CN115847947B - Multilayer composite indium-based thermal interface material and preparation method thereof - Google Patents

Multilayer composite indium-based thermal interface material and preparation method thereof Download PDF

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CN115847947B
CN115847947B CN202310074001.XA CN202310074001A CN115847947B CN 115847947 B CN115847947 B CN 115847947B CN 202310074001 A CN202310074001 A CN 202310074001A CN 115847947 B CN115847947 B CN 115847947B
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indium
layer
composite material
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based composite
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CN115847947A (en
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郭宏
张洁
谢忠南
孙明美
黄树晖
解浩峰
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GRIMN Engineering Technology Research Institute Co Ltd
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Abstract

The invention discloses a multilayer composite indium-based thermal interface material, which comprises the following components: the upper pure indium layer with the prefabricated configuration, the indium-based composite material layer composed of the indium matrix and the heat conducting particles and the lower pure indium layer with the prefabricated configuration are sequentially arranged from top to bottom. The invention also discloses a preparation method of the multilayer composite indium-based thermal interface material, which comprises the steps of firstly preparing an indium-based composite material through vacuum warm compaction, rolling the indium-based composite material to a required thickness, then laminating and rolling the rolled indium-based composite material with an upper pure indium layer and a lower pure indium layer, and finally molding or rolling the upper surface and the lower surface of the rolled three-layer composite material to form a configuration. The multilayer composite indium-based thermal interface material provided by the invention has good plasticity, and is more easy to deform to fully fill the tiny gaps between the heat generating element and the heat radiating element so as to reduce the contact thermal resistance; the heat conductivity is as high as 90-150W/m.K; the melting point is higher than 150 ℃, and the material is always solid when in use, so that the phenomenon of short circuit caused by melting overflow can be avoided; and the cost is obviously reduced compared with the pure indium thermal interface material.

Description

Multilayer composite indium-based thermal interface material and preparation method thereof
Technical Field
The invention belongs to the technical field of thermal interface materials, and particularly relates to a multilayer composite indium-based thermal interface material and a preparation method thereof.
Background
With the continuous increase of the computing power of electronic devices and the continuous development of multi-functionalization, integration and miniaturization, the thermal load of the electronic devices is higher and higher. In order to reduce the temperature of the heat generating element, a high-heat-conductivity heat radiating element is placed on the surface of the heat generating element to conduct heat, but the contact surface of the heat generating element and the heat radiating element cannot be completely attached to each other in a microcosmic way, so that the interface contact thermal resistance is large, and the heat conduction effect is poor. Therefore, a thermal interface material is needed to fill the interface gap, the contact area of the heat conducting element and the heat radiating element is increased, the interface contact thermal resistance is reduced, and the heat conducting efficiency is improved.
In the traditional thermal interface materials, most of the thermal interface materials are organic thermal interface materials, and are usually prepared by adding high-heat-conductivity fillers into silicon oil, polymers, resins and other matrixes, but the heat conductivity upper limit of the matrixes is limited due to poor heat conductivity of the matrixes. Thermally conductive graphite sheets are also common thermal interface materials, but their thermal conductivity (26W/mK) is also relatively low. The solder in the metal thermal interface material has high modulus and is easy to cause cracking failure; the liquid metal is pumped out, and is easy to overflow to cause short circuit; indium sheets have been widely used as thermal interface materials in the semiconductor chip field because of their excellent thermal conductivity and ductility.
