CN115781518A - Polishing cloth finishing process - Google Patents
Polishing cloth finishing process Download PDFInfo
- Publication number
- CN115781518A CN115781518A CN202211230297.1A CN202211230297A CN115781518A CN 115781518 A CN115781518 A CN 115781518A CN 202211230297 A CN202211230297 A CN 202211230297A CN 115781518 A CN115781518 A CN 115781518A
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- Prior art keywords
- cloth
- finishing
- trimming
- carrying
- polishing
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- 239000004744 fabric Substances 0.000 title claims abstract description 75
- 238000005498 polishing Methods 0.000 title claims abstract description 59
- 238000007730 finishing process Methods 0.000 title claims abstract description 7
- 238000009966 trimming Methods 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims abstract description 16
- 238000005406 washing Methods 0.000 claims abstract description 14
- 238000012790 confirmation Methods 0.000 claims abstract description 8
- 230000003746 surface roughness Effects 0.000 claims abstract description 7
- 238000005096 rolling process Methods 0.000 claims abstract description 6
- 230000000694 effects Effects 0.000 claims abstract description 5
- 238000003825 pressing Methods 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 235000012431 wafers Nutrition 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims 1
- 238000007517 polishing process Methods 0.000 abstract description 7
- 230000007547 defect Effects 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 4
- 239000000126 substance Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a polishing cloth finishing process, which belongs to the technical field of silicon wafer processing processes and comprises the following operation steps: the first step is as follows: the new polishing cloth is flatly pasted on polishing equipment, the cloth is punctured before being pasted with the cloth, and rolling is uniformly carried out by using the rolling needle to prevent bubbles from being generated during pasting with the cloth. The second step is that: and pressing the cloth after the cloth is pasted. The third step: and after the cloth is pasted, finishing the new cloth for the first time, and after finishing, washing the new cloth at high pressure. The fourth step: and (5) carrying out secondary trimming, carrying out high-pressure washing after finishing trimming, then carrying out parameter confirmation, and then carrying out trimming effect confirmation. The fifth step: and carrying out third trimming, and carrying out high-pressure washing after finishing trimming. And a sixth step: and (4) carrying out intermediate finishing on the silicon wafer in the continuous processing process, and repairing the surface roughness of the polishing cloth. Has the advantages of good operation stability and long service life. The problem of the scratch appears easily in the polishing process is solved. Avoid the polished section to appear surface defects such as orange peel, fog, sintering.
Description
Technical Field
The invention relates to the technical field of silicon wafer processing technologies, in particular to a polishing cloth finishing technology.
Background
At present, the characteristic line width of the super-large scale integrated circuit manufacturing technology is further miniaturized, higher requirements are put forward on the planarization degree of the surface of a silicon wafer, and the traditional single-side polishing cannot meet the requirements; the double-sided chemical mechanical polishing (DSP) is developed on the basis of the original single-sided chemical mechanical polishing (SSP), the back and the front of the silicon wafer are simultaneously subjected to chemical mechanical polishing in the whole processing process, and the front and the back of the polished silicon wafer are simultaneously mirror surfaces, so that the silicon wafer with better integral and local flatness than the traditional single-sided chemical mechanical polishing can be obtained
Polishing is a process of combined action of chemical reaction and mechanical grinding, and in order to obtain a good-quality polished wafer, the two actions must be balanced in the whole polishing process. The parameters relating to the mechanical action are: polishing pressure, polishing rotating speed, granularity and concentration of abrasive, polishing cloth and the like; the dressing of the polishing cloth used for double-sided polishing greatly contributes to the maintenance of the processing stability; because different grinding wheel dressing principles have larger difference and are lack of in-depth research at present, the research on the cloth dressing process of the polishing cloth has greater significance for the current 12-inch DSP process.
