Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a method for purifying and preparing implantation-grade polyether-ether-ketone by using a subcritical technology;
in order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a subcritical technological purification method for preparing implantation-grade polyetheretherketone comprises the steps of soaking PEEK coarse powder (pure PEEK coarse powder generally refers to industrial-grade sheet polyetheretherketone with the size of 2-5 mm) in subcritical acid to obtain an intermediate product, and soaking the intermediate product in subcritical pure water, wherein the acid is acetic acid, formic acid, oxalic acid, amino acid or hydroxy acid.
As a preferred technical scheme:
the method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology is characterized in that the acid is degassed acetic acid; the pure water is degassed pure water.
In the method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology, the subcritical acetic acid is acetic acid at the temperature of 117.9-321.6 ℃ and the pressure of 1 atm-5.78 MPa; the subcritical pure water is pure water at a temperature of 100 to 330 ℃ and a pressure of 1atm to 12.9 MPa.
The method for purifying and preparing the implant-grade polyetheretherketone by using the subcritical technology comprises the following steps of (1) purifying and preparing subcritical acetic acid at the temperature of 130-300 ℃ and the pressure of 0.144 kPa-4.18 MPa; the subcritical pure water is pure water at a temperature of 150 to 310 ℃ and a pressure of 0.48 to 9.86 MPa.
The method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology comprises the following steps of preparing acetic acid in a subcritical state at the temperature of 250-290 ℃ and the pressure of 1.74-3.46 MPa; the subcritical pure water is pure water at a temperature of 250 to 290 ℃ and a pressure of 3.97 to 7.44 MPa.
The method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology has the advantages that the average particle size of PEEK coarse powder is 15 mu m-5 mm, the melt index (400 ℃,2.16 kg) is 3-20 g/10min, and the porosity is 70-75%; the mass ratio of the PEEK coarse powder to the acid is 1; the mass ratio of the PEEK coarse powder to the pure water is 1; the time of each soaking treatment is 20 min-2 h.
In the method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology, glucose is added into the subcritical acid while the PEEK coarse powder is placed into the subcritical acid; the adding amount of the glucose is 5 to 20 percent of the mass of the acid.
The method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology comprises the following steps of putting the intermediate product into pure water in a subcritical state, and adding glucose into the pure water in the subcritical state; the adding amount of the glucose is 5-20% of the mass of the pure water.
A method for purifying and preparing implantation-grade polyetheretherketone by using the subcritical technology is described above, and the glucose is degassed glucose.
According to the method for purifying and preparing the implantation-grade polyetheretherketone by the subcritical technology, after the intermediate product is soaked in pure water in a subcritical state, the polyetheretherketone reaches a medical implantation-grade level, namely the content of heavy metals (Ag, as, bi, cd, cu, hg, mo, pb, sb and Sn) is less than 100ppm calculated As Pb, and the test of the United states pharmacopoeia 233 is carried out.
The principle of the invention is as follows:
after exposing the PEEK meal to subcritical acids (acetic, formic, oxalic, amino or hydroxy acids), the acids act as proton buffers providing stable H + Supplied to facilitate leaching of heavy metals and their ions, due to H + Can be rapidly consumed as the reaction proceeds, and can be coordinated with metal ions to promote the transfer of heavy metal ions from the solid phase to the aqueous phase. Due to the relatively large ionization equilibrium constant of the acid, in H + During the process of continuous consumption to attack metal and its oxide, the shift of equilibrium will provide H + Is continuously supplied. At the same time, the acid anion will form a stable complex with the metal cation by coordination, thereby promoting dissolution of the metal and its oxides. The valuable metal ion reacts with CH under subcritical condition 3 COO coordinates form a stable complex. Thus, the subcritical state contributes to a significant enhancement of the coordination between the metal cation and the acid anion. In the normal state of the process, the process is carried out,due to the surface tension of acid (water), the acid cannot efficiently enter the pores of the polyetheretherketone to be combined with metal ions to form a complex, or the water cannot efficiently enter the pores of the polyetheretherketone to carry the complex out.
The reduced metal ions will exhibit a higher solubility with the addition of glucose, thereby facilitating leaching of the metal into the aqueous phase. The superior leaching performance may be related to the reducibility of the aldehyde function in the glucose. The action of glucose as a reducing agent helps to improve the leaching effect.
During the reaction process, glucose is gradually oxidized into polyhydroxy acids, aldonic acids, tartaric acid, oxalic acid and formic acid, and finally, the polyhydroxy acids, the aldonic acids, the tartaric acid, the oxalic acid and the formic acid are completely converted into carbon dioxide and water. Most of the acid can coordinate strongly with the metal cation to form a stable and highly soluble metal-organic complex, which significantly facilitates leaching.
Heavy metal ion and CH under subcritical acid condition 3 COO coordination forms a stable water-soluble complex to be removed, subcritical water has the function of washing away residual acid, and because subcritical water has strong penetrating power and dissolution performance, residual water-soluble complex can be taken out, and the purpose of purification is achieved.
