CN115828574A - Plasma spraying parameter determination method - Google Patents

Plasma spraying parameter determination method Download PDF

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CN115828574A
CN115828574A CN202211503716.4A CN202211503716A CN115828574A CN 115828574 A CN115828574 A CN 115828574A CN 202211503716 A CN202211503716 A CN 202211503716A CN 115828574 A CN115828574 A CN 115828574A
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factor
ctr
opt
parameter
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CN115828574B (en
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朱文健
顾鹏铭
徐国俊
顾仁宝
李伟东
周宇伟
刘兴明
韩伟男
薛弘宇
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Jiangsu Kaiweites Semiconductor Technology Co ltd
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Abstract

The invention discloses a method for determining plasma spraying parameters, which belongs to the technical field of computers, and comprises the steps of sequentially determining and optimizing the spraying parameters by using multiple stages, so that the optimal parameters are found in a plasma spraying parameter data test, the corrosion influence degree of a plasma etching process is reduced by reducing the test times of etching rate, the test quality is ensured, important influence factors are avoided being omitted, and the problem that the short plate of the traditional orthogonal experiment is only limited to the optimal combination of factor levels, is an interval with a larger range and cannot really find the optimal parameters of equipment is solved.

Description

Plasma spraying parameter determination method
Technical Field
The invention belongs to the technical field of computers, and particularly relates to a method for determining plasma spraying parameters.
Background
The reaction gas for plasma etching comprises CF4/O2, NF3, cl2, CH4/Ar and the like, a large amount of active free radicals such as Cl radicals and F radicals can be generated in the dry plasma etching process, and when the active free radicals etch semiconductor devices, the active free radicals can also corrode the inner surfaces of plasma etching process cavities made of aluminum and aluminum alloy, and the strong corrosion generates a large amount of particles, so that not only is the production equipment required to be maintained frequently, but also the failure of the etching process cavities and the damage of the devices can be even caused in serious cases.
With the development of thermal spraying techniques, particularly plasma spraying techniques, and the diversification of ceramic materials, it not only technically but also economically solves the problem of erosion of plasma etching process chambers. However, as the size of the wafer increases, the inner diameter of the plasma etching process chamber has increased from 400mm to 500-600 mm, and the corresponding plasma power has also increased, so that the porosity and the bonding force of the device to the ceramic coating have become higher and higher.
Ceramic coating performance is affected by a number of factors in the spray equipment, such as: powder feeding argon, powder feeding amount, current, main argon, hydrogen and the like, wherein the physical and chemical properties of the spraying powder are as follows: particle size, density, sphericity, etc. The factors are comprehensively and systematically tested to search corresponding influence effects, so that a large amount of experimental work is necessarily required to be faced, a large amount of working hours and material consumption are generated, and the conditions are limited. Therefore, a scientific experiment design method is needed, spraying operation practice is combined, a set of scientific and efficient test analysis method is needed, experimental data results are needed to meet practical requirements of production requirements, and meanwhile corrosion problems of the plasma etching process can be reduced as much as possible.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method for determining plasma spraying parameters, which comprises the following steps:
s1, determining test factors, factor levels and test indexes of a first-stage test of plasma spraying, wherein the test factors comprise powder feeding argon A1, powder feeding amount A2, current A3, main argon A4, hydrogen A5, spraying distance A6 and turntable rotating speed A7, the test indexes comprise porosity C1, bonding strength C2, hardness C3 and dielectric constant C4 of the coating, and the factor levels are that 3 levels are selected from seven test factors represented by the A1-A7 in a range supported by test equipment;
s2, determining an orthogonal test table, and determining a test scheme, wherein the test scheme comprises test factors and combination of factor levels, and is expressed as
Figure BDA0003967358200000021
Wherein k =1,2,.., 7, L =1,2,3, indicating the value of the experimental factor represented by Ak at level L;
s3, testing according to the orthogonal test table, and measuring the porosity C1, the bonding strength C2, the hardness C3 and the dielectric constant C4 of the coating;
s4, calculating single-factor contribution rates of powder feeding argon A1, powder feeding amount A2, current A3, main argon A4, hydrogen A5, spraying distance A6 and rotary table rotating speed A7 to porosity C1, bonding strength C2, hardness C3 and dielectric constant C4;
s5, determining the comprehensive contribution rate according to the single-factor contribution rate, and when the comprehensive contribution rate exceeds a decision threshold of a single-item test index, determining test factors corresponding to the comprehensive contribution rate exceeding the decision threshold and corresponding factor levels as test parameter values tested in the first stage, wherein the test parameter values are n items;
s6, determining default test factors of the seven test factors represented by A1-A7 in the test parameter values tested in the first stage, determining default test indexes of four test indexes represented by C1-C4 in a single test index with up-to-standard comprehensive contribution rate, and determining (7-n) default test factors;
s7, determining test factors, factor levels and test indexes of a second-stage test of plasma spraying, wherein the test factors comprise seven test factors represented by A1-A7, the seven test factors comprise (7-n) default test factors and test parameter values of the first-stage test with values determined in the first-stage test, the test indexes further comprise an etching rate C0, the factor levels are that (7-n) test factors represented by the (7-n) default test factors are selected from 3 levels in a range supported by corresponding test equipment, and n parameter combinations are randomly selected, and the test parameter value requirements of the test factors in the parameter combinations are different from the determined test parameter values of the first-stage test;
s8, determining a numerical relation model between the etching rate C0 and seven test factors represented by A1-A7
Figure BDA0003967358200000031
Obtaining m by linear fitting k (k =1,2, …, 7);
s9, removing n test parameter values of the determined first-stage test, comprehensively sequencing the remaining (7-n) test factors to obtain the optimal factor level of each of the remaining (7-n) test factors, and determining the theoretical optimal process parameter levels P1-P7 of the test factors by combining the test parameter values of the first-stage test;
step S10, determining an optimal process parameter interval corresponding to the optimal process parameter level of each test factor according to the step S9;
s11, uniformly sampling in an optimal process parameter interval corresponding to the optimal process parameter level of each factor, selecting w sampling points, and generating all test combinations determined by the optimal process parameters, including w 7 A combination of items;
step S12, for the w 7 Combining terms, namely obtaining a value for predicting the etching rate by using the numerical relation model f (C0) determined in the step S9, and measuring the porosity C1, the bonding strength C2, the hardness C3 and the dielectric constant C4 of the coating;
step S13, for w 7 The item combinations are comprehensively ordered to determine the top rankAnd combining X parameters, measuring the etching rate C0 of the X parameter combination sample, and determining the parameter combination of the optimal sample as the final plasma spraying parameter.