The current polishing process uses PU polishing cloth, the main component of the polishing cloth is polyurethane of foaming body fixed telephone, the surface of the polishing cloth not only has micro convex peak with certain density, but also has a plurality of hollow sphere micropores; the surface micro-convex peak is mainly used for supporting abrasive particles in polishing liquid or generating friction with the surface layer of a polishing sheet to directly or indirectly remove the surface material of the silicon wafer; the internal micropores play a role in collecting polished impurities and conveying polishing solution to ensure chemical corrosion; the properties of the polishing pad directly affect the surface quality, planarization capability and polishing rate of the silicon wafer; in the polishing process, along with the increase of the polishing times, the surface of the polishing cloth generates loss under the long-term mechanical and chemical actions with the surface of the silicon wafer, the polishing quality of the silicon wafer is influenced, and the silicon wafer needs to be regularly trimmed; the quality of the subsequent polishing piece and the service life of the polishing cloth are determined by the cloth repairing process.
Disclosure of Invention
The invention mainly solves the defects in the prior art and provides a polishing cloth finishing process which has the advantages of good operation stability and long service life. The problem of scratch appears easily among the polishing process is solved. Avoid the polished section to appear surface defects such as orange peel, fog, sintering.
The technical problem of the invention is mainly solved by the following technical scheme:
a polishing cloth dressing process comprises the following operation steps:
the first step is as follows: the new polishing cloth is flatly attached to polishing equipment, the cloth is punctured before being attached, and rolling is uniformly carried out through a roller needle to prevent bubbles from being generated during cloth attachment.
The second step is that: and pressing cloth after the cloth is adhered, wherein the cloth is pressed under the pressure of 4000daN by a set program for 35-45 min.
The third step: and (3) starting to trim the new cloth after the cloth is pasted, firstly putting four trimming wheels on the polishing cloth, wherein the front surfaces of the four trimming wheels are upward two, the back surfaces of the four trimming wheels are over two, the four trimming wheels are alternately arranged, then starting to perform first trimming, and performing high-pressure washing after the first trimming is finished.
The fourth step: and (3) carrying out secondary trimming, carrying out high-pressure washing after the secondary trimming is finished, then carrying out parameter confirmation, putting a carrier for production processing, carrying out continuous processing on 5 silicon wafers, polishing, and then carrying out trimming effect confirmation to ensure that parameters such as TTV, SFQR and ESFQR are in a target range.
The fifth step: and carrying out third trimming, and carrying out high-pressure washing after the third trimming is finished.
And a sixth step: in the continuous processing process of the silicon wafer, reaction products can be continuously remained and accumulated on the surface of the cloth, meanwhile, fluff on the surface of the cloth can be continuously bent, the surface roughness is reduced, intermediate finishing is carried out in the processing process of the silicon wafer, and the surface roughness of the polishing cloth is repaired.
Preferably, the first trim pressure is set at 150daN for 16min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 3 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
Preferably, the second trim pressure is set at 150daN for 16min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
Preferably, the third trim pressure is set at 150daN for 16min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
Preferably, the pressure of the high-pressure washing is 90Bar, and the time is 5min; the surface finish residue was washed off.
Preferably, the intermediate trim pressure is set at 150daN for 6min; the upper disc rotates clockwise at the rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
Preferably, the number of the grinding wheels between the upper disc and the lower disc is 4, and the grinding wheels are distributed annularly at equal intervals; a plurality of diamonds are annularly distributed at equal intervals on the two end surfaces of the grinding wheel.
The invention can achieve the following effects:
compared with the prior art, the polishing cloth finishing process has the advantages of good operation stability and long service life. The problem of the scratch appears easily in the polishing process is solved. Avoid the polished section to appear surface defects such as orange peel, fog, sintering.
Drawings
FIG. 1 is a schematic diagram of a side view of a polishing cloth conditioner of the present invention.
Fig. 2 is a schematic top view of the grinding wheel of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings.
The embodiment is as follows: as shown in fig. 1 and 2, a dressing process of polishing cloth includes the following steps:
the first step is as follows: the new polishing cloth is flatly pasted on polishing equipment, the cloth is punctured before being pasted with the cloth, and rolling is uniformly carried out by using the rolling needle to prevent bubbles from being generated during pasting with the cloth.
