CN115792405A - Pulse electric field measuring system and temperature compensation method thereof - Google Patents

Pulse electric field measuring system and temperature compensation method thereof Download PDF

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Publication number
CN115792405A
CN115792405A CN202211446698.0A CN202211446698A CN115792405A CN 115792405 A CN115792405 A CN 115792405A CN 202211446698 A CN202211446698 A CN 202211446698A CN 115792405 A CN115792405 A CN 115792405A
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electric field
semiconductor laser
resistance
temperature
field measurement
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苗建国
王伟
石跃武
崔志同
聂鑫
吴伟
陈伟
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Northwest Institute of Nuclear Technology
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Northwest Institute of Nuclear Technology
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Abstract

The invention provides a pulsed electric field measurement system and a temperature compensation method thereof, and aims to solve the technical problem that the stability of the pulsed electric field measurement system is influenced by the change of the electro-optic conversion efficiency of a laser along with the temperature. The pulse electric field measuring system comprises a pulse electric field measuring circuit, wherein the pulse electric field measuring circuit comprises a monopole antenna, a high-resistance input operational amplifier, a semiconductor laser and a power supply module, and the monopole antenna is sequentially connected with the high-resistance input operational amplifier and the semiconductor laser; the high-resistance input operational amplifier comprises a grounding resistor and a feedback resistor, wherein the grounding resistor and the feedback resistor both adopt negative temperature coefficient thermistors; the monopole antenna is coupled with a space electric field; the high-resistance input operational amplifier is used for converting the high-resistance signal into a low-resistance signal and inputting the low-resistance signal into the semiconductor laser; the power module provides power for the whole pulse electric field measuring circuit. The invention also provides a temperature compensation method of the pulse electric field measurement system.

Description

Pulse electric field measuring system and temperature compensation method thereof
Technical Field
The invention relates to a pulse electric field measuring system, in particular to a pulse electric field measuring system and a temperature compensation method thereof.
Background
Electromagnetic safety is regarded by the country as an important component of the national security strategy. Wherein strong electromagnetic environments such as high altitude electromagnetic pulse (HEMP), high Power Microwave (HPM), ultra wide band electromagnetic pulse (UWB), lightning electromagnetic pulse (LEMP) and the like are important targets of attention for electromagnetic safety. The electromagnetic pulse (EMP) environment has wide spectrum, high field intensity and wide coverage range and threatens various electronic devices. Pulsed electric field measurements are important in the field of electromagnetic pulse (EMP) as an important means of acquiring data. Transient pulsed electric field measurements have been studied for over a half century and form a large number of measurement systems. However, since some problems in measurement persist and the measurement requirements are continuously increased, the research of pulsed electric field measurement technology has been an important direction in the field of electromagnetic pulse research.
Transient electromagnetic pulse signals are typical non-stationary signals, and are represented by a single or a series of pulse signals with fast rising edges, short duration and severe amplitude change in the time domain, and have extremely wide frequency spectrum range in the frequency domain, and time domain waveforms are easy to generate distortion to different degrees in the processes of propagation, radiation, scattering and penetration.
An active integral electric field sensor based on electro-optical integration has been developed into a transient electric field measurement system for mainstream application, and at the present stage, the main research directions in the field are focused on the following aspects:
a. expanding the test bandwidth of the test system;
b. the disturbance effect of a test system on a tested field is reduced;
c. the working reliability of the test system under the complex test environment is improved.
The complicated test environment comprises electromagnetic pulse radiation, temperature, humidity and other conditions, wherein the problem of temperature sensitivity of the pulse electric field measurement system mainly comes from a semiconductor laser in a photoelectric conversion module, when the ambient temperature rises, the luminous efficiency of the laser is reduced, the output light power is reduced, and the conversion coefficient of the measurement system is increased; the ambient temperature is reduced, the luminous efficiency of the laser is increased, the output light power is increased, and the conversion coefficient of the measurement system is reduced.
