CN115775849A - Solar cell, preparation method thereof, electroplating device and electroplating system - Google Patents
Solar cell, preparation method thereof, electroplating device and electroplating system Download PDFInfo
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
A solar cell and a preparation method thereof, an electroplating device and an electroplating system belong to the technical field of photovoltaic. When the battery body is electroplated, the first metal layer of the battery body is in conductive connection with the first anode to form a first electroplating loop, and the second metal layer of the battery body is in conductive connection with the second anode to form a second electroplating loop; the power lines generated by the first electroplating loop and the second electroplating loop are isolated from each other. And forming a first metal grid line on the first metal layer through the first electroplating loop, and simultaneously forming a second metal grid line on the second metal layer through electroplating of the second electroplating loop. Because the first electroplating loop and the second electroplating loop are isolated from each other, the probability that the power line of the first electroplating loop bypasses the battery body to the second metal layer can be reduced, the probability that the power line of the second electroplating loop bypasses the battery body to the first metal layer can also be reduced, the probability of bypassing plating can be reduced, and the problem that the plating layers at the first metal layer and the second metal layer are too thin or too thick is solved.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a solar cell, a preparation method of the solar cell, an electroplating device and an electroplating system.
Background
Currently, one of the leading-edge solar photovoltaic technologies is to replace the traditional silver paste printing with a copper interconnection technology. The copper interconnection technology is a scheme of electroplating copper grid lines and tin grid lines on an ITO (TCO) conductive film of the HJT battery to replace screen printing to prepare the grid lines. The technology is the organic integration of HJT battery production and traditional metal plating technology. The copper electrode grid line in the copper interconnection battery piece technology is realized by performing pattern transfer, electroplating, stripping and the like on the photosensitive adhesive.
In the electroplating process, a battery piece to be electroplated needs to be placed in a groove type electroplating machine, and two sides of the battery piece are electroplated at the same time. However, after both sides of the solar cell are plated, the thickness of the plating layer on both sides of the solar cell deviates from the predetermined thickness, which affects the quality of the solar cell.
Disclosure of Invention
The present application aims to provide a solar cell, a preparation method thereof, a plating device and a plating system, so as to partially or completely solve the problem that the thickness deviation of a plating layer of the solar cell is large in the related art.
In a first aspect, an embodiment of the present application provides a method for manufacturing a solar cell, including: a battery body was obtained. The battery body comprises a base material layer, and a first metal layer and a second metal layer which are respectively arranged on two sides of the base material layer. Electroplating: and the first metal layer is electrically connected with the first anode to form a first electroplating loop, and the second metal layer is electrically connected with the second anode to form a second electroplating loop. And the power line generated by the first electroplating loop and the power line generated by the second electroplating loop are isolated from each other. A first metal grid line is formed on the first metal layer through the first electroplating loop, and a second metal grid line is formed on the second metal layer through the second electroplating loop.
The first metal layer and the second metal layer on two sides of the battery body are in one-to-one correspondence with the first anode and the second anode in a conductive connection mode, a first metal grid line can be formed on the first metal layer through the first electroplating loop, and a second metal grid line is formed on the second metal layer through the second electroplating loop.
Because the first electroplating loop and the second electroplating loop are isolated from each other (namely, the power line generated by the first electroplating loop and the power line generated by the second electroplating loop are isolated from each other, the probability that the power line of the first electroplating loop bypasses the battery body to the second metal layer can be reduced, and the probability that the power line of the second electroplating loop bypasses the battery body to the first metal layer can also be reduced), therefore, when the first electroplating loop and the second electroplating loop are used for electroplating on two sides of the battery body, the influence of the first electroplating loop on the electroplating quality of the second metal layer is small, the influence of the second electroplating loop on the electroplating quality of the first metal layer is small, and the deviation of the thickness of the electroplating layer on each surface can be reduced under the condition that the two sides of the battery body are simultaneously electroplated.
In an alternative embodiment of the present application with reference to the first aspect, the substrate layer includes an N-type silicon wafer, and a first intrinsic amorphous silicon layer, an N-type doped layer and a first transparent conductive oxide layer stacked on a first surface of the N-type silicon wafer, and a second intrinsic amorphous silicon layer, a P-type doped layer and a second transparent conductive oxide layer stacked on a second surface of the N-type silicon wafer. The first metal layer is disposed on the first transparent conductive oxide layer, and the second metal layer is disposed on the second transparent conductive oxide layer. The first current density of the first electroplating loop is smaller than the second current density of the second electroplating loop, so that electroplating layers with different volumes are formed on the first metal layer and the second metal layer simultaneously.
In an alternative embodiment of the present application in combination with the first aspect, the first current density is smaller than the second current density, so that plating layers having different areas and the same thickness are formed on the first metal layer and the second metal layer at the same time.
