CN115799076B - Wafer system micro-channel manufacturing method capable of measuring flow velocity, pressure and temperature - Google Patents
Wafer system micro-channel manufacturing method capable of measuring flow velocity, pressure and temperature Download PDFInfo
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Abstract
The invention discloses a manufacturing method of a wafer system micro-channel capable of measuring flow velocity, pressure and temperature, which comprises the following steps: a liquid sensing measurement element manufacturing step: respectively depositing a temperature sensing unit, a flow rate sensing unit, a pressure sensing unit and corresponding horizontal leads in a micro-channel on a silicon wafer; and (3) a film deposition step: sequentially growing a sacrificial layer and a silicon dioxide layer on the silicon wafer; a signal extraction step: growing a vertical lead, and leading the temperature sensing unit, the flow rate sensing unit and the pressure sensing unit on the silicon wafer to the outside through the horizontal lead and the vertical lead; selectively releasing the sacrificial layer: and selectively removing the sacrificial layer by using a laser selective heating or wet etching method to form a micro-channel. The method can manufacture a closed pipeline for the cooling liquid to flow horizontally without bonding with an additional silicon chip or glass sheet, and can monitor physical parameters such as temperature, flow rate, pressure and the like of the cooling liquid in real time.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a manufacturing method of a wafer system micro-channel capable of measuring flow velocity, pressure and temperature.
Background
Along with the development of 'moore' and the bottleneck, people do not simply rely on the scaling down of transistor sizes to improve the integration level of integrated circuits, but adopt advanced packaging technology represented by 2.5D/3D integration to further improve the performance of chips. However, the high density stacking of multiple chips in the three-dimensional vertical direction brings about serious heat dissipation problems, especially, the chips located inside the three-dimensional stacked structure cannot directly dissipate heat through an external heat dissipation device, and the chips are arranged on the upper and lower sides, so that normal operation is seriously affected.
In order to dissipate heat of chips in a three-dimensional integrated system, people begin to embed micro-channel structures in the three-dimensional integrated system, and heat generated by the operation of the chips is taken away by flowing cooling liquid. The common practice of the embedded micro-channel is to bond the chip with a silicon wafer or a glass sheet etched with micro-channel patterns, and the bottom of the chip and the micro-channel form a closed pipeline capable of enabling the cooling liquid to flow in the horizontal direction. This approach not only requires a specialized bonding step, but the bonding of the chip to additional silicon or glass sheets with microchannels also increases the thickness of the overall structure.
The invention provides a method for manufacturing a micro-channel capable of measuring flow velocity, pressure and temperature based on a method for selectively releasing a sacrificial layer by laser, which is used for radiating heat of a three-dimensional integrated system, wherein a closed pipeline for cooling liquid to flow in the horizontal direction can be manufactured without bonding with an additional silicon chip or glass sheet, and the micro-channel has the function of measuring the flow velocity of the cooling liquid and can monitor the physical parameters such as the temperature, the flow velocity, the pressure and the like of the cooling liquid in real time.
Disclosure of Invention
The embodiment of the application aims to provide a manufacturing method of a wafer system micro-channel capable of measuring flow velocity, pressure and temperature, wherein a closed pipeline for cooling liquid to flow in the horizontal direction can be manufactured without bonding with an additional silicon wafer or a glass sheet, and the micro-channel has the function of measuring the flow velocity of the cooling liquid, and can monitor the physical parameters such as the temperature, the flow velocity and the pressure of the cooling liquid in real time.
According to a first aspect of an embodiment of the present application, a method for manufacturing a micro-fluidic channel of a wafer system capable of measuring a flow rate, a pressure and a temperature is provided, including:
a liquid sensing measurement element manufacturing step: respectively depositing a temperature sensing unit, a flow rate sensing unit, a pressure sensing unit and corresponding horizontal leads in a micro-channel on a silicon wafer;
and (3) a film deposition step: sequentially growing a sacrificial layer and a silicon dioxide layer on the silicon wafer;
a signal extraction step: growing a vertical lead, and leading the temperature sensing unit, the flow rate sensing unit and the pressure sensing unit on the silicon wafer to the outside through the horizontal lead and the vertical lead;
selectively releasing the sacrificial layer: and selectively removing the sacrificial layer by using a laser selective heating or wet etching method to form a micro-channel.
