluorescence sequentially passes through the dichroic mirror 3, the sleeve lens 4 and the second pinhole 5 and irradiates to the imaging detector 6, and the imaging detector 6 is used for receiving the fluorescence.
The semiconductor defect detection system provided by the embodiment of the invention combines the traditional photoluminescence technology and the confocal microscopic imaging technology to improve the optical resolution of semiconductor defect detection. In the semiconductor defect detection system, light of a first light source 1 vertically focuses through a first pinhole 2 and a dichroic mirror 3 and irradiates the surface of a product 14 to be detected, generated fluorescent light enters a sleeve lens 4 through the dichroic mirror 3, a second pinhole 5 is arranged at the position of a rear focal plane of the sleeve lens 4, the fluorescent light passing through the second pinhole 5 is received by an imaging detector 6, the focal plane of the first pinhole 2, the product 14 to be detected and the second pinhole 5 are arranged at mutually associated conjugate positions, due to the introduction of the second pinhole 5, light energy detected by the product 14 to be detected when the product deviates from the focal plane is just weakened relative to an object when the object is located at the focal plane, and the interference of diffracted light and scattered light is effectively avoided, so that the system has axial response capability of reflecting different depths of a sample, the signal-to-noise ratio of the fluorescent signal received by the imaging detector 6 is higher than that of a traditional photoluminescence system, and the resolution is improved by 1.4 times than that of the traditional photoluminescence defect detection system.
Among them, confocal microscopy generally uses an illumination pinhole placed behind a light source and a detection pinhole placed in front of a detector to realize point illumination and point detection, light emitted from the light source through the illumination pinhole is focused on a certain point of a sample focal plane, fluorescence emitted from the point is imaged in the detection pinhole, and any emission light outside the point is blocked by the detection pinhole. The illumination pinhole and the detection pinhole are conjugate to the irradiated point or the detected point, so that the detected point is a confocal point, and the plane where the detected point is located is a confocal plane. The optical signal of the collecting point reaches the photomultiplier tube (PMT) through the detecting pinhole, then forms an image on the computer monitor screen through signal processing, and in order to generate a complete image, the scanning system in the optical path scans on the focal plane of the sample, thereby generating a complete confocal image. As long as the objective table moves up and down along the Z axis, a new layer of the sample is moved to the confocal plane, the new layer of the sample is imaged on the display, and continuous light-section images of different layers of the sample can be obtained along with the continuous movement of the Z axis. The light emitted from the focal point of the objective focal plane can be well converged at the pinhole, and can be completely received by the detector through the pinhole. Light emitted from the upper and lower positions of the focal plane can generate light spots with large diameters at the positions of the pinholes, and only a small part of light can penetrate through the pinholes and be received by the detector by comparing the diameters of the pinholes. And as the distance from the focal plane of the objective lens is larger, the stray light generated by the sample has larger diffuse spot at the pinhole, and the energy capable of penetrating the pinhole is smaller (from 10% to 1%, slowly approaching 0%), so that the signal generated on the detector is smaller, and the influence is smaller. Just because the confocal microscope only images a sample focal plane, the interference of diffracted light and scattered light is effectively avoided, so that the confocal microscope has higher resolution than a common microscope and is widely applied to biology. The optical resolution of confocal microscopy is calculated as: δ =0.439 λ/NA, where δ is the optical resolution, λ is the wavelength or radiation used, and NA is the objective numerical aperture.
Further, the conventional photoluminescence technology is limited by the optical diffraction limit, and the optical resolution is calculated by the formula: δ =0.61 λ/NA. The semiconductor defect detection system of the invention combines the traditional photoluminescence technology and the confocal microscopic imaging technology, so that the optical resolution is improved by 1.4 times compared with the traditional photoluminescence defect detection system.
In one embodiment, the first pinhole 2 is an illumination pinhole, and the second pinhole 5 is a confocal pinhole.