In the implementation process, the current density of the first electroplating loop formed by the first metal layer arranged on the N surface (the surface close to the N-type doped layer) of the battery body is smaller than the current density of the second electroplating loop formed by the second metal layer on the P surface (the surface close to the P-type doped layer) of the battery body, so that the electroplating grid line with the plating layer area or the plating layer thickness larger than the N surface of the battery body can be formed on the P surface of the battery body within the same electroplating time.
With reference to the first aspect, in an alternative embodiment of the present disclosure, the first current density is decreased by 0-5% compared to a theoretical current density value of the first electroplating circuit, and the second current density is increased by 0-5% compared to a theoretical current density value of the second electroplating circuit;
optionally, the theoretical current density value of the first electroplating loop is 5ASD, and the first current density is 4.75-5ASD; the theoretical current density value of the second electroplating loop is 8ASD, and the second current density is 8-8.4ASD;
optionally, the first current density is 4.75-4.85ASD and the second current density is 8.2-8.4ASD.
By adopting the compensation method, compared with the calculated required theoretical current density value, the probability that the power wire of the first electroplating loop is wound and plated to the second electroplating loop can be inhibited by properly reducing the first current density of the first electroplating loop and properly increasing the second current density of the second electroplating loop. When a part of the power line of the second electroplating loop with high current density is wound to the first metal layer to generate winding plating, the loss of the first metal layer caused by the reduction of the first current density on the basis of the reduction of the thickness of the electroplated layer can be compensated. Meanwhile, the probability that the power line generated by the first electroplating loop is wound to the second metal layer to generate winding plating is smaller due to the fact that the first current density is reduced, the probability that the thickness of the electroplating layer of the second metal layer is thicker can be reduced, and the deviation between the thicknesses of the plating layers of the first metal layer and the second metal layer and the theoretical thickness is further reduced.
With reference to the first aspect, in an optional embodiment of the present application, the metal gate line is formed by electroplating the first metal layer and the second metal layer for 300 to 500 seconds at the same time;
optionally, the first metal layer and the second metal layer are electroplated simultaneously for 325-350s.
Electroplating the cell body for 300-500s to simultaneously form grid lines with proper thickness on two surfaces of the cell body, thereby improving the conversion efficiency of the solar cell.
In a second aspect, embodiments of the present application provide a solar cell, which is prepared according to the method for preparing a solar cell provided in the first aspect.
The solar cell prepared by the preparation method of the solar cell provided by the first aspect can simultaneously form the grid lines with different electroplating areas and the same thickness or different electroplating thicknesses and the same area on the front side and the back side of the solar cell, so that the requirements of the solar cell on the density and the thickness of the grid lines in the use process are met, and the conversion efficiency of the solar cell is improved.
In a third aspect, an embodiment of the present application provides an electroplating apparatus, which includes an electroplating bath, a first anode plate and a second anode plate disposed in the electroplating bath, and an insulating plate. The plating bath is used for containing plating solution. The plating bath is provided with a first inner wall and a second inner wall which are opposite, and the first inner wall and the second inner wall are both provided with shielding blocks protruding out of the surfaces of the first inner wall and the second inner wall. The first anode plate and the second anode plate are respectively positioned at two sides of the shielding block. The edge of the insulating plate is used for being connected with the shielding block in a sealing mode, the hollow area in the middle of the insulating plate is used for installing the battery body in a sealing mode, the electroplating bath is divided into two chambers which are isolated from each other, and the two surfaces of the battery body are located on the edges of the two chambers respectively.
The first inner wall and the second inner wall which are opposite to each other of the electroplating bath are respectively provided with the shielding blocks, the edges of the insulating plates used for bearing the battery pieces are respectively connected with the two shielding blocks in a sealing mode, and the edges of the battery pieces are connected with the hollow-out area in the middle of the insulating plates in a sealing mode.
With reference to the third aspect, in an optional embodiment of the present application, a first connecting part and a second connecting part are respectively disposed on two sides of the insulating plate, where the first connecting part is used for being conductively connected to the first metal layer, and the second connecting part is used for being conductively connected to the second metal layer.
The first connecting pieces and the second connecting pieces are arranged on two sides of the insulating plate respectively, and the first metal layers and the second metal layers on two sides of the battery body can be in conductive connection by utilizing the one-to-one correspondence of the first connecting pieces and the second connecting pieces so as to form two independent electroplating loops.
In an alternative embodiment of the present application, in combination with the third aspect, the shielding block has a groove structure, and the edge of the insulating plate is configured to extend into the groove structure.
The shielding block is arranged into a groove structure, and the edge of the insulating plate can be extended into the groove structure so as to divide the electroplating bath into two chambers which are isolated from each other.
In a fourth aspect, an embodiment of the present application provides an electroplating system, which includes the electroplating apparatus provided in the third aspect, a first power supply and a second power supply. The first power supply is used for being connected with the first metal layer and the first anode plate of the battery body to form a first electroplating loop. The second power supply is used for being connected with a second metal layer and a second anode plate of the battery body to form a second electroplating loop.