In the previous research, the APC circuit is added in the electro-optical conversion Module, so that the direct current optical power of the Laser does not change with the temperature, and the stability of the pulsed electric field measurement system in the actual use process is ensured, experiments show that the APC circuit does not affect the normal transmission of the measurement system as long as the frequency of the measurement signal is greater than 200hz, as shown in fig. 3, the PD and the LD are integrated by a currently used Pigtail-type DFB semiconductor Laser (DFB-Pigtail Laser Module), and are connected with an external control circuit through different pins. The butterfly-shaped packaged semiconductor laser with the built-in refrigerator can keep the temperature of the light-emitting part of the laser constant within a certain temperature range, and further keep the electro-optic conversion efficiency and the optical power of the laser stable. However, the laser is expensive, and in the actual use process, the electro-optical integrated pulse electric field measurement system is powered by a battery, so that the laser is high in power and large in power consumption, the battery replacement frequency of the measurement system is increased, and the maintenance cost of the measurement system is increased. And the discharge speed of the battery is increased, so that the output voltage of the battery is accelerated to attenuate, and the uncertainty of the system is increased.
Therefore, the electro-optic conversion efficiency of the laser changes along with the temperature, and the stability of the pulse electric field measurement system is influenced.
Disclosure of Invention
The invention aims to solve the technical problem that the stability of a pulse electric field measurement system is influenced by the change of the electro-optic conversion efficiency of the conventional laser along with the temperature, and provides the pulse electric field measurement system and a temperature compensation method thereof.
To solve the above technical problems, the present invention provides the following technical solutions.
A pulse electric field measurement system comprises a pulse electric field measurement circuit, and is characterized in that:
the pulse electric field measuring circuit comprises a monopole antenna, a high-resistance input operational amplification circuit, a semiconductor laser and a power supply module; the monopole antenna is sequentially connected with the high-resistance input operational amplification circuit and the semiconductor laser;
the high-resistance input operational amplification circuit comprises an operational amplifier, a grounding resistor and a feedback resistor, wherein the non-inverting input end of the operational amplifier is connected with the monopole antenna, the inverting input end of the operational amplifier is grounded through the grounding resistor, and the feedback resistor is connected between the inverting input end and the output end of the operational amplifier; the output end of the operational amplifier is connected with the semiconductor laser; the ground resistor and the feedback resistor both adopt negative temperature coefficient thermistors, and the thermal sensitive index of the ground resistor is higher than that of the feedback resistor;
the monopole antenna is coupled with the space electric field and inputs the electric signal to the high-resistance input operational amplification circuit;
the high-resistance input operational amplification circuit is used for amplifying the high-resistance electric signal, outputting a low-resistance electric signal and inputting the low-resistance electric signal into the semiconductor laser;
the semiconductor laser is used for converting the low-resistance electric signal into an optical signal and transmitting the optical signal to the rear-end optical receiver;
the power module provides power for the monopole antenna, the high-resistance input operational amplification circuit and the semiconductor laser.
Furthermore, the semiconductor laser adopts a tail fiber type DFB semiconductor;
the tail fiber type DFB semiconductor integrates the PD and the LD and is connected with an external control circuit through different pins.
Further, the semiconductor laser transmits the optical signal to the optical receiver through the optical fiber.
The temperature compensation method based on the pulse electric field measurement system is characterized by comprising the following steps of:
1) The pulse electric field measuring circuit utilizes a monopole antenna to couple a space electric field, and inputs an electric signal into the semiconductor laser after being amplified by the high-resistance input operational amplification circuit, and the semiconductor laser converts the electric signal into an optical signal and transmits the optical signal to the rear-end optical receiver;
2) When the ambient temperature rises, the resistance values of the grounding resistor and the feedback resistor are reduced, so that the amplification coefficient of the high-resistance input operational amplifier rises along with the rise of the temperature; meanwhile, the electro-optic conversion coefficient of the semiconductor laser is reduced along with the temperature rise, so that the deviation of the conversion coefficient of the pulse electric field measuring circuit caused by the temperature change is inhibited, and the temperature compensation of the pulse electric field measuring system is realized;
when the ambient temperature is reduced, the resistance values of the grounding resistor and the feedback resistor are increased, so that the amplification coefficient of the high-resistance input operational amplification circuit is reduced along with the reduction of the temperature; meanwhile, the electro-optic conversion coefficient of the semiconductor laser is increased along with the temperature reduction, so that the deviation of the conversion coefficient of the pulse electric field measuring circuit caused by the temperature change is restrained, and the temperature compensation of the pulse electric field measuring system is realized.