In step S4, the method for calculating the single-factor contribution rate includes:
calculate each
Figure BDA0003967358200000041
Corresponding individual contribution ratio
Figure BDA0003967358200000042
Wherein L =1 corresponds to the lowest factor level, L =3 corresponds to the highest factor level, and L =2 corresponds to the factor level located in the middle of the two.
For the
Figure BDA0003967358200000043
The mean value of the Cd measurement is expressed as
Figure BDA0003967358200000044
Where d =1,2,3,4, the measured mean is the mean of all Cd with Ak at a factor level of L;
for L =1, the number of bits in the signal,
Figure BDA0003967358200000045
the single contribution rate of (2) is calculated as follows:
Figure BDA0003967358200000046
for L =2, the number of pulses,
Figure BDA0003967358200000051
the single contribution rate of (2) is calculated as follows:
Figure BDA0003967358200000052
for L =3, the number of the segments is,
Figure BDA0003967358200000053
the single contribution rate of (2) is calculated as follows:
Figure BDA0003967358200000054
in step S5, the comprehensive contribution rate is determined according to the single-factor contribution rate, and specifically: determining
Figure BDA0003967358200000055
wherein Ctropt (T Ak ) Is composed of
Figure BDA0003967358200000056
Recording the factor level corresponding to the optimal term as Ctr opt (T Ak ) The additional information of (2);
for any Cd (d =1,2,3,4), ctr is determined opt (T Ak ) (k =1,2.. 7), and determining the optimal term combination [ Ctr opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj )]。
wherein ,Ctropt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Is Ctr opt (T Ak ) (k =1,2.. 7) three terms with the maximum absolute value and the same direction as the optimization target direction, and recording the ranking sequence of the single factor contribution;
calculating the comprehensive contribution rate:
Ctr_ALL opt (Cd)＝Ctr opt ′(T Ah )+Ctr opt ′(T Ai )+Ctr opt ′(T Aj )。
when Ctr is opt ′(T Ah )，Ctr opt ′(T Ai ) Or Ctr opt ′(T Aj ) Ctr when it corresponds to C1 opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Taking a negative value.
Ctr when corresponding to C2-C4 opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) The original value of (2).
wherein ,Ctropt (T Ak ) Is composed of
Figure BDA0003967358200000061
The optimal term in (1) is
Figure BDA0003967358200000062
Wherein: the optimal term of the porosity C1 corresponds to the minimum value term; the optimal item of the bonding strength C2 corresponds to a maximum value item; the optimal item of the hardness C3 corresponds to a maximum value item; the optimal term of the dielectric constant C4 corresponds to the maximum term.
When the comprehensive contribution rate exceeds a decision threshold of a single test index, determining test factors and corresponding factor levels corresponding to the comprehensive contribution rate exceeding the decision threshold as test parameter values tested in the first stage, including:
when the total contribution Ctr _ ALL opt (Cd)≥Threshold deter When Ctr _ ALL is determined opt Ctr corresponding to (Cd) opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) The factor level as the additional information is taken as the factor level of the corresponding test factor.
Wherein, when there is different total contribution Ctr _ ALL opt (Cd) is greater than a decision threshold, and when the factor levels of the determined test factors conflict, determining the test parameter value of the first-stage test according to the following rule:
step S51, when the factor levels of the determined test factors conflict, firstly, the Ctr corresponding to each factor level is judged opt Ranking the single factor contribution of the value in the optimal item combination, and determining the factor level with the top ranking as the test parameter value of the test factor tested in the first stage;
step S52, when the ranks of the two are the same, determining the Ctr opt The term having the largest absolute value of the values corresponds toIs determined as the value of the test parameter of the test factor tested in the first stage.