The first power supply is connected with the first metal layer and the first anode plate of the battery body to form a first electroplating loop, the second power supply is connected with the second metal layer and the second anode plate of the battery body to form a second electroplating loop, and the surface where the first metal layer and the surface where the second metal layer are located of the battery body in the electroplating bath are respectively located in two cavities which are isolated from each other, so that the probability of the power line of the first electroplating loop and the power line of the second electroplating loop around the electroplating can be reduced, and further, the deviation of the thickness of the electroplating layer on each surface can be reduced under the condition that the two sides of the battery body are simultaneously electroplated.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a schematic cross-sectional view of a solar cell;
FIG. 2 is a schematic structural diagram of a prior art tank-type electroplating machine;
FIG. 3 is a schematic cross-sectional view of a prior art trough electroplating machine;
FIG. 4 is a schematic structural diagram of an electroplating apparatus according to an example of the present application;
fig. 5 is a schematic cross-sectional view of an electroplating system provided in an example of the present application.
An icon:
1-an electroplating system; 10-an electroplating device; 11-an electroplating bath; 111-a first inner wall; 112-a second inner wall; 12-a shielding block; 131-a first anode plate; 132-a second anode plate; 14-an insulating plate; 141-a first connector; 142-a second connector; 21-a first power supply; 22-a second power supply.
100-solar cell; 101-a battery body; 1011-a substrate layer; 1012-first metal layer; 1013-a second metal layer; 1021-a first metal gate line; 1022-a second metal grid line.
200-a tank type electroplating machine; 201-a groove body; 202-a clamping plate; 203-a first anode; 204-a second anode; 205-a first electrically conductive member; 206-a second electrically conductive member; d1-a first gap; d2-second gap.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are merely used to more clearly illustrate the technical solutions of the present application, and therefore are only examples, and the protection scope of the present application is not limited thereby.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description of the present application and in the description of the above figures, are intended to cover non-exclusive inclusions.
In the description of the embodiments of the present application, the technical terms "first", "second", and the like are used only for distinguishing different objects, and are not to be construed as indicating or implying relative importance or to implicitly indicate the number, specific order, or primary-secondary relationship of the technical features indicated.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
In the description of the embodiments of the present application, the terms "middle", "bottom", "inside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the embodiments of the present application and simplifying the description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the embodiments of the present application.
In the description of the embodiments of the present application, unless otherwise explicitly stated or limited, the terms "connected" and "fixed" and the like are used in a broad sense, and for example, may be fixedly connected, detachably connected, or integrated; mechanical connection or electrical connection is also possible; either directly or indirectly through intervening media, either internally or in any other relationship. Specific meanings of the above terms in the embodiments of the present application can be understood by those of ordinary skill in the art according to specific situations.
Currently, one of the leading-edge solar photovoltaic technologies is to replace traditional silver paste printing with a copper interconnection technology. The copper interconnection technology is a scheme of electroplating copper grid lines and tin grid lines on an ITO (TCO) conductive film of an HJT battery to replace screen printing for preparing the grid lines. The technology is the organic integration of HJT battery production and traditional metal plating technology. In the copper interconnection cell technology, a copper electrode grid line is realized by performing pattern transfer, electroplating, stripping and the like on photosensitive adhesive.
In the conventional electroplating process, referring to fig. 1 and 2, the battery body 101 to be electroplated needs to be placed in the tank-type electroplating machine 200, and both sides of the battery body 101 are electroplated at the same time.
However, referring to fig. 3, after both sides of the battery body 101 are plated by the conventional electroplating bath 200, the thicknesses of the plating layers on both sides of the battery body 101 deviate from the predetermined thicknesses, which affects the quality of the solar cell 100.
Therefore, the present application provides a method for manufacturing a solar cell 100 to solve the problem of large variation in the thickness of the plating layers on both sides of the cell body 101.
The method for manufacturing the solar cell 100 includes:
s100, obtaining a battery body 101
As shown in fig. 1, the battery body 101 includes a substrate layer 1011, and a first metal layer 1012 and a second metal layer 1013 respectively disposed on two sides of the substrate layer 1011.
The substrate layer 1011 refers to intrinsic amorphous silicon and an N-type amorphous silicon film on the front side of an N-type silicon wafer, and intrinsic amorphous silicon and a P-type amorphous silicon film on the back side of the silicon wafer; and then transparent oxide conductive films are respectively arranged on the N-type amorphous silicon film and the P-type amorphous silicon film.
The present application does not limit the method of preparing the substrate layer 1011, and in one possible embodiment, the substrate layer may be prepared by:
s101, cleaning and texturing
The front side and the back side of the N-type monocrystalline silicon wafer are provided with the suede, so that the reflectivity of light is reduced, and the absorption rate of incident light is improved.
When the textured surface is prepared, the N-type monocrystalline silicon piece can be soaked in alkali liquor, and a plurality of parallel textured surfaces of pyramid structures which are connected in sequence are formed on the two sides of the N-type monocrystalline silicon piece.
Illustratively, a matte layer of 2-8 μm is formed on both sides of an N-type single crystal silicon wafer using an alkaline solution such as NaOH or NaOH.