In the prior art, patent CN109957696A, CN101022712A, CN109957695A, CN109957694A and the like adopt a method of alloying indium with metals such as tin, bismuth, zinc, gallium and the like to prepare a soft and easy-to-install thermal interface material, but the thermal conductivity after alloying is low, and the melting point is low, so that the risk of overflow short circuit exists. The patent CN102051157a discloses a composite prefabricated foil, which comprises a heat conducting metal foil and a heat conducting foam foil arranged on one or two surfaces of the heat conducting metal foil, wherein the two foil components are gold, silver, copper, aluminum, zinc or tin with purity greater than 97%, the composite prefabricated foil has high heat conductivity and no overflow, and the foam foil is easy to deform so as to reduce the contact thermal resistance, but the metal selected by the prefabricated foil has higher modulus, insufficient softness and larger contact thermal resistance. In patent CN102504769a, a metal thermal interface material is designed, which is formed by compounding indium and a porous metal sheet with through holes, wherein the porous metal sheet with through holes is made of copper, silver, zinc, titanium, magnesium, aluminum, gold, etc., and the composite material can reduce cost and improve thermal conductivity, but the contact thermal resistance is improved to some extent. In the patent CN104218010a, a thermal interface material comprising a low-melting-point metal layer, an indium foil layer and a low-melting-point metal layer in sequence from top to bottom is designed, and the thermal interface material is soft and easy to install, and after first use, the low-melting-point metal layer is melted and melted with the indium foil into an integral alloy, but the low-melting-point metal layer has the risk of overflowing short circuit in the melting process, and the alloy formed after the melting into an integral also has the risk of overflowing, and has lower thermal conductivity. In CN102883851a, a composite prefabricated foil is designed, which includes a core metal layer and a first and a second solder layers, where the solder layers are tin-based or indium-based solder alloy, and the core metal layer is gold, silver, copper, iron, magnesium, titanium, or an alloy thereof.
In summary, while some patents have attempted to increase the pure indium thermal conductivity, the modulus and thermal contact resistance are increased; other patents attempt to reduce contact resistance but at the same time result in a decrease in thermal conductivity or a decrease in melting point. It is therefore necessary to develop a thermal interface material that has a higher thermal conductivity than pure indium while maintaining the ductility of the indium sheet itself, avoiding an increase in interface contact resistance.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a multilayer composite indium-based thermal interface material and a preparation method thereof.
The invention is realized by the following technical scheme.
A multilayer composite indium-based thermal interface material, the thermal interface material comprising: the upper pure indium layer with the prefabricated configuration, the indium-based composite material layer composed of the indium matrix and the heat conducting particles and the lower pure indium layer with the prefabricated configuration are sequentially arranged from top to bottom.
Further, the thickness of the indium-based composite material layer is in the range of 0.1 mm-2 mm, and the thickness of the upper pure indium layer and the lower pure indium layer is in the range of 0.01 mm-1 mm; the layer thickness ratio of the upper pure indium layer or the lower pure indium layer to the indium-based composite material layer is 1:200-10:1, and the layer thickness ratio of the upper pure indium layer to the lower pure indium layer is 1:1-1:100.
Further, the volume fraction of the heat conducting particles in the indium-based composite material layer is 10% -40%.
Further, the heat conducting particles are one or more of aluminum, silver and copper particles, and the particle size of the heat conducting particles is 0.1-50 mu m.
Further, the surfaces of the aluminum, silver and copper particles are plated by adopting an electroplating, chemical plating or vapor deposition method, and the plating layer is aluminum oxide, gold, silver, chromium or nickel.
Further, the surfaces of the upper pure indium layer and the lower pure indium layer are provided with prefabricated configurations, and the configuration shapes are geometric shapes, bionic shapes or mimicry shapes.
Further, the geometric shape is a triangular pyramid, a triangular frustum, a cylinder or a truncated cone; the bionic shape is veins, cobweb or snowflakes; the mimicry shape is a wave.
The preparation method of the multilayer composite indium-based thermal interface material comprises the following steps: (1) Preparing an indium-based composite material through vacuum warm compaction and rolling to a required thickness; (2) Placing the indium-based composite material sheet obtained in the step (1) between two pure indium sheets for performing stack rolling; (3) And (3) respectively molding or rolling the upper surface and the lower surface of the three-layer composite material obtained in the step (2) to obtain a heat conduction configuration.
Further, in the step (1), the specific steps of preparing the indium-based composite material by adopting vacuum warm compaction include: fully and uniformly mixing the indium powder and the heat-conducting particle powder in a glove box under a protective atmosphere, pre-pressing the mixture into sheets under the pressure of 3-5 MPa, and placing the obtained pre-pressed sheets in a vacuum press with the pressure of 5-30 MPa and the temperature of 140-160 ℃ to prepare the indium-based composite material.
