CN115765705A - Drive circuit and radio frequency switch circuit - Google Patents
Drive circuit and radio frequency switch circuit Download PDFInfo
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- CN115765705A CN115765705A CN202211421949.XA CN202211421949A CN115765705A CN 115765705 A CN115765705 A CN 115765705A CN 202211421949 A CN202211421949 A CN 202211421949A CN 115765705 A CN115765705 A CN 115765705A
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Abstract
A kind of drive circuit and radio frequency switch circuit, the drive circuit is suitable for driving the radio frequency switch, the source is suitable for inputting the first mains voltage, or the drain is suitable for inputting the said first mains voltage; the input end of the boost level conversion circuit module is connected with the substrate of the radio frequency switch, and the output end of the boost level conversion circuit module is connected with the grid electrode of the radio frequency switch; the boost level conversion circuit module is suitable for receiving a control signal at an input end of the boost level conversion circuit module, providing a second turn-on voltage to an output end of the boost level conversion circuit module when the control signal is a first turn-on voltage, and providing a second turn-off voltage to an output end of the boost level conversion circuit module when the control signal is a first turn-off voltage; the second turn-on voltage is greater than the first turn-on voltage, the first turn-on voltage is not less than the first power voltage, the second turn-on voltage is greater than the first power voltage, the first turn-on voltage is greater than the first turn-off voltage, and the second turn-off voltage is not greater than the first power voltage and is not less than the first turn-off voltage.
Description
Technical Field
The invention relates to the field of radio frequency switches, in particular to a driving circuit and a radio frequency switch circuit.
Background
The body driving scheme Of SOI (Silicon-On-Insulator), i.e., silicon On Insulator, switching devices is critical to the breakdown voltage and the process FOM (Figure Of Merit). The reasonable body region driving mode is not only beneficial to optimizing the power capability, harmonic wave, insertion loss, isolation and other performances of the radio frequency switch, but also can simplify the circuit design and save the chip area.
Fig. 1 is a driving circuit of a conventional rf switch, the driving circuit including: the radio frequency switch comprises a grid bias resistor Rg, a substrate bias resistor Rb, a source bias resistor Rs, a source channel resistor Rds and an inverter INV, and is used for driving the radio frequency switch Msw.
The first end of the gate bias resistor Rg is suitable for inputting the control signal CT0, and the second end of the gate bias resistor Rg is connected with the gate of the radio frequency switch Msw. The input end of the inverter INV is connected with the first end of the grid bias resistor Rg, the output end of the inverter INV is connected with the first end of the source bias resistor Rs, and the power supply end of the inverter INV is suitable for inputting a first power supply voltage Vdd. A second terminal of source bias resistor Rs is connected to the source of rf switch Msw and a first terminal of source pass resistor Rds. A second terminal of the source-path resistor Rds is connected to the drain of the rf switch Msw. A first terminal of the substrate bias resistor Rb is connected to the substrate of the radio frequency switch Msw, and a second terminal of the substrate bias resistor Rb is adapted to input a ground voltage.
In the working process, the logic module outputs a high-level control signal CT0 to turn on the radio-frequency switch Msw, and the high-level control signal CT0 is equal to the first power supply voltage Vdd; the logic module outputs a low-level control signal CT0 to turn off the radio frequency switch Msw, and the voltage of the low-level control signal CT0 is equal to the ground voltage.
In view of the circuit structure shown in fig. 1, the source, the drain and the gate are dynamically biased, the substrate is fixedly biased to the ground, positive voltage turn-on and negative voltage turn-off control is realized by using relative voltage difference, only positive voltage driving is needed, the circuit is relatively simple, and the power consumption is relatively low. And moreover, by adopting a driving bias method of positive voltage starting and negative voltage stopping, the radio frequency performances such as insertion loss, isolation degree, power processing capability, linearity and the like can be improved.
Fig. 2 is a radio frequency switch circuit formed using the above-described structure. The radio frequency switch circuit includes: a radio frequency switch unit 11, a radio frequency switch unit 12, a radio frequency switch unit 13, a radio frequency switch unit 14, a first radio frequency input/output port RF1, a second radio frequency input/output port RF2, and a third radio frequency input/output port RFC.
In each radio frequency switch unit, besides the radio frequency switch and the driving circuit thereof, two blocking capacitors are also included. Specifically, the radio frequency switch unit 11 includes: a blocking capacitor Cbb1 and a blocking capacitor Cbs1; the radio frequency switch unit 12 includes: a blocking capacitor Cbb2 and a blocking capacitor Cbs2; the radio frequency switch unit 13 includes: a blocking capacitor Cbb3 and a blocking capacitor Cbs3; the radio frequency switch unit 14 includes: a dc blocking capacitance Cbb4 and a dc blocking capacitance Cbs4.
