CN115821356A

CN115821356A - Grid disc for wafer electroplating

Info

Publication number: CN115821356A
Application number: CN202211379724.2A
Authority: CN
Inventors: 张勇勇; 潘剑
Original assignee: Hefei Huixun Intelligent Technology Co ltd
Current assignee: Hefei Huixun Intelligent Technology Co ltd
Priority date: 2022-11-04
Filing date: 2022-11-04
Publication date: 2023-03-21

Abstract

The invention discloses a grid disc for wafer electroplating, which relates to the technical field of wafer electroplating and comprises the following components: a grid plate which is attracted with the wafer A; the conductive disc is arranged inside the grid disc and supplies power to the wafer A; the conductive disc comprises a power supply board, a plurality of concentric conductive rings are mounted at the top of the power supply board, the sizes of the conductive rings are different, and two adjacent conductive rings are connected through an elastic pad. According to the grid disc for wafer electroplating, the conductive disc with the plurality of conductive rings is adopted to uniformly electrify the wafer disc, so that the problem that the sizes of the conductive rings cannot be adjusted according to the sizes of wafers during wafer electroplating is effectively solved, the applicability of the device is further improved, electrodes can be uniformly applied to the wafers, metal ions can be uniformly paved on the surfaces of the wafers during electroplating, and the uniformity of a metal layer is improved.

Description

Grid disc for wafer electroplating

Technical Field

The invention relates to the technical field of wafers, in particular to a grid plate for wafer electroplating.

Background

The wafer refers to a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because the shape is circular; various circuit device structures can be fabricated on a silicon wafer to form an IC product with specific electrical functions. The starting material for the wafer is silicon, while the crust surface has an inexhaustible amount of silicon dioxide. The silicon dioxide ore is refined by an electric arc furnace, chloridized by hydrochloric acid and distilled to prepare high-purity polysilicon.

At present, current wafer is electroplated and is used net dish when using, deposits bench through depositing at the wafer and sets up first absorption platform, and first absorption platform is used for placing the wafer, deposits under platform and the state of apron connection at the wafer, and the wafer is tightly pressed and is pasted on first absorption platform, forms the negative pressure in the first absorption platform promptly and in order firmly adsorbing the wafer for the leakproofness after the wafer installation is better, and then improves the structure sealing performance of wafer electroplating jig, promotes electroplating effect and quality. Secondly, the wafer electroplating device comprises an electroplating machine table and the wafer electroplating jig, the wafer electroplating jig can be conveniently matched with the electroplating machine table, the operation is more convenient, and the electroplating efficiency is high.

However, in the implementation process of the above technical scheme, at least the following technical problems are found:

1. the size of the conductive ring cannot be adjusted according to the size of the wafer: when the existing wafer is electroplated, the wafer needs to be connected with an electrode firstly, and then the wafer is inserted into electroplating solution for electroplating, when the wafer is connected, the existing annular conducting ring needs to be connected, but because the shape and the size of the wafer are different, the conducting ring with the corresponding size and the corresponding shape needs to be used for connecting with the wafer, so that resources are wasted, meanwhile, the conducting ring needs to be manually connected with the wafer, and the working efficiency of wafer electroplating is influenced;

2. uneven thickness of the metal layer formed by electroplating: since the wafer (made of a silicon material, which is one of semiconductor materials and has conductivity but is weak) has poor conductivity, this results in a thicker metal layer (precipitated metal) near the electrical connection terminals and a thinner metal layer (precipitated metal) at positions farther from the electrical connection terminals;

3. the electroplating cost is high, and the electroplating environment is limited: in order to solve the problem of non-uniformity of the conventional wafer electroplating, the conventional solution is to increase the conductivity of the wafer by adopting high temperature, because the conductivity of silicon (a material for manufacturing the wafer) has a great relationship with the temperature thereof, the conductivity increases with the increase of the temperature and reaches the maximum at about 1480 ℃, and decreases with the increase of the temperature after the temperature exceeds 1600 ℃, which also limits the processing environment of the wafer to a certain extent (a heating device capable of heating to a high temperature is required), and secondly, in order to avoid non-uniformity of an electroplated metal layer, the wafer needs to be heated to a certain temperature first and then electroplated, so that the electroplating environment of the wafer is greatly limited, and therefore, a grid disc for wafer electroplating is provided.

