CN115747764A - Atomic layer deposition equipment and method and semiconductor manufacturing system - Google Patents
Atomic layer deposition equipment and method and semiconductor manufacturing system Download PDFInfo
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- CN115747764A CN115747764A CN202111029417.7A CN202111029417A CN115747764A CN 115747764 A CN115747764 A CN 115747764A CN 202111029417 A CN202111029417 A CN 202111029417A CN 115747764 A CN115747764 A CN 115747764A
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses atomic layer deposition equipment, a method and a semiconductor manufacturing system, relates to the technical field of semiconductor devices, and provides the atomic layer deposition equipment which can enable the thicknesses of film layers in all areas on the surface of a wafer to be the same when the film layers are deposited on the wafer. The atomic layer deposition apparatus includes a process chamber, a nozzle assembly, a thickness detector, and a processor in communication with the nozzle assembly and the film layer thickness detector. The nozzle assembly is positioned in the processing chamber and is communicated with the deposition gas source, and the nozzle assembly is arranged opposite to the wafer in the processing chamber. The thickness detector is used for detecting the thicknesses of the films deposited in different areas of the wafer and sending the thicknesses of the films deposited in different areas of the wafer to the controller. The controller is used for controlling the nozzle assembly to provide deposition gases with different flow rates to different areas of the wafer according to the thickness of the film layer deposited in different areas of the wafer.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to an atomic layer deposition apparatus, an atomic layer deposition method, and a semiconductor manufacturing system.
Background
At present, when an atomic layer deposition process is performed by using atomic layer deposition equipment, because of the position of the air inlet of the nozzle in the atomic layer deposition equipment, deposition gas can be sprayed out from one side of the nozzle close to the air inlet, on the basis, the deposition of a film layer can be preferentially performed on the region of the surface of a wafer relative to the air inlet of the nozzle, and then the film layer deposited on the surface of the wafer and the region of the nozzle relative to the air inlet is thicker than other regions, so that the thickness of each region of the surface of the wafer is different, and the yield of the wafer is influenced.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an atomic layer deposition apparatus, a method and a semiconductor manufacturing system, so as to provide an atomic layer deposition apparatus capable of making the film thickness of each region on the wafer surface the same when performing film deposition on the wafer.
In a first aspect, the present invention provides an atomic layer deposition apparatus comprising a process chamber, a nozzle assembly, a thickness detector, and a processor in communication with the nozzle assembly and the film layer thickness detector. The nozzle assembly is positioned in the processing chamber and is communicated with the deposition gas source, and the nozzle assembly is arranged opposite to the wafer in the processing chamber. The thickness detector is used for detecting the thicknesses of the films deposited in different areas of the wafer and sending the thicknesses of the films deposited in different areas of the wafer to the controller. The controller is used for controlling the nozzle assembly to provide deposition gases with different flow rates to different areas of the wafer according to the thickness of the film layer deposited in different areas of the wafer.
Compared with the prior art, the atomic layer deposition equipment provided by the invention comprises: a process chamber, a nozzle assembly, a thickness detector, and a processor in communication with the nozzle assembly and the film thickness detector. In practice, when the atomic layer deposition apparatus is used to deposit a film on a wafer, the nozzle assembly is disposed opposite to the wafer in the processing chamber, so that the nozzle assembly can provide relatively sufficient deposition gas to the wafer, thereby avoiding waste of the deposition gas. Furthermore, the thickness detector is used for detecting the thickness of the film deposited in different areas of the wafer and sending the thickness of the film deposited in different areas of the wafer to the controller. The controller can control the nozzle assembly to provide deposition gases with different flow rates to different areas of the wafer according to the film thickness of the different areas of the wafer. Specifically, in the atomic layer deposition process, when the thickness detector detects that the thickness of a film layer in a certain area of the wafer is smaller than that in other areas, the controller controls the nozzle assembly to provide a larger flow of deposition gas to the area, so as to solve the problem that the thickness of the film layer in the area of the wafer is smaller. In contrast, when the thickness detector detects that the thickness of the film layer in a certain region of the wafer is greater than that in other regions, the controller controls the nozzle assembly to supply a smaller flow rate of the deposition gas to the region to eliminate the problem of the greater thickness of the film layer in the region of the wafer. So that the film layers in all regions of the wafer have the same thickness.
In a second aspect, the present invention provides a semiconductor manufacturing system comprising the atomic layer deposition apparatus described above.
In a third aspect, the present invention provides an atomic layer deposition method comprising: acquiring the thickness of the film layer deposited in different areas of the wafer detected by the thickness detector; and controlling the nozzle assembly to provide process gases with different flow rates to different areas of the wafer according to the thickness of the film layer deposited in different areas of the wafer.