S102, depositing an amorphous silicon film
And S101, depositing the front suede surface and the back suede surface after cleaning and texturing to form an intrinsic amorphous silicon film, doping phosphorus on the front intrinsic amorphous silicon film, and doping boron on the back intrinsic amorphous silicon film to form a PN junction.
Illustratively, a PECVD method can be adopted to deposit a front intrinsic amorphous silicon film layer with the thickness of 3-6nm on the front surface of the silicon wafer after cleaning and texturing, and deposit a back intrinsic amorphous silicon film layer with the thickness of 3-9nm on the back surface of the silicon wafer.
Illustratively, a phosphorus-doped amorphous silicon layer of 5-10nm is formed on the front intrinsic amorphous silicon film layer, and a boron-doped amorphous silicon layer of 5-15nm is formed on the back intrinsic amorphous silicon film layer.
S103, depositing a transparent conductive oxide layer
The TOC film is deposited on the amorphous silicon film, so that the amorphous silicon film can be protected, the carrier collection efficiency is increased, and the light reflection is reduced.
Illustratively, an ITO transparent conductive film with a thickness of 90-110nm may be deposited on the amorphous silicon film on the front and back sides by a PVD method.
A first metal layer 1012 and a second metal layer 1013 are respectively disposed on two sides of the substrate layer 1011, so as to form a first metal gate line 1021 by electroplating on the first metal layer 1012 and a second metal gate line 1022 by electroplating on the second metal layer 1013.
Further, the present application does not limit how to form the first metal layer 1012 and the second metal layer 1013 on both sides of the substrate layer 1011, and in one possible embodiment, the first metal layer 1012 and the second metal layer 1013 may be prepared by the following method:
s104, depositing a first metal layer 1012 and a second metal layer 1013
And depositing a copper seed layer on the transparent conductive oxide films on the front surface and the back surface so as to form a grid line on the copper seed layer in a subsequent electroplating mode.
Illustratively, a copper seed layer with a thickness of 150-250nm is deposited on the ITO film using a PVD method.
Further, in order to facilitate the subsequent electroplating process, a first metal gate line 1021 with a predetermined pattern is formed on the first metal layer 1012, and a second metal gate line 1022 with a predetermined pattern is formed on the second metal layer 1013, before electroplating, patterned grooves may be respectively prepared on the first metal layer 1012 and the second metal layer 1013, and plating layers are formed in the grooves to obtain the patterned gate lines.
Illustratively, the patterned recesses may be obtained on the first metal layer 1012 and the second metal layer 1013 by:
s105, coating a photosensitive adhesive layer, exposing and developing
And coating photosensitive glue on the copper seed layers on the front surface and the back surface to cover the copper seed layers.
Illustratively, the surface of the copper seed layer exposed after edge covering is completely covered with a layer of photosensitive glue with the thickness of 10-14 μm.
And printing a preset pattern on the photosensitive adhesive film by laser according to a pre-designed grid line pattern. The photosensitive resist is denatured when being irradiated by light, and is distinguished from the unexposed part of the photosensitive resist. And then removing the denatured photosensitive resist by using a developing solution to form a groove with a preset shape.
Illustratively, the photoresist is cleaned with a basic sodium nitrate solution, and the photosensitive photoresist is partially removed to form a trench.
And forming a groove exposing part of the metal seed layer by using the photosensitive resist layer, and forming a grid line in the groove during subsequent electroplating.
Furthermore, in order to avoid the problem that the stability of the metal grid line is affected by the contact of the copper seed layer at the non-groove position with the electroplating solution in the subsequent electroplating process, the battery piece deposited with the copper seed layer can be covered before the photosensitive glue is coated.
The four edges and the side edges of the cell with the deposited copper seed layer are covered, so that the copper seed layer at the edge of the cell can be prevented from contacting with electroplating solution in electroplating operation, and the quality of the metal grid line is improved.
Illustratively, a concave edge covering is formed at the edge of the battery piece by using encapsulation, and the thickness of the edge covering is 8-14 μm.
S200, electroplating
The first metal layer 1012 is conductively connected to the first anode to form a first plating loop. The second metal layer 1013 is conductively connected to the second anode to form a second plating loop. And the power line generated by the first electroplating loop and the power line generated by the second electroplating loop are isolated from each other. While a first metal gate line 1021 is formed by a first plating loop over the first metal layer 1012, and a second metal gate line 1022 is formed by a second plating loop over the second metal layer 1013.
Since the first and second plating circuits are isolated from each other, that is, the power lines generated by the first and second plating circuits are isolated from each other, the power lines of the first plating circuit cannot bypass the battery body 101 to the second metal layer 1013, and the power lines of the second plating circuit cannot bypass the battery body 101 to the first metal layer 1012. Therefore, when the plating is performed on both surfaces of the battery body 101 by the first plating circuit and the second plating circuit at the same time, the first plating circuit has a small influence on the plating quality of the second metal layer 1013 and the second plating circuit has a small influence on the plating quality of the first metal layer 1012, and thus, it is possible to reduce the variation in the plating layer for each surface of the battery body 101 even when the plating on both surfaces of the battery body 101 is performed at the same time.