Further, the liquid sensing measurement element manufacturing step includes:
titanium/platinum is deposited on the surface of the silicon wafer and used as the temperature sensing unit, and chromium/gold is deposited to form a first lower polar plate and a corresponding horizontal lead of the flow rate sensing unit, a second lower polar plate and a corresponding horizontal lead of the pressure sensing unit and a corresponding horizontal lead of the temperature sensing unit.
Further, the thin film deposition step includes:
and growing an organic polymer layer on the silicon wafer as a sacrificial layer, wherein the material of the sacrificial layer is selected from SU8, polyimide and BCB, and growing a silicon dioxide layer by using an ion-enhanced chemical vapor deposition method.
Further, the signal extraction step includes:
and etching the silicon dioxide layer and the organic polymer layer to form a vertical lead hole, growing a vertical lead in the vertical lead hole by using electroplated copper, leading the first lower polar plate of the temperature sensing unit, the first lower polar plate of the flow rate sensing unit and the second lower polar plate of the pressure sensing unit to the outer side through the horizontal lead and the vertical lead, and growing a chromium/gold bonding pad.
Further, the step of selectively releasing the sacrificial layer is to locally remove the sacrificial layer by using a laser heating or wet etching method to form a microfluidic channel for flowing cooling liquid.
Further, when laser heating is adopted, the selective release sacrificial layer comprises:
etching a release hole, placing the silicon wafer on a laser heating platform capable of moving in three dimensions, selectively heating locally by using a light spot of laser through the silicon dioxide layer to remove the sacrificial layer to form a micro-channel, growing a first upper polar plate of the flow rate sensing unit and a second upper polar plate of the pressure sensing unit on the surface of the silicon dioxide layer, and etching the silicon dioxide layer to form a mechanical sensitive structure.
Further, when wet etching is adopted, the selective release sacrificial layer comprises:
etching a release hole, growing a side wall protection layer on the outer side wall of the release hole, patterning, removing the sacrificial layer which is not protected by the protection layer on the inner side of the release hole by using a selective corrosive liquid to form a micro-channel, growing a first upper polar plate of the flow rate sensing unit and a second upper polar plate of the pressure sensing unit on the surface of the silicon dioxide layer, and etching the silicon dioxide layer to form a mechanical sensitive structure.
Further, the mechanical sensitive structure is a mechanical structure which generates elastic deformation under the flowing of microfluid and is a cantilever beam, a folding beam-flat plate, a film with holes or a folding beam-comb tooth structure.
Further, before the step of selectively releasing the sacrificial layer, a step of constructing a vibration compensation structure is further included: and manufacturing a parallel plate capacitor with the same mechanical sensitive structure in a non-micro flow channel area on the silicon wafer.
According to a second aspect of embodiments of the present application, there is provided an application of the wafer system micro-fluidic channel with measurable flow rate, pressure and temperature manufactured according to the method of the first aspect, to prepare a silicon wafer interposer with a silicon vertical through hole or a redistribution layer for three-dimensional vertical stacking integration of multi-layer integrated circuit chips or wafers.
