CN115755527B - Photoresist without photoinitiator, preparation method thereof and patterning method - Google Patents
Photoresist without photoinitiator, preparation method thereof and patterning method Download PDFInfo
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- CN115755527B CN115755527B CN202211447300.5A CN202211447300A CN115755527B CN 115755527 B CN115755527 B CN 115755527B CN 202211447300 A CN202211447300 A CN 202211447300A CN 115755527 B CN115755527 B CN 115755527B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000000059 patterning Methods 0.000 title claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 32
- 239000001257 hydrogen Substances 0.000 claims abstract description 32
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 27
- 239000003999 initiator Substances 0.000 claims abstract description 24
- 239000002904 solvent Substances 0.000 claims abstract description 18
- 229940126062 Compound A Drugs 0.000 claims abstract description 16
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- -1 hydroxyl compound Chemical class 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims description 34
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 33
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 27
- 238000002156 mixing Methods 0.000 claims description 25
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 238000001259 photo etching Methods 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 12
- 229920002545 silicone oil Polymers 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 7
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 6
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- 229940093475 2-ethoxyethanol Drugs 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 238000010292 electrical insulation Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000011161 development Methods 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract 1
- 238000001035 drying Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Abstract
The invention discloses a photoresist without a light initiator, a preparation method thereof and a patterning method, wherein the photoresist consists of 4-84wt% of silicon-hydrogen bond compound A, 1-86wt% of hydroxyl compound B and 0-91wt% of solvent C according to mass percentage. The photoresist does not need to be additionally added with a photoinitiator, and a cross-linked network is formed by reacting a silicon hydrogen bond with a hydroxyl group through laser induction, so that a pattern is obtained after development, and the method is simple to operate and environment-friendly; meanwhile, the photoresist system containing the siloxane structure has the characteristics of corrosion resistance, oxidation resistance stability, electrical insulation, high temperature resistance and the like.
Description
Technical Field
The invention belongs to the field of femtosecond laser direct writing, and particularly relates to a photoresist without a photoinitiator, a preparation method thereof and a patterning method.
Background
In the femtosecond laser direct writing technology, a femtosecond laser light source is generally used for focusing in a material, so that two-photon or multi-photon absorption occurs in a central area with extremely high photon number density to reach a threshold value of material reaction, the range of polymerization reaction can be effectively controlled, and an ultra-fine and micro nanostructure can be obtained by combining a point-by-point scanning moving mode.
The photoresist is an important influencing factor of the femtosecond laser direct writing technology, and is generally composed of active monomers, a photoinitiator, a solvent and the like, and the photoresist in a photon excitation exposure area has photochemical reaction, so that the solubility of the photoresist in a developing solution is obviously changed, and patterning is realized. The photoinitiator needs to be matched with the system, and a small amount of photoinitiator may be remained after the reaction, so that the application range of the photoinitiator is limited.
The siloxane has the characteristics of corrosion resistance, oxidation resistance stability, electrical insulation, high temperature resistance and the like, can be introduced into a photoresist system, can increase the adhesive force with a substrate, and can be applied to the aspects of microfluidic devices, the field of optical communication, micro-resonator lasers, optical interconnection networks and the like.
Accordingly, there is a need to provide a photoresist without an initiator and a patterning method thereof.
Disclosure of Invention
The invention aims to provide a photoresist without a photoinitiator, a preparation method and a patterning method thereof, aiming at the defects of the prior art.
The aim of the invention is realized by the following technical scheme: the first aspect of the embodiment of the invention provides a photoresist without a light initiator, which comprises 4-84wt% of silicon-hydrogen bond compound A, 1-86wt% of hydroxyl-containing compound B and 0-91wt% of solvent C, wherein the hydroxyl-containing compound B is formed by mixing hydroxyl silicone oil B-1 and one or more of the following B-2, B-3 and B-4 compounds according to any proportion:
wherein, the viscosity of B-1 at room temperature is 30-500cSt, m is a natural number of 5-50, and n is a natural number of 5-200.
Further, the silicon-containing hydrogen bond compound A is formed by mixing one or two of branched-chain hydrogen-containing silicone oil A-1 and terminal hydrogen-containing silicone oil A-2 according to any proportion, and the room temperature viscosity of the silicon-containing hydrogen bond compound A is 20-100cSt.