For example, when the first metal layer 1012 and the second metal layer 1013 are simultaneously plated, the first current density of the first plating loop is smaller than the second current density of the second plating loop, and the difference between the plating thickness of the first metal layer 1012 and the plating thickness of the second metal layer 1013 can be reduced in the case where the plating area of the second metal layer 1013 is larger than the plating area of the first metal layer 1012.
Illustratively, the first current density may be 5ASD and the second current density may be 8ASD.
Furthermore, the present application does not limit how to isolate the electric lines generated by the first electroplating circuit from the electric lines generated by the second electroplating circuit when the first metal grid lines 1021 and the second metal grid lines 1022 are formed on both sides of the battery body 101 by electroplating.
In one possible embodiment, the present application provides an electroplating system 1 to reduce the probability of the power line generated by the first electroplating loop being plated around the second metal layer 1013 and the probability of the power line generated by the second electroplating loop being plated around the first metal layer 1012 when the first metal grid line 1021 and the second metal grid line 1022 are formed on both sides of the battery body 101 by electroplating.
The plating system 1 includes a plating device 10, a first power supply 21, and a second power supply 22. The first anode plate 131 of the electroplating apparatus 10 is connected to the first metal layer 1012 by the first power supply 21 to form a first electroplating loop. A second plating loop is formed by connecting the second anode plate 132 to the second metal layer 1013 using a second power supply 22.
Referring to fig. 4 and 5, the electroplating apparatus 10 includes an electroplating tank 11, a first anode plate 131, a second anode plate 132 and an insulating plate 14 disposed in the electroplating tank. The plating tank 11 is used for containing a plating solution. The plating tank 11 has a first inner wall 111 and a second inner wall 112 opposite to each other, and the first inner wall 111 and the second inner wall 112 are each provided with a shielding block 12 protruding from the surface thereof. The first anode plate 131 and the second anode plate 132 are respectively located on both sides of the shielding block 12. The edge of the insulating plate 14 is used for being connected with the shielding block 12 in a sealing manner, and the hollow area in the middle of the insulating plate 14 is used for installing the battery body 101 in a sealing manner, so as to divide the electroplating tank 11 into two chambers which are isolated from each other, and two surfaces of the battery body 101 are respectively located at the edges of the two chambers.
The plating tank 11 is provided with a shielding block 12 at each of the first inner wall 111 and the second inner wall 112 opposite to each other, and the edges of the insulating plate 14 for carrying the battery body 101 are hermetically connected to the two shielding blocks 12, respectively. Referring to fig. 4 and 5, since the edge of the battery body 101 is hermetically connected to the hollowed-out region in the middle of the insulating plate 14, when the battery body 101 is immersed in the electroplating solution in the electroplating bath 11 by using the insulating plate 14, the insulating plate 14 is in sealing fit with the shielding block 12, and the insulating plate 14 is in sealing fit with the edge of the battery body 101, so that the electroplating bath 11 can be divided into two chambers which are isolated from each other, the surface where the first metal layer 1012 of the battery body 101 is located in one chamber, and the surface where the second metal layer 1013 of the battery body is located in the other chamber, thereby reducing the probability of mutual influence of electric lines generated in the two chambers during the electroplating process, so as to separately control the plating quality of the two surfaces of the battery body 101, reduce the difference between the plating thicknesses of the two surfaces of the battery body 101, and improve the uniformity of the plating thickness.
The plating bath 11 is used for containing a plating solution, the first anode plate 131 (a metal source to be plated, such as a copper plate) and at least part of the cathode (the first metal layer 1012 of the battery body 101) (a part to be plated of the battery body 101 is immersed in the plating solution) are immersed in the plating solution, and cations of a pre-plating metal in the plating solution are deposited on the surface of the exposed first metal layer 1012 of the battery body 101 through the plating action to form a first metal grid line 1021. Meanwhile, at least a part (the part to be plated of the battery body 101) of the second anode plate 132 and the cathode (the second metal layer 1013 of the battery body 101) is immersed in the plating solution, and cations of the pre-plating metal in the plating solution are deposited on the surface of the exposed second metal layer 1013 of the battery body 101 by the plating action, so as to form the second metal grid line 1022.
The specific material of the electroplating bath 11 is not limited in the present application, and relevant personnel can make corresponding selections as required. In some possible embodiments, the material of the electroplating tank 11 may be selected from PP, PVC, PVDF, or the like.
In one possible embodiment, the chamber inside the plating tank 11 is cuboidal to accommodate the placement of the cell body 101. Illustratively, the plating cell 11 includes a rectangular bottom plate, and four rectangular side plates surrounding the bottom plate, wherein two opposing side plates form the second inner wall 112 of the first inner wall 111.
A shielding block 12 is provided at each of the first inner wall 111 and the second inner wall 112 for sealing connection with the edge of the insulating plate 14.