The first RF input/output port RF1 is connected to the RF switch unit 11 through the connection blocking capacitor Cbs1, and is connected to the RF switch unit 13 through the connection blocking capacitor Cbb 3. The second RF input/output port RF2 is connected to the RF switch unit 12 through the connection blocking capacitor Cbs2, and is connected to the RF switch unit 14 through the connection blocking capacitor Cbb 4. The third rf input/output port RFC is connected to the rf switch unit 11 by connecting the dc blocking capacitor Cbb1, and is connected to the rf switch unit 12 by connecting the dc blocking capacitor Cbb 2.
In the prior art, two blocking capacitors are arranged in each radio frequency switch unit to keep the source-drain bias of each radio frequency switch unit dynamically independent and prevent control signals from interfering with each other through the connection of a source or a drain. For example, when the control signal CT11 is input to the rf switch unit 11, the rf switch unit 12 may be affected by the source bias resistance and the source path resistance, so as to interfere with the driving of the rf switch unit 12 by the control signal CT12, and the dc blocking capacitors Cbb1 and Cbb2 may be arranged to avoid the above problem.
However, as shown in fig. 3, the more the dc blocking capacitors are arranged, the larger the insertion loss is introduced, and the insertion loss performance of the radio frequency switch is seriously degraded.
Disclosure of Invention
The invention solves the problems that: the insertion loss caused by the arrangement of the blocking capacitor of the existing radio frequency switch circuit is overlarge.
To solve the above problems, the present invention provides a driving circuit suitable for driving a radio frequency switch. The radio frequency switch includes: gate, substrate, source and drain-source resistance, the drive circuit includes: and the boost level conversion circuit module.
The source is suitable for inputting a first power supply voltage, or the drain is suitable for inputting the first power supply voltage. The input end of the boost level conversion circuit module is connected with the substrate of the radio frequency switch, and the output end of the boost level conversion circuit module is connected with the grid of the radio frequency switch. The boost level conversion circuit module is suitable for receiving a control signal at an input end thereof, providing a second turn-on voltage to an output end thereof when the control signal is a first turn-on voltage, and providing a second turn-off voltage to an output end thereof when the control signal is a first turn-off voltage.
The second turn-on voltage is greater than the first turn-on voltage, the first turn-on voltage is not less than the first power supply voltage, the second turn-on voltage is greater than the first power supply voltage, the first turn-on voltage is greater than the first turn-off voltage, and the second turn-off voltage is not greater than the first power supply voltage and is not less than the first turn-off voltage.
The present invention also provides a radio frequency switch circuit, comprising: and a radio frequency switch unit. The radio frequency switching unit includes: a radio frequency switch and the above-mentioned drive circuit.
Compared with the prior art, the technical scheme of the invention has the following advantages:
the boost level conversion circuit module of the invention introduces a control signal from the substrate of the radio frequency switch, and realizes that the grid voltage of the radio frequency switch dynamically and in phase follows the change of the substrate voltage through the control of the boost level conversion circuit module, thereby driving the radio frequency switch. The invention does not adopt the dynamic bias of the source drain and the grid used in the prior art, thereby reducing the quantity of the blocking capacitor inserted on the source or the drain, simplifying the circuit, saving the area of the blocking capacitor and reducing the insertion loss.
Drawings
FIG. 1 is a schematic diagram of a conventional RF switch driving circuit;
FIG. 2 is a schematic diagram of a conventional RF switch circuit;
FIG. 3 is a graph showing the relationship between blocking capacitance and insertion loss in the prior art;
fig. 4 is a schematic structural diagram of a driving circuit of the rf switch of the present embodiment;
fig. 5 is a schematic structural diagram of the rf switch circuit of the present embodiment;
fig. 6 is a graph showing the relationship between the blocking capacitance and the insertion loss in the present embodiment.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Referring to fig. 4, an embodiment of the present application provides a driving circuit, which is adapted to drive an rf switch M, where the rf switch M includes: gate, substrate, source and drain.
The drive circuit includes: a boost level conversion circuit block 20. The input end of the boost level conversion circuit module 20 is connected to the substrate of the radio frequency switch M, and the output end of the boost level conversion circuit module 20 is connected to the gate of the radio frequency switch M.