The technical scheme provided by the embodiment of the application can comprise the following beneficial effects:
according to the embodiment, the microfluidic channel can be manufactured directly on the back of the silicon wafer, the preparation of a micro-channel on other silicon wafers or glass sheets is not needed, and then the silicon-silicon bonding or the silicon-glass bonding is performed, so that the process difficulty is reduced, and the overall thickness of the chip is not increased remarkably; the capacitive temperature sensing unit, the flow velocity sensing unit and the pressure sensing unit are integrated in the micro-flow channel through the ingenious process method, so that the flow velocity, the temperature and the wall pressure of the micro-flow channel of the cooling liquid in the micro-flow channel in the three-dimensional integrated structure can be monitored in real time.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
Fig. 1 is a flowchart illustrating a method for fabricating a micro flow channel of a wafer system based on a measurable flow rate, pressure and temperature of a laser heating release sacrificial layer according to an exemplary embodiment, wherein (a) in fig. 1- (j) in fig. 1 are schematic structural diagrams of each flow in the method for fabricating a micro flow channel of a wafer system based on a measurable flow rate, pressure and temperature of a laser heating release sacrificial layer;
fig. 2 is a flow chart illustrating a method for fabricating a wafer system micro-fluidic channel based on a measurable flow rate, pressure and temperature of a wet etching release sacrificial layer according to an exemplary embodiment, wherein (a) in fig. 2- (d) in fig. 2 are schematic structural diagrams of each flow in the wafer system micro-fluidic channel fabrication method based on a measurable flow rate, pressure and temperature of a wet etching release sacrificial layer;
FIG. 3 is a schematic diagram illustrating a laser heated release sacrificial layer according to an example embodiment;
FIG. 4 is a schematic diagram showing the internal structure of a micro flow channel capable of measuring flow rate and pressure according to an exemplary embodiment;
FIG. 5 is a top view of a fluidic channel showing measurable flow rate, pressure and temperature according to an exemplary embodiment;
FIG. 6 is a schematic diagram of a vibration compensation structure shown according to an exemplary embodiment; fig. 7 illustrates one embodiment of a fluidic channel capable of measuring flow rate, pressure and temperature in a three-dimensional integrated application area according to an exemplary embodiment.
In the figure: 1. a silicon wafer; 2. a temperature sensing unit; 3. a horizontal lead; 4. a first lower plate; 5. an organic polymer layer; 6. a silicon dioxide layer; 7. a vertical lead hole; 8. a vertical lead; 9. a release hole; 10. a microchannel; 11. a first upper plate; 12. a mechanically sensitive structure; 13. a cooling liquid inlet and outlet hole; 14. a protective layer; 15. a case; 16. a laser; 17. a lens; 18. a laser heating platform; 19. a second lower plate; 20. a second upper plate; 21. a vibration compensation structure; 22. an integrated circuit chip; 23. a micro bump; 24. a rewiring layer; 25. and a silicon vertical through hole.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present application.
The terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used in this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, a first message may also be referred to as a second message, and similarly, a second message may also be referred to as a first message, without departing from the scope of the present application. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "responsive to a determination", depending on the context.
The embodiment of the application provides a wafer system micro-channel manufacturing method capable of measuring flow rate, pressure and temperature, which can comprise the following steps:
a liquid sensing measurement element manufacturing step: respectively depositing a temperature sensing unit 2, a flow rate sensing unit, a pressure sensing unit and corresponding horizontal leads 3 in a micro-channel 10 on a silicon wafer 1;
and (3) a film deposition step: a sacrificial layer and a silicon dioxide layer 6 are sequentially grown on the silicon wafer 1;
a signal extraction step: growing a vertical lead 8, and leading the temperature sensing unit 2, the flow rate sensing unit and the pressure sensing unit on the silicon wafer 1 to the outside through the horizontal lead 3 and the vertical lead 8;
selectively releasing the sacrificial layer: the sacrificial layer is selectively removed by a laser selective heating or wet etching method to form a closed pipeline.
As can be seen from the above embodiments, the present application can directly manufacture a microfluidic channel on the back of the silicon wafer 1, without preparing the micro-channel 10 on other silicon wafers or glass sheets, and then performing silicon-silicon bonding or silicon-glass bonding, thereby not only reducing the process difficulty, but also not significantly increasing the overall thickness of the chip; the capacitive temperature sensing unit 2, the flow velocity sensing unit and the pressure sensing unit are integrated in the micro-channel 10 through a smart process method, so that the flow velocity and the temperature of cooling liquid in the micro-channel 10 and the wall pressure of the micro-channel 10 in the three-dimensional integrated structure can be monitored in real time.