Further, in step 1), the conversion coefficient K of the pulsed electric field measurement circuit is:
K=Tr×G;
wherein:
tr is an electro-optic conversion coefficient of the semiconductor laser;
g is the amplification factor of the high-resistance input operational amplifier circuit, G =1+R 1 /R 2 ,R 1 For feedback resistance value, R 2 Is the ground resistance value.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the pulse electric field measurement system, the grounding resistor and the feedback resistor of the high-resistance input operational amplifier are set as the negative temperature coefficient thermistor, so that the temperature deviation of the electro-optic conversion coefficient of the semiconductor laser is compensated when the ambient temperature changes, and the temperature stability of the conversion coefficient of the pulse electric field measurement system is improved.
2. The temperature compensation method for the pulse electric field measurement system is simple and feasible, is modified on the original pulse electric field measurement circuit, and is low in modification cost and remarkable in effect.
Drawings
FIG. 1 is a schematic diagram of a measurement circuit of an embodiment of a pulsed electric field measurement system according to the present invention;
FIG. 2 is a schematic diagram of a follower circuit and an amplifier circuit in an embodiment of a pulsed electric field measurement system according to the present invention (where a is the follower circuit and b is the amplifier circuit);
FIG. 3 is a schematic diagram of a pin connection of a pigtailed DFB semiconductor laser according to an embodiment of the pulsed electric field measurement system of the present invention;
the reference numerals are explained below:
1-monopole antenna, 2-high resistance input operational amplifier circuit, 3-semiconductor laser.
Detailed Description
The invention is further described below with reference to the figures and examples.
The pulse electric field measurement system provided by the invention can offset the influence of the environmental temperature change on the stability of the pulse electric field measurement system. The monopole antenna 1 induces a space electric field to generate induced current, is connected to an integrated operational amplifier to convert a front-end high-resistance electric signal into a low-resistance electric signal and input the low-resistance electric signal into a semiconductor laser 3, the output optical power of the semiconductor laser 3 is influenced by the input current, the electric signal is converted into an optical signal, the optical signal is transmitted to a rear-end optical receiver through an optical fiber, the optical signal is converted into the electric signal, a direct-current component in the signal is filtered, and finally a time domain waveform of a pulse electric field is obtained.
As shown in fig. 1, the pulsed electric field measurement system of the present invention includes a pulsed electric field measurement circuit, where the pulsed electric field measurement circuit includes a monopole antenna 1, a high-resistance input operational amplifier circuit 2, a semiconductor laser 3, and a power module; the monopole antenna 1 is sequentially connected with a high-resistance input operational amplification circuit 2 and a semiconductor laser 3; the high-resistance input operational amplification circuit 2 comprises an operational amplifier, a grounding resistor and a feedback resistor, wherein the non-inverting input end of the operational amplifier is connected with the monopole antenna 1, the inverting input end of the operational amplifier is grounded through the grounding resistor, and the feedback resistor is connected between the inverting input end and the output end of the operational amplifier; the output end of the operational amplifier is connected with a semiconductor laser 3, and the semiconductor laser 3 is a tail fiber type DFB semiconductor laser; the grounding resistor adopts a negative temperature coefficient thermistor, and the value of the grounding resistor is smaller than that of the feedback resistor; the monopole antenna 1 is coupled with a space electric field and inputs an electric signal to the high-resistance input operational amplification circuit 2; the high-resistance input operational amplification circuit 2 is used for amplifying the high-resistance electric signal, outputting a low-resistance electric signal and inputting the low-resistance electric signal into the semiconductor laser 3; the semiconductor laser 3 converts the low-resistance electric signal into an optical signal and transmits the optical signal to a rear-end optical receiver through an optical fiber; the power module provides power for the monopole antenna 1, the high-resistance input operational amplification circuit 2 and the semiconductor laser 3.