Disclosure of Invention

Technical problem to be solved

Aiming at the defects of the prior art, the invention provides a grid disc for wafer electroplating, which solves the technical problems that the size of a conductive ring cannot be adjusted according to the size of a wafer, the thickness of a metal layer formed by electroplating is not uniform and the electroplating environment is limited during wafer electroplating.

(II) technical scheme

In order to achieve the purpose, the invention is realized by the following technical scheme:

a grid disc for wafer electroplating comprises a grid disc for storing a wafer and used for storing electroplating solution during electroplating, wherein a conductive disc is arranged in the grid disc and used for applying an electrode to the wafer during electroplating of the wafer so that metal ions are attached to the wafer;

the grid disc is in a funnel shape (the inner wall is in a step shape), and a rotating disc (provided with an exhaust hole, similar to an air pump and generating stable negative pressure) at the bottom of the grid disc attracts the wafer A;

the conductive disc is used for supplying power to the wafer, so that the wafer is connected with an electrode of a power supply, is arranged in the grid disc and supplies power to the wafer A;

wherein, electrically conductive dish contains the power supply board, make by conducting material such as metal, and a plurality of endocentric conducting rings are installed at the top of power supply board, as shown in fig. 4, be the ring form that cup joints each other, a plurality of conducting ring sizes are all inequality (by small to big, the cover is in the same place, form like the shape shown in fig. 4), connect through the cushion between two adjacent conducting rings, when wafer and conducting ring laminating, connect the cushion and the wafer laminating between two conducting rings, cushion and wafer edge laminating this moment, prevent that the plating solution from flowing into the another side of wafer.

Preferably, the top of the conductive disc is provided with a conductive column and a vent hole, and the vent hole surrounds the edge of the conductive column, as shown in fig. 4, and the vent hole corresponds to an exhaust hole outside the rotating disc, when the exhaust hole exhausts air outwards (air between the conductive disc and the wafer is exhausted), air between the wafer and the conductive disc enters between the rotating disc and the conductive disc through the vent hole, and is finally exhausted through the exhaust hole, so that a negative pressure is formed between the wafer and the conductive disc, at this time, the wafer is attached to the conductive disc under the action of the negative pressure, and the edge of the wafer is attached to the elastic pad, as shown in fig. 7 and 8.

Preferably, the top of the power supply board is provided with an insulating sleeve (used for insulating the joint between the power supply board and the connecting ring), the insulating sleeve is inserted into the connecting ring at the bottom of the conducting ring, in a normal state, the elastic pad and the power supply board are in an inflated state, similar to an air bag, and in an expanded state, namely, the elastic pad is inflated outwards by air pressure, the conducting ring connected with the elastic pad is driven to be outwards together, so that the connecting ring at the bottom of the conducting ring is not contacted with the power supply board, at the moment, the conducting ring is in a power-off state, the wafer is not powered, only when the wafer is stressed (namely, when the conducting ring is attached to the power supply board), the power supply board supplies power to the conducting ring, and then, the conducting ring transmits voltage to the wafer, so that the wafer generates voltage.

Wherein, the wafer is placed on the conducting ring, at this moment, the exhaust hole at the top of the rotary disk outwards exhausts, so that negative pressure is formed between the conducting ring and the wafer, at this moment, the wafer moves towards the conducting ring and is tightly attached to the conducting ring, and the conducting ring is driven to move towards the power supply board, so when the conducting ring is stressed (the elastic pad is downwards extruded), the elastic pad is extruded and deformed, the connecting ring is attached to the power supply board, as shown in fig. 5, at this moment, the voltage enters the conducting ring through the power supply board, and then is conducted by the conducting ring to the wafer in contact with the conducting ring, so that the wafer has voltage. The top of the power supply board is bonded with an insulating pad which is used for insulating other positions (except the position corresponding to the connecting ring) of the power supply board, and the insulating pad is bonded with the insulating sleeve.