In step S9, the step of comprehensively sorting the remaining (7-n) test factors to obtain the optimal factor level of each of the remaining (7-n) test factors, and determining the theoretical optimal process parameter levels P1 to P7 of the test factors by combining the test parameter values tested in the first stage includes: and for each test factor of the rest (7-n) items, calculating the comprehensive change rate of the test factor to the test indexes of C0-C4 under each factor level, determining the factor level corresponding to the optimization result as the optimal factor level of the test factor when the comprehensive change rate is the optimization result until the optimal factor level of each test factor of the rest (7-n) items is determined, and determining the theoretical optimal process parameter levels P1-P7 of the test factors by combining the test parameter values tested in the first stage.
Wherein, the calculation mode of the comprehensive change rate is as follows:
for each test factor of the remaining (7-n) terms, calculate each term
Figure BDA0003967358200000071
Individual contribution rate of corresponding test index
Figure BDA0003967358200000072
d =0,1,2,3,4, the term is calculated
Figure BDA0003967358200000073
Corresponding integrated rate of change
Figure BDA0003967358200000074
Figure BDA0003967358200000075
wherein ,
Figure BDA0003967358200000076
in the case where the test factor Ak is at a factor level of LThe single contribution rate of the test index Cd;
determining the optimal factor level corresponding to Ak as:
Figure BDA0003967358200000081
the max (.) function indicates the maximum function; and combining the optimal factor levels of the rest (7-n) items with the test parameter values tested in the first stage to determine the theoretical optimal process parameter levels P1-P7 of the factor levels of the experimental factors.
In step S10, the optimal process parameter interval corresponding to the optimal process parameter level of each test factor is determined according to step S9.
The method specifically comprises the following steps: the optimal process parameter interval is 5% of the range supported by the up-and-down floating test equipment of the optimal process parameter levels P1-P7 of each test factor.
I.e., [ Pk-R k *5％，Pk+R k *5％](k =1,2.. 7), wherein R k And the total test range supported by the test equipment corresponding to the k test factor.
Wherein, step S13, for w 7 Comprehensively sequencing the item combinations, determining X item parameter combinations with the top rank, measuring the etching rate C0 of X item parameter combination samples, and determining the parameter combination of the optimal sample as the final plasma spraying parameter, wherein the specific steps are as follows:
step S13_1, calculating w 7 Comprehensive ranking of item combinations:
for each combination of test factors Ak and sampled values of corresponding sampling points w
Figure BDA0003967358200000082
Calculate each item
Figure BDA0003967358200000083
Single contribution rate of corresponding test index Cd
Figure BDA0003967358200000084
Calculate the item
Figure BDA0003967358200000085
Corresponding estimated integrated change rate
Figure BDA0003967358200000086
Figure BDA0003967358200000087
wherein ,
Figure BDA0003967358200000088
d =1,2,3,4 is the univariate contribution determined from the measurements of C1-C4,
Figure BDA0003967358200000089
d =0 is a univariate contribution rate determined by obtaining a value of the predicted etching rate using the numerical relationship model f (C0) determined in step S9;
step S13_2, determine
Figure BDA0003967358200000091
Performing etching rate C0 measurement on the X parameter combination samples in the front ranking to obtain the measured value VL of C0-C4 of each sample in the X parameter combination samples C0 -VL C4 Calculating an optimized evaluation value TVL of each sample, TVL = VL C4 +VL C3 +VL C2 -VL C1 -VL C0 (ii) a And S13_3, combining the parameters of the sample with the maximum TVL value to be used as the final plasma spraying parameters.
Compared with the prior art, the method provided by the invention has the advantages that the optimal parameters are found in the plasma spraying parameter data test, the corrosion influence degree of the plasma etching process is reduced by reducing the testing times of the etching rate, the spraying effect is better, the efficiency is higher, and the spraying quality is higher. The method can ensure the test quality, avoid missing important influence factors, save the test time, and simultaneously make up for the short board of the traditional orthogonal experiment, and the optimal parameters of the orthogonal experiment are only limited to the optimal combination of factor levels, are an interval with a large range, and can not really find the optimal parameters of the equipment.
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The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
fig. 1 is a flow chart illustrating a plasma spray parameter determination method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, and "a plurality" typically includes at least two.
It should be understood that while the terms first, second, third, etc. may be used in embodiments of the present invention to describe … …, these … … should not be limited to these terms. These terms are used only to distinguish … …. For example, a first … … may also be referred to as a second … …, and similarly, a second … … may also be referred to as a first … …, without departing from the scope of embodiments of the present invention.
It should be understood that the term "and/or" as used herein is merely one type of association that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
The words "if", as used herein, may be interpreted as "at … …" or "at … …" or "in response to a determination" or "in response to a detection", depending on the context. Similarly, the phrases "if determined" or "if detected (a stated condition or event)" may be interpreted as "when determined" or "in response to a determination" or "when detected (a stated condition or event)" or "in response to a detection (a stated condition or event)", depending on the context.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of another identical element in a good or device that comprises the element.
