CN115793411A - UV irradiation device for semiconductor process and semiconductor process equipment - Google Patents

Abstract

The invention provides a UV irradiation device and semiconductor process equipment for semiconductor technology, comprising: a UV light source placed above the semiconductor device to be processed to irradiate the surface to be processed of the semiconductor device in a vertical direction; a beam splitter, a beam splitter Located between the UV light source and the semiconductor device, the spectroscope includes an inclined surface and a bottom surface respectively covering the irradiation range of the UV light source. The inclined surface is provided with a UV reflective layer to reflect the ultraviolet light emitted by the UV light source. plate to block the infrared light emitted by the UV light source from being transmitted to the surface to be processed of the semiconductor device; Some ultraviolet light is reflected and covered to the surface to be processed of the semiconductor device.

Description

A UV irradiation device and semiconductor process equipment for semiconductor process

technical field

The invention relates to semiconductor process equipment, in particular to a UV irradiation device for semiconductor process.

Background technique

In the process flow of semiconductors, it is inevitable to irradiate with ultraviolet light, that is, UV irradiation. For example, the UV irradiation process is essential in process steps such as photolithography or colloid curing, and the quality of UV irradiation directly affects the product yield of the process.

However, since the UV lamps will produce light in other bands in addition to the ultraviolet light required for the work of the process equipment during work, and these other bands of light may interfere with the process to be carried out by the machine, it is necessary to monitor these lights for additional filtering. At the same time, when the machine is running, the optical effect of the part that can be irradiated on the surface of the semiconductor device is also unstable, and the optical path system needs to be adjusted in a targeted manner to ensure that the light intensity is evenly distributed everywhere, thereby ensuring The quality of craft production.

In order to overcome the above-mentioned defects in the prior art, there is an urgent need in the art for a UV irradiation device for semiconductor technology, which is used to filter out the infrared light in the ultraviolet light source and increase the reflection of ultraviolet light, thereby reducing the impact of UV light on semiconductors. The influence of temperature on the surface of the device makes the temperature factor completely controlled by the heating plate, reducing the influence of light temperature on the process steps, and at the same time, the optical path system can be adjusted in a targeted manner to obtain a more uniform distribution of light intensity and improve the light process. The quality of the steps.

Contents of the invention

A brief summary of one or more aspects is presented below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects and is intended to neither identify key or critical elements of all aspects nor attempt to delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

In order to overcome the above-mentioned defects existing in the prior art, the present invention provides a kind of UV irradiation device for semiconductor technology, comprising: a UV light source, placed above the semiconductor device to be processed to irradiate the semiconductor device to be processed in the vertical direction surface; beam splitter, the beam splitter is located between the UV light source and the semiconductor device, the beam splitter includes a slope and a bottom surface that respectively cover the irradiation range of the UV light source, and the slope is provided with a UV reflective layer to reflect the UV light source The ultraviolet light, the bottom surface is a baffle provided with an infrared blocking layer to prevent the infrared light emitted by the UV light source from being transmitted to the surface to be processed of the semiconductor device; and an ultraviolet reflector, the ultraviolet reflector and the beam splitter are arranged on The same horizontal position is configured to receive the ultraviolet light reflected by the beam splitter, and then reflect and cover the ultraviolet light to the surface to be processed of the semiconductor device.

In one embodiment, preferably, the side section of the ultraviolet reflector is an arc surface, and the concave surface of the arc surface faces the beam splitter and the semiconductor device. The rotating shaft rotates to adjust the setting angle of the ultraviolet reflector so as to adjust the light intensity distribution of the ultraviolet light reflected to the surface to be processed of the semiconductor device.

In one embodiment, preferably, the UV irradiation device for the semiconductor process provided by the present invention further includes: a parallel beam splitter or a light intensity homogenization modulator, arranged between the UV light source and the beam splitter, so that the UV The light irradiated by the light source to the beam splitter is parallel or the light intensity is uniform everywhere.

In one embodiment, preferably, the UV light source includes two UV lamp tubes placed in parallel, and the length of the UV lamp tubes is not less than the width of the surface to be processed of the semiconductor device in a corresponding direction.

In one embodiment, preferably, the beam splitter is a strip-shaped prism with a length corresponding to the UV lamp tube. The surface to be processed of the semiconductor device is parallel and covers the irradiation range of the two UV lamp tubes.

In one embodiment, preferably, the ultraviolet reflector includes two strip-shaped curved panels facing the two slopes upwards of the strip-shaped prism, the length of the strip-shaped curved panels corresponds to the strip-shaped prism, and the middle edge The extension direction is provided with a rotation axis, and the strip-shaped arc panel rotates around the rotation axis to adjust the installation angle of the two ultraviolet reflectors so as to adjust the light intensity distribution of the ultraviolet light reflected to the surface to be processed of the semiconductor device.

In one embodiment, preferably, the UV irradiation device of the semiconductor process provided by the present invention further includes: two parallel light beam splitters or light intensity homogenizing modulators, which are respectively arranged at the ends of the two UV lamp tubes and the beam splitter. Between the two slopes, so that the light rays irradiated by the two UV lamps to the two slopes of the beam splitter are parallel or the light intensity is uniform everywhere.

In one embodiment, preferably, all the components in the UV irradiation device can rotate around the central position in the horizontal direction to ensure that the light intensity irradiated to the surface to be processed of the semiconductor device is uniformly distributed in the circumferential direction.

In an embodiment, preferably, the inclined surface of the beam splitter is provided with a coated reflective layer for increasing the reflection of ultraviolet light and the transmission of infrared light.

In an embodiment, optionally, the coated reflective layer is made of hafnium oxide or aluminum oxide.

Another aspect of the present invention also provides a semiconductor process equipment, including the UV irradiation device described in any one of the above.

In an embodiment, preferably, the carrier plate where the semiconductor device is located can rotate around the center to ensure that the light intensity irradiated by the UV irradiation device to the surface to be processed of the semiconductor device is evenly distributed in the circumferential direction.

Description of drawings

The above-mentioned features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

FIG. 1 is a schematic diagram of a device structure of a UV irradiation device for a semiconductor process according to an embodiment of the present invention.

For clarity, a brief description of the reference numbers is given below:

101UV light source

102 Semiconductor devices

103 beam splitter

104 UV reflector

1041 rotation axis

105 parallel light beam splitter or light intensity homogenization modulator

106 carrying plate

Detailed ways

The implementation of the present invention will be illustrated by specific specific examples below, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the invention will be presented in conjunction with a preferred embodiment, it is not intended that the features of the invention be limited to that embodiment only. On the contrary, the purpose of introducing the invention in conjunction with the embodiments is to cover other options or modifications that may be extended based on the claims of the present invention. The following description contains numerous specific details in order to provide a thorough understanding of the present invention. The invention may also be practiced without these details. Also, some specific details will be omitted from the description in order to avoid obscuring or obscuring the gist of the present invention.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", and "vertical" used in the following descriptions should be understood The orientation shown in the figure. The relative terms are used for convenience of description only, and do not imply that the device described therein must be manufactured or operated in a specific orientation, and thus should not be construed as limiting the present invention.

It can be understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and/or sections, these components, regions, layers and/or sections It should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and/or sections. Thus, a first component, region, layer and/or section discussed below could be termed a second component, region, layer and/or section without departing from some embodiments of the present invention.

In order to overcome the above-mentioned defects in the prior art, the present invention provides a UV irradiation device for semiconductor technology, which is used to filter the infrared light in the ultraviolet light source and increase the reflection of ultraviolet light, thereby reducing the impact of UV light on semiconductors. The influence of temperature on the surface of the device makes the temperature factor completely controlled by the heating plate, reducing the influence of light temperature on the process steps, and at the same time, the optical path system can be adjusted in a targeted manner to obtain a more uniform distribution of light intensity and improve the light process. The quality of the steps.

FIG. 1 is a schematic diagram of a device structure of a UV irradiation device for a semiconductor process according to an embodiment of the present invention.

Please refer to Fig. 1, the UV irradiation device that the present invention provides for semiconductor technology comprises: UV light source 101, is placed above the semiconductor device 102 to be processed to irradiate the surface to be processed of this semiconductor device 102 along the vertical direction; 103, the beam splitter 103 is located between the UV light source 101 and the semiconductor device 102, the beam splitter 103 includes a slope and a bottom surface respectively covering the irradiation range of the UV light source 101, the slope is provided with a UV reflective layer to reflect the UV The ultraviolet light that light source 101 sends, this bottom surface is the baffle plate that is provided with infrared blocking layer to stop the infrared light that this UV light source sends and transmits to the surface to be processed of this semiconductor device 102; And ultraviolet reflector 104, this ultraviolet reflector 104 Set at the same horizontal position as the beam splitter 103, configured to receive the ultraviolet light reflected by the beam splitter 103, and then reflect and cover the ultraviolet light to the surface to be processed of the semiconductor device 102, the dotted arrow in Figure 1 That is, it indicates the direction of the light path.

In one embodiment, preferably, as shown in FIG. 1, the side section of the ultraviolet reflector 104 is an arc surface, and the concave surface of the arc surface faces the beam splitter 103 and the semiconductor device 102. At this time, the ultraviolet reflector 104 is It is a concave mirror, which can better reflect ultraviolet light.

The ultraviolet reflector 104 can also be provided with a rotating shaft 1041, and the arc rotates around the rotating shaft 1041 to adjust the setting angle of the ultraviolet reflecting mirror 104 so as to adjust the ultraviolet light reflected to the surface to be processed of the semiconductor device 102. light intensity distribution.

In a preferred embodiment, you can continue to refer to FIG. 1, the UV irradiation device for the semiconductor process provided by the present invention also includes: a parallel light beam splitter or a light intensity homogenization modulator 105, which is located between the UV light source 101 and the beam splitter 103, so that the light irradiated by the UV light source 101 to the beam splitter 103 is parallel or the light intensity is uniform everywhere.

For easy understanding, FIG. 1 is a cross-sectional view of the device structure of the UV irradiation device, and the spatial arrangement of the components in the irradiation device will be described below in conjunction with an embodiment.

Referring to FIG. 1 , in an embodiment, the UV light source 101 may include two UV lamp tubes placed in parallel, and the length of the UV lamp tubes is not less than the width of the surface to be processed of the semiconductor device in the corresponding direction. For example, the diameter of the UV lamp can be 300mm equal to the diameter of the wafer to be processed.

Further preferably, the beam splitter 103 is a strip prism with a length corresponding to that of the UV lamp, for example, it may also be 300 mm. As shown in FIG. 1 , the two upward slopes of the strip prism face two UV lamp tubes respectively, and the downward bottom surface is parallel to the surface to be processed of the semiconductor device and covers the irradiation range of the two UV lamp tubes.

In an embodiment, preferably, the inclined surface of the beam splitter 103 is provided with a coated reflective layer for increasing the reflection of ultraviolet light and the transmission of infrared light. For example, the coating reflection layer can be made of hafnium oxide or aluminum oxide material, so that the two slopes can reflect the ultraviolet light in the UV lamp tube to the ultraviolet reflector 104 on the side, so as to achieve the maximum utilization limit of ultraviolet light.

Other wavelengths of light in the UV tube, such as infrared rays, can pass through the two inclined surfaces, and then be blocked by the infrared blocking layer arranged on the bottom surface. For example, the bottom surface can be made of metal, so as to absorb the infrared rays in the light source, and block the heat generated by the infrared rays in designated non-important areas, such as the bottom baffle, so as to prevent the infrared rays from irradiating the wafer from undesired thermal effects. Process temperature control, thereby reducing the problem of temperature instability in the cavity caused by the infrared light source.

At the same time, in this preferred embodiment, the ultraviolet reflector 104 can be two strip-shaped arc panels facing the upward slopes of the strip-shaped prism respectively. Correspondingly, for example, it can be 300mm at the same time.

The middle of the strip-shaped arc panel is provided with a rotation axis 1041 along the extension direction, and the strip-shaped arc panel rotates around the rotation axis 1041 to adjust the setting angles of the two ultraviolet reflectors 104 so as to adjust its reflection to the semiconductor device 102 to be processed. The intensity distribution of UV light on a surface. For example, by adjusting the angle of the arc panel, the distribution of light intensity in the center area and edge area of the silicon wafer can be adjusted, so that the light intensity can be adjusted according to the process requirements.

In addition, in this preferred embodiment, the UV irradiation device for semiconductor process provided by the present invention can also include: two parallel light beam splitters or light intensity homogenization modulators 105, respectively located on the two UV between the lamp tube and the two slopes of the beam splitter 103, so that the light rays irradiated by the two UV lamps to the two slopes of the beam splitter 103 are parallel or the light intensity is uniform everywhere. It is easy to understand that the two parallel beam splitters or light intensity homogenizing modulators 105 are also strip-shaped, and the length can be correspondingly 300 mm, so as to cooperate with other device components.

Under the spatial arrangement of the UV irradiation device for semiconductor process provided by the present invention, it is further preferred that all the components in the UV irradiation device can rotate around the central position in the horizontal direction to ensure that the radiation to the semiconductor device to be processed The light intensity on the surface is evenly distributed in the circumferential direction, which further improves the process quality.

It should be noted that the arrangement of the above UV irradiation devices in space is only for illustrative purposes and is not intended to limit the protection scope of the present invention. In fact, the number of UV lamps, the shape of space, and other supporting settings The spatial shape of the device components such as the beam splitter and the ultraviolet reflector can also be other forms, as long as the similar principle can be used to filter the infrared light and enhance the ultraviolet light reflection by using the optical path direction, and at the same time realize the targeted adjustment of the illumination area range and light intensity Similar schemes can be applied to the UV irradiation device for semiconductor process provided by the present invention, and should also be included in the protection scope of the present invention.

Another aspect of the present invention also provides a semiconductor process equipment, including the UV irradiation device described in any one of the above. The semiconductor process equipment can be used in semiconductor process steps that require UV light process, such as photolithography or curing colloid.

In an embodiment, preferably, the carrier plate where the semiconductor device is located can rotate around the center to ensure that the light intensity irradiated by the UV irradiation device to the surface to be processed of the semiconductor device is evenly distributed in the circumferential direction.

That is to say, in the UV irradiation device for semiconductor process provided by the present invention or the semiconductor process equipment comprising the UV irradiation device, it can be that all the parts in the UV irradiation device can rotate around the central position in the horizontal direction, or It can be that the carrier plate where the semiconductor device is located can rotate around the center, or both can rotate around the center position, so that the light intensity distribution received by the silicon wafer can be fully adjusted to meet different irradiation process requirements and improve the illumination process. the quality of.

The UV irradiation device used in the semiconductor process provided by the present invention is used to filter the infrared light in the ultraviolet light source and increase the reflection of the ultraviolet light at the same time, thereby reducing the temperature influence of the UV light on the surface of the semiconductor device, so that the temperature factor is completely determined by The heating plate is controlled to reduce the influence of the light temperature on the process steps. At the same time, the angle of the mirror can be adjusted, and the whole set of irradiation device or the carrier plate where the wafer is located can be rotated around the center, so that the optical path system can be adjusted in a targeted manner to obtain more Uniform illumination light intensity distribution improves the quality of illumination process steps.