The first anode plate 131 is arranged on one side of the shielding block 12, and the second anode plate 132 is arranged on the other side of the shielding block 12, so that the probability that a power line generated by the first electroplating loop or the second electroplating loop on one side of the shielding block 12 is plated around the edge of the insulating plate 14 to the other side of the insulating plate 14 can be reduced because the edge of the insulating plate 14 is hermetically connected with the shielding block 12.
The application does not limit the specific arrangement form of the shielding block 12, and relevant personnel can make corresponding selections according to needs.
In one possible embodiment, the shielding block 12 is a groove structure, two ends of the insulating plate 14 are embedded into the two groove structures in a one-to-one correspondence manner, and the bottom end of the insulating plate 14 is hermetically connected with the bottom wall of the electroplating tank 11, so that the edge of the insulating plate 14 is hermetically connected with the inner wall of the electroplating tank 11 through the shielding block 12.
Furthermore, in order to reduce the electric power lines generated on the two sides of the insulating plate 14 from passing through between the bottom end of the insulating plate 14 and the bottom wall of the plating tank 11, the bottom wall of the plating tank 11 may be provided with shielding blocks 12 having a groove structure, and the three shielding blocks 12 may be connected in sequence, so that three edges of the insulating plate 14 correspondingly extend into the grooves one by one.
Furthermore, the shielding block 12 may be made of acid and alkali resistant PPH.
The insulating plate 14 is used to fix the battery body 101. In order to facilitate the first metal layer 1012 and the second metal layer 1013 of the battery body 101 fixed on the insulating plate 14 to be respectively located in two chambers of the plating tank 11 for performing plating through corresponding plating loops to obtain the first metal grid line 1021 and the second metal grid line 1022, the middle portion of the insulating plate 14 is provided with a hollow portion for exposing the first metal layer 1012 and the second metal layer 1013, which are required to form a plating layer, to the plating solution on two sides of the shielding block 12.
When the battery body 101 is fixed by the insulating plate 14, the battery body 101 may be embedded in a hollow-out region in the middle of the insulating plate 14. The edge of the battery body 101 is hermetically connected with the hollow area of the insulating plate 14, so as to reduce the probability that the power line generated by the electroplating loops on the two sides of the insulating plate 14 passes through the gap between the insulating plate 14 and the battery body 101.
Further, in order to facilitate the connection of the first metal layer 1012 and the second metal layer 1013 of the battery body 101 fixed to the insulating plate 14 with the first anode plate 131 and the second anode plate 132, respectively, to form the plating circuits independent from each other, in one possible embodiment, the first connecting member 141 and the second connecting member 142 may be provided on both sides of the insulating plate 14, respectively.
The first connecting element 141 is electrically connected to the first metal layer 1012, and the second connecting element 142 is electrically connected to the second metal layer 1013, so as to form a first electroplating loop and a second electroplating loop which are independent of each other.
In some processes for manufacturing the solar cell 100, a first metal gate line 1021 is formed on one surface (N surface) of the solar cell 100 close to the N-type doped layer, and a second metal gate line 1022 is formed on one surface (P surface) of the solar cell 100 close to the P-type doped layer. The number of the gate lines on the P plane is much greater than that of the gate lines on the N plane, that is, the total area of the first metal gate line 1021 is smaller than that of the second metal gate line 1022.
In order to further reduce the total area deviation of the first metal gate line 1021 and the second metal gate line 1022, in one possible embodiment, a compensation method may be adopted to appropriately reduce the first current density with smaller current density and appropriately increase the second current density with larger current density.
According to faraday plating thickness deposition theory, Q = I x t, (Q is the amount of charge plated in coulombs, I is the current required for plating in amperes, and t is the duration of plating in minutes). The electric quantity Q passed by the electroplating circuit corresponds to the thickness of the actually electroplated metal, and the electric quantity is changed by changing the electroplating current I, so that the electroplating thickness is changed.
In this example, "+" compensation is performed on the parameter of the large current density of the P surface, and "-" compensation is performed on the small current density of the N surface. When the power line of the electroplating loop with high current density on the P surface is wound to the N surface, the winding plating is generated on the edge of the N surface, and the possibility that the power line of the N surface is wound to the P surface can be reduced by reducing the current density of the N surface. Meanwhile, the power line on the P surface is plated to the N surface in a winding mode, the defect that the thickness of the plating layer of the N surface is reduced due to the reduction of current density can be compensated, and the deviation degree of the thickness of the plating layers of the N surface and the P surface and the thickness of the needed plating layer can be further reduced.
Illustratively, the first current density is reduced by 0-5% compared to a theoretical current density value of the first plating loop and the second current density is increased by 0-5% compared to a theoretical current density value of the second plating loop.
Illustratively, the theoretical value of the first current density of the first electroplating loop is calculated to be 5ASD and the theoretical value of the second current density of the second electroplating loop is calculated to be 8ASD before compensation. After compensation, the current density of the first electroplating loop and the current density of the second electroplating loop are adjusted, the first current density is adjusted to 4.75-5ASD, and the second current density is adjusted to 8-8.4ASD.