Alternative embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the present invention discloses a method for determining plasma spraying parameters, comprising the following steps:
s1, determining test factors, factor levels and test indexes of a first-stage test of plasma spraying, wherein the test factors comprise powder feeding argon A1, powder feeding amount A2, current A3, main argon A4, hydrogen A5, spraying distance A6 and turntable rotating speed A7, the test indexes comprise porosity C1, bonding strength C2, hardness C3 and dielectric constant C4 of the coating, and the factor levels are that 3 levels are selected from seven test factors represented by the A1-A7 in a range supported by test equipment;
base material 6061 aluminium, material square test specimen 15 x 5mm in size and
Figure BDA0003967358200000111
25 x 5mm round specimens. Before plasma spraying coating, the base material is pretreated by sand blasting, and the surface roughness Ra is controlled between 6 and 7 mu m. The powder material used for preparing the coating is produced by shin-Etsu chemical industry Co., ltd, wherein the purity of Y2O3 powder is 99.99%; YAG contains 54-60% of Y2O3 and 40-46% of Al2O 3; YF3 accounts for 99.9%. The spray equipment used in the experiment was a UnicoatPro type atmospheric plasma spray equipment manufactured by Oerlikon Metco, switzerland. The changed factors are powder feeding argon, powder feeding amount, current, rotating speed of the turntable, main argon, hydrogen and spraying distance respectively, and 3 proper levels are selected for 7 factors in the range supported by the equipment. The preparation process of the test sample comprises the following steps of fixing the prepared sample on a horizontal carrying platform by using a high-temperature plasma impact resistant double-sided adhesive tape, enabling the surface to be sprayed of the base material to face upwards, and carrying out rotary spraying by using a plasma spray gun to finally prepare the required sample.
As shown in Table 1, in the range supported by the test equipment used in this example, three levels of the powder feeding argon gas A1, the powder feeding amount A2, the current A3, the main argon gas A4, the hydrogen gas A5, the spraying pitch A6, and the turntable rotation speed A7 were labeled, as for the powder feeding amount A2, 20g/min,25g/min, and 30g/min, respectively, which were within the range supported by the powder feeding amount of the plasma torch equipment.
Step S2, determining an orthogonal test table, determining a test scheme, wherein the test scheme comprises a combination of test factors and factor levels, and is expressed as
Figure BDA0003967358200000121
Wherein k =1,2,.., 7l =1,2,3, indicates the value of the experimental factor represented by Ak at level L;
for example, the orthogonal experiment table may be designed as follows:
TABLE 1
Figure BDA0003967358200000131
S3, testing according to the orthogonal test table, and measuring the porosity C1, the bonding strength C2, the hardness C3 and the dielectric constant C4 of the coating;
s4, calculating single-factor contribution rates of powder feeding argon A1, powder feeding quantity A2, current A3, main argon A4, hydrogen A5, spraying distance A6 and rotary table rotating speed A7 to porosity C1, bonding strength C2, hardness C3 and dielectric constant C4;
s5, determining the comprehensive contribution rate according to the single-factor contribution rate, and when the comprehensive contribution rate exceeds a decision threshold of a single-item test index, determining test factors corresponding to the comprehensive contribution rate exceeding the decision threshold and corresponding factor levels as test parameter values tested in the first stage, wherein the test parameter values are n items;
s6, determining default test factors of the seven test factors represented by A1-A7 in the test parameter values of the first-stage test, determining default test indexes of four test indexes represented by C1-C4 in the single test indexes with the standard comprehensive contribution rate, and determining (7-n) default test factors;
s7, determining test factors, factor levels and test indexes of a second-stage test of plasma spraying, wherein the test factors comprise seven test factors represented by A1-A7, the seven test factors comprise (7-n) default test factors and test parameter values of the first-stage test with values determined in the first-stage test, the test indexes further comprise an etching rate C0, the factor levels are that (7-n) test factors represented by the (7-n) default test factors are selected from 3 levels in a range supported by corresponding test equipment, and n parameter combinations are randomly selected, and the test parameter value requirements of the test factors in the parameter combinations are different from the determined test parameter values of the first-stage test;
the method for testing the etching rate comprises the steps of sticking high-temperature-resistant glue on the periphery of a sample, forming an etching area and an unetched area on the surface of the sample, placing the sample into a plasma etching machine for etching, and introducing Ar/O gas 2 /CF 4 (50. After etching, putting the sample in alcohol for cleaning, and detecting an etched area and an un-etched area by a step profilerAnd obtaining the etching depth through the height difference of the boundary, and further converting the etching rate. Therefore, when the etching rate test is carried out, the required test time is very long, the time for obtaining the production process parameters can be greatly shortened by reducing the testing times of the etching rate as far as possible, and the loss of the etching rate test on the inner cavity of the ion etcher can be reduced.
S8, determining a numerical relation model between the etching rate C0 and seven test factors represented by A1-A7
Figure BDA0003967358200000151
Obtaining m by linear fitting k (k =1,2, …, 7);
s9, removing n test parameter values of the determined first-stage test, comprehensively sequencing the remaining (7-n) test factors to obtain the optimal factor level of each of the remaining (7-n) test factors, and determining the theoretical optimal process parameter levels P1-P7 of the test factors by combining the test parameter values of the first-stage test;
step S10, determining an optimal process parameter interval corresponding to the optimal process parameter level of each test factor according to the step S9;
s11, uniformly sampling in an optimal process parameter interval corresponding to the optimal process parameter level of each factor, selecting w sampling points, and generating all test combinations determined by the optimal process parameters, including w 7 A combination of items;
step S12, for the w 7 Combining terms, namely obtaining a value for predicting the etching rate by using the numerical relation model f (C0) determined in the step S9, and measuring the porosity C1, the bonding strength C2, the hardness C3 and the dielectric constant C4 of the coating;
step S13, for w 7 And comprehensively sequencing the item combinations, determining X item parameter combinations ranked at the front, measuring the etching rate C0 of the X item parameter combination samples, and determining the parameter combination of the optimal sample as the final plasma spraying parameter.