Further, in the step (2), the pure indium/indium-based composite material/pure indium three-layer composite material is prepared by adopting the roll-to-roll method, and the specific steps include: cutting two pure indium sheets and indium-based composite material sheets into sheets with equal rolling plane sizes, treating each surface of the two pure indium sheets and the indium-based composite material sheets with 10% dilute hydrochloric acid to remove oxide films, and stacking the two pure indium sheets and the indium-based composite material sheets in sequence, wherein the indium-based composite material sheets are positioned between the two pure indium sheets, rolling is carried out, the rolling temperature is 25-140 ℃, and the rolling speed is 2-5m/min.
Further, in the step (3), the surface configuration of the upper and lower layers of pure indium sheets is prepared by adopting a mould pressing or rolling mode, wherein when the configuration is in the geometric shapes of triangular pyramids, triangular terraces, cylinders, round tables and the like, the configuration is prepared by adopting a rolling mode; when the configuration is in a bionic shape such as veins, cobweb, snowflakes and the like or in a mimicry shape such as waves and the like, the configuration is prepared by adopting a mould pressing mode.
The configuration shape and the size are determined by the surface of the heating device or the heat dissipation device which is in contact with the indium-based composite material layer in actual condition, and the sizes of the upper pure indium layer and the lower pure indium layer are determined by the size of the heating device or the heat dissipation device which is in contact with the indium-based composite material layer in actual condition.
When in use, the layered thermal interface material can be directly placed between the heating device and the heat dissipation device, and is attached to the contact surface only through the pressure effect; the heat-conducting plate can be heated to a certain temperature and then placed between the heating device and the heat-radiating device, and the heat-conducting plate can be better attached to a contact interface under the condition of applying the same pressure.
The material provided by the invention has the advantages that the pure indium is selected as the upper layer and the lower layer in the material, and the indium is selected as the intermediate layer as the matrix, so that the three aspects of heat conductivity, ductility and melting point are considered. Pure indium has a higher thermal conductivity than tin, gallium, bismuth, and alloys thereof. And the melting point of pure indium is higher than that of tin, gallium, bismuth and alloys thereof, and the short circuit caused by overflow in the use process can be avoided. Pure indium has a higher thermal conductivity than aluminum, gold, copper, silver, etc., but has a better plasticity than aluminum, gold, copper, silver, etc., and is more easily deformed to adhere to a contact surface, thereby lowering interface thermal resistance. Pure indium is a preferred choice for the upper, lower and middle layers of the substrate.
The invention provides a multi-layer composite indium-based thermal interface material and a preparation method thereof, wherein the multi-layer composite indium-based thermal interface material comprises one indium-based composite material layer and two pure indium layers to form a thermal interface material with a three-layer structure, has higher heat conductivity than a pure indium sheet, and maintains excellent ductility and gap filling property of indium, thereby remarkably reducing interface thermal resistance of the interface material. The method comprises the following steps:
(1) The thermal interface material has higher thermal conductivity than that of pure indium sheets, the pure indium has 86W/mK, and the thermal interface material has 90-150W/mK; (2) The surface of the layered thermal interface material, which is contacted with the heating device or the radiating device, is a pure indium layer with a prefabricated structure, so that the material has good plasticity, and is easier to deform to fully fill a tiny gap between the heating element and the radiating element so as to reduce contact thermal resistance; (3) The layered thermal interface material has high melting point (more than 150 ℃), is always solid when in use, and can avoid the phenomenon of short circuit caused by melting overflow; (4) Other heat conducting particles are added into the layered thermal interface material, the layered thermal interface material is not completely pure indium, and the cost is obviously reduced compared with that of pure indium sheets.
Drawings
Fig. 1 is a schematic side view of a multilayer composite indium-based thermal interface material provided by the invention.
Fig. 2 is a schematic side view of another multi-layer composite indium-based thermal interface material provided by the present invention.
Reference numerals illustrate: a 1-indium-based composite layer; 2-applying a pure indium layer; 3-a lower pure indium layer; a 4-indium matrix; 5-heat conducting particles.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The multi-layer composite indium-based thermal interface material provided by the invention is composed of an upper pure indium layer, a lower pure indium layer and a middle indium-based composite material layer, wherein the heat conductivity of the indium-based composite material layer is higher than that of pure indium, the indium-based composite material taking indium as a matrix maintains the ductility of indium to a certain extent, meanwhile, the original ductility of indium is further reserved by the upper pure indium layer and the lower pure indium layer, the heat conductivity of the material is obviously improved, the contact thermal resistance of the material is reduced, and the cost is obviously reduced compared with that of the pure indium thermal interface material.