Illustratively, the first current density is adjusted to 4.75ASD and the second current density is adjusted to 8.4ASD.
Further, 325s may be plated at a first current density of 4.75ASD and a second current density of 8.4ASD.
Further, a layer of metal tin may be further electroplated on the surfaces of the first metal grid line 1021 and the second metal grid line 1022 obtained by electroplating, so as to protect the metal grid lines and increase the solderability of the metal grid lines, which is convenient for the connection performance of the subsequent solar cell 100 in a cell module.
S300, post-processing
And removing the film of the electroplated cell in the step S200, and removing the redundant photoresist, the first metal layer 1012 and the second metal layer 1013 in the cell.
Illustratively, the residual photosensitive adhesive on the surface of the battery piece and the side encapsulation are removed by using a sodium hydroxide solution with the concentration of 10-20 g/L. And (3) soaking and removing the metal layer on the ITO surface by using etching back liquid (2.5 g/L sulfuric acid and 10g/L hydrogen peroxide).
Furthermore, light injection can be carried out on the cell piece obtained after membrane removal and etching back, and the conversion efficiency of the cell can be improved.
Illustratively, the laser irradiation is carried out on the cell piece for 60-120S under the temperature condition of 200-220 ℃.
Further, the present example provides a solar cell 100 using the above fabrication method. The number of the grid lines on the P surface of the solar cell 100 is more than that of the grid lines on the N surface, and the plating thickness on the P surface is similar to that on the N surface.
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are conventional products which are not indicated by manufacturers and are commercially available.
Example 1
The embodiment 1 of the present application provides a solar cell 100, which is prepared by using the electroplating system 1 provided by the present example and the following preparation method:
the battery body 101 is inserted into a hollow area in the middle of the insulating plate 14, and the edge of the insulating plate 14 is inserted into the shielding block 12 of the groove structure in the electroplating bath 11, so that the first metal layer 1012 of the battery body 101 is located at the edge of one chamber of the electroplating bath 11, and the second metal layer 1013 of the battery body 101 is located at the edge of the other chamber of the electroplating bath 11. The first connection member 141 is electrically connected to the first metal layer 1012 of the battery body 101, and the second connection member 142 is electrically connected to the second metal layer 1013 of the battery body 101. Then connecting the first power supply 21 with the first anode plate 131 and the first connecting piece 141 to form a first electroplating loop; a second power source 22 is connected to the second anode plate 132 and the second connector 142 to form a second plating loop.
And (3) adjusting the first current density output by the first power supply 21 to be 4.75ASD, adjusting the second current density output by the second power supply 22 to be 8.4ASD, and electroplating for 325s to obtain the cell.
And removing the film of the electroplated battery piece and etching the battery piece again.
Comparative example 1
The comparative example 1 of the present application provides a solar cell 100, which is prepared by using a prior art tank-type electroplating machine 200 and the following preparation method:
the battery body 101 is clamped into the hollow area in the middle of the clamping plate 202, and then the clamping plate 202 is placed into the tank body 201, so that the first metal layer 1012 of the battery body 101 is opposite to the first anode 203 in the tank body 201, and the second metal layer 1013 of the battery body 101 is opposite to the second anode 204 in the tank body 201.
Referring to fig. 3, a first gap D1 is formed between the edge of the clamping plate 202 and the inner wall of the groove 201, and a second gap D2 is formed between the middle of the clamping plate 202 and the edge of the battery body 101.
The first conductive member 205 is conductively connected to the first metal layer 1012 of the battery body 101, and the second conductive member 206 is conductively connected to the second metal layer 1013 of the battery body 101. Then connecting a first power source 21 to the first anode 203 and the first conductive member 205 to form a first plating loop; a second power source 22 is connected to the second anode 204 and the second conductive member 206 to form a second plating loop.
As the first gap D1 is formed between the edge of the clamping plate 202 and the inner wall of the tank 201, and the second gap D2 is formed between the middle of the clamping plate 202 and the edge of the battery body 101, please refer to fig. 3, the power line of the first electroplating loop and the power line of the second electroplating loop pass through the first gap D1 and the second gap D2, and the electroplating occurs.
And (3) adjusting the first current density output by the first power supply 21 to be 5ASD, adjusting the second current density output by the second power supply 22 to be 8ASD, and electroplating for 325s to obtain the cell.
Examples of the experiments
The plating thickness of the battery sheets provided in examples 1 and 2 was measured, and the test results are shown in table 1.