The number of the grinding wheels between the upper disc and the lower disc is 4, and the grinding wheels are distributed annularly at equal intervals; two end faces of the grinding wheel are provided with 8 diamonds which are distributed annularly at equal intervals.
The second step: and pressing cloth after the cloth is adhered, wherein the cloth is pressed under the pressure of 4000daN by a set program for 35-45 min.
The third step: after the cloth is pasted, finishing the new cloth, firstly placing four finishing wheels on the polishing cloth, wherein the front sides of the four finishing wheels are upward and the back sides of the four finishing wheels are over two, placing the four finishing wheels in a crossed manner, and then starting first finishing, wherein the first finishing pressure is set to be 150daN, and the time is 16min; the upper disc rotates clockwise at the rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 3 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min. After finishing the first trimming, performing high-pressure washing at the pressure of 90Bar for 5min; the surface finish residue was washed off.
The fourth step: carrying out second trimming, wherein the pressure of the second trimming is set to be 150daN, and the time is 16min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of the pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min. After finishing the second trimming, performing high-pressure washing under the pressure of 90Bar for 5min; the surface finish residue was washed off. Then, parameter confirmation is carried out, carriers are placed for production processing, and after 5 silicon wafers are continuously processed and polished, finishing effect confirmation is carried out to ensure that parameters such as TTV, SFQR and ESFQR are in a target range;
the fifth step: carrying out third trimming, wherein the third trimming pressure is set to be 150daN, and the time is 16min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min. After finishing the third trimming, performing high-pressure washing under the pressure of 90Bar for 5min; the surface finish residue was washed off.
And a sixth step: in the continuous processing process of the silicon wafer, reaction products can continuously remain and accumulate on the surface of the cloth, meanwhile, fluff on the surface of the cloth can be continuously bent, the surface roughness is reduced, intermediate finishing is carried out in the processing process of the silicon wafer, the intermediate finishing pressure is set to be 150daN, and the time is 6min; the upper disc rotates clockwise at the rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min. And repairing the surface roughness of the polishing cloth.
In summary, the polishing cloth finishing process has the advantages of good operation stability and long service life. The problem of the scratch appears easily in the polishing process is solved. Avoid the polished section to appear surface defects such as orange peel, fog, sintering.
The above description is only an embodiment of the present invention, but the structural features of the present invention are not limited thereto, and any changes or modifications within the scope of the present invention by those skilled in the art are covered by the present invention.
Claims (7)
1. A polishing cloth finishing process is characterized by comprising the following operation steps:
the first step is as follows: firstly, flatly pasting a new polishing cloth on polishing equipment, punching holes in the cloth before pasting the cloth, and uniformly rolling by using a roller pin to prevent bubbles from being generated during pasting the cloth;
the second step: pressing cloth after cloth is pasted, and pressing cloth under 4000daN pressure for 35-45 min by a set program;
the third step: after the cloth is pasted, finishing the new cloth, firstly putting four finishing wheels on the polishing cloth, wherein the front sides of the four finishing wheels are upward and the back sides of the four finishing wheels are over two, alternately putting the four finishing wheels, then starting first finishing, and carrying out high-pressure washing after the first finishing is finished;
the fourth step: carrying out secondary trimming, carrying out high-pressure washing after the secondary trimming is finished, then carrying out parameter confirmation, putting a carrier for production processing, continuously processing 5 silicon wafers, polishing, and then carrying out trimming effect confirmation to ensure that parameters such as TTV, SFQR and ESFQR are in a target range;
the fifth step: carrying out third trimming, and carrying out high-pressure washing after the third trimming is finished;
and a sixth step: in the continuous processing process of the silicon wafer, reaction products can be continuously remained and accumulated on the surface of the cloth, meanwhile, fluff on the surface of the cloth can be continuously bent, the surface roughness is reduced, intermediate finishing is carried out in the processing process of the silicon wafer, and the surface roughness of the polishing cloth is repaired.