Example 1
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical copper particles with the particle diameter of 30 mu m, and the surfaces of the particles are plated with alumina coating; the volume fraction of copper particles in the indium-based composite material is 30%, and the balance is indium. Fully and uniformly mixing the indium powder and the copper powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 5MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 15MPa and the temperature of 150 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 0.1mm, the thickness of the indium-based composite material layer is 1mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 1:10, and the thickness ratio of the two pure indium layers is 1:1. Cutting the original pure indium sheet and indium-based composite material sheet into sheets with equal rolling plane sizes, treating each surface of the two pure indium sheets and indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium sheets, the indium-based composite material sheet and the pure indium sheet in sequence, wherein the rolling temperature is 25 ℃, and the rolling speed is 2m/min.
(3) The upper and lower pure indium layers in this embodiment have triangular pyramid shape, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is placed in a rolling mill with triangular pyramid-shaped configuration rollers. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 129W/m.K.
Example 2
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical silver particles with the particle size of 0.1 mu m; the volume fraction of silver particles in the indium-based composite material is 40%, and the balance is indium. Fully and uniformly mixing the indium powder and the silver powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 3MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 5MPa and the temperature of 140 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 0.1mm, the thickness of the indium-based composite material layer is 1mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 1:10, and the thickness ratio of the two pure indium layers is 1:1. Cutting the original pure indium sheet and indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking the pure indium sheet, the indium-based composite material sheet and the pure indium sheet in sequence, and rolling at the rolling temperature of 25 ℃ and the rolling speed of 3m/min.
(3) The upper and lower pure indium layers in this embodiment have wavy surface configurations, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is molded in a mold with wavy configuration. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 150W/m.K.
Example 3
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical aluminum particles with the particle diameter of 50 mu m, and the surfaces of the particles are plated with chromium coatings; the volume fraction of aluminum particles in the indium-based composite material is 10%, and the balance is indium. Fully and uniformly mixing the indium powder and the aluminum powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 5MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 15MPa and the temperature of 150 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 0.01mm, the thickness of the indium-based composite material layer is 0.1mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 1:10, and the thickness ratio of the two pure indium layers is 1:1. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 25 ℃, and the rolling speed is 4m/min.
(3) The upper and lower pure indium layers in this embodiment have snowflake-shaped surface configuration, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is molded in a mold with snowflake-shaped configuration. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 90W/m.K.
Example 4
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical copper particles with the particle diameter of 40 mu m, and silver plating layers are plated on the surfaces of the particles; the volume fraction of copper particles in the indium-based composite material is 20%, and the balance is indium. Fully and uniformly mixing the indium powder and the copper powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 4MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 25MPa and the temperature of 160 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 0.01mm, the thickness of the indium-based composite material layer is 2mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 1:200, and the thickness ratio of the two pure indium layers is 1:1. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 50 ℃, and the rolling speed is 5m/min.
(3) The upper and lower pure indium layers in this embodiment have cylindrical surface configuration, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is placed in a rolling mill with cylindrical configuration rollers to prepare the pure indium/indium three-layer composite material. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 122W/m.K.
Example 5
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical copper particles with the particle diameter of 30 mu m, and nickel plating layers are plated on the surfaces of the particles; the volume fraction of copper particles in the indium-based composite material is 15%, and the balance is indium. Fully and uniformly mixing the indium powder and the copper powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 5MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 15MPa and the temperature of 150 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 1mm, the thickness of the indium-based composite material layer is 2mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 1:2, and the thickness ratio of the two pure indium layers is 1:1. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 140 ℃, and the rolling speed is 4m/min.
(3) The upper and lower pure indium layers in this embodiment have a spider-web surface configuration, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in (2) is molded in a mold having a spider-web configuration. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 114W/m.K.