The beneficial effects of the second aspect and the third aspect are the same as the beneficial effects of the atomic layer deposition apparatus provided by any possible implementation manner of the first aspect, and are not described herein again.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not limit the invention. In the drawings:
FIG. 1 is a schematic diagram of an atomic layer deposition apparatus according to the prior art;
FIG. 2 is a schematic structural diagram of an atomic layer deposition apparatus according to an embodiment of the present invention;
fig. 3 is a flowchart illustrating steps of an atomic layer deposition method according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Various schematic diagrams of embodiments of the invention are shown in the drawings, which are not drawn to scale. Wherein certain details are exaggerated and possibly omitted for clarity of understanding. The shapes of the various regions, layers and their relative sizes, positional relationships are shown in the drawings as examples only, and in practice deviations due to manufacturing tolerances or technical limitations are possible, and a person skilled in the art may additionally design regions/layers with different shapes, sizes, relative positions according to the actual needs.
In the following, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.
In addition, in the present invention, the directional terms "upper", "lower", etc. are defined relative to the schematically disposed directions of the components in the drawings, and it should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and may be changed correspondingly according to the change in the disposed directions of the components in the drawings.
In the present invention, unless expressly stated or limited otherwise, the term "coupled" is to be interpreted broadly, e.g., "coupled" may be fixedly coupled, detachably coupled, or integrally formed; may be directly connected or indirectly connected through an intermediate.
Currently, referring to fig. 1, when an atomic layer deposition process is performed by using an atomic layer deposition apparatus, since the position of the gas inlet 104 of the nozzle 103 is close to one side of the nozzle, deposition gas may be sprayed from the gas inlet 104 side of the nozzle 103, based on which, the deposition of the film layer 102 may be preferentially performed on the region of the surface of the wafer 101 opposite to the gas inlet 104 of the nozzle, and further, the film layer 102 deposited on the region of the surface of the wafer 101 opposite to the gas inlet 104 of the nozzle 103 is thicker than other regions, so that the thicknesses of the film layers 102 deposited on the regions of the surface of the wafer 101 are different, thereby affecting the yield of the wafer 101.
In view of this, referring to fig. 2, an atomic layer deposition apparatus is shown including a process chamber 201, a nozzle assembly 202, a thickness detector, and a processor in communication with the nozzle assembly 202 and the film layer thickness detector in accordance with an embodiment of the present invention. The nozzle assembly is located within the processing chamber 201 and is in communication with a deposition gas source 205. A deposition gas source 205 is used to provide deposition gas to the nozzle assembly 202, and the nozzle assembly 202 is used to spray the deposition gas provided by the deposition gas source 205 onto the wafer 203, wherein the wafer 203 is located in the processing chamber and on a wafer chuck 204, and the wafer chuck 204 is used to hold the wafer.
Referring to fig. 2, since the nozzle assembly 202 is disposed opposite to the wafer 203 in the processing chamber 201, the nozzle assembly 202 can provide relatively sufficient deposition gas to the wafer 203, thereby preventing waste of the deposition gas.
In an embodiment of the present invention, a thickness detector (not shown in FIG. 2) is disposed on the wafer surface. In practice, the atomic layer deposition apparatus may include a plurality of thickness detectors arranged on different regions of the wafer surface for detecting the thickness of the film deposited on the different regions of the wafer. The thickness detector is also used for sending the thickness of the film layer deposited in different areas of the wafer to the controller. Specifically, the thickness detectors may be uniformly disposed on different areas of the wafer surface, so that the detection areas of the thickness detectors may cover the respective areas of the wafer surface.
For example, the thickness detector may be a magnetic thickness gauge or an eddy current thickness gauge, which is not particularly limited in the embodiments of the present invention.
The controller is also used for controlling the nozzle assembly to provide deposition gases with different flow rates to different areas of the wafer according to the film thickness of the different areas of the wafer. Specifically, in the atomic layer deposition process, when the thickness detector detects that the thickness of a film layer in a certain area of the wafer is smaller than that in other areas, the controller controls the nozzle assembly to provide a larger flow of deposition gas to the area, so as to solve the problem that the thickness of the film layer in the area of the wafer is smaller. In contrast, when the thickness detector detects that the thickness of the film layer in a certain region of the wafer is greater than that in other regions, the controller controls the nozzle assembly to supply a smaller flow rate of the deposition gas to the region to eliminate the problem of the greater thickness of the film layer in the region of the wafer. So that the film layers in all regions of the wafer have the same thickness.