In one embodiment, the method for calculating the single-factor contribution rate in step S4 includes:
calculate each one
Figure BDA0003967358200000161
Corresponding individual contribution ratio
Figure BDA0003967358200000162
Wherein the factor level corresponding to L =1 is lowest, the factor level corresponding to L =3 is highest, and the factor level corresponding to L =2 is located in the middle of the two;
for the
Figure BDA0003967358200000163
The mean value of the Cd measurement is expressed as
Figure BDA0003967358200000164
Where d =1,2,3,4, the measured mean is the mean of all Cd with Ak at a factor level of L;
for L =1, the number of bits in the signal,
Figure BDA0003967358200000165
the single term contribution rate of (c) is calculated as follows:
Figure BDA0003967358200000166
for L =2, the number of bits in the bit stream is,
Figure BDA0003967358200000167
the single contribution rate of (2) is calculated as follows:
Figure BDA0003967358200000168
for L =3, the number of the segments is,
Figure BDA0003967358200000171
the single contribution rate of (2) is calculated as follows:
Figure BDA0003967358200000172
in step S5, the comprehensive contribution rate is determined according to the single-factor contribution rate, and specifically: determining
Figure BDA0003967358200000173
wherein Ctropt (T Ak ) Is composed of
Figure BDA0003967358200000174
Recording the factor level corresponding to the optimal term as Ctr opt (T Ak ) The additional information of (c).
For any Cd (d =1,2,3,4), ctr was determined opt (T Ak ) (k =1,2.. 7), and determining the optimal term combination [ Ctr opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj )]。
wherein ,Ctropt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Is Ctr opt (T Ak ) (k =1,2.. 7) three terms with the same absolute value as the optimization target direction and recording the ranking sequence of the single factor contribution; calculating the comprehensive contribution rate Ctr _ ALL opt (Cd)＝Ctr opt ′(T Ah )+Ctr opt ′(T Ai )+Ctr opt ′(T Aj )。
When Ctr is measured opt ′(T Ah )，Ctr opt ′(T Ai ) Or Ctr opt ′(T Aj ) Ctr when it corresponds to C1 opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Taking a negative value.
Ctr when corresponding to C2-C4 opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) The original value of (2).
In one embodiment, ctr opt (T Ak ) Is composed of
Figure BDA0003967358200000175
The optimum term in (1) is
Figure BDA0003967358200000181
Wherein:
the optimal term of the porosity C1 corresponds to the minimum value term;
the optimal item of the bonding strength C2 corresponds to a maximum value item;
the optimal item of the hardness C3 corresponds to a maximum value item;
the optimal term of the dielectric constant C4 corresponds to the maximum term.
Wherein, ctr is opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Is the optimum term selected, so the changing directions of the three are generally the same as the optimization target, and in addition, the etching rate is as small as possible, which can be understood as that C0-C1 correspond to negative values, and C2-C4 correspond to positive values.
In one embodiment, when the comprehensive contribution rate exceeds a decision threshold of a single test index, determining a test factor and a corresponding factor level corresponding to the comprehensive contribution rate exceeding the decision threshold as a test parameter value of the first stage test, including:
when the total contribution Ctr _ ALL opt (Cd)≥Threshold deter When Ctr _ ALL is determined opt Ctr corresponding to (Cd) opt (T Ah )，Ctr opt (T Ai )，Ctr op t(T Aj ) The factor level as the additional information is taken as the factor level of the corresponding trial factor.
In one embodiment, ctr _ ALL is used when there is a different aggregate contribution Ctr _ ALL opt (Cd) is greater than the decision threshold, and when the factor levels of the determined test factors conflict, determining the test parameter value of the first-stage test according to the following rule:
step S51, when the factor levels of the determined test factors conflict, first, the Ctr corresponding to each factor level is judged opt The single factor contribution of the optimal item combination is ranked, and the level of the top factor is determined as the first stage test of the test factorTesting parameter values;
step S52, when the ranks of the two are the same, determining the Ctr opt The factor level corresponding to the term whose absolute value is the greatest is determined as the test parameter value for the test factor tested in the first stage.
In one embodiment, in the step S9, comprehensively ranking the remaining (7-n) test factors to obtain an optimal factor level of each of the remaining (7-n) test factors, and determining the theoretically optimal process parameter levels P1 to P7 of the test factors by combining the test parameter values tested in the first stage, the method includes:
and for each test factor of the rest (7-n) items, calculating the comprehensive change rate of the test factor to the test indexes of C0-C4 under each factor level, determining the factor level corresponding to the optimization result as the optimal factor level of the test factor when the comprehensive change rate is the optimization result until the optimal factor level of each test factor of the rest (7-n) items is determined, and determining the theoretical optimal process parameter levels P1-P7 of the test factors by combining the test parameter values tested in the first stage.