The boost level conversion circuit module 20 may receive the control signal CT at its input end, and provide the second start voltage to its output end when the control signal CT is the first start voltage; when the control signal CT is the first turn-off voltage, the second turn-off voltage is provided to the output terminal thereof.
The second turn-on voltage is greater than the first turn-on voltage, the first turn-on voltage is not less than the first power supply voltage Vdd, the second turn-on voltage is greater than the first power supply voltage Vdd, the first turn-on voltage is greater than the first turn-off voltage, and the second turn-off voltage is not greater than the first power supply voltage Vdd and is not less than the first turn-off voltage.
The first turn-on voltage may be equal to a voltage value V of the first power voltage Vdd vdd Equally, the first power voltage Vdd may be an on-chip power voltage of the rf switch M. The second turn-on voltage may be a voltage value V of the first power voltage Vdd vdd Is an integral multiple of, e.g. the second turn-on voltage is the voltage value V of the first supply voltage Vdd vdd Twice as high as the second turn-on voltage of 2V vdd For illustration purposes. The first off voltage may be a ground voltage.
When the control signal CT is V vdd The output end of the boost level conversion circuit module 20 outputs 2 × v vdd So that the substrate of the radio frequency switch M is connected to V vdd Grid of radio frequency switch MAccess 2 v vdd And the radio frequency switch M is turned on.
When the control signal CT is at ground, the output terminal of the boost level conversion circuit module 20 outputs a second off voltage that is greater than or equal to ground and less than or equal to the first power voltage Vdd, such as between ground and V vdd The voltage in between. At the moment, the source electrode or the drain electrode of the radio frequency switch M is connected into V vdd The substrate is connected to the ground voltage, and the gate is connected between the ground voltage and V vdd The voltage in between. Therefore, the gate voltage of the rf switch M is less than the source or drain voltage, and the substrate voltage is also less than the source or drain voltage, resulting in the rf switch M turning off.
When the first starting voltage is larger than the first power supply voltage Vdd, the substrate voltage is larger than the source-drain voltage, and the insertion loss is further reduced by utilizing the substrate bias effect.
Therefore, the implementation adopts the substrate to access the dynamic control signal, and realizes that the grid voltage dynamically and in phase changes along with the substrate voltage through the adjustment of the boost level conversion circuit module, thereby driving the radio frequency switch. In this embodiment, the source-drain and gate dynamic bias shown in fig. 1 is not used, so that the number of the blocking capacitors inserted into the source or the drain is reduced, the circuit is simplified, the area of the blocking capacitors is saved, and the insertion loss is reduced.
Further, the control signal CT is V vdd Or ground voltage, i.e., a positive voltage, drives the rf switch. The first power supply voltage Vdd may be provided by the analog unit 30, and the analog unit 30 generates the second power supply voltage according to the input power AVdd. Voltage value n x V of second power supply voltage vdd Is an integer multiple n of the first power supply voltage Vdd, n being a positive integer. Specifically, the analog unit 30 outputs the voltage value V corresponding to the first power voltage Vdd vdd An equal second supply voltage to the source or drain, and logic cell 40 (n = 1). The control signal CT may be provided by the logic unit 40 operating in the low voltage domain, and the logic unit 40 generates the control signal CT according to the second power voltage. Compared with a negative voltage driving mode, the positive voltage driving mode does not need to arrange an additional complex module, so that a circuit is simplified, and the area of a chip is saved.
The boost level conversion circuit module 20 includes: a first inverter INV1 and a second inverter INV2.
The input end of the first inverter INV1 is connected to the input end of the boost level conversion circuit module 20, and the output end of the first inverter INV1 is connected to the input end of the second inverter INV2. The output end of the second inverter INV2 is connected to the output end of the boost level conversion circuit module 20. The power supply end of the first inverter INV1 and the power supply end of the second inverter INV2 are both suitable for inputting a first voltage V1, and the voltage values of the first voltage V1 and the second turn-on voltage are equal. The first voltage V1 may also be provided by the analog unit 30, and the analog unit 30 outputs a second power voltage having a voltage value multiple of the first power voltage Vdd to the power terminal of the first inverter INV1 and the power terminal of the second inverter INV2 (n.gtoreq.2)
The driving circuit may further include: the circuit comprises a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4.
The input end of the boost level conversion circuit module 20 is connected to the substrate of the radio frequency switch M through the first resistor R1. Specifically, a first end of the first resistor R1 is connected to the substrate of the rf switch M, and a second end of the first resistor R1 is connected to the input end of the boost level converter circuit module 20 and receives the control signal CT.