Referring to fig. 2, it will be appreciated that in order to achieve that the nozzle assembly 202 can provide different flow rates of deposition gas to different zones, the nozzle assembly 202 in an embodiment of the present invention includes a nozzle body 2021 and a plurality of flow regulators (not shown) in communication with a controller. A plurality of flow regulators are provided at different regions of the nozzle body 2021, and a controller is used to control the flow regulators at different positions of the nozzle body 2021, thereby regulating the flow of the deposition gas at the different regions of the nozzle body 2021.
Illustratively, embodiments of the present invention may include three flow regulators disposed at the first end, the second end, and the middle region of the nozzle body. When the controller acquires that the film thickness of the partial area of the wafer, which is opposite to the first end of the nozzle body, is larger than the film thicknesses of other areas of the wafer, the controller is used for controlling the flow regulators, so that the flow of the deposition gas at the first end of the nozzle body is reduced or the flow of the deposition gas at other areas is increased through the flow regulators.
The Flow regulator may be a Mass Flow Meter (MFM).
In the embodiment of the present invention, the nozzle body has a gas inlet 2022 communicated with the deposition gas source, a spraying channel and a plurality of spraying holes 2023. And the air inlet 2022 and the plurality of spraying holes 2023 are communicated through a spraying passage. The gas inlet 2022 is in communication with the deposition gas source 205, and is configured to provide deposition gas to the nozzle body 2021. The plurality of spraying holes 2023 are uniformly distributed on the nozzle body, and the plurality of spraying holes 2023 are disposed opposite to the wafer 203 in the processing chamber 201 for providing deposition gas to the surface of the wafer 203 to deposit a film on the surface of the wafer 203.
In the embodiment of the present invention, the plurality of spraying holes 2023 may be set to have the same or different size parameters according to the distance from the air inlet. Therefore, the plurality of spraying holes 2023 can provide deposition gas with approximately the same flow rate to different areas of the wafer 203, and further ensure the uniformity of the thickness of the film deposited on the surface of the wafer 203.
It is understood that the present invention may include one air inlet, or may include a plurality of air inlets. Specifically, the at least one air inlet is located at least one of a first end, a second end, and a center position of the nozzle body along a length direction of the nozzle body.
For example, when the nozzle body includes one gas inlet, the gas inlet may be located at the first end of the nozzle body, and at this time, the size parameter of the spray hole is gradually increased in a direction from the first end of the nozzle body to the second end of the nozzle body for uniform spraying of the deposition gas.
For example, when the nozzle body includes one gas inlet, the gas inlet may be located at the second end of the nozzle body, and at this time, the size parameter of the spray hole is gradually increased in a direction from the second end of the nozzle body to the first end of the nozzle body for uniform spraying of the deposition gas.
For example, when the nozzle body includes one gas inlet, the gas inlet may be located at a middle region of the nozzle body, and at this time, the size parameter of the spray hole is gradually increased in a direction from the central region of the nozzle body to the first end of the nozzle body or to the second end of the nozzle body for uniform spraying of the deposition gas.
Specifically, the size parameter of the spraying hole may be the area of the spraying hole. In a direction from the first end of the nozzle body to the second end of the nozzle body, the size parameter of the spray orifice gradually increases to be: the area of the spray hole gradually increases in a direction from the first end of the nozzle body to the second end of the nozzle body. The size parameter of the spray aperture may increase gradually in a direction from the second end of the nozzle body to the first end of the nozzle body as: the area of the spray hole gradually increases in a direction from the second end of the nozzle body to the first end of the nozzle body. The size parameters of the spray holes gradually increase along the direction from the central region of the nozzle body to the first end of the nozzle body or the second end of the nozzle body, and can be as follows: the area of the spray holes is gradually increased along the direction from the central region of the nozzle body to the first end of the nozzle body or the second end of the nozzle body.
The spraying holes may be circular holes, rectangular holes, triangular holes, and other polygonal holes, which are not limited in the practice of the present invention.
In a second aspect, the embodiment of the invention also discloses a semiconductor manufacturing system, which is used in the manufacturing of semiconductor devices and comprises the atomic layer deposition equipment.
Compared with the prior art, the beneficial effects of the semiconductor manufacturing system provided by the embodiment of the invention are the same as the beneficial effects of the atomic layer deposition equipment described in the embodiment, and the details are not repeated here.
In a third aspect, referring to fig. 3, an embodiment of the present invention further discloses an atomic layer deposition method, including:
s101, the thickness of the film layer deposited in different areas of the wafer detected by the thickness detector is obtained.
The thickness detector is arranged on the surface of the wafer deposition film layer and used for acquiring the thickness of the film layer deposited in different areas of the wafer. It is understood that in the embodiment of the present invention, the number of the thickness detectors may be plural. The plurality of thickness detectors are arranged at different areas of the surface of the wafer deposition film layer.