Example 6
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical copper particles with the particle diameter of 10 mu m, and the surfaces of the particles are plated with gold plating layers; the volume fraction of copper particles in the indium-based composite material is 28%, and the balance is indium. Fully and uniformly mixing the indium powder and the copper powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 5MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 30MPa and the temperature of 155 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 1mm, the thickness of the indium-based composite material layer is 0.1mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 10:1, and the thickness ratio of the two pure indium layers is 1:1. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 75 ℃, and the rolling speed is 2m/min.
(3) The upper and lower pure indium layers in this embodiment have triangular table surface configuration, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is placed in a rolling mill with triangular table configuration rollers to prepare the pure indium/pure indium three-layer composite material. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 118W/m.K.
Example 7
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical aluminum particles with the particle diameter of 30 mu m, and silver plating layers are plated on the surfaces of the particles; the volume fraction of aluminum particles in the indium-based composite material is 37%, and the balance is indium. Fully and uniformly mixing the indium powder and the aluminum powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 5MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 15MPa and the temperature of 150 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer is 0.1mm, the thickness of the lower pure indium layer is 1mm, the thickness of the indium-based composite material layer is 1mm, the layer thickness ratio of the upper pure indium layer to the indium-based composite material layer to the lower pure indium layer is 1:10 and 1:1 respectively, and the layer thickness ratio of the two pure indium layers is 1:10. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 90 ℃, and the rolling speed is 2m/min.
(3) The upper and lower pure indium layers in this embodiment have a vein-like surface configuration, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in (2) is molded in a mold with a vein-like configuration. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 105W/m.K.
Example 8
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical copper particles with the particle diameters of 50 mu m and 3 mu m, and the surfaces of the particles are plated with aluminum oxide coatings; the volume fraction of copper particles with the particle size of 50 μm in the indium-based composite material is 30%, the volume fraction of copper particles with the particle size of 3 μm is 10%, and the balance is indium. Fully and uniformly mixing the indium powder and the copper powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into sheets under 5MPa, and placing the pre-pressed sheets in a vacuum press with the pressure of 15MPa and the temperature of 150 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer and the lower pure indium layer is 0.1mm, the thickness of the indium-based composite material layer is 1mm, the thickness ratio of the pure indium layer to the indium-based composite material layer is 1:10, and the thickness ratio of the two pure indium layers is 1:1. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 25 ℃, and the rolling speed is 5m/min.
(3) The upper and lower pure indium layers in this embodiment have a round table shape, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is placed in a rolling mill with a round table-shaped configuration roller. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 138W/m.K.
Example 9
The embodiment relates to a multilayer composite indium-based thermal interface material and a preparation method thereof, wherein the preparation method comprises the following steps:
(1) The components, volume ratio and preparation process parameters of the indium-based composite material in the embodiment are as follows: the heat conducting particles are spherical copper particles with the particle size of 50 mu m and spherical silver particles with the particle size of 6 mu m, wherein the surfaces of the copper particles are plated with aluminum oxide plating layers; the volume fraction of copper particles in the indium-based composite material is 25%, the volume fraction of silver particles with the particle diameter of 6 μm is 15%, and the balance is indium. Fully and uniformly mixing indium powder, copper powder and silver powder in a glove box under a protective atmosphere according to the proportion, pre-pressing the mixture into a sheet under 5MPa, and placing the pre-pressed sheet in a vacuum press with the pressure of 15MPa and the temperature of 150 ℃ to prepare the indium-based composite material.
(2) The layer thickness ratio of the pure indium/indium-based composite material/pure indium three-layer composite material in the embodiment and the preparation process parameters are as follows: the thickness of the upper pure indium layer is 0.01mm, the thickness of the lower pure indium layer is 1mm, the thickness of the indium-based composite material layer is 1mm, the layer thickness ratio of the upper pure indium layer to the indium-based composite material layer is 1:100 and 1:1 respectively, and the layer thickness ratio of the two pure indium layers is 1:100. Cutting an original pure indium sheet and an original indium-based composite material sheet into sheets with the same rolling plane size, treating each surface of the pure indium sheet and the indium-based composite material sheet with 10% dilute hydrochloric acid to remove an oxide film, stacking and rolling the pure indium, the indium-based composite material and the pure indium in sequence, wherein the rolling temperature is 25 ℃, and the rolling speed is 3m/min.