Further, the solvent C is a solvent formed by mixing one or more of propylene glycol methyl ether acetate, acetone, toluene, methylene dichloride, chloroform, ethanol, isopropanol, 2-ethoxyethanol, 3-methoxy methyl propionate and diethylene glycol diethyl ether according to any proportion.
The second aspect of the embodiment of the invention provides a preparation method of the photoresist without the photoinitiator, wherein the hydroxyl-containing compound B comprises at least one of B-2, B-3 and B-4 compounds, and the preparation method specifically comprises the following steps: firstly, uniformly mixing a silicon-hydrogen bond compound A, a hydroxyl-containing compound B and a solvent C according to a proportion, then filtering with a filter membrane with the aperture of 0.22-0.45 micrometers to remove impurities, and finally obtaining the photoresist without the photoinitiator.
A third aspect of the present invention provides a method for patterning a photoresist without an initiator, where the photoresist is obtained by using the above preparation method, and the method includes the following steps:
(1) Dripping femtosecond laser photoresist based on hydrosilylation reaction on a spin-coating substrate, and spin-coating by using a spin-coating instrument to obtain a photoresist film;
(2) Placing the photoresist film obtained in the step (1) on a photoresist baking device for baking;
(3) Exposing the photoresist by using a femtosecond laser direct writing device;
(4) And immersing the exposed photoresist into a developing solution for developing to obtain a photoetching pattern.
The fourth aspect of the embodiment of the invention provides a preparation method of the photoresist without the photoinitiator, wherein the hydroxyl-containing compound B is hydroxyl silicone oil B-1, and the preparation method specifically comprises the following steps: firstly, mixing a silicon-hydrogen bond compound A and a hydroxyl compound B according to a proportion, then placing the mixture on a roller uniformly mixing instrument, and uniformly mixing to obtain the photoresist without the photoinitiator.
The fifth aspect of the embodiment of the invention provides a patterning method of photoresist without an initiator, wherein the photoresist is obtained by adopting the preparation method, and the method comprises the following steps:
(1) Dropping photoresist without light initiator onto the substrate;
(2) Exposing the photoresist by using a femtosecond laser direct writing device;
(3) And immersing the exposed photoresist into a developing solution for developing to obtain a photoetching pattern.
Further, the wavelength of the femtosecond laser is 500-780nm.
Further, the developing solution is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol according to any proportion, and the developing time is 10-30min.
The photoresist disclosed by the invention has the beneficial effects that no photoinitiator is required to be additionally added, a silicon hydrogen bond and a hydroxyl group are induced to react by using a femtosecond laser through nonlinear two-photon absorption, so that a crosslinked network is formed, a pattern is obtained after development, and the photoresist is simple to operate and environment-friendly; the threshold value and the precision of the photoresist can be adjusted by adjusting the proportion of active groups of different components in the system; the siloxane structure is introduced into a photoresist system, and has the characteristics of corrosion resistance, oxidation resistance stability, electrical insulation, high temperature resistance and the like.
Drawings
FIG. 1 is a SEM image of the lines of a photoresist processed by a femtosecond laser direct-write photoresist according to example 2 of the present invention;
fig. 2 is an SEM image of the photoresist femtosecond laser direct-write photoresist processing of example 2 of the present invention.
Detailed Description
The invention will be further elucidated with reference to examples and figures. The details described in the following examples are intended to be illustrative and not limiting and will assist those skilled in the art in further understanding the invention, but should not be construed to limit the invention in any way. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the basic concept and method of the invention. The drugs and reagents referred to in the examples are commercially available by those skilled in the art through conventional technical means or commercial routes.
The photoinitiator-free photoresist comprises, by mass, 4-84% of a silicon-hydrogen bond-containing compound A, 1-86% of a hydroxyl-containing compound B and 0-91% of a solvent C.
Wherein the silicon-containing hydrogen bond compound A is formed by mixing one or two of branched hydrogen-containing silicone oil A-1 and terminal hydrogen-containing silicone oil A-2 according to any proportion, and the room temperature viscosity of the silicon-containing hydrogen bond compound A is 20-100cSt.
The hydroxyl-containing compound B is formed by mixing hydroxyl silicone oil B-1 and one or more of the following compounds B-2, B-3 and B-4 according to any proportion:
wherein, the viscosity of B-1 at room temperature is 30-500cSt, m is a natural number of 5-50, and n is a natural number of 5-200.
The solvent C is a solvent formed by mixing one or more of propylene glycol methyl ether acetate, acetone, toluene, methylene dichloride, chloroform, ethanol, isopropanol, 2-ethoxyethanol, 3-methoxy methyl propionate and diethylene glycol diethyl ether according to any proportion.