In one embodiment, as shown in fig. 1, the optical axis of the sleeve lens 4 is coaxially disposed with the first central optical axis of the dichroic mirror 3, the central axis of the first pinhole 2 is coaxially disposed with the second central optical axis of the dichroic mirror 3, and the first central optical axis of the dichroic mirror 3 and the second central optical axis of the dichroic mirror 3 are disposed perpendicular to each other.
The semiconductor defect detection system is formed by setting the position relationship between the two optical axes of the dichroic mirror 3 and the position relationship between each optical axis of the dichroic mirror 3, the optical axis of the sleeve lens 4 and the central axis of the first pinhole 2, and the optical resolution of semiconductor defect detection is improved better.
In one embodiment, as shown in fig. 1, the semiconductor defect inspection system further includes a first focusing lens 7 and a second focusing lens 8, and the light emitted from the first light source 1 enters the first pinhole 2 through the first focusing lens 7 and the second focusing lens 8 in sequence. By providing two focusing lenses, the light emitted from the first light source 1 enters the first pinhole 2 more and is irradiated to the dichroic mirror 3.
In one embodiment, as shown in fig. 1, the semiconductor defect detecting system further comprises a microscope objective 9, the microscope objective 9 is arranged between the dichroic mirror 3 and the product to be detected 14, and the light reflected by the dichroic mirror 3 reaches the surface of the product to be detected 14 through the microscope objective 9 to form fluorescence; the fluorescence light enters the dichroic mirror 3 through the microscope objective 9.
By arranging the microscope objective 9, the light reflected by the dichroic mirror 3 can be more intensively irradiated on the product 14 to be detected, and the fluorescence generated on the product 14 to be detected can be more clearly irradiated to the imaging detector 6 through the dichroic mirror 3, the sleeve lens 4 and the second pinhole 5.
In an embodiment, as shown in fig. 1, the semiconductor defect detecting system further includes a beam splitter 10 and a spectrometer 11, the beam splitter 10 is disposed between the sleeve lens 4 and the second pinhole 5, the beam splitter 10 is configured to split the fluorescence emitted from the sleeve lens 4 into a first split light path and a second split light path, the fluorescence in the first split light path enters the imaging detector 6 through the second pinhole 5, and the fluorescence in the second split light path enters the spectrometer 11 for performing a spectrum measurement.
And the central axis of the second pinhole 5 and the first light splitting optical path are coaxially arranged to form the semiconductor defect detection system.
In an embodiment, as shown in fig. 1, the semiconductor defect detecting system further includes a focusing mirror 12, the focusing mirror 12 is disposed between the spectroscope 10 and the spectrometer 11, and an optical axis of the focusing mirror 12 is coaxial with the second light splitting path. Fluorescence on the second light splitting optical path enters the light input end of the focusing mirror 12, and the light emergent end of the focusing mirror 12 is connected with the spectrometer 11 through an optical fiber.
In one embodiment, as shown in fig. 1, the semiconductor defect inspection system further includes a filter 13, the filter 13 is disposed between the sleeve lens 4 and the beam splitter 10, and the filter 13 is used for blocking the reflected light and the scattered light from the first light source 1 with short wavelengths and transmitting the fluorescence with long wavelengths.
In one embodiment, the dichroic mirror 3 is a long-wave pass dichroic mirror 3, and the optical filter 13 is a long-wave pass optical filter 13. The imaging detector 6 is a point detector.
Further, the product 14 to be detected is a semiconductor wafer, and the first light source 1 is a light source with a wavelength smaller than the peak wavelength of the semiconductor wafer by 100 nm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The semiconductor defect detection system is characterized by comprising a first light source, a first pinhole, a dichroic mirror, a sleeve lens, a second pinhole and an imaging detector, wherein the first light source and the imaging detector are respectively arranged on the peripheral side of the dichroic mirror, the first pinhole is arranged between the dichroic mirror and the first light source, the sleeve lens is arranged between the dichroic mirror and the imaging detector, and the second pinhole is arranged between the sleeve lens and the imaging detector;
the light emitted by the first light source is irradiated to the dichroic mirror through the first pinhole, reflected by the dichroic mirror and vertically irradiated to a product to be detected arranged on the peripheral side of the dichroic mirror so as to form fluorescence; the fluorescence sequentially passes through the dichroic mirror, the sleeve lens and the second pinhole and irradiates to the imaging detector, and the imaging detector is used for receiving the fluorescence.