The invention creatively utilizes heavy metal ions and CH under subcritical conditions 3 COO coordinates to form a stable water-soluble complex to remove heavy metal ions, and the method for removing heavy metal ions by adopting a subcritical technology in the prior art is essentially different from the method for removing heavy metal ions by firstly removing organic matters on the surface of heavy metal and oxidizing heavy metal by using a subcritical water technology and then removing heavy metal ions by using metal replacement reaction or electrokinetic reaction.
Advantageous effects
(1) The method for purifying and preparing the implant-grade polyetheretherketone by the subcritical technology can effectively remove heavy metals in the polyetheretherketone on the basis of not damaging the microporous structure of polyetheretherketone coarse powder.
(2) Compared with the subcritical technology in the prior art, the method has the advantages of simple equipment, short treatment time and no or little pollution of the solvent to the environment.
Detailed Description
The invention will be further illustrated with reference to specific embodiments. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims.
The experimental procedures in the following examples, unless otherwise indicated, are conventional and are carried out according to the techniques or conditions described in the literature in the field or according to the instructions of the products. Materials, reagents and the like used in the following examples are commercially available unless otherwise specified.
The specifications of the relevant substances in the examples and comparative examples are as follows:
pure water: the conductivity is less than 8 mu S/cm, the product is self-made and needs to be subjected to degassing treatment before use;
glucose: medical grade, requiring degassing treatment before use.
The detection method of the metal residue of the polyether-ether-ketone prepared in the examples and the comparative examples comprises the following steps: the test was performed with reference to the United states Pharmacopeia 233.
Example 1
A method for purifying and preparing implantation-grade polyether-ether-ketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (manufactured by Taketai far east Fine chemical Co., ltd., purity of 99.5%);
pure water: degassing pure water;
(2) Soaking PEEK coarse powder in acid at 250 deg.C and 1.74MPa for 60min to obtain intermediate product; wherein the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking the intermediate product prepared in the step (2) in pure water at the temperature of 250 ℃ and the pressure of 3.97MPa for 60min to obtain the medical implantation-grade polyether-ether-ketone; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Comparative example 1
A method for purifying polyether-ether-ketone comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (manufactured by Taketai far east Fine chemical Co., ltd., purity of 99.5%);
pure water: degassing pure water;
(2) Soaking PEEK coarse powder in acid at 100 deg.C and normal pressure (one standard atmospheric pressure) for 60min to obtain intermediate product; wherein the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking the intermediate product prepared in the step (2) in pure water at 100 ℃ and normal pressure (one standard atmospheric pressure) for 60min; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 2
A method for purifying and preparing implantation-grade polyether-ether-ketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (manufactured by Taketai far east Fine chemical Co., ltd., purity of 99.5%);
pure water: degassing pure water;
(2) Soaking the PEEK coarse powder in acid at 270 ℃ and 2.32MPa for 60min to obtain an intermediate product; wherein the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking the intermediate product prepared in the step (2) in pure water at the temperature of 270 ℃ and the pressure of 5.5MPa for 60min to obtain the medical implantation-level polyether-ether-ketone; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 3
A method for purifying and preparing implant-grade polyetheretherketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (99.5% purity, manufactured by Yantai far east Fine chemical Co., ltd.);
pure water: degassing pure water;
(2) Soaking PEEK coarse powder in acid at 290 deg.C and 3.46MPa for 60min to obtain intermediate product; wherein the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 60min to obtain the medical implantation-level polyether-ether-ketone; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Comparative example 2
A process for purifying polyetheretherketone substantially as in example 3, except that step (3) comprises: and (3) soaking the intermediate product prepared in the step (2) in pure water at the temperature of 100 ℃ and under the normal pressure (one standard atmospheric pressure) for 60min.
Comparative example 3
A process for purifying polyetheretherketone substantially as in example 3, except that step (2) comprises: soaking PEEK coarse powder in acid at 100 deg.C and normal pressure (one standard atmospheric pressure) for 60min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1.