Embodiments of the present application are described below with reference to fig. 1 and 2.
(1) In the specific implementation of the liquid sensing measurement element manufacturing step, a temperature sensing unit 2, a flow rate sensing unit, a pressure sensing unit and corresponding horizontal leads 3 are respectively deposited in a micro flow channel 10 on a silicon wafer 1;
in particular, the liquid sensing measurement element manufacturing step may comprise: titanium/platinum is deposited on the surface of the silicon wafer 1 as the temperature sensing unit 2, and chromium/gold is deposited to form a first lower plate 4 and a corresponding horizontal lead 3 of the flow rate sensing unit, a second lower plate 19 and a corresponding horizontal lead 3 of the pressure sensing unit, and a horizontal lead 3 corresponding to the temperature sensing unit 2.
In the implementation, the micro flow channel 10 is fabricated starting with the silicon wafer 1 as the substrate (fig. 1 (a)), where the silicon wafer 1 may be the back side of the active integrated circuit, or the back side of the interposer of the silicon wafer 1 where the silicon vertical via 25 (TSV) and the redistribution layer 24 (RDL) have been fabricated. Titanium/platinum is preferably sputter-grown in the horizontal direction as a temperature sensing unit 2 for measuring the temperature of the cooling liquid. Preferably, chromium/gold is sputtered to form the horizontal lead 3 of the temperature sensing unit 2, the first lower plate 4 and the corresponding horizontal lead 3 of the capacitive liquid flow meter, and the second lower plate 19 and the corresponding horizontal lead 3 of the pressure sensing unit, respectively (b) in fig. 1).
(2) In the specific implementation of the thin film deposition step, a sacrificial layer and a silicon dioxide layer 6 are sequentially grown on the silicon wafer 1;
specifically, the thin film deposition step may include: an organic polymer layer 5 is grown on the silicon wafer 1 as a sacrificial layer, the material of the sacrificial layer is selected from SU8, polyimide and BCB, and a silicon dioxide layer 6 is grown by an ion-enhanced chemical vapor deposition method.
In a specific implementation, the organic polymer layer 5 is preferably formed on the surface of the silicon wafer 1 by spin coating or spray coating SU8, polyimide, BCB, or the like as a sacrificial layer, and the silicon dioxide layer is deposited on the surface at a low temperature ((c) in fig. 1), preferably by Plasma Enhanced Chemical Vapor Deposition (PECVD).
(3) In the specific implementation of the signal extraction step, a vertical lead 8 is grown, and the temperature sensing unit 2, the flow rate sensing unit and the pressure sensing unit on the silicon wafer 1 are led to the outside through the horizontal lead 3 and the vertical lead 8;
specifically, the signal extraction step may include: the silicon dioxide layer 6 and the organic polymer layer 5 are etched to form a vertical lead hole 7, a vertical lead 8 is grown in the vertical lead hole 7 by using electroplated copper, and the temperature sensing unit 2, the first lower plate 4 of the flow rate sensing unit, and the second lower plate 19 of the pressure sensing unit are led to the outside through the horizontal lead 3 and the vertical lead 8 and a chromium/gold pad is grown.
In a specific implementation, the lithographically etching of the silicon dioxide layer and the sacrificial layer forms a platinum resistor (i.e., temperature sensing element 2) and a vertical lead hole 7 of the first lower plate 4 of the capacitive, i.e., flow rate sensing element, the second lower plate 19 of the pressure sensing element ((d) in fig. 1). A preferred method of electroplating copper grows vertical leads 8 in the vertical lead holes 7 and chromium/gold pads for connection with circuit elements (such as capacitance sensing elements) outside the silicon wafer 1 are preferably grown on the surfaces of the vertical leads 8.
(4) In the specific implementation of the step of selectively releasing the sacrificial layer, the sacrificial layer is selectively removed by laser selective heating or wet etching to form the micro flow channel 10.
Specifically, the selective release sacrificial layer step is to locally remove the organic polymer layer 5 by using a laser heating or wet etching method to form a microfluidic channel for flowing cooling liquid.
(4.1) when laser heating is used, the selective release sacrificial layer may include:
etching a release hole 9, placing the silicon wafer 1 on a laser heating platform 18 capable of moving in three dimensions, selectively heating locally by using a light spot of laser to penetrate the silicon dioxide layer 6 so as to remove the organic polymer layer 5 to form a micro-channel 10, growing a first upper polar plate 11 of the flow rate sensing unit and a second upper polar plate 20 of the pressure sensing unit on the surface of the silicon dioxide layer 6, and etching the silicon dioxide layer 6 to form a mechanical sensitive structure 12.
In a specific implementation, the lithographically etched silica layer and the organic polymer layer 5 form an organic polymer release hole 9, which may also serve as an access hole for microfluidic cooling fluid ((e) in fig. 1). The surface of the silicon dioxide layer is preferably sputtered with chromium/gold, so as to form a first upper polar plate 11 and a corresponding horizontal lead 3 bonding pad structure of the liquid flowmeter (i.e. the flow rate sensing unit), a second upper polar plate 20 and a corresponding horizontal lead 3 bonding pad structure of the pressure sensing unit, and the other cooling liquid inlet and outlet hole 13 and the cantilever beam or beam-plate mechanical sensitive structure 12 of the micro-channel 10 are etched (fig. 1 (g)). By the selective heating function of the laser, the organic polymer layer 5 is locally heated by irradiation and penetration of the silicon oxide layer, only the organic polymer heated by the laser is released to form the micro flow channels 10, and the organic polymer not irradiated by the laser is not affected ((f) in fig. 1).
In one embodiment, fig. 3 is a schematic diagram illustrating a principle of laser heating a release sacrificial layer according to an exemplary embodiment. The system for laser heating is positioned in a box body 15 which can be vacuumized or filled with protective gas, laser emitted by a laser 16 passes through a lens 17 with an adjustable shape and directly irradiates the lower organic polymer layer 5 through a silicon dioxide layer which is transparent on the upper surface of the silicon wafer 1, the wafer is positioned on a laser heating platform 18 which can move in three dimensions, and the silicon wafer 1 is driven to move by the movement of the laser heating platform 18, so that the laser heats different positions, and the rapid ashing of the organic polymer layer 5 is realized.
(4.2) when wet etching is used, the selective release sacrificial layer comprises: etching a release hole 9, growing a side wall protection layer 14 on the outer side wall of the release hole 9, patterning, removing the sacrificial layer which is not protected by the protection layer 14 on the inner side of the release hole 9 by using a selective corrosive liquid to form a micro-channel 10, growing a first upper polar plate 11 of the flow rate sensing unit and a second upper polar plate 20 of the pressure sensing unit on the surface of the silicon dioxide layer 6, and etching the silicon dioxide layer 6 to form a mechanical sensitive structure 12.
In a specific implementation, the lithographically etched silica layer and the organic polymer layer 5 form an organic polymer release hole 9, which may also serve as an access hole for microfluidic cooling fluid ((e) in fig. 1). A sidewall protection layer 14 is preferably grown and patterned on the outer sidewall of the organic polymer release hole 9 ((a) of fig. 2), and the protection layer 14 is preferably PECVD grown silicon dioxide or sputter grown titanium. Immersing in a selective etching solution to remove the unprotected organic polymer inside the organic polymer release holes 9 and form micro flow channels 10 (fig. 2 (b)). The selective etching solution may be preferably a mixed solution of concentrated sulfuric acid and hydrogen peroxide (when the protective layer 1414 is silicon dioxide) or fuming nitric acid (when the protective layer 1414 is titanium), removing the sidewall protective layer 1414 (fig. 2 (c)), and sputtering chromium/gold on the surface of the silicon dioxide layer to form a second upper plate 20 of the pressure sensing unit and a corresponding interconnection wire pad structure, a first upper plate 11 of the flow rate sensing unit and a corresponding interconnection wire pad structure, and etching another cooling solution inlet and outlet hole 13 of the micro flow channel 10 and the cantilever beam or beam-plate mechanical sensitive structure 12 (fig. 2 (d)).
In a specific implementation, the mechanically sensitive structure 12 is a mechanical structure that deforms elastically under the flow of the microfluid, and is a cantilever beam, a folded beam-flat plate, a perforated film, or a folded beam-comb structure.
As shown in fig. 4 and fig. 5, the measuring principle of the micro-fluid flow rate is capacitive, and when in operation, the cooling liquid flows to drive the mechanically sensitive structure 12 to deviate from the equilibrium position, so that the capacitance of the parallel plate formed by the first upper polar plate 11 and the first lower polar plate 4 (or the second upper polar plate 20 and the second lower polar plate 19) is changed, and the corresponding flow rate and flow rate of the cooling liquid can be obtained by detecting the capacitance change. The temperature of the microfluidics is measured by platinum resistance. The pressure of the micro flow channel 10 to the pipe wall can be measured by a capacitive pressure sensor, a lower electrode plate of the capacitance of the pressure sensor and an interconnection line are deposited in the micro flow channel 10 of the silicon wafer 1, a second upper electrode plate 20 of the capacitance of the pressure sensor is deposited on the upper surface of the micro flow channel 10 outside the mechanical sensitive structure 12, and the capacitive pressure sensor can measure slight deformation of the pipe wall caused by overlarge cooling fluid pressure.
Preferably, before the step of selectively releasing the sacrificial layer, a step of constructing the shock compensation structure 21 is further included: parallel plate capacitors with the same mechanically sensitive structures 12 are fabricated on the silicon wafer 1 in areas other than the fluidic channels 10.
Fig. 6 shows a vibration compensation structure 21 of the micro flow channel 10 capable of measuring flow velocity, pressure and temperature according to the present invention. The capacitive flowmeter (i.e. the flow rate sensing unit) has a certain sensitivity to vibration due to the mechanical sensitive structure 12, so that in order to eliminate errors generated by vibration on fluid pressure measurement, parallel plate capacitors with the same mechanical sensitive structure 12 can be manufactured at nearby positions outside the micro-channel 10, and only the capacitance change caused by vibration is sensed without being influenced by microfluid.
The present application also provides an application of the wafer system micro-fluidic channel 10 manufactured according to the above method and capable of measuring flow rate, pressure and temperature, to prepare a silicon wafer interposer with a silicon vertical through hole 25 or a redistribution layer 24 for three-dimensional vertical stacking integration of multi-layer integrated circuit chips 22 or wafers. In one embodiment, as shown in fig. 7, an integrated circuit chip 22 is bonded to a silicon wafer interposer with a redistribution layer 24 and a wafer system microchannel 10 capable of measuring flow rate, pressure and temperature through micro bumps 23, and signals are led out from the bottom through silicon vertical vias 25 (TSVs).
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains.
It is to be understood that the present application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof.
Claims (9)
1. The manufacturing method of the wafer system micro-channel capable of measuring the flow rate, the pressure and the temperature is characterized by comprising the following steps of:
(1) A liquid sensing measurement element manufacturing step: the method comprises the steps of respectively depositing a temperature sensing unit, a flow rate sensing unit, a pressure sensing unit and corresponding horizontal leads on the surface of a silicon wafer, wherein the specific steps are as follows: depositing titanium/platinum on the surface of the silicon wafer as the temperature sensing unit, and depositing chromium/gold to form a first lower polar plate and a corresponding horizontal lead of the flow rate sensing unit, a second lower polar plate and a corresponding horizontal lead of the pressure sensing unit and a corresponding horizontal lead of the temperature sensing unit;
(2) And (3) a film deposition step: sequentially growing a sacrificial layer and a silicon dioxide layer on the silicon wafer;
(3) A signal extraction step: growing a vertical lead, and leading the temperature sensing unit, the flow rate sensing unit and the pressure sensing unit on the silicon wafer to the outer side through the horizontal lead and the vertical lead, wherein the growing of the vertical lead is specifically as follows: etching the silicon dioxide layer and the organic polymer layer to form a vertical lead hole, and growing a vertical lead in the vertical lead hole by using electroplated copper;
(4) Selectively releasing the sacrificial layer: and selectively removing the sacrificial layer by using a laser selective heating or wet etching method to form a micro-channel.