The output end of the boost level conversion circuit module 20 is connected to the gate of the radio frequency switch M through the second resistor R2. Specifically, a first end of the second resistor R2 is connected to the gate of the rf switch M, and a second end of the second resistor R2 is connected to the output end of the boost level converting circuit module 20.
In this embodiment, the control signal CT is introduced from the substrate of the rf switch M, and a loop is formed between the gate of the rf switch M and the substrate through the boost level conversion circuit module 20, so that the first resistor R1 and the second resistor R2 are inserted into the loop, and the rf signal can be effectively prevented from being transmitted in the loop.
A first power voltage Vdd is input to a first end of the third resistor R3, a second end of the third resistor R3 is connected to a source of the radio frequency switch M, a first end of the fourth resistor R4 is connected to a source of the radio frequency switch M, and a drain of the fourth resistor R4 is connected to a drain of the radio frequency switch M, that is, a source-drain fixed driving signal is adopted.
The present embodiment further provides a radio frequency switch circuit, including: and a radio frequency switch unit. The radio frequency switch unit includes: a radio frequency switch and the above-mentioned drive circuit. The number of the radio frequency switch units may be at least two, and the following description will proceed with taking four radio frequency switch units as an example.
As shown in fig. 5, the radio frequency switching circuit includes: the first radio frequency switch unit 21, the second radio frequency switch unit 22, the third radio frequency switch unit 23, the fourth radio frequency switch unit 24, the first blocking capacitor C1, the second blocking capacitor C2, the third blocking capacitor C3, the first radio frequency signal input/output port RF1, the second radio frequency signal input/output port RF2, and the third radio frequency signal input/output port RFC.
The first radio frequency switch unit 21, the second radio frequency switch unit 22, the third radio frequency switch unit 23 and the radio frequency switch unit 24 all adopt the structure shown in fig. 4, and because a substrate and gate driving mode is adopted, the influence of the control signal among the radio frequency switch units is small, and if the control signal CT21 enters through the substrate of the radio frequency switch in the first radio frequency switch unit 21, the influence on the first radio frequency switch unit 22 connected with the control signal CT is small. Therefore, a blocking capacitor is not required to be arranged on each source electrode and drain electrode, namely, the source electrode or the drain electrode of the radio frequency switch can be directly connected with the source electrode or the drain electrode of other radio frequency switches without passing through the blocking capacitor.
In this case, the rf switch unit can share the dc blocking capacitor connected to the rf signal input/output port, thereby reducing the power consumption of the driving circuit. Specifically, a first end of the blocking capacitor is connected to the radio frequency signal input/output port, and a second end of the blocking capacitor is connected to the at least two radio frequency switch units. And in the radio frequency switch unit connected with the second end of the blocking capacitor, a source electrode or a drain electrode in the radio frequency switch is connected with the second end of the blocking capacitor.
In fig. 5, a first end of the first dc blocking capacitor C1 is connected to the first RF signal input/output port RF1, and a second end of the first dc blocking capacitor C1 is connected to the first RF switch unit 21 and the third RF switch unit 23. The first radio frequency switch unit 21 and the third radio frequency switch unit 23 are both connected to the first radio frequency signal input/output port RF1 through the first dc blocking capacitor C1.
A first end of the second dc blocking capacitor C2 is connected to the second RF signal input/output port RF2, and a second end of the second dc blocking capacitor C2 is connected to the second RF switch unit 22 and the fourth RF switch unit 24. The second RF switch unit 22 and the fourth RF switch unit 24 are both connected to the second RF signal input/output port RF2 through the second dc blocking capacitor C2.
A first end of the third dc blocking capacitor C3 is connected to the third rf signal input/output port RFC, and a second end of the third dc blocking capacitor C3 is connected to the first rf switch unit 21 and the second rf switch unit 22. The first radio frequency switch unit 21 and the second radio frequency switch unit 22 are both connected to a third radio frequency signal input/output port RFC through a third blocking capacitor C3.
In addition, the radio frequency switch circuit may further include: a fourth dc blocking capacitance C4 and a fifth dc blocking capacitance C5. The source or drain of the rf switch in the third rf switch unit 23 is grounded through the fourth dc blocking capacitor C4, and the source or drain of the rf switch in the fourth rf switch unit 24 is grounded through the fifth dc blocking capacitor C5.
The relationship shown in fig. 6 can be obtained by testing the blocking capacitance and the insertion loss of the rf switch circuits shown in fig. 2 and 5 under the same parameters. The solid arcs in fig. 6 represent the present embodiment and the dashed arcs represent the prior art. As can be seen from fig. 6, the present embodiment reduces the insertion loss compared to the prior art.
The inventor verifies that because the source/drain of the radio frequency switch adopts the same fixed driving voltage, the sharing of the blocking capacitor of the radio frequency switch connected with the radio frequency input/output port can be realized, the insertion loss performance can be improved, or the area of the blocking capacitor is saved, the cost is reduced, and the whole capacitor is saved by 37.5%.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A drive circuit adapted to drive a radio frequency switch, the radio frequency switch comprising: gate, substrate, source and drain, characterized in that, the drive circuit includes: a boost level conversion circuit module;
the source is suitable for inputting a first power supply voltage, or the drain is suitable for inputting the first power supply voltage;
the input end of the boost level conversion circuit module is connected with the substrate of the radio frequency switch, and the output end of the boost level conversion circuit module is connected with the grid electrode of the radio frequency switch;
the boost level conversion circuit module is suitable for receiving a control signal at an input end thereof, providing a second turn-on voltage to an output end thereof when the control signal is a first turn-on voltage, and providing a second turn-off voltage to an output end thereof when the control signal is a first turn-off voltage;
the second turn-on voltage is greater than the first turn-on voltage, the first turn-on voltage is not less than the first power supply voltage, the second turn-on voltage is greater than the first power supply voltage, the first turn-on voltage is greater than the first turn-off voltage, and the second turn-off voltage is not greater than the first power supply voltage and is not less than the first turn-off voltage.
2. The driving circuit according to claim 1, wherein the second turn-on voltage is an integer multiple of a voltage value of the first power supply voltage, and the first turn-on voltage is equal to the voltage value of the first power supply voltage.
3. The driving circuit of claim 1, wherein the boost level conversion circuit module comprises: a first inverter and a second inverter;
the input end of the first phase inverter is connected with the input end of the boost level conversion circuit module, and the output end of the first phase inverter is connected with the input end of the second phase inverter;
the output end of the second inverter is connected with the output end of the boost level conversion circuit module;
and the power supply end of the first inverter and the power supply end of the second inverter are both suitable for inputting the second starting voltage.
4. The drive circuit of claim 1, further comprising: a first resistor;
the input end of the boost level conversion circuit module is connected with the substrate of the radio frequency switch through the first resistor.
5. The drive circuit of claim 1, further comprising: a second resistor;
and the output end of the boost level conversion circuit module is connected with the grid of the radio frequency switch through the second resistor.
6. The drive circuit of claim 1, further comprising: a third resistor;
the source inputs the first power supply voltage through the third resistor, or the drain inputs the first power supply voltage through the third resistor.
7. A radio frequency switch circuit, comprising: a radio frequency switch unit;
the radio frequency switch unit includes: a radio frequency switch and a driver circuit as claimed in any one of claims 1 to 6.
8. The radio frequency switching circuit according to claim 7, wherein the number of the radio frequency switching cells is at least two, the radio frequency switching circuit further comprising: the direct current blocking device comprises a direct current blocking capacitor and a radio frequency signal input/output port, wherein a first end of the direct current blocking capacitor is connected with the radio frequency signal input/output port, and a second end of the direct current blocking capacitor is connected with at least two radio frequency switch units.
9. The radio frequency switch circuit according to claim 8, wherein in the radio frequency switch cell connected to the second terminal of the dc blocking capacitance, a source or a drain in the radio frequency switch is connected to the second terminal of the dc blocking capacitance.
10. The radio frequency switching circuit of claim 7, further comprising: an analog unit and a logic unit;
the analog unit is suitable for generating a second power supply voltage according to an input power supply, and the voltage value of the second power supply voltage is an integral multiple of the voltage value of the first power supply voltage;
the logic unit is suitable for generating the control signal according to the first power supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211421949.XA CN115765705A (en) | 2022-11-14 | 2022-11-14 | Drive circuit and radio frequency switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211421949.XA CN115765705A (en) | 2022-11-14 | 2022-11-14 | Drive circuit and radio frequency switch circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115765705A true CN115765705A (en) | 2023-03-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211421949.XA Pending CN115765705A (en) | 2022-11-14 | 2022-11-14 | Drive circuit and radio frequency switch circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115765705A (en) |
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2022
- 2022-11-14 CN CN202211421949.XA patent/CN115765705A/en active Pending
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