Example 4
A method for purifying and preparing implantation-grade polyether-ether-ketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (99.5% purity, manufactured by Yantai far east Fine chemical Co., ltd.);
pure water: degassing pure water;
(2) Soaking the PEEK coarse powder in acid at 290 ℃ and 3.46MPa for 90min to obtain an intermediate product; wherein the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 90min to obtain the medical implantation-level polyether-ether-ketone; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 5
A method for purifying and preparing implantation-grade polyether-ether-ketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (99.5% purity, manufactured by Yantai far east Fine chemical Co., ltd.);
pure water: degassing pure water;
(2) Soaking the PEEK coarse powder in acid at 290 ℃ and 3.46MPa for 120min to obtain an intermediate product; wherein the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 120min to obtain the medical implantation-level polyether-ether-ketone; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 6
A method for purifying and preparing implant-grade polyetheretherketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (99.5% purity, manufactured by Yantai far east Fine chemical Co., ltd.);
glucose: de-aerated glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 290 deg.C and 3.46MPa for 90min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 90min to obtain the medical implantation-level polyether-ether-ketone; wherein, the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 7
A method for purifying and preparing implant-grade polyetheretherketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (99.5% purity, manufactured by Yantai far east Fine chemical Co., ltd.);
glucose: de-aerated glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 290 deg.C and 3.46MPa for 90min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 90min to obtain the medical implantation-level polyether-ether-ketone; wherein, the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 8
A method for purifying and preparing implantation-grade polyether-ether-ketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (manufactured by Taketai far east Fine chemical Co., ltd., purity of 99.5%);
glucose: degassing the glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 290 deg.C and 3.46MPa for 90min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 90min to obtain the polyether-ether-ketone reaching the medical implantation level; wherein the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 9
A method for purifying and preparing implant-grade polyetheretherketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: degassed acetic acid (99.5% purity, manufactured by Yantai far east Fine chemical Co., ltd.);
glucose: de-aerated glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 290 deg.C and 3.46MPa for 120min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 120min to obtain the medical implantation-level polyether-ether-ketone; wherein, the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 10
A method for purifying and preparing implant-grade polyetheretherketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: formic acid (manufacturer sahn chemical technology (shanghai) ltd, purity 99.5%);
glucose: degassing the glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 215 deg.C and 2.43MPa for 30min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 30min to obtain the medical implantation-level polyether-ether-ketone; wherein, the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 11
A method for purifying and preparing implant-grade polyetheretherketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: oxalic acid (manufactured by saen chemical technology (shanghai) ltd., purity 98%);
glucose: de-aerated glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 290 deg.C and 1.76MPa for 20min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 20min to obtain the medical implantation-level polyether-ether-ketone; wherein, the mass ratio of the PEEK coarse powder to the pure water is 1.
Example 12
A method for purifying and preparing implantation-grade polyether-ether-ketone by a subcritical technology comprises the following specific steps:
(1) Preparing raw materials:
PEEK coarse powder: the manufacturer is Shandong Junhao high performance polymer Co., ltd, and the mark is 5600P;
acid: amino acid (manufactured by Shandong Jingyun food ingredient Co., ltd., purity 98.5%);
glucose: de-aerated glucose;
pure water: degassing pure water;
(2) Soaking glucose and PEEK coarse powder in acid at 290 deg.C and 3.46MPa for 100min to obtain intermediate product; wherein, the mass ratio of the PEEK coarse powder to the acid is 1;
(3) Soaking glucose and the intermediate product prepared in the step (2) in pure water at 290 ℃ and 7.44MPa for 100min to obtain the medical implantation-level polyether-ether-ketone; wherein, the mass ratio of the PEEK coarse powder to the pure water is 1.
The polyether ether ketones obtained in the examples and comparative examples have the diphenyl sulfone residues and heavy metal residues shown in table 1 below (n.d. represents no detection, or below the detection limit of the instrument):
TABLE 1
It is seen from the data in table 1 that, in comparative example 1, there are still more residues of diphenyl sulfone and heavy metal of peek prepared in example 1, because acetic acid molecules are combined into a dimer (also called a di-associate) with a larger molecular volume through hydrogen bonds, and both the common acetic acid and the common pure water have larger surface tension, so that the acetic acid cannot efficiently enter the pores of peek to combine with metal ions to form a complex, and the pure water cannot efficiently enter the pores of peek to carry out the complex, therefore, the removal effect of diphenyl sulfone and heavy metal of the common acetic acid plus common pure water is worse than that of subcritical acetic acid plus subcritical water.
Compared with the polyether-ether-ketone prepared in the embodiment 3, the diphenyl sulfone and the heavy metal of the polyether-ether-ketone prepared in the embodiment 2 still have more residues, because most of the complex formed by combining acetic acid and metal ions (also called coordination reaction) is a multivalent ligand with larger molecular volume, and common pure water has large surface tension and cannot efficiently enter the pores of the polyether-ether-ketone to carry out the complex; therefore, the removal effect of diphenyl sulfone and heavy metals of subcritical acetic acid plus ordinary pure water is inferior to that of subcritical acetic acid plus subcritical water.
Compared with the polyether-ether-ketone prepared in the embodiment 3, the diphenyl sulfone and heavy metal of the polyether-ether-ketone prepared in the embodiment 3 still have more residues, because acetic acid molecules are combined into a dimer (also called a di-associate) with a larger molecular volume through hydrogen bonds, and the surface tension of common acetic acid is larger, so that the acetic acid cannot efficiently enter polyether-ether-ketone pores to be combined with metal ions to form a complex; therefore, the removal effect of diphenyl sulfone and heavy metals of ordinary acetic acid plus subcritical water is inferior to that of subcritical acetic acid plus subcritical water.
Meanwhile, the experimental results in the table also show that: the cleaner the solvent and the metal ions are removed along with the increase of the purification temperature or the prolonging of the purification time; the addition of glucose can further improve the removal efficiency of the solvent and metal ions; the method can effectively remove the solvent and metal ions in the PEEK, and the purified PEEK resin reaches the medical implantation level.
The present invention has been described in detail above. It will be apparent to those skilled in the art that the invention can be practiced within a wide range of equivalent parameters, concentrations, and conditions without departing from the spirit and scope of the invention and without undue experimentation. While the invention has been described with reference to specific embodiments, it will be appreciated that the invention can be further modified. In general, this application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains.