CN115793411A - UV irradiation device for semiconductor process and semiconductor process equipment - Google Patents
UV irradiation device for semiconductor process and semiconductor process equipment Download PDFInfo
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- CN115793411A CN115793411A CN202211598761.2A CN202211598761A CN115793411A CN 115793411 A CN115793411 A CN 115793411A CN 202211598761 A CN202211598761 A CN 202211598761A CN 115793411 A CN115793411 A CN 115793411A
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- semiconductor device
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- ultraviolet
- light source
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000000903 blocking effect Effects 0.000 claims abstract description 5
- 238000009826 distribution Methods 0.000 claims description 11
- 238000000265 homogenisation Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 description 10
- 238000001914 filtration Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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Abstract
The invention provides a UV irradiation device for a semiconductor process and semiconductor process equipment, comprising: a UV light source disposed above the semiconductor device to be processed to irradiate a surface to be processed of the semiconductor device in a vertical direction; the spectroscope is arranged between the UV light source and the semiconductor device and comprises an inclined surface and a bottom surface which respectively cover the irradiation range of the UV light source, the inclined surface is provided with an ultraviolet reflection layer to reflect ultraviolet light emitted by the UV light source, and the bottom surface is a baffle plate provided with an infrared blocking layer to block infrared light emitted by the UV light source from transmitting to the surface to be processed of the semiconductor device; and the ultraviolet reflecting mirror and the spectroscope are arranged at the same horizontal position, and are configured to receive the ultraviolet light reflected by the spectroscope, reflect the ultraviolet light and cover the ultraviolet light on the surface to be processed of the semiconductor device.
Description
Technical Field
The invention relates to semiconductor process equipment, in particular to a UV irradiation device for a semiconductor process.
Background
In a semiconductor process flow, irradiation of ultraviolet light, i.e., UV irradiation, is inevitably required. For example, a UV irradiation process is indispensable in a process step such as photolithography or colloid curing, and the quality of UV irradiation directly affects the product yield of the process.
However, since the UV lamp generates light in other wavelength bands besides the UV light required for the operation of the process equipment when operating, the light in these other wavelength bands may interfere with the process performed by the tool, and additional filtering of the light is required. Meanwhile, when the machine table operates, the optical effect of the part irradiated by the surface of the semiconductor device is unstable, and the optical path system needs to be adjusted in a targeted manner, so that the light intensity is uniformly distributed everywhere, and the quality of the process production is ensured.
In order to overcome the above defects in the prior art, what is needed in the art is a UV irradiation device for a semiconductor process, which is used for filtering out infrared light in an ultraviolet light source and increasing reflection of ultraviolet light, thereby reducing the temperature influence of UV light on the surface of a semiconductor device, completely controlling temperature factors by a heating plate, reducing the influence of illumination temperature on process steps, and meanwhile, performing targeted adjustment on an optical path system, further obtaining more uniform illumination intensity distribution, and improving the quality of the illumination process steps.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the above-mentioned drawbacks of the prior art, the present invention provides a UV irradiation apparatus for a semiconductor process, comprising: a UV light source disposed above a semiconductor device to be processed to irradiate a surface to be processed of the semiconductor device in a vertical direction; the spectroscope is arranged between the UV light source and the semiconductor device and comprises an inclined plane and a bottom plane which respectively cover the irradiation range of the UV light source, the inclined plane is provided with an ultraviolet reflection layer to reflect ultraviolet light emitted by the UV light source, and the bottom plane is a baffle provided with an infrared blocking layer to block infrared light emitted by the UV light source from transmitting to the surface to be processed of the semiconductor device; and the ultraviolet reflecting mirror and the spectroscope are arranged at the same horizontal position, and are configured to reflect and cover the ultraviolet light to the surface to be processed of the semiconductor device after receiving the ultraviolet light reflected by the spectroscope.
In an embodiment, preferably, the lateral cross section of the ultraviolet reflecting mirror is a cambered surface, a concave surface of the cambered surface faces the beam splitter and the semiconductor device, the ultraviolet reflecting mirror is further provided with a rotating shaft, and the cambered surface rotates around the rotating shaft to adjust a setting angle of the ultraviolet reflecting mirror so as to adjust the light intensity distribution of ultraviolet light reflected to the surface to be processed of the semiconductor device.
In one embodiment, preferably, the UV irradiation apparatus for semiconductor processing further includes: the parallel light beam splitter or the light intensity homogenizing modulator is arranged between the UV light source and the beam splitter, so that the light irradiated to the beam splitter by the UV light source is parallel or the light intensity at each position is uniform.
In one embodiment, the UV light source preferably includes two UV lamps disposed in parallel, and the length of the UV lamps is not less than the width of the semiconductor device in the direction corresponding to the surface to be processed.
In an embodiment, the beam splitter is preferably a triangular prism bar having a length corresponding to that of the UV lamp tube, two inclined surfaces of the triangular prism bar facing upward face the two UV lamp tubes respectively, and a bottom surface facing downward is parallel to the surface to be processed of the semiconductor device and covers the irradiation range of the two UV lamp tubes.
In one embodiment, the ultraviolet reflecting mirror preferably includes two strip-shaped arc panels respectively facing two slopes of the strip-shaped triangular prism upward, the length of the strip-shaped arc panel corresponds to that of the strip-shaped triangular prism, a rotating shaft is arranged in the middle of the strip-shaped arc panel along the extending direction, and the strip-shaped arc panel rotates around the rotating shaft to adjust the setting angles of the two ultraviolet reflecting mirrors so as to adjust the light intensity distribution of ultraviolet light reflected to the surface to be processed of the semiconductor device.
In one embodiment, preferably, the UV irradiation apparatus for semiconductor processing further includes: two parallel light beam splitters or light intensity homogenization modulators are respectively arranged between the two UV lamp tubes and the two inclined planes of the beam splitter, so that the light rays irradiated to the two inclined planes of the beam splitter by the two UV lamp tubes are parallel or the light intensity at each position is uniform.
In one embodiment, preferably, all components in the UV irradiation apparatus may be rotated in a horizontal direction about a central position to ensure that the intensity of light irradiated to the surface to be processed of the semiconductor device is uniformly distributed in a circumferential direction.
In an embodiment, preferably, the inclined plane of the beam splitter is provided with a coated reflection layer for increasing the reflection of ultraviolet light and the transmission of infrared light.
In one embodiment, the coated reflective layer is made of hafnium oxide or aluminum oxide material.
Another aspect of the invention also provides semiconductor processing equipment comprising a UV irradiation device as described in any one of the above.
In one embodiment, the carrier tray on which the semiconductor device is placed is preferably rotatable about a center to ensure that the intensity of light irradiated by the UV irradiation device to the surface to be processed of the semiconductor device is uniformly distributed in the circumferential direction.
Drawings
The above features and advantages of the present disclosure will be better understood upon reading the detailed description of embodiments of the disclosure in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components having similar relative characteristics or features may have the same or similar reference numerals.
Fig. 1 is a schematic device structure diagram of a UV irradiation device for semiconductor processing according to an embodiment of the invention.
For clarity, a brief description of the reference numerals is given below:
101UV light source
102 semiconductor device
103 spectroscope
104 ultraviolet reflector
1041 rotating shaft
105 parallel light beam splitter or light intensity homogenization modulator
106 carrying tray
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure. While the invention will be described in connection with the preferred embodiments, there is no intent to limit its features to those embodiments. On the contrary, the invention is described in connection with the embodiments for the purpose of covering alternatives or modifications that may be extended based on the claims of the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The invention may be practiced without these particulars. Moreover, some of the specific details have been left out of the description in order to avoid obscuring or obscuring the focus of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Additionally, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," "vertical" and the like as used in the following description are to be understood as referring to the segment and the associated drawings in the illustrated orientation. The relative terms are used for convenience of description only and do not imply that the described apparatus should be constructed or operated in a particular orientation and therefore should not be construed as limiting the invention.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms, but rather are used to distinguish one element, region, layer and/or section from another element, region, layer and/or section. Thus, a first component, region, layer and/or section discussed below could be termed a second component, region, layer and/or section without departing from some embodiments of the present invention.
In order to overcome the defects in the prior art, the invention provides the UV irradiation device for the semiconductor process, which is used for filtering infrared light in an ultraviolet light source and increasing the reflection of the ultraviolet light, so that the temperature influence of UV light on the surface of a semiconductor device is reduced, the temperature factor is completely controlled by a heating plate, the influence of the illumination temperature on the process steps is reduced, meanwhile, a light path system can be adjusted in a targeted manner, more uniform illumination light intensity distribution is obtained, and the quality of the illumination process steps is improved.
Fig. 1 is a schematic device structure diagram of a UV irradiation device for semiconductor processing according to an embodiment of the invention.
Referring to fig. 1, the present invention provides a UV irradiation apparatus for semiconductor process, including: a UV light source 101 disposed above a semiconductor device 102 to be processed to irradiate a surface to be processed of the semiconductor device 102 in a vertical direction; a spectroscope 103, the spectroscope 103 being disposed between the UV light source 101 and the semiconductor device 102, the spectroscope 103 including an inclined surface and a bottom surface respectively covering an irradiation range of the UV light source 101, the inclined surface being provided with an ultraviolet reflection layer to reflect ultraviolet light emitted from the UV light source 101, the bottom surface being a baffle plate provided with an infrared blocking layer to block infrared light emitted from the UV light source from transmitting to a surface to be processed of the semiconductor device 102; and an ultraviolet reflecting mirror 104, where the ultraviolet reflecting mirror 104 and the spectroscope 103 are disposed at the same horizontal position, and configured to receive the ultraviolet light reflected by the spectroscope 103, and then reflect and cover the ultraviolet light to the surface to be processed of the semiconductor device 102, and a dotted arrow in fig. 1 indicates a light path direction.
In an embodiment, as shown in fig. 1, the lateral cross section of the ultraviolet reflective mirror 104 is a curved surface, and a concave surface of the curved surface faces the beam splitter 103 and the semiconductor device 102, in which case the ultraviolet reflective mirror 104 is a concave mirror and can better reflect ultraviolet light.
The ultraviolet reflector 104 may further have a rotating shaft 1041, and the arc surface rotates around the rotating shaft 1041 to adjust a setting angle of the ultraviolet reflector 104 so as to adjust a light intensity distribution of ultraviolet light reflected to the surface to be processed of the semiconductor device 102.
In a preferred embodiment, with continuing reference to fig. 1, the present invention provides a UV irradiation apparatus for semiconductor processing, further comprising: a parallel light beam splitter or light intensity homogenizing modulator 105 disposed between the UV light source 101 and the beam splitter 103 to make the light irradiated from the UV light source 101 to the beam splitter 103 parallel or uniform in light intensity.
It is easy to understand that fig. 1 is a cross-sectional view of the structure of the UV irradiation apparatus, and the spatial arrangement of the components in the irradiation apparatus will be described with reference to the following embodiments.
With continued reference to fig. 1, in one embodiment, the UV light source 101 may include two UV lamps disposed in parallel, and the length of the UV lamps is not less than the width of the semiconductor device in the corresponding direction of the surface to be processed. For example, the UV lamp tube may be 300mm in length from the diameter of the wafer to be processed.
Further preferably, the beam splitter 103 is a triangular prism bar having a length corresponding to the length of the UV lamp tube, for example, 300mm. As shown in fig. 1, two inclined planes of the triangular prism respectively face to two UV lamps, and a bottom surface facing to the lower direction is parallel to the surface to be processed of the semiconductor device and covers the irradiation range of the two UV lamps.
In one embodiment, the inclined surface of the beam splitter 103 is preferably provided with a coated reflective layer for increasing the reflection of the ultraviolet light and the transmission of the infrared light. For example, the coating reflective layer may be made of hafnium oxide or aluminum oxide material, so that the two inclined planes can reflect the ultraviolet light in the UV lamp tube to the side UV reflector 104, thereby achieving the maximum utilization of the ultraviolet light.
And light in other wave bands, such as infrared rays, in the UV lamp tube can transmit through the two inclined planes and then be blocked by the infrared blocking layer arranged on the bottom surface. For example, the bottom surface can be made of a metal material, so that infrared rays in the light source are absorbed, heat generated by the infrared rays is blocked in a designated non-important area, such as the bottom surface baffle, and the problem that the process temperature is influenced due to the fact that the infrared rays irradiate the wafer to generate an unexpected heat effect is solved, and the problem that the temperature in the cavity is unstable due to the fact that the light source contains the infrared rays is solved.
Meanwhile, in the preferred embodiment, the ultraviolet reflecting mirror 104 may be two bar-shaped arc panels respectively facing two slopes of the triangular bar prism upward, and the length of the bar-shaped arc panels corresponds to the triangular bar prism, which may be 300mm, for example.
A rotating shaft 1041 is disposed in the middle of the strip-shaped arc panel along the extending direction, and the strip-shaped arc panel rotates around the rotating shaft 1041 to adjust the setting angle of the two ultraviolet reflectors 104, so as to adjust the light intensity distribution of the ultraviolet light reflected to the surface to be processed of the semiconductor device 102. For example, the light intensity distribution of the central area and the edge area of the silicon wafer can be adjusted by adjusting the angle of the cambered plate, so that the light intensity can be adjusted according to the process requirement in a targeted manner.
Besides, in the preferred embodiment, the UV irradiation apparatus for semiconductor process provided by the present invention may further include: two parallel light splitters or light intensity homogenizing modulators 105 are respectively disposed between the two UV lamps and the two inclined planes of the light splitter 103, so that the light beams irradiated by the two UV lamps to the two inclined planes of the light splitter 103 are parallel or the light intensity is uniform. It will be readily appreciated that the two parallel beam splitters or light intensity homogenizing modulators 105 are also elongated and may be correspondingly 300mm in length to accommodate other device components.
In the spatial arrangement form, it is further preferable that all components in the UV irradiation device can rotate around a central position in a horizontal direction to ensure that light intensity irradiated to a surface to be processed of the semiconductor device is uniformly distributed in a circumferential direction, thereby further improving process quality.
It should be noted that the arrangement form of the UV irradiation device in the space is only an exemplary illustration, and is not used to limit the protection scope of the present invention, and actually, the number and the spatial shape of the UV lamp tubes, and the spatial shapes of other matching device components such as the spectroscope and the ultraviolet reflector may also be in other forms, as long as the similar principle can be adopted to filter the infrared light and enhance the reflection of the ultraviolet light by using the light path, and the similar scheme that the targeted adjustment of the illumination area range and the light intensity is realized at the same time can be applied to the UV irradiation device for the semiconductor process provided by the present invention, and all of them should be included in the protection scope of the present invention.
Another aspect of the invention also provides semiconductor processing equipment comprising a UV irradiation device as described in any one of the above. The semiconductor processing equipment can be used for semiconductor processing steps such as photoetching or colloid curing, and the like, which need to be subjected to a UV illumination process.
In one embodiment, the carrier tray on which the semiconductor device is placed is preferably rotatable about a center to ensure that the intensity of light irradiated by the UV irradiation device to the surface to be processed of the semiconductor device is uniformly distributed in the circumferential direction.
That is to say, in the UV irradiation device for semiconductor process or the semiconductor process equipment including the UV irradiation device provided by the present invention, all components in the UV irradiation device may rotate around the central position in the horizontal direction, or the carrier tray on which the semiconductor device is located may rotate around the central position, or both of them may rotate around the central position, so that the light intensity distribution received by the silicon wafer in the circumferential direction may be fully adjusted, different irradiation process requirements may be satisfied, and the quality of the irradiation process may be improved.
The UV irradiation device for the semiconductor process is used for filtering infrared light in an ultraviolet light source and increasing reflection of the ultraviolet light, so that temperature influence of UV light on the surface of a semiconductor device is reduced, temperature factors are completely controlled by the heating plate, influence of the illumination temperature on the process step is reduced, the angle of the reflector can be adjusted, the whole set of irradiation device or the bearing plate where the wafer is located can rotate around the center, a light path system can be adjusted in a targeted mode, uniform irradiation light intensity distribution is obtained, and quality of the illumination process step is improved.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (12)
1. A UV irradiation apparatus for a semiconductor process, comprising:
a UV light source disposed above a semiconductor device to be processed to irradiate a surface to be processed of the semiconductor device in a vertical direction;
the spectroscope is arranged between the UV light source and the semiconductor device and comprises an inclined plane and a bottom surface, the inclined plane and the bottom surface respectively cover the irradiation range of the UV light source, the inclined plane is provided with an ultraviolet reflection layer to reflect ultraviolet light emitted by the UV light source, and the bottom surface is a baffle provided with an infrared blocking layer to block infrared light emitted by the UV light source from transmitting to the surface to be processed of the semiconductor device; and
and the ultraviolet reflecting mirror and the spectroscope are arranged at the same horizontal position, and are configured to receive the ultraviolet light reflected by the spectroscope, reflect the ultraviolet light and cover the surface of the semiconductor device to be processed.
2. The UV irradiation apparatus according to claim 1, wherein the ultraviolet reflecting mirror has a side cross section having a curved surface, a concave surface of the curved surface facing the spectroscope and the semiconductor device, and a rotation axis is further provided on the ultraviolet reflecting mirror, and the curved surface is rotated about the rotation axis to adjust a setting angle of the ultraviolet reflecting mirror and thereby adjust a light intensity distribution of the ultraviolet light reflected to the surface to be processed of the semiconductor device.
3. The UV irradiation apparatus according to claim 1, further comprising:
the parallel light beam splitter or the light intensity homogenization modulator is arranged between the UV light source and the beam splitter so as to enable the light irradiated to the beam splitter by the UV light source to be parallel or the light intensity of each part to be uniform.
4. The UV irradiation apparatus according to claim 1, wherein the UV light source comprises two UV lamps disposed in parallel, and a length of the UV lamps is not less than a width of the semiconductor device in a direction corresponding to a surface to be processed.
5. The UV irradiation apparatus according to claim 4, wherein the beam splitter is a triangular bar prism having a length corresponding to the UV lamps, two inclined surfaces of the triangular bar prism facing upward respectively toward the two UV lamps, and a bottom surface facing downward is parallel to the surface to be processed of the semiconductor device and covers an irradiation range of the two UV lamps.
6. The UV irradiation apparatus of claim 5, wherein the UV reflecting mirror comprises two bar-shaped arc panels which are respectively faced to two inclined planes of the bar-shaped triangular prism upward, the length of the bar-shaped arc panel corresponds to that of the bar-shaped triangular prism, a rotating shaft is provided in the middle along the extending direction, and the bar-shaped arc panel is rotated around the rotating shaft to adjust the setting angles of the two UV reflecting mirrors so as to adjust the light intensity distribution of the UV light reflected to the surface to be processed of the semiconductor device.
7. The UV irradiation apparatus according to claim 5, further comprising:
and the two parallel light beam splitters or the light intensity homogenization modulators are respectively arranged between the two UV lamp tubes and the two inclined planes of the beam splitter, so that the light rays irradiated to the two inclined planes of the beam splitter by the two UV lamp tubes are parallel or the light intensity at each position is uniform.
8. The UV irradiation apparatus according to claim 6, wherein all components in the UV irradiation apparatus are rotatable about a central position in a horizontal direction to ensure uniform distribution of light intensity to the surface to be processed of the semiconductor device in a circumferential direction.
9. The UV irradiation apparatus of claim 1, wherein said inclined surface of said spectroscope is provided with a coated reflective layer for increasing reflection of ultraviolet light and transmission of infrared light.
10. The UV irradiation apparatus according to claim 9, wherein the coated reflective layer is made of hafnium oxide or aluminum oxide material.
11. A semiconductor processing apparatus comprising the UV irradiation device according to any one of claims 1 to 10.
12. The semiconductor processing apparatus according to claim 11, wherein the carrier tray on which the semiconductor device is placed is rotatable about a center to ensure that the intensity of light irradiated from the UV irradiation device to the surface to be processed of the semiconductor device is uniformly distributed in a circumferential direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211598761.2A CN115793411A (en) | 2022-12-12 | 2022-12-12 | UV irradiation device for semiconductor process and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211598761.2A CN115793411A (en) | 2022-12-12 | 2022-12-12 | UV irradiation device for semiconductor process and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115793411A true CN115793411A (en) | 2023-03-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211598761.2A Pending CN115793411A (en) | 2022-12-12 | 2022-12-12 | UV irradiation device for semiconductor process and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115793411A (en) |
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2022
- 2022-12-12 CN CN202211598761.2A patent/CN115793411A/en active Pending
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