In one embodiment, the calculation method of the integrated change rate is as follows:
for each trial factor of the remaining (7-n) terms, calculate each term
Figure BDA0003967358200000191
Individual contribution rate of corresponding test index
Figure BDA0003967358200000192
d =0,1,2,3,4, the term is calculated
Figure BDA0003967358200000193
Corresponding integrated rate of change
Figure BDA0003967358200000194
Figure BDA0003967358200000195
wherein ,
Figure BDA0003967358200000196
the single contribution rate to the test index Cd is obtained under the condition that the test factor Ak is at the factor level L;
determining the optimal factor level corresponding to Ak as:
Figure BDA0003967358200000201
the max (.) function indicates the maximum function;
and determining the theoretical optimal process parameter levels P1-P7 of the factor levels of the experimental factors by combining the optimal factor levels of the remaining (7-n) items and the test parameter values tested in the first stage.
In one embodiment, in the step S10, the determining, according to the step S9, an optimal process parameter interval corresponding to the optimal process parameter level of each test factor specifically includes:
the optimal process parameter interval is 5 percent of the range supported by the up-and-down floating test equipment of the optimal process parameter level P1-P7 of each test factor, namely [ Pk-R% k *5％，Pk+R k *5％](k =1,2.. 7), wherein R k And the total test range supported by the test equipment corresponding to the k test factor.
In one embodiment, step S13, for w 7 Comprehensively sequencing the item combinations, determining X item parameter combinations with the top rank, measuring the etching rate C0 of X item parameter combination samples, and determining the parameter combination of the optimal sample as the final plasma spraying parameter, wherein the specific steps are as follows:
step S13_1, calculating w 7 Comprehensive ranking of item combinations:
for each combination of test factors Ak and sampled values of corresponding sampling points w
Figure BDA0003967358200000202
Calculate each item
Figure BDA0003967358200000203
Single contribution rate of corresponding test index Cd
Figure BDA0003967358200000204
d =0,1,2,3,4, this term is calculated
Figure BDA0003967358200000205
Corresponding estimated integrated change rate
Figure BDA0003967358200000206
Figure BDA0003967358200000207
wherein ,
Figure BDA0003967358200000211
d =1,2,3,4 is the univariate contribution determined from the measurements of C1-C4,
Figure BDA0003967358200000212
d =0 is a univariate contribution rate determined by obtaining a value of the predicted etching rate using the numerical relationship model f (C0) determined in step S9;
step S13_2, determine
Figure BDA0003967358200000213
Performing etching rate C0 measurement on the X parameter combination samples in the front ranking to obtain the measured value VL of C0-C4 of each sample in the X parameter combination samples C0 -VL C4 Calculating an optimized evaluation value TVL of each sample, TVL = VL C4 +VL C3 +VL C2 -VL C1 -VL C0 ；
And S13_3, combining the parameters of the sample with the maximum TVL value to be used as the final plasma spraying parameters.
In one embodiment, a non-transitory computer storage medium is provided that stores computer-executable instructions that may perform the method steps described in the above embodiments.
Compared with the prior art, the method provided by the invention has the advantages that the optimal parameters are found in the plasma spraying parameter data test, the corrosion influence degree of the plasma etching process is reduced by reducing the testing times of the etching rate, the spraying effect is better, the efficiency is higher, and the spraying quality is higher. The method can ensure the test quality, avoid missing important influence factors, save the test time, and simultaneously make up for the short board of the traditional orthogonal experiment, and the optimal parameters of the orthogonal experiment are only limited to the optimal combination of factor levels, are an interval with a large range, and can not really find the optimal parameters of the equipment.
It should be noted that the computer readable medium in the present disclosure can be a computer readable signal medium or a computer readable storage medium or any combination of the two. A computer readable storage medium may be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination of the foregoing. More specific examples of the computer readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the present disclosure, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. In contrast, in the present disclosure, a computer readable signal medium may include a propagated data signal with computer readable program code embodied therein, for example, in baseband or as part of a carrier wave. Such a propagated data signal may take many forms, including, but not limited to, electro-magnetic, optical, or any suitable combination thereof. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to: electrical wires, optical cables, RF (radio frequency), etc., or any suitable combination of the foregoing.
The computer readable medium may be embodied in the electronic device; or may exist separately without being assembled into the electronic device.
Computer program code for carrying out operations for aspects of the present disclosure may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, smalltalk, C + +, and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or the connection may be made to an external computer (for example, through the Internet using an Internet service provider).
The flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The units described in the embodiments of the present disclosure may be implemented by software or hardware. Where the name of an element does not in some cases constitute a limitation on the element itself.
The foregoing describes preferred embodiments of the present invention, and is intended to provide a clear and concise description of the spirit and scope of the invention, and not to limit the same, but to include all modifications, substitutions, and alterations falling within the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A plasma spraying parameter determination method comprises the following steps:
s1, determining test factors, factor levels and test indexes of a first-stage test of plasma spraying, wherein the test factors comprise powder feeding argon A1, powder feeding amount A2, current A3, main argon A4, hydrogen A5, spraying distance A6 and rotating disc rotating speed A7, the test indexes comprise porosity C1, bonding strength C2, hardness C3 and dielectric constant C4 of a coating, and the factor levels are that 3 levels are selected from seven test factors represented by A1-A7 in a range supported by test equipment;
step S2, determining an orthogonal test table and a test scheme, wherein the test scheme comprises a combination of test factors and factor levels, and is expressed as
Figure FDA0003967358190000011
Wherein k =1,2,.., 7, L =1,2,3, indicating the value of the experimental factor represented by Ak at level L;
s3, testing according to the orthogonal test table, and measuring the porosity C1, the bonding strength C2, the hardness C3 and the dielectric constant C4 of the coating;
s4, calculating single-factor contribution rates of powder feeding argon A1, powder feeding amount A2, current A3, main argon A4, hydrogen A5, spraying distance A6 and rotating disc rotating speed A7 to porosity C1, bonding strength C2, hardness C3 and dielectric constant C4;
s5, determining the comprehensive contribution rate according to the single-factor contribution rate, and when the comprehensive contribution rate exceeds a decision threshold of a single-item test index, determining test factors corresponding to the comprehensive contribution rate exceeding the decision threshold and corresponding factor levels as test parameter values tested in the first stage, wherein the test parameter values are n items;
s6, determining default test factors of the seven test factors represented by A1-A7 in the test parameter values tested in the first stage, determining default test indexes of four test indexes represented by C1-C4 in a single test index with up-to-standard comprehensive contribution rate, and determining (7-n) default test factors;
s7, determining test factors, factor levels and test indexes of a second-stage test of plasma spraying, wherein the test factors comprise seven test factors represented by A1-A7, the seven test factors comprise (7-n) default test factors and test parameter values of the first-stage test with values determined in the first-stage test, the test indexes further comprise an etching rate C0, the factor levels are that (7-n) test factors represented by the (7-n) default test factors are selected from 3 levels in a range supported by corresponding test equipment, and n parameter combinations are randomly selected, and the test parameter value requirements of the test factors in the parameter combinations are different from the determined test parameter values of the first-stage test;
s8, determining a numerical relation model between the etching rate C0 and seven test factors represented by A1-A7
Figure FDA0003967358190000021
Obtaining m by linear fitting k (k =1,2,. 7);
s9, removing n test parameter values of the determined first-stage test, comprehensively sequencing the remaining (7-n) test factors to obtain the optimal factor level of each of the remaining (7-n) test factors, and determining the theoretical optimal process parameter levels P1-P7 of the test factors by combining the test parameter values of the first-stage test;
step S10, determining an optimal process parameter interval corresponding to the optimal process parameter level of each test factor according to the step S9;
s11, uniformly sampling in an optimal process parameter interval corresponding to the optimal process parameter level of each factor, selecting w sampling points, and generating all test combinations determined by the optimal process parameters, including w 7 A combination of items;
step S12, for the w 7 A combination of terms, obtaining a value for predicting an etching rate using the numerical relationship model f (C0) determined in step S9, and measuring a porosity C1, a bonding strength C2, a hardness C3, and a dielectric constant C4 of the coating layer;
step S13, for w 7 And comprehensively sequencing the item combinations, determining X item parameter combinations ranked at the front, measuring the etching rate C0 of the X item parameter combination samples, and determining the parameter combination of the optimal sample as the final plasma spraying parameter.
2. The plasma spraying parameter determining method as set forth in claim 1, wherein the calculation method of the single factor contribution rate in step S4 is:
calculate each
Figure FDA0003967358190000022
Corresponding individual contribution rate
Figure FDA0003967358190000023
Wherein the factor level corresponding to L =1 is lowest, the factor level corresponding to L =3 is highest, and the factor level corresponding to L =2 is located in the middle of the two;
for the
Figure FDA0003967358190000024
The mean value of the Cd measurement is expressed as
Figure FDA0003967358190000025
Where d =1,2,3,4, the measured mean is the mean of all Cd with Ak at a factor level of L;
for L =1, the number of bits in the signal,
Figure FDA0003967358190000026
the single contribution rate of (2) is calculated as follows:
Figure FDA0003967358190000031
for L =2, the number of pulses,
Figure FDA0003967358190000032
the single contribution rate of (2) is calculated as follows:
Figure FDA0003967358190000033
for L =3, the number of the segments is,
Figure FDA0003967358190000034
the single contribution rate of (2) is calculated as follows:
Figure FDA0003967358190000035
3. the plasma spraying parameter determining method according to claim 1, wherein the step S5 determines the comprehensive contribution rate according to the single-factor contribution rate, specifically: determining
Figure FDA0003967358190000036
wherein Ctropt (T Ak ) Is composed of
Figure FDA0003967358190000037
Recording the factor level corresponding to the optimal term as Ctr opt (T Ak ) The additional information of (2);
for any Cd (d =1,2,3,4), ctr is determined opt (T Ak ) (k =1,2.. 7) and determining the optimal term combination [ Ctr opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj )]Wherein Ctr is opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Is Ctr opt (T Ak ) (k =1,2.. 7) three terms with the maximum absolute value and the same direction as the optimization target direction, and recording the ranking sequence of the single factor contribution;
calculating the comprehensive contribution rate:
Ctr_ALL opt (Cd)＝Ctr opt ′(T Ah )+Ctr opt ′(T Ai )+Ctr opt ′(T Aj )，
when Ctr is opt ′(T Ah )，Ctr opt ′(T Ai ) Or Ctr opt ′(T Aj ) Ctr when it corresponds to C1 opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) Taking a negative value;
ctr when corresponding to C2-C4 opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) The original value of (2).