The previous description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (12)

1. A UV irradiation device for semiconductor process, comprising: A UV light source placed above the semiconductor device to be processed to irradiate the surface to be processed of the semiconductor device in a vertical direction; A beam splitter, the beam splitter is arranged between the UV light source and the semiconductor device, the beam splitter includes a slope and a bottom surface respectively covering the irradiation range of the UV light source, and the slope is provided with a UV reflective layer to reflect The ultraviolet light emitted by the UV light source, the bottom surface is a baffle provided with an infrared blocking layer to prevent the infrared light emitted by the UV light source from being transmitted to the surface to be processed of the semiconductor device; and An ultraviolet reflector, the ultraviolet reflector and the beam splitter are arranged at the same horizontal position, configured to receive the ultraviolet light reflected by the beam splitter, and then reflect and cover the ultraviolet light to the semiconductor device. Process the surface. 2. UV irradiation device as claimed in claim 1, is characterized in that, the side section of described ultraviolet reflector is arc surface, and the concave surface of described arc surface is towards described spectroscope and described semiconductor device, and described ultraviolet reflector A rotating shaft is also provided on the mirror, and the arc surface rotates around the rotating shaft to adjust the installation angle of the ultraviolet reflector so as to adjust the light intensity distribution of the ultraviolet light reflected to the surface to be processed of the semiconductor device. 3. UV irradiation device as claimed in claim 1, is characterized in that, also comprises: The parallel light beam splitter or light intensity homogenization modulator is arranged between the UV light source and the beam splitter, so that the light irradiated by the UV light source to the beam splitter is parallel or the light intensity is uniform everywhere. 4. UV irradiation device as claimed in claim 1, is characterized in that, described UV light source comprises two UV lamp tubes that are placed in parallel, and the length of described UV lamp tube is not less than the corresponding direction of the surface to be processed of described semiconductor device width. 5. UV irradiation device as claimed in claim 4, is characterized in that, described dichroic mirror is the strip-shaped prism corresponding to length and described UV lamp tube, and described strip-shaped prism faces two slopes facing upwards respectively toward two sides. The bottom surface facing downward is parallel to the surface to be processed of the semiconductor device and covers the irradiation range of the two UV lamp tubes. 6. UV irradiation device as claimed in claim 5, is characterized in that, described ultraviolet reflector comprises two upward striped arc panels towards two slopes of described striped triangular prism respectively, the strip arc panel of described strip arc panel The length corresponds to the striped triangular prism, and a rotation axis is set in the middle along the extension direction, and the strip arc panel rotates around the rotation axis to adjust the installation angle of the two ultraviolet reflectors so as to adjust their reflection to the semiconductor The intensity distribution of ultraviolet light on the surface of the device to be processed. 7. UV irradiation device as claimed in claim 5, is characterized in that, also comprises: Two parallel light beam splitters or light intensity homogenizing modulators are respectively arranged between the two UV lamp tubes and the two slopes of the beam splitter, so that the two UV lamp tubes irradiate the beam splitter The light rays on the two slopes of the mirror are parallel or the light intensity is uniform everywhere. 8. UV irradiation device as claimed in claim 6, is characterized in that, all parts in the described UV irradiation device can rotate around center position in horizontal direction to ensure that the light intensity that irradiates to the surface to be processed of described semiconductor device is between Evenly distributed around the circumference. 9. The UV irradiation device according to claim 1, characterized in that, the inclined surface of the beam splitter is provided with a coated reflective layer for increasing the reflection of ultraviolet light and the transmission of infrared light. 10. The UV irradiation device according to claim 9, characterized in that the reflective coating layer is made of hafnium oxide or aluminum oxide. 11. A semiconductor process equipment, comprising the UV irradiation device according to any one of claims 1-10. 12. The semiconductor process equipment according to claim 11, wherein the carrier plate on which the semiconductor device is located can rotate around the center to ensure that the light intensity of the UV irradiation device irradiated to the surface to be processed of the semiconductor device is within Evenly distributed around the circumference.

Images