Preferably, an insulating pad is bonded to the top of the power supply board, and the insulating pad is bonded to the insulating sleeve.

Preferably, the conducting ring in the outside bonds through cushion and insulating pad and makes the cushion wrap up the space between conducting ring and the power supply board will be described, form inclosed gasbag structure, and the externally mounted of conducting disc has the valve inside, and the valve inside passes through the clearance intercommunication between pipeline and two adjacent conducting rings, so can control the atmospheric pressure of cushion inside air through the valve inside to the thrust that the adjustment conducting ring received (thrust is decided by the pressure of cushion inside atmospheric pressure, the inflation dynamics that is the cushion promptly).

Preferably, the grid disc is sequentially provided with an outer baffle disc, a first step and a second step from outside to inside, and the outer baffle disc, the first step and the second step are distributed in a step shape,

the second step is connected with the conductive disc, so that the height of the conductive disc is reduced, and the electroplating solution and the surface of the wafer can be conveniently mixed.

Preferably, a main pipeline is arranged inside the outer baffle disc and used for supplying electroplating solution, the main pipeline is simultaneously communicated with a circulating pipe outside the outer baffle disc and a water dividing pipe at the top of the first step, a spray head is arranged on the water dividing pipe and used for spraying the electroplating solution into the outer baffle disc,

the circulating pipe comprises a liquid supply pipe (supplying electroplating liquid to the wafer) and a liquid discharge pipe (discharging the electroplating liquid on the wafer), so that the electroplating liquid is controlled to enter the outer baffle disc in a circulating mode, and the liquid supply pipe and the liquid discharge pipe are connected with the electroplating liquid.

Preferably, the end cover made of transparent materials is installed at the top of the first step, so that the condition of electroplating inside the outer baffle disc can be conveniently observed during electroplating, and the intuitiveness of wafer electroplating is improved.

Preferably, the center of the grid plate is connected with the rotating plate, and the top of the rotating plate is provided with an exhaust hole (communicated with an exhaust pipe of an air pump and used for exhausting air at the top of the rotating plate, so that the top of the conductive plate is in a state similar to a dust collector, and the wafer can be adsorbed on the conductive plate and driven to move downwards only by placing the wafer on the conductive plate) and used for downwards attracting the wafer A, and the exhaust hole outside the rotating plate corresponds to an air vent on the conductive plate, so that negative pressure is transmitted between the wafer and the conductive plate, and the wafer is adsorbed on the conductive plate.

Preferably, the rotating disc is connected with the grid disc through threads, so that the distance between the rotating disc and the conductive disc is adjusted, the closer the rotating disc is to the wafer, the greater the suction force is received until the rotating disc is completely attached to the wafer, the vent hole in the top of the rotating disc is blocked by the wafer disc, and at the moment, the wafer is connected with the conductive disc.

(III) advantageous effects

1. The conductive disc with the conductive rings is adopted to uniformly electrify the wafer disc, so that the problem that the sizes of the conductive rings cannot be adjusted according to the sizes of the wafers during wafer electroplating is effectively solved, the applicability of the device is improved, electrodes can be uniformly applied to the wafers at the same time, metal ions can be uniformly paved on the surfaces of the wafers during electroplating, and the uniformity of a metal layer is improved;

2. the elastic pad is connected between the two conductive rings and is attached to the edge of the wafer when the wafer is clamped, so that the problem that electroplating solution is contacted with the other surface of the wafer when the wafer is electroplated is effectively solved, the single surface of the wafer is further stably electroplated, and the electroplating stability is improved;