4. The method of claim 3, wherein Ctr is the parameter of plasma spraying opt (T Ak ) Is composed of
Figure FDA0003967358190000041
The optimal term in (1) is
Figure FDA0003967358190000042
Wherein:
the optimal term of the porosity C1 corresponds to the minimum value term; the optimal item of the bonding strength C2 corresponds to a maximum value item; the optimal item of the hardness C3 corresponds to a maximum value item; the optimal term of the dielectric constant C4 corresponds to the maximum term.
5. The plasma spraying parameter determining method as claimed in claim 1, wherein when the combined contribution rate exceeds a decision threshold of a single test index, determining a test factor corresponding to the combined contribution rate exceeding the decision threshold and a corresponding factor level as a test parameter value for the first stage test, comprises:
when the total contribution rate Ctr _ ALL opt (Cd)≥Threshold deter When Ctr _ ALL is determined opt Ctr corresponding to (Cd) opt (T Ah )，Ctr opt (T Ai )，Ctr opt (T Aj ) The factor level as the additional information is taken as the factor level of the corresponding trial factor.
6. The method of claim 5, wherein Ctr _ ALL is determined when there are different aggregate contributions Ctr _ ALL opt (Cd) is greater than the decision threshold, and when the factor levels of the determined test factors conflict, determining the test parameter value of the first-stage test according to the following rule:
step S51, when the factor levels of the determined test factors conflict, firstly, the Ctr corresponding to each factor level is judged opt Ranking the single factor contribution of the value in the optimal item combination, and determining the factor level with the top ranking as the test parameter value of the test factor tested in the first stage;
step S52, when the ranks of the two are the same, determining the Ctr opt The factor level corresponding to the term whose absolute value is the greatest is determined as the test parameter value for the test factor tested in the first stage.
7. The plasma spraying parameter determining method as claimed in any one of claims 1 to 2, wherein in the step S9, the remaining (7-n) test factors are comprehensively ranked to obtain the optimal factor level of each of the remaining (7-n) test factors, and the theoretical optimal process parameter levels P1 to P7 of the test factors are determined in combination with the test parameter values tested in the first stage, including:
and for each test factor of the rest (7-n) items, calculating the comprehensive change rate of the test factor to the test indexes of C0-C4 under each factor level, determining the factor level corresponding to the optimization result as the optimal factor level of the test factor when the comprehensive change rate is the optimization result until the optimal factor level of each test factor of the rest (7-n) items is determined, and determining the theoretical optimal process parameter levels P1-P7 of the test factors by combining the test parameter values tested in the first stage.
8. The plasma spray parameter determination method of claim 7, wherein the integrated rate of change is calculated by:
for each test factor of the remaining (7-n) terms, calculate each term
Figure FDA0003967358190000051
Individual contribution rate of corresponding test index
Figure FDA0003967358190000052
Calculate the item
Figure FDA0003967358190000053
Corresponding integrated rate of change
Figure FDA0003967358190000054
Figure FDA0003967358190000055
wherein ,
Figure FDA0003967358190000056
the single contribution rate to the test index Cd is obtained under the condition that the test factor Ak is at the factor level L;
determining the optimal factor level corresponding to Ak as:
Figure FDA0003967358190000057
the max (.) function indicates the maximum function;
and determining the theoretical optimal process parameter levels P1-P7 of the factor levels of the experimental factors by combining the optimal factor levels of the remaining (7-n) items and the test parameter values tested in the first stage.
9. The method for determining plasma spraying parameters according to claim 1, wherein in the step S10, the optimal process parameter interval corresponding to the optimal process parameter level of each test factor is determined according to the step S9, and specifically comprises:
the optimal process parameter interval is 5 percent of the range supported by the up-and-down floating test equipment of the optimal process parameter level P1-P7 of each test factor, namely [ Pk-R% k *5％，Pk+R k *5％](k =1,2.. 7), wherein R k And the total test range supported by the test equipment corresponding to the k test factor.
10. The plasma spray parameter determination method of claim 1, wherein step S13, for w 7 Comprehensively sequencing the item combinations, determining X item parameter combinations with the top rank, measuring the etching rate C0 of X item parameter combination samples, and determining the parameter combination of the optimal sample as the final plasma spraying parameter, wherein the specific steps are as follows:
step S13_1, calculating w 7 Comprehensive ranking of item combinations:
for each combination of test factors Ak and sampled values of corresponding sampling points w
Figure FDA0003967358190000061
Calculate each item
Figure FDA0003967358190000062
Single contribution rate of corresponding test index Cd
Figure FDA0003967358190000063
Calculate the item
Figure FDA0003967358190000064
Corresponding estimated integrated change rate
Figure FDA0003967358190000065
Figure FDA0003967358190000066
wherein ,
Figure FDA0003967358190000067
for the individual contribution ratios determined from the measurements of C1-C4,
Figure FDA0003967358190000068
a singleton contribution rate determined for obtaining a value of the predicted etching rate using the numerical relationship model f (C0) determined in step S9;
step S13_2, determine
Figure FDA0003967358190000069
Performing etching rate C0 measurement on the X parameter combination samples in the front ranking to obtain the measured value VL of C0-C4 of each sample in the X parameter combination samples C0 -VL C4 Calculating an optimized evaluation value TVL of each sample;
TVL＝VL C4 +VL C3 +VL C2 -VL C1 -VL C0 ；
and S13_3, combining the parameters of the sample with the maximum TVL value to be used as the final plasma spraying parameters.
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