2. The method of claim 1, wherein the thin film depositing step comprises:
and growing an organic polymer layer on the silicon wafer as a sacrificial layer, wherein the material of the sacrificial layer is selected from SU8, polyimide and BCB, and growing a silicon dioxide layer by using an ion-enhanced chemical vapor deposition method.
3. The method of claim 2, wherein the signal extraction step comprises:
and etching the silicon dioxide layer and the organic polymer layer to form a vertical lead hole, growing a vertical lead in the vertical lead hole by using electroplated copper, leading the first lower polar plate of the temperature sensing unit, the first lower polar plate of the flow rate sensing unit and the second lower polar plate of the pressure sensing unit to the outer side through the horizontal lead and the vertical lead, and growing a chromium/gold bonding pad.
4. The method of claim 1, wherein the selectively releasing the sacrificial layer is by locally removing the sacrificial layer by laser heating or wet etching to form a microfluidic channel for the flow of a cooling fluid.
5. The method of claim 4, wherein the selectively releasing the sacrificial layer when heated with a laser comprises:
etching a release hole, placing the silicon wafer on a laser heating platform capable of moving in three dimensions, selectively heating locally by using a light spot of laser through the silicon dioxide layer to remove the sacrificial layer to form a micro-channel, growing a first upper polar plate of the flow rate sensing unit and a second upper polar plate of the pressure sensing unit on the surface of the silicon dioxide layer, and etching the silicon dioxide layer to form a mechanical sensitive structure.
6. The method of claim 4, wherein the selectively releasing the sacrificial layer when wet etching is employed comprises:
etching a release hole, growing a side wall protection layer on the outer side wall of the release hole, patterning, removing the sacrificial layer which is not protected by the protection layer on the inner side of the release hole by using a selective corrosive liquid to form a micro-channel, growing a first upper polar plate of the flow rate sensing unit and a second upper polar plate of the pressure sensing unit on the surface of the silicon dioxide layer, and etching the silicon dioxide layer to form a mechanical sensitive structure.
7. The method of claim 5 or 6, wherein the mechanically sensitive structure is a mechanical structure that deforms elastically under the flow of the microfluidics, is a cantilever beam, a folded beam-plate, a perforated film, or a folded beam-comb structure.
8. The method of claim 1, further comprising, prior to the selectively releasing sacrificial layer step, a shock compensating structure building step of: and manufacturing a parallel plate capacitor with the same mechanical sensitive structure in a non-micro flow channel area on the silicon wafer.
9. Use of a fluidic channel of a wafer system with measurable flow rate, pressure and temperature manufactured according to any one of claims 1-8, for the preparation of a silicon wafer interposer with vertical through-silicon vias or redistribution layers for three-dimensional vertical stack integration of multilayer integrated circuit chips or wafers.
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| CN111180526A (en) * | 2018-11-09 | 2020-05-19 | 无锡力芯微电子股份有限公司 | Transient voltage suppressor and method of manufacturing the same |
| CN110556416A (en) * | 2019-06-29 | 2019-12-10 | 上海长园维安微电子有限公司 | Low-residual-voltage large-surge unidirectional snapback TVS device and manufacturing method thereof |
| CN110729200A (en) * | 2019-09-24 | 2020-01-24 | 杭州臻镭微波技术有限公司 | Manufacturing method of three-dimensional heterogeneous module for controlling flow of radiator |
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