3. the vent holes are formed in the top of the rotating disc, and the rotating disc is in threaded connection with the grid disc, so that the distance between the vent holes and the wafer is adjusted, the problem that the wafer is not tightly fixed during wafer electroplating is effectively solved, the wafer is driven to move towards the conductive disc, the tightness of the fit between the wafer and the conductive disc is improved, and the size of the suction force is adjusted by adjusting the distance between the rotating disc and the wafer;

4. because the circulation pipe is adopted to control the electroplating solution to flow into or out of the grid plate, the electroplating solution is in contact with the surface of the wafer and is driven to circulate, the problem that the electroplating environment is limited when the wafer is electroplated is effectively solved, the convenience of electroplating the wafer is improved, the wafer cannot be limited in a room or a designated place when the wafer is electroplated, and the convenience of electroplating is improved.

Drawings

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.

FIG. 1 is an overall structural view of an embodiment of the present invention;

FIG. 2 is an exploded view of the overall structure of an embodiment of the present invention;

FIG. 3 is a block diagram of a grid tray in an embodiment of the present invention;

FIG. 4 is a block diagram of a conductive plate in an embodiment of the present invention;

FIG. 5 is a partial cross-sectional view of a conductive disk in an embodiment of the present invention;

FIG. 6 is a partial cross-sectional view of a portion of an embodiment of the present invention with a grid plate and conductive plates connected;

FIG. 7 is a diagram illustrating the connection between the elastic pad and the wafer according to one embodiment of the present invention;

FIG. 8 is a second diagram of the connection between the elastic pad and the wafer in the embodiment of the present invention.

Illustration of the drawings: 100. an outer baffle disc; 101. a first step; 102. a second step; 103. rotating the disc; 104. a water diversion pipe; 105. a liquid supply tube; 106. an end cap; 200. a conductive plate; 201. conducting rings; 202. an elastic pad; 203. a conductive post; 204. an insulating sleeve; 205. an insulating pad; 206. a power supply board; 207. a connecting ring; A. and (5) a wafer.

Detailed Description

The embodiment of the application provides a grid disc for wafer electroplating, and solves the technical problems that the sizes of conducting rings cannot be adjusted according to the sizes of wafers, the thickness of a metal layer formed by electroplating is uneven and the electroplating environment is limited in the existing wafer electroplating process; because the elastic pad is connected between the two conducting rings, the elastic pad is attached to the edge of the wafer when the wafer is clamped, so that the single side of the wafer is stably electroplated, and the electroplating stability is improved; the exhaust holes are formed in the top of the rotating disc, and the rotating disc is in threaded connection with the grid disc, so that the distance between the exhaust holes and the wafer is adjusted, the wafer is driven to move towards the conductive disc, the adhesion tightness between the wafer and the conductive disc is improved, and the size of the suction force is adjusted by adjusting the distance between the rotating disc and the wafer; because the circulation pipe is adopted to control the electroplating solution to flow into or out of the grid plate, the electroplating solution is in contact with the surface of the wafer and is driven to circulate, the convenience of electroplating the wafer is improved, the wafer cannot be limited to a room or a designated place when being electroplated, and the convenience of electroplating is improved.

Example 1

In order to solve the above-mentioned problem that the size of the conductive ring 201 cannot be adjusted according to the size of the wafer and the thickness of the metal layer formed by electroplating is not uniform when the wafer is electroplated, the general idea is as follows:

aiming at the problems in the prior art, the invention provides a grid disc for wafer electroplating, which comprises a grid disc for storing a wafer A and is used for storing electroplating solution during electroplating, a conductive disc 200 is arranged in the grid disc, and the conductive disc 200 is used for applying an electrode to the wafer A during electroplating so as to enable metal ions to be attached to the wafer A;

the grid disc is in a funnel shape (the inner wall is in a step shape), and the rotating disc 103 (provided with an exhaust hole, similar to an air pump and generating stable negative pressure) at the bottom of the grid disc attracts the wafer A;

the conductive disc 200 is used for supplying power to the wafer A, enabling the wafer A to be connected with an electrode of a power supply, is arranged inside the grid disc and supplies power to the wafer A;