It is worth mentioning that the invention also provides a preparation method and a patterning method of the photoresist without the photoinitiator.
When the hydroxyl-containing compound B comprises at least one of B-2, B-3 and B-4 compounds, the preparation method specifically comprises the following steps: firstly, uniformly mixing a silicon-hydrogen bond compound A, a hydroxyl-containing compound B and a solvent C according to a proportion, then filtering with a filter membrane with the aperture of 0.22-0.45 micrometers to remove impurities, and finally obtaining the photoresist without the photoinitiator.
Correspondingly, the photoresist is prepared according to the method, and the patterning comprises the following steps:
(1) Dripping photoresist without an initiator on a spin-coating substrate, and spin-coating by using a spin-coating instrument to obtain a photoresist film;
(2) Placing the photoresist film obtained in the step (1) on a photoresist baking device for baking;
(3) Exposing the photoresist by using a femtosecond laser direct writing device;
(4) And immersing the exposed photoresist into a developing solution for developing to obtain a photoetching pattern.
Wherein the wavelength of the femtosecond laser is 500-780nm, the developing solution is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol according to any proportion, and the developing time is 10-30min.
In addition, when the hydroxyl-containing compound B is hydroxyl silicone oil B-1, the preparation method specifically comprises the following steps: firstly, mixing a silicon-hydrogen bond compound A and a hydroxyl compound B according to a proportion, then placing the mixture on a roller uniformly mixing instrument, and uniformly mixing to obtain the photoresist without the photoinitiator.
Correspondingly, the photoresist is prepared according to the method, and the patterning comprises the following steps:
(1) Dropping photoresist without light initiator onto the substrate;
(2) Exposing the photoresist by using a femtosecond laser direct writing device;
(3) And immersing the exposed photoresist into a developing solution for developing to obtain a photoetching pattern.
Wherein the wavelength of the femtosecond laser is 500-780nm, the developing solution is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol according to any proportion, and the developing time is 10-30min.
The objects and effects of the present invention will become more apparent from the following detailed description of the photoresist without initiator, the method for preparing the same, and the patterning method according to the embodiments.
Example 1
1g of 100cSt silicon-hydrogen bond-containing compound A-1 and 6g of 450cSt hydroxyl-containing compound B-1 are weighed and placed on a roller mixer to be uniformly mixed, and then the photoresist without a light initiator is obtained.
And (3) dropwise adding the photoresist without the initiator on a substrate, and exposing the photoresist by using a femtosecond laser direct writing device with the wavelength of 532 nm. Immersing the exposed photoresist in toluene developer for 20min, transferring to isopropanol for immersing for 5min, standing and drying to obtain the photoetching pattern.
Example 2
1g of 20cSt of a silicon-hydrogen bond-containing compound A-1 and 0.9g of a hydroxyl-containing compound B-2 were weighed outDissolving in 17.1g propylene glycol methyl ether acetate solvent, mixing uniformly, filtering with a filter membrane to remove impurities, and obtaining the photoresist without the initiator.
And (3) dropwise adding photoresist on the spin-coated substrate, spin-coating by using a photoresist homogenizing instrument to obtain a photoresist film, and then placing the photoresist film on a photoresist baking device for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 525 nm. Immersing the exposed photoresist in propylene glycol methyl ether acetate developing solution for 8min, transferring to isopropanol for 2min, standing and drying to obtain the photoetching pattern. And (3) performing electron microscope scanning on the developed photoetching pattern to obtain electron microscope images as shown in fig. 1 and 2.
Example 3
1g of 80cSt silicon-hydrogen bond-containing compound A-1 and 2.5g of hydroxyl-containing compound B-3 (monomer mole fraction=50%, mn=3000-5000) are weighed, dissolved in 14g of acetone solvent, uniformly mixed, filtered by a filter membrane to remove impurities, and then the photoresist without the initiator is obtained.
And (3) dropwise adding photoresist on the spin-coated substrate, spin-coating by using a photoresist homogenizing instrument to obtain a photoresist film, and then placing the photoresist film on a photoresist baking device for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 700 nm. Immersing the exposed photoresist in acetone developer for 10min, transferring to ethanol for immersing for 2min, standing and drying to obtain the photoetching pattern.