S102, controlling the nozzle assembly to provide process gases with different flow rates to different areas of the wafer according to the thicknesses of the films deposited in the different areas of the wafer.
Specifically, in the atomic layer deposition process, when the thickness detector detects that the thickness of a film layer in a certain area of the wafer is smaller than that in other areas, the controller controls the nozzle assembly to provide a larger flow of deposition gas to the area, so as to solve the problem that the thickness of the film layer in the area of the wafer is smaller. In contrast, when the thickness detector detects that the thickness of the film in a certain region of the wafer is greater than the thickness of the film in other regions, the controller controls the nozzle assembly to provide a smaller flow rate of the deposition gas to the region to eliminate the problem of the greater thickness of the film in the region of the wafer. So that the film layers in all regions of the wafer have the same thickness.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, the apparatus embodiments are substantially similar to the method embodiments and therefore are described in a relatively simple manner, and reference may be made to some of the description of the method embodiments for relevant points.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. An atomic layer deposition apparatus comprising a process chamber, a nozzle assembly, a thickness detector, and a processor in communication with the nozzle assembly and the film layer thickness detector;
the nozzle assembly is positioned in the processing chamber and is communicated with a deposition gas source, and the nozzle assembly is arranged opposite to the wafer in the processing chamber;
the thickness detector is positioned in the processing chamber and used for detecting the thicknesses of the films deposited in different areas of the wafer and sending the thicknesses of the films deposited in different areas of the wafer to the controller;
the controller is used for controlling the nozzle assembly to provide deposition gases with different flow rates to different areas of the wafer according to the thickness of the film layer deposited in the different areas of the wafer.
2. The atomic layer deposition apparatus according to claim 1, wherein the nozzle assembly comprises a nozzle body and a plurality of flow regulators in communication with a controller;
the plurality of flow regulators are disposed at different regions of the nozzle body, and each of the flow regulators is configured to regulate a flow of the deposition gas at the corresponding region of the nozzle body under control of the controller.
3. The atomic layer deposition apparatus according to claim 2, wherein the nozzle body has a gas inlet in communication with the deposition gas source, a spray channel, and a plurality of spray apertures, the gas inlet and the plurality of spray apertures being in communication through the spray channel;
the spraying holes are uniformly distributed on the nozzle body and are opposite to the wafer in the processing chamber;
the plurality of spray holes have the same or different size parameters.
4. The atomic layer deposition apparatus according to claim 3, wherein the nozzle body has at least one gas inlet;
the at least one air inlet is located at least one of a first end, a second end, and a central location of the nozzle body along a length of the nozzle body.
5. The atomic layer deposition apparatus according to claim 4, wherein when the nozzle body has an inlet opening at the first end of the nozzle body, the spray orifice size parameter increases in a direction from the first end of the nozzle body to the second end of the nozzle body.
6. The atomic layer deposition apparatus according to claim 4, wherein when the nozzle body has an inlet opening at the second end of the nozzle body, the spray orifice size parameter decreases in a direction from the first end of the nozzle body to the second end of the nozzle body.
7. The atomic layer deposition apparatus according to claim 4, wherein when the nozzle body has one gas inlet and the gas inlet is located in a central region of the nozzle body, the size parameter of the spray orifice is gradually increased in a direction from the central region of the nozzle body to the first end of the nozzle body or the second end of the nozzle body.
8. The atomic layer deposition apparatus according to any of the claims 3 to 7, wherein the spray aperture comprises a circular spray aperture or a polygonal spray aperture;
and/or the size parameter of the spraying hole is the area of the spraying hole.
9. A semiconductor manufacturing system comprising the atomic layer deposition apparatus according to any one of claims 1 to 8.
10. An atomic layer deposition method, applied to any one of the atomic layer deposition apparatuses 1 to 8, the atomic layer deposition method comprising:
acquiring the thicknesses of the film layers deposited in different areas of the wafer, which are detected by the thickness detector;
and controlling the nozzle assembly to provide process gases with different flow rates to different areas of the wafer according to the thickness of the film layer deposited in different areas of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111029417.7A CN115747764A (en) | 2021-09-02 | 2021-09-02 | Atomic layer deposition equipment and method and semiconductor manufacturing system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111029417.7A CN115747764A (en) | 2021-09-02 | 2021-09-02 | Atomic layer deposition equipment and method and semiconductor manufacturing system |
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| Publication Number | Publication Date |
|---|---|
| CN115747764A true CN115747764A (en) | 2023-03-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111029417.7A Pending CN115747764A (en) | 2021-09-02 | 2021-09-02 | Atomic layer deposition equipment and method and semiconductor manufacturing system |
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| CN (1) | CN115747764A (en) |
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- 2021-09-02 CN CN202111029417.7A patent/CN115747764A/en active Pending
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