wherein, the conductive plate 200 includes a power supply board 206 made of conductive materials such as metal, and a plurality of concentric conducting rings 201 are installed at the top of the power supply board 206, as shown in fig. 4, the rings are sleeved with each other, the sizes of the conducting rings 201 are different (from small to large, and the conducting rings are sleeved together to form the shape shown in fig. 4), two adjacent conducting rings 201 are connected through an elastic pad 202, when the wafer a is attached to the conducting rings 201, the elastic pad 202 connected between the two conducting rings 201 is attached to the wafer a, at this time, the elastic pad 202 is attached to the edge of the wafer a, so as to prevent the electroplating solution from flowing into the other side of the wafer a.

In some examples, the conductive plate 200 is provided with a conductive pillar 203 and a vent hole on the top, and the vent hole surrounds the edge of the conductive pillar 203, as shown in fig. 4, and the vent hole corresponds to an exhaust hole outside the rotating disk 103, when the exhaust hole exhausts (exhausts the air between the conductive plate 200 and the wafer a), the air between the wafer a and the conductive plate 200 enters between the rotating disk 103 and the conductive plate 200 through the vent hole, and finally the exhaust hole exhausts, so that a negative pressure is formed between the wafer a and the conductive plate 200, at this time, the wafer a is attached to the conductive plate 200 under the action of the negative pressure, and the edge of the wafer a is attached to the elastic pad 202, as shown in fig. 7 and 8.

In some examples, an insulating sleeve 204 is disposed on the top of the power supply board 206 (for insulating a connection between the power supply board 206 and the connection ring 207), and the insulating sleeve 204 is inserted into the connection ring 207 at the bottom of the conductive ring 201, and in a normal state, the elastic pad 202 and the power supply board 206 are in an inflated state, similar to an air bag, and in an inflated state, that is, the elastic pad 202 is inflated outwards when being pressed, so as to drive the conductive ring 201 connected thereto to be outward, so that the connection ring 207 at the bottom of the conductive ring 201 is not in contact with the power supply board 206, and at this time, the conductive ring 201 is in a power-off state, and power is not supplied to the wafer a, and only when the wafer a is pressed (that is, when the conductive ring 201 is attached to the power supply board 206), the power supply to the conductive ring 201, and then the conductive ring 201 transmits a voltage to the wafer, so that the wafer generates a voltage.

At this time, the wafer is placed on the conductive ring 201, the vent hole at the top of the rotating disk 103 exhausts outwards, so that a negative pressure is formed between the conductive ring 201 and the wafer, at this time, the wafer moves towards the conductive ring 201, is tightly attached to the conductive ring 201, and drives the conductive ring 201 to move towards the power supply board 206, so that when the conductive ring 201 is stressed (the elastic pad 202 is pressed downwards), the elastic pad 202 is pressed to deform, the connection ring 207 is attached to the power supply board 206, as shown in fig. 5, at this time, a voltage enters the conductive ring 201 through the power supply board 206, and is transmitted to the wafer a in contact with the conductive ring 201, so that the wafer a has a voltage. An insulating pad 205 is bonded to the top of the power supply board 206 for insulating the power supply board 206 at other positions (except the position corresponding to the connection ring 207), and the insulating pad 205 is bonded to the insulating sleeve 204.

In some examples, the outermost conductive ring 201 is bonded to the insulating pad 205 through the elastic pad 202, so that the elastic pad 202 wraps up a gap between the conductive ring 201 and the power supply board 206 to form a closed airbag structure, and a valve core is mounted outside the conductive disc 200 and is communicated with a gap between two adjacent conductive rings 201 through a pipeline, so that air pressure of air inside the elastic pad 202 can be controlled through the valve core, and thus thrust received by the conductive ring 201 (the thrust is determined by pressure of the air pressure inside the elastic pad 202, namely, expansion force of the elastic pad 202) is adjusted.

In some examples, the grid disc is provided with an outer baffle disc 100, a first step 101 and a second step 102 from outside to inside, and the outer baffle disc 100, the first step 101 and the second step 102 are distributed in a step shape,

wherein the second step 102 is connected to the conductive pad 200, thereby lowering the height of the conductive pad 200 to facilitate subsequent mixing of the plating solution with the wafer surface.

In some examples, the rotating disk 103 is connected to the center of the mesh disk, and the top of the rotating disk 103 is provided with an air outlet (which is communicated with an air outlet pipe of an air pump and used for exhausting air at the top of the rotating disk 103, so that the top of the conductive disk 200 is in a state similar to a dust collector, and the wafer is adsorbed onto the conductive disk 200 and is driven to move downwards only by placing the wafer onto the conductive disk 200) for attracting the wafer a downwards, and the air outlet on the outer portion of the rotating disk 103 corresponds to the air outlet on the conductive disk 200, so that negative pressure is transmitted between the wafer and the conductive disk 200, so that the wafer is adsorbed onto the conductive disk 200. The rotating disk 103 is connected with the grid disk through threads, so that the distance between the rotating disk 103 and the conductive disk 200 is adjusted, the closer the rotating disk 103 is to the wafer, the greater the suction force is received until the rotating disk 103 is completely attached to the wafer, the vent hole at the top of the rotating disk 103 is blocked by the wafer disk A, and at the moment, the wafer is connected with the conductive disk 200.

When the wafer a is fixed, the air pump is started (the air suction pipe of the air pump is communicated with the air vent on the top of the rotating disk 103), so that the air pump exhausts the air between the rotating disk 103 and the conductive disk 200 (so that a negative pressure is formed between the rotating disk 103 and the conductive disk 200), at this time, the air between the conductive disk 200 and the wafer a is exhausted through the air vent, so that a negative pressure is formed between the wafer a and the conductive disk 200, when the wafer a is placed on the conductive disk 200, the wafer a is attached to the conductive disk 200 under the action of the negative pressure, the edge of the wafer a is attached to the elastic pad 202 (the elastic pad 202 between the conductive rings 201 is in a state of being expanded outwards all the time under the action of the air pressure), and therefore, the elastic pad 202 is attached to the edge of the wafer a, so that the plating solution cannot enter the other side of the wafer a, and the wafer a can be classified as shown in fig. 7 and fig. 8 according to the elasticity of the air bag of the elastic pad 202.

When the wafer a is forced to move downwards, the conductive ring 201 moves downwards under the pressure of the wafer a, as shown in fig. 5, the connection ring 207 at the bottom of the conductive ring 201 is attached to the top of the power supply board 206, at this time, the voltage is transmitted to the conductive ring 201 through the power supply board 206, and then transmitted to the wafer a by the conductive ring 201, so that the wafer a is fixed, meanwhile, the conductive disc 200 with the plurality of conductive rings 201 is adopted to uniformly electrify the wafer a, so that the applicability of the device is improved (the device can be used with wafers a of different sizes or specifications), and meanwhile, an electrode can be uniformly applied to the wafer (the conductive rings 201 with different diameters or specifications supply power to the wafer a, so that the voltage on the surface of the wafer a is stably distributed), so that metal ions can be uniformly laid on the surface of the wafer during electroplating, the uniformity of the metal layer is improved, and the situation that the wafer (made of silicon material, silicon is one of semiconductor material, has poor conductivity, but weak) and the metal layer (metal layer near the electrical connection end is separated out is thicker and the metal layer is farther away (the metal layer) is generated.

Example 2

Based on embodiment 1, in order to ensure that the device maintains stable shape when folded or unfolded, the general idea is as follows:

a main pipeline is arranged inside the outer baffle disc 100 and used for supplying electroplating solution, the main pipeline is simultaneously communicated with a circulating pipe outside the outer baffle disc 100 and a water dividing pipe 104 at the top of the first step 101, a spray head is arranged on the water dividing pipe 104 and used for spraying the electroplating solution into the outer baffle disc 100,

the circulation pipe includes a supply pipe 105 (for supplying the plating solution to the wafer a) and a drain pipe (for draining the plating solution from the wafer a), so that the plating solution is circularly controlled to enter the outer tray 100, and the supply pipe 105 and the drain pipe are both connected to the plating solution.