Example 4
1g of 100cSt of a silicon-hydrogen bond-containing compound A-1 and 1.5g of a hydroxyl-containing compound B-4 were weighed outDissolved in 14.2g toluene solventAnd (3) uniformly mixing, and filtering to remove impurities by using a filter membrane to obtain the photoresist without the initiator.
And (3) dropwise adding photoresist on the spin-coated substrate, spin-coating by using a photoresist homogenizing instrument to obtain a photoresist film, and then placing the photoresist film on a photoresist baking device for baking. The photoresist was exposed using a 780nm wavelength femtosecond laser direct writing device. Immersing the exposed photoresist in toluene developer for 8min, transferring to isopropanol for 3min, standing and drying to obtain the photoetching pattern.
Example 5
2g of 30cSt of a silicon-hydrogen bond-containing compound A-2 and 0.3g of a hydroxyl-containing compound B-2 were weighed outDissolving in 20.7g propylene glycol methyl ether acetate solvent, mixing uniformly, filtering with filter membrane to remove impurities, and obtaining the photoresist without initiator.
And (3) dropwise adding photoresist on the spin-coated substrate, spin-coating by using a photoresist homogenizing instrument to obtain a photoresist film, and then placing the photoresist film on a photoresist baking device for baking. The photoresist was exposed using a femtosecond laser direct writing device with a wavelength of 500 nm. Immersing the exposed photoresist in toluene developer for 25min, transferring to isopropanol for 5min, standing and drying to obtain the photoetching pattern.
Example 6
0.3g of 20cSt silicon-hydrogen bond-containing compound A-1, 5g of 20cSt silicon-hydrogen bond-containing compound A-2 and 1.5g of 25cSt unsaturated double bond-containing compound B-1 are weighed and placed on a roller mixer to be uniformly mixed, so as to obtain the photoresist without the initiator.
And (3) dropwise adding the photoresist without the initiator on a substrate, and exposing the photoresist by using a femtosecond laser direct writing device with the wavelength of 525 nm. Immersing the exposed photoresist in propylene glycol methyl ether acetate developing solution for 20min, transferring to isopropanol for immersing for 3min, standing and drying to obtain the photoetching pattern.
Example 7
1g of 100cSt of a silicon-hydrogen bond-containing compound A-2 and 0.3g of a hydroxyl-containing compound B-4 were weighed outDissolving in 11.7g of 3-methoxy methyl propionate solvent, uniformly mixing, and filtering with a filter membrane to remove impurities to obtain the photoresist without the initiator.
And (3) dropwise adding photoresist on the spin-coated substrate, spin-coating by using a photoresist homogenizing instrument to obtain a photoresist film, and then placing the photoresist film on a photoresist baking device for baking. The photoresist was exposed using a 780nm wavelength femtosecond laser direct writing device. Immersing the exposed photoresist in propylene glycol methyl ether acetate developing solution for 13min, transferring to ethanol for immersing for 2min, standing and drying to obtain the photoetching pattern.
It should be understood that the foregoing examples of the present invention are provided merely for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention, and that various other changes and modifications may be made therein by one skilled in the art without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (8)
1. A photoresist without a light initiator, which is characterized by comprising 4-84wt% of silicon-hydrogen bond compound A, 1-86wt% of hydroxyl compound B and 0-91wt% of solvent C, wherein the hydroxyl compound B is formed by mixing hydroxyl silicone oil B-1 and one or more of the following compounds B-2, B-3 and B-4 according to any proportion:
wherein, the viscosity of B-1 at room temperature is 30-500cSt, m is a natural number of 5-50, and n is a natural number of 5-200;
the silicon-containing hydrogen bond compound A is formed by mixing one or two of branched-chain hydrogen-containing silicone oil A-1 and terminal hydrogen-containing silicone oil A-2 according to any proportion, and the room temperature viscosity of the silicon-containing hydrogen bond compound A is 20-100cSt.
2. The photoinitiator-free photoresist according to claim 1, wherein the solvent C is a solvent formed by mixing one or more of propylene glycol methyl ether acetate, acetone, toluene, methylene dichloride, chloroform, ethanol, isopropanol, 2-ethoxyethanol, methyl 3-methoxypropionate and diethylene glycol diethyl ether according to any proportion.
3. A method for preparing the photoinitiator-free photoresist according to claim 1, wherein the hydroxyl-containing compound B comprises at least one of B-2, B-3 and B-4 compounds, and the method specifically comprises the following steps: firstly, uniformly mixing a silicon-hydrogen bond compound A, a hydroxyl-containing compound B and a solvent C according to a proportion, then filtering with a filter membrane with the aperture of 0.22-0.45 micrometers to remove impurities, and finally obtaining the photoresist without the photoinitiator.