(3) The upper and lower pure indium layers in this embodiment have triangular pyramid shape, and the pure indium/indium-based composite material/pure indium three-layer composite material rolled in step (2) is placed in a rolling mill with triangular pyramid-shaped configuration rollers. The preparation is completed, and the multilayer composite indium-based thermal interface material is obtained, wherein the thermal conductivity of the interface material is 143W/m.K.
The foregoing description of the preferred embodiments of the invention is merely illustrative of the invention and is not intended to be limiting. It should be noted that, for those skilled in the art, other equivalent modifications can be made in light of the technical teaching provided by the present invention, and the present invention can be implemented as the scope of protection.

Claims (11)

1. A multilayer composite indium-based thermal interface material, the thermal interface material comprising: the upper pure indium layer with the prefabricated configuration, the indium-based composite material layer composed of the indium matrix and the heat conducting particles and the lower pure indium layer with the prefabricated configuration are sequentially arranged from top to bottom.
2. The thermal interface material of claim 1, wherein the indium-based composite material has a layer thickness in the range of 0.1mm to 2mm, and the upper and lower pure indium layers each have a layer thickness in the range of 0.01mm to 1mm; the layer thickness ratio of the upper pure indium layer or the lower pure indium layer to the indium-based composite material layer is 1:200-10:1, and the layer thickness ratio of the upper pure indium layer to the lower pure indium layer is 1:1-1:100.
3. The thermal interface material of claim 1, wherein the volume fraction of thermally conductive particles in the indium-based composite layer is 10% -40%.
4. The thermal interface material of claim 1, wherein the thermally conductive particles are one or more of aluminum, silver, and copper particles, and the thermally conductive particles have a particle size of 0.1 μm to 50 μm.
5. The thermal interface material of claim 4 wherein the aluminum, silver, copper particles are plated with aluminum oxide, gold, silver, chromium or nickel using electroplating, electroless plating or vapor deposition.
6. The thermal interface material of claim 1 wherein the upper and lower pure indium layers are provided with preformed configurations on their surfaces, the configurations being geometric, biomimetic or mimicking.
7. The thermal interface material of claim 6, wherein the geometric shape is a triangular pyramid, a cylinder, or a truncated cone; the bionic shape is veins, cobweb or snowflakes; the mimicry shape is a wave.
8. A method of preparing the multilayer composite indium-based thermal interface material of any one of claims 1-7, comprising: (1) Preparing an indium-based composite material through vacuum warm compaction and rolling to a required thickness; (2) Placing the indium-based composite material sheet obtained in the step (1) between two pure indium sheets for performing stack rolling; (3) And (3) respectively molding or rolling the upper surface and the lower surface of the three-layer composite material obtained in the step (2) to obtain a heat conduction configuration.
9. The method of claim 8, wherein in step (1), the vacuum warm-pressing process comprises: uniformly mixing the indium powder and the heat-conducting particle powder, pre-pressing the mixture into a sheet under the pressure of 3-5 MPa, and then performing warm pressing on the obtained pre-pressed sheet under the pressure of 5-30 MPa at the temperature of 140-160 ℃ to prepare the indium-based composite material.
10. The method of claim 8, wherein in step (2), the lapping process comprises: cutting two pure indium sheets and indium-based composite material sheets into sheets with equal rolling plane sizes, treating each surface of the two pure indium sheets and the indium-based composite material sheets with dilute hydrochloric acid to remove an oxide film, and sequentially stacking the two pure indium sheets and the indium-based composite material sheets, wherein the indium-based composite material sheets are positioned between the two pure indium sheets, and rolling the two pure indium sheets at the rolling temperature of 25-140 ℃ and the rolling speed of 2-5m/min.
11. The method according to claim 8, wherein in the step (3), the surface configuration of the upper and lower pure indium sheets is prepared by means of molding or rolling, wherein the configuration is prepared by means of rolling when the configuration is a geometric shape; when the configuration is a bionic shape or a mimicry shape, the configuration is prepared by adopting a mould pressing mode.
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