2. The semiconductor defect detection system of claim 1, wherein an optical axis of the sleeve lens is disposed coaxially with a first central optical axis of the dichroic mirror;
the central axis of the first pinhole is coaxial with the second central optical axis of the dichroic mirror;
the first central optical axis of the dichroic mirror and the second central optical axis of the dichroic mirror are arranged perpendicular to each other.
3. The semiconductor defect inspection system of claim 1, further comprising a first focusing lens and a second focusing lens, wherein the light emitted from the first light source enters the first pinhole via the first focusing lens and the second focusing lens in sequence.
4. The semiconductor defect inspection system of claim 1, further comprising a microscope objective disposed between the dichroic mirror and the product to be inspected, the light reflected by the dichroic mirror passing through the microscope objective to the surface of the product to be inspected to form fluorescence;
the fluorescence enters the dichroic mirror through the microscope objective.
5. The semiconductor defect detecting system of claim 1, further comprising a beam splitter and a spectrometer, wherein the beam splitter is disposed between the sleeve lens and the second pinhole, the beam splitter is configured to split the fluorescence emitted from the sleeve lens into a first split optical path and a second split optical path, the fluorescence of the first split optical path enters the imaging detector through the second pinhole, and the fluorescence of the second split optical path enters the spectrometer;
and the middle shaft of the second pinhole is coaxially arranged with the first light splitting optical path.
6. The semiconductor defect detection system of claim 5, further comprising a focusing mirror disposed between the beam splitter and the spectrometer, wherein an optical axis of the focusing mirror is coaxial with the second beam splitter optical path.
7. The semiconductor defect inspection system of claim 5, further comprising an optical filter disposed between the sleeve lens and the beam splitter.
8. The semiconductor defect detection system of claim 7, wherein the dichroic mirror is a long-wave pass dichroic mirror;
the optical filter is a long-wave pass optical filter.
9. The semiconductor defect inspection system of claim 1, wherein the imaging detector is a point detector.
10. The semiconductor defect inspection system of claim 1, wherein the product to be inspected is a semiconductor wafer and the first light source is a light source having a wavelength less than 100nm of a peak wavelength of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310174019.7A CN115855971A (en) | 2023-02-28 | 2023-02-28 | Semiconductor defect detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310174019.7A CN115855971A (en) | 2023-02-28 | 2023-02-28 | Semiconductor defect detection system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115855971A true CN115855971A (en) | 2023-03-28 |
Family
ID=85659261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310174019.7A Pending CN115855971A (en) | 2023-02-28 | 2023-02-28 | Semiconductor defect detection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115855971A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116660285A (en) * | 2023-07-26 | 2023-08-29 | 浙江大学 | Wafer characteristic spectrum on-line measuring device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5760951A (en) * | 1992-09-01 | 1998-06-02 | Arthur Edward Dixon | Apparatus and method for scanning laser imaging of macroscopic samples |
| CN108956561A (en) * | 2018-06-07 | 2018-12-07 | 浙江大学 | Copolymerization coke and annular total internal reflection double mode microscopic system based on scanning galvanometer |
| CN114235836A (en) * | 2021-12-16 | 2022-03-25 | 深圳市壹倍科技有限公司 | System for detecting semiconductor defects |
| CN115524345A (en) * | 2022-11-25 | 2022-12-27 | 深圳市壹倍科技有限公司 | Defect detection optical system for semiconductor |