4. A method of patterning a photoinitiator-free photoresist obtained by the method of preparation of claim 3, comprising the steps of:
(1) Dripping photoresist without an initiator on a spin-coating substrate, and spin-coating by using a spin-coating instrument to obtain a photoresist film;
(2) Placing the photoresist film obtained in the step (1) on a photoresist baking device for baking;
(3) Exposing the photoresist by using a femtosecond laser direct writing device;
(4) And immersing the exposed photoresist into a developing solution for developing to obtain a photoetching pattern.
5. A method for preparing the photoresist without the initiator according to claim 1, wherein the hydroxyl-containing compound B is hydroxyl silicone oil B-1, and the preparation method specifically comprises the following steps: firstly, mixing a silicon-hydrogen bond compound A and a hydroxyl compound B according to a proportion, then placing the mixture on a roller uniformly mixing instrument, and uniformly mixing to obtain the photoresist without the photoinitiator.
6. A method for patterning a photoresist without an initiator, the photoresist being obtained by the preparation method of claim 5, comprising the steps of:
(1) Dropping photoresist without light initiator onto the substrate;
(2) Exposing the photoresist by using a femtosecond laser direct writing device;
(3) And immersing the exposed photoresist into a developing solution for developing to obtain a photoetching pattern.
7. The method of claim 4 or 6, wherein the femtosecond laser has a wavelength of 500-780nm.
8. The method for patterning photoresist without initiator according to claim 4 or 6, wherein the developing solution is composed of one or more of propylene glycol methyl ether acetate, toluene, acetone, ethanol and isopropanol according to any proportion, and the developing time is 10-30min.
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| CN202211447300.5A CN115755527B (en) | 2022-11-18 | 2022-11-18 | Photoresist without photoinitiator, preparation method thereof and patterning method |
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| US4202742A (en) * | 1979-04-30 | 1980-05-13 | Westinghouse Electric Corp. | Photopolymerization of ethylenically unsaturated monomers |
| JP2004143202A (en) * | 2002-10-22 | 2004-05-20 | Toyo Ink Mfg Co Ltd | Active energy ray curing composition, method for forming cured film using the same and cured product thereof and antireflection body |
| CN104656373A (en) * | 2015-01-08 | 2015-05-27 | 苏州瑞红电子化学品有限公司 | Photosensitizer-free photoresist composition used in glass passivated rectifier chip (GPRC) technology |
| CN112250869A (en) * | 2020-10-23 | 2021-01-22 | 无锡博加电子新材料有限公司 | Single-component hyperbranched polymer UV (ultraviolet) matte resin and preparation method thereof |
| CN114249862A (en) * | 2021-12-30 | 2022-03-29 | 宁波东旭成新材料科技有限公司 | Initiator-free quantum dot ultraviolet curing resin |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60220637T2 (en) * | 2002-03-07 | 2008-03-06 | Dainippon Ink And Chemicals, Inc. | Initiator-free crosslinkable oligomers and polymers |
| JP6634988B2 (en) * | 2016-09-20 | 2020-01-22 | 信越化学工業株式会社 | Transparent liquid silicone rubber composition |
-
2022
- 2022-11-18 CN CN202211447300.5A patent/CN115755527B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202742A (en) * | 1979-04-30 | 1980-05-13 | Westinghouse Electric Corp. | Photopolymerization of ethylenically unsaturated monomers |
| JP2004143202A (en) * | 2002-10-22 | 2004-05-20 | Toyo Ink Mfg Co Ltd | Active energy ray curing composition, method for forming cured film using the same and cured product thereof and antireflection body |
| CN104656373A (en) * | 2015-01-08 | 2015-05-27 | 苏州瑞红电子化学品有限公司 | Photosensitizer-free photoresist composition used in glass passivated rectifier chip (GPRC) technology |
| CN112250869A (en) * | 2020-10-23 | 2021-01-22 | 无锡博加电子新材料有限公司 | Single-component hyperbranched polymer UV (ultraviolet) matte resin and preparation method thereof |
| CN114249862A (en) * | 2021-12-30 | 2022-03-29 | 宁波东旭成新材料科技有限公司 | Initiator-free quantum dot ultraviolet curing resin |
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| CN115755527A (en) | 2023-03-07 |
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