The principle of the pulse electric field measuring circuit is as follows: the feedback resistor and the grounding resistor of the high-resistance input operational amplifier 2 in the circuit are replaced by the negative temperature thermistor, when the ambient temperature changes, the amplification factor of the integrated operational amplifier is opposite to the change trend of the electro-optic conversion efficiency of the semiconductor laser 3, and the amplification factor and the change trend are mutually offset, so that the aim of testing the stability of the circuit conversion coefficient relative to the ambient temperature is finally achieved. The conversion coefficient K = Tr multiplied by G of the pulse electric field measuring circuit, wherein Tr is the electro-optic conversion coefficient of the semiconductor laser 3, and G is the amplification factor of the high-resistance input operational amplifier 2. The ambient temperature changes, the electro-optic conversion coefficient of the semiconductor laser 3 changes, and the system conversion coefficient changes, so that the measurement result is influenced. As shown in fig. 2, by changing the follower circuit of the integrated operational amplifier into an amplifier circuit, the amplification factor of the integrated operational amplifier is G =1+R 1 /R 2 Wherein R is 1 For feedback resistance value, R 2 Is the ground resistance value.
The temperature compensation method based on the pulse electric field measurement system is characterized in that:
1) The pulse electric field measuring circuit utilizes the monopole antenna 1 to couple a space electric field, and inputs an electric signal into the semiconductor laser 3 after being amplified by the high-resistance input operational amplification circuit 2, and the semiconductor laser 3 converts the electric signal into an optical signal and transmits the optical signal to the rear-end optical receiver;
2) When the ambient temperature rises, the resistance values of the grounding resistor and the feedback resistor are reduced, so that the amplification coefficient of the high-resistance input operational amplifier 2 rises along with the rise of the temperature; meanwhile, the electro-optic conversion coefficient of the semiconductor laser 3 is reduced along with the temperature rise, and the electro-optic conversion coefficient and the temperature rise are counteracted, so that the deviation of the conversion coefficient of the pulse electric field measurement circuit caused by the temperature change is restrained, and the temperature compensation of the pulse electric field measurement system is realized;
when the ambient temperature is reduced, the resistance values of the grounding resistor and the feedback resistor are increased, so that the amplification coefficient of the high-resistance input operational amplification circuit 2 is reduced along with the reduction of the temperature; meanwhile, the electro-optic conversion coefficient of the semiconductor laser 3 is increased along with the temperature reduction, and the electro-optic conversion coefficient and the temperature reduction are counteracted, so that the deviation of the conversion coefficient of the pulse electric field measuring circuit caused by the temperature change is restrained, and the temperature compensation of the pulse electric field measuring system is realized.
In the step 1), the conversion coefficient K of the pulse electric field measurement circuit is:
K=Tr×G;
wherein:
tr is an electro-optic conversion coefficient of the semiconductor laser 3;
g is the amplification factor of the high-impedance input operational amplifier 2, G =1+R 1 /R 2 ,R 1 For feedback resistance value, R 2 Is the ground resistance value.
The negative temperature coefficient thermistor adopted in the invention is an NTC thermistor,
the general formula of calculation: r T =R 0 ·exp[B·(1/T-1/T 0 )]
Wherein R is T Is NTC thermistor resistance value at temperature T, R 0 Is shown at temperature T 0 The resistance value of the NTC thermistor is shown, and B is a thermal sensitive index;
as above, the feedback resistance and the ground resistance can be expressed as:
feedback resistance:
Figure BDA0003949795140000061
wherein
Figure BDA0003949795140000062
Is a temperature T 0 Time feedback resistance R 1 The resistance value of (1);
grounding resistance:
Figure BDA0003949795140000063
wherein
Figure BDA0003949795140000064
Is a temperature T 0 Time ground resistance R 2 The resistance value of (1);
substituting the expression of the feedback resistance and the grounding resistance into G =1+R 1 /R 2 Then, there are:
G=1+A·exp[ΔB·(1/T-1/T o )];
wherein the content of the first and second substances,
Figure BDA0003949795140000065
in order to realize temperature compensation of the conversion coefficient of the measurement system, the following requirements are generally required:
Figure BDA0003949795140000066
finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same, and it is obvious for a person skilled in the art to modify the specific technical solutions described in the foregoing embodiments or to substitute part of the technical features, and these modifications or substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions protected by the present invention.