In some examples, the end cap 106 made of transparent material is installed on the top of the first step 101, so that the electroplating inside the outer baffle plate 100 can be conveniently observed during electroplating, and the intuitiveness of electroplating the wafer a is improved.

Because adopt the circulating pipe control plating solution to flow in or flow out the grid dish for the surface contact of plating solution and wafer drives the plating solution simultaneously and circulates, so, effectively solved when the wafer is electroplated, electroplate the restricted problem of environment, and then improve the convenience that the wafer was electroplated, make the wafer when electroplating, can not confine to indoor or appointed place etc. (need not to use special electroplating device cooperation to use), thereby improve the convenience of electroplating.

Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims

1. A grid plate for wafer electroplating, comprising:

a grid plate which is sucked with the wafer (A);

the conductive disc (200) is arranged inside the grid disc and used for supplying power to the wafer (A);

the conductive disc (200) comprises a power supply board (206), a plurality of concentric conductive rings (201) are mounted at the top of the power supply board (206), the sizes of the conductive rings (201) are different, and two adjacent conductive rings (201) are connected through an elastic pad (202).

2. A grid plate for electroplating a wafer as recited in claim 1, wherein: the top of the conductive disc (200) is provided with a conductive column (203) and a vent hole, and the vent hole surrounds the edge of the conductive column (203).

3. A grid plate for electroplating a wafer as recited in claim 1, wherein: the top of the power supply board (206) is provided with an insulating sleeve (204), the insulating sleeve (204) is inserted with a connecting ring (207) at the bottom of the conducting ring (201),

when the conductive ring (201) is stressed, the connecting ring (207) is attached to the power supply board (206).

4. A grid plate for electroplating a wafer as set forth in claim 3, wherein: an insulating pad (205) is bonded to the top of the power supply plate (206), and the insulating pad (205) is bonded to the insulating sleeve (204).

5. A grid plate for electroplating a wafer as set forth in claim 4, wherein: the outermost conductive ring (201) is bonded with the insulating pad (205) through the elastic pad (202), a valve core is mounted outside the conductive disc (200), and the valve core is communicated with a gap between two adjacent conductive rings (201) through a pipeline.

6. A grid plate for electroplating a wafer as recited in claim 1, wherein: the grid disc is sequentially provided with an outer baffle disc (100), a first ladder (101) and a second ladder (102) from outside to inside, the outer baffle disc (100), the first ladder (101) and the second ladder (102) are distributed in a ladder shape,

wherein the second step (102) is connected to the electrically conductive disc (200).

7. A grid plate for electroplating a wafer as set forth in claim 6, wherein: a main pipeline is arranged in the outer baffle disc (100), and is simultaneously communicated with a circulating pipe outside the outer baffle disc (100) and a water dividing pipe (104) at the top of the first step (101),

wherein, the circulating pipe comprises a liquid supply pipe (105) and a liquid discharge pipe, and the liquid supply pipe (105) and the liquid discharge pipe are both connected with the electroplating solution.

8. A grid plate for electroplating a wafer as set forth in claim 6, wherein: an end cover (106) made of transparent materials is installed at the top of the first step (101).

9. A grid plate for electroplating a wafer as set forth in claim 2, wherein: the center of the grid plate is connected with a rotating plate (103), the top of the rotating plate (103) is provided with an exhaust hole for downwards attracting the wafer (A), and the exhaust hole outside the rotating plate (103) corresponds to the vent hole on the conductive plate (200).

10. A grid plate for electroplating a wafer as recited in claim 9, wherein: the rotating disc (103) is connected with the grid disc through threads.