-
2023
- 2023-02-28 CN CN202310174019.7A patent/CN115855971A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5760951A (en) * | 1992-09-01 | 1998-06-02 | Arthur Edward Dixon | Apparatus and method for scanning laser imaging of macroscopic samples |
| CN108956561A (en) * | 2018-06-07 | 2018-12-07 | 浙江大学 | Copolymerization coke and annular total internal reflection double mode microscopic system based on scanning galvanometer |
| CN114235836A (en) * | 2021-12-16 | 2022-03-25 | 深圳市壹倍科技有限公司 | System for detecting semiconductor defects |
| CN115524345A (en) * | 2022-11-25 | 2022-12-27 | 深圳市壹倍科技有限公司 | Defect detection optical system for semiconductor |
Non-Patent Citations (1)
| Title |
|---|
| 顾月清 等: "现代生物医学研究技术实验教程", 中国医药科技出版社, pages: 229 - 94 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116660285A (en) * | 2023-07-26 | 2023-08-29 | 浙江大学 | Wafer characteristic spectrum on-line measuring device |
| CN116660285B (en) * | 2023-07-26 | 2023-11-17 | 浙江大学 | Wafer characteristic spectrum on-line measuring device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6888148B2 (en) | Arrangement for the optical capture of excited and /or back scattered light beam in a sample | |
| US6947127B2 (en) | Arrangement for the optical capture of excited and/or back scattered light beam in a sample | |
| JP5335744B2 (en) | Optical microscopy using optically convertible optical labels | |
| CN107192702B (en) | Spectroscopic pupil laser confocal CARS (coherent anti-Raman scattering) microspectroscopy testing method and device | |
| CN108957719A (en) | A kind of two-photon stimulated emission depletion compound microscope | |
| CN101019060A (en) | Method and system for wide-field multi-photon microscopy having a confocal excitation plane | |
| JP5265070B2 (en) | Light source device for illumination in scanning microscope inspection, and scanning microscope | |
| US7042556B1 (en) | Device and nondestructive method to determine subsurface micro-structure in dense materials | |
| US7355789B2 (en) | Phase filter | |
| WO2021129267A1 (en) | Tip-enhanced raman spectroscope microscopic imaging device | |
| JP2003028795A (en) | Test sample examining method and scanning electron microscope | |
| WO2021243755A1 (en) | Fluorescence difference super-resolution imaging method and imaging system | |
| US6674573B2 (en) | Laser microscope | |
| CN115855971A (en) | Semiconductor defect detection system | |
| JP2005037388A (en) | Arrangement and method for optical detection of light radiation excited and/or backscattered in specimen with double-objective arrangement | |
| CN102818795A (en) | Biological fluorescence microscopic detection instrument | |
| JP2005017282A (en) | Light-receiving unit and measuring apparatus including the same | |
| JP5592108B2 (en) | Interference confocal microscope and light source imaging method | |
| JP6659548B2 (en) | Multicolor scanning microscope | |
| JP2006275964A (en) | Shading correction method for scanning fluorescence microscope | |
| EP2524260A1 (en) | Ultra dark field microscope | |
| KR101603726B1 (en) | Multi-modal microscope | |
| US7545498B2 (en) | System and method for removing auto-fluorescence through the use of multiple detection channels | |
| JP5945506B2 (en) | Optical analysis apparatus and optical analysis method using wavelength characteristics of light of single luminescent particles | |
| JPH10142151A (en) | Optical microscope |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 518000, 1st Floor, Building B5, Taohuayuan Science and Technology Innovation Ecological Park, Tiegang Community, Xixiang Street, Bao'an District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Yibi Technology Co.,Ltd. Address before: Room 425, Block C, Bao'an New Generation Information Technology Industrial Park, No. 3, North Second Lane, Chuangye Second Road, 28 Dalang Community, Xin'an Street, Bao'an District, Shenzhen, Guangdong 518000 Applicant before: Shenzhen Yibi Technology Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20230328 |