2. The polishing cloth dressing process according to claim 1, wherein: setting the first trimming pressure at 150daN for 16min; the upper disc rotates clockwise at the rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 3 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
3. The polishing cloth dressing process according to claim 1, wherein: setting the second trimming pressure at 150daN for 16min; the upper disc rotates clockwise at the rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of the pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
4. The polishing cloth dressing process according to claim 1, wherein: setting the trimming pressure for the third time to be 150daN for 16min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
5. The polishing cloth dressing process according to claim 1, wherein: the pressure of the high-pressure washing is 90Bar, and the time is 5min; the surface finish residues were rinsed off.
6. The polishing cloth dressing process according to claim 1, wherein: setting the intermediate trimming pressure at 150daN for 6min; the upper disc rotates clockwise at a rotating speed of 1 circle/second; the lower disc rotates anticlockwise, and the revolution is 6 circles/second; the flow rate of pure water is 8L/min, and the error of the flow rate of the pure water is +/-2L/min.
7. The polishing cloth dressing process according to claim 2, 3, 4 or 6, wherein: the number of the grinding wheels between the upper disc and the lower disc is 4, and the grinding wheels are distributed annularly at equal intervals; a plurality of diamonds are annularly distributed at equal intervals on the two end surfaces of the grinding wheel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211230297.1A CN115781518B (en) | 2022-10-08 | 2022-10-08 | Polishing cloth dressing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211230297.1A CN115781518B (en) | 2022-10-08 | 2022-10-08 | Polishing cloth dressing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115781518A true CN115781518A (en) | 2023-03-14 |
| CN115781518B CN115781518B (en) | 2024-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211230297.1A Active CN115781518B (en) | 2022-10-08 | 2022-10-08 | Polishing cloth dressing process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117245458A (en) * | 2023-11-16 | 2023-12-19 | 山东有研艾斯半导体材料有限公司 | Silicon wafer middle polishing method, silicon wafer and preparation method thereof |
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| JP2004098264A (en) * | 2002-09-12 | 2004-04-02 | Shin Etsu Handotai Co Ltd | Method for dressing polishing cloth and method for polishing workpiece |
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| DE102013202488A1 (en) * | 2013-02-15 | 2014-09-04 | Siltronic Ag | Process for dressing polishing cloths for simultaneous two-sided polishing of semiconductor wafers |
| US20160199964A1 (en) * | 2015-01-14 | 2016-07-14 | Siltronic Ag | Method for dressing polishing pads |
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| CN206998616U (en) * | 2017-03-21 | 2018-02-13 | 江苏吉星新材料有限公司 | A kind of diamond pellet polishing pad finishing wheel tool |
| DE102016222144A1 (en) * | 2016-11-11 | 2018-05-17 | Siltronic Ag | Apparatus and method for dressing polishing cloths |
| CN111318964A (en) * | 2018-12-13 | 2020-06-23 | 有研半导体材料有限公司 | Processing method for prolonging service life of polishing cloth |
-
2022
- 2022-10-08 CN CN202211230297.1A patent/CN115781518B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004098264A (en) * | 2002-09-12 | 2004-04-02 | Shin Etsu Handotai Co Ltd | Method for dressing polishing cloth and method for polishing workpiece |
| US20050090185A1 (en) * | 2003-09-17 | 2005-04-28 | Sanyo Electric Co., Ltd. | Method of dressing polishing pad and polishing apparatus |
| JP2007253294A (en) * | 2006-03-24 | 2007-10-04 | Konica Minolta Opto Inc | Method for dressing polishing pad |
| US20120028546A1 (en) * | 2010-07-28 | 2012-02-02 | Siltronic Ag | Method and apparatus for trimming the working layers of a double-side grinding apparatus |
| US20120189777A1 (en) * | 2011-01-21 | 2012-07-26 | Siltronic Ag | Method for providing a respective flat working layer on each of the two working disks of a double-side processing apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117245458A (en) * | 2023-11-16 | 2023-12-19 | 山东有研艾斯半导体材料有限公司 | Silicon wafer middle polishing method, silicon wafer and preparation method thereof |
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| Publication number | Publication date |
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| CN115781518B (en) | 2024-10-29 |
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