Claims (5)

1. The utility model provides a pulsed electric field measurement system, includes pulsed electric field measurement circuit, its characterized in that:
the pulse electric field measuring circuit comprises a monopole antenna (1), a high-resistance input operational amplification circuit (2), a semiconductor laser (3) and a power supply module; the monopole antenna (1) is sequentially connected with a high-resistance input operational amplifier circuit (2) and a semiconductor laser (3);
the high-resistance input operational amplification circuit (2) comprises an operational amplifier, a grounding resistor and a feedback resistor, wherein the non-inverting input end of the operational amplifier is connected with the monopole antenna (1), the inverting input end of the operational amplifier is grounded through the grounding resistor, and the feedback resistor is connected between the inverting input end and the output end of the operational amplifier; the output end of the operational amplifier is connected with a semiconductor laser (3); the ground resistor and the feedback resistor both adopt negative temperature coefficient thermistors, and the heat sensitivity index of the ground resistor is higher than that of the feedback resistor;
the monopole antenna (1) is coupled with a space electric field and inputs an electric signal to the high-resistance input operational amplification circuit (2);
the high-resistance input operational amplification circuit (2) is used for amplifying the high-resistance electric signal, outputting a low-resistance electric signal and inputting the low-resistance electric signal into the semiconductor laser (3);
the semiconductor laser (3) is used for converting the low-resistance electric signal into an optical signal and transmitting the optical signal to the rear-end optical receiver;
the power module provides power for the monopole antenna (1), the high-resistance input operational amplification circuit (2) and the semiconductor laser (3).
2. The pulsed electric field measurement system of claim 1, wherein:
the semiconductor laser (3) adopts a tail fiber type DFB semiconductor laser.
3. The pulsed electric field measurement system of claim 2, wherein:
the semiconductor laser (3) transmits the optical signal to the optical receiver through an optical fiber.
4. A method for temperature compensation of a pulsed electric field measurement system according to any one of claims 1 to 3, comprising the steps of:
1) the pulse electric field measuring circuit utilizes a monopole antenna (1) to couple a space electric field, and inputs an electric signal into a semiconductor laser (3) after being amplified by a high-resistance input operational amplification circuit (2), and the semiconductor laser (3) converts the electric signal into an optical signal and transmits the optical signal to a rear-end optical receiver;
2) When the ambient temperature rises, the resistances of the grounding resistor and the feedback resistor are reduced, so that the amplification coefficient of the high-resistance input operational amplifier (2) is increased along with the rise of the temperature; meanwhile, the electro-optic conversion coefficient of the semiconductor laser (3) is reduced along with the temperature rise, so that the shift of the conversion coefficient of the pulse electric field measurement circuit caused by the temperature change is inhibited, and the temperature compensation of the pulse electric field measurement system is realized;
when the ambient temperature is reduced, the resistance values of the grounding resistor and the feedback resistor are increased, so that the amplification coefficient of the high-resistance input operational amplification circuit (2) is reduced along with the reduction of the temperature; meanwhile, the electro-optic conversion coefficient of the semiconductor laser (3) is increased along with the reduction of the temperature, so that the deviation of the conversion coefficient of the pulse electric field measurement circuit caused by the temperature change is restrained, and the temperature compensation of the pulse electric field measurement system is realized.
5. The temperature compensation method of the pulsed electric field measurement system according to claim 4, characterized in that:
in the step 1), the conversion coefficient K of the pulse electric field measurement circuit is as follows:
K=Tr×G;
wherein:
tr is an electro-optic conversion coefficient of the semiconductor laser (3);
g is the amplification factor of the high-resistance input operational amplification circuit (2), G =1+R 1 /R 2 ,R 1 For feedback resistance value, R 2 Is the value of the ground resistance.
CN202211446698.0A 2022-11-18 2022-11-18 Pulse electric field measuring system and temperature compensation method thereof Pending CN115792405A (en)

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