TABLE 1
As a result, as can be seen from table 1, the plating apparatus 10 according to the present example can improve the problem of the non-uniformity of the thickness of the plating layers on both sides of the battery body 101 and reduce the variation in the thickness of the plating layers when plating is simultaneously performed on both sides of the battery body 101.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A method for manufacturing a solar cell, comprising:
obtaining a battery body; the battery body comprises a substrate layer, a first metal layer and a second metal layer, wherein the first metal layer and the second metal layer are respectively arranged on two sides of the substrate layer;
electroplating: electrically connecting the first metal layer with the first anode to form a first electroplating loop; the second metal layer is electrically connected with the second anode to form a second electroplating loop; a power line generated by the first electroplating loop and a power line generated by the second electroplating loop are isolated from each other; and forming a first metal grid line on the first metal layer through the first electroplating loop, and simultaneously forming a second metal grid line on the second metal layer through the second electroplating loop.
2. The method according to claim 1, wherein the substrate layer comprises an N-type silicon wafer, and a first intrinsic amorphous silicon layer, an N-type doped layer and a first transparent conductive oxide layer stacked on a first surface of the N-type silicon wafer, and a second intrinsic amorphous silicon layer, a P-type doped layer and a second transparent conductive oxide layer stacked on a second surface of the N-type silicon wafer;
the first metal layer is disposed on the first transparent conductive oxide layer, and the second metal layer is disposed on the second transparent conductive oxide layer;
the first current density of the first electroplating loop is less than the second current density of the second electroplating loop, so that electroplating layers with different volumes are formed on the first metal layer and the second metal layer simultaneously.
3. The method according to claim 2, wherein the first current density is smaller than the second current density to simultaneously form plating layers having different areas and the same thickness on the first metal layer and the second metal layer.
4. The method of claim 3, wherein the first current density is reduced by 0-5% compared to a theoretical current density value of the first electroplating circuit, and the second current density is increased by 0-5% compared to a theoretical current density value of the second electroplating circuit;
optionally, the theoretical current density value of the first electroplating loop is 5ASD, and the first current density is 4.75-5ASD; the theoretical current density value of the second electroplating loop is 8ASD, and the second current density is 8-8.4ASD;
optionally, the first current density is 4.75-4.85ASD, and the second current density is 8.2-8.4ASD.
5. The method for preparing the solar cell according to claim 4, wherein the metal grid line is formed by electroplating the first metal layer and the second metal layer for 300-500s at the same time;
optionally, the first metal layer and the second metal layer are electroplated simultaneously for 325-350s.
6. A solar cell, characterized in that it is produced according to the method of any one of claims 1 to 5.
7. An electroplating apparatus for carrying out the method for manufacturing a solar cell according to any one of claims 1 to 5, comprising:
the electroplating bath is used for containing electroplating solution; the plating bath has first and second opposing interior walls; the first inner wall and the second inner wall are both provided with shielding blocks protruding out of the surfaces of the first inner wall and the second inner wall;
the first anode plate and the second anode plate are arranged on the electroplating bath and are respectively positioned on two sides of the shielding block;
the edge of the insulating plate is used for being connected with the shielding block in a sealing mode, the hollow-out area in the middle of the insulating plate is used for installing the battery body in a sealing mode, the electroplating bath is divided into two cavities which are isolated from each other, and the two surfaces of the battery body are located on the edges of the two cavities respectively.
8. The electroplating apparatus according to claim 7, wherein a first connecting piece and a second connecting piece are respectively arranged on two sides of the insulating plate, the first connecting piece is used for being in conductive connection with the first metal layer, and the second connecting piece is used for being in conductive connection with the second metal layer.
9. An electroplating apparatus according to claim 7, wherein the shielding block is a groove structure, and the edge of the insulating plate is provided so as to protrude into the groove structure.
10. An electroplating system, comprising:
the plating apparatus as recited in any one of claims 7 to 9;
the first power supply and the second power supply are connected with the first metal layer of the battery body and the first anode plate to form a first electroplating loop; the second power supply is used for being connected with a second metal layer of the battery body and the second anode plate to form a second electroplating loop.
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| CN112458509A (en) * | 2020-11-16 | 2021-03-09 | 苏州太阳井新能源有限公司 | Clamp for electroplating photovoltaic cell |
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| GB255691A (en) * | 1925-10-19 | 1926-07-29 | Wurttembergische Metaliwarenfa | Improvements in electro-plating baths for simultaneously obtaining metallic depositsof various thicknesses |
| US20120199491A1 (en) * | 2008-04-04 | 2012-08-09 | Moses Lake Industries | Methods for electroplating copper |
| JP2014139341A (en) * | 2012-12-11 | 2014-07-31 | Novellus Systems Incorporated | Electric loading vacuum plating cell |
| US20150329985A1 (en) * | 2012-12-20 | 2015-11-19 | Atotech Deutschland Gmbh | Device for vertical galvanic metal, preferably copper, deposition on a substrate and a container suitable for receiving such a device |
| JP2019157199A (en) * | 2018-03-13 | 2019-09-19 | 株式会社カネカ | Substrate holder and plating apparatus for electrode formation |
| TWI707990B (en) * | 2019-10-14 | 2020-10-21 | 捷得寶科技股份有限公司 | Method and equipment for horizontal and double-sided simultaneous electroplating of solar cells |
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